CN1934691A - 结合结构、引线结合方法、致动装置和液体喷射头 - Google Patents
结合结构、引线结合方法、致动装置和液体喷射头 Download PDFInfo
- Publication number
- CN1934691A CN1934691A CNA2005800090736A CN200580009073A CN1934691A CN 1934691 A CN1934691 A CN 1934691A CN A2005800090736 A CNA2005800090736 A CN A2005800090736A CN 200580009073 A CN200580009073 A CN 200580009073A CN 1934691 A CN1934691 A CN 1934691A
- Authority
- CN
- China
- Prior art keywords
- connecting portion
- bonding pad
- combined leads
- wire
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000012530 fluid Substances 0.000 description 28
- 239000000976 ink Substances 0.000 description 15
- 208000010392 Bone Fractures Diseases 0.000 description 5
- 102000000584 Calmodulin Human genes 0.000 description 5
- 108010041952 Calmodulin Proteins 0.000 description 5
- 206010017076 Fracture Diseases 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
- H01L2224/48456—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供了一种结合结构和引线结合方法。结合引线连接至结合片的结合部分(200)由引线边缘侧上的第一连接部分(201)和与第一连接部分(201)连续的第二连接部分(202)组成。与150℃的常用引线结合温度相比,即使以相对较低的温度进行引线结合,仍然能够增加结合引线(120)和接线端部分(90a)的结合强度,可以缩窄连接至接线端部分(90a)的结合引线(120)的接合点宽度,并可以通过缩窄接线端部分(90a)的宽度缩窄相邻的接线端部分(90a)之间的间距。
Description
技术领域
本发明涉及包括连接到结合片的结合引线的结合结构和用于构造该结合结构的引线结合方法。更具体而言,本发明涉及优选应用到装备有振动板和压电元件的致动装置的结构和方法,特别是优选应用到液体喷射头的结构和方法,在该液体喷射头中,与喷射墨滴的喷嘴孔连通的压力产生腔的一部分由振动板构成,压电元件形成于振动板的表面上,墨滴通过压电层的移动来喷射。
背景技术
装备有通过施加电压而移动的压电元件的致动装置例如安装在用于喷射液滴的液体喷射头上。已知的液体喷射头例如是喷墨记录头,在该喷墨记录头中,与喷嘴孔连通的压力产生腔的一部分由振动板构成,振动板通过压电元件而变形以对压力产生腔中的墨水加压,由此从喷嘴孔喷射墨滴。两种类型的喷墨记录头被投入实用。其中一种安装有纵向振动模式的压电致动装置,其在压电元件的轴向上膨胀和收缩。另一种安装有弯曲振动模式的压电致动装置。
后一种喷墨记录头采用的结构中,驱动IC安装在结合到通道形成衬底的板(例如储液室形成板)上,通道形成衬底中形成有压力产生腔,驱动IC和从各个压电元件引出的引线电极的接线端部分通过引线结合方式用结合引线电连接(例如见专利文献1)。在这种喷墨记录头的生产中进行的引线结合是这样进行的:用毛细管将结合引线的一端连接到驱动IC的接线端部分,然后用毛细管将结合引线的另一端连接到结合片,该结合片是引线电极的接线端部分。
一般来说,引线结合是通过以150℃或更高的温度加热来进行的,由此出现以下问题:以这样的高温加热使构成喷墨记录头的各个板热膨胀,直到它们被损坏。因此,需要以尽可能低的温度加热来进行喷墨记录头中的引线结合。但是,以低温加热来进行引线结合会出现不能保证结合引线和结合片之间的足够的结合强度的问题。
