WO2004066371A1 - 露光装置 - Google Patents
露光装置 Download PDFInfo
- Publication number
- WO2004066371A1 WO2004066371A1 PCT/JP2004/000570 JP2004000570W WO2004066371A1 WO 2004066371 A1 WO2004066371 A1 WO 2004066371A1 JP 2004000570 W JP2004000570 W JP 2004000570W WO 2004066371 A1 WO2004066371 A1 WO 2004066371A1
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- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- exposure
- reticle
- mask
- partial
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention relates to an exposure apparatus used when manufacturing a semiconductor integrated circuit, a liquid crystal display element, a thin-film magnetic head, and other microphone devices using lithography technology.
- a photomask or reticle (hereinafter collectively referred to as a “reticle”) is applied to a substrate (a semiconductor wafer or a glass plate coated with a photoresist) to be exposed. , A mask) is used.
- a system is also being built that incorporates functions such as a CPU (central processing unit) and a RAM (R and om Access Memory) in one semiconductor integrated circuit.
- functions such as a CPU (central processing unit) and a RAM (R and om Access Memory) in one semiconductor integrated circuit.
- a region to be exposed on the substrate is divided into a plurality of partitioned regions (hereinafter, sometimes referred to as shots or shot regions) and In some cases, stitching exposure is performed in which images of patterns corresponding to shots are sequentially projected and exposed.
- a density filter for forming an inclined illuminance distribution in a portion corresponding to the overlapping portion on the mask is provided. Since this density filter is arranged at a position almost optically conjugate with the mask, if foreign matter such as dust and iris adheres to the density filter, the required exposure dose distribution is locally affected by these effects. It cannot be obtained locally. Therefore, there is a problem that a portion where the exposure amount locally changes on the substrate finally, and a line width changes at this portion.
- An object of the present invention is to reduce the influence of foreign matter adhering to a density filter and accurately form a fine pattern with a uniform line width. Furthermore, the manufacturing cost of a projection optical system required for design and assembly To provide an exposure device that can minimize the rise of That is.
- the illuminance distribution of exposure light is changed to the peripheral portion.
- a reduction optical system is arranged between the density filter and the mask. An exposure apparatus is provided.
- a reduction optical system is placed between the density filter and the mask to reduce the light passing through the density filter and irradiate the mask, even if foreign matter such as dust adheres to the density filter, The effects of foreign matter (eg, local changes in the illuminance distribution of light illuminating the mask) can be reduced. As a result, the illuminance distribution on the sensitive object can be made uniform, so that a fine pattern with a uniform line width can be faithfully formed (that is, a fine pattern can be formed with high fidelity). Can be).
- the reduction magnification of the reduction optical system is set to 1 / 1.5 to 1 / 1.6. If the reduction magnification of the reduction optical system is set to this level, it is possible to reduce the influence of foreign matter adhering to the density filter without excessively increasing the size of the apparatus.
- the transfer of the pattern by exposing the area is performed collectively in a state where the density filter, the mask, and the sensitive object are stationary.
- the step is performed while the density filter, the mask, and the sensitive object are synchronously moved with respect to the exposure light.
- the pattern formed on the mask includes a plurality of partial patterns divided into a plurality of regions, and each of the partial patterns is the pattern. It can be transferred to at least one of the multiple regions.
- an illumination optical system including the density filter and the reduction optical system is provided, and an illumination area of the illumination optical system on the mask illuminates at least one of the partial patterns. It is preferable that the size is set to the size that can be obtained. With this configuration, the illumination area of the illumination optical system may be large enough to illuminate any one of the partial patterns, so that the mask can be illuminated with the light reduced by the reduction optical system. It is convenient.
- the size of the illuminated area encompasses at least one partial pattern to be transferred onto the sensitive object in one exposure operation.
- the illumination area is exposed once in a direction (non-scanning direction) orthogonal to the scanning direction in which the mask is moved.
- the size should be at least as large as at least one partial pattern to be transferred onto the sensitive object by operation.
- the exposure apparatus further comprising: a projection optical system that projects a pattern formed on the mask onto the sensitive object, wherein an exposure area of the projection optical system includes at least the partial pattern.
- the size can be set to a size that can be projected onto the sensitive object, or a size that allows a part of the partial pattern to be projected onto the sensitive object.
- the exposure apparatus further comprising: a light-shielding member that shields a part of a light-reducing portion of the density filter in accordance with a position on the sensitive object of an area where the pattern is to be transferred. Can be.
- the “region where the peripheral portion partially overlaps on the sensitive object” means a region where all the patterns formed on one mask are transferred (shot region) and a plurality of portions formed on the mask. This means that a part (eg, one) of the pattern is transferred (partial shot area).
- there are multiple Not all patterns to be transferred to the region need be formed on the same mask, and may be formed separately on a plurality of different masks.
- the sensitive object is filtered through a density filter for defining the intensity distribution of the energy beam to a predetermined distribution, and a mask having a pattern to be transferred onto the sensitive object.
- a density filter for defining the intensity distribution of the energy beam to a predetermined distribution
- a mask having a pattern to be transferred onto the sensitive object.
- an exposure apparatus for irradiating with an energy beam there is provided an exposure apparatus in which a reduction optical system is arranged between the density filter and the mask.
- FIG. 1 is a diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention
- FIG. 2A is a top view showing an example of the configuration of the density filter
- FIG. 2B is a diagram showing an example of a mark formed on the density filter.
- FIG. 3 is a diagram showing a configuration of a reticle used in the exposure apparatus of the present embodiment.
- FIGS. 4A and 4B are diagrams showing a configuration of an illuminance distribution detection sensor.
- FIG. 5 is a diagram for explaining a manufacturing process when a microphone opening device such as a semiconductor integrated circuit is manufactured using a reticle.
- FIG. 6 shows the transfer of the first partial pattern to the shot area.
- Fig. 7 shows the transfer of the second partial pattern to the shot area.
- Fig. 8 shows the transfer of the third partial pattern to the shot area.
- FIG. 9 is a diagram showing a reticle alignment mechanism. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a view showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention.
- This exposure apparatus is a stitching type projection exposure apparatus of a step-and-repeat type. You.
- the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to the XYZ rectangular coordinate system.
- the XYZ rectangular coordinate system is set so that the X-axis and the Z-axis are parallel to the paper surface, and the Y-axis is set in a direction perpendicular to the paper surface.
- the XY plane is actually set as a plane parallel to the horizontal plane, and the Z axis is set vertically upward.
- an ultraviolet pulse light IL (hereinafter, referred to as exposure light IL) as light (here, an ArF excimer laser) from a light source 100 is transmitted through an optical path between the illumination optical system 1 and the illumination optical system 1.
- the beam passes through a beam matching unit (BMU) 101 including a movable mirror and the like for positional matching, and enters a variable attenuator 103 as an optical attenuator via a pipe 102.
- BMU beam matching unit
- the main control system 9 communicates with the light source 100 to control the amount of exposure to the resist on the substrate 4 as a sensitive object, thereby controlling the start and stop of light emission, the oscillation frequency and the pulse energy.
