JP5721064B2 - リソグラフィ投影装置、オフセットを決定するための方法、露光方法、並びにデバイス製造方法 - Google Patents
リソグラフィ投影装置、オフセットを決定するための方法、露光方法、並びにデバイス製造方法 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
a.最小領域中心法(MZC):開口の輪郭を2つの同心円ではさんだ時、同心円の半径差が最小になる中心、b.最小二乗中心法(LSC):最小二乗平均円(基準円からの偏差の二乗和が最小となる円)の中心、c.最小外接円中心法(MCC):開口の輪郭に最小で外接する円の中心、d.最大内接円中心法(MIC):開口の輪郭に最大で内接する円の中心。
Claims (20)
- 所望のパターンに応じて放射ビームをパターニングするように構成されるパターニング装置を保持するように構成された支持構造体と、
基板を受け取るように構成された凹所を有し、前記基板を保持するように構成された基板テーブルと、
前記基板を保持するリムを有し、前記凹所内に配置されるホルダと、
前記パターニングされたビームを前記基板の目標部分上に投影するように構成された投影系と、
液体供給路と液体回収路とを有し、前記液体供給路を介して液体を前記投影系の下方に供給するとともに、前記液体回収路を介して前記供給された液体によって前記投影系の下方に形成される液浸領域から前記液体を回収する液浸システムと、
プリアライメント計測に基づいて前記凹所に入る前の前記基板の位置、及び前記凹所内に配置された前記基板の縁と前記凹所の縁とのギャップの一方又は両方を計測するように構成されたセンサと、
前記センサと連通し、前記基板の前記縁と前記凹所の前記縁との前記ギャップが前記凹所内で実質的に一様になるように前記センサの前記計測結果に基づいて前記凹所内に前記基板を位置決めするように構成された基板ハンドリングシステムと、
を備えるリソグラフィ投影装置。 - 請求項1に記載のリソグラフィ投影装置において、
前記基板ハンドリングシステムは、前記基板と前記凹所との間のオフセットを修正するために較正されるように構成されるリソグラフィ投影装置。 - 請求項1に記載のリソグラフィ投影装置において、
前記基板ハンドリングシステムは、前記基板の中心と前記凹所の中心との間のオフセットを決定するように構成されるリソグラフィ投影装置。 - 請求項1に記載のリソグラフィ投影装置において、
前記基板ハンドリングシステムは、前記基板が前記基板テーブルの表面又は前記凹所の縁に衝突せずに前記凹所内に入れるようにするために、前記基板テーブルに実質的に平行な平面内でどの程度前記基板が並進移動すべきかを決定するように構成されるリソグラフィ投影装置。 - 請求項4に記載のリソグラフィ投影装置において、
前記基板ハンドリングシステムは、前記平面内の前記並進移動の決定から前記基板と前記凹所との間のオフセットを決定するように構成されるリソグラフィ投影装置。 - 請求項1に記載のリソグラフィ投影装置において、
前記基板ハンドリングシステムは、移動可能であって、前記基板テーブル又は前記基板を前記基板テーブルに搬送する搬送アーム、又は前記基板ステージ及び前記搬送アームを保持する基板ステージを含み、
前記基板ステージ又は前記搬送アーム、又は前記基板ステージ及び前記搬送アームは、前記センサの前記計測結果に基づいて制御されるリソグラフィ投影装置。 - 請求項1に記載のリソグラフィ投影装置において、
前記液浸システムは前記基板上に一定量の液体を維持し、前記一定量の液体は前記ギャップ内を移動するリソグラフィ投影装置。 - 基板の中心とチャックの凹所の中心との間のオフセットを決定するための方法であって、
前記凹所内に配置された前記基板の縁と前記凹所の縁との間のギャップを複数の位置で計測することと、
前記計測から得られた情報を用いて前記基板の中心を決定することと、
前記凹所の前記中心と前記チャック部分で計測した前記基板の前記中心との間における前記基板のチャック心出しオフセットを決定することと、
前記基板をプリアライナに提供すること及び前記プリアライナにおける前記基板の中心を決定することと、
前記基板の公称中心と前記プリアライナ部分で計測した前記基板の前記中心との間におけるプリアライナ心出しオフセットを決定することと、
広域心出しオフセットを得るために、前記チャック心出しオフセットと前記プリアライナ心出しオフセットを結合することと、
を、含む方法。 - 請求項8に記載の方法において、
前記凹所の前記縁の位置を決定すること及び前記凹所の前記中心を計算することを、さらに含む方法。 - 請求項8に記載の方法において、
前記チャック心出しオフセットを決定することが、前記凹所の中心位置に対する前記基板の中心位置を決定することを含む方法。 - 請求項8に記載の方法において、
前記計測することが、光学的な検出装置を用いること及び反射した光ビームの強度変化を計測することを含む方法。 - 請求項8に記載の方法において、
前記計測から得られた前記情報を用いて前記基板の前記中心を決定することが、前記基板の前記縁の位置を決定すること及び前記縁の位置から前記基板の中心位置を計算することを含む方法。 - 請求項8に記載の方法において、
前記基板が基板ハンドラーを用いて前記凹所内に配置され、且つ、前記凹所から除去される方法。 - 請求項13に記載の方法において、
前記広域心出しオフセットを考慮するために前記基板ハンドラーを較正することを、さらに含む方法。 - 請求項14に記載の方法において、
前記基板ハンドラーを較正することは、続いて位置決めされる基板が実質的に前記凹所内の中心に配置されるよう、前記基板ハンドラーによる基板の位置決めをオフセット分だけシフトさせて前記広域心出しオフセットを修正することを含む方法。 - 請求項14に記載の方法において、
前記基板ハンドラーを較正することは、続いて配置される基板のギャップが前記凹所内で一様な広さであるように基板の位置決めを修正することを含む方法。 - 請求項8に記載の方法において、
前記計測によって得られた前記情報は、前記複数の位置での前記基板の前記縁と前記凹所の前記縁とのギャップに関する情報を含む方法。 - 請求項8〜17にいずれか一項に記載の方法を用いて、ステージの凹所内で前記基板を前記凹所に設けられるチャックによって支持することと、
前記ステージ上に支持される前記基板を投影光学系と液体を介して照明光で露光することと、
を含む露光方法。 - デバイス製造方法であって、
リソグラフィステップと、
デバイス組立ステップと、を含み、
前記リソグラフィステップでは、請求項18に記載の露光方法を用いて基板が露光されるデバイス製造方法。 - デバイス製造方法であって、
リソグラフィステップと、
デバイス組立ステップと、を含み、
前記リソグラフィステップでは、請求項1〜7のいずれか一項に記載のリソグラフィ投影装置を用いて基板が露光されるデバイス製造方法。
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JP2018005442A Expired - Fee Related JP6555554B2 (ja) | 2004-11-18 | 2018-01-17 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
JP2019008324A Pending JP2019066887A (ja) | 2004-11-18 | 2019-01-22 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
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EP (4) | EP2772804A1 (ja) |
JP (14) | JP4877653B2 (ja) |
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CN (5) | CN104360582B (ja) |
HK (7) | HK1198211A1 (ja) |
IL (3) | IL183280A0 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015111682A (ja) * | 2004-11-18 | 2015-06-18 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016040624A (ja) * | 2004-11-18 | 2016-03-24 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
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