此外,对于使用结合引线的装置来说需要高密度的引线,这对于喷墨记录头来说尤其明显。但是,根据通常的引线结合,结合引线在294至882×10-3N的载荷下压靠结合片用于连接。由此,结合引线中连接到结合片的结合部位(接合点区域)形成有二至三倍于引线直径的接合点宽度和0.1倍于引线直径或更小的接合点厚度。因此,结合片的尺寸必须大于接合点区域的宽度,由此出现不能减小结合片的宽度和间距以实现高密度的问题。考虑到此,提出了用于引线结合的电极结构,其中凹陷或凸起设置在衬底上的电极的引线结合区域中,以强制提供结合引线的压力结合尺寸,由此确保了结合强度并减小了电极的宽度和间距(例如见专利文献2)。
但是,根据专利文献2,尽管与传统的结合引线相比能够确保结合强度,但是仅强制地提供了压力结合尺寸,而仍然出现不能增加结合强度的问题。该专利文献还需要加工用于在电极的结合引线区域中提供凹陷或凸起,由此包含了复杂的制造过程和高制造成本的问题。这些问题不仅对于诸如喷墨记录头之类的液体喷射头存在,而且对于具有利用半导体元件(例如LSI和IC)的结合引线连接结构的装置也存在。
引线结合包括以下步骤:通过毛细管将结合引线压靠结合片,以将结合引线连接到结合片。对于非约束状态下的结合引线,抬升毛细管以建立结合引线没有被补偿预定量的状态。然后,结合引线进入约束状态,并且在此状态下,进一步抬升毛细管,并压靠结合引线以使其薄壁位置破裂。然后,用于承载已经被补偿预定量的结合引线的毛细管移动至下一个结合区域以进行结合工作。
例如日本专利文献No.3和No.4提出结合区域的强度可以通过用球建立突出部或进行球焊来确保。但是,这些技术都使用单个结合操作,因此不能在低温条件下提高结合强度。
在以低温加热进行的引线结合中,热量较低因此增加超声波的幅度以补偿较低的热量,由此使用由于摩擦而产生的热量。在这种情况下,在通过毛细管将结合引线压靠结合片以使之结合时,结合区域可能由于振幅而裂开。如果结合区域中发生破裂,则可能不会通过焊枪(torch)进行放电,因而导致不充分的结合。如果在结合引线通过毛细管压靠结合片时结合区域断裂,还没有从毛细管的前端对结合引线进行预定量的补偿,使得下一次结合时需要对结合引线进行人工补偿的操作。
专利文献1:日本专利申请公开No.2002-160366(第3页,图2)
专利文献2:日本专利申请公开No.H5-251856(第2-3页,图1)
专利文献3:日本专利申请公开No.2000-252315
专利文献4:日本专利申请公开No.H5-129357
发明内容
本发明要解决的问题
本发明是考虑到前述问题而实现的。本发明的一个目的是提供一种结合结构和一种引线结合方法,即使在以较低温度加热而进行引线结合时它们也能够增加结合强度。
本发明的另一个目的是提供一种采用结合结构的致动装置和液体喷射头,该结合结构即使在以较低温度加热而进行引线结合时也能增加结合强度。
解决问题的手段
用于获得以上目的的本发明的第一方面是一种结合结构,包括:结合引线;结合片;和结合部位,所述结合引线在所述结合部位处连接至所述结合片,并且其中,所述结合部位由前端侧上的第一连接部位和与所述第一连接部位连续的第二连接部位组成。
在第一方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为结合部位由第一连接部位和与第一连接部位连续的第二连接部位组成。因为可以增加结合强度,所以可以缩窄连接至结合片的结合引线的接合点宽度,可以缩窄结合片的宽度,并可以减小结合片和邻近的结合片之间的间距。
本发明的第二方面是根据第一方面的结合结构,其特征在于与所述第一连接部位相比,所述第二连接部位具有更高的抗拉强度。
在第二方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为第二连接部位具有较高的抗拉强度。
本发明的第三方面是根据第一方面或第二方面的结合结构,其特征在于,与所述第一连接部位相比,所述第二连接部位是通过施加更大幅度的超声波至所述第二连接部位来连接的。
在第三方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为第二连接部位是通过施加较大幅度的超声波来连接的。
本发明的第四方面是根据第一至第三方面中任一项的结合结构,其特征在于,所述第二连接部位的接合点宽度大于所述第一连接部位的接合点宽度。
在第四方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为第二连接部位的接合点宽度较大。
本发明的第五方面是根据第一至第四方面中任一项的结合结构,其特征在于,所述第二连接部位的厚度小于所述第一连接部位的厚度。
在第五方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为第二连接部位的厚度较小,也就是说,用于第二连接部位的结合较牢固,并且遭受的剥离最小。
