EP3567629A3 - Power amplifier modules including related systems, devices, and methods - Google Patents

Power amplifier modules including related systems, devices, and methods Download PDF

Info

Publication number
EP3567629A3
EP3567629A3 EP19151718.4A EP19151718A EP3567629A3 EP 3567629 A3 EP3567629 A3 EP 3567629A3 EP 19151718 A EP19151718 A EP 19151718A EP 3567629 A3 EP3567629 A3 EP 3567629A3
Authority
EP
European Patent Office
Prior art keywords
power amplifier
methods
devices
modules including
related systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19151718.4A
Other languages
German (de)
French (fr)
Other versions
EP3567629A2 (en
Inventor
Myint KO Tin
Philip John LEHTOLA
Matthew Thomas OZALAS
David Steven RIPLEY
Hongxiao SHAO
Peter J. ZAMPARDI, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of EP3567629A2 publication Critical patent/EP3567629A2/en
Publication of EP3567629A3 publication Critical patent/EP3567629A3/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4864—Cleaning, e.g. removing of solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H01L29/0826—Pedestal collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6611—Wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/665—Bias feed arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48175—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/48177—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48601—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48611—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48801—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48811—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48801—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48816—Lead (Pb) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H01L2224/49176—Wire connectors having the same loop shape and height
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/85411—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/85416—Lead (Pb) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13051—Heterojunction bipolar transistor [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H01L2924/14215—Low-noise amplifier [LNA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/48—Indexing scheme relating to amplifiers the output of the amplifier being coupled out by a capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/347—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers

Abstract

A system for biasing a power amplifier module, where the module comprises:
a first die (409) including a power amplifier circuit (415) and a passive component (412)having an electrical property that depends on one or more conditions of the first die, and
a second die (414) including a bias signal generating circuit (413) that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.
EP19151718.4A 2012-06-14 2013-06-13 Power amplifier modules including related systems, devices, and methods Pending EP3567629A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261659848P 2012-06-14 2012-06-14
PCT/US2013/045742 WO2013188712A1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems, devices, and methods
EP13805010.9A EP2862273B1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems and devices

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP13805010.9A Division-Into EP2862273B1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems and devices
EP13805010.9A Division EP2862273B1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems and devices

Publications (2)

Publication Number Publication Date
EP3567629A2 EP3567629A2 (en) 2019-11-13
EP3567629A3 true EP3567629A3 (en) 2020-01-22

Family

ID=49758734

Family Applications (2)

Application Number Title Priority Date Filing Date
EP13805010.9A Active EP2862273B1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems and devices
EP19151718.4A Pending EP3567629A3 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems, devices, and methods

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP13805010.9A Active EP2862273B1 (en) 2012-06-14 2013-06-13 Power amplifier modules including related systems and devices

Country Status (8)

