TWI531015B - 形成導線互連結構的方法 - Google Patents

形成導線互連結構的方法 Download PDF

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TWI531015B
TWI531015B TW102125018A TW102125018A TWI531015B TW I531015 B TWI531015 B TW I531015B TW 102125018 A TW102125018 A TW 102125018A TW 102125018 A TW102125018 A TW 102125018A TW I531015 B TWI531015 B TW I531015B
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wire
solder ball
substrate
forming
bonding
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TW102125018A
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TW201405683A (zh
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湯瑪斯Ｊ 科洛西莫
約翰Ｗ 布倫納
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庫利克和索夫工業公司
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Description

形成導線互連結構的方法 【相關申請案之交叉參考】
本申請案主張於2012年7月17日提出申請之美國臨時申請案第61/672,449號之優先權，該美國臨時申請案之內容以引用方式併入本文中。
本發明係關於半導體封裝，更具體而言，係關於改良後之形成導線互連結構的方法。
導線接合器(即導線接合機器)可於將要被電性互連之各個位置之間形成導線迴路。實例性導線接合技術包含焊球接合以及楔形接合。焊球接合應用中之步驟包含：將一無空氣焊球接合至一第一接合位置(例如一半導體晶粒之一晶粒焊墊)；使與該被接合之無空氣焊球接續之一段導線延伸至一第二接合位置(例如一引線框架之一引線)；以及將該導線接合至第二接合位置，藉此於該第一接合位置與該第二接合位置之間形成一導線迴路。在(a)導線迴路之末端與(b)接合位點(例如晶粒焊墊、引線等)之間形成接合時，可使用不同類型之接合能量，包括例如超音波能量、熱超音波能量、熱壓縮能量、以及其他能量。
導線接合機器亦已用於形成具有一自由端之導線接點及互 連達數年之久。舉例而言，授予Khandros之美國專利第5,476,211號揭露了利用焊球接合技術形成此種導電接點。然而，形成此種導線接點及互連之傳統技術中，存在著缺少一致性(例如高度一致性、形狀一致性等)以及不理想之導線接點及互連之形狀之缺點。
因此，期望提供改良後之形成導線互連結構的方法。
根據本發明之一實例性實施例，一種形成一導線互連結構的方法包含以下步驟：(a)利用一導線接合工具於一基板上之一接合位置處形成一導線接合；(b)使與該導線接合接續之一段導線延伸至另一位置；(c)利用該導線接合工具將該段導線之一部分壓抵於該另一位置上；(d)將該導線接合工具以及該段導線之該被壓抵部分移動至該導線接合上方之一位置；以及(e)使該段導線在該被壓抵部分處從一導線供應源分離(例如伸展及撕扯)，藉此提供接合至該接合位置之一導線互連結構。
根據本發明之另一實例性實施例，提供一種形成一導線互連結構的方法，該方法包含以下步驟：(a)利用一導線接合工具於一基板上之一接合位置處形成一焊球接合；(b)使與該焊球接合接續之一段導線延伸至另一位置；(c)利用該導線接合工具將該段導線之一部分壓抵於該另一位置上，以局部地切割該段導線之一部分；(d)將該導線接合工具以及該段導線之該局部切割部分移動至該焊球接合上方之一位置；(e)使額外一段導線從該導線接合工具延伸而出，該段額外導線並延伸於該段導線之該局部切割部分上方；以及(f)使該段導線在該局部分切割部處從一導線供應源分離，藉此提供接合至該接合位置之一導線互連結構，該導線互 連結構大致上垂直地延伸於該焊球接合之上方。
100‧‧‧基板
102‧‧‧接合位置
104‧‧‧導線接合工具
106‧‧‧無空氣焊球
108‧‧‧導線夾
110‧‧‧導線
112‧‧‧焊球接合
114‧‧‧導線/導線部分
114'‧‧‧導線/導線部分
116‧‧‧另一位置
118‧‧‧被壓抵部分/變形後/被切割後之導線部分
120‧‧‧導線接合工具之尖端
120a‧‧‧導線接合工具之尖端側
122‧‧‧導線互連結構
124‧‧‧錐形或鋒利之上端
200‧‧‧另一位置/基板
結合附圖閱讀以下詳細說明將最佳地理解本發明。須強調者，根據慣例，附圖之各種特徵並未按比例繪製。相反，為清晰起見，各種特徵之尺寸可隨意放大或縮小。附圖包括以下圖式：圖1A-1I係為側視方塊圖，其例示根據本發明一實例性實施例之垂直導線互連的形成；以及圖2係為側視方塊圖，其例示根據本發明另一實例性實施例之垂直導線互連於一基板上的形成。
如本文中所用之術語「互連結構」或「導線互連結構」旨在指可用於提供任何類型之電性互連(例如，如在用於測試之接點中之臨時互連、如在半導體封裝互連中之一永久互連、等等)之導電結構。
圖1A-1I例示根據本發明一實例性實施例之一種形成一或多個導線互連結構的方法。如圖1A所示，無空氣焊球106位於接合工具104(例如導線接合工具104)之尖端處，其中導線110向上延伸貫穿導線接合工具104中之一孔(或類似“孔”的物)並貫穿打開之導線夾108。導線接合工具104與導線夾108係由一共同之接合頭組件(圖未示出)載送，且藉此一起移動(例如沿一垂直Z軸)。如熟習此項技術者將理解，無空氣焊球106係利用一電子熄火裝置或類似裝置(圖未示出)形成於導線110之懸掛於接合工具104之尖端下方的一末端上。應理解，圖1A-1I之簡化圖式中省去了多個元件(例如用於載送接合工具104之一超音波換能器等等)。
在形成無空氣焊球106之後，向上拉動導線110(例如利用一真空控制張緊輪或類似裝置)，俾使無空氣焊球106位於接合工具104之尖端處，如圖1A所示。導線接合工具104及導線夾108位於基板100上方。如熟習此項技術者將理解，基板100可以是能夠與一導線互連接合之任何類型之元件。實例性基板包含引線框架、半導體晶粒、球形柵格陣列(ball grid array；BGA)封裝體元件、翻轉式晶片(flip chip)元件、封裝體疊層(package-on-package；POP)元件等等。接合位置102可以是配置以接納一導線互連之任何類型之結構。舉例而言，若基板100係為一半導體晶粒，則接合位置102可以是一晶粒焊墊。其他實例性接合位置包含引線、電路跡線等。
如圖1A所示，接著，接合工具104及導線夾108沿著向下Z方向之各箭頭而朝著接合位置102向下移動(例如連同接合頭組件之其他元件)。如圖1B所示，使接合工具104及導線夾108降低，則無空氣焊球106接觸接合位置102，並利用例如接合力、超音波能量及熱量(例如位於基板100下方之一加熱塊，圖未示出)，其將形成一焊球接合。如圖1C-1D所示，此時已形成焊球接合112，且使接合工具104及導線夾108(處於打開位置)向上移動，並同時使一段導線114自焊球接合112朝另一位置116延伸。該段導線114係與焊球接合112接續。根據需要，可在一單一步驟、或複數個步驟及相關聯動作中延伸該段導線114。用於延伸該段導線114之動作可類似於用於使一導線迴路自一第一接合位置延伸至一第二接合位置之傳統迴路形成動作；然而，導線114之鄰近接合工具104之尖端120的部分並非以超音波方式接合/焊接至另一位置116。相反，將一預定量之接合力(例如可能在不 存在超音波能量之條件下)施加至導線接合工具104之尖端120，以將導線114之該部分壓抵於該另一位置116(例如參見圖1D)上。在另一實例中，代替施加一預定量之接合力，將導線接合工具104移動至一預定位置，俾施加一接合力以將導線114之該部分壓抵於該另一位置116上。無論以一力控制模式、一位置控制模式或其他操作模式而施加接合力，此種壓抵可使導線114之位於接合工具104之尖端側120a下方的被壓抵部分118「變形」或被局部切割，例如被顯示為變形後/被切割後之導線部分118。如上文所述，變形後/被切割後之導線部分118尚未接合/焊接至另一位置116。相反，可在變形後/被切割後之導線部分118之形成期間將變形後/被切割後之導線部分118臨時黏附至另一位置116。
如圖1E所示，導線接合工具104及導線夾108(例如處於一閉合位置，但可根據需要而打開)已被抬升至焊球接合112上方之一位置，其中具有變形後/被切割後之導線部分118之導線110係與焊球接合112接續。在傳統導線迴路形成術語中，此一位置可被視為一迴路頂部(top of loop；TOL)位置。
在圖1F中，導線夾108已被移動至一打開位置，且導線接合工具104及打開之導線夾108如沿著向上Z方向之各箭頭而正被抬起，以將導線114'之另一部分(例如尾部一段導線114')從導線接合工具尖端120鬆開(導線接合工具尖端120與變形後/被切割後之導線部分118接續)。舉例來說，導線部分114'可成為一用於一後續無空氣焊球之導線尾部。如圖1E-1F中接合工具104之尖端120下方之圓圈的放大部分中所更清楚顯示地，導線110之被壓抵導線部分118可以是導線110中之一局部切口，並將導線部分114，114' 分開。如圖1G所示，導線夾108在導線110之一上部上閉合，且如圖1H所示，接著，導線接合工具104及導線夾108如沿著向上Z方向之各箭頭而被抬起，以使導線110於鄰近變形後/被切割後之導線部分118處而分離，進而形成導線互連結構122。導線接合工具104之尖端下方之圓圈的放大部分更清楚地顯示導線互連結構122(自導線部分114'分離)可具有一錐形或鋒利之上端124。圖1I例示具有其他導線互連結構122之基板100，該等其他導線互連結構係藉由重複上述方法而於另外之接合位置102上形成。如圖所示，導線互連結構122可係為垂直直立的、或大致上垂直直立的。
如上文結合圖1D所述，導線114之一部分壓抵於另一位置116上。在圖1A-1H之實施例中，另一位置116可係為基板100之一部分(例如基板100之一表面部分等)。然而，熟習此項技術者可理解，可使用任何位置作為另一位置116。舉例而言，如圖2所示並根據本發明之另一實施例，導線部分118之壓抵(對於欲於基板100上形成之導線互連結構122之某些或全部)可發生於除基板100外之一位置處(例如，於另一基板或結構上)，例如於圖2所示之另一位置/基板200(其並非(直接地)為基板100之一部分)處。
根據本發明所形成之導線互連結構可在高度及所產生之導線尾部長度上具有改良之一致性，且在生產上具有提高之效率(例如每小時所生產之單位提高)。
根據本發明所形成之導線互連結構可用作例如探針卡板中之接點結構、堆疊晶粒應用中晶粒間之互連、翻轉式晶片應用中之互連、矽通孔(through silicon via)或模具通孔(through mold via)應用中之互連、 封裝體疊層(package on package；POP)應用中封裝體間之互連、以及其他結構。
儘管已以一預定順序相對於某些實例性方法步驟主要地說明瞭本發明，但本發明並不僅限於此。在本發明之範圍內，可重新安排或省略該等步驟其中之某些步驟，或者可添加另外之步驟。
儘管在本文中參照具體實施例例示並說明瞭本發明，然而本發明並非旨在限於所示之細節。相反，在申請專利範圍之等效內容之範圍內且在不背離本發明之條件下，可在該等細節上作出各種修改。
100‧‧‧基板
102‧‧‧接合位置
104‧‧‧導線接合工具
106‧‧‧無空氣焊球
108‧‧‧導線夾
110‧‧‧導線
120‧‧‧導線接合工具之尖端

Claims (21)

  1. 一種形成一導線互連結構的方法，該方法包含以下步驟：(a)利用一導線接合工具於一基板上之一接合位置處形成一導線接合；(b)使與該導線接合接續之一段導線延伸至該基板或另一基板的另一位置；(c)利用該導線接合工具將該段接續之導線之一部分壓抵於該另一位置上；(d)將該導線接合工具以及該段導線之該被壓抵部分移動至該導線接合上方之一位置；以及(e)使該段接續之導線在該被壓抵部分處從一導線供應源分離，藉此提供接合至該接合位置之一導線互連結構。
  2. 根據申請專利範圍第1項的方法，其中該壓抵步驟局部地切割該段導線之該部分，以形成該段接續之導線之一局部切割部分。
  3. 根據申請專利範圍第1項的方法，更包含一如下步驟：形成一無空氣焊球，以用於在步驟(a)中形成該導線接合。
  4. 根據申請專利範圍第3項的方法，其中在形成該導線接合時使用一接合力及超音波能量。
  5. 根據申請專利範圍第1項的方法，其中在該壓抵步驟(c)中使用一接合力。
  6. 根據申請專利範圍第5項的方法，其中在該壓抵步驟(c)中未與該接合力一起使用超音波能量。
  7. 根據申請專利範圍第1項的方法，更包含以下步驟：(d1)：在步驟(d)與步驟(e)之間，使額外一段導線從該接合工具延伸而出，該段額外導線並延伸於該段接續之導線之該被壓抵部分上方。
  8. 根據申請專利範圍第7項的方法，更包含以下步驟：在步驟(d1)之後且在步驟(e)之前，使一抵靠導線之一上部之導線夾閉合。
  9. 根據申請專利範圍第8項的方法，其中在步驟(e)中的分離動作包含：在使該段接續之導線在該被壓抵部分處從一導線供應源分離時，抬起該閉合之導線夾及該導線接合工具。
  10. 根據申請專利範圍第1項的方法，其中：重複步驟(a)至步驟(e)，以形成複數個導線互連結構。
  11. 根據申請專利範圍第1項的方法，更包含以下步驟：利用該導線互連結構使該基板電性連接至另一相鄰基板。
  12. 根據申請專利範圍第1項的方法，其中該導線互連結構大致上垂直地延伸於該導線接合之上方。
  13. 根據申請專利範圍第1項的方法，更包含以下步驟：在步驟(d)之後且在步驟(e)之前，使一抵靠導線之一上部之導線夾閉合。
  14. 一種形成一導線互連結構的方法，該方法包含以下步驟：(a)利用一導線接合工具於一基板上之一接合位置處形成一焊球接合；(b)使與該焊球接合接續之一段導線延伸至該基板或另一基板的另一位置；(c)利用該導線接合工具將該段導線之一部分壓抵於該另一位置上，以局部地切割該段導線之一部分；(d)將該導線接合工具以及該段導線之該局部切割部分移動至該焊球接合上方之一位置；(e)使額外一段導線從該導線接合工具延伸而出，該段額外導線並延伸於該段導線之該局部切割部分上方；以及(f)使該段導線在該局部切割部分處從一導線供應源分離，藉此提供接合至該接合位置之一導線互連結構，該導線互連結構大致上垂直地延伸於該焊球接合之上方。
  15. 根據申請專利範圍第14項的方法，更包含一如下步驟：形成一無空氣焊球，其用於在步驟(a)中形成該焊球接合。
  16. 根據申請專利範圍第14項的方法，其中在形成該焊球接合時使用一接合力及超音波能量。
  17. 根據申請專利範圍第14項的方法，其中在該壓抵步驟(c)中使用一接合力。
  18. 根據申請專利範圍第17項的方法，其中在該壓抵步驟(c)中未與該接合力一起使用超音波能量。
  19. 根據申請專利範圍第14項的方法，更包含以下步驟：在步驟(e)之後且在步驟(f)之前，使一抵靠導線之一上部之導線夾閉合。
  20. 根據申請專利範圍第14項的方法，其中重複步驟(a)至步驟(f)，以形成複數個導線互連結構。
  21. 根據申請專利範圍第14項的方法，更包含以下步驟：利用該導線互連結構使該基板電性連接至另一相鄰基板。
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471693B (zh) * 2012-07-17 2018-05-08 库利克和索夫工业公司 形成导线互连结构的方法
US9870946B2 (en) 2013-12-31 2018-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level package structure and method of forming same
JP5686912B1 (ja) * 2014-02-20 2015-03-18 株式会社新川 バンプ形成方法、バンプ形成装置及び半導体装置の製造方法
JP2016535463A (ja) * 2014-10-03 2016-11-10 インテル コーポレイション 垂直コラムを有するオーバラップ形スタック化ダイパッケージ
US11145620B2 (en) * 2019-03-05 2021-10-12 Asm Technology Singapore Pte Ltd Formation of bonding wire vertical interconnects
SG10202003450RA (en) * 2019-05-02 2020-12-30 Asm Tech Singapore Pte Ltd Method for measuring the heights of wire interconnections
JP2022033633A (ja) 2020-08-17 2022-03-02 キオクシア株式会社 半導体装置
KR20220045684A (ko) 2020-10-06 2022-04-13 에스케이하이닉스 주식회사 지그재그 모양의 와이어를 포함하는 반도체 패키지
JP7471692B2 (ja) 2020-11-25 2024-04-22 株式会社新川 ワイヤ形成方法及び半導体装置の製造方法
US12057431B2 (en) * 2020-12-18 2024-08-06 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
CN116137929A (zh) 2021-09-16 2023-05-19 株式会社新川 接脚引线形成方法、以及打线结合装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213556A (en) * 1978-10-02 1980-07-22 General Motors Corporation Method and apparatus to detect automatic wire bonder failure
DE3536908A1 (de) * 1984-10-18 1986-04-24 Sanyo Electric Co., Ltd., Moriguchi, Osaka Induktivitaetselement und verfahren zur herstellung desselben
US5045975A (en) * 1987-05-21 1991-09-03 Cray Computer Corporation Three dimensionally interconnected module assembly
US5195237A (en) * 1987-05-21 1993-03-23 Cray Computer Corporation Flying leads for integrated circuits
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
US6295729B1 (en) * 1992-10-19 2001-10-02 International Business Machines Corporation Angled flying lead wire bonding process
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6836962B2 (en) * 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
US5421503A (en) * 1994-08-24 1995-06-06 Kulicke And Soffa Investments, Inc. Fine pitch capillary bonding tool
JPH09289276A (ja) 1996-04-23 1997-11-04 Hitachi Ltd リードフレームおよびそれを用いた半導体装置
DE69729759T2 (de) * 1996-10-01 2005-07-07 Matsushita Electric Industrial Co., Ltd., Kadoma Integrierte Schaltung oder Platine mit einer Höckerelektrode und Verfahren zu Ihrer Herstellung
JPH10135219A (ja) * 1996-10-29 1998-05-22 Taiyo Yuden Co Ltd バンプ形成方法
JPH10135220A (ja) * 1996-10-29 1998-05-22 Taiyo Yuden Co Ltd バンプ形成方法
JP3189115B2 (ja) * 1996-12-27 2001-07-16 株式会社新川 半導体装置及びワイヤボンディング方法
US7032311B2 (en) * 2002-06-25 2006-04-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
US7229906B2 (en) * 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
JP3854232B2 (ja) * 2003-02-17 2006-12-06 株式会社新川 バンプ形成方法及びワイヤボンディング方法
US6815836B2 (en) * 2003-03-24 2004-11-09 Texas Instruments Incorporated Wire bonding for thin semiconductor package
US7227095B2 (en) * 2003-08-06 2007-06-05 Micron Technology, Inc. Wire bonders and methods of wire-bonding
WO2006013751A1 (ja) * 2004-08-05 2006-02-09 Seiko Epson Corporation ボンディング構造、ワイヤボンディング方法、アクチュエータ装置、及び液体噴射ヘッド
JP4298665B2 (ja) * 2005-02-08 2009-07-22 株式会社新川 ワイヤボンディング方法
US7255538B2 (en) * 2005-02-09 2007-08-14 Hamilton Sundstrand Corporation Shrink-fit stress coupling for a shaft of differing materials
JP4744238B2 (ja) 2005-08-29 2011-08-10 田中電子工業株式会社 ワイヤの切断方法
JP4530975B2 (ja) * 2005-11-14 2010-08-25 株式会社新川 ワイヤボンディング方法
JP4509043B2 (ja) * 2006-02-14 2010-07-21 株式会社新川 スタッドバンプの形成方法
WO2008117488A1 (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co., Ltd 半導体装置およびその製造方法
CN104471693B (zh) * 2012-07-17 2018-05-08 库利克和索夫工业公司 形成导线互连结构的方法

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TW201405683A (zh) 2014-02-01
US9502371B2 (en) 2016-11-22
US9865560B2 (en) 2018-01-09
KR102094563B1 (ko) 2020-03-27
US20170345787A1 (en) 2017-11-30
US10153247B2 (en) 2018-12-11
KR20150036074A (ko) 2015-04-07
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JP2015533258A (ja) 2015-11-19
US20150132888A1 (en) 2015-05-14

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