本发明的第六方面是根据第一至第五方面中任一项的结合结构,其特征在于,至少所述结合片的连接至所述结合引线的表面包含金。
在第六方面中,使用包含金的结合片,使得可以可靠地结合包含金的结合引线,并可以增加其结合强度。
本发明的第七方面是一种用于将结合引线连接至结合片的引线结合方法,所述方法包括下列步骤:将毛细管压靠所述结合片,同时加热所述结合引线并施加超声波,以连接所述结合引线至所述结合片,由此形成第一连接部位;以及在与所述第一连接部位连续的部位处将工具压靠所述结合片,同时加热所述结合引线并施加超声波,以连接所述结合引线至所述结合片,由此形成第二连接部位。
在第七方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为结合部位由第一连接部位和与第一连接部位连续的第二连接部位组成。因为可以增加结合强度,所以可以缩窄连接至结合片的结合引线的接合点宽度,可以缩窄结合片的宽度,并可以减小结合片和邻近的结合片之间的间距。
本发明的第八方面是根据第七方面的引线结合方法,其特征在于,在所述第二连接部位处施加比所述第一连接部位处更大幅度的超声波。
在第八方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然能够增加结合引线和结合片之间的结合强度,因为第二连接部位是通过施加较大幅度的超声波来连接的。
本发明的第九方面是根据第七或第八方面的引线结合方法,其特征在于,所述工具是所述毛细管,所述毛细管中没有插入所述结合引线。
在第九方面中,单个毛细管可以形成第一连接部位和第二连接部位。
本发明的第十方面是一种致动装置,包括:设置在衬底表面上的振动板;多个压电元件,每个所述多个压电元件由通过所述振动板设置的下电极、压电层和上电极组成;和电连接至所述压电元件的结合片,所述结合片具有连接至所述结合片的结合引线,并且其中,所述结合引线通过第一至第五方面中任一项所述的结合结构连接至所述结合片。
在第十方面中,与常用的引线结合温度150℃相比,以相对较低的温度进行引线结合仍然实现了具有能够增加结合引线和结合片之间的结合强度的结合结构的致动装置。
本发明的第十一方面是根据第十方面的致动装置,其包括从所述压电元件引出的引出引线,并且其特征在于,所述引出引线的前端部限定所述结合片。
在第十一方面中,可以以高密度提供连接至结合引线的引出引线,而不会短路,并且可以以高密度布置压电元件。
本发明的第十二方面是根据第十或第十一方面的致动装置,其特征在于,所述结合引线中的每个具有连接至用于驱动所述压电元件的驱动IC的接线端部分的一端,并具有连接至所述结合片的另一端。
在的十二方面中,可以以高强度将结合引线结合至位于第二结合侧上的结合片,并且可以缩窄结合引线的接合点宽度。
本发明的第十三方面是一种液体喷射头,包括:根据第十至第十二方面中任一项所述的致动装置;和通道形成衬底,与喷嘴孔连通的压力产生腔形成于所述通道形成衬底中,所述致动装置设置在所述通道形成衬底的表面上。
在第十三方面中,可以增加驱动IC和其它结合片之间的结合强度,可以缩窄结合片的宽度,并可以以高密度布置喷嘴孔。
本发明的效果
即使在以较低温度加热进行引线结合的情况下,本发明的结合结构和引线结合方法也可以增加结合强度。
本发明提供了采用结合结构的致动装置和液体喷射头,即使在以较低温度加热进行引线结合的情况下,该结合结构也能够增加结合强度。
附图说明
图1是根据本发明实施例的液体喷射头的分解立体图。
图2(a)和2(b)分别是根据本发明实施例的液体喷射头的俯视图和剖视图。
图3的立体图示出根据本发明的引线结合中的连接结构。
图4(a)和4(b)是液体喷射头的主要部分的剖视图,示出根据本发明实施例的引线结合方法。
图5(a)和5(b)是引线结合方法中的步骤的说明视图。
图6(a)和6(b)是结合引线的连接部位的外部视图。
图7的曲线图示出对根据本发明的结合引线进行测试的结果。
具体实施方式
以下将基于提供的实施例详细描述本发明。
图1是示出根据本发明实施例的液体喷射头的分解立体图。图2(a)和2(b)分别是图1的液体喷射头的俯视图和剖视图。在本实施例中,构成液体喷射头的通道形成衬底10由单晶硅衬底制成。由通过热氧化预先形成的二氧化硅制成的弹性膜50形成在通道形成衬底10的一个表面上。在通道形成衬底10中,由多个分隔壁11分隔开的压力产生腔12通过在通道形成衬底10的另一个表面上进行各向异性蚀刻来形成。连通部分13形成在成排布置的压力产生腔12的纵向外侧,连通部分13与设置在储液室形成板30(稍后描述)中的储液室部分32连通构成储液室100,用作各个压力产生腔12所用的共用液体腔。连通部分13还通过液体供应通路14与每个压力产生腔12纵向的一个端部连通。通过粘接剂或热密封膜等将喷嘴板20固定到通道形成衬底10的开口表面上,在喷嘴板20中钻有喷嘴孔21。喷嘴孔21在与液体供应通路14相反的一侧上与各个压力产生腔12连通。喷嘴板20包含玻璃陶瓷、单晶硅衬底或不锈钢等,具有例如从0.01mm至1mm的厚度和例如在300℃或更低温度下从2.5至4.5×[10-6/℃]的线性膨胀系数。
