CN104471693A - 形成导线互连结构的方法 - Google Patents
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Abstract
一种形成一导线互连结构的方法包含以下步骤:(a)利用一导线接合工具形成一导线接合于一基板上之一接合位置处;(b)使与该导线接合接续之一段导线延伸至另一位置;(c)利用该导线接合工具将该段导线之一部分压抵于该另一位置上;(d)将该导线接合工具、以及该段导线之该被压抵部分移动至该导线接合上方之一位置;以及(e)使该段导线在该被压抵部分处自一导线供应源分离,藉此提供接合至该接合位置之一导线互连结构。
Description
相关申请之交叉参考
本申请案主张于2012年7月17日提出申请之美国临时申请案第61/672,449号之优先权,该美国临时申请案之内容以引用方式并入本文中。
技术领域
本发明涉及半导体封装,更具体而言,涉及形成导线互连结构的改进的方法。
背景技术
导线接合器(即导线接合机器)可于将要被电性互连的各个位置之间形成导线回路。实例性导线接合技术包含焊球接合以及楔形接合。焊球接合应用中的步骤包含:将无空气焊球接合至第一接合位置(例如半导体晶片的晶片焊垫);使与该被接合的无空气焊球接续的一段导线延伸至第二接合位置(例如引线框架的引线);以及将该导线接合至第二接合位置,藉此于该第一接合位置与该第二接合位置之间形成一导线回路。在(a)导线回路的末端与(b)接合位点(例如晶片焊垫、引线等)之间形成接合时,可使用不同类型的接合能量,包括例如超声波能量、热超声波能量、热压缩能量、以及其他能量。
导线接合机器亦已用于形成具有自由端的导线接点及互连达数年之久。举例而言,授予Khandros之美国专利第5,476,211号揭露了利用焊球接合技术形成此种导电接点。然而,形成此种导线接点及互连之传统技术中,存在着缺少一致性(例如高度一致性、形状一致性等)以及不理想之导线接点及互连之形状之缺点。
因此,期望提供形成导线互连结构的改进的方法。
发明内容
根据本发明的一实例性实施例,一种形成导线互连结构的方法包含以下步骤:(a)利用导线接合工具于基板上的接合位置处形成导线接合;(b)使与该导线接合接续的一段导线延伸至另一位置;(c)利用该导线接合工具将该段导线的一部分压抵于该另一位置上;(d)将该导线接合工具以及该段导线的该被压抵部分移动至该导线接合上方的位置;以及(e)使该段导线在该被压抵部分处从导线供应源分离(例如伸展及撕扯),藉此提供接合至该接合位置的导线互连结构。
根据本发明的另一实例性实施例,提供一种形成导线互连结构的方法,该方法包含以下步骤:(a)利用导线接合工具于基板上的接合位置处形成焊球接合;(b)使与该焊球接合接续的一段导线延伸至另一位置;(c)利用该导线接合工具将该段导线的一部分压抵于该另一位置上,以局部地切割该段导线的一部分;(d)将该导线接合工具以及该段导线的该局部切割部分移动至该焊球接合上方的位置;(e)使额外一段导线从该导线接合工具延伸而出,该段额外导线并延伸于该段导线的该局部切割部分上方;以及(f)使该段导线在该局部分切割部处从导线供应源分离,藉此提供接合至该接合位置的导线互连结构,该导线互连结构大致上垂直地延伸于该焊球接合的上方。
附图说明
结合附图阅读以下详细说明将最佳地理解本发明。须强调者,根据惯例,附图之各种特征并未按比例绘制。相反,为清晰起见,各种特征之尺寸可随意放大或缩小。附图包括以下图式:
图1A至1I系为侧视方块图,其例示根据本发明一实例性实施例之垂直导线互连的形成;以及
图2系为侧视方块图,其例示根据本发明另一实例性实施例之垂直导线互连于一基板上的形成。
具体实施方式
如本文中所用之术语“互连结构”或“导线互连结构”旨在指可用于提供任何类型的电互连(例如,如在用于测试的接点中的临时互连、如在半导体封装互连中的永久互连、等等)的导电结构。
图1A-1I例示根据本发明的实例性实施例的一种形成一或多个导线互连结构的方法。如图1A所示,无空气焊球106位于接合工具104(例如导线接合工具104)的尖端处,其中导线110向上延伸贯穿导线接合工具104中的孔(或类似“孔”的物)并贯穿打开的导线夹108。导线接合工具104与导线夹108由一共用的接合头组件(图未示出)承载,且藉此一起移动(例如沿一垂直Z轴)。如熟习此项技术者将理解,无空气焊球106利用一电子熄火装置或类似装置(图未示出)形成于导线110的悬挂于接合工具104的尖端下方的一末端上。应理解,图1A-1I之简化图式中省去了多个元件(例如用于载送接合工具104的超声波换能器等等)。
在形成无空气焊球106之后,向上拉动导线110(例如利用一真空控制张紧轮或类似装置),从而使无空气焊球106位于接合工具104的尖端处,如图1A所示。导线接合工具104及导线夹108位于基板100上方。如熟习此项技术者将理解,基板100可以是能够与导线互连接合的任何类型的元件。实例性基板包含引线框架、半导体晶片、球形栅格阵列(ball grid array;BGA)封装体元件、翻转式晶片(flip chip)元件、封装体迭层(package-on-package;POP)元件等等。接合位置102可以是配置以接纳一导线互连的任何类型的结构。举例而言,若基板100为一半导体晶片,则接合位置102可以是一晶片焊垫。其他实例性接合位置包含引线、电路迹线等。
