JPH01125856A - Semiconductor device - Google Patents

Abstract

PURPOSE:To inhibit a parasitic impedance, which is the main cause of the deterioration of high-frequency characteristics and is generated in a circuit coupling, by a method wherein a MESFET and a hetero-junction bipolar transistor(HBT) are constituted on the same semiconductor substrate. CONSTITUTION:An n<+> GaAs layer 2, an n-type GaAs layer 3 which is used as a collector, a p-type GaAs layer 4 which is used as a base, an n-type AlGaAs layer 5 which is used as an emitter and an n<+> GaAs layer 6 for the ohmic contact of the emitter are constituted on a semi-insulative GaAs substrate and moreover, a p<+> base layer 7 is formed outside of the layer 4 and collector, base and emitter electrodes 8, 9 and 10 for ohmic contact are respectively formed on the layers 2, 7 and 6 to constitute an HBT 11. Moreover, a drain electrode 13 is formed on the layer 2 by ohmic contact and a gate electrode 15 for Schottky junction is formed on an n-type GaAs layer 14 constituted in the layer 2 to constitute a MESFET 12, which is formed by using in common the electrode 8 of the HBT 11 as a source electrode. Thereby, a reduction in a parasitic impedance can be contrived.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device suitable for a high frequency integrated circuit.

[Conventional technology]

Conventionally, GaAs (gallium arsenide) MESFETs, which have superior high frequency characteristics compared to St (silicon) bipolar transistors, are often used in high frequency integrated circuits. The integrated circuit in the communication transmitting/receiving device includes an amplifier, a frequency converter, an oscillator, etc., and these integrated circuits are described in JP-A-57-128057, JP-A-58-39052, etc. There is. Regarding the oscillator, Japanese Patent Application Laid-open No. 6
Frequency converters are also discussed in Japanese Patent Application Laid-open No. 1-131603, etc., and Japanese Patent Application Laid-Open No. 60-7210.

[Problem that the invention seeks to solve]

When configuring an amplifier or frequency converter with GaAs MESFET, its broadband characteristics, low noise characteristics, and low distortion characteristics (
High-performance integrated circuits can be realized by high linearity), and are applied to the above-mentioned conventional technology.

However, GaAs MESFETs have the following problems. First, when configuring an oscillator, the 1/f noise that increases in the low frequency range is large, resulting in an increase in oscillation noise (deterioration in oscillation spectrum purity). Conventionally, countermeasures have been taken to remove low-frequency noise using a high-pass filter or to improve the Q of a resonant circuit, but these methods tend to make the equipment complicated and are not sufficient. There is a problem that 1/f noise is not suppressed. Second, the variation in required threshold voltage (that is, the variation in current) is large.

In order to suppress this variation, a compensation circuit etc. is required.
The circuit scale increases. Thirdly, when driving a load with current, the MESFET's current supply capability is not large. Countermeasures have been taken to address this problem, such as increasing the FET size, but this increases the circuit scale.

To address these problems, there is a method of configuring the oscillator, constant current source, and load drive circuit discretely outside the integrated circuit, but high-frequency characteristics deteriorate due to parasitic impedance such as parasitic inductance due to wiring and parasitic capacitance due to the package. Resulting in. In addition, in order to reduce the influence of this parasitic impedance, a Si bipolar transistor fjr:
There is also a method of embedding it on a GaAs semiconductor substrate, but S1
Bipolar transistors are not easy to manufacture because their high frequency characteristics are inferior to MESFETs, their manufacturing processes are different, and they require complicated processes such as embedding.

An object of the present invention is to provide a semiconductor device as a high-frequency integrated circuit that overcomes the above-mentioned problems by making full use of the high-frequency characteristics inherent in GaAs.

[Means for solving problems]

The above purpose is to deposit GaAs ME 5 on the same semiconductor substrate.
Form a heterojunction bipolar transistor with FET,
This is achieved by using both of them in appropriate circuits, for example, a heterojunction bipolar transistor T-excavator, a constant current source, a load drive circuit, etc., and using the MESFE'I' in an amplifier and a frequency converter. Furthermore, Ga
By making the operating layer of the AsMESFET and the operating layer of any of the heterojunction bipolar transistors common, higher performance can be achieved.

[Effect]

It is known that MESFETs are susceptible to the influence of the semiconductor surface because the current flow path in the semiconductor is limited to a channel formed in the immediate vicinity of the gate electrode, which increases 1/f noise.

On the other hand, in a heterojunction bipolar transistor, the current flow path does not depend on the semiconductor surface state, so the 1/f noise is small.

Further, a heterojunction bipolar transistor is a bipolar transistor based on a pn junction, and has a higher load current driving ability than a MESFET, and also has fewer factors that determine the current #L than a MESFET, so it generally has less current variation.

Furthermore, the KGaAs heterojunction bipolar transistor has high frequency characteristics equivalent to that of a GaAs MESFET.

Heterojunction bipolar transistor with GaAsME
By configuring the SFET on the same semiconductor substrate and using the heterojunction bipolar transistor in the oscillator, constant current source, load drive circuit, etc., GaAs MESFET k amplifier, frequency converter, etc.), it has good high frequency characteristics and low oscillation noise. It is possible to construct a high-frequency integrated circuit having an oscillator with low current, a constant current source with low current variation, a load drive circuit with high current drive capability, an amplifier with low distortion and low noise, a frequency converter, etc.

In addition, by sharing the operating layer of the GaAs MESFET and one of the operating layers of the heterojunction bipolar transistor, parasitic impedance due to wiring and electrodes can be reduced, making it possible to operate at higher frequencies. At the same time, the manufacturing process can be simplified.

〔Example〕

Hereinafter, the present invention will be explained in detail using example tubes.

FIG. 1 is a sectional view showing the structure of an embodiment of the present invention.

In the same figure, a semi-insulating GaA layer and an nGaAs layer 2 are formed on the substrate.
, an n-type GaAs layer 3 serving as a collector, a P-type GaAs layer 4 serving as a base, and an n-type AtGaAs Nj serving as an emitter.
5. An nGaAs layer 6 is formed for ohmic contact of the emitter, and a P+ type base layer 7 is formed outside the P type GaAs layer 4, and the n GaAs layer 2 and the P type base layer 7 are formed.
A collector electrode 8, a base electrode 9, and an emitter electrode 1 (1) in ohmic contact are formed on the base layer 7 and the n-GaAs layer 6, respectively, to form a 11-ft heterojunction bipolar transistor (hereinafter abbreviated as HBT). Drain electrode 13 with ohmic contact, also n G3A3
A MESFE in which a Schottky junction gate electrode 15 is formed on the n-type GaAs layer 14 formed in the layer 2, and the collector electrode 8 of the HBT 11 is shared as the source electrode.
This is the configuration of T12.

According to this embodiment, one semi-insulating GaAs substrate 1 has n
HBTll and MESFET using GaAs layer 2 in common
12, it can be processed in the same process, which is effective in simplifying the manufacturing method. Further, by making the collector electrode 8 of the HBTll and the source electrode 8 of the MESFET 12 common, the chip area can be reduced, and parasitic impedance due to the connection between the electrodes can be minimized, which has the advantage of excellent high frequency characteristics.

In Figure 1, the collector electrode 8 of HBTll and the MESFE
TM2 source electrode 8t - An example is shown where the source electrode is shared, but HB
A similar effect can be obtained by making the collector electrode 8 of Tll and the drain electrode 13't of MESFET 12 common.

FIG. 2 is a sectional view showing the structure of another embodiment of the present invention. In this figure, the same parts as in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted. The drain y [pole 13 and source electrode 1
6 and also constitutes the n-type GaAs layer 2'.
A MESFET is constructed by forming a Schottky junction gate electrode 15 on an aAs layer 14 ((, two n GaAs layers 2 and 2' are insulated via an insulating layer 17, and a source electrode 16 and a collector electrode 8 are formed). All wiring layers 18 connect HBTll and MESFET I2 to one semi-insulating GaA
s The one constructed on the base 1 is used.

According to this embodiment, since the HBTll and MESFET 12 are all formed on the same substrate, they can be processed in the same process, which is effective in simplifying the manufacturing method. Also, HBTll and MESF
Since the connection of the ET 12 is through the wiring layer 18, the parasitic impedance caused by the connection between the electrodes can be reduced, resulting in excellent high frequency characteristics.In addition, there are fewer restrictions on the arrangement of the HBTll and the MESFET 12, so there is an advantage of a greater degree of freedom in design.

Note that in the wiring layer 18, the collector electrode 8 and the gate electrode 15,
Alternatively, the same effect can be obtained by connecting the collector electrode 8 and the source electrode 13.

FIG. 3 is a sectional view showing the structure of another embodiment of the present invention. In this figure, the same parts as in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted.

HBTll and n-channel ME on semi-insulating GaAs substrate 1
A SFET 12 is formed, and the base electrode 9 of the HBT 11 and the source electrode 16 of the MESFET 12 are connected by a wiring layer 18.

This embodiment, like the embodiment shown in FIG. 2, is effective in simplifying the manufacturing method and improving high frequency characteristics. In this embodiment, the source electrode 16 of the MESFET 12 is connected to the base electrode 9 of the HBTll, but the drain electrode 1
Alternatively, the same effect can be obtained by connecting the gate electrode 15 and the base electrode 9.

FIG. 4 is a sectional view showing the structure of another embodiment of the present invention. In this figure, the same parts as in the embodiment shown in FIGS. 1 to 6 are designated by the same reference numerals, and the explanation thereof will be omitted. In the figure, 20 is a semi-insulating GBAs layer. In this embodiment, the n-channel MESFET 12 is
The wiring layer 18 is formed simultaneously with the aAs layer 6, and the source electrode 16 of the MESFET 12 and the emitter electrode 10 of the HBTll are formed at the same time as the aAs layer 6.
The configuration is such that they are connected via. Maku, MESFET
12, an isolation region formed by a semi-insulating tGaAs layer 20 is provided between the n-type GaAs layer 3 and the nGaAs layer 6'.

According to this embodiment, in addition to the same effects as those in FIGS. 2 and 3, since the MESFET M2 is formed simultaneously with the n-type GaAs layer 6 of the uppermost layer of the HBTll, the n-type AtGaAs layer is layered from the nGaAs layer 2 of the HBTll. This has the advantage that the MESFET 12 can be formed without exposing the MESFET 12 to process measures (eg, ion implantation, annealing, etc.) during the formation of the MESFET 51 or without using special protection measures. Note that the same effect can be obtained by connecting the drain electrode 15 or gate electrode 15 of the MESFET 12 to the emitter electrode 10t of the HBTll.

FIG. 5 is a sectional view showing the structure of another embodiment of the present invention. In this figure, the same parts as in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted. 19 is P channel MESF
The P-type gate diffusion layer of ET12, 7' is the P-type gate diffusion layer of MESFET.
This is a drain diffusion layer.

By making them common, the source electrode 9 of the j9MEsFET 12 and the base electrode 9 of the HBTll are made common.

According to this embodiment, since the P source layer of the MESFET 12 and the P+ base layer of the iBTll are used in common, the MEST is formed on one semi-insulating GaAs substrate 1 in the same process.
'ET12 and HBTll can be configured, which is effective in simplifying the manufacturing method. Furthermore, the base electrode 9 of HBTll
By sharing the source electrode 9 of MESFET M2 and MESFET M2, the chip area can be reduced, and the parasitic impedance between the electrodes can be minimized, which has the advantage of excellent high frequency characteristics.

Note that in this embodiment, the source electrode 9 of the MESFET 12
Although the explanation has been made assuming that the base electrode 9 of the HBT 11 and the drain electrode 13 of the MESFET 12 are common,
A similar effect can be obtained when the base electrode 9t is used in common.

FIG. 6 is a sectional view showing the structure of another embodiment of the present invention. In this figure, parts that are the same as those in FIGS. 1 and 5 are given the same symbols, and their explanations will be omitted. In this example, M
The ESFET 12 is formed simultaneously with the n''GHAB layer 6 of the HBT 11, and the source electrode 10 of the MESFET 12 and the HB
Although it has a structure in which the emitter electrode 10 of Tll is shared,
In MESFET 12, nWGaAs layer 3 and n-type AtGa
A semi-insulating GaAa layer 20t is formed between the As layer 5, and M
This prevents a parasitic transistor from being formed directly under the ESFE 712.

In this example, n
MESFET 12 and HB using GaAs layer 6 in common
Since it configures Tll, it can be processed in the same process, and
Since the shared n GaAs layer 6 is the top layer, the MES
A process for protecting the FET 12 is not required, which is very effective in simplifying the manufacturing method. Furthermore, by using common electrodes, excellent high-frequency characteristics can be obtained with a small chip area. In addition, ME
A similar effect can be obtained even if the drain electrode 13 of the SFET 12 and the emitter electrode 10 of the HBT are made common.

FIG. 7 is a sectional view showing the structure of another embodiment of the present invention. In this figure, the same parts as in FIGS. 6 and 4 are designated by the same reference numerals, and their explanation will be omitted.

This example is an example in which the HBT11yk is configured as a collector top type, and the cross-sectional shape of MESFET12 and HBTML is the first type.
Similar to that in fig. HBTll and MESFET1
2 nGIAgGaAs layers 6 are formed simultaneously, HBTll
Emitter electrode 10 of MESFET 12 and source electrode 1 of MESFET 12
0 in common, and in addition, the base electrode 9 of the KHBT 11. Collector electrodes 8 are sequentially formed.

In this embodiment, the same effect as that in FIG. 1 can be obtained.

The same applies when the common electrode is the drain.

In addition, as in this embodiment, HBTll is configured as a collector top block, and MESFET12? Similar effects can be obtained by connecting in the same manner as in the embodiments shown in FIGS. 5 and 6.

FIG. 8 is a circuit diagram showing an example of application of the present invention to a high frequency integrated circuit used in a tuner or the like.

In the same figure, '50 is a signal input terminal, 31 is MESF
An amplifier using ET, 32 an oscillator using HBT, 3
3 is a frequency converter using MESFET, 34 is MES
An IF amplifier using FET, 35 is a signal output terminal.

The signal input from the terminal 30 is amplified by the amplifier 51, the frequency converter 33 performs IF multiplication signal frequency conversion using the excavation signal from the oscillator 62, the signal is amplified by the IP amplifier 34, and the signal is sent to the terminal 35.
Output from. The characteristics required for each circuit block are that the amplifier 61 and the frequency converter 33 have low distortion, low noise, and wideband characteristics, the oscillator 32 has low oscillation noise, and the amplifier 34 has low distortion characteristics. In order to satisfy these characteristics, the amplifier 31,! 14. The frequency converter 33 uses MESFET1, and the oscillator 32 uses HBTt-. Furthermore, by using the HBT as a constant current source, the current variation of the MESFET is reduced.

In the present invention, at least the semiconductor elements used in each circuit are formed on the same semiconductor substrate, and by connecting them on the substrate, the parasitic impedance when connecting the circuits is reduced, and the integrated circuit is capable of operating at a higher frequency. A circuit can be realized. Furthermore, as in the embodiment shown in FIG. 1, by connecting the operating layer of the MESFET and one of the operating layers of the HBT in common, the parasitic impedance can be further reduced.
High frequency operation becomes possible.

FIG. 9 shows the embodiment shown in FIG.
) Collector electrode! FIG. 2 is a circuit diagram showing a specific circuit of an embodiment in which a pole and a source electrode of a MESFET are shared. In the same figure, 40.55 is HBT, 50°51.52.80
is MESFET, 41, 42, 44.66 is capacity, 46
is an inductor, 45, 46° 61. 62. 64, 65.
66 is a resistor, 47 is a base voltage supply terminal, 54.55.
58, 60.81 are bias supply terminals, 56.57 are signal output terminals, and 59 is a signal input/bias supply terminal.

At least HBT40.5! l, MESFET50
．． 51, 52.80 are constructed on the same semiconductor substrate, and HB
The collector electrode of T40, the source electrode of MESFET 80, the collector electrode of HBT 53, and the source electrode of MESFET 52 are shared.

HBT40 is for oscillation and inductor 46. A parallel resonant circuit consisting of a capacitor FF144 is connected to the base via a coupling capacitor 41, a feedback capacitor 42 is connected between the base and the emitter, and the source of a low impedance MESFET 80 is connected to the collector to form a grounded collector oscillation circuit. ing.

The oscillation signal output from the excavation circuit is sent to the buffer MESFE.
The signal is input via T80 to the gate of MESFET 50, which constitutes a single-balanced frequency converter. MESF
The gate of ET5+ is grounded through a capacitor 63 since the oscillation signal is input as an unbalanced input in this embodiment.

The input signal is input from the terminal 59 to the gate of MESFET52, amplified, and then sent to the MESFET5 for frequency conversion.
0.51, and the frequency-converted signal is output as a balanced signal from terminals 56 and 57.

The collector of an iBT 53 is connected to the source of the MESFET 52, and a constant voltage is applied from a terminal 60 to the base of the HBT 53, thereby operating it as a constant current source.

In this way, by using HBT40T in the oscillator, it is possible to reduce oscillation noise, and also to use MES in the frequency converter.
By using the FETs 50, 51, and 52, it has low distortion characteristics, and by using the HBT 53 as a constant current source, it is possible to reduce the variation in spot current.

In addition, parasitic impedance can be reduced by sharing the source electrode of the MESFET and the collector electrode of the HBT as in the embodiment shown in FIG.
Regarding FET80, the ground impedance of the collector of HBT40 is stable, and HBT53 and MESFET52
Since the source impedance of the MESFET 52 is stabilized, much higher frequency operation is possible and the chip area can be reduced.

Note that the oscillator and frequency converter are not limited to those in this embodiment.

FIG. 10 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. 1. In this figure, parts having the same functions as those in FIG. 9 are given the same symbols, and their explanations are omitted.

In addition, as in FIG. 9, at least HBT40, 53, M
ESFET80,50゜51.52,50',51',
52' is constructed on the same semiconductor substrate, and the collector electrode of HBT40, the source electrode of MESFET8o, and the HBT
The collector electrode of MESFET 55 and the source electrode of MESFET 52 and 52' are shared.

In this embodiment, a double-balanced frequency converter is used.
It is input to the gates of FETs 52 and 52', amplified and sent to frequency conversion MESFETs 50 and 51°50' and 51'.
input from the source. The oscillator and constant current source are the same as the circuit shown in FIG.

This circuit also has the same effects as the circuit shown in FIG. 9, and because of the use of a double-balanced frequency converter), distortion can be further reduced and leakage of oscillation signals, etc. can also be reduced.

FIG. 11 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. 1. In this figure, parts having the same functions as those in FIG. 9 are denoted by the same symbols, and explanations thereof will be omitted. In addition, as in Fig. 9, at least HBT40 and MESFET80
, 50.51 are constructed on the same semiconductor substrate, and HBT40
The collector electrode of MESFET 80 and the source electrode of MESFET 80 are shared.