如上所述,在通道形成衬底10的与开口表面相反的一侧上形成厚度例如约为1.0μm的弹性膜50。在弹性膜50上形成厚度例如约为0.4μm的绝缘膜55。此外,在绝缘膜55上以层叠的状态通过下述的过程形成厚度例如约为0.2μm的下电极膜60、厚度例如约为1.0μm的压电层70和厚度例如约为0.05μm的上电极膜80,以形成压电元件300。压电元件300指的是包括下电极膜60、压电层70和上电极膜80的部分。一般而言,压电元件300的一个电极用作公共电极,通过图案化构成的其它电极和压电层70用于各个压力产生腔12。由已经被图案化的电极和压电层70中任一个组成、并且在对两个电极施加电压时产生压电形变的部分被称为压电活性部分。在本实施例中,下电极膜60用作这些压电元件300的公共电极,而上电极膜80用作各个压电元件300的各自的电极。但是,将它们的用法颠倒对于驱动电路或引线的便利性来说没有任何损害。在任一种情况下,对于每个压力产生腔都会形成压电活性部分。这里,压电元件300和通过压电元件300的驱动而发生移动的振动板一起被称作压电致动器。
在前述示例中,压电元件300的下电极膜60与弹性膜50和绝缘膜55作为振动板。引线电极90作为引出引线从压电元件300的上电极膜80在纵向上的端部附近的位置延伸到通道形成衬底10的压力产生腔12的端部附近的位置。引线电极90包含例如金(Au)或设置在金的下侧的粘附金属,例如钛-钨(TiW)。引线电极90由结合引线120穿过通孔33电连接至驱动IC110(以下会描述)。
储液室形成板30具有构成储液室100的至少一部分的储液室部分32,储液室形成板30经由粘结剂35结合到通道形成衬底10上,上述的压电元件300已经形成在通道形成衬底10上。在本实施例中,储液室部分32形成为在储液室形成板30的厚度方向上穿透储液室形成板30,并在压力产生腔12的宽度方向上延伸。如前所述,储液室部分32与通道形成衬底10的连通部分13连通,以构成储液室100,储液室100作为用于各个压力产生腔12的共用液体腔。
在储液室形成板30的与压电元件300相对的区域中,设置压电元件保持部分31,压电元件保持部分31具有不会阻碍压电元件300运动的空间。在储液室形成板30的界定于储液室部分32和压电元件保持部分31之间的区域中,设置通孔33,通孔33在储液室形成板30的厚度方向上穿透储液室形成板30。引线电极90是从各个压电元件300引出的引出引线,具有暴露在通孔33中的端部和邻近区域。用于这种构造的储液室形成板30的材料例如是玻璃、陶瓷材料、金属或树脂。优选地,储液室形成板30由具有与通道形成衬底10大致相同的热膨胀系数的材料形成。在本实施例中,储液室形成板30由单晶硅衬底形成,其与用于通道形成衬底10的材料相同。
用于驱动各个压电元件300的驱动IC110设置在储液室形成板30上。结合引线120的一端连接至驱动IC110的各个接线端部分111。结合引线120的另一端通过引线结合方法(以下会详细描述)连接至引线电极90的接线端部分90a,接线端部分90a是结合片。结合引线120的引线直径优选为20至30um,在本实施例中,使用的结合引线120具有例如25um的引线直径并包含金(Au)。
以下将说明用于将结合引线120连接到引线电极90的接线端部分90a的连接结构(结合结构)和引线结合方法,接线端部分90a是结合片,其中至少连接至结合引线120的表面由金形成。图3是示出引线结合中的连接结构的立体图。图4(a)和4(b)是液体喷射头的主要部分的剖视图,示出引线结合方法。图5(a)和5(b)是说明引线结合方法的步骤的视图。图6(a)和6(b)是结合引线120的连接位置的外部视图。
如图3所示,结合部位200是引线直径为r(例如25um)的结合引线120的一端连接至引线电极90的接线端部分90a的区域,结合部位200由前端侧上的第一连接部位201(用于临时结合)和与第一连接部位201连续的第二连接部位202(用于主结合)组成。结合引线120中连接至接线端部分90a的结合部位200是通过引线结合方法(其细节稍后描述)形成的。
结合部位200的第二连接部位202是通过施加比用于第一连接部位201的超声波幅度更大的超声波来形成的,第二连接部位202比第一连接部位201具有更大的抗拉强度。第二连接部位202的接合点宽度H2(第二连接部位202的最大宽度)被制成大于第一连接部位201的接合点宽度H1(第一连接部位201的最大宽度)。此外,如图5B所示,第二连接部位202的厚度t2被制成小于第一连接部位201的厚度t1。
由此,可以增加结合引线120和接线端部分90a之间的结合强度。此外,可以将结合引线120和接线端部分90a牢固地结合在一起而不会容易地彼此剥离。
因为可以增加结合引线120连接至作为结合片的接线端部分90a的结合强度,所以可以缩窄结合部位200的宽度,可以缩窄接线端部分90a的宽度,并可以减小接线端部分90a和邻近的接线端部分90a之间的间距。由此,可以使引线电极90的宽度和间距变小,使得可以以高密度布置引线电极90,并可以减小液体喷射头的尺寸。
如图1和2A、2B所示,柔性板40结合到储液室形成板30上。在柔性板40的与储液室100相对的区域中,除了液体引入端口44以外的区域限定了可变形部分43,可变形部分43的厚度较薄,储液室100用可变形部分43密封。可变形部分43将柔量传递至储液室100内部。
以下将参考图4(a)、4(b)至图6(a)、6(b)描述通过结合引线120将驱动IC110的接线端部分111连接至引线电极90的接线端部分90a(作为结合片)的引线结合方法。
如图4(a)所示,穿过构成引线结合装置的毛细管130插入结合引线120而将其保持,并通过球焊使结合引线120连接至驱动IC110的接线端部分111。通过球焊的连接方法是通过熔化结合引线120的前端以形成球、并将此球压靠驱动IC110的接线端部分111来进行的。
然后,如图4(b)所示,结合引线120被连接至引线电极90的作为结合片的接线端部分90a。此时,通过用毛细管130将结合引线120压靠引线电极90的接线端部分90a,同时加热结合引线120并施加超声波来连接结合引线120。
就是说,如图5(a)和6(b)所示,通过加热结合引线120并施加超声波,将毛细管130压靠接线端部分90a以将结合引线120连接至接线端部分90a(临时结合),由此形成第一连接部位201。
然后,如图5(b)和6(b)所示,拉出结合引线120。通过加热结合引线120并施加超声波,空的毛细管130(工具)在与第一连接部位201连续的部位处压靠接线端部分90a,以将结合引线120连接至接线端部分90a(主结合),由此形成第二连接部位202。
根据上述实施例,在形成第一连接部位201之后由于接线引线120的抽出已经变空的毛细管130被用作挤压形成第二连接部位202的工具。因此,可以通过使用单个毛细管130形成第一连接部位201和第二连接部位202。在形成第二连接部位202时,还可以使用具有足以进行主结合的形状和尺寸的专用工具,而不需要将用于主结合的工具限制为空的毛细管130。
与第一连接部位201相比,形成第二连接部位202时施加了较大幅度的超声波。就是说,当形成第一连接部位201时,通过施加较低幅度的超声波以毛细管130进行挤压,以进行临时结合。当形成第二连接部位202时,通过施加较高幅度的超声波以毛细管130进行挤压,以进行主结合。由此,以比引线结合的通常温度低的温度进行引线结合仍然能够增加结合引线120和接线端部分90a之间的结合强度,因为第二结合部位是通过施加较高幅度的超声波形成的。
图7示出超声波的幅度与抗拉强度(以g表示的拉拔强度)和断裂发生率(%)之间的关系。如图7所示,随着超声波强度的增加,拉拔强度增加,断裂发生率也上升。
例如在毛细管130的直径为66mm而结合引线120的直径为20mm的情况下,可以确保2.0g至4.0g级别的足够的抗拉强度,并可以保持大约0%的断裂发生率,直到幅度达到1.5um级别。例如在毛细管130的直径为86mm而结合引线120的直径为30mm的情况下,可以确保4.0g至8.0g级别的足够的抗拉强度,并可以保持大约0%的断裂发生率,直到幅度达到3.0um级别。
由此,由用于临时结合的第一连接部位201和用于主结合的第二连接部位202(其与第一连接部位201连续)组成的结合部位200,可以通过根据结合引线120的直径选择用于形成第一连接部位201的合适超声波幅度和用于形成第二连接部位202的合适超声波幅度来获得。在形成的结合部位200中,第二连接部位202具有高于第一连接部位201的抗拉强度,并且第二连接部位202的接合点宽度大于第一连接部位201的接合点宽度。此外,可以获得具有比第一连接部位201薄的第二连接部位202的结合部位200。