如图1A所示,接着,接合工具104及导线夹108沿着向下Z方向之各箭头而朝着接合位置102向下移动(例如连同接合头组件的其他元件)。如图1B所示,使接合工具104及导线夹108降低,则无空气焊球106接触接合位置102,并利用例如接合力、超声波能量及热量(例如位于基板100下方的加热块,图未示出),无空气焊球将形成焊球接合。如图1C-1D所示,此时已形成焊球接合112,且使接合工具104及导线夹108(处于打开位置)向上移动,并同时使一段导线114自焊球接合112朝另一位置116延伸。该段导线114与焊球接合112接续。根据需要,可在一单一步骤、或复数个步骤及相关联动作中延伸该段导线114。用于延伸该段导线114的动作可类似于用于使一导线回路自一第一接合位置延伸至一第二接合位置之传统回路形成动作;然而,导线114的邻近接合工具104的尖端120的部分并非以超声波方式接合/焊接至另一位置116。相反,将一预定量的接合力(例如可能在不存在超声波能量之条件下)施加至导线接合工具104的尖端120,以将导线114的该部分压抵于该另一位置116(例如参见图1D)上。在另一实例中,代替施加一预定量的接合力,将导线接合工具104移动至一预定位置,从而施加一接合力以将导线114的该部分压抵于该另一位置116上。无论以一力控制模式、一位置控制模式或其他操作模式而施加接合力,此种压抵可使导线114的位于接合工具104的尖端侧120a下方的被压抵部分118“变形”或被局部切割,例如被显示为变形后/被切割后之导线部分118。如上文所述,变形后/被切割后”导线部分118尚未接合/焊接至另一位置116。相反,可在变形后/被切割后的导线部分118的形成期间将变形后/被切割后的导线部分118临时黏附至另一位置116。
如图1E所示,导线接合工具104及导线夹108(例如处于一闭合位置,但可根据需要而打开)已被抬升至焊球接合112上方的一位置,其中具有变形后/被切割后之导线部分118的导线110与焊球接合112接续。在传统导线回路形成术语中,此一位置可被视为一回路顶部(topof loop;TOL)位置。
在图1F中,导线夹108已被移动至一打开位置,且导线接合工具104及打开的导线夹108如沿着向上Z方向的各箭头而正被抬起,以将导线114'的另一部分(例如尾部一段导线114')从导线接合工具尖端120松开(导线接合工具尖端120与变形后/被切割后之导线部分118接续)。举例来说,导线部分114'可成为用于后续无空气焊球的导线尾部。如图1E-1F中接合工具104的尖端120下方的圆圈的放大部分中所更清楚显示地,导线110的被压抵导线部分118可以是导线110中的局部切口,并将导线部分114,114'分开。如图1G所示,导线夹108在导线110的上部上闭合,且如图1H所示,接着,导线接合工具104及导线夹108如沿着向上Z方向的各箭头而被抬起,以使导线110于邻近变形后/被切割后的导线部分118处而分离,进而形成导线互连结构122。导线接合工具104的尖端下方的圆圈的放大部分更清楚地显示导线互连结构122(自导线部分114'分离)可具有一锥形或锋利的上端124。图1I例示具有其他导线互连结构122的基板100,该等其他导线互连结构藉由重复上述方法而于另外的接合位置102上形成。如图所示,导线互连结构122可为垂直直立的、或大致上垂直直立的。
如上文结合图1D所述,导线114的一部分压抵于另一位置116上。在图1A-1H之实施例中,另一位置116可为基板100的一部分(例如基板100的一表面部分等)。然而,熟习此项技术者可理解,可使用任何位置作为另一位置116。举例而言,如图2所示并根据本发明的另一实施例,导线部分118的压抵(对于欲于基板100上形成的导线互连结构122的某些或全部)可发生于除基板100外的位置处(例如,于另一基板或结构上),例如于图2所示的另一位置/基板200(其并非(直接地)为基板100的一部分)处。
根据本发明所形成的导线互连结构可在高度及所产生的导线尾部长度上具有改良之一致性,且在生产上具有提高的效率(例如每小时所生产之单位提高)。
根据本发明所形成之导线互连结构可用作例如探针卡板中之接点结构、堆迭晶片应用中晶片间之互连、翻转式晶片应用中之互连、硅通孔(through silicon via)或模具通孔(through mold via)应用中之互连、封装体迭层(package on package;POP)应用中封装体间之互连、以及其他结构。
尽管已以一预定顺序相对于某些实例性方法步骤主要地说明了本发明,但本发明并不仅限于此。在本发明之范围内,可重新安排或省略该等步骤其中之某些步骤,或者可添加另外之步骤。
尽管在本文中参照具体实施例例示并说明了本发明,然而本发明并非旨在限于所示之细节。相反,在申请专利范围之等效内容之范围内且在不背离本发明之条件下,可在该等细节上作出各种修改。
Claims (25)
1.一种形成导线互连结构的方法,该方法包含以下步骤:
(a)利用导线接合工具于基板上的接合位置处形成导线接合;