Country Link
US (11) US9041472B2 (en)
EP (2) EP2862273B1 (en)
JP (6) JP5893800B2 (en)
KR (7) KR101921686B1 (en)
CN (2) CN104410373B (en)
HK (1) HK1205596A1 (en)
TW (10) TWI631817B (en)
WO (1) WO2013188712A1 (en)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8940598B2 (en) * 2010-11-03 2015-01-27 Texas Instruments Incorporated Low temperature coefficient resistor in CMOS flow
WO2013009640A2 (en) 2011-07-08 2013-01-17 Skyworks Solutions, Inc. Signal path termination
US9679869B2 (en) * 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US8791719B2 (en) * 2011-10-24 2014-07-29 Skyworks Solutions, Inc. Dual mode power amplifier control interface with a two-mode general purpose input/output interface
US9876478B2 (en) 2011-11-04 2018-01-23 Skyworks Solutions, Inc. Apparatus and methods for wide local area network power amplifiers
CN104011998B (en) 2011-11-04 2016-12-14 天工方案公司 Apparatus and method for power amplifier
KR101899509B1 (en) * 2011-11-11 2018-09-20 스카이워크스 솔루션즈, 인코포레이티드 Flip-chip linear power amplifier with high power added efficiency
KR101921686B1 (en) 2012-06-14 2018-11-26 스카이워크스 솔루션즈, 인코포레이티드 Power amplifier modules including wire bond pad and related systems, devices, and methods
WO2013188694A1 (en) 2012-06-14 2013-12-19 Skyworks Solutions, Inc. Process-compensated hbt power amplifier bias circuits and methods
US9449128B2 (en) * 2012-11-29 2016-09-20 The Mathworks, Inc. Automatic computation of fundamental frequencies and maximum harmonic orders for radio frequency systems
US9444498B2 (en) * 2012-12-03 2016-09-13 Broadcom Corporation Repartitioned transceiver using silicon-on-insulator
US11087995B1 (en) * 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) * 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
CA2814303A1 (en) 2013-04-26 2014-10-26 Cellphone-Mate, Inc. Apparatus and methods for radio frequency signal boosters
US9419568B2 (en) * 2013-06-03 2016-08-16 Skyworks Solutions, Inc. Circuits and methods related to power amplifier efficiency based on multi-harmonic approximation
US9508635B2 (en) * 2013-06-27 2016-11-29 STATS ChipPAC Pte. Ltd. Methods of forming conductive jumper traces
CN105492831B (en) * 2013-08-29 2019-08-27 恩智浦美国有限公司 Module occurs for integrated Solid State microwave power
US9590569B2 (en) * 2014-05-06 2017-03-07 Skyworks Solutions, Inc. Systems, circuits and methods related to low power efficiency improvement in multi-mode multi-band power amplifiers
US9192048B1 (en) 2014-06-20 2015-11-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Bonding pad for printed circuit board and semiconductor chip package using same
US9602064B2 (en) * 2014-06-28 2017-03-21 Skyworks Solutions, Inc. Switchable feedback circuit for radio-frequency power amplifiers
EP2980801A1 (en) 2014-07-28 2016-02-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for estimating noise in an audio signal, noise estimator, audio encoder, audio decoder, and system for transmitting audio signals
US9356560B2 (en) 2014-08-01 2016-05-31 Qualcomm Incorporated Multi-mode integrated power amplifier
US9685918B2 (en) 2014-08-04 2017-06-20 Skyworks Solutions, Inc. Voltage mode power combiner for radio frequency linear power amplifier
US9780730B2 (en) * 2014-09-19 2017-10-03 Mitsubishi Electric Research Laboratories, Inc. Wideband self-envelope tracking RF power amplifier
TWI572171B (en) * 2014-10-29 2017-02-21 絡達科技股份有限公司 Multi-mode/multi-band front-end module
US10868155B2 (en) 2014-11-27 2020-12-15 Murata Manufacturing Co., Ltd. Compound semiconductor device
JP6071009B2 (en) * 2014-11-27 2017-02-01 株式会社村田製作所 Compound semiconductor device
US11508834B2 (en) 2014-11-27 2022-11-22 Murata Manufacturing Co., Ltd. Compound semiconductor device
GB2533767B (en) * 2014-12-16 2019-06-19 Leonardo Mw Ltd Integrated circuits and methods of manufacturing.
US9601477B2 (en) * 2014-12-18 2017-03-21 Marvell World Trade Ltd. Integrated circuit having spare circuit cells
US9621118B2 (en) 2014-12-30 2017-04-11 Skyworks Solutions, Inc. Compression control through power amplifier voltage adjustment
US10102327B2 (en) * 2014-12-31 2018-10-16 Stmicroelectronics, Inc. Integrated circuit layout wiring for multi-core chips
US10097182B2 (en) 2014-12-31 2018-10-09 Stmicroelectronics, Inc. Integrated circuit layout wiring for multi-core chips
US10484826B2 (en) * 2015-02-06 2019-11-19 International Mobile Iot Corp. System and device for internet of things
US9654155B2 (en) * 2015-02-15 2017-05-16 Skyworks Solutions, Inc. Cascode amplifier segmentation for enhanced thermal ruggedness
JP2016149743A (en) * 2015-02-15 2016-08-18 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. Power amplifier reduced in size through elimination of matching network
US9698734B2 (en) 2015-02-15 2017-07-04 Skyworks Solutions, Inc. Power amplification system with adjustable common base bias
US10483926B2 (en) 2015-02-15 2019-11-19 Skyworks Solutions, Inc. Power amplifier module with power supply control
CN109120233B (en) * 2015-02-15 2022-07-01 天工方案公司 Radio frequency amplification system, device and method
US9893684B2 (en) 2015-02-15 2018-02-13 Skyworks Solutions, Inc. Radio-frequency power amplifiers driven by boost converter
US20160270725A1 (en) * 2015-03-16 2016-09-22 Jeffrey Allen Gray Wearable lactate threshold monitor
US10418951B2 (en) * 2015-03-24 2019-09-17 Skyworks Solutions, Inc. Combined output matching network and filter for power amplifier with concurrent functionality
US9741834B2 (en) * 2015-04-02 2017-08-22 Qorvo Us, Inc. Heterojunction bipolar transistor architecture
US9443567B1 (en) * 2015-04-16 2016-09-13 Intel Corporation High speed sense amplifier latch with low power rail-to-rail input common mode range
US20170003733A1 (en) * 2015-04-30 2017-01-05 Skyworks Solutions, Inc. Power amplifier with general purpose input output module
US9859358B2 (en) * 2015-05-26 2018-01-02 Altera Corporation On-die capacitor (ODC) structure
US9608615B2 (en) 2015-06-12 2017-03-28 Cypress Semiconductor Corporation Negative high voltage hot switching circuit
US9899970B2 (en) * 2015-06-18 2018-02-20 Eridan Communications, Inc. Current enhanced driver for high-power solid-state radio frequency power amplifiers
US9543900B1 (en) 2015-06-19 2017-01-10 Qualcomm Incorporated Switchable supply and tunable load impedance power amplifier
US9496969B1 (en) * 2015-06-26 2016-11-15 Freescale Semiconductor, Inc. Double integrator pulse wave shaper apparatus, system and method
CN107852812A (en) * 2015-07-08 2018-03-27 日本电气株式会社 Printed wiring board
US9881884B2 (en) * 2015-08-14 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US9722771B2 (en) * 2015-09-30 2017-08-01 Skyworks Solutions, Inc. Parallel use of serial controls in improved wireless devices and power amplifier modules
TWI588507B (en) * 2015-10-14 2017-06-21 國立成功大學 Radio frequency energy-transmitting apparatus with location detection function and radio frequency energy-harvesting apparatus and radio frequency energy-transmitting method with location detection function
KR20170056391A (en) * 2015-11-13 2017-05-23 삼성전기주식회사 Front end module
US9806674B2 (en) 2015-12-14 2017-10-31 Murata Manufacturing Co., Ltd. Power amplifier circuit
JP2017112588A (en) * 2015-12-14 2017-06-22 株式会社村田製作所 Power amplifier circuit
US11335651B2 (en) * 2015-12-22 2022-05-17 Intel Corporation Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric
US9905678B2 (en) * 2016-02-17 2018-02-27 Qorvo Us, Inc. Semiconductor device with multiple HBTs having different emitter ballast resistances
US9653410B1 (en) * 2016-03-15 2017-05-16 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of manufacture
US9964591B2 (en) 2016-04-19 2018-05-08 International Business Machines Corporation Implementing decreased scan data interdependence in on product multiple input signature register (OPMISR) through PRPG control rotation
JP6620656B2 (en) * 2016-04-20 2019-12-18 三菱電機株式会社 Integrated circuit
JP2017200183A (en) * 2016-04-29 2017-11-02 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. Shielded diversity receiving module
US9923524B2 (en) * 2016-07-20 2018-03-20 Qualcomm Incorporated Digital pre-distortion for multi-antenna systems
JP2018019231A (en) * 2016-07-27 2018-02-01 株式会社村田製作所 Power amplification module
US10880116B2 (en) * 2016-07-28 2020-12-29 Skyworks Solutions, Inc. Multi mode interface and detection circuit
US10218310B2 (en) * 2016-09-09 2019-02-26 Skyworks Solutions, Inc. Power amplifier systems with differential ground
US10374555B2 (en) * 2016-09-14 2019-08-06 Skyworks Solutions, Inc. Radio-frequency amplifier having active gain bypass circuit
US10103135B2 (en) * 2016-09-23 2018-10-16 Qualcomm Incorporated Backside ground plane for integrated circuit
US10177569B2 (en) * 2016-09-28 2019-01-08 Infineon Technologies Ag System and method for power supply ripple compensation
US10230335B2 (en) * 2016-09-30 2019-03-12 Skyworks Solutions, Inc. Temperature compensated power amplifier gain
TWM538242U (en) * 2016-10-13 2017-03-11 Luxnet Corp Double-end driving type high-frequency substrate structure and high-frequency transmission structure comprising the same
CN106549638A (en) 2016-10-31 2017-03-29 唯捷创芯(天津)电子技术股份有限公司 A kind of suppression harmonic wave and spuious radio-frequency power amplifier, chip and communication terminal
TWI633710B (en) * 2017-01-17 2018-08-21 台達電子工業股份有限公司 A polarization-tracking rf power transmitting apparatus, a positioning and polarization-tracking rf energy-transmitting apparatus, an rf energy hunting apparatus and method of rf power transfer the same
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
JP2018152714A (en) * 2017-03-13 2018-09-27 株式会社村田製作所 Power Amplifier Module
US10432247B2 (en) * 2017-03-20 2019-10-01 Intel IP Corporation Sequence triggering in RF front-ends
US10461705B2 (en) * 2017-03-27 2019-10-29 Skyworks Solutions, Inc. Apparatus and methods for oscillation suppression of cascode power amplifiers
JP2020113559A (en) * 2017-03-30 2020-07-27 株式会社村田製作所 Circuit module
JP6571124B2 (en) * 2017-03-30 2019-09-04 太陽誘電株式会社 Manufacturing method of electronic component module
US10666200B2 (en) * 2017-04-04 2020-05-26 Skyworks Solutions, Inc. Apparatus and methods for bias switching of power amplifiers
US10439558B2 (en) * 2017-04-28 2019-10-08 Skyworks Solutions, Inc. Apparatus and methods for power amplifiers with positive envelope feedback
US10418994B1 (en) * 2017-07-12 2019-09-17 Xilinx, Inc. Circuit for and method of extending the bandwidth of a termination block
US10381988B2 (en) * 2017-09-15 2019-08-13 Qualcomm Incorporated Methods and apparatuses for ruggedizing a power amplifier against breakdown using harmonic tuning
US10141303B1 (en) * 2017-09-20 2018-11-27 Cree, Inc. RF amplifier package with biasing strip
CN107707207A (en) * 2017-09-21 2018-02-16 深圳市万联航通电子科技有限公司 Multifrequency multi-standard radio-frequency power amplifier
US10276920B2 (en) * 2017-09-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure, electronic device and method of fabricating package structure
WO2019066977A1 (en) 2017-09-29 2019-04-04 Intel Corporation Electroless metal-defined thin pad first level interconnects for lithographically defined vias
CN109617531B (en) * 2017-10-04 2023-08-25 株式会社村田制作所 Power amplifying circuit
JP2019068404A (en) * 2017-10-04 2019-04-25 株式会社村田製作所 Power amplification circuit
JP2019079872A (en) 2017-10-23 2019-05-23 株式会社村田製作所 Semiconductor device
CN109712943B (en) * 2017-10-26 2020-11-20 联发科技股份有限公司 Semiconductor package assembly
US10250197B1 (en) 2017-11-06 2019-04-02 Nxp Usa, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
EP3480945A1 (en) 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10554177B2 (en) 2017-11-27 2020-02-04 Skyworks Solutions, Inc. Quadrature combined doherty amplifiers
WO2019103899A1 (en) 2017-11-27 2019-05-31 Skyworks Solutions, Inc. Wideband power combiner and splitter
DE102017222284A1 (en) * 2017-12-08 2019-06-13 Robert Bosch Gmbh Field effect transistor arrangement and method for adjusting a drain current of a field effect transistor
CN110277204B (en) * 2018-03-14 2021-12-10 国巨电子（中国）有限公司 Shunt resistor and method for manufacturing the same
US10530306B2 (en) 2018-04-13 2020-01-07 Nxp Usa, Inc. Hybrid power amplifier circuit or system with combination low-pass and high-pass interstage circuitry and method of operating same
US10727894B2 (en) 2018-04-30 2020-07-28 Skyworks Solutions, Inc. Front end systems with switched termination for enhanced intermodulation distortion performance
US10972055B2 (en) * 2018-06-15 2021-04-06 Skyworks Solutions, Inc. Integrated doherty power amplifier
US10593619B1 (en) 2018-08-28 2020-03-17 Nsp Usa, Inc. Transistor shield structure, packaged device, and method of manufacture
CN113056659A (en) * 2018-09-19 2021-06-29 阿卡什系统公司 System and method for satellite communication
US10643676B2 (en) * 2018-09-28 2020-05-05 Western Digital Technologies, Inc. Series resistance in transmission lines for die-to-die communication
US11024541B2 (en) * 2018-10-04 2021-06-01 Qorvo Us, Inc. Process for molding a back side wafer singulation guide
WO2020111321A1 (en) * 2018-11-29 2020-06-04 주식회사 웨이브피아 Method for manufacturing input and output circuit-embedded package for power amplifier
JP6900947B2 (en) * 2018-12-28 2021-07-14 株式会社村田製作所 High frequency module and communication equipment
US11245432B2 (en) 2019-03-06 2022-02-08 Skyworks Solutions, Inc. Radio frequency device with integrated antenna tuner and multiplexer
US11082021B2 (en) 2019-03-06 2021-08-03 Skyworks Solutions, Inc. Advanced gain shaping for envelope tracking power amplifiers
JP2020156048A (en) * 2019-03-22 2020-09-24 株式会社村田製作所 Power amplifier circuit
US11373959B2 (en) * 2019-04-19 2022-06-28 Skyworks Solutions, Inc. Shielding for flip chip devices
US11916517B2 (en) 2019-04-23 2024-02-27 Skyworks Solutions, Inc. Saturation detection of power amplifiers
US10727792B1 (en) * 2019-06-27 2020-07-28 Echowell Electronic Co., Ltd. Vacuum tube and transistor amplifier natural sound field tone dividing system
TWI705742B (en) 2019-07-25 2020-09-21 緯創資通股份有限公司 Circuit board structure and layout structure thereof
CN110444890B (en) * 2019-08-01 2021-02-02 大连交通大学 Antenna matching circuit
WO2021061851A1 (en) 2019-09-27 2021-04-01 Skyworks Solutions, Inc. Power amplifier bias modulation for low bandwidth envelope tracking
JP2021061577A (en) * 2019-10-09 2021-04-15 株式会社村田製作所 High frequency module and communication device
US11264954B2 (en) * 2019-11-14 2022-03-01 Analog Devices, Inc. Thermal temperature sensors for power amplifiers
US11282923B2 (en) 2019-12-09 2022-03-22 Qorvo Us, Inc. Bipolar transistor
TWI742935B (en) * 2019-12-20 2021-10-11 日商村田製作所股份有限公司 Power amplification module
US11817832B2 (en) 2020-01-03 2023-11-14 Skyworks Solutions, Inc. Power amplifier output matching
FR3107628B1 (en) * 2020-02-21 2022-12-02 St Microelectronics Grenoble 2 Drift compensation
TWI785503B (en) * 2020-03-11 2022-12-01 日商村田製作所股份有限公司 Rf circuit module and manufacturing method therefor
JP2021158556A (en) * 2020-03-27 2021-10-07 株式会社村田製作所 High-frequency module and communication device
JP2021164022A (en) * 2020-03-31 2021-10-11 株式会社村田製作所 High-frequency module and communication device
US11545404B2 (en) * 2020-05-06 2023-01-03 Qualcomm Incorporated III-V compound semiconductor dies with stress-treated inactive surfaces to avoid packaging-induced fractures, and related methods
TWI767243B (en) * 2020-05-29 2022-06-11 矽品精密工業股份有限公司 Electronic package
US11855595B2 (en) 2020-06-05 2023-12-26 Skyworks Solutions, Inc. Composite cascode power amplifiers for envelope tracking applications
US11482975B2 (en) 2020-06-05 2022-10-25 Skyworks Solutions, Inc. Power amplifiers with adaptive bias for envelope tracking applications
US11302645B2 (en) 2020-06-30 2022-04-12 Western Digital Technologies, Inc. Printed circuit board compensation structure for high bandwidth and high die-count memory stacks
US11764738B2 (en) 2020-09-24 2023-09-19 Analog Devices International Unlimited Company Segmented power amplifier arrangements with feedforward adaptive bias circuits
US11558158B2 (en) * 2020-11-10 2023-01-17 Intel Corporation Methods and devices for dynamically avoiding radio frequency interference
JP2022080639A (en) * 2020-11-18 2022-05-30 株式会社村田製作所 Semiconductor device
WO2022124035A1 (en) * 2020-12-11 2022-06-16 株式会社村田製作所 High-frequency module and communication device
US11423204B1 (en) * 2021-04-14 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited System and method for back side signal routing
US20220360223A1 (en) * 2021-05-04 2022-11-10 Epirus, Inc. Systems and methods for dynamically adjusting parameters of an active electrical device
KR102342056B1 (en) 2021-06-07 2021-12-22 정현인 Reflective light-based stereoscopic sheets
CN115995687A (en) * 2021-10-20 2023-04-21 群创光电股份有限公司 Electronic device
CN117394808B (en) * 2023-12-06 2024-03-26 烟台睿创微纳技术股份有限公司 Power amplifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378922A (en) * 1992-09-30 1995-01-03 Rockwell International Corporation HBT with semiconductor ballasting
US20070194852A1 (en) * 2006-02-17 2007-08-23 Hirokazu Tsuromaki Radio frequency power amplifying module with hetero junction bipolar transistor

Family Cites Families (322)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721746A (en) 1971-10-01 1973-03-20 Motorola Inc Shielding techniques for r.f. circuitry
US4151637A (en) 1978-02-07 1979-05-01 Universal Instruments Corporation Dip component lead cut and clinch apparatus
US4241497A (en) 1979-01-11 1980-12-30 The Singer Company P.C. Board lead trimming method
US4245385A (en) 1979-07-09 1981-01-20 Universal Instruments Corporation Radial lead component insertion machine
US4447945A (en) 1980-05-01 1984-05-15 Contact Systems, Inc. Cut and clinch mechanism for use in electrical component assembly apparatus
JPS6114599A (en) 1984-06-30 1986-01-22 日本碍子株式会社 Continuous melter for waste
GB8510621D0 (en) 1985-04-26 1985-06-05 Pickering Electronics Ltd Potted electronic components
FR2598258B1 (en) 1986-04-30 1988-10-07 Aix Les Bains Composants METHOD OF ENCAPSULATING INTEGRATED CIRCUITS.
JPS63185177A (en) * 1987-01-27 1988-07-30 Sony Corp Frequency modulation circuit
JPS63224358A (en) * 1987-03-13 1988-09-19 Toshiba Corp High frequency power amplifier
JPH01125856A (en) * 1987-11-11 1989-05-18 Hitachi Ltd Semiconductor device
JP2667863B2 (en) * 1988-03-23 1997-10-27 株式会社日立製作所 Manufacturing method of bipolar transistor
JPH01264261A (en) * 1988-04-15 1989-10-20 Toshiba Corp Heterojunction bipolar transistor
JPH0368166A (en) * 1989-08-05 1991-03-25 Matsushita Electric Ind Co Ltd Compound semiconductor device
JPH03165058A (en) 1989-11-24 1991-07-17 Mitsubishi Electric Corp Semiconductor device
US5049979A (en) 1990-06-18 1991-09-17 Microelectronics And Computer Technology Corporation Combined flat capacitor and tab integrated circuit chip and method
JPH0458596A (en) 1990-06-28 1992-02-25 Nippon Telegr & Teleph Corp <Ntt> Electromagnetic shield
US5095285A (en) * 1990-08-31 1992-03-10 Texas Instruments Incorporated Monolithically realizable harmonic trapping circuit
JP2510311Y2 (en) 1990-09-27 1996-09-11 株式会社アイチコーポレーション Leveling equipment for aerial work vehicles
US5166772A (en) 1991-02-22 1992-11-24 Motorola, Inc. Transfer molded semiconductor device package with integral shield
US5266819A (en) 1991-05-13 1993-11-30 Rockwell International Corporation Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method
US5166864A (en) 1991-05-17 1992-11-24 Hughes Aircraft Company Protected circuit card assembly and process
GB9126616D0 (en) 1991-12-16 1992-02-12 Texas Instruments Ltd Improvements in or relating to amplifiers
JPH07507180A (en) 1992-02-25 1995-08-03 マイクロユニティ　システムズ　エンジニアリング，インコーポレイテッド Bipolar junction transistor suppresses Kirk effect
US5303412A (en) 1992-03-13 1994-04-12 Massachusetts Institute Of Technology Composite direct digital synthesizer
FR2693770B1 (en) 1992-07-15 1994-10-14 Europ Propulsion Closed electron drift plasma engine.
JP3323544B2 (en) * 1992-08-21 2002-09-09 株式会社日立製作所 Semiconductor device
US5268315A (en) 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
US5300895A (en) 1992-10-01 1994-04-05 Texas Instruments Incorporated Method for terminating harmonics of transistors
US5249728A (en) 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
US5355016A (en) 1993-05-03 1994-10-11 Motorola, Inc. Shielded EPROM package
JPH0746007A (en) * 1993-07-28 1995-02-14 Matsushita Electric Ind Co Ltd Substrate for electric power and electric power amplifier for high frequency
US5428508A (en) 1994-04-29 1995-06-27 Motorola, Inc. Method for providing electromagnetic shielding of an electrical circuit
US5445976A (en) 1994-08-09 1995-08-29 Texas Instruments Incorporated Method for producing bipolar transistor having reduced base-collector capacitance
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
US5581115A (en) 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics
JPH08222885A (en) 1995-02-16 1996-08-30 Sumise Device:Kk Electromagnetic shielding film for package and its formation
JP3368451B2 (en) 1995-03-17 2003-01-20 富士通株式会社 Circuit board manufacturing method and circuit inspection device
US6242842B1 (en) 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
JPH09213730A (en) 1996-02-01 1997-08-15 Matsushita Electron Corp High-frequency module substrate and high-frequency power amplification module having it
US5748042A (en) 1996-07-26 1998-05-05 Motorola, Inc. Method for altering a difference frequency signal and amplifier circuit thereof
US6108726A (en) 1996-09-13 2000-08-22 Advanced Micro Devices. Inc. Reducing the pin count within a switching element through the use of a multiplexer
SE511426C2 (en) 1996-10-28 1999-09-27 Ericsson Telefon Ab L M Apparatus and method of shielding electronics
US6150193A (en) 1996-10-31 2000-11-21 Amkor Technology, Inc. RF shielded device
US5834975A (en) * 1997-03-12 1998-11-10 Rockwell Science Center, Llc Integrated variable gain power amplifier and method
JP3462760B2 (en) 1997-09-04 2003-11-05 三洋電機株式会社 Distributed constant circuit, high frequency circuit, bias application circuit, and impedance adjustment method
US6028011A (en) 1997-10-13 2000-02-22 Matsushita Electric Industrial Co., Ltd. Method of forming electric pad of semiconductor device and method of forming solder bump
US6350951B1 (en) 1997-12-29 2002-02-26 Intel Corporation Electric shielding of on-board devices
US6566596B1 (en) 1997-12-29 2003-05-20 Intel Corporation Magnetic and electric shielding of on-board devices
TW401724B (en) 1998-01-27 2000-08-11 Hitachi Cable Wiring board, semiconductor, electronic device, and circuit board for electronic parts
US6075995A (en) 1998-01-30 2000-06-13 Conexant Systems, Inc. Amplifier module with two power amplifiers for dual band cellular phones
US6759597B1 (en) 1998-02-02 2004-07-06 International Business Machines Corporation Wire bonding to dual metal covered pad surfaces
JP3594482B2 (en) * 1998-04-02 2004-12-02 三菱電機株式会社 Heterojunction bipolar transistor
US6384688B1 (en) 1998-07-08 2002-05-07 Hitachi, Ltd. High-frequency power amplifier module
US6586782B1 (en) 1998-07-30 2003-07-01 Skyworks Solutions, Inc. Transistor layout having a heat dissipative emitter
US6236071B1 (en) 1998-07-30 2001-05-22 Conexant Systems, Inc. Transistor having a novel layout and an emitter having more than one feed point
US6137693A (en) 1998-07-31 2000-10-24 Agilent Technologies Inc. High-frequency electronic package with arbitrarily-shaped interconnects and integral shielding
US6233440B1 (en) 1998-08-05 2001-05-15 Triquint Semiconductor, Inc. RF power amplifier with variable bias current
US6092281A (en) 1998-08-28 2000-07-25 Amkor Technology, Inc. Electromagnetic interference shield driver and method
AU2341900A (en) 1998-09-03 2000-04-10 Lockheed Martin Corporation Automated fuel tank assembly system and method
US6202294B1 (en) 1998-09-25 2001-03-20 Lucent Technologies Inc. EMI/RFI shield assembly cover removal tool
JP3888785B2 (en) * 1998-09-28 2007-03-07 三菱電機株式会社 High frequency power amplifier
JP3275851B2 (en) 1998-10-13 2002-04-22 松下電器産業株式会社 High frequency integrated circuit
US6885275B1 (en) 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6275687B1 (en) 1998-11-30 2001-08-14 Conexant Systems, Inc. Apparatus and method for implementing a low-noise amplifier and mixer
US6455354B1 (en) 1998-12-30 2002-09-24 Micron Technology, Inc. Method of fabricating tape attachment chip-on-board assemblies
US6201454B1 (en) 1999-03-30 2001-03-13 The Whitaker Corporation Compensation structure for a bond wire at high frequency operation
US6563145B1 (en) 1999-04-19 2003-05-13 Chang Charles E Methods and apparatus for a composite collector double heterojunction bipolar transistor
US6362089B1 (en) 1999-04-19 2002-03-26 Motorola, Inc. Method for processing a semiconductor substrate having a copper surface disposed thereon and structure formed
JP2000307289A (en) 1999-04-19 2000-11-02 Nec Corp Electronic part assembly
US6194968B1 (en) 1999-05-10 2001-02-27 Tyco Electronics Logistics Ag Temperature and process compensating circuit and controller for an RF power amplifier
US7265618B1 (en) 2000-05-04 2007-09-04 Matsushita Electric Industrial Co., Ltd. RF power amplifier having high power-added efficiency
US6462436B1 (en) 1999-08-13 2002-10-08 Avaya Technology Corp. Economical packaging for EMI shields on PCB
JP2001127071A (en) * 1999-08-19 2001-05-11 Hitachi Ltd Semiconductor device and its manufacturing method
US6593658B2 (en) 1999-09-09 2003-07-15 Siliconware Precision Industries, Co., Ltd. Chip package capable of reducing moisture penetration
JP3859403B2 (en) 1999-09-22 2006-12-20 株式会社東芝 Semiconductor device and manufacturing method thereof
US6534192B1 (en) 1999-09-24 2003-03-18 Lucent Technologies Inc. Multi-purpose finish for printed wiring boards and method of manufacture of such boards
FR2799337B1 (en) 1999-10-05 2002-01-11 St Microelectronics Sa METHOD FOR MAKING ELECTRICAL CONNECTIONS ON THE SURFACE OF A SEMICONDUCTOR PACKAGE WITH ELECTRICAL CONNECTION DROPS
US20070176287A1 (en) 1999-11-05 2007-08-02 Crowley Sean T Thin integrated circuit device packages for improved radio frequency performance
JP2001177060A (en) 1999-12-14 2001-06-29 Nec Corp Monolithic integrated circuit device and its manufacturing method
US6236274B1 (en) * 2000-01-04 2001-05-22 Industrial Technology Research Institute Second harmonic terminations for high efficiency radio frequency dual-band power amplifier
US6601124B1 (en) 2000-02-14 2003-07-29 International Business Machines Corporation Universal interface for selectively coupling to a computer port type and method therefor