在本实施例中,驱动IC110的接线端部分111和引线电极90的接线端部分90a通过用上述引线结合方法连接的结合引线120电连接在一起。但是,上述的引线结合方法和用于结合引线的连接结构可以应用到通过液体喷射头的结合引线连接的所有电极。除了引线电极90的接线端部分90a的结合引线之外的示例是用于连接下电极膜60和驱动IC110的结合引线、和用于将引线电极的接线端部分(其形成在承载驱动IC110的储液室形成板30的表面上)连接至驱动IC110的接线端部分的结合引线,尽管这些结合引线都未示出。
本实施例说明了用在致动装置特别是液体喷射头上的引线结合方法和通过此方法形成的结合引线的连接结构。但是,本发明不限于它们,而是可以应用到使用结合引线的其它器件,例如半导体器件。
工业应用性
本发明可以应用于到与结合结构和引线结合方法相关的工业领域,所述结合结构包含与连接片相连的结合引线。
本发明可以用于使用装备有振动板和压电元件的致动装置的工业领域中。特别地,本发明可以用于使用液体喷射头的工业领域中,在该液体喷射头中,与用于喷射墨滴的喷嘴孔连通的压力产生腔的一部分由振动板构成,压电元件形成于振动板的表面上,并且通过压电元件的移动喷射墨滴。
Claims (13)
1.一种结合结构,包括:
结合引线;
结合片;和
结合部位,所述结合引线在所述结合部位处连接至所述结合片,并且
其中,所述结合部位由前端侧上的第一连接部位和与所述第一连接部位连续的第二连接部位组成。
2.根据权利要求1所述的结合结构,其中,与所述第一连接部位相比,所述第二连接部位具有更高的抗拉强度。
3.根据权利要求1或2所述的结合结构,其中,与所述第一连接部位相比,所述第二连接部位是通过施加更大幅度的超声波至所述第二连接部位来连接的。
4.根据权利要求1至3中任一项所述的结合结构,其中,所述第二连接部位的接合点宽度大于所述第一连接部位的接合点宽度。
5.根据权利要求1至4中任一项所述的结合结构,其中,所述第二连接部位的厚度小于所述第一连接部位的厚度。
6.根据权利要求1至5中任一项所述的结合结构,其中,至少所述结合片的连接至所述结合引线的表面包含金。
7.一种用于将结合引线连接至结合片的引线结合方法,所述方法包括下列步骤:
将毛细管压靠所述结合片,同时加热所述结合引线并施加超声波,以连接所述结合引线至所述结合片,由此形成第一连接部位;以及
在与所述第一连接部位连续的部位处将工具压靠所述结合片,同时加热所述结合引线并施加超声波,以连接所述结合引线至所述结合片,由此形成第二连接部位。
8.根据权利要求7所述的引线结合方法,还包括在所述第二连接部位处施加比所述第一连接部位处更大幅度的超声波。
9.根据权利要求7或8所述的引线结合方法,其中,所述工具是所述毛细管,所述毛细管中没有插入所述结合引线。
10.一种致动装置,包括:
设置在衬底的一个表面上的振动板;
多个压电元件,每个所述压电元件由经由所述振动板设置的下电极、压电层和上电极组成;和
电连接至所述压电元件的结合片,所述结合片具有连接至所述结合片的结合引线,并且
其中,所述结合引线通过权利要求1至5中任一项所述的结合结构连接至所述结合片。
11.根据权利要求10所述的致动装置,还包括从所述压电元件引出的引出引线,其中,所述引出引线的前端部限定所述结合片。
12.根据权利要求10或11所述的致动装置,其中,所述结合引线中的每个具有连接至用于驱动所述压电元件的驱动IC的接线端部分的一端,并具有连接至所述结合片的另一端。
13.一种液体喷射头,包括:
根据权利要求10至12中任一项所述的致动装置;和
通道形成衬底,与喷嘴孔连通的压力产生腔形成于所述通道形成衬底中,所述致动装置设置在所述通道形成衬底的表面上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP228877/2004 | 2004-08-05 | ||
JP2004228877 | 2004-08-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1934691A true CN1934691A (zh) | 2007-03-21 |
Family
ID=35756451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005800090736A Pending CN1934691A (zh) | 2004-08-05 | 2005-07-26 | 结合结构、引线结合方法、致动装置和液体喷射头 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060027623A1 (zh) |
JP (1) | JP4435167B2 (zh) |
CN (1) | CN1934691A (zh) |
