JP4877653B2 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microscoopes, Condenser (AREA)
Description
a.最小領域中心法(MZC):開口の輪郭を2つの同心円ではさんだ時、同心円の半径差が最小になる中心、b.最小二乗中心法(LSC):最小二乗平均円(基準円からの偏差の二乗和が最小となる円)の中心、c.最小外接円中心法(MCC):開口の輪郭に最小で外接する円の中心、d.最大内接円中心法(MIC):開口の輪郭に最大で内接する円の中心
Claims (7)
- 物体上に露光ビームを照射する露光装置であって、
所定形状のプレートが着脱可能に搭載された第1ステージと;
前記第1ステージの位置を計測する位置計測系と;
前記第1ステージの一部を検出可能な検出装置と;
前記第1ステージとは独立に移動可能な第2ステージと;
前記第1ステージの位置を前記位置計測系を用いて計測しつつ、前記検出装置を用いて前記プレートの一部を検出するとともに、その検出結果と対応する前記位置計測系の計測結果とに基づいて前記プレートの外周エッジの位置情報を取得する外周エッジ位置取得装置と;
前記第1ステージに搭載されたプレートの外周エッジが前記第2ステージと衝突しないように、前記外周エッジの位置情報に基づいて前記第1ステージの位置と前記第2ステージの位置との少なくとも一方を制御する制御装置と;
を備える露光装置。 - 請求項1に記載の露光装置において、
前記第1ステージは、前記物体を保持する露光ステージを含み、
前記プレートの表面は、前記露光ステージに保持された物体の表面とほぼ面一であることを特徴とする露光装置。 - 請求項1に記載の露光装置において、
前記第1ステージは、少なくとも一つの計測部材を有する計測ステージを含むことを特徴とする露光装置。 - 請求項1に記載の露光装置において、
前記制御装置は、前記位置計測系の計測結果と前記外周エッジの位置情報とに基づいて、前記第1ステージの位置を制御することを特徴とする露光装置。 - 請求項1に記載の露光装置において、
前記第1ステージ上に液体を供給して液浸領域を形成するための液浸機構をさらに備え、
前記液浸機構によって供給される液体を介して前記物体に露光ビームが照射され、
前記プレートによって、前記第1ステージの上面に撥液面が形成されることを特徴とする露光装置。 - 請求項1に記載の露光装置において、
前記検出装置は、前記物体上のアライメントマークの検出にも使用されることを特徴とする露光装置。 - 請求項1〜6のいずれか一項に記載の露光装置を用いるリソグラフィ工程を含むデバイス製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006545156A JP4877653B2 (ja) | 2004-11-18 | 2005-11-18 | 露光装置及びデバイス製造方法 |
Applications Claiming Priority (4)
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JP2004335050 | 2004-11-18 | ||
JP2004335050 | 2004-11-18 | ||
PCT/JP2005/021214 WO2006054682A1 (ja) | 2004-11-18 | 2005-11-18 | 位置計測方法、位置制御方法、計測方法、ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2006545156A JP4877653B2 (ja) | 2004-11-18 | 2005-11-18 | 露光装置及びデバイス製造方法 |
Related Child Applications (2)
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JP2010022152A Division JP4986187B2 (ja) | 2004-11-18 | 2010-02-03 | 計測方法、ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2011060379A Division JP5630345B2 (ja) | 2004-11-18 | 2011-03-18 | 駆動方法、露光方法及びデバイス製造方法 |
Publications (2)
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JPWO2006054682A1 JPWO2006054682A1 (ja) | 2008-06-05 |
JP4877653B2 true JP4877653B2 (ja) | 2012-02-15 |
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JP2006545156A Expired - Fee Related JP4877653B2 (ja) | 2004-11-18 | 2005-11-18 | 露光装置及びデバイス製造方法 |
JP2010022152A Expired - Fee Related JP4986187B2 (ja) | 2004-11-18 | 2010-02-03 | 計測方法、ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2011060379A Expired - Fee Related JP5630345B2 (ja) | 2004-11-18 | 2011-03-18 | 駆動方法、露光方法及びデバイス製造方法 |
JP2012016374A Active JP5392512B2 (ja) | 2004-11-18 | 2012-01-30 | 露光方法及び露光装置、並びにデバイス製造方法 |
JP2012016376A Expired - Fee Related JP5403296B2 (ja) | 2004-11-18 | 2012-01-30 | ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2012016375A Expired - Fee Related JP5447545B2 (ja) | 2004-11-18 | 2012-01-30 | ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2014067492A Active JP5721064B2 (ja) | 2004-11-18 | 2014-03-28 | リソグラフィ投影装置、オフセットを決定するための方法、露光方法、並びにデバイス製造方法 |
JP2014258841A Expired - Fee Related JP5900763B2 (ja) | 2004-11-18 | 2014-12-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015225270A Expired - Fee Related JP5967393B2 (ja) | 2004-11-18 | 2015-11-18 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016004009A Expired - Fee Related JP6143135B2 (ja) | 2004-11-18 | 2016-01-13 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016123789A Expired - Fee Related JP6229766B2 (ja) | 2004-11-18 | 2016-06-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2017096125A Expired - Fee Related JP6399321B2 (ja) | 2004-11-18 | 2017-05-15 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2018005442A Expired - Fee Related JP6555554B2 (ja) | 2004-11-18 | 2018-01-17 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
JP2019008324A Pending JP2019066887A (ja) | 2004-11-18 | 2019-01-22 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
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JP2010022152A Expired - Fee Related JP4986187B2 (ja) | 2004-11-18 | 2010-02-03 | 計測方法、ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2011060379A Expired - Fee Related JP5630345B2 (ja) | 2004-11-18 | 2011-03-18 | 駆動方法、露光方法及びデバイス製造方法 |
JP2012016374A Active JP5392512B2 (ja) | 2004-11-18 | 2012-01-30 | 露光方法及び露光装置、並びにデバイス製造方法 |
JP2012016376A Expired - Fee Related JP5403296B2 (ja) | 2004-11-18 | 2012-01-30 | ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2012016375A Expired - Fee Related JP5447545B2 (ja) | 2004-11-18 | 2012-01-30 | ロード方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2014067492A Active JP5721064B2 (ja) | 2004-11-18 | 2014-03-28 | リソグラフィ投影装置、オフセットを決定するための方法、露光方法、並びにデバイス製造方法 |
JP2014258841A Expired - Fee Related JP5900763B2 (ja) | 2004-11-18 | 2014-12-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015225270A Expired - Fee Related JP5967393B2 (ja) | 2004-11-18 | 2015-11-18 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016004009A Expired - Fee Related JP6143135B2 (ja) | 2004-11-18 | 2016-01-13 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016123789A Expired - Fee Related JP6229766B2 (ja) | 2004-11-18 | 2016-06-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2017096125A Expired - Fee Related JP6399321B2 (ja) | 2004-11-18 | 2017-05-15 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2018005442A Expired - Fee Related JP6555554B2 (ja) | 2004-11-18 | 2018-01-17 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
JP2019008324A Pending JP2019066887A (ja) | 2004-11-18 | 2019-01-22 | 露光装置及び露光方法、並びに半導体デバイス製造方法 |
Country Status (10)
Country | Link |
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US (12) | US8059260B2 (ja) |
EP (4) | EP3346486A1 (ja) |
JP (14) | JP4877653B2 (ja) |
KR (10) | KR101452483B1 (ja) |
CN (5) | CN101057316B (ja) |
HK (7) | HK1198211A1 (ja) |
IL (3) | IL183280A0 (ja) |
SG (4) | SG2014009179A (ja) |
TW (8) | TWI536429B (ja) |
WO (1) | WO2006054682A1 (ja) |
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Patent Citations (4)
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WO2004053955A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2004207696A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2004207710A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
JP2004259966A (ja) * | 2003-02-26 | 2004-09-16 | Nikon Corp | 露光装置及びデバイス製造方法 |
Cited By (3)
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JP2014131082A (ja) * | 2004-11-18 | 2014-07-10 | Nikon Corp | 露光装置 |
JP2015111682A (ja) * | 2004-11-18 | 2015-06-18 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016040624A (ja) * | 2004-11-18 | 2016-03-24 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
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