CN102456825A - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

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CN102456825A
CN102456825A CN2010105197323A CN201010519732A CN102456825A CN 102456825 A CN102456825 A CN 102456825A CN 2010105197323 A CN2010105197323 A CN 2010105197323A CN 201010519732 A CN201010519732 A CN 201010519732A CN 102456825 A CN102456825 A CN 102456825A
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electrode
emitting diode
light
layer
lead
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类延恺
简克伟
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN2010105197323A priority Critical patent/CN102456825A/zh
Priority to US13/177,557 priority patent/US8431934B2/en
Publication of CN102456825A publication Critical patent/CN102456825A/zh
Priority to US13/854,143 priority patent/US8673667B2/en
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Abstract

本发明涉及一种发光二极管，包括基板、生长于基板上的缓冲层、生长于缓冲层上的发光层、生长于发光层上的欧姆接触层、生长于欧姆接触层上的电流扩散层、电极及导线，所述导线的一端与电极打线连接，所述导线与电极经打线形成连接结构，该连接结构与电极的接合面积大于等于电极面积的60％。增大导线与电极的连接诶面积能够使导线与电极连接更加紧密和牢固，使导线不易脱落。本发明还涉及一种发光二极管的制造方法。

Description

发光二极管及其制造方法
技术领域
本发明涉及一种发光二极管，还涉及一种发光二极管的制造方法。
背景技术
相比于传统的发光源，发光二极管(LightEmittingDiode，LED)具有重量轻、体积小、污染低、寿命长等优点，其作为一种新型的发光源，已经被越来越多地应用到各领域当中，如路灯、交通灯、信号灯、射灯及装饰灯等等。
发光二极管的核心为发光二极管芯片，在封装过程中，发光二极管芯片需与外界电源进行连接才能实现发光二极管的发光效果。现有技术一般采用打线方式将发光二极管芯片电连接于电路结构中，但是在实际生产中经常出现导线与发光二极管芯片脱落的现象，造成发光二极管良率不佳。
发明内容
有鉴于此，本发明旨在提供一种导线不易脱落的发光二极管结构。
一种发光二极管，包括基板、生长于基板上的缓冲层、生长于缓冲层上的发光层、生长于发光层上的欧姆接触层、生长于欧姆接触层上的电流扩散层、电极及导线，所述导线的一端与电极打线连接，所述导线与电极经打线形成连接结构，该连接结构与电极的接合面积大于等于电极面积的60％。
一种发光二极管制造方法，包括以下步骤：
形成基板并在基板上依次生长缓冲层、发光层、欧姆接触层和电流扩散层；
在发光二极管上形成电极；
将电极与导线打线连接，并且打线中形成的熔融金属与电极接合形成连接结构，该连接结构与电极的接合面积大于等于电极面积的60％。
增加导线与发光二极管芯片电极表面接合的面积使其大于等于60％，能够使导线与电极连接更加紧密和牢固，使导线不易脱落，提高发光二极管的良率。
下面参照附图，接合具体实施例对本发明作进一步的描述。
附图说明
图1为本发明一实施例的发光二极管芯片打线结构的示意图。
图2为图1所示的发光二极管芯片打线结构的俯视示意图。
图3为本发明另一实施例的发光二极管芯片打线结构的示意图。
主要元件符号说明
基板        10
缓冲层      20
发光层      30、90
N型半导体层 32
P型半导体层 34
外延结构    36
欧姆接触层  40
电流扩散层  50
透明导电层  60
电极        70
第一电极    72
第二电极    74、75
连接结构    76
导线        80
具体实施方式
请参阅图1和图2，该发光二极管自下至上依次生长有基板10，缓冲层20，发光层30、欧姆接触层40、电流扩散层50和透明导电层60。所述发光二极管上设有电极70，该电极70与导线80通过打线连接。
所述基板10的材料可以为蓝宝石(Al2O3)、碳化硅(SiC)、硅(Si)、氮化镓(GaN)或氧化锌(ZnO)中的一种，根据所需要达到的物理性能和光学特性以及成本预算而定。
所述缓冲层20生长于基板10之上，采用材料为氮化镓(GaN)或氮化铝(AlN)等中的一种。
所述发光层30包括紧贴着缓冲层20生长并位于下部的N型半导体层32和位于上部的P型半导体层34，该N型半导体层32具有横向的外延结构36。所述N型半导体层32的材料为N型氮化镓(GaN)，前述缓冲层20用于降低基板10与N型半导体层32之间因晶格差异所产生的应力。所述P型半导体层34生长于N型半导体层32之上，该P型半导体层34的材料为P型氮化镓(GaN)。当然在生成该发光层30时，可利用氮化镓铟和氮化镓铝材料不同的配比及掺杂形成不同的结构，如双异质结构、单量子阱结构或多量子阱结构。
在P型半导体层34之上依次形成欧姆接触层40、电流扩散层50和透明导电层60。该欧姆接触层40所用材料可以为掺杂镁(Mg)的氮化镓铟铝(InAlGaN)或者掺杂镁(Mg)的氮化镓(GaN)。透明导电层60的材料可以是氧化铟锡(ITO)。
所述电极70包括第一电极72和第二电极74，所述第一电极72设置于透明导电层60上表面，所述第二电极74设置于N型半导体层32的外延结构36上表面，该第一电极72和第二电极74并行设置在该发光二极管的一侧。该发光二极管经由导线80在第一电极72和第二电极74上打线连接。所述导线80的材料为金、银、铜或铝中的一种，或者其他金属的合金。所述电极70一般采用金或铝材料，当然也可以为其他金属的合金。在打线过程中，导线80在其与电极70接触的末端形成熔融金属，该熔融金属覆盖于电极70的表面，当覆盖面积达到60％以后停止打线，使熔融金属固化，由此得到覆盖电极面积大于等于60％的连接结构76。导线80与电极70的接合面积达到此比例可以使两者连接更加紧密和牢固，避免导线80轻易地与电极70脱落和连接断裂。优选的，当连接结构76与电极70的接合面积达到电极70面积的80％或以上时，导线80与电极70的连接状况最为牢固。特别的，打线过程中，要严格保证熔融金属不溢出电极70的表面，从而污染到晶片表面，由此影响发光二极管的出光效率。
图3为本发明第二实施例的发光二极管的剖面示意图。该发光二极管包括基板10，缓冲层20，发光层90、欧姆接触层40、电流扩散层50和透明导电层60。所述发光二极管上设有电极70，该电极70与导线80通过打线连接。
所述电极70包括第一电极72和第二电极75，与前述实施例不同之处在于，该第二电极75设置于所述基板10的底部，使该发光二极管形成一垂直结构。需要通过打线方式与导线80连接的仅为第一电极72，第二电极75直接与外界电路结构相连。
所述第一电极72与导线80经打线连接时熔融金属形成的连接结构76覆盖第一电极72的面积达第一电极72面积的60％以上，以能够达到80％以上为最优。
本发明的技术内容及技术特点已揭露如上，然而本领域技术人员仍可能基于本发明的教示及揭示而作出种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并为所附的权利要求所涵盖。

Claims (10)

1.一种发光二极管，包括基板、生长于基板上的缓冲层、生长于缓冲层上的发光层、生长于发光层上的欧姆接触层、生长于欧姆接触层上的电流扩散层、电极及导线，所述导线的一端与电极打线连接，其特征在于：所述导线与电极经打线形成连接结构，该连接结构与电极的接合面积大于等于电极面积的60％。
2.如权利要求1所述的发光二极管，其特征在于：所述连接结构与电极接合面积大于电极面积的80％。
3.如权利要求1所述的发光二极管，其特征在于：所述电极包括并且并行设置于该发光二极管的同一侧的第一电极和第二电极，该第一电极与第二电极分别与导线连接。
4.如权利要求1所述的发光二极管，其特征在于：所述电极包括第一电极和第二电极，该第一电极设置于电流扩散层上且与导线经由打线连接，该第二电极设置于基板的底部。
5.如权利要求1至4中任一项所述的发光二极管，其特征在于：所述导线的材料为金、银、铜或铝。
6.如权利要求1至4中任一项所述的发光二极管，其特征在于：所述基板的材料为蓝宝石、碳化硅、硅、氮化镓或氧化锌。
7.如权利要求1至4中任一项所述的发光二极管，其特征在于：所述发光层包括N型半导体层和P型半导体层，该N型半导体层为N型氮化镓材料，P型半导体层为P型氮化镓材料。
8.如权利要求1至4中任一项所述的发光二极管，其特征在于：所述发光层为双异质结构、单量子阱结构或多量子阱结构。
9.如权利要求1至4中任一项所述的发光二极管，其特征在于：所述电流扩散层上还形成有一层透明导电层。
10.一种发光二极管制造方法，包括以下步骤：
形成基板并在基板上依次生长缓冲层、发光层、欧姆接触层和电流扩散层；
在发光二极管上形成电极；
将电极与导线打线连接，并且打线中形成的熔融金属与电极接合形成连接结构，该连接结构与电极的接合面积大于等于电极面积的60％。
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