WO (1) | WO2006013751A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104471693A (zh) * | 2012-07-17 | 2015-03-25 | 库利克和索夫工业公司 | 形成导线互连结构的方法 |
CN105390423A (zh) * | 2015-11-10 | 2016-03-09 | 长春理工大学 | 一种液体毛细键合装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008307710A (ja) * | 2007-06-12 | 2008-12-25 | Canon Inc | インクジェット記録ヘッド、インクジェット記録ヘッドの製造方法およびインクジェット記録ヘッドの実装ツール |
KR20090084527A (ko) * | 2008-02-01 | 2009-08-05 | 삼성전자주식회사 | 이미지 센서 모듈, 이의 제조 방법, 이를 포함하는 카메라모듈 및 카메라 모듈을 포함하는 전자 제품 |
US20100118091A1 (en) * | 2008-11-13 | 2010-05-13 | Girish Shivaji Patil | Enhanced traces of flexible tab circuit for attachment on bond pads of inkjet printhead chip in printhead cartridge assembly |
US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
TWI452640B (zh) * | 2009-02-09 | 2014-09-11 | Advanced Semiconductor Eng | 半導體封裝構造及其封裝方法 |
DE102010038130B4 (de) * | 2010-10-12 | 2012-04-19 | Technische Universität Berlin | Dickdraht-Bondanordnung und Verfahren zum Herstellen |
CN102456825A (zh) * | 2010-10-25 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
US9682589B2 (en) * | 2015-01-19 | 2017-06-20 | Xerox Corporation | Part design geometry for stenciling epoxies through orifices in film adhesive |
CN112349611A (zh) * | 2020-11-05 | 2021-02-09 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种低弧引线键合强度评价方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148432A (ja) * | 1982-02-26 | 1983-09-03 | Shinkawa Ltd | ワイヤボンデイング方法 |
JPS61208837A (ja) * | 1985-03-14 | 1986-09-17 | Toshiba Corp | 金属線の接続方法 |
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
JP2000277568A (ja) * | 1999-01-19 | 2000-10-06 | Murata Mfg Co Ltd | 電子部品の実装方法及び実装構造 |
JP3580363B2 (ja) * | 2000-03-24 | 2004-10-20 | セイコーエプソン株式会社 | インクジェット式記録ヘッド及びその製造方法 |
JP2002319596A (ja) * | 2001-04-20 | 2002-10-31 | Denso Corp | ワイヤボンディングを用いた接続方法および接続構造 |
-
2005
- 2005-07-26 CN CNA2005800090736A patent/CN1934691A/zh active Pending
- 2005-07-26 WO PCT/JP2005/013631 patent/WO2006013751A1/ja active Application Filing
- 2005-07-26 JP JP2006531399A patent/JP4435167B2/ja not_active Expired - Fee Related
- 2005-08-03 US US11/195,866 patent/US20060027623A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104471693A (zh) * | 2012-07-17 | 2015-03-25 | 库利克和索夫工业公司 | 形成导线互连结构的方法 |
CN105390423A (zh) * | 2015-11-10 | 2016-03-09 | 长春理工大学 | 一种液体毛细键合装置 |
CN105390423B (zh) * | 2015-11-10 | 2018-01-19 | 长春理工大学 | 一种液体毛细键合装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060027623A1 (en) | 2006-02-09 |
JPWO2006013751A1 (ja) | 2008-05-01 |
WO2006013751A1 (ja) | 2006-02-09 |
JP4435167B2 (ja) | 2010-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1934691A (zh) | 结合结构、引线结合方法、致动装置和液体喷射头 | |
CN1230884C (zh) | 引线键合方法以及凸点形成方法和凸点 | |
CN101765926B (zh) | 层叠型压电元件、具有其的喷射装置及燃料喷射系统 | |
CN1855567A (zh) | 叠层型压电元件 | |
CN2719571Y (zh) | 液体喷头及液体喷射装置 | |
CN1531467A (zh) | 用于将声学元件装接到集成电路上的系统 | |
CN101051669A (zh) | 驱动装置、液体喷头及液体喷射装置 | |
EP1900680A3 (en) | Cap wafer having electrodes | |
CN1459855A (zh) | 半导体器件及其制造方法 | |
TW200642858A (en) | Mounted structure, liquid droplet ejection head, liquid droplet ejection apparatus and manufacturing method | |
US9498950B2 (en) | Retaining structure of wiring member, liquid discharge head, liquid discharge device, and liquid discharge apparatus | |
CN1721182A (zh) | 压电机构及其制造方法、喷墨头以及喷墨打印机 | |
CN1445090A (zh) | 压电致动器、包含它的液体喷头、压电元件及其制造方法 | |
US10828896B1 (en) | Induced electrohydrodynamic jet printing apparatus | |
CN1842252A (zh) | 制造结合基板的方法和用于结合基板的基板 | |
EP1800867A3 (en) | Method of manufacturing ink-jet head | |
CN1612808A (zh) | 压电致动器和具有该压电致动器的液体喷射头 | |
JP4899678B2 (ja) | 液体移送装置、アクチュエータユニット及び液体移送装置の製造方法 | |
JP5008844B2 (ja) | 液滴吐出ヘッド、インクジェット記録装置、及び液滴吐出ヘッドの製造方法 | |
CN1195423A (zh) | 电子组件结构体 | |
JP2001244514A (ja) | 積層型圧電アクチュエータおよびこれを用いた噴射装置 | |
CN1193418C (zh) | 半导体装置及其制造方法、电路衬底以及电子仪器 | |
JP4539284B2 (ja) | 発光素子実装構造体および発光素子実装構造体の製造方法 | |
CN1597324A (zh) | 压电喷墨头 | |
CN1751885A (zh) | 键合结构、致动器设备和液体喷头 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |