CN1441489A - 半导体装置及其制造方法、电路板和电子仪器 - Google Patents
半导体装置及其制造方法、电路板和电子仪器 Download PDFInfo
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- CN1441489A CN1441489A CN03106176A CN03106176A CN1441489A CN 1441489 A CN1441489 A CN 1441489A CN 03106176 A CN03106176 A CN 03106176A CN 03106176 A CN03106176 A CN 03106176A CN 1441489 A CN1441489 A CN 1441489A
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Abstract
一种半导体装置,包含:形成了布线图案(14)的基板(11)、搭载在基板(11)上的半导体芯片(20)、在基板(11)上密封半导体芯片(20)的密封部(51)以及在基板(11)的上方由密封部(51)支撑的半导体芯片(20)的散热体(32);散热体(32)电连接着布线图案(14)的一部分。在提高半导体装置的散热性的同时,能实现电特性的稳定化。
Description
技术领域
本发明涉及半导体装置及其制造方法、电路板和电子仪器。
背景技术
在半导体装置的开发中,实现半导体芯片的电特性的稳定化是十分重要的。例如,我们知道把GND电位的部分连接导电箔。这样,就能减少半导体芯片对其他器件产生噪声、以及接收来自其他器件的噪声。如果导电箔的面积大,则使噪声减少的效果就好。
但是,如果考虑小型的半导体装置,就希望半导体装置的元件数量越少越好。另外,为了提高半导体装置的可靠性,提高半导体芯片的散热性也是很重要的。
发明内容
鉴于以上所述课题的存在,本发明的目的在于:使半导体装置的散热性提高,并且实现电特性的稳定化。
(1)本发明的半导体装置,包含:
形成了布线图案的基板;
搭载在所述基板上的半导体芯片;
在所述基板上密封所述半导体芯片的密封部;
在所述基板的上方,支撑在所述密封部上的所述半导体芯片的散热体;
所述散热体电连接所述布线图案的一部分。
根据本发明,用于使半导体芯片散热的散热体电连接了布线图案的一部分。例如通过使布线图案的GND电位的部分与散热体导通,能实现半导体芯片的电特性的稳定化。因为与布线图案导通的部分是使半导体芯片散热的散热体的部分,所以能减少元件的数量,能有效地利用半导体装置内的空间。
(2)在该半导体装置中,还可以包含:第一端部接合了所述布线图案,并且向着所述散热体引出的引线;
通过所述引线的中间部与所述散热体接触,所述散热体电连接了所述布线图案。
据此,引线的中间部接触散热体。通过控制引线的高度,能简单地电连接布线图案和散热体。
(3)在该半导体装置中,所述半导体芯片的具有电极的面可以向着与所述基板相反的一侧;
所述引线的第二端部接合了所述半导体芯片的电极。
(4)在该半导体装置中,所述引线的第二端部可以电连接了所述基板的所述布线图案。
(5)在该半导体装置中,还可以包含:设置在所述基板上,向着所述散热体延伸的管脚。
据此,设置在基板上的管脚接触散热体。通过设置给定高度的管脚,就能更简单地电连接布线图案和散热体。
(6)在该半导体装置中,所述基板可以包含电连接了所述布线图案的通孔;
所述管脚的基端部插入了所述通孔中。
据此,就能把管脚可靠地固定在基板上。
(7)在该半导体装置中,所述管脚可以在所述散热体的方向具有弹性。
据此,能缓冲由管脚提供给散热体的应力。
(8)在该半导体装置中,所述散热体的一部分可以向所述基板的方向弯曲;
所述散热体的所述弯曲部接触所述布线图案。
据此,因为能减少零件的数量,所以能降低成本。
(9)在该半导体装置中,所述散热体可以在与所述基板相反一侧,从所述密封部露出。
据此,不但能使半导体芯片的电特性稳定,而且能进一步提高散热性。
(10)在该半导体装置中,所述散热体可以在与所述基板相反一侧由所述密封部覆盖。
(11)在该半导体装置中,所述散热体可以在所述密封部的侧部露出。
(12)在该半导体装置中,所述散热体的至少任意一方的面形成粗糙面。
(13)在该半导体装置中,在所述散热体上形成了多个通孔;
在所述通孔内填充了所述密封部的材料。
据此,能提高散热体和密封部的材料的紧贴性。
(14)在该半导体装置中,述散热体可以具有向所述基板的方向突起的凸部。
据此,因为散热体和半导体芯片的距离缩短,所以能进一步提高半导体芯片的散热性。
(15)本发明的电路板安装有所述半导体装置。
(16)本发明的电子仪器具有所述半导体装置。
(17)本发明的半导体装置的制造方法,包含以下步骤:
(a)在模具的凹部设置散热体;
(b)在所述模具中设置具有布线图案并且搭载了半导体芯片的基板,使所述半导体芯片配置在所述凹部内。
(c)通过在所述凹部中填充密封材料,密封所述半导体芯片,并且安装所述散热体。
在所述(c)步骤中,在使所述布线图案的一部分电连接了所述散热体的状态下,填充所述密封材料。
根据本发明,在布线图案的一部分电连接了用于使半导体芯片散热的散热体的状态下,填充密封材料。例如,通过使布线图案的GND电位的部分与散热体导通,能实现半导体芯片的电特性的稳定性。与布线图案导通的部分是使半导体芯片散热的散热体的部分,所以能减少元件的数量,能有效地利用半导体装置内的空间。
(18)在该半导体装置的制造方法中,
在所述(b)步骤前还包含:在所述布线图案上接合引线的第一端部的步骤;
在所述(c)步骤中,在使所述布线的中间部接触所述散热体的状态下,填充所述密封材料。
据此,使引线的中间部与散热体接触。通过控制引线的高度,就能简单地电连接布线图案和散热体。
(19)在该半导体装置的制造方法中,
所述半导体芯片的具有电极的面向着与所述基板相反的一侧;
在所述(b)步骤之前还包含:在所述半导体芯片的所述电极上接合所述引线的第二端部的步骤。
(20)在该半导体装置的制造方法中,
在所述(b)步骤前,还可以包含:在所述基板的所述布线图案上接合所述引线的第二端部的步骤。
(21)在该半导体装置的制造方法中,
在所述(b)步骤之前还包含:在所述基板上设置管脚的步骤;
在所述(c)步骤中,可以在使所述管脚的前端部接触所述散热体的状态下,填充所述密封材料。
据此,使基板上设置的管脚接触散热体。只通过设置给定高度的管脚,就能简单地电连接布线图案和散热体。
(22)在该半导体装置的制造方法中,
所述基板包含电连接了所述布线图案的通孔;
所述管脚的基端部插入所述通孔中。
据此,就能可靠地把管脚固定在基板上。
(23)在该半导体装置的制造方法中,
所述管脚可以在所述散热体的方向具有弹性。
据此,就能缓冲由管脚提供给散热体的应力。
(24)在该半导体装置的制造方法中,
在所述步骤(a)前还包含:使所述散热体的一部分弯曲,使其直立的步骤;
在所述(c)步骤中,在使所述散热体的所述弯曲部接触所述布线图案的状态下,填充所述密封材料。
据此,因为能减少元件数量,所以能降低成本。
(25)在该半导体装置的制造方法中,
在所述基板上,平面排列搭载多个所述半导体芯片;
在所述步骤(a)中,把多个所述散热体一体化的集合体设置在所述模具的所述凹部;
在所述(b)步骤中,设置所述基板,使所述多个半导体芯片配置在所述凹部内;
在所述(c)步骤中,密封所述多个半导体芯片,并且安装所述集合体。
据此,因为能统一安装多个散热体,所以生产效率提高。
(26)在该半导体装置的制造方法中,
在所述(c)步骤后还可以包含:通过按照所述集合体切断所述密封部和所述基板来形成具有所述散热体的单片的步骤。
附图说明
下面简要说明附图。
图1是表示本发明实施例1的图。
图2是表示本发明实施例1的图。
图3是表示本发明实施例1的图。
图4是表示本发明实施例1的图。
图5是表示本发明实施例1的图。
图6是表示本发明实施例1的图。
图7是表示本发明实施例2的图。
图8是表示本发明实施例3的图。
图9是表示本发明实施例4的图。
图10是表示本发明实施例4的图。
图11是表示本发明实施例5的图。
图12是表示本发明实施例5的图。
图13是表示本发明实施例6的图。
图14是表示本发明实施例7的图。
图15是表示本发明实施例7的图。
图16是表示本发明实施例8的图。
图17是表示本发明实施例8的图。
图18是表示本发明实施例9的图。
图19是表示本发明实施例9的图。
图20是表示本发明实施例10的电路板的图。
图21是表示本发明实施例10的电子仪器的图。
图22是表示本发明实施例10的电子仪器的图。下面简要说明附图符号。
10、11—基板;14—布线图案;16—通孔;18—通孔;20—半导体芯片;26—引线;27—第一端部;28—第二端部;30—集合体;32—散热体;40—模具;42—凹部;44—底面;50、51—密封部;60—集合体;62—散热体;70—集合体;72—散热体;80—集合体;82—散热体;84—通孔;90—集合体;92—散热体;94—凸部;100—集合体;102—散热体;104—直立部;110—集合体;112—散热体;113—上部;114—突起部;115—侧部;120—引线;122—第一端部;124—第二端部;132—前端部;134—基端部;140散热体;142—弯曲部。
具体实施方式
下面,参照附图说明本发明实施例。但是,本发明并不局限于以下的实施例。
(实施例1)
图1~图6是表示本发明实施例1的半导体装置及其制造方法的图。图1是表示本实施例的半导体装置的图。该半导体装置包含:基板11、半导体芯片20、密封半导体芯片20的密封部51、使半导体芯片20散热的散热体32。
基板11称作半导体装置的插入层。基板11可以由有机类(聚酰亚胺基板)或无机类(陶瓷基板、玻璃基板)中的任意材料形成,也可以由它们的复合构造(玻璃环氧基板)形成。虽然未限定基板11的平面形状,但是常常形成矩形。基板11可以是单层或多层基板中的任意一种。
基板11具有由多条布线构成的布线图案14。布线图案14形成在基板11的单面或两面。在基板11上可以形成用于电连接一方的面和另一方的面的多个通孔16。通孔16如图1所示,可以用导电材料填充,也可以对内壁面进行镀敷。这样,能从基板11的两面实现电连接。
虽然未限定半导体芯片20的形状,但是如图1所示,常常为长方体(包含立方体)。半导体芯片20形成了由图中未显示的晶体管和存储元件构成的集成电路。半导体芯片20具有与集成电路电连接的至少一个(常常为多个)电极22。电极22可以在半导体芯片20的面的端部,沿着外形的两边或4边配置,也可以形成在面的中央部。电极可以由铝类或铜类的金属形成。另外,在半导体芯片20中,避开电极22的中央部,覆盖端部,形成了钝化膜(图中未显示)。钝化膜例如由SiO2、SiN、聚酰亚胺树脂等形成。
半导体芯片20搭载在基板11上。在图1所示的例子中,具有电极22的面(例如有源面)与基板11向着相反一侧(向上)而搭载。换言之,半导体芯片20面朝上安装在基板11上。半导体芯片20可以通过粘合剂接合在基板11上。
在图1所示的例子中,在基板11上搭载了一个半导体芯片20。作为变形例,可以在基板11上立体地层叠多个半导体芯片。此时,通过把半导体芯片20及其周围的结构置换为搭载在最上层的半导体芯片,就可以应用本实施例。本发明也能应用于堆叠型的半导体装置中。
半导体芯片20电连接了布线图案14。可以通过引线24实现两者的电连接。此时,可以应用球凸台法。即把引出到工具(例如毛细管)的外部的引线24的前端部熔化为球状,通过把它的前端部热压接(最好同时使用超声波振动)在电极上,把引线24电连接电极22。例如,可以把引线24接合了半导体芯片20的电极22后,接合基板11的布线图案14。此时,如图1所示,在电极22形成了凸台。
密封部51设置在基板11上,并且密封半导体芯片20。密封部51的材料例如可以树脂(环氧树脂)。并未限定密封方法,例如如后所述,可以通过在模具的凹部填充密封的材料来进行,可以应用填充法来进行。
散热体32使半导体芯片20散热。散热体32也能称作热吸收器。散热体32最好用适合于热交换的材料形成,但是并不限定于该材料。例如,可以由铜类或铁类的材料形成。在图1所示的例子中,散热体32形成了板状。据此,因为加工简单,所以能降低成本。散热体32可以由一个构件一体加工而成,也可以通过组合多个构件而形成。例如,可以通过蚀刻法和电镀法(电解或非电解电镀)等来进行化学加工,也可以通过压力加工和切断加工等来进行机械加工。
在散热体32上可以形成图中未显示的金属薄膜(例如镀层薄膜)。例如,可以在散热体32中的在外部露出的部分(在图1中,从密封部51露出的部分)上形成金属薄膜。当用铜类的材料形成了散热体32时,可以进行镀镍作为金属薄膜。这样,能提高散热体32的热传导。
在图1所示的例子中,在与基板11相反一侧,散热体32从密封部51露出。这样,能提高半导体芯片20的散热性。
如图1所示,在基板11上可以设置多个外部端子52。外部端子52可以是焊锡球。外部端子52可以设置在基板11的布线图案14的连接盘部。在图1所示的例子中,外部端子52配置在通孔16的位置。
在本实施例中,如图1和2所示,接合了半导体芯片的多条引线中的一部分的引线26(在图2中,一个半导体芯片有一个,但是也可以为多个)接触散热体32。图1是引线26的部分的半导体装置的剖视图。
引线26可以由与上述的引线24相同的材料(例如金类的材料)和相同的方法形成。引线26能在半导体芯片20的引线接合步骤中,与引线24同时形成。或者,引线26的材料可以与引线24的材料不同,如果是导电材料,就不限定该材料。
引线26具有第一和第二端部27、28。第二端部28是与第一端部27相反一侧的端部。第一端部27接合了布线图案14(例如连接盘)。此时,可以在两者间存在凸台(图中未显示)。而且,在图1所示的例子中,第二端部28接合了半导体芯片20的电极22。此时,可以在两者之间存在凸台。或者,当引线26和凸台的材料相同时,第二端部28也能包含该凸台。
如图2所示,引线26的环形比其他引线24高。具体地说,如图1所示,引线26的中间部(除去第一和第二端部27、28的一部分(例如顶部))向着散热体32引出,并且比引线24的中间部(例如顶部)高。
换言之,引线26从电极22的第二端部28向着散热体32引出到接触散热体32的高度。而且,通过把引线26从与散热体32接触的中间部向基板11引出,在第一端部27电连接了布线图案14。即通过使引线26的中间部接触散热体32,散热体32电连接了布线图案14。
根据本实施例的半导体装置,用于使半导体芯片20散热的散热体32电连接了布线图案14的一部分。例如,通过使布线图案14的GND电位的部分与散热体32导通,能实现半导体芯片20的电特性的稳定化。即能减少半导体芯片中对其他器件的噪声的发生、对来自其他器件的噪声的接收。
另外,与布线图案14导通的部分是使半导体芯片20散热的散热体32的部分。因此,能减少元件数量,能有效地利用半导体装置内的空间。通过增大散热体的面积,不但能提高使噪声减小的效果,而且能进一步提高半导体芯片20的散热性。
根据图1所示的例子,通过控制引线26的高度(环形的高度),就能简单地电连接布线图案14和散热体32。另外,因为引线26在散热体32的方向具有弹性,所以不但减小了对散热体32的应力,而且能可靠地与散热体32接触。
下面,说明本实施例的半导体装置的制造方法。图2~图6是表示图1所示的半导体装置的制造方法的一个例子的图。在以下的例子中,包含:统一密封基板10上的多个半导体芯片20的步骤。须指出的是,本实施例的半导体装置的制造方法并不局限于此,也可以分别密封一个半导体芯片20。
首先,如图2所示,准备基板10。基板10如果形成单片,就成为半导体装置的插入板。在基板10上为了搭载多个半导体芯片20,设置了多个搭载区域12。搭载区域12形成在基板10的任意一方或两方的面上。在图1所示的例子中,多个搭载区域12在基板10的面上排列为多行多列(矩阵状)。
如图2所示,在基板10的多个搭载区域12上分别搭载半导体芯片20。在基板10上平面排列多个半导体芯片20。在图2所示的例子中,使电极向上,接合半导体芯片20(面朝上接合)。
接着,进行引线接合步骤。具体地说,形成电连接半导体芯片20和布线图案14的引线24、26。引线24、26可以用同一制造装置同时形成。或者,对于多个半导体芯片20,统一形成多条引线24(或多条引线26)后,统一形成多条引线26(或多条引线24)。使引线26的环形比引线24的环形高。
如图3所示,准备包含多个散热体(使半导体芯片20散热)的集合体30。多个散热体32是一体化的。集合体30如果单片,就成为半导体芯片20的散热体。
在本实施例中,使用图4所示的模具40,密封基板10上的多个半导体芯片20,并且把集合体安装到基板10上。
模具40具有凹部42。模具40可以是金属模。以能容纳多个半导体芯片20的大小(宽度和深度)形成了凹部42。凹部42的底面可以是平的面。
如图4所示,把集合体30设置在模具40的凹部42中。如果与凹部42的平面形状(例如底面44的形状)对应(例如同一形状)形成集合体30的平面形状,则只需把集合体投入凹部42中,就能简单地设置。
在图4所示的例子中,使集合体30(成为散热体32的部分)与凹部40的底面44接触的状态下,设置了集合体30。具体地说,使呈板状的集合体30的一方的面与凹部42的底面接触的状态下,设置了集合体30。据此,如图5所示,在与基板10相反一侧,能使散热体32从密封材料露出。另外,因为密封材料不会进入集合体30和模具40的接触部分,所以能减少密封材料的附着导致的对模具40的清理次数。
接着,把基板10设置在模具上。此时,在凹部42内配置多个半导体芯片20。然后,通过使密封材料流入凹部42,统一密封多个半导体芯片20。具体地说,在使引线26的中间部接触散热体32的状态下,填充密封材料。密封材料可以使用树脂。此时,能把树脂称作模压树脂。据此,因为统一密封多个半导体芯片20,所以能提高生产效率。
这样一来,在多个半导体芯片20和集合体30之间设置密封材料。集合体30接合了密封材料。即通过密封材料的填充,能把集合体30安装在基板10上。
这样,如图5所示,能制造内置了多个半导体芯片20的半导体装置1。半导体装置1包含:基板10、多个半导体芯片20、密封多个半导体芯片20的密封部50、多个散热体的部分一体形成的集合体30。在图5所示的例子中,在与基板10相反一侧,集合体30从密封部50露出。在以后的步骤中,把半导体装置1切断为单片。即半导体装置1是用于制造多个单片的半导体装置3(参照图1)的中间制品。
在切断半导体装置1的步骤之前,如图5所示,可以在基板10上设置多个外部端子52。此时,因为能对多个半导体装置3统一设置外部端子52,所以生产效率优异。
接着,如图6所示,切断半导体装置1(内置了多个半导体芯片20)。具体地说,按照各集合体30,切断密封部50和基板10。可以由切断工具(例如硅晶片切断时使用的刀)54切断。如图6所示,可以从集合体30一侧切断,也可以从基板10一侧切断。
根据该方法,通过在模具40中设置把多个散热体32一体化而成的集合体30,能统一在基板上安装多个散热体32。因此,例如,能使多个散热体32对多个半导体芯片20统一定位,能提高具有散热体32的半导体装置的生产效率。
本发明并不局限于本实施例,能应用于各种形态。在以下的实施例的说明中,省略了与其他实施例共同的事项(结构、作用、功能和效果)。须指出的是,也包含通过组合多个实施例而实现的事项。
(实施例2)
图7是表示实施例2的半导体装置的图。在本实施例中,引线120的中间部接触了散热体32。而且,引线120的两个端部(第一和第二端部122、124)都接合了基板11上的布线图案14。
引线120的材料和形成方法能应用上述的引线26的内容。引线120具有第一和第二端部122、124。第二端部124是与第一端部122相反一侧的端部。第一端部122接合了布线图案14(例如连接盘)。此时,可以使两者间存在凸台。或者,当引线120和凸台的材料相同时,第一端部122能包含该凸台。而且,在图2所示的例子中,第二端部124也接合了布线图案14(例如连接盘)。此时,可以使两者间存在凸台。
如图7所示,引线120的环形比其他引线24高。具体地说,如图7所示,引线120的中间部(除去第一和第二端部122、124的一部分)向着散热体32引出,并且比引线24的中间部高。
换言之,引线120从电极22上的第一端部122向着散热体32引出到接触散热体32的高度。而且,通过把引线120从与散热体32接触的中间部向基板10引出,在第二端部124电连接了布线图案14。即通过使引线120的中间部接触散热体32,散热体32电连接了布线图案14。
作为变形例,可以把半导体芯片20面朝下接合在基板11上。此时,常常在半导体芯片20的电极22上形成了凸台。
在本实施例中,也能取得与上述的实施例同样的效果。须指出的是,因为能从上述的事项导出半导体装置的制造方法,所以省略。
(实施例3)
图8是表示实施例3的半导体装置的图。在本实施例中,基板11上的管脚130接触了散热体32。管脚130在基板11上电连接了布线图案14,并且向着散热体32延伸。
如果管脚130是导电材料,则并未限定它的材料。例如管脚130可以由与布线图案14相同的材料形成。虽然并未限定管脚130的材料,但是最好具有给定的高度。管脚130设置在基板10上。例如管脚130的基端部134可以插入基板11的通孔18中。通过这样,能在基板11上可靠地固定管脚。另外,通过通孔18,能简单地使管脚130电连接布线图案14。须指出的是,在图8所示的例子中,通孔18例如可以通过镀敷,而只在内壁面上设置导电材料。作为变形例,在布线图案14的形成步骤中,可以同时立体地形成管脚130。此时,管脚130与布线图案14一体化。
管脚130的前端部132接触了散热体32。如图8所示,管脚130的前端部132弯曲,可以为J字形状(具体地说,反J字形状)。即前端部132弯曲。通过这样,能增大管脚130和散热体32的接触面积。另外,管脚130可以在散热体32的方向(向上(或向下))具有弹性。管脚130可以是弹簧,也可以是弹性连接器。或者,可以使用具有弹性的导电材料作为管脚130。据此,能缓和由管脚130提供给散热体的应力。
根据本实施例,设置在基板上的管脚接触了散热体。只通过设置给定高度的管脚,就能更简单地电连接布线图案和散热体。
在本实施例中,能取得与上述的实施例同样的效果。须指出的是,因为能从上述的事项导出半导体装置的制造方法,所以省略。
(实施例4)
图9和图10是表示实施例4的半导体装置的图。具体地说,图9是半导体装置的剖视图,图10是图9所示的半导体装置的俯视图。在本实施例中,散热体140的一部分电连接了布线图案14。散热体140的事项能尽可能应用上述散热体32的事项。
如图9所示,散热体140的一部分在基板10的方向弯曲。如图10所示,弯曲部142可以在散热体140除去端部的部分(内侧部分)。在图10所示的例子中,把散热体140的一部分在除去任意一条短边的部分(相对的长边和剩下的短边)切成长条状(细长形状)。弯曲部142由切断工具(刀具)切出后,能进行弯曲加工。弯曲部142的形成在密封步骤前进行。须指出的是,如图10所示,在散热体140的弯曲部142露出密封部51。
作为变形例,可以在散热体140的端部形成弯曲部142。即局部地切掉散热体140的外周,形成弯曲部142。
根据本实施例,不仅能实现上述的效果,而且能减少半导体装置的元件数量,所以能降低成本。须指出的是,关于半导体装置的制造方法,如上所述。
(实施例5)
图11和图12是表示实施例5的半导体装置的图。在以下的实施例(实施例5~9)中,散热体的形状和半导体装置的制造方法与上述的实施例不同。
在本实施例中,集合体60(散热体62)的至少一方的面(单面或两面)形成了粗糙面。
如图11所示,集合体60的向着基板10一侧的面64可以成为粗糙面。可以使集合体60的面64变粗糙,使其丧失平坦性。可以使用喷沙,机械地使集合体60的面64变粗糙,或者使用等离子体、紫外线、臭氧等,在物理上使集合体60的面64变粗糙,或者使用蚀刻剂,化学地使集合体60的面64变粗糙。另外,能通过凹痕加工,形成粗糙面。须指出的是,至少集合体60的散热体62的部分形成了粗糙面。
据此,集合体60(或散热体62)的向着基板10的一侧成为与密封材料(或密封部51)的接触部。因此,能使集合体60和密封材料的接合面积增大,或者能使物理、化学的接合力增大,能提高两者的紧贴性。
如图12所示,集合体70的与基板10相反一侧的面74可以是粗糙面。在图8所示的例子中,集合体70的面74从密封材料露出。至少集合体70的散热体72的部分形成了粗糙面。
据此,通过使集合体70(或散热体72)的与基板10相反一侧的面74为粗糙面,能增大露出面积。因此,能进一步提高半导体芯片的散热性。
可以与图示的例子不同,把集合体的两面(至少成为散热体的部分的两面)形成粗糙面。这样,能实现上述的两方的效果。
(实施例6)
图13是表示实施例6的半导体装置的图。在本实施例中,在集合体80(在图13中,为切断后的散热体82)上形成了多个通孔84。通孔84贯穿集合体80的向着基板10的面和与它相反的面。通孔84至少形成在集合体80的散热体82的部分。可以通过蚀刻而化学地形成多个通孔84,也可以用钻等物理地形成。
通过在集合体80上形成通孔84,使密封材料也进行通孔84内,所以能提高集合体80(或散热体82)和密封材料(或密封部51)的紧贴性。
(实施例7)
图14和图15是表示实施例7的半导体装置的制造方法的图。在本实施例中,在集合体90上形成了凸部94。
如图14所示,向着模具40的凹部42的开口一侧设置凸部94。即让凸部94与半导体芯片20相对。
在成为集合体90的多个散热体92的部分形成凸部94。即形成凸部94,使一个凸部94与任意一个半导体芯片20对应。凸部94的平面形状可以比半导体芯片20的平面形状小。例如如图14所示,当沿着半导体芯片20的各边,排列多个电极22时,凸部94可以具有配置在用多个电极22围成的区域的内侧的平面形状。据此,因为能避开引线24配置凸部94,所以能避免集合体90与引线24的接触。另外,不限制引线24的环形的高度,能使散热体92由于凸部94而局部变厚,所以能提高半导体芯片20的散热性。须指出的是,凸部94可以与半导体芯片20的面不接触。
对集合体形成凸部94的方法例如可以应用半蚀刻法。或者,可以用镀层法形成。这些时候,用一个构件形成了集合体90。与这些不同,可以通过在集合体90的成为散热体92的部分安装另外的构件(无论是相同材料还是别的材料),可以在集合体90上设置凸部94。此时,可以通过焊接、粘结或机械的接合(铆接加工等)安装两者。
然后,进行给定的步骤(密封步骤和切断步骤),就能取得图15所示的单片的半导体装置。
根据本实施例,向着半导体芯片20配置了散热体92的凸部94。因此,缩小了散热体92和半导体芯片20的距离,从而能进一步提高半导体芯片20的散热性。
(实施例8)
图16和图17是表示实施例8的半导体装置的制造方法的图。在本实施例中,在集合体100的外周端部,形成了直立部104。即直立形成了集合体100的外周。
如图16所示,通过直立部104,以从凹部42的底面44浮出的状态设置了集合体100的散热体102的部分。在图16的例子中,集合体100在除去直立部104的部分,与凹部42的底面44非接触。
直立部104可以设置在集合体的整个外周端部上,也可以局部地(例如矩形的集合体100的角部或对置的两条边)设置。直立部104的形成方法可以是通过半蚀刻法、电镀法或通过进行机械的拉深加工,由一个构件形成。或者,通过在集合体100的外周端部,安装别的构件(无论是相同材料还是别的材料),设置直立部104。
然后,进行给定的步骤(密封步骤和切断步骤),就能取得图17所示的半导体装置。因为,在散热体104从凹部42的底面44浮出的状态下密封,所以如图17所示,能在与基板10相反的一侧用密封材料密封散热体104。这样,使散热体102不在外部露出,能提高半导体芯片20的散热性。须指出的是,如图17所示,散热体102可以从半导体装置的侧部露出。
(实施例9)
图18和图19是表示实施例9的半导体装置的制造方法的图。在本实施例中,在集合体110上沿着切断线L(参照图6),形成了纵剖面几乎为连续的形状的突起部114。即在集合体110的俯视图中,突起部114形成沿着切断线L延伸的带状(具有给定宽度),由突起部114划分的区域成为散热体112。突起部114的宽度最好比切断步骤中的切断工具54(参照图6)的刀刃宽度大。这样,能简单地切断突起部114的中心轴。
如图18所示,向着模具40的凹部42的开口一侧设置突起部114。即向着基板10一侧设置突起部114。在图18所示的例子中,在突起部114上,带有在突起的前端部变细的锥度。
如图18所示,可以在集合体110的与突起部114相反的一侧形成凹部116。凹部116为纵剖面几乎连续的形状。即在集合体110的俯视图中,凹部116变为沿着切断线L延伸的沟。在图18所示的例子中,在凹部116上带有开口变宽的锥度。通过这样,当从凹部116一侧切断集合体110时,能使切断工具54的刀的位置与凹部116(或突起部114)的中心轴一致,所以能正确地切断。须指出的是,在凹部116中可以不填充密封材料。
对集合体110形成突起部114(以及凹部116)的方法可以是通过进行机械的拉深加工,从一个构件形成。或者,通过安装另外的构件来形成。
然后,进行给定的步骤(密封步骤和切断步骤),就能取得图19所示的半导体装置。在切断步骤中,因为切断突起部114(或凹部116),所以在单片的半导体装置的上部和侧部115露出散热体112。在图19所示的例子中,散热体112构成角锥梯形的一部分。作为变形例,散热体112可以构成球体的一部分(例如半球)。
据此,散热体112设置为包围半导体芯片20。据此,能进一步提高半导体芯片20的散热性。另外,通过使布线图案14的GND电位的部分与散热体112导通,能使半导体芯片20的电特性进一步稳定。另外,通过形成凹部116,能识别切断线L的位置,所以切断的定位变得容易。
(实施例10)
图20表示了应用了上述的实施例的电路板。半导体装置3安装在电路板1000上。电路板1000一般使用玻璃环氧基板等有机类基板。在电路板1000上形成了例如由铜构成的布线图案,使其成为所希望的电路,布线图案和半导体装置3的外部端子接合在一起。
作为具有本发明实施例的半导体装置的电子仪器,图21中表示了笔记本型的个人电脑2000,图22中表示了移动电话3000。
本发明并不局限于上述的实施例,而是能有各种变形。例如,本发明包含与实施例中说明的结构实质上相同的结构(例如,功能、方法以及结果相同的结构或目的以及结果相同的结构)。另外,本发明包含置换了实施例中说明的结构的非本质部分的结构。另外,本发明包含与实施例中说明的结构能产生相同的作用的结构或能实现相同的目的的结构。另外,本发明包含在实施例中说明的结构中附加了公知技术的结构。
Claims (26)
1.一种半导体装置,其特征在于:包含:
形成了布线图案的基板;
搭载在所述基板上的半导体芯片;
在所述基板上密封所述半导体芯片的密封部;
在所述基板的上方,支撑在所述密封部上的所述半导体芯片的散热体;
所述散热体电连接所述布线图案的一部分。
2.根据权利要求1所述的半导体装置,其特征在于:还包含:
第一端部接合所述布线图案,向着所述散热体引出的引线;
通过所述引线的中间部与所述散热体接触,所述散热体电连接所述布线图案。
3.根据权利要求2所述的半导体装置,其特征在于:
所述半导体芯片的具有电极的面向着与所述基板相反的一侧;
所述引线的第二端部接合所述半导体芯片的电极。
4.根据权利要求2所述的半导体装置,其特征在于:
所述引线的第二端部电连接所述基板的所述布线图案。
5.根据权利要求1~4中任意一项所述的半导体装置,其特征在于:
还包含设置在所述基板上,向着所述散热体延伸的管脚;
通过所述管脚的前端部接触所述散热体,所述散热体电连接所述布线图案。
6.根据权利要求5所述的半导体装置,其特征在于:
所述基板包含电连接了所述布线图案的通孔;
所述管脚的基端部插入所述通孔中。
7.根据权利要求5或6所述的半导体装置,其特征在于:
所述管脚在所述散热体的方向具有弹性。
8.根据权利要求1~7中任意一项所述的半导体装置,其特征在于:
所述散热体的一部分向所述基板的方向弯曲;
所述散热体的所述弯曲部接触所述布线图案。
9.根据权利要求1~8中任意一项所述的半导体装置,其特征在于:所述散热体在与所述基板相反的一侧,从所述密封部露出。
10.根据权利要求1~8中任意一项所述的半导体装置,其特征在于:
所述散热体在与所述基板相反一侧,由所述密封部覆盖。
11.根据权利要求1~10中任意一项所述的半导体装置,其特征在于:
所述散热体在所述密封部的侧部露出。
12.根据权利要求1~11中任意一项所述的半导体装置,其特征在于:
所述散热体的至少任意一方的面形成为粗糙面。
13.根据权利要求1~12中任意一项所述的半导体装置,其特征在于:
在所述散热体上形成多个通孔;
在所述通孔内填充有所述密封部的材料。
14.根据权利要求1~13中任意一项所述的半导体装置,其特征在于:
所述散热体具有向所述基板的方向突起的凸部。
15.一种电路板,其特征在于:
安装了权利要求1~14中任意一项所述的半导体装置。
16.一种电子仪器,其特征在于:
具有权利要求1~14中任意一项所述的半导体装置。
17.一种半导体装置的制造方法,其特征在于:包含:
(a)在模具的凹部设置散热体;
(b)在所述模具中设置具有布线图案并搭载了半导体芯片的基板,使所述半导体芯片配置在所述凹部内;
(c)通过在所述凹部中填充密封材料,密封所述半导体芯片,并且安装所述散热体的步骤;
在所述(c)步骤中,在使所述布线图案的一部分电连接所述散热体的状态下,填充所述密封材料。
18.根据权利要求17所述的半导体装置的制造方法,其特征在于:
在所述(b)步骤之前还包含:在所述布线图案上接合引线的第一端部的步骤;
在所述(c)步骤中,在使所述布线的中间部接触所述散热体的状态下,填充所述密封材料。
19.根据权利要求18所述的半导体装置的制造方法,其特征在于:
所述半导体芯片的具有电极的面向着与所述基板相反的一侧;
在所述(b)步骤之前还包含:在所述半导体芯片的所述电极上接合所述引线的第二端部的步骤。
20.根据权利要求18所述的半导体装置的制造方法,其特征在于:
在所述(b)步骤之前还包含:在所述基板的所述布线图案上接合所述引线的第二端部的步骤。
21.根据权利要求17~20中任意一项所述的半导体装置的制造方法,其特征在于:
在所述(b)步骤之前还包含:在所述基板上设置管脚的步骤;
在所述(c)步骤中,在使所述管脚的前端部接触所述散热体的状态下,填充所述密封材料。
22.根据权利要求21所述的半导体装置的制造方法,其特征在于:
所述基板包含电连接了所述布线图案的通孔;
把所述管脚的基端部插入所述通孔中。
23.根据权利要求21或22所述的半导体装置的制造方法,其特征在于:
所述管脚在所述散热体的方向具有弹性。
24.根据权利要求17~23中任意一项所述的半导体装置的制造方法,其特征在于:
在所述步骤(a)之前还包含:使所述散热体的一部分弯曲,使其直立的步骤;
在所述(c)步骤中,在使所述散热体的所述弯曲部接触所述布线图案的状态下,填充所述密封材料。
25.根据权利要求17~24中任意一项所述的半导体装置的制造方法,其特征在于:
在所述基板上,平面排列搭载多个所述半导体芯片;
在所述步骤(a)中,把多个所述散热体一体化的集合体设置在所述模具的所述凹部内;
在所述(b)步骤中,设置所述基板,使所述多个半导体芯片配置在所述凹部内;
在所述(c)步骤中,密封所述多个半导体芯片,并且安装所述集合体。
26.根据权利要求25所述的半导体装置的制造方法,其特征在于:
在所述(c)步骤之后还包含:通过按照所述集合体切断所述密封部和所述基板来形成具有所述散热体的单片的步骤(d)。
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JP3269815B2 (ja) * | 1999-12-13 | 2002-04-02 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6437984B1 (en) * | 2000-09-07 | 2002-08-20 | Stmicroelectronics, Inc. | Thermally enhanced chip scale package |
US6472743B2 (en) * | 2001-02-22 | 2002-10-29 | Siliconware Precision Industries, Co., Ltd. | Semiconductor package with heat dissipating structure |
TW511450B (en) * | 2001-08-16 | 2002-11-21 | Orient Semiconductor Elect Ltd | Heat dissipation plate with inlay pin and its assembly components |
-
2002
- 2002-02-26 JP JP2002049513A patent/JP2003249607A/ja not_active Withdrawn
-
2003
- 2003-02-20 CN CN03106176A patent/CN1441489A/zh active Pending
- 2003-02-26 US US10/375,866 patent/US20040012099A1/en not_active Abandoned
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8018033B2 (en) | 2007-01-31 | 2011-09-13 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method of the same |
US8497156B2 (en) | 2007-01-31 | 2013-07-30 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method of the same |
CN102456825A (zh) * | 2010-10-25 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
CN104425403A (zh) * | 2013-09-02 | 2015-03-18 | 日月光半导体制造股份有限公司 | 半导体封装件、其制造方法及其使用的切割冶具 |
CN105643855A (zh) * | 2014-11-28 | 2016-06-08 | 东和株式会社 | 电子部件、其制造方法及制造装置 |
CN105643855B (zh) * | 2014-11-28 | 2018-09-18 | 东和株式会社 | 电子部件、其制造方法及制造装置 |
CN107210271A (zh) * | 2015-02-27 | 2017-09-26 | 东和株式会社 | 电子部件及其制造方法和制造装置 |
CN107808854A (zh) * | 2016-09-09 | 2018-03-16 | 东和株式会社 | 电子电路装置及电子电路装置的制造方法 |
CN111430327A (zh) * | 2020-03-05 | 2020-07-17 | 广东工业大学 | 一种高散热扇出型封装结构及封装方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2003249607A (ja) | 2003-09-05 |
US20040012099A1 (en) | 2004-01-22 |
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