In this circuit, the oscillation signal from the oscillator is connected to MESFET 80t.
- input to the source of MESFET 50.51 constituting a single-balanced frequency converter through terminal 58.
, 58' to the gate, frequency conversion is performed and output from terminals 56 and 57. By using an oscillator as a frequency converter and a constant current source, the circuit can be simplified. The buffer MESFET 80 supplies the oscillation signal to the source of the frequency converter and stabilizes the ms supplied from the source of the frequency converter to the oscillation circuit.

In addition to the above-mentioned effects, this circuit example uses the configuration of the embodiment shown in FIG.
Parasitic impedance when connecting the source of ESFET 80 can be reduced, enabling high frequency operation, etc.
The same effect as the circuit example shown in the figure can be obtained.

FIG. 12 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. 1. In this figure, parts having the same functions as those in FIG. 9 are given the same symbols, and explanations thereof will be omitted. 70
is an HBT, and 71 is a bias supply terminal. This circuit example is a buffer MESFET 80 of the circuit example shown in FIG.
'(This is an example of replacing with i-HBT70. The input impedance from the emitter of HBT70 is MESFET80.
Since the input impedance from the source is lower than the input impedance from the source, the collector of the oscillation HBT 40 is grounded with a low impedance, thereby stabilizing the oscillation characteristics. In addition to the above-mentioned effects, this circuit example also provides the same effects as the circuit example shown in FIG. 9.

FIG. 13 is a circuit diagram showing a specific circuit of the embodiment shown in FIG. 5, that is, an embodiment in which the base electrode of the HBT and the drain electrode of the MESFET are shared. In the figure, 100 is a MESFET, 101 is a signal input/bias supply terminal, 102, 105, 106, and 108 are resistors, and 1
04, 105 are bias supply terminals, 107 is HBT, 1
09 is an output terminal. Also at least MESFET
100 and HBT 107 are constructed on the same semiconductor substrate, and M
The drain electrode of the ESFET 100 and the base electrode of the BT 107 are shared.This circuit inputs a signal from the gate of the HMESFET IDO and outputs it from the emitter follower circuit of the HBT 107 after amplification.

In this circuit example, since the signal is input from the gate, it can be input with high impedance, and the influence on the circuit connected to the input terminal 101 is small. In addition, since it is amplified by ME5FET100, it can be amplified with low distortion, and since it is outputted by the emitter follower circuit of KHBTl 07, it is possible to output with low impedance, and it can be used as an impedance converter, and the current driving ability of the load can be improved. expensive.

In addition to the above-mentioned effects, this circuit example has the effect that the drain electrode of the MESFET 100 and the HBT
Since the 1070 base electrode can be shared and parasitic impedance can be reduced, wideband operation up to very high frequencies is possible.

FIG. 14 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. In this figure, parts having the same functions as those in FIG. 9 are denoted by the same symbols, and explanations thereof will be omitted. 67
is an oscillation signal input and bias supply terminal, 68.72 is a bias supply terminal, 73.74 is an HBT, 75.76 is a resistor, and 77.78 is a signal output terminal. Also at least M
ESFET50.51.52, HBT55.73.74
are constructed on the same semiconductor substrate, and the drain electrode of MESFET 50, the base electrode of HBT 73, and the MESFET
The drain electrode of 51 and the base electrode of HBT740 are shared.

An oscillation signal is input from the terminal 67 to the gate of MESFET 50 of the frequency converter, an input signal is input from the terminal 59 to the gate of MESFET 52, and the frequency-converted signal is input to the MESFET 50.
Input from the drain of SFET50.51 to the base of HBT75.74, and connect to terminal 7 through the emitter 7 lower circuit.
Output from 7.78. By using an emitter follower circuit using the output buffer circuit 'eHBT, stable output characteristics with low output impedance can be obtained, and the current driving capability of the load can be increased.

In addition to the above effects, this circuit example can reduce the parasitic impedance when connecting the drain of the MESFET and the base of the HBT, as in the embodiment shown in FIG. 5, and can operate at a much higher frequency. Furthermore, by using the HBT 53, it is possible to reduce current variations in the single-balanced same wave number converter.

FIG. 15 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. In the same figure, parts having the same functions as those shown in FIG. 13 are given the same symbols and their explanations are omitted.

Furthermore, at least the MESFET loo and the HBT 107 are constructed on the same semiconductor substrate, and the source electrode of the NESFET 100 and the base electrode of the HBT 107 are made common. A signal is input from the gate of MESFETloo, converted to low impedance by the source follower circuit, and then further
Connect terminal 109 through the emitter follower circuit of BT107.
Output from.

In this circuit example, similarly to the circuit example shown in FIG.
The high input impedance reduces the influence on the circuit connected to the terminal 101, converts the output side to a low output impedance, and has a high current driving ability of the load. In addition to the above effects, MES
Since the source electrode of the FBTloo and the base electrode of the HBT1070 can be shared to reduce parasitic impedance, wideband operation is possible up to a very high voltage.

FIG. 16 is a circuit diagram showing a specific circuit of the embodiment shown in FIG. 6 or 7, that is, an embodiment in which the emitter electrode of the HBT and the source electrode of the MESFET are shared. In this figure, parts having the same functions as those in FIGS. 9 and 14 are denoted by the same symbols, and explanations thereof will be omitted. 82 is H
BT, 8! l is.

The oscillation signal input/bias supply terminal 84 is a resistor.

Furthermore, at least the HBT 82 and the MESFET 50.51 are constructed on the same semiconductor substrate, and the emitter electrode of the HBT 82 and the source electrode of the MESFET 50.51 are all shared. HBT82 is configured as an emitter follower circuit, and the output is converted from the emitter to MESFETs for frequency conversion.
o, s Input to the source of 1. Since the collector current flowing through HBT82 has little variation, MESFET50.
There is little variation in the source potential of HBT82.
Since the input impedance of the base is high, the influence on the circuit connected to the terminal 83 is small.

In addition to the above effects, as in the embodiment shown in FIG. 6 or 7, the emitter electrode of the HBT 82 and the MESFET 50
．． Since the parasitic impedance when connecting the source electrodes of 51 can be reduced, much higher frequency operation is possible.

FIG. 17 is a circuit diagram showing another specific circuit of the embodiment illustrated in FIG. 6 or 7. FIG. In this figure, parts having the same functions as those in FIG. 16 are given the same symbols and their explanations are omitted. 85 is a MESFET, 86 is a bias supply terminal, 87 is a resistor, 88 is a signal input terminal, and 89 is a signal output terminal.

At least HBT 82 and MESFET 85 are constructed on the same conductive substrate, and the emitter electrode of HBT 82 and the source 1 of MESFET 85 are connected to each other. The poles are shared.

This circuit is a buffer circuit that inputs the oscillation signal from the oscillator to the frequency converter, and the oscillation signal is input to the source of MESFET85 through the emitter follower circuit of HBT82.
Input to post-amplification wavenumber converter. The drain current flowing through HB T82 has little variation, so MESFET8
The source potential of the HBT 82 has a little variation in its source potential, and since the input impedance of the base of the HBT 82 is high, there is little influence on the oscillation circuit 62 connected to the base, so there is a high degree of freedom in designing the oscillation signal output section.

In addition to the above effects, as in the embodiment shown in FIG. 6 or 7, the emitter electrode of the HBT82 and the MESFET85
Since the parasitic impedance when connecting the source electrode of the device can be reduced, much higher frequency operation is possible.

FIG. 18 is a circuit diagram showing another specific circuit of the embodiment shown in FIG. 6 or FIG. 7. In this figure, parts having the same functions as those in FIG. 14 are given the same symbols and their explanations will be omitted. 90 is HBT, 91 is constant voltage source, 92.9
5 is a resistance, and 94 is a capacitance. Also at least HBT5
3,90, MESFET50,51 are constructed on the same semiconductor substrate, and the emitter electrode of HBT9Q and MESFET
50.

The drain electrode of 51, the collector electrode of HBT 53, and the source electrode of MESFET 50.51 are shared. This example circuit is a detection circuit with constant voltage and constant current circuits.

Since the base potential is fixed by the constant voltage source 91 and the nine HBTs 90 are used, even if the voltage supplied to the power supply terminal 54 fluctuates, the MES
The drain potential of FET50.51 does not change. Furthermore, since the emitter impedance of the HBT 90 is low, it operates stably over a wide band. In addition, the constant current source configured with HBT55 has little current variation, and is similar to MESFET.
5G and 51 can be reduced. In this way, in this circuit example, it is possible to construct a detection circuit with a stable bias, and, as in the embodiments shown in FIGS.
Drain electrode of ESFET50.51 and HBT5
Since the parasitic impedance when connecting the collector electrode of MESFET 3 and the source electrode of MESFET 50.51 can be reduced, wideband operation up to higher frequencies is possible.

〔Effect of the invention〕

As described above, according to the present invention, since the MESFET and the HBT are configured on the same semiconductor substrate, it is possible to suppress the parasitic impedance that occurs in circuit coupling, which is a cause of high frequency characteristic deterioration. HBTs with low oscillation noise and small current variations can be used for the constant current source circuit, and MESFETs with low noise and low distortion characteristics can be used for the frequency conversion circuit and amplifier circuit, so it is simple and does not require a variation compensation circuit. With this configuration, it is possible to construct a stable high-frequency integrated circuit that has excellent high-frequency characteristics, low oscillation noise, low noise characteristics, and low distortion characteristics, and has small current variations.

[Brief explanation of the drawing]

FIGS. 1 to 7 are cross-sectional views showing the structure of an embodiment of the present invention, FIG. 8 is a block diagram showing an application example of the invention, and FIGS. 9 to 18 are application examples of the invention, respectively. It is a circuit diagram showing. Explanation of symbols 1...Ga As substrate, 2...n G
aAs layer, 3...n Ga As layer, 4-"P
GaAs layer, 5”=・n AtGaAs layer, 6”・
... n Ga As layer, 7-" P Ga As
Layer, 8...Collector electrode, 9...Base electrode, 1o...Emitter electrode, 11...Curved heterojunction bipolar transistor, 12...M
ESFETl 13...Drain electrode, 14.
... nG2A 3 layer, 15... Gate electrode, 16... Source electrode Patent attorney Akio Namiki No. 1 Figure ゝ1 薯 2 Figure 3 Figure '1 T 4 α Man 5 Figure ゝ1 Plexus 6 Droplet Figure 7 Figure 9 Figure 11 Figure 127 Tomi 14 Figure $13 Figure @15e Happy Figure 16 Page 17 Figure 1S Figure

Claims (1)

[Claims] 1. Having a collector electrode, a base electrode, and an emitter electrode,
A heterojunction bipolar transistor in which at least one of the emitter-base junction or collector-base junction is a heterojunction, and a source electrode, a drain electrode, and a gate electrode made of a Schottky contact on a conductive semiconductor operating layer.
1. A semiconductor device comprising an ESFET and an ESFET formed on a common semiconductor substrate. 2. In the semiconductor device according to claim 1,
The heterojunction bipolar transistor and MESFE
T consists of a plurality of T's, and between an electrode included in a heterojunction bipolar transistor and an electrode included in a MESFET, and between an electrode included in a certain heterojunction bipolar transistor and an electrode included in another heterojunction bipolar transistor. , or a semiconductor device characterized in that an electrode included in one MESFET and an electrode included in another MESFET are connected via a wiring layer. 3. In the semiconductor device according to claim 1,
A semiconductor device characterized in that a conductive type semiconductor active layer constituting the MESFET and one of the conductive type semiconductor active layers constituting the heterojunction bipolar transistor are formed of a common active layer.