WO2001084631A1 (en) 2000-04-27 2001-11-08 En Jun Zhu Improved structure for a semiconductor device
US6956283B1 (en) 2000-05-16 2005-10-18 Peterson Kenneth A Encapsulants for protecting MEMS devices during post-packaging release etch
US6573599B1 (en) 2000-05-26 2003-06-03 Skyworks Solutions, Inc. Electrical contact for compound semiconductor device and method for forming same
TW455964B (en) 2000-07-18 2001-09-21 Siliconware Precision Industries Co Ltd Multi-chip module package structure with stacked chips
WO2002017333A1 (en) 2000-08-18 2002-02-28 Mitsubishi Denki Kabushiki Kaisha Shield cable, method of manufacturing shield cable, and discharge lamp lighting device using shield cable
US6757181B1 (en) 2000-08-22 2004-06-29 Skyworks Solutions, Inc. Molded shield structures and method for their fabrication
CN1168204C (en) 2000-09-09 2004-09-22 王仲季 Dynamicaly synchronous voltage-biased power amplifier
US6858522B1 (en) 2000-09-28 2005-02-22 Skyworks Solutions, Inc. Electrical contact for compound semiconductor device and method for forming same
US6426881B1 (en) 2000-10-04 2002-07-30 Arthur A. Kurz Shielding arrangement for inter-component shielding in electronic devices
DE10152408A1 (en) 2000-10-25 2002-05-16 Matsushita Electric Ind Co Ltd System for automatic mounting of electronic components onto a circuit board uses camera scanning of board
US6847060B2 (en) 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer
JP2004521485A (en) 2000-11-27 2004-07-15 コピン コーポレーション Bipolar transistor with lattice matched base layer
US7345327B2 (en) 2000-11-27 2008-03-18 Kopin Corporation Bipolar transistor
US6577199B2 (en) 2000-12-07 2003-06-10 Ericsson, Inc. Harmonic matching network for a saturated amplifier
ATE298342T1 (en) 2000-12-12 2005-07-15 Sosei Co Ltd METHOD FOR PRODUCING SUBSTANCE GM-95
US6445069B1 (en) 2001-01-22 2002-09-03 Flip Chip Technologies, L.L.C. Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor
US7379475B2 (en) 2002-01-25 2008-05-27 Nvidia Corporation Communications processor
KR101046876B1 (en) 2001-01-31 2011-07-05 가부시키가이샤 히타치세이사쿠쇼 Data Processing System and Data Processor
US6900383B2 (en) 2001-03-19 2005-05-31 Hewlett-Packard Development Company, L.P. Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces
US7333778B2 (en) 2001-03-21 2008-02-19 Ericsson Inc. System and method for current-mode amplitude modulation
US6548364B2 (en) * 2001-03-29 2003-04-15 Sharp Laboratories Of America, Inc. Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same
JP2002319589A (en) * 2001-04-20 2002-10-31 Hitachi Ltd Semiconductor device and power amplifier comprising it
US6459104B1 (en) 2001-05-10 2002-10-01 Newport Fab Method for fabricating lateral PNP heterojunction bipolar transistor and related structure
WO2002096166A1 (en) 2001-05-18 2002-11-28 Corporation For National Research Initiatives Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates
US6678513B2 (en) 2001-05-31 2004-01-13 Skyworks Solutions, Inc. Non-linear transistor circuits with thermal stability
US20030002271A1 (en) 2001-06-27 2003-01-02 Nokia Corporation Integrated EMC shield for integrated circuits and multiple chip modules
JP2003023239A (en) * 2001-07-05 2003-01-24 Sumitomo Electric Ind Ltd Circuit board and its manufacturing method and high output module
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
JP2003051567A (en) * 2001-08-03 2003-02-21 Sony Corp High-frequency module substrate unit therefor and manufacturing method therefor
US6856007B2 (en) 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
JP3507828B2 (en) * 2001-09-11 2004-03-15 シャープ株式会社 Heterojunction bipolar transistor and method of manufacturing the same
US6750546B1 (en) 2001-11-05 2004-06-15 Skyworks Solutions, Inc. Flip-chip leadframe package
US6486549B1 (en) 2001-11-10 2002-11-26 Bridge Semiconductor Corporation Semiconductor module with encapsulant base
JP3674780B2 (en) 2001-11-29 2005-07-20 ユーディナデバイス株式会社 High frequency semiconductor device
US6656809B2 (en) 2002-01-15 2003-12-02 International Business Machines Corporation Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
US6797995B2 (en) 2002-02-14 2004-09-28 Rockwell Scientific Licensing, Llc Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector
US6605825B1 (en) 2002-02-14 2003-08-12 Innovative Technology Licensing, Llc Bipolar transistor characterization apparatus with lateral test probe pads
TWI239578B (en) 2002-02-21 2005-09-11 Advanced Semiconductor Eng Manufacturing process of bump
US6621140B1 (en) 2002-02-25 2003-09-16 Rf Micro Devices, Inc. Leadframe inductors
JP2003249607A (en) 2002-02-26 2003-09-05 Seiko Epson Corp Semiconductor device and manufacturing method therefor, circuit board and electronic device
US7138872B2 (en) 2002-03-21 2006-11-21 Koninklijke Philips Electronics N.V. Power amplifier device
TW538481B (en) 2002-06-04 2003-06-21 Univ Nat Cheng Kung InGaP/AlGaAs/GaAs hetero-junction bipolar transistor with zero conduction band discontinuity
US6806767B2 (en) * 2002-07-09 2004-10-19 Anadigics, Inc. Power amplifier with load switching circuit
JP3663397B2 (en) * 2002-08-30 2005-06-22 株式会社東芝 High frequency power amplifier
KR100922423B1 (en) 2002-09-06 2009-10-16 페어차일드코리아반도체 주식회사 Bipolar transistor and method for manufacturing the same
US6731174B2 (en) * 2002-09-12 2004-05-04 Motorola, Inc. Radio frequency power amplifier device
US6949776B2 (en) 2002-09-26 2005-09-27 Rockwell Scientific Licensing, Llc Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
US20040188712A1 (en) 2002-10-08 2004-09-30 Eic Corporation Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
US6994901B1 (en) 2002-11-12 2006-02-07 Dana Corporation Heat shield having a fold-over edge crimp with variable width and method of making same
US6894463B2 (en) 2002-11-14 2005-05-17 Fyre Storm, Inc. Switching power converter controller configured to provide load shedding
US7333788B2 (en) 2002-12-20 2008-02-19 Texas Instruments Incorporated Method for calibrating automatic gain control in wireless devices
TW200411871A (en) 2002-12-30 2004-07-01 Advanced Semiconductor Eng Thermal-enhance package and manufacturing method thereof
TW565009U (en) 2003-01-20 2003-12-01 Benq Corp Electronic module having ball grid array
TWI235469B (en) 2003-02-07 2005-07-01 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package with EMI shielding
US6873043B2 (en) 2003-03-10 2005-03-29 Delphi Technologies, Inc. Electronic assembly having electrically-isolated heat-conductive structure
JP2004289640A (en) * 2003-03-24 2004-10-14 Ube Ind Ltd Semiconductor circuit
KR100531373B1 (en) 2003-03-28 2005-11-28 엘지전자 주식회사 Power amplifier
US7443693B2 (en) 2003-04-15 2008-10-28 Wavezero, Inc. Electromagnetic interference shielding for a printed circuit board
US6797996B1 (en) 2003-05-27 2004-09-28 Matsushita Electric Industrial Co., Ltd. Compound semiconductor device and method for fabricating the same
US7038250B2 (en) 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
CN1810068A (en) 2003-06-19 2006-07-26 波零公司 EMI absorbing shielding for a printed circuit board
US6974776B2 (en) 2003-07-01 2005-12-13 Freescale Semiconductor, Inc. Activation plate for electroless and immersion plating of integrated circuits
US20050001316A1 (en) 2003-07-01 2005-01-06 Motorola, Inc. Corrosion-resistant bond pad and integrated device
US20070220499A1 (en) 2003-07-23 2007-09-20 Silicon Laboratories Inc. USB tool stick with multiple processors
US6858887B1 (en) 2003-07-30 2005-02-22 Innovative Technology Licensing Llc BJT device configuration and fabrication method with reduced emitter width
US7170394B2 (en) 2003-07-31 2007-01-30 Agilent Technologies, Inc. Remote current sensing and communication over single pair of power feed wires
TW200518345A (en) * 2003-08-08 2005-06-01 Renesas Tech Corp Semiconductor device
US7088009B2 (en) 2003-08-20 2006-08-08 Freescale Semiconductor, Inc. Wirebonded assemblage method and apparatus
US7030469B2 (en) 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
US7409200B2 (en) * 2003-10-08 2008-08-05 Sige Semiconductor Inc. Module integration integrated circuits
JP2005143079A (en) 2003-10-14 2005-06-02 Matsushita Electric Ind Co Ltd High-frequency power amplifier
US6906359B2 (en) 2003-10-22 2005-06-14 Skyworks Solutions, Inc. BiFET including a FET having increased linearity and manufacturability
US7145385B2 (en) 2003-12-05 2006-12-05 Telefonaktiebolaget Lm Ericsson (Publ) Single chip power amplifier and envelope modulator
CN1914791A (en) 2003-12-05 2007-02-14 艾利森电话股份有限公司 Single chip power amplifier and envelope modulator
US7502601B2 (en) 2003-12-22 2009-03-10 Black Sand Technologies, Inc. Power amplifier with digital power control and associated methods
KR100586737B1 (en) 2003-12-26 2006-06-08 한국전자통신연구원 NMOS DEVICE, PMOS DEVICE AND SiGe BiCMOS DEVICE ON SOI SUBSTRATE AND METHOD OF FABRICATING THE SAME
US7284170B2 (en) 2004-01-05 2007-10-16 Texas Instruments Incorporated JTAG circuit transferring data between devices on TMS terminals
US8159048B2 (en) 2004-01-30 2012-04-17 Triquint Semiconductor, Inc. Bipolar junction transistor geometry
JP2005217887A (en) 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd Variable gain circuit
US8399972B2 (en) 2004-03-04 2013-03-19 Skyworks Solutions, Inc. Overmolded semiconductor package with a wirebond cage for EMI shielding
US20080112151A1 (en) 2004-03-04 2008-05-15 Skyworks Solutions, Inc. Overmolded electronic module with an integrated electromagnetic shield using SMT shield wall components
US7198987B1 (en) 2004-03-04 2007-04-03 Skyworks Solutions, Inc. Overmolded semiconductor package with an integrated EMI and RFI shield
US20100253435A1 (en) 2004-03-18 2010-10-07 Ikuroh Ichitsubo Rf power amplifier circuit utilizing bondwires in impedance matching
JP2004343739A (en) 2004-04-23 2004-12-02 Matsushita Electric Works Ltd Television switch module
US6974724B2 (en) 2004-04-28 2005-12-13 Nokia Corporation Shielded laminated structure with embedded chips
US7900065B2 (en) 2004-06-04 2011-03-01 Broadcom Corporation Method and system for monitoring module power status in a communication device
JP2006013566A (en) 2004-06-22 2006-01-12 Renesas Technology Corp Electronic part for high-frequency power amplification
US7687886B2 (en) 2004-08-19 2010-03-30 Microlink Devices, Inc. High on-state breakdown heterojunction bipolar transistor
EP1797617A4 (en) 2004-10-01 2009-08-12 Rochemont L Pierre De Ceramic antenna module and methods of manufacture thereof
WO2006040847A1 (en) * 2004-10-14 2006-04-20 Ibiden Co., Ltd. Printed wiring board and method for manufacturing printed wiring board
TW200616093A (en) * 2004-10-20 2006-05-16 Kopin Corp Bipolar transistor with graded base layer
US7142058B2 (en) 2004-11-09 2006-11-28 Freescale Semiconductor, Inc. On-chip temperature compensation circuit for an electronic device
US7288940B2 (en) 2004-12-06 2007-10-30 Analog Devices, Inc. Galvanically isolated signal conditioning system
US7238565B2 (en) 2004-12-08 2007-07-03 International Business Machines Corporation Methodology for recovery of hot carrier induced degradation in bipolar devices
JP2006180151A (en) 2004-12-22 2006-07-06 Renesas Technology Corp Power amplifier module and its manufacturing method
US20060138650A1 (en) 2004-12-28 2006-06-29 Freescale Semiconductor, Inc. Integrated circuit packaging device and method for matching impedance
US7633170B2 (en) 2005-01-05 2009-12-15 Advanced Semiconductor Engineering, Inc. Semiconductor device package and manufacturing method thereof
US20100089529A1 (en) 2005-01-12 2010-04-15 Inverness Medical Switzerland Gmbh Microfluidic devices and production methods therefor
US8081928B2 (en) 2005-02-03 2011-12-20 Peregrine Semiconductor Corporation Canceling harmonics in semiconductor RF switches
US7640379B2 (en) 2005-02-12 2009-12-29 Broadcom Corporation System method for I/O pads in mobile multimedia processor (MMP) that has bypass mode wherein data is passed through without being processed by MMP
US7288991B2 (en) 2005-02-17 2007-10-30 Skyworks Solutions, Inc. Power control circuit for accurate control of power amplifier output power
US7563713B2 (en) 2005-02-23 2009-07-21 Teledyne Scientific & Imaging, Llc Semiconductor devices having plated contacts, and methods of manufacturing the same
JP4843229B2 (en) 2005-02-23 2011-12-21 株式会社東芝 Manufacturing method of semiconductor device
JP4558539B2 (en) 2005-03-09 2010-10-06 日立協和エンジニアリング株式会社 Electronic circuit board, electronic circuit, method for manufacturing electronic circuit board, and method for manufacturing electronic circuit
US7546402B2 (en) 2005-03-24 2009-06-09 Sunplus Technology Co., Ltd. Optical storage system comprising interface for transferring data
JP2006279316A (en) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd Switch circuit device
KR100677816B1 (en) 2005-03-28 2007-02-02 산요덴키가부시키가이샤 Active device and switch circuit apparatus
TW200637139A (en) 2005-04-06 2006-10-16 Richwave Technology Corp Adaptive linear biasing circuit
US20060255102A1 (en) 2005-05-11 2006-11-16 Snyder Rick B Technique for defining a wettable solder joint area for an electronic assembly substrate
JP2007031826A (en) * 2005-06-23 2007-02-08 Hitachi Chem Co Ltd Connection terminal and substrate for mounting semiconductor having the same
JP5106758B2 (en) 2005-06-28 2012-12-26 ローム株式会社 Semiconductor device
FR2888664B1 (en) 2005-07-18 2008-05-02 Centre Nat Rech Scient METHOD FOR MAKING A BIPOLAR HETEROJUNCTION TRANSISTOR
US7372334B2 (en) 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7439098B2 (en) * 2005-09-09 2008-10-21 Advanced Semiconductor Engineering, Inc. Semiconductor package for encapsulating multiple dies and method of manufacturing the same
US20070057731A1 (en) 2005-09-15 2007-03-15 Le Phuong T On-chip harmonic termination for RF power amplifier applications
US20070093229A1 (en) 2005-10-20 2007-04-26 Takehiko Yamakawa Complex RF device and method for manufacturing the same
KR101205324B1 (en) 2005-11-25 2012-11-28 삼성전자주식회사 Methods for controlling power of system with serial interface manner
KR100746824B1 (en) 2005-12-16 2007-08-06 동부일렉트로닉스 주식회사 Pad structure of semiconductor device and manufacturing method therefor
JP2007173624A (en) 2005-12-22 2007-07-05 Matsushita Electric Ind Co Ltd Hetero-junction bipolar transistor and method of manufacturing same
US7411458B2 (en) * 2006-02-01 2008-08-12 Motorola, Inc. Method and apparatus for controlling an output voltage in a power amplifier
JP2007221080A (en) * 2006-02-14 2007-08-30 Zycube:Kk Semiconductor device, and method for manufacturing same
KR101260066B1 (en) 2006-02-17 2013-04-30 삼성전자주식회사 Computer system having serial and parallel interfaces
JP4892253B2 (en) 2006-02-28 2012-03-07 ルネサスエレクトロニクス株式会社 Electronic equipment
US7692295B2 (en) 2006-03-31 2010-04-06 Intel Corporation Single package wireless communication device
US7844286B1 (en) 2006-03-31 2010-11-30 At&T Mobility Ii Llc Emergency notification system for a portable device
KR101383480B1 (en) 2006-04-24 2014-04-14 파커비전, 인크. Systems and methods of rf power transmission, modulation, and amplification
US8310060B1 (en) 2006-04-28 2012-11-13 Utac Thai Limited Lead frame land grid array
TW200849556A (en) 2006-06-14 2008-12-16 Nxp Bv Semiconductor device and method of manufacturing such a device
US7598827B2 (en) * 2006-06-19 2009-10-06 Maxim Integrated Products Harmonic termination of power amplifiers using BAW filter output matching circuits
US20070296583A1 (en) * 2006-06-21 2007-12-27 Broadcom Corporation, A California Corporation Integrated circuit assembly including RFID and components thereof
JP2008010552A (en) * 2006-06-28 2008-01-17 Nec Electronics Corp Power amplifier module
JP2008013586A (en) 2006-06-30 2008-01-24 Pentel Corp Oily ink composition for ballpoint pen
US20080014678A1 (en) 2006-07-14 2008-01-17 Texas Instruments Incorporated System and method of attenuating electromagnetic interference with a grounded top film
US8160518B2 (en) 2006-08-10 2012-04-17 Freescale Semiconductor, Inc. Multi-mode transceiver having tunable harmonic termination circuit and method therefor
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
CN101162928A (en) 2006-10-13 2008-04-16 松下电器产业株式会社 High frequency power amplifier
KR100781905B1 (en) * 2006-10-25 2007-12-04 한국전자통신연구원 Image sensor with hetero junction bipolar transistor and fabricatin method of it
JP5160071B2 (en) * 2006-11-16 2013-03-13 ルネサスエレクトロニクス株式会社 Heterojunction bipolar transistor
US7729674B2 (en) * 2007-01-09 2010-06-01 Skyworks Solutions, Inc. Multiband or multimode receiver with shared bias circuit
US8274162B2 (en) 2007-01-20 2012-09-25 Triquint Semiconductor, Inc. Apparatus and method for reduced delamination of an integrated circuit module
EP2115869B1 (en) * 2007-01-25 2014-02-12 Skyworks Solutions, Inc. Multimode amplifier for operation in linear and saturated modes
US7643800B2 (en) 2007-01-30 2010-01-05 Broadcom Corporation Transmit power management for a communication device and method for use therewith
EP2131492B1 (en) 2007-01-30 2012-07-18 Renesas Electronics Corporation Rf amplification device
JP4935828B2 (en) 2007-02-01 2012-05-23 株式会社村田製作所 Chip element and manufacturing method thereof
US7867806B2 (en) 2007-02-26 2011-01-11 Flextronics Ap, Llc Electronic component structure and method of making
US7554407B2 (en) 2007-03-07 2009-06-30 Fairchild Semiconductor Corporation Multi-mode power amplifier with low gain variation over temperature
US7898066B1 (en) 2007-05-25 2011-03-01 Amkor Technology, Inc. Semiconductor device having EMI shielding and method therefor
US8010149B2 (en) * 2007-05-29 2011-08-30 Broadcom Corporation Multi-mode IC with multiple processing cores
JP4524298B2 (en) 2007-06-04 2010-08-11 パナソニック株式会社 Manufacturing method of semiconductor device
US20080307240A1 (en) 2007-06-08 2008-12-11 Texas Instruments Incorporated Power management electronic circuits, systems, and methods and processes of manufacture
WO2008156565A1 (en) 2007-06-20 2008-12-24 Skyworks Solutions, Inc. Semiconductor die with backside passive device integration
TWI346449B (en) * 2007-08-16 2011-08-01 Ind Tech Res Inst Power amplifier circuit for multi-frequencies and multi-modes and method for operating the same
US7928574B2 (en) 2007-08-22 2011-04-19 Texas Instruments Incorporated Semiconductor package having buss-less substrate
US8049531B2 (en) 2007-09-14 2011-11-01 Agate Logic, Inc. General purpose input/output system and method
GB2453115A (en) 2007-09-25 2009-04-01 Filtronic Compound Semiconduct HBT and FET BiFET hetrostructure and substrate with etch stop layers
US7911803B2 (en) 2007-10-16 2011-03-22 International Business Machines Corporation Current distribution structure and method
US8359071B2 (en) 2007-10-31 2013-01-22 Hewlett-Packard Development Company, L.P. Power management techniques for a universal serial bus
US8060681B2 (en) 2007-11-27 2011-11-15 Microsoft Corporation Interface protocol and API for a wireless transceiver
US7911271B1 (en) * 2007-12-14 2011-03-22 Pengcheng Jia Hybrid broadband power amplifier with capacitor matching network
JP5204499B2 (en) * 2008-01-31 2013-06-05 京セラ株式会社 amplifier
US7978031B2 (en) 2008-01-31 2011-07-12 Tdk Corporation High frequency module provided with power amplifier
US7733118B2 (en) 2008-03-06 2010-06-08 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit
JP5042894B2 (en) * 2008-03-19 2012-10-03 松田産業株式会社 Electronic component and manufacturing method thereof
JP5131540B2 (en) * 2008-05-20 2013-01-30 株式会社村田製作所 RF power amplifier and RF power amplifier
US8237229B2 (en) 2008-05-22 2012-08-07 Stmicroelectronics Inc. Method and apparatus for buried-channel semiconductor device
US7618846B1 (en) 2008-06-16 2009-11-17 Stats Chippac, Ltd. Semiconductor device and method of forming shielding along a profile disposed in peripheral region around the device
US7852281B2 (en) 2008-06-30 2010-12-14 Intel Corporation Integrated high performance package systems for mm-wave array applications
US7872523B2 (en) 2008-07-01 2011-01-18 Mks Instruments, Inc. Radio frequency (RF) envelope pulsing using phase switching of switch-mode power amplifiers
US8324721B2 (en) * 2008-07-01 2012-12-04 Texas Instruments Incorporated Integrated shunt resistor with external contact in a semiconductor package
KR101533866B1 (en) 2008-07-31 2015-07-03 스카이워크스 솔루션즈, 인코포레이티드 Semiconductor package with integrated interference shielding and method of manufacture thereof
US8373264B2 (en) 2008-07-31 2013-02-12 Skyworks Solutions, Inc. Semiconductor package with integrated interference shielding and method of manufacture thereof
WO2010024746A1 (en) * 2008-09-01 2010-03-04 Telefonaktiebolaget L M Ericsson (Publ) Hybrid class amplifier
US7974306B2 (en) 2008-09-06 2011-07-05 Universal Scientific Industrial (Shanghai) Co., Ltd. Signal transferring device
US7782134B2 (en) 2008-09-09 2010-08-24 Quantance, Inc. RF power amplifier system with impedance modulation
JP5405785B2 (en) 2008-09-19 2014-02-05 ルネサスエレクトロニクス株式会社 Semiconductor device
US7755107B2 (en) 2008-09-24 2010-07-13 Skyworks Solutions, Inc. Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels
US7948064B2 (en) 2008-09-30 2011-05-24 Infineon Technologies Ag System on a chip with on-chip RF shield
CN101478292A (en) 2008-11-25 2009-07-08 锐迪科微电子（上海）有限公司 Radio frequency power amplifier circuit chip
US8129824B1 (en) 2008-12-03 2012-03-06 Amkor Technology, Inc. Shielding for a semiconductor package
JP2010171037A (en) 2009-01-20 2010-08-05 Renesas Technology Corp Semiconductor device
TW201034540A (en) 2009-03-02 2010-09-16 Chung-Cheng Wang A printing circuit board and manufacturing method(s) for making the same of
KR20100103015A (en) 2009-03-12 2010-09-27 엘지이노텍 주식회사 Lead frame and method for manufacturing the same
CN102349329A (en) 2009-03-12 2012-02-08 交互数字专利控股公司 Method and apparatus for performing component carrier-specific reconfiguration
US8026745B2 (en) 2009-03-16 2011-09-27 Apple Inc. Input/output driver with controlled transistor voltages
JP2010219210A (en) * 2009-03-16 2010-09-30 Renesas Electronics Corp Semiconductor device, and method of manufacturing the same
CN101505178B (en) 2009-03-17 2013-01-23 京信通信系统（中国）有限公司 Envelop detection apparatus and method thereof
CN102379037B (en) * 2009-03-30 2015-08-19 高通股份有限公司 Use the integrated circuit (IC) chip of top post-passivation technology and bottom structure technology
JP5241599B2 (en) * 2009-05-14 2013-07-17 三菱電機株式会社 Harmonic termination circuit
WO2010134858A1 (en) 2009-05-18 2010-11-25 Telefonaktiebolaget L M Ericsson (Publ) A harmonic control apparatus
JP2010278521A (en) * 2009-05-26 2010-12-09 Mitsubishi Electric Corp Power amplifier
TWI406497B (en) 2009-06-02 2013-08-21 Richwave Technology Corp Power amplifier integrated circuit with compensation mechanism for temperature and output power
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper
US8521101B1 (en) 2009-09-17 2013-08-27 Rf Micro Devices, Inc. Extracting clock information from a serial communications bus for use in RF communications circuitry
US8110915B2 (en) 2009-10-16 2012-02-07 Infineon Technologies Ag Open cavity leadless surface mountable package for high power RF applications
US8301106B2 (en) 2010-02-10 2012-10-30 Javelin Semiconductor, Inc. Stacked CMOS power amplifier and RF coupler devices and related methods
US7994862B1 (en) 2010-02-11 2011-08-09 Sige Semiconductor Inc. Circuit and method of temperature dependent power amplifier biasing
US8571492B2 (en) 2010-04-20 2013-10-29 Rf Micro Devices, Inc. DC-DC converter current sensing
US8559898B2 (en) 2010-04-20 2013-10-15 Rf Micro Devices, Inc. Embedded RF PA temperature compensating bias transistor
US8542061B2 (en) 2010-04-20 2013-09-24 Rf Micro Devices, Inc. Charge pump based power amplifier envelope power supply and bias power supply
US8565694B2 (en) 2010-04-20 2013-10-22 Rf Micro Devices, Inc. Split current current digital-to-analog converter (IDAC) for dynamic device switching (DDS) of an RF PA stage
US8154345B2 (en) 2010-06-03 2012-04-10 Skyworks Solutions, Inc. Apparatus and method for current sensing using a wire bond
US8417196B2 (en) * 2010-06-07 2013-04-09 Skyworks Solutions, Inc. Apparatus and method for directional coupling
US8164387B1 (en) 2010-06-30 2012-04-24 Triquint Semiconductor, Inc. Simultaneous harmonic termination in a push-pull power amplifier
JP5952998B2 (en) * 2010-07-26 2016-07-13 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor device
TWM394582U (en) 2010-07-26 2010-12-11 Acsip Technology Corp Antenna module
TW201212228A (en) * 2010-09-13 2012-03-16 Visual Photonics Epitaxy Co Ltd Heterojunction Bipolar Transistor structure with GaPSbAs base
US8357263B2 (en) 2010-10-05 2013-01-22 Skyworks Solutions, Inc. Apparatus and methods for electrical measurements in a plasma etcher
US8188575B2 (en) 2010-10-05 2012-05-29 Skyworks Solutions, Inc. Apparatus and method for uniform metal plating
US8611834B2 (en) 2010-11-01 2013-12-17 Cree, Inc. Matching network for transmission circuitry
US9105488B2 (en) * 2010-11-04 2015-08-11 Skyworks Solutions, Inc. Devices and methodologies related to structures having HBT and FET
US20120112243A1 (en) 2010-11-04 2012-05-10 Zampardi Peter J Bipolar and FET Device Structure
KR20120053332A (en) 2010-11-17 2012-05-25 삼성전자주식회사 Semiconductor package and method of forming the same
US8797103B2 (en) 2010-12-07 2014-08-05 Skyworks Solutions, Inc. Apparatus and methods for capacitive load reduction
US8598950B2 (en) * 2010-12-14 2013-12-03 Skyworks Solutions, Inc. Apparatus and methods for capacitive load reduction
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
WO2012088300A2 (en) * 2010-12-22 2012-06-28 Skyworks Solutions, Inc. Power amplifier control circuit
US8889995B2 (en) 2011-03-03 2014-11-18 Skyworks Solutions, Inc. Wire bond pad system and method
US8686537B2 (en) 2011-03-03 2014-04-01 Skyworks Solutions, Inc. Apparatus and methods for reducing impact of high RF loss plating
WO2012118896A2 (en) 2011-03-03 2012-09-07 Skyworks Solutions, Inc. Apparatus and methods related to wire bond pads and reducing impact of high rf loss plating
WO2012125504A2 (en) 2011-03-11 2012-09-20 Skyworks Solutions, Inc. Dual mode serial/parallel interface and use thereof in improved wireless devices and switching components
US8938566B2 (en) 2011-03-17 2015-01-20 American Megatrends, Inc. Data storage system for managing serial interface configuration based on detected activity
US20120293520A1 (en) 2011-05-19 2012-11-22 Qualcomm Mems Technologies, Inc. Piezoelectric resonators with configurations having no ground connections to enhance electromechanical coupling
TW201301481A (en) 2011-06-23 2013-01-01 Kopin Corp Bipolar high electron mobility transistor and methods of forming same
WO2013009640A2 (en) 2011-07-08 2013-01-17 Skyworks Solutions, Inc. Signal path termination
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US8417200B1 (en) 2011-09-30 2013-04-09 Broadcom Corporation Wideband power efficient high transmission power radio frequency (RF) transmitter
US8791719B2 (en) 2011-10-24 2014-07-29 Skyworks Solutions, Inc. Dual mode power amplifier control interface with a two-mode general purpose input/output interface
US9876478B2 (en) 2011-11-04 2018-01-23 Skyworks Solutions, Inc. Apparatus and methods for wide local area network power amplifiers
CN104011998B (en) 2011-11-04 2016-12-14 天工方案公司 Apparatus and method for power amplifier
KR101899509B1 (en) 2011-11-11 2018-09-20 스카이워크스 솔루션즈, 인코포레이티드 Flip-chip linear power amplifier with high power added efficiency
US9054065B2 (en) 2012-04-30 2015-06-09 Skyworks Solutions, Inc. Bipolar transistor having collector with grading
CA2870468C (en) 2012-05-25 2016-02-02 Tracy L. HOOSE Apparatus and methods for increasing the buoyancy of a wheeled vehicle
US8948712B2 (en) 2012-05-31 2015-02-03 Skyworks Solutions, Inc. Via density and placement in radio frequency shielding applications
WO2013188694A1 (en) 2012-06-14 2013-12-19 Skyworks Solutions, Inc. Process-compensated hbt power amplifier bias circuits and methods
KR101921686B1 (en) 2012-06-14 2018-11-26 스카이워크스 솔루션즈, 인코포레이티드 Power amplifier modules including wire bond pad and related systems, devices, and methods
US8884700B2 (en) 2013-01-17 2014-11-11 Raytheon Company Integrated circuit chip temperature sensor
JP2014217014A (en) 2013-04-30 2014-11-17 株式会社東芝 Wireless device
JP6312207B2 (en) 2014-06-18 2018-04-18 コニカミノルタ株式会社 Paper humidifier and image forming system
JP2016154503A (en) 2015-02-25 2016-09-01 株式会社クラレ Method for producing low-salt soy sauce

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378922A (en) * 1992-09-30 1995-01-03 Rockwell International Corporation HBT with semiconductor ballasting
US20070194852A1 (en) * 2006-02-17 2007-08-23 Hirokazu Tsuromaki Radio frequency power amplifying module with hetero junction bipolar transistor

Also Published As

Publication number Publication date
JP2015527730A (en) 2015-09-17
TW201806312A (en) 2018-02-16
TW202029642A (en) 2020-08-01
TWI699965B (en) 2020-07-21
JP6938552B2 (en) 2021-09-22
JP2018050049A (en) 2018-03-29
CN104410373B (en) 2016-03-09
JP2019135766A (en) 2019-08-15
US20170257070A1 (en) 2017-09-07
EP2862273B1 (en) 2020-02-12
TWI631817B (en) 2018-08-01
HK1205596A1 (en) 2015-12-18
US20220393653A1 (en) 2022-12-08
TWI601377B (en) 2017-10-01
KR101921686B1 (en) 2018-11-26
US9755592B2 (en) 2017-09-05
US9520835B2 (en) 2016-12-13
CN104410373A (en) 2015-03-11
TWI617133B (en) 2018-03-01
TW201415790A (en) 2014-04-16
US9692357B2 (en) 2017-06-27
US20140002188A1 (en) 2014-01-02
US20150326181A1 (en) 2015-11-12
US20160379944A1 (en) 2016-12-29
US20150326182A1 (en) 2015-11-12
TW201635699A (en) 2016-10-01
TW201810936A (en) 2018-03-16
US20150326183A1 (en) 2015-11-12
TW201717540A (en) 2017-05-16
US20160380602A1 (en) 2016-12-29
KR20180126625A (en) 2018-11-27
TWI554026B (en) 2016-10-11
KR102250612B1 (en) 2021-05-10
KR20190058711A (en) 2019-05-29
TWI578694B (en) 2017-04-11
US20160380594A1 (en) 2016-12-29
US9041472B2 (en) 2015-05-26
TWI649962B (en) 2019-02-01
KR20200056463A (en) 2020-05-22
TW201828592A (en) 2018-08-01
US9660584B2 (en) 2017-05-23
TWI678883B (en) 2019-12-01
KR101680511B1 (en) 2016-11-28
KR20160006255A (en) 2016-01-18
JP6092452B2 (en) 2017-03-08
KR101983959B1 (en) 2019-05-29
JP5893800B2 (en) 2016-03-23
US20210050826A1 (en) 2021-02-18
EP2862273A4 (en) 2016-04-13
JP6490857B2 (en) 2019-03-27
KR20160006257A (en) 2016-01-18
JP6383853B2 (en) 2018-08-29
US10771024B2 (en) 2020-09-08
US10090812B2 (en) 2018-10-02
TW201919333A (en) 2019-05-16
KR20150011851A (en) 2015-02-02
KR20150028312A (en) 2015-03-13
JP2016122846A (en) 2016-07-07
US9887668B2 (en) 2018-02-06
KR101584042B1 (en) 2016-01-08
US11451199B2 (en) 2022-09-20
US9847755B2 (en) 2017-12-19
EP3567629A2 (en) 2019-11-13
JP2018174338A (en) 2018-11-08
WO2013188712A1 (en) 2013-12-19
TWI601376B (en) 2017-10-01
JP2016225642A (en) 2016-12-28
US20190158045A1 (en) 2019-05-23
CN103597742A (en) 2014-02-19
EP2862273A1 (en) 2015-04-22
TWI606691B (en) 2017-11-21
TW201728077A (en) 2017-08-01
TW201742371A (en) 2017-12-01

Similar Documents

Publication Publication Date Title
EP3567629A3 (en) Power amplifier modules including related systems, devices, and methods
WO2015009761A3 (en) Utility locator transmitter devices, systems, and methods with dockable apparatus
EP2738807A3 (en) An apparatus including a semiconductor device coupled to a decoupling device
EP2846229A3 (en) Systems and methods for generating haptic effects associated with audio signals
EP2778845A3 (en) Systems and methods for haptics in vibrating environments and devices
EP2657669A3 (en) TMAP sensor systems and methods of manufacturing those
EP2778848A3 (en) System, method and electronic device for providing a haptic effect to a user
BR112012030352A2 (en) active cable circuitry
MX2022000557A (en) Eyewear docking station and electronic module.
WO2014127142A9 (en) Optical ground tracking apparatus, systems, and methods
EP2778854A3 (en) Wearable device and augmented reality device
EP4221470A3 (en) Assembly structure
WO2012118625A3 (en) System and methods for improving power handling of an electronic device
MX349888B (en) Systems and methods for detecting welding and cutting parameters.
EP2876984A3 (en) Power conversion device and method for assembling the same
EP2878939A3 (en) Force detecting device, robot, eletronic component conveying apparatus
EP2871446A3 (en) Pedestrian observation system, recording medium, and estimation of direction of travel
MX341263B (en) Systems and methods for monitoring a subsea environment.
EP2709384A3 (en) Information transmission method and system and device
CL2009000098A1 (en) Master method and device to solve the simultaneous responses from multiple slave devices, in an electronic detonation system, which comprises receiving simultaneous responses with at least two dicriminators, processing the data and establishing identifiers of said devices
MY187683A (en) Apparatus and method to change current limit
EP2577477A4 (en) Integration of processor and input/output hub
MX2013009396A (en) Method of locating smt connector with smt cap feature.
EP2527854A3 (en) Systems and methods for determining electrical faults
WO2014113198A3 (en) System and method for tailoring applications and application repositories for individual electrical devices

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED

AC Divisional application: reference to earlier application

Ref document number: 2862273

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/522 20060101ALI20191217BHEP

Ipc: H01L 23/552 20060101ALN20191217BHEP

Ipc: H01L 29/812 20060101ALI20191217BHEP

Ipc: H03F 3/19 20060101ALI20191217BHEP

Ipc: H01L 49/02 20060101ALI20191217BHEP

Ipc: H01L 23/66 20060101ALI20191217BHEP

Ipc: H01L 29/36 20060101AFI20191217BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20200722

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR