TW275706B - - Google Patents

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Publication number
TW275706B
TW275706B TW084104698A TW84104698A TW275706B TW 275706 B TW275706 B TW 275706B TW 084104698 A TW084104698 A TW 084104698A TW 84104698 A TW84104698 A TW 84104698A TW 275706 B TW275706 B TW 275706B
Authority
TW
Taiwan
Application number
TW084104698A
Other languages
Chinese (zh)
Original Assignee
Form Factor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22544550&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW275706(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Form Factor Inc filed Critical Form Factor Inc
Application granted granted Critical
Publication of TW275706B publication Critical patent/TW275706B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161—Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
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    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
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    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/306—Lead-in-hole components, e.g. affixing or retention before soldering, spacing means
    • H05K3/308—Adaptations of leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3421—Leaded components
    • H05K3/3426—Leaded components characterised by the leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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    • G01R1/06755—Material aspects
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    • G—PHYSICS
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/10886—Other details
    • H05K2201/10946—Leads attached onto leadless component after manufacturing the component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3421—Leaded components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
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    • Y10T29/49155—Manufacturing circuit on or in base
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    • Y10T29/49204—Contact or terminal manufacturing
    • Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
    • Y10T29/49222—Contact or terminal manufacturing by assembling plural parts forming array of contacts or terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y10T29/49224—Contact or terminal manufacturing with coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49609—Spring making

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
TW084104698A 1993-11-16 1995-07-10 TW275706B (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/152,812 US5476211A (en) 1993-11-16 1993-11-16 Method of manufacturing electrical contacts, using a sacrificial member

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TW275706B true TW275706B (en:Method) 1996-05-11

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Families Citing this family (415)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5829128A (en) * 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US6043563A (en) * 1997-05-06 2000-03-28 Formfactor, Inc. Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5371654A (en) * 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
US6295729B1 (en) * 1992-10-19 2001-10-02 International Business Machines Corporation Angled flying lead wire bonding process
US20050062492A1 (en) * 2001-08-03 2005-03-24 Beaman Brian Samuel High density integrated circuit apparatus, test probe and methods of use thereof
US7368924B2 (en) * 1993-04-30 2008-05-06 International Business Machines Corporation Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof
US20030048108A1 (en) * 1993-04-30 2003-03-13 Beaman Brian Samuel Structural design and processes to control probe position accuracy in a wafer test probe assembly
US5772451A (en) * 1993-11-16 1998-06-30 Form Factor, Inc. Sockets for electronic components and methods of connecting to electronic components
US7579269B2 (en) * 1993-11-16 2009-08-25 Formfactor, Inc. Microelectronic spring contact elements
US5884398A (en) * 1993-11-16 1999-03-23 Form Factor, Inc. Mounting spring elements on semiconductor devices
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6184053B1 (en) * 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US5912046A (en) * 1993-11-16 1999-06-15 Form Factor, Inc. Method and apparatus for applying a layer of flowable coating material to a surface of an electronic component
US5983493A (en) * 1993-11-16 1999-11-16 Formfactor, Inc. Method of temporarily, then permanently, connecting to a semiconductor device
US6482013B2 (en) * 1993-11-16 2002-11-19 Formfactor, Inc. Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US6442831B1 (en) * 1993-11-16 2002-09-03 Formfactor, Inc. Method for shaping spring elements
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7064566B2 (en) * 1993-11-16 2006-06-20 Formfactor, Inc. Probe card assembly and kit
US6624648B2 (en) 1993-11-16 2003-09-23 Formfactor, Inc. Probe card assembly
US6836962B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
US5806181A (en) * 1993-11-16 1998-09-15 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US20070228110A1 (en) * 1993-11-16 2007-10-04 Formfactor, Inc. Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out
US5601740A (en) * 1993-11-16 1997-02-11 Formfactor, Inc. Method and apparatus for wirebonding, for severing bond wires, and for forming balls on the ends of bond wires
US7084656B1 (en) * 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US6727580B1 (en) * 1993-11-16 2004-04-27 Formfactor, Inc. Microelectronic spring contact elements
US6525555B1 (en) 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6741085B1 (en) * 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US5455390A (en) * 1994-02-01 1995-10-03 Tessera, Inc. Microelectronics unit mounting with multiple lead bonding
US5983492A (en) * 1996-11-27 1999-11-16 Tessera, Inc. Low profile socket for microelectronic components and method for making the same
EP0792519B1 (en) * 1994-11-15 2003-03-26 Formfactor, Inc. Interconnection elements for microelectronic components
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6016852A (en) * 1994-12-01 2000-01-25 Intel Corporation Leaded grid array IC package having coplanar bent leads for surface mount technology
US5842628A (en) 1995-04-10 1998-12-01 Fujitsu Limited Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method
US6232789B1 (en) 1997-05-28 2001-05-15 Cascade Microtech, Inc. Probe holder for low current measurements
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
EP0828582A4 (en) * 1995-05-26 1999-02-03 Formfactor Inc RIBBON TYPE CENTRAL INTERCONNECTION ELEMENTS
KR100252457B1 (ko) * 1995-05-26 2000-04-15 이고르 와이. 칸드로스 캔틸레버 요소및 희생기층을 사용하는 상호 접속요소의 제작방법
AU6028796A (en) * 1995-05-26 1996-12-11 Formfactor, Inc. Method and apparatus for shaping spring elements
US20100065963A1 (en) * 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
EP2063466A2 (en) 1995-05-26 2009-05-27 FormFactor, Inc. Interconnection element and method of fabrication thereof
US6483328B1 (en) * 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US5729150A (en) 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
DE19606116A1 (de) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Elektrische Kontaktelemente
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
JP3079987B2 (ja) * 1996-02-28 2000-08-21 日本電気株式会社 電界放出電子源およびその製造方法
EP1321978B1 (en) * 1996-05-17 2010-02-17 FormFactor, Inc. Contact structure
JP3328135B2 (ja) * 1996-05-28 2002-09-24 田中電子工業株式会社 バンプ形成用金合金線及びバンプ形成方法
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6020220A (en) * 1996-07-09 2000-02-01 Tessera, Inc. Compliant semiconductor chip assemblies and methods of making same
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
EP0925509B1 (en) * 1996-09-13 2005-09-07 International Business Machines Corporation Probe structure having a plurality of discrete insulated probe tips
EP1158579B1 (en) * 1996-10-01 2008-11-19 Panasonic Corporation Wire bonding capillary for forming bump electrodes
TW406454B (en) 1996-10-10 2000-09-21 Berg Tech Inc High density connector and method of manufacture
US6104201A (en) * 1996-11-08 2000-08-15 International Business Machines Corporation Method and apparatus for passive characterization of semiconductor substrates subjected to high energy (MEV) ion implementation using high-injection surface photovoltage
US6417029B1 (en) 1996-12-12 2002-07-09 Tessera, Inc. Compliant package with conductive elastomeric posts
US6635514B1 (en) 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
US5989939A (en) * 1996-12-13 1999-11-23 Tessera, Inc. Process of manufacturing compliant wirebond packages
KR100214545B1 (ko) * 1996-12-28 1999-08-02 구본준 칩 사이즈 반도체 패키지의 제조 방법
US6690185B1 (en) 1997-01-15 2004-02-10 Formfactor, Inc. Large contactor with multiple, aligned contactor units
US7063541B2 (en) 1997-03-17 2006-06-20 Formfactor, Inc. Composite microelectronic spring structure and method for making same
US6449834B1 (en) * 1997-05-02 2002-09-17 Scilogy Corp. Electrical conductor coils and methods of making same
US7714235B1 (en) 1997-05-06 2010-05-11 Formfactor, Inc. Lithographically defined microelectronic contact structures
KR100577131B1 (ko) * 1997-05-15 2006-05-10 폼팩터, 인크. 초소형 전자 요소 접촉 구조물과 그 제조 및 사용 방법
US6525551B1 (en) * 1997-05-22 2003-02-25 International Business Machines Corporation Probe structures for testing electrical interconnections to integrated circuit electronic devices
US6034533A (en) 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6082610A (en) 1997-06-23 2000-07-04 Ford Motor Company Method of forming interconnections on electronic modules
US6010059A (en) * 1997-09-30 2000-01-04 Siemens Energy & Automation, Inc. Method for ultrasonic joining of electrical parts using a brazing alloy
JP3262531B2 (ja) 1997-10-02 2002-03-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 曲げられたフライング・リード・ワイヤ・ボンデイング・プロセス
JP3455092B2 (ja) * 1997-10-27 2003-10-06 株式会社新川 半導体装置及びワイヤボンディング方法
JP3123483B2 (ja) * 1997-10-28 2001-01-09 日本電気株式会社 プローブカード及びプローブカード形成方法
US6724203B1 (en) * 1997-10-30 2004-04-20 International Business Machines Corporation Full wafer test configuration using memory metals
KR100244504B1 (ko) * 1997-11-15 2000-02-01 김영환 칩 사이즈 반도체 패키지의 제조방법
US6357112B1 (en) * 1997-11-25 2002-03-19 Tessera, Inc. Method of making connection component
US6557253B1 (en) 1998-02-09 2003-05-06 Tessera, Inc. Method of making components with releasable leads
US6720501B1 (en) 1998-04-14 2004-04-13 Formfactor, Inc. PC board having clustered blind vias
DE19823623A1 (de) * 1998-05-27 1999-12-02 Bosch Gmbh Robert Verfahren und Kontaktstelle zur Herstellung einer elektrischen Verbindung
SG108210A1 (en) * 1998-06-19 2005-01-28 Advantest Corp Probe contactor formed by photolithography process
US6164523A (en) * 1998-07-01 2000-12-26 Semiconductor Components Industries, Llc Electronic component and method of manufacture
US6705876B2 (en) * 1998-07-13 2004-03-16 Formfactor, Inc. Electrical interconnect assemblies and methods
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6509590B1 (en) * 1998-07-20 2003-01-21 Micron Technology, Inc. Aluminum-beryllium alloys for air bridges
WO2000010016A1 (fr) 1998-08-12 2000-02-24 Tokyo Electron Limited Contacteur et procede de production de contacteur
US6169331B1 (en) 1998-08-28 2001-01-02 Micron Technology, Inc. Apparatus for electrically coupling bond pads of a microelectronic device
JP2000077477A (ja) 1998-09-02 2000-03-14 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法並びにこれに用いる金属基板
DE19841826B4 (de) * 1998-09-12 2008-06-19 Ceramtec Ag Innovative Ceramic Engineering Verfahren zum Prüfen keramischer Pfanneneinsätze von Hüftgelenk-Endoprothesen
US6586845B1 (en) 1998-10-28 2003-07-01 Shinko Electric Industries Co., Ltd. Semiconductor device module and a part thereof
JP3660814B2 (ja) * 1998-10-28 2005-06-15 新光電気工業株式会社 半導体モジュールの製造方法及び半導体装置モジュール用部品の製造方法
US6255126B1 (en) * 1998-12-02 2001-07-03 Formfactor, Inc. Lithographic contact elements
DE69924152T2 (de) * 1998-12-04 2006-04-27 Formfactor, Inc., Livermore Verfahren zum Montieren eines elektronischen Beuteils
US6887723B1 (en) * 1998-12-04 2005-05-03 Formfactor, Inc. Method for processing an integrated circuit including placing dice into a carrier and testing
US6456099B1 (en) 1998-12-31 2002-09-24 Formfactor, Inc. Special contact points for accessing internal circuitry of an integrated circuit
US6183267B1 (en) 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US6259155B1 (en) * 1999-04-12 2001-07-10 International Business Machines Corporation Polymer enhanced column grid array
US6812718B1 (en) 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7247035B2 (en) 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7137830B2 (en) * 2002-03-18 2006-11-21 Nanonexus, Inc. Miniaturized contact spring
US6799976B1 (en) 1999-07-28 2004-10-05 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US6710609B2 (en) * 2002-07-15 2004-03-23 Nanonexus, Inc. Mosaic decal probe
US20070245553A1 (en) * 1999-05-27 2007-10-25 Chong Fu C Fine pitch microfabricated spring contact structure & method
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US7215131B1 (en) 1999-06-07 2007-05-08 Formfactor, Inc. Segmented contactor
JP2001044362A (ja) * 1999-07-27 2001-02-16 Mitsubishi Electric Corp 半導体装置の実装構造および実装方法
US7189077B1 (en) 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US7435108B1 (en) 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US6713374B2 (en) 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US6468098B1 (en) * 1999-08-17 2002-10-22 Formfactor, Inc. Electrical contactor especially wafer level contactor using fluid pressure
US6853067B1 (en) 1999-10-12 2005-02-08 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US6392428B1 (en) 1999-11-16 2002-05-21 Eaglestone Partners I, Llc Wafer level interposer
US6511463B1 (en) * 1999-11-18 2003-01-28 Jds Uniphase Corporation Methods of fabricating microneedle arrays using sacrificial molds
US6380555B1 (en) 1999-12-24 2002-04-30 Micron Technology, Inc. Bumped semiconductor component having test pads, and method and system for testing bumped semiconductor components
US6827584B2 (en) * 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics
US6464513B1 (en) 2000-01-05 2002-10-15 Micron Technology, Inc. Adapter for non-permanently connecting integrated circuit devices to multi-chip modules and method of using same
US6848942B1 (en) 2000-01-12 2005-02-01 Molex Incorporated Connectors having supportive barrier components
US7211512B1 (en) 2000-01-18 2007-05-01 Micron Technology, Inc. Selective electroless-plated copper metallization
US6420262B1 (en) 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US7262130B1 (en) 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6657455B2 (en) * 2000-01-18 2003-12-02 Formfactor, Inc. Predictive, adaptive power supply for an integrated circuit under test
US6250933B1 (en) 2000-01-20 2001-06-26 Advantest Corp. Contact structure and production method thereof
US6838890B2 (en) 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
JP2001332658A (ja) 2000-03-14 2001-11-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
US7262611B2 (en) 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor
JP4088015B2 (ja) * 2000-03-24 2008-05-21 株式会社新川 湾曲状ワイヤの形成方法
US6407566B1 (en) 2000-04-06 2002-06-18 Micron Technology, Inc. Test module for multi-chip module simulation testing of integrated circuit packages
DE10017746B4 (de) * 2000-04-10 2005-10-13 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauteils mit mikroskopisch kleinen Kontaktflächen
US6640432B1 (en) * 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
US20050068054A1 (en) * 2000-05-23 2005-03-31 Sammy Mok Standardized layout patterns and routing structures for integrated circuit wafer probe card assemblies
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7579848B2 (en) 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US6674167B1 (en) 2000-05-31 2004-01-06 Micron Technology, Inc. Multilevel copper interconnect with double passivation
US6423629B1 (en) 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
EP1292834B1 (en) 2000-06-20 2005-11-30 Nanonexus, Inc. Systems for testing integrated circuits
US6822469B1 (en) 2000-07-31 2004-11-23 Eaglestone Partners I, Llc Method for testing multiple semiconductor wafers
US6537831B1 (en) * 2000-07-31 2003-03-25 Eaglestone Partners I, Llc Method for selecting components for a matched set using a multi wafer interposer
US6812048B1 (en) 2000-07-31 2004-11-02 Eaglestone Partners I, Llc Method for manufacturing a wafer-interposer assembly
US6462575B1 (en) * 2000-08-28 2002-10-08 Micron Technology, Inc. Method and system for wafer level testing and burning-in semiconductor components
DE10045534B4 (de) * 2000-09-13 2005-03-17 Infineon Technologies Ag Elektronisches Bauteil mit Außenanschlußelementen ausgebildet als Kapillarelement, Verfahren zur Herstellung und Anordnung
US6589819B2 (en) * 2000-09-29 2003-07-08 Tessera, Inc. Microelectronic packages having an array of resilient leads and methods therefor
US6815712B1 (en) 2000-10-02 2004-11-09 Eaglestone Partners I, Llc Method for selecting components for a matched set from a wafer-interposer assembly
US6564449B1 (en) * 2000-11-07 2003-05-20 Advanced Semiconductor Engineering, Inc. Method of making wire connection in semiconductor device
US6686657B1 (en) 2000-11-07 2004-02-03 Eaglestone Partners I, Llc Interposer for improved handling of semiconductor wafers and method of use of same
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
DE10143173A1 (de) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafersonde
US6529022B2 (en) 2000-12-15 2003-03-04 Eaglestone Pareners I, Llc Wafer testing interposer for a conventional package
US6524885B2 (en) * 2000-12-15 2003-02-25 Eaglestone Partners I, Llc Method, apparatus and system for building an interposer onto a semiconductor wafer using laser techniques
US20020076854A1 (en) * 2000-12-15 2002-06-20 Pierce John L. System, method and apparatus for constructing a semiconductor wafer-interposer using B-Stage laminates
US20020078401A1 (en) * 2000-12-15 2002-06-20 Fry Michael Andrew Test coverage analysis system
JP3486872B2 (ja) * 2001-01-26 2004-01-13 Ｎｅｃセミコンダクターズ九州株式会社 半導体装置及びその製造方法
US6673653B2 (en) * 2001-02-23 2004-01-06 Eaglestone Partners I, Llc Wafer-interposer using a ceramic substrate
US7396236B2 (en) * 2001-03-16 2008-07-08 Formfactor, Inc. Wafer level interposer
US7010856B2 (en) * 2001-03-16 2006-03-14 Nihon Kohden Corporation Lead wire attachment method, electrode, and spot welder
US6694609B2 (en) 2001-03-22 2004-02-24 Molex Incorporated Method of making stitched LGA connector
US6722896B2 (en) 2001-03-22 2004-04-20 Molex Incorporated Stitched LGA connector
JP2002353371A (ja) 2001-05-25 2002-12-06 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US6545226B2 (en) * 2001-05-31 2003-04-08 International Business Machines Corporation Printed wiring board interposer sub-assembly
US6585527B2 (en) * 2001-05-31 2003-07-01 Samtec, Inc. Compliant connector for land grid array
KR100422346B1 (ko) * 2001-06-12 2004-03-12 주식회사 하이닉스반도체 칩크기 패키지 구조 및 그 제조방법
US6729019B2 (en) 2001-07-11 2004-05-04 Formfactor, Inc. Method of manufacturing a probe card
US7182672B2 (en) * 2001-08-02 2007-02-27 Sv Probe Pte. Ltd. Method of probe tip shaping and cleaning
AU2002327490A1 (en) 2001-08-21 2003-06-30 Cascade Microtech, Inc. Membrane probing system
US7045889B2 (en) 2001-08-21 2006-05-16 Micron Technology, Inc. Device for establishing non-permanent electrical connection between an integrated circuit device lead element and a substrate
EP1419285A4 (en) * 2001-08-24 2009-08-19 Nanonexus Inc METHOD AND DEVICE FOR GENERATING UNIFORM ISOTROPIC VOLTAGES IN A SPOTTED FILM
US20030038356A1 (en) * 2001-08-24 2003-02-27 Derderian James M Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods
US7049693B2 (en) 2001-08-29 2006-05-23 Micron Technology, Inc. Electrical contact array for substrate assemblies
US6817052B2 (en) * 2001-11-09 2004-11-16 Formfactor, Inc. Apparatuses and methods for cleaning test probes
US6798073B2 (en) 2001-12-13 2004-09-28 Megic Corporation Chip structure and process for forming the same
US7168160B2 (en) * 2001-12-21 2007-01-30 Formfactor, Inc. Method for mounting and heating a plurality of microelectronic components
US20030116346A1 (en) * 2001-12-21 2003-06-26 Forster James Allam Low cost area array probe for circuits having solder-ball contacts are manufactured using a wire bonding machine
US7064953B2 (en) * 2001-12-27 2006-06-20 Formfactor, Inc. Electronic package with direct cooling of active electronic components
US6891385B2 (en) * 2001-12-27 2005-05-10 Formfactor, Inc. Probe card cooling assembly with direct cooling of active electronic components
EP1461628B1 (en) 2001-12-27 2008-04-09 FormFactor, Inc. Cooling assembly with direct cooling of active electronic components
JP2003198117A (ja) * 2001-12-28 2003-07-11 Matsushita Electric Ind Co Ltd はんだ付け方法および接合構造体
US7042084B2 (en) * 2002-01-02 2006-05-09 Intel Corporation Semiconductor package with integrated heat spreader attached to a thermally conductive substrate core
US6977345B2 (en) * 2002-01-08 2005-12-20 International Business Machines Corporation Vents with signal image for signal return path
US6860769B2 (en) * 2002-01-12 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Cathode contact pin for an electroplating process
US6840374B2 (en) 2002-01-18 2005-01-11 Igor Y. Khandros Apparatus and method for cleaning test probes
JP2003249607A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
DE10392441T5 (de) * 2002-03-18 2005-07-07 Nanonexus, Inc., Fremont Eine miniaturisierte Kontaktfeder
US7010854B2 (en) * 2002-04-10 2006-03-14 Formfactor, Inc. Re-assembly process for MEMS structures
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US7265565B2 (en) 2003-02-04 2007-09-04 Microfabrica Inc. Cantilever microprobes for contacting electronic components and methods for making such probes
US20060006888A1 (en) * 2003-02-04 2006-01-12 Microfabrica Inc. Electrochemically fabricated microprobes
US20060053625A1 (en) * 2002-05-07 2006-03-16 Microfabrica Inc. Microprobe tips and methods for making
US20060051948A1 (en) * 2003-02-04 2006-03-09 Microfabrica Inc. Microprobe tips and methods for making
US7273812B2 (en) * 2002-05-07 2007-09-25 Microfabrica Inc. Microprobe tips and methods for making
US7363705B2 (en) * 2003-02-04 2008-04-29 Microfabrica, Inc. Method of making a contact
US20050104609A1 (en) * 2003-02-04 2005-05-19 Microfabrica Inc. Microprobe tips and methods for making
US7412767B2 (en) * 2003-02-04 2008-08-19 Microfabrica, Inc. Microprobe tips and methods for making
US20050184748A1 (en) * 2003-02-04 2005-08-25 Microfabrica Inc. Pin-type probes for contacting electronic circuits and methods for making such probes
US20060238209A1 (en) * 2002-05-07 2006-10-26 Microfabrica Inc. Vertical microprobes for contacting electronic components and method for making such probes
US7138583B2 (en) * 2002-05-08 2006-11-21 Sandisk Corporation Method and apparatus for maintaining a separation between contacts
EP1509776A4 (en) 2002-05-23 2010-08-18 Cascade Microtech Inc PROBE TO TEST ANY TESTING EQUIPMENT
US7011530B2 (en) * 2002-05-24 2006-03-14 Sitaraman Suresh K Multi-axis compliance spring
US6787920B2 (en) * 2002-06-25 2004-09-07 Intel Corporation Electronic circuit board manufacturing process and associated apparatus
US7032311B2 (en) * 2002-06-25 2006-04-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
WO2004029858A1 (en) * 2002-09-25 2004-04-08 Koninklijke Philips Electronics N.V. Connector for chip-card
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
DE10255626A1 (de) * 2002-11-28 2004-06-17 Infineon Technologies Ag Verfahren und Vorrichtung zum Anordnen von Kontaktierungselementen von Bauelementen eines integrierten Schaltkreises, Computerlesbares Speichermedium und Programm-Element
US7084650B2 (en) * 2002-12-16 2006-08-01 Formfactor, Inc. Apparatus and method for limiting over travel in a probe card assembly
US7567089B2 (en) * 2003-02-04 2009-07-28 Microfabrica Inc. Two-part microprobes for contacting electronic components and methods for making such probes
US10416192B2 (en) 2003-02-04 2019-09-17 Microfabrica Inc. Cantilever microprobes for contacting electronic components
CA2418683C (en) * 2003-02-11 2007-01-02 Ibm Canada Limited - Ibm Canada Limitee Area-array with low inductance connecting device
US7271497B2 (en) * 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
US6965245B2 (en) 2003-05-01 2005-11-15 K&S Interconnect, Inc. Prefabricated and attached interconnect structure
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US6994565B2 (en) * 2003-07-14 2006-02-07 Fci Americas Technology, Inc. Electrical contact assembly with insulative carrier, stapled contact attachment and fusible element
WO2006017078A2 (en) 2004-07-07 2006-02-16 Cascade Microtech, Inc. Probe head having a membrane suspended probe
US6859054B1 (en) * 2003-08-13 2005-02-22 Advantest Corp. Probe contact system using flexible printed circuit board
US7261230B2 (en) * 2003-08-29 2007-08-28 Freescale Semiconductor, Inc. Wirebonding insulated wire and capillary therefor
US7030632B2 (en) * 2003-10-14 2006-04-18 Micron Technology, Inc. Compliant contract structures, contactor cards and test system including same
JP4427298B2 (ja) * 2003-10-28 2010-03-03 富士通株式会社 多段バンプの形成方法
JP4008408B2 (ja) * 2003-11-07 2007-11-14 日本電子材料株式会社 プローブカード
US20050108875A1 (en) * 2003-11-26 2005-05-26 Mathieu Gaetan L. Methods for making vertical electric feed through structures usable to form removable substrate tiles in a wafer test system
US7024763B2 (en) * 2003-11-26 2006-04-11 Formfactor, Inc. Methods for making plated through holes usable as interconnection wire or probe attachments
US7160121B2 (en) * 2003-12-15 2007-01-09 Palo Alto Research Center Incorporated Stressed metal contact with enhanced lateral compliance
US7410590B2 (en) * 2003-12-19 2008-08-12 Palo Alto Research Center Incorporated Transferable micro spring structure
US7427868B2 (en) 2003-12-24 2008-09-23 Cascade Microtech, Inc. Active wafer probe
US20080108221A1 (en) * 2003-12-31 2008-05-08 Microfabrica Inc. Microprobe Tips and Methods for Making
US7098544B2 (en) * 2004-01-06 2006-08-29 International Business Machines Corporation Edge seal for integrated circuit chips
US7094117B2 (en) * 2004-02-27 2006-08-22 Micron Technology, Inc. Electrical contacts with dielectric cores
US7282932B2 (en) * 2004-03-02 2007-10-16 Micron Technology, Inc. Compliant contact pin assembly, card system and methods thereof
US7251884B2 (en) * 2004-04-26 2007-08-07 Formfactor, Inc. Method to build robust mechanical structures on substrate surfaces
US9476911B2 (en) 2004-05-21 2016-10-25 Microprobe, Inc. Probes with high current carrying capability and laser machining methods
US9097740B2 (en) 2004-05-21 2015-08-04 Formfactor, Inc. Layered probes with core
US8988091B2 (en) 2004-05-21 2015-03-24 Microprobe, Inc. Multiple contact probes
US7759949B2 (en) 2004-05-21 2010-07-20 Microprobe, Inc. Probes with self-cleaning blunt skates for contacting conductive pads
US7659739B2 (en) 2006-09-14 2010-02-09 Micro Porbe, Inc. Knee probe having reduced thickness section for control of scrub motion
USRE43503E1 (en) 2006-06-29 2012-07-10 Microprobe, Inc. Probe skates for electrical testing of convex pad topologies
US20050277281A1 (en) * 2004-06-10 2005-12-15 Dubin Valery M Compliant interconnect and method of formation
US7230437B2 (en) * 2004-06-15 2007-06-12 Formfactor, Inc. Mechanically reconfigurable vertical tester interface for IC probing
US7082684B2 (en) * 2004-08-04 2006-08-01 Palo Alto Research Center Incorporated Intermetallic spring structure
CN1934691A (zh) * 2004-08-05 2007-03-21 精工爱普生株式会社 结合结构、引线结合方法、致动装置和液体喷射头
US20060030179A1 (en) * 2004-08-05 2006-02-09 Palo Alto Research Center, Incorporated Transmission-line spring structure
US7750487B2 (en) * 2004-08-11 2010-07-06 Intel Corporation Metal-metal bonding of compliant interconnect
US7459795B2 (en) * 2004-08-19 2008-12-02 Formfactor, Inc. Method to build a wirebond probe card in a many at a time fashion
JP2008512680A (ja) 2004-09-13 2008-04-24 カスケード マイクロテック インコーポレイテッド 両面プロービング構造体
US20060055032A1 (en) * 2004-09-14 2006-03-16 Kuo-Chin Chang Packaging with metal studs formed on solder pads
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
US7230440B2 (en) * 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
US7621044B2 (en) 2004-10-22 2009-11-24 Formfactor, Inc. Method of manufacturing a resilient contact
US7292294B2 (en) * 2004-11-03 2007-11-06 Chunghwa Picture Tubes, Ltd. Manufacturing method of color filter on TFT array and manufacturing method of LCD panel
WO2006052616A1 (en) 2004-11-03 2006-05-18 Tessera, Inc. Stacked packaging improvements
US7523852B2 (en) * 2004-12-05 2009-04-28 International Business Machines Corporation Solder interconnect structure and method using injection molded solder
WO2006137896A2 (en) * 2004-12-16 2006-12-28 International Business Machines Corporation Metalized elastomeric probe structure
US7771208B2 (en) * 2004-12-16 2010-08-10 International Business Machines Corporation Metalized elastomeric electrical contacts
DE102004062885B4 (de) * 2004-12-27 2007-10-18 Infineon Technologies Ag Anordnung mit einer elektronischen Leiterplatte und mindestens einem Halbleiterbaustein und Verfahren
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
JP4797391B2 (ja) 2005-02-10 2011-10-19 東京エレクトロン株式会社 インターポーザの製造方法
US7160798B2 (en) * 2005-02-24 2007-01-09 Freescale Semiconductor, Inc. Method of making reinforced semiconductor package
US7371676B2 (en) 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7692521B1 (en) 2005-05-12 2010-04-06 Microassembly Technologies, Inc. High force MEMS device
US7393770B2 (en) 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7449899B2 (en) 2005-06-08 2008-11-11 Cascade Microtech, Inc. Probe for high frequency signals
US7619419B2 (en) 2005-06-13 2009-11-17 Cascade Microtech, Inc. Wideband active-passive differential signal probe
US7637415B2 (en) * 2005-10-31 2009-12-29 General Electric Company Methods and apparatus for assembling a printed circuit board
KR100722096B1 (ko) * 2005-11-23 2007-05-25 삼성에스디아이 주식회사 휴대용 표시장치
US7307348B2 (en) 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US7649367B2 (en) 2005-12-07 2010-01-19 Microprobe, Inc. Low profile probe having improved mechanical scrub and reduced contact inductance
JP4848752B2 (ja) * 2005-12-09 2011-12-28 イビデン株式会社 部品実装用ピンを有するプリント配線板及びこれを使用した電子機器
JP4654897B2 (ja) * 2005-12-09 2011-03-23 イビデン株式会社 部品実装用ピンを有するプリント配線板の製造方法
JP2007165383A (ja) * 2005-12-09 2007-06-28 Ibiden Co Ltd 部品実装用ピンを形成したプリント基板
US8058101B2 (en) * 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US7494924B2 (en) * 2006-03-06 2009-02-24 Freescale Semiconductor, Inc. Method for forming reinforced interconnects on a substrate
US8344524B2 (en) * 2006-03-07 2013-01-01 Megica Corporation Wire bonding method for preventing polymer cracking
US7312617B2 (en) 2006-03-20 2007-12-25 Microprobe, Inc. Space transformers employing wire bonds for interconnections with fine pitch contacts
US20070222087A1 (en) * 2006-03-27 2007-09-27 Sangdo Lee Semiconductor device with solderable loop contacts
US20070235872A1 (en) * 2006-03-28 2007-10-11 Ping-Chang Wu Semiconductor package structure
US7659612B2 (en) 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US7444253B2 (en) * 2006-05-09 2008-10-28 Formfactor, Inc. Air bridge structures and methods of making and using air bridge structures
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
US7952375B2 (en) * 2006-06-06 2011-05-31 Formfactor, Inc. AC coupled parameteric test probe
US7609077B2 (en) 2006-06-09 2009-10-27 Cascade Microtech, Inc. Differential signal probe with integral balun
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7443186B2 (en) 2006-06-12 2008-10-28 Cascade Microtech, Inc. On-wafer test structures for differential signals
US7967062B2 (en) * 2006-06-16 2011-06-28 International Business Machines Corporation Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereof
US8907689B2 (en) 2006-10-11 2014-12-09 Microprobe, Inc. Probe retention arrangement
JP2008117888A (ja) * 2006-11-02 2008-05-22 Rohm Co Ltd 電子部品、およびワイヤボンディング方法
US7642793B2 (en) * 2006-11-22 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-fine pitch probe card structure
EP1930216A1 (en) * 2006-12-07 2008-06-11 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Wire beam
US7696766B2 (en) 2007-01-31 2010-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-fine pitch probe card structure
KR100797682B1 (ko) * 2007-02-07 2008-01-23 삼성전기주식회사 인쇄회로기판의 제조방법
US7514948B2 (en) 2007-04-10 2009-04-07 Microprobe, Inc. Vertical probe array arranged to provide space transformation
DE102007020067B4 (de) * 2007-04-27 2013-07-18 Osram Gmbh Verfahren zur Herstellung einer Molybdänfolie für den Lampenbau und Molybdänfolie sowie Lampe mit Molybdänfolie
US8832936B2 (en) * 2007-04-30 2014-09-16 International Business Machines Corporation Method of forming metallized elastomeric electrical contacts
US7733102B2 (en) * 2007-07-10 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-fine area array pitch probe card
US7572679B2 (en) * 2007-07-26 2009-08-11 Texas Instruments Incorporated Heat extraction from packaged semiconductor chips, scalable with chip area
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7888955B2 (en) * 2007-09-25 2011-02-15 Formfactor, Inc. Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) 2007-09-27 2011-07-12 Formfactor, Inc. Method and apparatus for testing devices using serially controlled intelligent switches
TWI360182B (en) * 2007-10-05 2012-03-11 Ind Tech Res Inst Method for making a conductive film
US8723546B2 (en) 2007-10-19 2014-05-13 Microprobe, Inc. Vertical guided layered probe
US7964956B1 (en) * 2007-12-10 2011-06-21 Oracle America, Inc. Circuit packaging and connectivity
US20090164931A1 (en) * 2007-12-19 2009-06-25 Formfactor, Inc. Method and Apparatus for Managing Test Result Data Generated by a Semiconductor Test System
US20090224793A1 (en) * 2008-03-07 2009-09-10 Formfactor, Inc. Method And Apparatus For Designing A Custom Test System
US8122309B2 (en) * 2008-03-11 2012-02-21 Formfactor, Inc. Method and apparatus for processing failures during semiconductor device testing
TWI377624B (en) 2008-05-13 2012-11-21 Ind Tech Res Inst Conducting film structure, fabrication method thereof, and conducting film type probe device for ic
US8230593B2 (en) 2008-05-29 2012-07-31 Microprobe, Inc. Probe bonding method having improved control of bonding material
KR20100000328A (ko) * 2008-06-24 2010-01-06 삼성전자주식회사 조인트 신뢰성이 향상된 반도체 패키지 및 그 제조방법
US8095841B2 (en) * 2008-08-19 2012-01-10 Formfactor, Inc. Method and apparatus for testing semiconductor devices with autonomous expected value generation
US7944225B2 (en) 2008-09-26 2011-05-17 Formfactor, Inc. Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test
US8148646B2 (en) * 2008-09-29 2012-04-03 Formfactor, Inc. Process of positioning groups of contact structures
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
TWI399812B (zh) * 2008-12-29 2013-06-21 Ind Tech Res Inst 導電膜結構及其製法與導電膜式積體電路針測裝置
CN102356521B (zh) 2009-03-18 2014-07-09 怡得乐工业有限公司 具有焊料的平面触头
TW201039383A (en) * 2009-04-17 2010-11-01 Arima Optoelectronics Corp Semiconductor chip electrode structure and manufacturing method thereof
US8531042B2 (en) * 2009-06-30 2013-09-10 Oracle America, Inc. Technique for fabricating microsprings on non-planar surfaces
JP5597385B2 (ja) * 2009-11-19 2014-10-01 株式会社日本マイクロニクス 電気的試験用プローブ、それを用いた電気的接続装置、及びプローブの製造方法
US8407888B2 (en) 2010-05-07 2013-04-02 Oracle International Corporation Method of assembling a circuit board assembly
US20130142566A1 (en) * 2010-06-08 2013-06-06 Min-Feng Yu Electrochemical methods for wire bonding
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
JP5713598B2 (ja) 2010-07-20 2015-05-07 新光電気工業株式会社 ソケット及びその製造方法
US8191246B1 (en) * 2010-11-11 2012-06-05 Qi Luo Method of manufacturing a plurality of miniaturized spring contacts
KR101075241B1 (ko) 2010-11-15 2011-11-01 테세라, 인코포레이티드 유전체 부재에 단자를 구비하는 마이크로전자 패키지
US8133061B1 (en) * 2010-11-29 2012-03-13 International Business Machines Corporation Removable and replaceable dual-sided connector pin interposer
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
EP2671192A4 (en) * 2011-01-31 2014-10-22 American Bank Note Co SMART CARD WITH DOUBLE INTERFACE
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US9117811B2 (en) * 2011-06-13 2015-08-25 Tessera, Inc. Flip chip assembly and process with sintering material on metal bumps
JP2013033656A (ja) * 2011-08-02 2013-02-14 Yazaki Corp 端子
US8404520B1 (en) 2011-10-17 2013-03-26 Invensas Corporation Package-on-package assembly with wire bond vias
US9105552B2 (en) 2011-10-31 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8917106B2 (en) 2011-11-09 2014-12-23 Advantest America, Inc. Fine pitch microelectronic contact array and method of making same
EP2785446B1 (en) 2011-11-30 2023-04-19 Corning Incorporated Methods of forming complex structures in refractory bodies
US8823180B2 (en) 2011-12-28 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9171790B2 (en) * 2012-05-30 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
JP6108164B2 (ja) * 2012-11-07 2017-04-05 日本電産株式会社 半田接合構造および半田接合方法
US8975738B2 (en) 2012-11-12 2015-03-10 Invensas Corporation Structure for microelectronic packaging with terminals on dielectric mass
JP2014103183A (ja) * 2012-11-19 2014-06-05 Mitsubishi Electric Corp 電子回路、その製造方法、および電子部品
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US8883563B1 (en) 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9087815B2 (en) 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
JP2016028417A (ja) 2014-07-11 2016-02-25 ローム株式会社 電子装置
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
JP6332043B2 (ja) * 2015-01-09 2018-05-30 株式会社オートネットワーク技術研究所 コネクタ用端子対
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US10685943B2 (en) * 2015-05-14 2020-06-16 Mediatek Inc. Semiconductor chip package with resilient conductive paste post and fabrication method thereof
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US10998657B2 (en) 2016-03-18 2021-05-04 Apple Inc. Precious-metal-alloy contacts
DE202017001425U1 (de) 2016-03-18 2017-07-06 Apple Inc. Kontakte aus Edelmetallegierungen
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
DE102016115221A1 (de) * 2016-08-17 2018-02-22 Karlsruher Institut für Technologie Verfahren zum Verbinden von mindestens zwei Substraten zur Bildung eines Moduls
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
US9947634B1 (en) * 2017-06-13 2018-04-17 Northrop Grumman Systems Corporation Robust mezzanine BGA connector
US20190103693A1 (en) * 2017-09-29 2019-04-04 Apple Inc. Electrical contacts having sacrificial layer for corrosion protection
US10734579B2 (en) 2018-01-03 2020-08-04 International Business Machines Corporation Protuberant contacts for resistive switching devices
TWI655891B (zh) * 2018-03-08 2019-04-01 綠點高新科技股份有限公司 電子模組及其製造方法及電子裝置的殼體及其製造方法
US11973301B2 (en) 2018-09-26 2024-04-30 Microfabrica Inc. Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making
US11262383B1 (en) 2018-09-26 2022-03-01 Microfabrica Inc. Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making
US11811182B2 (en) * 2018-10-11 2023-11-07 Intel Corporation Solderless BGA interconnect
US12078657B2 (en) 2019-12-31 2024-09-03 Microfabrica Inc. Compliant pin probes with extension springs, methods for making, and methods for using
US12181493B2 (en) 2018-10-26 2024-12-31 Microfabrica Inc. Compliant probes including dual independently operable probe contact elements including at least one flat extension spring, methods for making, and methods for using
KR101944693B1 (ko) * 2018-12-04 2019-02-01 황동원 반도체 소자 테스트용 bga 소켓장치
US12000865B2 (en) 2019-02-14 2024-06-04 Microfabrica Inc. Multi-beam vertical probes with independent arms formed of a high conductivity metal for enhancing current carrying capacity and methods for making such probes
US12048092B2 (en) 2019-05-06 2024-07-23 3M Innovative Properties Company Patterned conductive article
KR102708517B1 (ko) * 2019-10-15 2024-09-24 에스케이하이닉스 주식회사 적층 반도체 칩을 포함하는 반도체 패키지
US12196781B2 (en) 2019-12-31 2025-01-14 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
US11761982B1 (en) 2019-12-31 2023-09-19 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact and methods for making such probes
US12196782B2 (en) 2019-12-31 2025-01-14 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
US11802891B1 (en) 2019-12-31 2023-10-31 Microfabrica Inc. Compliant pin probes with multiple spring segments and compression spring deflection stabilization structures, methods for making, and methods for using
US11171103B2 (en) 2020-01-06 2021-11-09 International Business Machines Corporation Solder ball dimension management
JP2021120924A (ja) * 2020-01-30 2021-08-19 株式会社ヨコオ 検査用ソケット
US11774467B1 (en) 2020-09-01 2023-10-03 Microfabrica Inc. Method of in situ modulation of structural material properties and/or template shape
US12146898B2 (en) 2020-10-02 2024-11-19 Microfabrica Inc. Multi-beam probes with decoupled structural and current carrying beams and methods of making
TWI755919B (zh) * 2020-11-03 2022-02-21 中華精測科技股份有限公司 板狀連接器與其雙環式串接件、及晶圓測試組件
EP4415799A4 (en) * 2021-10-15 2025-09-10 Uti Lp MICRONEEDLE AND ARRAY AND METHOD FOR MANUFACTURING THE SAME
US12160061B2 (en) * 2022-02-23 2024-12-03 Te Connectivity Solutions Gmbh Metal composite for use with separable electrical interfaces
USD1037522S1 (en) 2022-11-30 2024-07-30 Eaton Intelligent Power Limited Floodlight
CN116100111B (zh) * 2023-04-13 2023-06-13 微网优联科技(成都)有限公司 一种用于摄像头模组与电路板的高精密焊接装置及方法
CN116230654B (zh) * 2023-05-10 2023-07-21 之江实验室 晶上系统组装结构及其组装方法

Family Cites Families (293)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258736A (en) * 1966-06-28 Electrical connector
US3302067A (en) * 1967-01-31 Modular circuit package utilizing solder coated
US518020A (en) * 1894-04-10 John carnes
US2429222A (en) * 1943-06-05 1947-10-21 Bell Telephone Labor Inc Method of making contact wires
DE1026876B (de) 1953-06-17 1958-03-27 Telefunken Gmbh Verfahren zur Herstellung von p-n-UEbergaengen bestimmter Sperrschichtgroesse
US2869040A (en) 1954-01-11 1959-01-13 Sylvania Electric Prod Solder-dipped stamped wiring
US2923859A (en) * 1955-07-20 1960-02-02 Philco Corp Manufacture of electrical appliances with printed wiring panels
US2824269A (en) * 1956-01-17 1958-02-18 Bell Telephone Labor Inc Silicon translating devices and silicon alloys therefor
BE555318A (en:Method) 1956-03-07
US3119172A (en) * 1959-05-15 1964-01-28 Jerome J M Mazenko Method of making an electrical connection
US3087239A (en) * 1959-06-19 1963-04-30 Western Electric Co Methods of bonding leads to semiconductive devices
US3075282A (en) * 1959-07-24 1963-01-29 Bell Telephone Labor Inc Semiconductor device contact
NL242762A (en:Method) 1959-08-27
US3202489A (en) * 1959-12-01 1965-08-24 Hughes Aircraft Co Gold-aluminum alloy bond electrode attachment
US2967216A (en) * 1960-03-08 1961-01-03 Henry S Zablocki Contact making assembly
US3047683A (en) * 1961-03-22 1962-07-31 Jr Bernard Edward Shlesinger Multiple contact switch
US3227933A (en) * 1961-05-17 1966-01-04 Fairchild Camera Instr Co Diode and contact structure
US3189799A (en) 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
US3241011A (en) 1962-12-26 1966-03-15 Hughes Aircraft Co Silicon bonding technology
GB1064290A (en) * 1963-01-14 1967-04-05 Motorola Inc Method of making semiconductor devices
US3296692A (en) * 1963-09-13 1967-01-10 Bell Telephone Labor Inc Thermocompression wire attachments to quartz crystals
DE1514304A1 (de) 1964-04-03 1969-05-14 Philco Ford Corp Halbleiteranordnung und Herstellungsverfahren hierfuer
US3381081A (en) * 1965-04-16 1968-04-30 Cts Corp Electrical connection and method of making the same
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors
FR1483574A (en:Method) * 1965-06-24 1967-09-06
US3368114A (en) * 1965-07-06 1968-02-06 Radiation Inc Microelectronic circuit packages with improved connection structure
US3460328A (en) 1965-10-06 1969-08-12 William S Lee Fruit picker
US3445770A (en) * 1965-12-27 1969-05-20 Philco Ford Corp Microelectronic test probe with defect marker access
US3390308A (en) * 1966-03-31 1968-06-25 Itt Multiple chip integrated circuit assembly
US3426252A (en) * 1966-05-03 1969-02-04 Bell Telephone Labor Inc Semiconductive device including beam leads
US3517438A (en) * 1966-05-12 1970-06-30 Ibm Method of packaging a circuit module and joining same to a circuit substrate
DE1539692A1 (de) * 1966-06-23 1969-10-16 Blume & Redecker Gmbh Umklebevorrichtung fuer Spulen
US3460238A (en) * 1967-04-20 1969-08-12 Motorola Inc Wire severing in wire bonding machines
US3490141A (en) * 1967-10-02 1970-01-20 Motorola Inc High voltage rectifier stack and method for making same
US3495170A (en) * 1967-11-24 1970-02-10 James R Biard Method for the indirect measurement of resistivities and impurity concentrations in a semiconductor body including an epitaxial film
US3519890A (en) * 1968-04-01 1970-07-07 North American Rockwell Low stress lead
US3509270A (en) * 1968-04-08 1970-04-28 Ney Co J M Interconnection for printed circuits and method of making same
FR1569990A (en:Method) * 1968-04-23 1969-06-06
NL6907704A (en:Method) * 1968-05-30 1969-12-02
US3567846A (en) * 1968-05-31 1971-03-02 Gen Cable Corp Metallic sheathed cables with roam cellular polyolefin insulation and method of making
US3590480A (en) * 1968-10-03 1971-07-06 Theodore H Johnson Jr Method of manufacturing a pulse transformer package
GB1292459A (en) * 1968-12-09 1972-10-11 Ericsson Telefon Ab L M Wire
US3555477A (en) * 1969-01-21 1971-01-12 Standard Int Corp Electrical inductor and method of making the same
US3826984A (en) * 1969-02-28 1974-07-30 Licentia Gmbh Measuring device for the dynamic measurement of semiconductor parameters and method of making such a device
US3673681A (en) * 1969-04-01 1972-07-04 Inforex Electrical circuit board wiring
US3591839A (en) * 1969-08-27 1971-07-06 Siliconix Inc Micro-electronic circuit with novel hermetic sealing structure and method of manufacture
US3569610A (en) * 1969-10-15 1971-03-09 Gen Cable Corp Ethylene-propylene rubber insulated cable with cross-linked polyethylene strand shielding
US3623127A (en) * 1969-11-03 1971-11-23 Ashley C Glenn Electrical printed circuit switching device
JPS4919634B1 (en:Method) * 1969-12-29 1974-05-18
US3676776A (en) * 1970-01-19 1972-07-11 Siemens Ag Testing probe construction
US3616532A (en) * 1970-02-02 1971-11-02 Sperry Rand Corp Multilayer printed circuit electrical interconnection device
US3662454A (en) * 1970-03-18 1972-05-16 Rca Corp Method of bonding metals together
DE2119567C2 (de) * 1970-05-05 1983-07-14 International Computers Ltd., London Elektrische Verbindungsvorrichtung und Verfahren zu ihrer Herstellung
US3663920A (en) * 1970-07-27 1972-05-16 Burndy Corp Mounting for integrated circuits
US3680037A (en) * 1970-11-05 1972-07-25 Tech Wire Prod Inc Electrical interconnector
US3753665A (en) * 1970-11-12 1973-08-21 Gen Electric Magnetic film plated wire
US3844909A (en) * 1970-11-12 1974-10-29 Gen Electric Magnetic film plated wire and substrates therefor
US3779804A (en) 1970-12-30 1973-12-18 Nat Lead Co Electrodes for ceramic bodies
DE2104207C3 (de) * 1971-01-29 1974-04-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Verbinden eines Kontaktierungsdrahtes
US3724068A (en) * 1971-02-25 1973-04-03 Du Pont Semiconductor chip packaging apparatus and method
US3734386A (en) * 1971-06-30 1973-05-22 Ibm Wiring apparatus with wire path forming means
US3747198A (en) * 1971-08-19 1973-07-24 Gen Electric Tailless wedge bonding of gold wire to palladium-silver cermets
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
US3714384A (en) * 1971-11-24 1973-01-30 Exxon Production Research Co Subsea electric connector system and procedure for use
CA954635A (en) * 1972-06-06 1974-09-10 Microsystems International Limited Mounting leads and method of fabrication
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
US3811186A (en) * 1972-12-11 1974-05-21 Ibm Method of aligning and attaching circuit devices on a substrate
US3806801A (en) * 1972-12-26 1974-04-23 Ibm Probe contactor having buckling beam probes
US3842189A (en) * 1973-01-08 1974-10-15 Rca Corp Contact array and method of making the same
US3795884A (en) * 1973-03-06 1974-03-05 Amp Inc Electrical connector formed from coil spring
US3849728A (en) * 1973-08-21 1974-11-19 Wentworth Labor Inc Fixed point probe card and an assembly and repair fixture therefor
US3924918A (en) * 1973-10-09 1975-12-09 Du Pont Daughter board contact
US4038599A (en) * 1974-12-30 1977-07-26 International Business Machines Corporation High density wafer contacting and test system
JPS5626446Y2 (en:Method) 1975-08-22 1981-06-23
US3982811A (en) * 1975-09-22 1976-09-28 Rockwell International Corporation Electrical terminal
US4085502A (en) 1977-04-12 1978-04-25 Advanced Circuit Technology, Inc. Jumper cable
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
EP0002166A3 (fr) 1977-11-18 1979-08-08 International Business Machines Corporation Support pour microplaquettes de circuits intégrés, et son procédé de fabrication
JPS54146581U (en:Method) 1978-03-31 1979-10-12
JPS54146581A (en) 1978-05-09 1979-11-15 Mitsubishi Electric Corp Electric chracteristic measuring device for semiconductor chip
JPS5555985U (en:Method) * 1978-10-12 1980-04-16
JPS568081U (en:Method) * 1979-06-29 1981-01-23
JPS5626446A (en) 1979-08-09 1981-03-14 Nec Corp Semiconductor device
DE2936248A1 (de) 1979-09-07 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum betrieb eines ringinterferometers als rotationssensor
US4332341A (en) * 1979-12-26 1982-06-01 Bell Telephone Laboratories, Incorporated Fabrication of circuit packages using solid phase solder bonding
SU1003396A1 (ru) 1980-02-08 1983-03-07 Институт коллоидной химии и химии воды АН УССР Электрический соединитель
US4523144A (en) * 1980-05-27 1985-06-11 Japan Electronic Materials Corp. Complex probe card for testing a semiconductor wafer
JPS5728337A (en) 1980-07-28 1982-02-16 Hitachi Ltd Connecting constructin of semiconductor element
US4303291A (en) * 1980-11-24 1981-12-01 Western Electric Company, Inc. Method of seating connector terminals on circuit board contact pads
US4418857A (en) * 1980-12-31 1983-12-06 International Business Machines Corp. High melting point process for Au:Sn:80:20 brazing alloy for chip carriers
US4385341A (en) * 1981-03-19 1983-05-24 Northern Telecom Limited Strain relief member for flat flexible cables
EP0078337B1 (de) * 1981-10-30 1987-04-22 Ibm Deutschland Gmbh Kontakteinrichtung zur lösbaren Verbindung elektrischer Bauteile
US4532152A (en) * 1982-03-05 1985-07-30 Elarde Vito D Fabrication of a printed circuit board with metal-filled channels
JPS59195856A (ja) * 1983-04-20 1984-11-07 Fujitsu Ltd 半導体装置及びその製造方法
US4705205A (en) * 1983-06-30 1987-11-10 Raychem Corporation Chip carrier mounting device
US4664309A (en) * 1983-06-30 1987-05-12 Raychem Corporation Chip mounting device
US4553192A (en) * 1983-08-25 1985-11-12 International Business Machines Corporation High density planar interconnected integrated circuit package
JPS6089494A (ja) 1983-10-20 1985-05-20 Shimadzu Corp Ｄνａ等合成装置
US4615573A (en) * 1983-10-28 1986-10-07 Honeywell Inc. Spring finger interconnect for IC chip carrier
US4545610A (en) * 1983-11-25 1985-10-08 International Business Machines Corporation Method for forming elongated solder connections between a semiconductor device and a supporting substrate
US4751199A (en) * 1983-12-06 1988-06-14 Fairchild Semiconductor Corporation Process of forming a compliant lead frame for array-type semiconductor packages
JPS60150657U (ja) 1984-03-14 1985-10-07 シチズン時計株式会社 フロツピデイスクドライブにおけるデイスク検出機構
US4548451A (en) 1984-04-27 1985-10-22 International Business Machines Corporation Pinless connector interposer and method for making the same
US4667219A (en) * 1984-04-27 1987-05-19 Trilogy Computer Development Partners, Ltd. Semiconductor chip interface
US4697143A (en) * 1984-04-30 1987-09-29 Cascade Microtech, Inc. Wafer probe
DK291184D0 (da) 1984-06-13 1984-06-13 Boeegh Petersen Allan Fremgangsmaade og indretning til test af kredsloebsplader
DE3577371D1 (de) 1984-07-27 1990-05-31 Toshiba Kawasaki Kk Apparat zum herstellen einer halbleiteranordnung.
DE3536908A1 (de) * 1984-10-18 1986-04-24 Sanyo Electric Co., Ltd., Moriguchi, Osaka Induktivitaetselement und verfahren zur herstellung desselben
DE3442131A1 (de) * 1984-11-17 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen
US4634199A (en) 1985-01-22 1987-01-06 Itt Corporation Connector assembly for making multiple connections in a thin space
JPS61170054U (en:Method) 1985-04-11 1986-10-22
JPH0763083B2 (ja) 1985-04-22 1995-07-05 日本特殊陶業株式会社 端子接続構造およびその接続方法
US4642889A (en) * 1985-04-29 1987-02-17 Amp Incorporated Compliant interconnection and method therefor
US4724383A (en) 1985-05-03 1988-02-09 Testsystems, Inc. PC board test fixture
US4757256A (en) 1985-05-10 1988-07-12 Micro-Probe, Inc. High density probe card
JPS61287155A (ja) * 1985-06-14 1986-12-17 Hitachi Ltd 半導体装置及び半導体装置の製造方法
JPS61287254A (ja) 1985-06-14 1986-12-17 Hitachi Device Eng Co Ltd 半導体装置
US4780836A (en) * 1985-08-14 1988-10-25 Kabushiki Kaisha Toshiba Method of testing semiconductor devices using a probe card
US4746857A (en) * 1985-09-13 1988-05-24 Danippon Screen Mfg. Co. Ltd. Probing apparatus for measuring electrical characteristics of semiconductor device formed on wafer
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5829128A (en) * 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
AT385932B (de) 1985-12-13 1988-06-10 Neumayer Karl Band- bzw. drahtfoermiges material
US4727319A (en) * 1985-12-24 1988-02-23 Hughes Aircraft Company Apparatus for on-wafer testing of electrical circuits
US4793814A (en) * 1986-07-21 1988-12-27 Rogers Corporation Electrical circuit board interconnect
FR2594603B1 (fr) * 1986-02-14 1988-10-14 Radiotechnique Compelec Connecteur pour bus informatique
JPS62165994U (en:Method) 1986-04-11 1987-10-21
JPS62253807A (ja) 1986-04-23 1987-11-05 ショーボンド建設株式会社 床版下面のコンクリ−ト落下防護方法
US4878611A (en) * 1986-05-30 1989-11-07 American Telephone And Telegraph Company, At&T Bell Laboratories Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate
US4728751A (en) * 1986-10-06 1988-03-01 International Business Machines Corporation Flexible electrical connection and method of making same
US4777564A (en) * 1986-10-16 1988-10-11 Motorola, Inc. Leadform for use with surface mounted components
US4764723A (en) * 1986-11-10 1988-08-16 Cascade Microtech, Inc. Wafer probe
US4764848A (en) * 1986-11-24 1988-08-16 International Business Machines Corporation Surface mounted array strain relief device
US4955523A (en) * 1986-12-17 1990-09-11 Raychem Corporation Interconnection of electronic components
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
US5086337A (en) * 1987-01-19 1992-02-04 Hitachi, Ltd. Connecting structure of electronic part and electronic device using the structure
JP2533511B2 (ja) * 1987-01-19 1996-09-11 株式会社日立製作所 電子部品の接続構造とその製造方法
US4983907A (en) * 1987-05-14 1991-01-08 Intel Corporation Driven guard probe card
US5045975A (en) * 1987-05-21 1991-09-03 Cray Computer Corporation Three dimensionally interconnected module assembly
US5195237A (en) * 1987-05-21 1993-03-23 Cray Computer Corporation Flying leads for integrated circuits
DE3856562T2 (de) * 1987-07-03 2004-08-05 Sumitomo Electric Industries, Ltd. Verbindungsstruktur zwischen Bauelementen für Halbleiterapparat
US5198752A (en) * 1987-09-02 1993-03-30 Tokyo Electron Limited Electric probing-test machine having a cooling system
US4870356A (en) * 1987-09-30 1989-09-26 Digital Equipment Corporation Multi-component test fixture
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
US4918032A (en) 1988-04-13 1990-04-17 General Motors Corporation Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures
US5103557A (en) 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US4899099A (en) * 1988-05-19 1990-02-06 Augat Inc. Flex dot wafer probe
JPH01313969A (ja) 1988-06-13 1989-12-19 Hitachi Ltd 半導体装置
US5059143A (en) * 1988-09-08 1991-10-22 Amp Incorporated Connector contact
US4899107A (en) * 1988-09-30 1990-02-06 Micron Technology, Inc. Discrete die burn-in for nonpackaged die
US4998062A (en) * 1988-10-25 1991-03-05 Tokyo Electron Limited Probe device having micro-strip line structure
DE3838413A1 (de) 1988-11-12 1990-05-17 Mania Gmbh Adapter fuer elektronische pruefvorrichtungen fuer leiterplatten und dergl.
US4996629A (en) * 1988-11-14 1991-02-26 International Business Machines Corporation Circuit board with self-supporting connection between sides
JP3151203B2 (ja) * 1988-11-23 2001-04-03 テキサス インスツルメンツ インコーポレイテツド 集積回路の自己検査装置
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
JPH07114227B2 (ja) * 1989-01-07 1995-12-06 三菱電機株式会社 ウエハ試験用探触板
US5214375A (en) * 1989-02-06 1993-05-25 Giga Probe, Inc. Multi-point probe assembly for testing electronic device
US4985676A (en) * 1989-02-17 1991-01-15 Tokyo Electron Limited Method and apparatus of performing probing test for electrically and sequentially testing semiconductor device patterns
FR2643753A1 (fr) 1989-02-28 1990-08-31 Commissariat Energie Atomique Procede d'interconnexion de composants electriques au moyen d'elements conducteurs, deformables et sensiblement spheriques
JPH02237047A (ja) * 1989-03-09 1990-09-19 Mitsubishi Electric Corp 半導体試験装置
US5396104A (en) 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device
US5073117A (en) * 1989-03-30 1991-12-17 Texas Instruments Incorporated Flip-chip test socket adaptor and method
JP2810101B2 (ja) 1989-04-17 1998-10-15 日本エー・エム・ピー株式会社 電気ピンおよびその製造方法
US4914814A (en) * 1989-05-04 1990-04-10 International Business Machines Corporation Process of fabricating a circuit package
JP2598129B2 (ja) * 1989-05-18 1997-04-09 三菱電機株式会社 半導体装置
US5060843A (en) 1989-06-07 1991-10-29 Nec Corporation Process of forming bump on electrode of semiconductor chip and apparatus used therefor
US5007872A (en) * 1989-06-12 1991-04-16 Babcock Display Products, Inc. Screened interconnect system
US5366380A (en) 1989-06-13 1994-11-22 General Datacomm, Inc. Spring biased tapered contact elements for electrical connectors and integrated circuit packages
US5349495A (en) 1989-06-23 1994-09-20 Vlsi Technology, Inc. System for securing and electrically connecting a semiconductor chip to a substrate
US5047711A (en) * 1989-08-23 1991-09-10 Silicon Connections Corporation Wafer-level burn-in testing of integrated circuits
US5055778A (en) * 1989-10-02 1991-10-08 Nihon Denshizairyo Kabushiki Kaisha Probe card in which contact pressure and relative position of each probe end are correctly maintained
US5156983A (en) * 1989-10-26 1992-10-20 Digtial Equipment Corporation Method of manufacturing tape automated bonding semiconductor package
US4998885A (en) 1989-10-27 1991-03-12 International Business Machines Corporation Elastomeric area array interposer
JPH03142847A (ja) 1989-10-30 1991-06-18 Hitachi Ltd 半導体集積回路装置
US5399982A (en) 1989-11-13 1995-03-21 Mania Gmbh & Co. Printed circuit board testing device with foil adapter
CA2004436C (en) * 1989-12-01 1999-06-29 Alain Comeau Test chip for use in semiconductor fault analysis
US5095187A (en) * 1989-12-20 1992-03-10 Raychem Corporation Weakening wire supplied through a wire bonder
US5007576A (en) 1989-12-26 1991-04-16 Hughes Aircraft Company Testable ribbon bonding method and wedge bonding tool for microcircuit device fabrication
JPH03212006A (ja) * 1990-01-17 1991-09-17 Sony Corp 高周波回路用パッケージ
US4989069A (en) * 1990-01-29 1991-01-29 Motorola, Inc. Semiconductor package having leads that break-away from supports
US5066907A (en) 1990-02-06 1991-11-19 Cerprobe Corporation Probe system for device and circuit testing
US5123850A (en) 1990-04-06 1992-06-23 Texas Instruments Incorporated Non-destructive burn-in test socket for integrated circuit die
US5071359A (en) 1990-04-27 1991-12-10 Rogers Corporation Array connector
US5070297A (en) * 1990-06-04 1991-12-03 Texas Instruments Incorporated Full wafer integrated circuit testing device
US5130779A (en) * 1990-06-19 1992-07-14 International Business Machines Corporation Solder mass having conductive encapsulating arrangement
JP3068163B2 (ja) 1990-07-18 2000-07-24 株式会社東芝 スペースダイバーシティ制御装置
US5187020A (en) * 1990-07-31 1993-02-16 Texas Instruments Incorporated Compliant contact pad
JP3208734B2 (ja) 1990-08-20 2001-09-17 東京エレクトロン株式会社 プローブ装置
US5140405A (en) * 1990-08-30 1992-08-18 Micron Technology, Inc. Semiconductor assembly utilizing elastomeric single axis conductive interconnect
US5136367A (en) 1990-08-31 1992-08-04 Texas Instruments Incorporated Low cost erasable programmable read only memory package
JPH04139850A (ja) 1990-10-01 1992-05-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその検査方法
US5166774A (en) * 1990-10-05 1992-11-24 Motorola, Inc. Selectively releasing conductive runner and substrate assembly having non-planar areas
US5325052A (en) * 1990-11-30 1994-06-28 Tokyo Electron Yamanashi Limited Probe apparatus
US5154341A (en) * 1990-12-06 1992-10-13 Motorola Inc. Noncollapsing multisolder interconnection
US5163834A (en) * 1990-12-17 1992-11-17 International Business Machines Corporation High density connector
DE69219165T2 (de) 1991-01-11 1997-08-07 Texas Instruments Inc Prüf- und Einbrennsystem für einen Wafer und Methode für deren Herstellung
JPH04240570A (ja) 1991-01-24 1992-08-27 Shimadzu Corp マイクロ・プローブ・ボード
US5097100A (en) * 1991-01-25 1992-03-17 Sundstrand Data Control, Inc. Noble metal plated wire and terminal assembly, and method of making the same
US5148968A (en) * 1991-02-11 1992-09-22 Motorola, Inc. Solder bump stretch device
US5157325A (en) 1991-02-15 1992-10-20 Compaq Computer Corporation Compact, wireless apparatus for electrically testing printed circuit boards
JPH04264758A (ja) 1991-02-20 1992-09-21 Nec Corp 半導体チップキャリア
DE4109908C2 (de) * 1991-03-26 1994-05-05 Erich Reitinger Anordnung zur Prüfung von Halbleiter-Wafern
KR920022482A (ko) * 1991-05-09 1992-12-19 가나이 쯔도무 전자부품 탑재모듈
US5559444A (en) 1991-06-04 1996-09-24 Micron Technology, Inc. Method and apparatus for testing unpackaged semiconductor dice
US5296744A (en) * 1991-07-12 1994-03-22 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
US5173055A (en) * 1991-08-08 1992-12-22 Amp Incorporated Area array connector
FR2680284B1 (fr) 1991-08-09 1993-12-03 Thomson Csf Dispositif de connexion a tres faible pas et procede de fabrication.
JPH0548000A (ja) 1991-08-13 1993-02-26 Fujitsu Ltd 半導体装置
JPH06510122A (ja) 1991-08-23 1994-11-10 エヌチップ　インコーポレイテッド パッケージされていない集積回路のバーン・イン技術
JP2967621B2 (ja) 1991-08-27 1999-10-25 日本電気株式会社 半導体装置用パッケージの製造方法
JP2511621B2 (ja) 1991-09-03 1996-07-03 エイ・ティ・アンド・ティ・コーポレーション ウェ―ハ検査装置
US5139427A (en) 1991-09-23 1992-08-18 Amp Incorporated Planar array connector and flexible contact therefor
WO1993007657A1 (en) * 1991-09-30 1993-04-15 Ceridian Corporation Plated compliant lead
JPH0754868B2 (ja) * 1991-09-30 1995-06-07 松下電器産業株式会社 高周波モジュール基板
EP0540319B1 (en) 1991-10-29 2000-02-09 Sumitomo Wiring Systems, Ltd. A wire harness
JPH05129357A (ja) 1991-11-01 1993-05-25 Tanaka Denshi Kogyo Kk ボンデイング用ワイヤ
US5391984A (en) 1991-11-01 1995-02-21 Sgs-Thomson Microelectronics, Inc. Method and apparatus for testing integrated circuit devices
US5350947A (en) 1991-11-12 1994-09-27 Nec Corporation Film carrier semiconductor device
US5199889A (en) * 1991-11-12 1993-04-06 Jem Tech Leadless grid array socket
EP0544957B1 (en) 1991-12-06 1995-05-17 Sigmatech Co. Ltd. Apparatus for inspecting internal circuit of semiconductor device
US5230632A (en) * 1991-12-19 1993-07-27 International Business Machines Corporation Dual element electrical contact and connector assembly utilizing same
JP2606554Y2 (ja) 1992-01-17 2000-11-27 株式会社東京精密 プロービング装置
US5279975A (en) 1992-02-07 1994-01-18 Micron Technology, Inc. Method of testing individual dies on semiconductor wafers prior to singulation
US5299939A (en) * 1992-03-05 1994-04-05 International Business Machines Corporation Spring array connector
US5440241A (en) 1992-03-06 1995-08-08 Micron Technology, Inc. Method for testing, burning-in, and manufacturing wafer scale integrated circuits and a packaged wafer assembly produced thereby
US5254939A (en) 1992-03-20 1993-10-19 Xandex, Inc. Probe card system
US5424651A (en) 1992-03-27 1995-06-13 Green; Robert S. Fixture for burn-in testing of semiconductor wafers, and a semiconductor wafer
US5247250A (en) * 1992-03-27 1993-09-21 Minnesota Mining And Manufacturing Company Integrated circuit test socket
US5457400A (en) 1992-04-10 1995-10-10 Micron Technology, Inc. Semiconductor array having built-in test circuit for wafer level testing
US5266889A (en) * 1992-05-29 1993-11-30 Cascade Microtech, Inc. Wafer probe station with integrated environment control enclosure
US5479109A (en) 1992-06-03 1995-12-26 Trw Inc. Testing device for integrated circuits on wafer
US5336992A (en) 1992-06-03 1994-08-09 Trw Inc. On-wafer integrated circuit electrical testing
JPH05340964A (ja) 1992-06-05 1993-12-24 Mitsubishi Electric Corp ウエハ及びチップの試験装置
US5345170A (en) 1992-06-11 1994-09-06 Cascade Microtech, Inc. Wafer probe station having integrated guarding, Kelvin connection and shielding systems
US5228861A (en) 1992-06-12 1993-07-20 Amp Incorporated High density electrical connector system
US5397967A (en) 1992-06-30 1995-03-14 Sgs-Thomson Microelectronics, Inc. Slew rate circuit for high side driver for a polyphase DC motor
US5442282A (en) 1992-07-02 1995-08-15 Lsi Logic Corporation Testing and exercising individual, unsingulated dies on a wafer
JP3151219B2 (ja) 1992-07-24 2001-04-03 テツセラ，インコーポレイテッド 取り外し自在のリード支持体を備えた半導体接続構成体およびその製造方法
JP3135378B2 (ja) 1992-08-10 2001-02-13 ローム株式会社 半導体試験装置
US5363038A (en) 1992-08-12 1994-11-08 Fujitsu Limited Method and apparatus for testing an unpopulated chip carrier using a module test card
KR970010656B1 (ko) 1992-09-01 1997-06-30 마쯔시다 덴기 산교 가부시끼가이샤 반도체 테스트 장치, 반도체 테스트 회로칩 및 프로브 카드
US5731633A (en) 1992-09-16 1998-03-24 Gary W. Hamilton Thin multichip module
JPH06230086A (ja) 1992-09-22 1994-08-19 Nec Corp Ｌｓｉのテスト回路
US5297967A (en) * 1992-10-13 1994-03-29 International Business Machines Corporation Electrical interconnector with helical contacting portion and assembly using same
US5371654A (en) 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
US5479108A (en) 1992-11-25 1995-12-26 David Cheng Method and apparatus for handling wafers
US5334804A (en) * 1992-11-17 1994-08-02 Fujitsu Limited Wire interconnect structures for connecting an integrated circuit to a substrate
US5656830A (en) 1992-12-10 1997-08-12 International Business Machines Corp. Integrated circuit chip composite having a parylene coating
US5389743A (en) 1992-12-21 1995-02-14 Hughes Aircraft Company Rivet design for enhanced copper thick-film I/O pad adhesion
US5386344A (en) 1993-01-26 1995-01-31 International Business Machines Corporation Flex circuit card elastomeric cable connector assembly
CA2110472C (en) 1993-03-01 1999-08-10 Anilkumar Chinuprasad Bhatt Method and apparatus for in-situ testing of integrated circuit chips
EP0615131A1 (en) 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Prober for semiconductor integrated circuit element wafer
JPH0792479B2 (ja) 1993-03-18 1995-10-09 東京エレクトロン株式会社 プローブ装置の平行度調整方法
US5303938A (en) * 1993-03-25 1994-04-19 Miller Donald C Kelvin chuck apparatus and method of manufacture
US5414298A (en) 1993-03-26 1995-05-09 Tessera, Inc. Semiconductor chip assemblies and components with pressure contact
JP3115155B2 (ja) 1993-05-28 2000-12-04 株式会社東芝 半導体装置およびその製造方法
KR100291109B1 (ko) 1993-05-31 2001-06-01 히가시 데쓰로 반도체 웨이퍼의 버언 인 검사기능을 구비한 프로우브 검사 및 리페어장치, 및 반도체 웨이퍼의 버언 인 검사장치
US5559446A (en) 1993-07-19 1996-09-24 Tokyo Electron Kabushiki Kaisha Probing method and device
US5550482A (en) 1993-07-20 1996-08-27 Tokyo Electron Kabushiki Kaisha Probe device
DE4325235C2 (de) 1993-07-28 1995-08-31 Junker Filter Gmbh Filterelement für ein Kammer-, Membranfilter oder dergleichen sowie Verfahren zu seiner Herstellung
US5621263A (en) 1993-08-09 1997-04-15 Murata Manufacturing Co., Ltd. Piezoelectric resonance component
US5570032A (en) 1993-08-17 1996-10-29 Micron Technology, Inc. Wafer scale burn-in apparatus and process
JPH07115113A (ja) 1993-08-25 1995-05-02 Nec Corp 半導体ウエハの試験装置および試験方法
US5488292A (en) 1993-10-04 1996-01-30 Tokyo Seimitsu Co., Ltd. Wafer inspecting system
US5410162A (en) 1993-10-15 1995-04-25 Texas Instruments Incorporated Apparatus for and method of rapid testing of semiconductor components at elevated temperature
US5884398A (en) * 1993-11-16 1999-03-23 Form Factor, Inc. Mounting spring elements on semiconductor devices
US6023103A (en) * 1994-11-15 2000-02-08 Formfactor, Inc. Chip-scale carrier for semiconductor devices including mounted spring contacts
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US5983493A (en) * 1993-11-16 1999-11-16 Formfactor, Inc. Method of temporarily, then permanently, connecting to a semiconductor device
US7073254B2 (en) * 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US6246247B1 (en) * 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US6624648B2 (en) * 1993-11-16 2003-09-23 Formfactor, Inc. Probe card assembly
US5601740A (en) 1993-11-16 1997-02-11 Formfactor, Inc. Method and apparatus for wirebonding, for severing bond wires, and for forming balls on the ends of bond wires
JP2967798B2 (ja) 1993-12-16 1999-10-25 株式会社東京精密 ウエハプローバ
US5585737A (en) 1993-12-27 1996-12-17 Tokyo Electron Kabushiki Kaisha Semiconductor wafer probing method including arranging index regions that include all chips and minimize the occurrence of non-contact between a chip and a probe needle during chip verification
US5455390A (en) 1994-02-01 1995-10-03 Tessera, Inc. Microelectronics unit mounting with multiple lead bonding
JP3256367B2 (ja) 1994-03-10 2002-02-12 新日本製鐵株式会社 樹脂被覆絶縁ボンディングワイヤ
US5534784A (en) 1994-05-02 1996-07-09 Motorola, Inc. Method for probing a semiconductor wafer
JP2565660B2 (ja) * 1994-05-31 1996-12-18 バンドー化学株式会社 繊維補強弾性体及びそれを用いた伝動ベルト
US5518964A (en) 1994-07-07 1996-05-21 Tessera, Inc. Microelectronic mounting with multiple lead deformation and bonding
US5590460A (en) 1994-07-19 1997-01-07 Tessera, Inc. Method of making multilayer circuit
KR960014952A (ko) 1994-10-14 1996-05-22 가즈오 가네코 반도체 웨이퍼의 번인 및 테스트방법과 그것에 사용되는 번인보드
JP2632136B2 (ja) 1994-10-17 1997-07-23 日本電子材料株式会社 高温測定用プローブカード
US5495667A (en) 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
US6727579B1 (en) * 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US5557501A (en) 1994-11-18 1996-09-17 Tessera, Inc. Compliant thermal connectors and assemblies incorporating the same
WO1996019829A1 (en) 1994-12-22 1996-06-27 Pace Benedict G Device for superheating steam
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
KR0156334B1 (ko) 1995-10-14 1998-10-15 김광호 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지
JP3809727B2 (ja) * 1998-06-17 2006-08-16 富士ゼロックス株式会社 情報処理システム、回路情報管理方法および回路情報記憶装置
JP3142847B2 (ja) 2000-01-01 2001-03-07 株式会社ソフィア パチンコ遊技機

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US5852871A (en) 1998-12-29
US20020023773A1 (en) 2002-02-28

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EP0645942A3 (en:Method)
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DK0645496T3 (en:Method)
EP0643239A3 (en:Method)
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