(b)使与该导线接合接续的一段导线延伸至另一位置;
(c)利用所述导线接合工具将该段接续的导线的一部分压抵于该另一位置上;
(d)将所述导线接合工具以及该段导线的所述被压抵部分移动至该导线接合上方的位置;以及
(e)使该段接续的导线在该被压抵部分处从导线供应源分离,由此提供接合至该接合位置的导线互连结构。
2.根据权利要求1的方法,其中该压抵步骤局部地切割该段导线的所述部分,以形成该段接续的导线的一局部切割部分。
3.根据权利要求1的方法,还包括如下步骤:形成无空气焊球,以用于在步骤(a)中形成该导线接合。
4.根据权利要求3的方法,其中在形成该导线接合时使用接合力及超声波能量。
5.根据权利要求1的方法,其中在该压抵步骤(c)中使用接合力。
6.根据权利要求5的方法,其中在该压抵步骤(c)中未与该接合力一起使用超声波能量。
7.根据权利要求1的方法,还包括以下步骤:
(d1)在步骤(d)与步骤(e)之间,使额外的一段导线从该接合工具延伸而出,该段额外的导线延伸于该段接续的导线的该被压抵部分上方。
8.根据权利要求7的方法,还包括以下步骤:在步骤(d1)之后且在步骤(e)之前,使抵靠导线的上部的导线夹闭合。
9.根据权利要求8的方法,其中在步骤(e)中的分离包含:在使该段接续的导线在该被压抵部分处从导线供应源分离时,抬起该闭合的导线夹及所述导线接合工具。
10.根据权利要求1的方法,其中:重复步骤(a)至步骤(e),以形成多个导线互连结构。
11.根据权利要求1的方法,还包括以下步骤:利用该导线互连结构使该基板电连接至另一相邻基板。
12.根据权利要求1的方法,其中该另一位置位于该基板上。
13.根据权利要求1的方法,其中该另一位置不位于该基板上。
14.根据权利要求1的方法,其中该导线互连结构大致垂直地延伸于该导线接合的上方。
15.根据权利要求1的方法,还包括以下步骤:在步骤(d)之后且在步骤(e)之前,使抵靠导线的上部的导线夹闭合。
16.一种形成导线互连结构的方法,该方法包含以下步骤:
(a)利用导线接合工具于基板上的接合位置处形成焊球接合;
(b)使与该焊球接合接续的一段导线延伸至另一位置;
(c)利用该导线接合工具将该段导线的一部分压抵于该另一位置上,以局部地切割该段导线的一部分;
(d)将该导线接合工具以及该段导线的该局部切割部分移动至该焊球接合上方的位置;
(e)使额外的一段导线从该导线接合工具延伸而出,该段额外的导线延伸于该段导线的该局部切割部分上方;以及
(f)使该段导线在该局部切割部分处从导线供应源分离,由此提供接合至该接合位置的导线互连结构,该导线互连结构大致垂直地延伸于该焊球接合的上方。
17.根据权利要求16的方法,还包括如下步骤:形成无空气焊球,其用于在步骤(a)中形成该焊球接合。
18.根据权利要求16的方法,其中在形成该焊球接合时使用接合力及超声波能量。
19.根据权利要求16的方法,其中在该压抵步骤(c)中使用接合力。
20.根据权利要求19的方法,其中在该压抵步骤(c)中未与该接合力一起使用超声波能量。
21.根据权利要求16的方法,还包括以下步骤:在步骤(e)之后且在步骤(f)之前,使抵靠导线的上部的导线夹闭合。
22.根据权利要求16的方法,其中重复步骤(a)至步骤(f),以形成多个导线互连结构。
23.根据权利要求16的方法,还包括以下步骤:利用该导线互连结构使该基板电连接至另一相邻基板。
24.根据权利要求16的方法,其中该另一位置位于该基板上。
25.根据权利要求16的方法,其中该另一位置不位于该基板上。
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Publication number | Publication date |
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US9865560B2 (en) | 2018-01-09 |
WO2014014643A1 (en) | 2014-01-23 |
TWI531015B (zh) | 2016-04-21 |
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CN104471693B (zh) | 2018-05-08 |
US20170345787A1 (en) | 2017-11-30 |
US9502371B2 (en) | 2016-11-22 |
US20150132888A1 (en) | 2015-05-14 |
KR20150036074A (ko) | 2015-04-07 |
US20170040280A1 (en) | 2017-02-09 |
KR102094563B1 (ko) | 2020-03-27 |
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US10153247B2 (en) | 2018-12-11 |
TW201405683A (zh) | 2014-02-01 |
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