- the dimming rate for the exposure light IL in the variable dimmer 103 is adjusted stepwise or continuously.
- Exposure light IL passing through the variable attenuator 103 passes through a beam shaping optical system composed of lens systems 104 and 105 arranged along a predetermined optical axis, and then becomes an optical integrator ( (Homogenizer) 106 incident.
- a fly-eye lens is used as the optical lens 106, so that it is also referred to as a fly-eye lens 106 below.
- a rod integrator internal reflection type integrator
- a diffractive optical element may be used.
- the optical integrators 106 may be arranged in two stages in series with an optical system interposed therebetween in order to further improve the uniformity of the illuminance distribution.
- An aperture stop system 107 is arranged on the exit surface of the fly-eye lens 106.
- a circular aperture stop for normal illumination, an aperture stop for deformed illumination composed of a plurality of eccentric small apertures, an aperture stop for orbicular illumination, and the like are arranged to be switchable.
- the aperture stop system 107 it is disposed between the light source 100 (particularly the variable dimmer 103) and the fly-eye lens 106, and the exposure light is arranged on the pupil plane of the illumination optical system. Multiple diffractive optical elements with different IL distribution areas, zoom lens systems, etc.
- the transmittance and the reflectance of the beam splitter 108 are measured with high precision in advance and stored in the memory in the main control system 9, and the main control system 9 is indirectly based on the detection signal of the integrator sensor 109. It is configured such that the incident light amount of the exposure light IL to the projection optical system 3 (and the light amount or the illuminance of the exposure light IL on the substrate 4 or illuminance) can be monitored.
- the exposure light IL transmitted through the beam splitter 108 enters the reticle blind mechanism 110.
- the reticle blind mechanism 110 is configured to include four movable blinds (light shields) 111 (A to D) and a driving mechanism thereof. By setting these four blinds 111 at appropriate positions, a rectangular illumination area is formed in the field of view of the projection optical system 3. Further, the blind 111 is also used to shield a part of a light reducing portion formed on a density filter F described later.
- the exposure light IL shaped into a rectangular shape by the blind 1 1 1 1 of the reticle blind mechanism 1 1 1 enters the density filter F mounted on the filter stage FS.
- the density filter F basically has a configuration as shown in FIG. 2A. FIG.
- the density filter F is composed of a light-shielding portion 121 formed by depositing a light-shielding material such as chrome on a light-transmitting substrate such as quartz glass or quartz glass doped with fluorine. It has a light-transmitting portion 122 on which no material is vaporized, and a light-reducing portion (attenuating portion) 123 on which the light-shielding material is vapor-deposited while changing its existence probability.
- a light-shielding portion 121 formed by depositing a light-shielding material such as chrome on a light-transmitting substrate such as quartz glass or quartz glass doped with fluorine. It has a light-transmitting portion 122 on which no material is vaporized, and a light-reducing portion (attenuating portion) 123 on which the light-shielding material is vapor-deposited while changing its existence probability.
- the shape of the light transmitting part 122 and the outer shape of the light reducing part 123 are formed in a rectangular shape. This is for the following reasons.
- the pattern formed on the reticle is collectively transferred to a shot set on the substrate 4, the light transmitting portion has a shape substantially similar to the outer shape of the region where the pattern is formed ( Approximately square) Was.
- this exposure apparatus uses a reticle Ri in which a partial pattern obtained by dividing a pattern to be transferred to a shot into a plurality of parts is formed, and these partial patterns are sequentially arranged in a partial area of the shot. By transferring, the pattern is transferred to one shot.
- each area to which a partial pattern is transferred in one shot is referred to as a partial shot area.
- the shape of the light transmitting portion 122 and the outer shape of the light reducing portion 123 are set to a strip shape (rectangular shape) substantially similar to the partial pattern formed on the reticle Ri.
- the light-attenuating section 123 is formed by depositing a light-shielding material in the form of dots, and the dot size is determined by setting the density filter F at the position shown in FIG. This is smaller than the resolution limit of an optical system having a plurality of optical elements (112 to 116) arranged between the reticle R i.
- the dots are formed by increasing their existence probabilities so that the extinction ratio increases linearly from the inside (the light-transmitting portion 122 side) to the outside (the light-shielding portion 121 side). I have. However, the dots may be formed by increasing their existence probabilities so that the dimming rate increases in a curve from the inside to the outside.
- the dot arrangement method is such that, instead of arranging dots at the same pitch P in the same transmittance portion, P + R is obtained by adding a random number R having a Gaussian distribution to each dot to P. It is good to arrange with. The reason is that diffracted light is generated due to the dot arrangement, and in some cases, the light does not reach the photosensitive substrate beyond the numerical aperture (NA) of the illumination system, resulting in a large error from the design transmittance. .
- NA numerical aperture
- all dot sizes be the same size.
- the reason for this is that if a plurality of dot sizes are used, when an error from the design transmittance due to the above-described diffraction occurs, the error is complicated, that is, transmittance correction is complicated.
- the dot shape is desirably a rectangle (square) where the shape error due to the process can be easily measured. If there is a shape error, the transmittance correction is advantageous if the amount of error can be measured.
- a plurality of alignment marks 124 A, 124 B, 124 C, and 124 D are formed on the light shielding portion 121. These marks 1 2 4 A, 1 2 4 B, 1 2 4 As shown in FIG. 2A, C and 124D are formed by removing a part of the light shielding part 121 of the density filter F and forming a rectangular or other opening (light transmitting part). 24 A, 124 B, 124 C and 124 D can be formed to be the mark.
- FIG. 2B is a top view showing an example of a mark formed on the density filter F.
- a slit mark 125 composed of a plurality of slit-shaped openings is employed. This slit mark 125 is used to measure the position in the X direction and the Y direction.
- the slit element formed by arranging the slit formed in the Y direction in the X direction and the slit formed in the X direction in the Y direction It is a combination of arrayed mark elements.
- the position of the density filter F in the Z direction, the tilt amount in the Z direction, and the projection magnification are based on the measurement results of the position information of the marks 124A, 124B, 124C, and 124D. Is adjusted.
- a device that is provided at least in part on the sample stage 5 and detects the mark of the density filter F with an image sensor can be used. In this case, move the density filter F in the direction of the optical axis and measure the marks 124A, 124B, 124C, 124D or mark 125 at multiple Z positions, and measure the signal strength.
- the Z position at which the signal contrast is maximized is determined, and this is set as the best focus position, and is fixed from this best focus position (a position conjugate to the object plane or image plane of the projection optical system 3) or this best focus position.
- the density filter F is set at a position defocused by a certain amount from the best focus position.
- the number of marks provided on the density filter is not limited to four, and at least one mark may be provided according to the setting accuracy of the density filter.
- the density filter is arranged so that the optical axis of the illumination optical system substantially coincides with the center, and four marks are provided symmetrically with respect to the center (optical axis).
- a mark it is preferable to arrange the marks so as not to be point-symmetric with respect to the center, or to arrange the marks in a point-symmetric manner and form a recognition pattern separately.
- the dimming part 123 is formed around the light transmitting part 122 (four sides).
- the entire dimming unit 123 is not always used. That is, in accordance with the position of the partial shot area on the substrate 4 where the partial pattern is to be transferred, the blind 111 serving as a light shielding member is controlled to block a part of the light reducing section 123, or The entire darkening section 1 2 3 is used. This is because in stitching exposure, the exposure amount of the overlapping portion is set to be inclined in order to keep the exposure amount of the adjacent shot (partial shot region) in the overlapping portion constant, and the adjacent shot (partial shot region) is set.
- FIG. 2A shows a case where a density filter F in which a light-reducing portion 123 is formed around a light-transmitting portion 122 set in a strip shape as shown in FIG.
- the transfer of the partial pattern is performed while one, two, or three of the four sides are shielded.
- the density filter F not only the above-described glass substrate with the light-shielding portion and light-shielding portion formed of a light-shielding material such as chrome but also the light-shielding portion and the light-shielding portion using a liquid crystal element or the like. It is also possible to use a device in which the position and the dimming characteristics of the dimming unit can be changed as necessary. In this case, it is not necessary to control the blinds 111, and it is possible to flexibly cope with various requirements in the specifications of the microphone opening device to be manufactured, which is highly efficient.
- the filter stage FS finely moves or moves the held density filter F in the rotation direction and the translation direction in the XY plane.
- the X- and Y-coordinates and the rotation angle of the filter stage FS are measured by a laser interferometer (not shown), and the operation of the filter stage FS is controlled by the measured values and control information from the main control system 9. You.
- the exposure light IL that has passed through the density filter F enters the condenser lens system 113 and the imaging lens system 114 via the reflection mirror 112.
- the condenser lens system 113 and the imaging lens system 114 are optical systems corresponding to the reduction optical system according to the present invention,
- the reduction ratio is set to 5 to 1 / 1.6.
- the reason why the optical system including the condenser lens system 113 and the imaging lens system 114 is set as the reduction optical system is to reduce the influence of foreign substances such as dust and dirt attached to the density filter F described above. is there.
- the density filter F is located at a position optically common to the object surface or the image surface of the projection optical system 3 (the surface on which the pattern forming surface of the reticle Ri is arranged) or at a position defocused by a certain amount from this position. Therefore, if foreign matter adheres to the density filter F, the uniform illumination distribution on the reticle R i is locally distorted, and the exposure amount on the substrate 4 is locally changed. This is because there is a problem in forming a fine pattern having a uniform line width.
- setting the reduction ratio of the condenser lens system 113 and the imaging lens system 114 to 1.5 to 11.6 is a magnification that can reduce the effect of foreign matter attached to the density filter F.
- the large size of the illumination optical system 1 (especially, the large size of the optical system (112 to 116) disposed between the density filter F and the reticle R i) is caused. This is because an illumination area of a required size is formed on the reticle Ri without any problem.
- the exposure light IL through the imaging lens system 114 is similar to the rectangular opening of the blind 111 on the circuit pattern area of the reticle Ri via the reflection mirror 115 and the main capacitor lens system 116. Irradiate the illuminated area (the area where the reticle Ri is irradiated with the exposure light IL) with a predetermined intensity distribution.
- the arrangement surface of the opening of the blind 111 is a pattern forming surface of the reticle Ri by a composite system with the condenser lens system 113, the imaging lens system 114, and the main condenser lens system 116.
- the blinds 111 are arranged away from the conjugate plane of the reticle Ri with the pattern forming surface, for example, they may be arranged almost conjugate with the density filter F.
- the condenser lens system 113 and the imaging lens system 114 are a reduction system, but an optical system including all optical elements disposed between the density filter F and the reticle R i ( 1 13, 114, 116) may constitute the reduction optical system of the present invention.
- the illumination area set on the reticle R i is set in a strip shape (rectangular shape) according to the outer shape of the partial pattern, and has a size capable of illuminating one whole of the partial pattern. Is set.
- the reticle Since the illumination area on the lens Ri is limited by the density filter F and the blinds 111, the density filter F is changed according to the reticle pattern, and the density of the light-transmitting part 122 is changed to another density. You may comprise so that it can replace with a filter.
- the reticle Ri held by the reticle stage 2 is illuminated by the exposure light IL emitted from the illumination optical system 1.
- the reticle Ri used in the exposure apparatus of the present embodiment is formed with a plurality of partial patterns formed by dividing a pattern to be transferred to a shot set on the substrate 4 into a plurality of rectangular (rectangular) regions. I have.
- FIG. 3 is a diagram showing a configuration of a reticle Ri used in the exposure apparatus.
- the portions denoted by reference numerals 200, 201, and 202 are the supporting surfaces (supports) on which the reticle Ri is supported when the reticle Ri is supported on the reticle stage 2. Holding position).
- a support surface extending in the X direction along a pair of sides 150 and 151 extending in the X direction. 2 0 0, 2 0 1, 2 0 2 are set, 2 support surfaces 2 0 0, 2 0 1 are arranged along one side 150 0, and along the other side 1 5 1
- One support surface 202 is arranged.
- the reticle Ri has a plurality of strip-shaped partial patterns (in FIG. 3, three partial patterns 161, 162, 163) arranged in the Y direction, with the longitudinal direction set in the X direction. Is formed.
- the reticle R i bends due to its own weight, but in this example, due to the arrangement of the three support surfaces 200 to 202 shown in FIG.
- the radius will be greater in the Y direction than in the X direction. Therefore, in order to suppress an imaging error (especially a focus error) on the substrate 4 caused by the radius at the time of transferring each partial pattern, the reticle Ri uses a plurality of partial patterns 16 1 to 1 63 is formed with its arrangement direction being the Y direction.
- the reticle Ri is held on the reticle stage 2 such that the arrangement direction of the plurality of partial patterns coincides with the direction in which the deflection due to its own weight increases in the X and Y directions (the Y direction in this example). .
- the number of partial patterns to be formed on the reticle R i and the width in the Y direction of each partial pattern can be set according to the amount of deflection of the reticle Ri in the Y direction ⁇ formation position on the reticle Ri. Good.
- the relative positional relationship between the imaging surface of the projection optical system 3 and the substrate 4 is
- an adjusting device an image forming adjusting device described later
- the image forming plane of the projection optical system 3 and the surface of the substrate 4 are made substantially coincident over the entire projection area (exposure area) for each partial pattern (ie, The surface of the substrate 4 within the depth of focus of the projection optical system 3).
- the number and width of the partial patterns so that the amount of deflection in each partial pattern is suppressed below the allowable value. Should be determined.
- the size of multiple partial patterns is
- the width in the Y direction may be different.
- the shape, the position in the X direction, and the like may be different.
- the partial patterns 161, 162, and 163 are transferred to the partial shot area of the substrate 4, the patterns are transferred so that the edges overlap by stitching exposure. For this reason, the partial patterns 16 1, 162, and 163 are not simply divided into three patterns of the pattern to be transferred to the shot of the substrate 4, but are formed by dividing the end (peripheral portion) 16 1 b of the partial pattern 16 1
- the same pattern is formed on the corresponding end portion (peripheral portion) 162a of the partial pattern 162, and the same end portion 162b of the partial pattern 162 and the corresponding end portion 163a of the partial pattern 163 have the same shape. A pattern has been formed.
- reference numerals 164 and 165 denote alignment mark forming areas in which reticle alignment marks 21B and 21A for positioning reticle Ri are formed, respectively.
- FIG. 1 is referred to again.
- a reticle library 16 b having a shelf shape is arranged beside the reticle stage 2.
- the reticle library 16 b has N (N is a natural number) support plates 17 b sequentially arranged in the Z direction.
- the reticle R1, ..., RN is mounted on the support plate 17b.
- Each of the patterns of the reticles R 1,..., RN includes a plurality of partial patterns as shown in FIG.
- the reticle library 16b is supported movably in the Z direction by a slide device 18b, and has an arm between the reticle stage 2 and the reticle lip library 16b that can rotate freely and move within a predetermined range in the Z direction.
- Loader 19 b is placed.
- Main control system 9 uses reticle library 16 b via slide device 18 b After adjusting the position of the loader 19b in the Z direction, the operation of the loader 19b is controlled so that the desired reticle R is moved between the desired support plate 17b in the reticle library 16b and the reticle stage 2. 1 to RL can be delivered.
- a transfer system for transferring the reticles R1 to RN between a sealed cassette (such as a Sumif pod) and the reticle library 16b is also provided.
- a reticle of the type (number) required for exposing a predetermined number of wafers or a predetermined number of wafers is loaded into an exposure apparatus in advance by a sealed cassette and placed on a reticle library 16. Therefore, even for a wafer that requires the use of a plurality of reticles, it is possible to shorten the reticle replacement time and improve the throughput (shortening the processing time).
- the image of the pattern in the illuminated area of the reticle Ri is exposed on the surface of the substrate 4 (ie, on the substrate 4) at a reduction ratio of 1 / a (where ⁇ ;
- the light IL is projected onto an exposure area conjugate with the illumination area with respect to the projection optical system 3.
- the exposure area of the projection optical system 3 is set to have substantially the same size as the partial shot area set on the substrate 4, that is, a size capable of projecting the partial pattern onto the substrate 4.
- the pattern of the reticle Ri is a plurality of partial patterns
- the exposure area of the projection optical system 3 is set to a size capable of projecting the partial patterns onto the substrate 4.
- the reticle stage 2 moves the held reticle Ri in the XY plane in the rotation direction and the translation direction. Further, in the present embodiment, since the plurality of partial patterns formed on the reticle R i must be sequentially transferred onto the substrate 4, the reticle stage 2 is at least a distance of about the width of the reticle R i in the Y direction. It is configured to be movable only.
- the reticle stage 2 is provided with a laser interferometer (not shown), and the X- and Y-coordinates and rotation angle of the reticle stage 2 are measured by the laser interferometer.
- the operation of the reticle stage 2 is controlled by the measured value and the control information from the main control system 9.
- the reticle stage 2 is configured to be movable in the optical axis AX direction of the projection optical system 3 and to be able to change the angle with respect to the optical axis AX.
- the position and orientation of the reticle Ri in the Z direction can be adjusted. These are controlled by control information from the main control system 9.
- the substrate (wafer in this embodiment) 4 is held on a substrate holder (not shown) such as a pin chuck holder by vacuum suction or the like, and the substrate holder is fixed on a sample table (substrate table) 5.
- the sample stage 5 is set on a substrate stage 6 via a drive mechanism (not shown).
- This drive mechanism enables the sample stage 5 to be finely movable in the Z direction parallel to the optical axis of the projection optical system 3 and to be tiltable with respect to the XY plane. It consists of an actuator (such as a voice coil motor or EI core). Note that the substrate 4 may be non-sucked or softly sucked on a holder composed of three pins.
- an oblique incidence multi-point focal position detection system (hereinafter referred to as a focus sensor AF) having a transmission system AF 1 and a light reception system AF 2 that detects the position of the substrate 4 in the optical axis direction (Z direction) of the projection optical system 3. ) Is provided.
- the focus sensor AF irradiates a plurality of measurement points in an exposure area (corresponding to a partial shot area) where a reduced image of the partial pattern is projected in the field of view of the projection optical system 3 with a light beam.
- the light reflected by the plate 4 is independently received, and the position of the substrate 4 in the Z direction at each measurement point (in this example, a predetermined reference plane, for example, the surface of the substrate 4 with respect to the image plane of the projection optical system 3) (Amount of displacement).
- the measured value of the focus sensor AF is output to the main control system 9, and the main control system 9 drives the sample stage 5 via the above-mentioned driving mechanism based on the measured value, and focuses the light on the substrate 4 (optical position).
- AX axis position) and tilt angle control focus and leveling adjustment).
- the image plane of the projection optical system 3 substantially matches the surface of each partial shot area on the substrate 4 within the exposure area of the projection optical system 3, that is, the entire surface of the partial shot area within the exposure area It will be set within the depth of focus of 3.
- the device for adjusting the imaging state of the pattern image on the substrate 4 is a focus sensor AF used for focus and leveling adjustment and only the above-described drive mechanism.
- the imaging error caused by the installation environment of the projection optical system 3, heat accumulation, and the like is set to be substantially zero or less than an allowable value.
- An illuminance distribution detecting sensor (so-called illuminance unevenness sensor) 126 for detecting an illuminance distribution on the reference mark member 12 for positioning and the substrate 4 is fixed on the sample table 5.
- the substrate stage 6 moves and positions the sample table 5 (substrate 4) on the base 7 in the X and Y directions by, for example, a linear motor.
- a movable mirror 8 m is fixed on the upper part of the sample table 5, and a laser interferometer 8 is arranged to face the movable mirror 8 m.
- the moving mirror 8 m is provided with a moving mirror extending in the X direction and a moving mirror extending in the Y direction on the sample stage 5.
- a laser interferometer is provided facing the movable mirror.
- a reflection surface formed by mirror-finishing the end surface (side surface) of the sample table 5 may be used.
- the X- and Y-coordinates and the rotation angle of the sample table 5 are measured by the laser interferometer 8, and the measured values are supplied to the stage control system 10 and the main control system 9.
- the stage control system 10 controls the operation of the linear motor and the like of the board stage 6 based on the measured values and the control information from the main control system 9. Further, although illustration is omitted in FIG. 1, the measurement result from the laser interferometer provided on the reticle stage 2 is supplied to the main control system 9, and the main control system 9 responds to this measurement result. Controls the X coordinate, Y coordinate, rotation angle, Z coordinate, and angle of the reticle stage 2 with respect to the optical axis AX.
- FIG. 4A and 4B are diagrams showing the configuration of the illuminance distribution detection sensor 126.
- FIG. The illuminance distribution detection sensor 126 is configured to move the substrate stage 6 in a plane horizontal to the substrate 4 while the exposure light IL is being illuminated via the projection optical system 3, thereby obtaining a spatial distribution of the exposure light IL. In other words, it is for measuring the intensity distribution (illuminance distribution) of the exposure light.
- the illuminance distribution detection sensor 126 is provided under the light shielding plate 55 having a rectangular (square in this embodiment) opening (or pinhole) 54.
- a sensor 56 is provided, and a detection signal from the photoelectric sensor 56 is output to the main control system 9.
- light may be guided by a light guide or the like, and the amount of received light may be detected by a photoelectric sensor or the like in other portions.
- the light-shielding plate 55 is usually formed by depositing a metal such as chromium (Cr) on a substrate such as quartz. However, when a metal such as chromium is deposited, the light exposed on the light-shielding plate 55 is exposed. The light reflectance is high and the amount of reflection of the exposure light is large. As a result, the light reflected by the light shielding plate 55 is reflected by the projection optical system or the reticle, thereby generating a flare.
- the illuminance distribution detection sensor 1 26 is provided for measuring the illuminance distribution of the exposure light when the substrate 4 is exposed, and measures the illuminance distribution of the exposure light during the actual exposure. Is most preferred.
- the illuminance distribution of the exposure light at the time of actual exposure is Cannot measure accurately.
- the reflectivity of the upper surface of the light-shielding plate 5 5 is set to be substantially the same as the reflectivity of the substrate 4. The effect of reflected light is reduced.
- a film having a reflectance substantially equal to the reflectance of the substrate 4 in the wavelength region of the exposure light is formed on the upper surface of the light shielding plate 55.
- chromium 58 is vapor-deposited on a quartz transparent substrate 57, and a thin film 59 of oxidized chromium is further formed on chromium 58.
- the same photoresist 60 as the photoresist applied to the substrate 4 may be applied thereon with the same film thickness.
- the reflectivity of the upper surface of the light-shielding plate 55 is adjusted by appropriately selecting not only the material of the film formed on the surface but also the thickness and the configuration (the number of layers, the thickness of each layer, the material of each layer, and the like). be able to.
- the reflectance of the upper surface of the light-shielding plate 55 is set in consideration of all such conditions.
- a storage device 11 such as a magnetic disk device is connected to the main control system 9, and the storage device 11 stores an exposure data file.
- the exposure data file contains the design information of the reticles R1 to RN, the mutual positional relationship of the reticles R1 to RN, and the blinds 111 to be controlled for each partial pattern formed on the reticle R1 to RN.
- Information, alignment information, information indicating the optical characteristics of the projection optical system 3, information on the radius of the reticle Ri, and the like are recorded.
- Information indicating the optical characteristics of the projection optical system 3 includes, for example, aberrations such as tilt of an image plane and curvature of field.
- This information is information obtained from design values of the projection optical system 3 or actual measured values of the optical characteristics of the projection optical system 3.
- the optical characteristics of the projection optical system 3 change due to changes in the installation environment (temperature, air pressure, etc.) and heat accumulation in the projection optical system 3 due to exposure of the exposure light IL. Therefore, when the optical characteristics of the projection optical system 3 are adjusted by this mechanism, the projection optical system 3 stored in the exposure data file in the storage device 11 is provided. It is preferable to update the information indicating the optical characteristics of the image.
- the information on the radius of the reticle R i is the amount of radius in at least each partial pattern of each reticle in the Y direction when the reticle R i is held on the reticle stage 2, and in this example, the radius is The measured value is a calculated value obtained from a simulation or the like. Note that, by providing a sensor having the same configuration as the focus sensor AF on the reticle side, for example, the amount of deflection in the Z direction at at least a plurality of points separated in the Y direction for each partial pattern can be determined. Actual measured values obtained by detection may be used. Further, when the configuration (the size and position of the partial pattern, etc.) is substantially the same for a plurality of reticles, a set of bending amounts common to the plurality of reticles may be stored.
- the exposure apparatus exposes one shot while overlapping and exposing a plurality of partial patterns formed on one reticle, and further performs overlap exposure between shots using a plurality of reticles. is there.
- a micro device such as a semiconductor integrated circuit using the reticle R i and this exposure apparatus will be described.
- FIG. 5 is a diagram for explaining a manufacturing process when manufacturing a micro device such as a semiconductor integrated circuit using the reticle Ri.
- Wafer W (substrate 4) shown in Fig. 5 Is a microdepice finally manufactured.
- a circuit pattern 27 of a certain layer of a semiconductor integrated circuit to be finally manufactured is designed.
- the circuit pattern 27 is formed by forming various line-and-space patterns (or isolated patterns) and the like in a rectangular area having a width of orthogonal sides dX and dY.
- the circuit pattern 27 is ⁇ times an integer greater than 1 or a half-integer, for example, 4, 5, or 6 etc.), and the width of the orthogonal side is ⁇ ⁇ dX, a′dY.
- the magnification is the reciprocal of the projection magnification (the magnification of the projection optical system 3 in FIG. 1 in this example) of a projection exposure apparatus used for manufacturing a micro device such as a semiconductor integrated circuit.
- the number of divisions of the parent pattern 36 does not have to be the same in the vertical and horizontal directions, and it is not always necessary to match the magnification ⁇ from the circuit pattern 27 to the parent pattern 36.
- drawing data for an electronic beam drawing device (or a laser beam drawing device or the like can also be used) is generated, and the parent patterns P i are respectively defined.
- the first reticle R1 when manufacturing the first reticle R1, a thin film of a mask material such as chromium or molybdenum silicate is formed on a light transmissive substrate such as quartz glass, and an electron beam resist is formed thereon. After the application, a latent image of the same size as the first parent pattern P1 is drawn on the electron beam resist using an electron beam drawing apparatus. At this time, the parent pattern P 1 is divided into a plurality (here, three) and drawn.
- a mask material such as chromium or molybdenum silicate
- the peripheral part (end) of the divided partial pattern 16 1, 16 2, 16 3 is the same as that of the adjacent partial pattern 16 1, 16 2, 16 3 and the pattern of the other parent mask. As described above, instead of being simply divided for superimposition, each area is wider than that of the overlapping part. Thereafter, after the electron beam resist is developed, etching, resist stripping, and the like are performed to form the parent pattern P1 in the pattern region 20 on the reticle R1.
- alignment marks 21 A and 21 B which are two-dimensional marks, are formed on reticle R 1 in a predetermined positional relationship with respect to parent pattern P 1. This arai
- the alignment marks 21A and 21B are formed in the alignment mark forming regions 1664 and 1665 shown in FIG. 3, and in this embodiment, the partial patterns 161 and 162 and 1B are formed. 6 3 It is formed corresponding to each. Similarly, the parent pattern P i and the alignment marks 21 A and 21 B are formed on the other reticles R i using an electronic beam drawing device or the like. The alignment marks 21 A and 21 B are used for alignment with the substrate or the density filter F.
- a reduced area of ⁇ P ⁇ times the parent pattern Pi of the reticle Ri is reduced to a shot area 4 8 on the wafer W coated with the photoresist.
- a predetermined circuit pattern 35 is formed in each shot area 48 by performing transfer while performing screen splicing within.
- a part of the partial patterns 16 1, 16 2 and 16 3 formed on the reticle Ri is overlapped. Perform exposure. If there is a shot for which exposure has already been completed, adjacent to the shot, the shot is transferred while partially overlapping the reduced image of the partial pattern with a factor of ⁇ .
- the parent pattern 36 is divided vertically and horizontally into two parts, and the substrate 4 ( ⁇ ) is formed by using four reticles on which the divided parent patterns are formed.
- the reticle R1 is loaded into the reticle stage 2 via the loader 19b from the reticle library 16b and held therein.
- the main control system 9 moves the reticle stage 2 to dispose the partial pattern 16 1 at a position (illumination area) where the exposure light IL is irradiated, and form the partial pattern 16 1 corresponding to the partial pattern 16 1.
- the alignment is performed using the alignment marks 21A and 21B.
- the exact positional relationship between the alignment marks 21 A and 21 B formed in advance for each of the partial patterns 16 1, 16 2 and 16 3 is measured.
- an alignment mark serving as a reference for example, alignment mark 2 1 A, which is formed corresponding to partial pattern 16 2). It is preferable that the alignment using 21B) has already been performed. In this state, partial putter It is possible to shorten the time for performing the alignment using the alignment mark formed corresponding to the pattern 161 and to perform the alignment with high accuracy.
- the alignment of the density filter F is also performed in parallel with the alignment of the reticle R 1, and furthermore, a part of the darkening portion 123 of the density filter F according to the position of the partial shot area to be exposed on the substrate 4. Is also shaded by blinds 1 1 1.
- FIG. 6 is a diagram showing a state where a partial pattern is first transferred to one shot area.
- the relative positional relationship between the reticle Rl, the projection optical system 3, and the substrate 4, and the upper surface of the substrate 4 are schematically shown.
- the area indicated by reference numeral EA indicates the exposure area of the projection optical system 3
- the rectangular area denoted by reference numerals SH1 to SH4 indicates the shot area set on the substrate 4.
- the shot area SH1 represents the first shot area
- the shot area SH2 represents the second shot area.
- the area denoted by the symbol PH1 in the shot area SH1 represents a partial shot area where a partial pattern is first transferred.
- the partial shot area PHI is aligned with the exposure area EA of the projection optical system 3, and the partial pattern 16 1 The relative position of the partial shot area PHI is adjusted.
- the partial pattern 161 formed on the reticle R1 and the partial shot area PHI set on the substrate 4 are arranged on the optical axis AX of the projection optical system 3. Further, using the focus sensor AF, position information at a plurality of points in the partial shot area PH1 in the Z direction is detected, and the main control system 9 detects the detected position information and the partial pattern read from the exposure data file. Based on the deflection information of 161, the amount of displacement and the amount of tilt in the Z direction between the imaging plane of the projection optical system 3 and the surface (approximate surface) of the partial shot area PHI are calculated.
- the sample stage 5 is driven via the above-described image adjustment device, and The image plane of the projection optical system 3 and the surface of the partial shot area PHI are made substantially coincident with each other over the entire area EA. As a result, it is possible to prevent the occurrence of an imaging error (focus error) caused by the deflection of the reticle Ri due to its own weight.
- an imaging error focus error
- the partial pattern 16 1 is reduced.
- the image is transferred to the partial shot area PH1.
- the exposure of the two shot sides (sides L 10 and L 11) of the partial shot area PH 1 gradually decreases toward the outside. Exposure is performed with a light amount distribution of
- the main control system 9 moves the reticle stage 2 to The partial pattern 162 is arranged at the position where the exposure light IL is irradiated, and the alignment is performed using the alignment mark formed corresponding to the partial pattern 162.
- the alignment of the density filter F 2 is also performed by the blind 111, and the part that blocks the light-attenuating unit 123 of the density filter F is changed by the blind 111.
- the main control system 9 moves the substrate stage 6 step by step so that the partial shot area in the shot area SHI where the next partial pattern is transferred is exposed to the exposure area of the projection optical system 3 (projection area). Area).
- FIG. 7 is a diagram showing a state in which the second partial pattern is transferred to one shot area.
- FIG. 7 also schematically shows the relative positional relationship between the reticle Rl, the projection optical system 3, and the substrate 4, and the upper surface of the substrate 4.
- the second partial pattern 162 is transferred by the step movement of the substrate stage 6.
- the partial shot area PH2 is set to include a part of the already exposed partial shot area PHI Is done. This is to prevent inconsistency at the joint between the partial shot area PH1 and the partial shot area PH2.
- the sample stage 5 is driven using the position information of the partial shot area PH 2 obtained from the focus sensor AF and the deflection information of the partial pattern 16 2 read from the exposure data file, and the projection optical system 3 And the surface of the partial shot area PH2 are substantially matched.
- the position of the substrate 4 is set as described above, and the partial pattern 16 2 formed on the reticle R 1 and the partial shot area PH 2 set on the substrate 4 are arranged on the optical axis AX of the projection optical system 3.
- the exposure light IL irradiates the partial pattern 162 through the reduction optical system consisting of the condenser lens system 113 and the imaging lens system 114 in the state of being placed, the reduced image of the partial pattern 162 is partially shot. Transcribed into region PH2.
- the end portions of the three sides (sides L 20, L 21, L 22) of the partial shot area PH 2 are such that the exposure amount increases toward the outside. It is exposed with a gradually decreasing light intensity distribution.
- a step of transferring the third partial pattern is performed.
- the exposure of the shot area SH1 ends when the third partial pattern is transferred.
- the shot area SH2 is Are placed adjacent to each other, and it is assumed that overlapping exposure is performed not only when transferring a partial pattern but also between shot areas. No change is made in the location where 3 is shaded.
- the main control system 9 moves the reticle stage 2 to irradiate the exposure light IL.
- the partial pattern 163 is arranged at the position to be adjusted, and the alignment is performed using the alignment mark formed corresponding to the partial pattern 163.
- the main control system 9 moves the substrate stage 6 step by step to project a partial shot area in the shot area SH1 where the next partial pattern is to be transferred to the exposure area (projection area) of the projection optical system 3. ).
- FIG. 8 is a diagram showing a state in which a third partial pattern is transferred to one shot area.
- FIG. 8 also schematically shows the relative positional relationship between the reticle Rl, the projection optical system 3, and the substrate 4, and the upper surface of the substrate 4.
- the partial shot area PH 3 where the third partial pattern 16 2 is transferred by the step movement of the substrate stage 6 PH 3 Force already exposed portion The shot area PH2 is set to include a part of the shot area PH2.
- the position information of the partial shot area PH3 obtained from the focus sensor AF and the exposure data file The sample table 5 is driven by using the deflection information of the partial pattern 163 read from the filter, and the imaging plane of the projection optical system 3 and the surface of the partial shot area PH3 are substantially matched.
- the exposure light IL When the exposure light IL is applied to the partial pattern 163 in a state where the partial shot area PH 3 set on the substrate 4 and the partial shot area PH 3 are arranged on the optical axis AX of the projection optical system 3, a reduced image of the partial pattern 163 is partially formed. Transferred to shot area PH3. Although not shown in FIG. 8, when the partial pattern 163 is transferred, the ends of the three sides (sides L30, L31, and L32) of the partial shot area PH3 go outward. Exposure is performed with a light amount distribution in which the exposure amount gradually decreases. 6 to 8, the shot regions SH1 to SH4 are exaggerated on the substrate 4 for easy understanding.
- the reduced images 162 and 163 are transferred to the corresponding partial shot areas.
- the projection exposure apparatus of the present embodiment is provided with an alignment mechanism for a reticle and a substrate.
- FIG. 9 shows an alignment mechanism of the reticle.
- a reference mark member 12 is fixed near the substrate 4 on the sample stage 5 and, for example, a cross is formed on the reference mark member 12 at predetermined intervals in the X direction.
- a pair of reference marks 13A and 13B of the mold are formed.
- the reference marks 13A and 13B are positioned such that the centers of the reference marks 13A and 13B on the reference mark member 12 substantially coincide with the optical axis AX of the projection optical system 3. You.
- two cross-shaped alignment marks 21A and 21B are formed so as to sandwich the pattern region 20 on the pattern surface (lower surface) of the reticle Ri in the X direction.
- the pattern area 20 is divided into a plurality of sections, and alignment marks 21 A and 2 IB are provided corresponding to each pattern area.
- the figure illustrates how the alignment is performed using the alignment marks 21A and 21B provided corresponding to the pattern area 20 in which the partial pattern 162 is formed.
- the distance between the reference marks 13A and 13B is set substantially equal to the distance between the reduced images of the alignment marks 21A and 21B by the projection optical system 3, and the center of the reference marks 13A and 13B is set as described above.
- the alignment sensors 14A and 14B are substantially aligned with the optical axis AX, the alignment sensors 14A and 14B pass through the mirrors 22A and 22B, respectively, so that the illumination light having substantially the same wavelength as the exposure light IL (in this example, the illumination optical system 1
- the alignment marks 21A and 21B and the reference marks 13A and 13B of the reticle Ri are illuminated with the exposure light IL branched (or the optical path changed) on the way.
- the alignment sensors 14A and 14B are of the TTR (through-the-retic ⁇ /) system, each of which has an illumination system, an imaging system, and a two-dimensional image sensor such as a CCD camera.
- the element is an image processing method that captures images of the alignment marks 21A and 21B and the corresponding reference marks 13A and 13B, and the imaging signals are sent to the alignment signal processing system 15 in Fig. 1. Supplied.
- the alignment signal processing system 15 performs image processing on the imaging signal and calculates the positional deviation amounts of the reference marks 13 A, 13 B and the alignment marks 21 A, 21 B in the X direction, the Y direction, and the rotation direction. Then, these displacement amounts are supplied to the main control system 9.
- the main control system 9 positions the reticle stage 2 so that these positional deviation amounts are zero or within a predetermined range. As a result, the alignment marks 21A and 21B and the partial pattern 162 formed in one of the pattern areas 20 of the reticle Ri are positioned with respect to the reference marks 13A and 13B.
- the center (exposure center) of the reduced image of the partial pattern 16 2 of the reticle Ri by the projection optical system 3 is substantially positioned at the center (almost the optical axis AX) of the reference marks 13 A and 13 B.
- the sides orthogonal to the contour of the partial pattern 162 are set in parallel with the X-axis and the Y-axis, respectively.
- the main control system 9 shown in FIG. 1 stores the coordinates (XF., YF o) of the sample stage 5 in the X and Y directions measured by the laser interferometer 8, thereby aligning the reticle Ri. Ends.
- the coordinates of the reticle Ri obtained from a laser interferometer are stored in association with the partial pattern 162. Thereafter, any point on the sample stage 5 can be moved to the exposure center of the parent pattern Pi.
- the partial patterns 16 1 and 16 3 are similarly aligned using the alignment marks 21 A and 21 B formed correspondingly.
- the reticle alignment is performed for each partial pattern. However, for example, the reticle alignment is performed using the alignment mark corresponding to only one partial pattern, and the reticle alignment is performed for the remaining partial patterns. It is only necessary to move reticle stage 2 according to the distance (design value or actual measurement value obtained by detecting alignment marks 21A and 21B) between two partial patterns.
- reticle alignment is performed for each partial pattern, and the relative positional relationships of all alignment marks on the reticle Ri are obtained and stored.
- the reticle stage 2 may be moved using the result (mark coordinates) and the previously stored relative positional relationship. In this case, the reticle alignment time can be reduced.
- the reticle stage 2 is driven at the time of alignment of the reticle Ri.
- the above-described positional deviation and the reticle stage 2 and the substrate stage 6 sample stage It is only necessary to store the coordinates of 5).
- an off-axis system and an image processing system are provided on the side of the projection optical system 3 in order to detect the position of the mark on the substrate 4.
- Sensor 23 is provided.
- the alignment sensor 23 illuminates the test mark with a non-photosensitive broadband illumination light to the photoresist, captures an image of the test mark with a two-dimensional image sensor such as a CCD camera, and converts the image signal.
- Alignment signal processing system 1
- the distance (baseline amount) between the detection center of the alignment sensor 23 and the center of the projected image of the reticle R i (center of exposure) is determined by a predetermined reference mark on the reference mark member 12. And is stored in the main control system 9 in advance.
- the reticle is based on the coordinates of the reticle Ri for each partial pattern stored at the time of the reticle alignment described above.
- the stage 2 is driven to position the partial pattern 16 1 of the reticle R 1.
- the center of the partial pattern 16 1 substantially coincides with the optical axis AX of the projection optical system 3, and its two orthogonal sides are set to be parallel to the X axis and the Y axis, respectively. 1 is precisely aligned with the illuminated area on reticle R 1 defined by density filter F and plumb 1 1 1.
- a partial pattern 16 of the reticle R 1 in an enlarged shot area in which a plurality of (four in this example) shot areas SH 1 to SH 4 where screen splicing is performed on the substrate 4 is regarded as one.
- the blind 1 11 1 is driven in accordance with the position of the partial pattern area PH 1 where 1 is transferred, and a part of the darkening section 123 of the density filter F is shielded.
- the main control system 9 drives the substrate stage 6 based on the arrangement information (shot map data) of a plurality of shot areas set on the substrate 4 read from the exposure data file to position the substrate 4. After that, the partial pattern 16 1 is transferred onto the substrate 4.
- the partial patterns 16 2 and 16 3 of the reticle R 1 are transferred onto the substrate 4 while the reticle stage 2 and the substrate stage 6 are respectively stepped.
- three partial patterns 161 to 163 are formed in the first shot area SH1 on the substrate 4 by joining the screens, and the stitching exposure of this shot area SH1 is completed.
- the blind 1111 is driven to change the light-shielding area of the darkening section 123 of the density filter F.
- the blind 111 is not driven.
- the reticle is replaced and another reticle is placed on the reticle stage 2.
- the operation is exactly the same as that of the shot area SHI, and another reticle is placed in the enlarged shot area.
- a shot area may be subjected to stitching exposure, or a shot area in another enlarged shot area on the substrate 4 may be subjected to stitching exposure using the reticle R1 as it is without performing reticle exchange.
- the transfer may be started from the partial pattern 16 1 of the reticle R 1, but since the partial pattern 16 3 is positioned in the illumination area at the end of the exposure of the shot area SH 1, the shot area The transfer may be started from partial pattern 16 3 in the reverse order of SH 1.
- the time required to drive the reticle stage 2 to complete the positioning of the partial pattern 16 1 in the illumination area is determined by driving the substrate stage 6 and positioning the next shot area (partial shot area) in the exposure area.
- the transfer may be started from the partial pattern 16 1 as long as it is equal to or less than the time until the completion.
- two cross-shaped alignment marks 24A and 24B shown in FIG. When they are formed, based on the coordinates of each mark obtained by detecting the alignment marks 24 A and 24 B using the alignment sensor 23, and the above-described baseline amount and shot map data.
- the position of the substrate 4 may be determined by driving the substrate stage 6.
- any one of the partial shot area, the shot area, and the enlarged shot area is used as a basic shot.
- an alignment sensor 23 to detect the alignment marks attached to at least three basic shots on the substrate 4 and calculating the coordinates obtained, statistical calculations are performed on all Calculate the coordinates of the basic shot.
- each partial pattern is transferred onto the substrate 4 for each reticle Ri.
- the movement of the reticle stage 2 is controlled in the same manner as in the above-described pattern transfer to the first layer.
- stitching exposure can be performed for each shot region while each partial pattern of each reticle Ri is accurately overlapped with the corresponding pattern on the substrate 4.
- the positioning of the reticle R i and the substrate 4 has been described above, but the relative positioning of the reticle R i and the density filter F is also indicated by marks 1 24 A, 124 B, 124 C, 124 D ⁇ This is performed based on the result of measuring the position information of the slit marks 1 2 5. Also, due to the characteristics of the substrate stage 6, a slight rotation may occur on the substrate 4 due to an error such as a bowing error, and therefore, a small deviation occurs in the relative attitude between the reticle Ri and the substrate 4.
- Such an error is measured in advance or measured during actual processing, and the reticle stage 2 or the substrate stage 6 is controlled so that the error is offset, so that the attitude of the reticle R i and the substrate 4 match. It is to be corrected. If the amount of displacement (including the amount of rotation) from the predetermined position of reticle stage 2 exceeds an allowable value due to the alignment between each partial pattern of reticle Ri and the partial shot area on substrate 4, reticle stage While keeping the displacement of 2 below the allowable value, finely move the substrate stages 6 and Z or the sample stage 5 in addition to the reticle stage 2, or finely move the density filter F according to the displacement of the reticle stage 2. May be.
- sample stage 5 may be slightly rotated.
- the parent pattern of the N reticles R1-111 ⁇ in Figure 1 The reduced images of 1 to PN (partial pattern) are successively exposed and transferred to the corresponding shot area (partial shot area) on the substrate 4 while overlapping and joining, so that the reduced image of each parent pattern P 1 to PN is obtained.
- exposure transfer was performed while the screen was connected to the reduced image of the adjacent parent pattern.
- the photoresist on the substrate 4 is developed, etched, and the remaining resist pattern is peeled off, so that the projected image on the substrate 4 becomes the circuit pattern 35 shown in FIG. Then, the formation of a certain layer of the semiconductor integrated circuit is completed.
- a semiconductor integrated circuit as a micro device is finally manufactured.
- the respective partial patterns 161, 162, 163 are corresponded by using the reticle R i on which the plurality of partial patterns 161, 162, 163 are formed. The case where the transfer is performed to the partial shot area to be performed has been described.
- the present invention is not limited to the use of a reticle Ri having a plurality of partial patterns formed thereon, but a reticle having an undivided pattern, that is, a reticle generally used conventionally.
- the present invention can also be applied to a case where a suitable reticle is used.
- this reticle is used, the size of the density filter F and the reticle blind mechanism 110 are increased in order to secure an illumination area where the entire pattern can be illuminated, and the reticle blind mechanism 110 is incident on the reticle blind mechanism 110.
- the cross-sectional shape of the exposure light IL also needs to be enlarged.
- the reduction magnification of the optical system composed of the condenser lens system 113 and the imaging lens system 114 is Mx times in the X direction and My times in the Y direction
- the cross-sectional shape in the X direction of the exposure light IL immediately after passing through the density filter F needs to be multiplied by three times M x, and the cross-sectional shape in the Y direction must be multiplied by three times Myz].
- the exposure area of the projection optical system 3 is set to a size capable of projecting the partial pattern formed on the reticle Ri onto the substrate 4, but an undivided pattern is formed.
- the entire pattern formed on the reticle is collectively transferred to one shot area on the substrate 4.
- the peripheries of the shot areas are arranged so as to overlap with the peripheries of other shot areas, and stitching exposure is performed with the peripheries between shots overlapping.
- the projection exposure apparatus in the above-described embodiment is of a batch exposure type in which batch exposure is sequentially repeated for each partial shot area (or each shot area), but scanning is performed for each partial shot area (or each shot area).
- the present invention can also be applied to a scanning exposure type in which exposure is sequentially repeated.
- the density filter F is configured to be movable in the XY plane, and has an elongated rectangular slit (opening).
- An unillustrated fixed slit plate (fixed blind) is arranged on the optical path between the density filter F and the reflection mirror 112 to set the illumination area of the illumination optical system 1 in a slit shape.
- the illumination area of the illumination optical system 1 is set in a state where it can illuminate a part of the partial pattern formed on the reticle Ri or a part of the pattern formed on the reticle.
- the size of the illuminated area is set smaller than the partial pattern or pattern in the scanning direction in which the reticle is moved during the scanning exposure, and the partial pattern or pattern is set in the direction orthogonal to the scanning direction (non-scanning direction). It is set to the same level or more.
- the exposure area of the projection optical system 3 is set to have a size capable of projecting a part of the partial pattern in the illumination area or a part of the pattern formed on the reticle onto the substrate 4. That is, the projection optical system 3 is set so that the size of the projection field (image field) includes the illumination area on the object plane side and the exposure area on the image plane side.
- the exposure light IL shaped like a slit forms part of the partial pattern formed on the reticle Ri or part of the pattern formed on the reticle.
- the reticle and the substrate 4 are synchronously moved with respect to the exposure light IL, that is, the wafer is relatively moved with respect to the exposure area in synchronization with the relative movement of the reticle with respect to the illumination area.
- the partial pattern is sequentially transferred to the partial shot area, or the pattern is transferred to the shot area.
- the density filter F is relatively moved with respect to the exposure light IL in synchronization with the movement of the reticle and the substrate 4, and for example, when the exposure light IL irradiates the periphery of the shot area, the density filter F is reduced.
- the light unit 123 controls the exposure light IL to be reduced.
- the reticle Ri and the substrate 4 may be moved in the arrangement direction of the partial pattern or partial shot area (the Y direction which is the short direction), respectively.
- the reticle R i and the substrate 4 may be moved in a direction perpendicular to the arrangement direction (X direction which is the longitudinal direction of the partial pattern or partial shot area).
- the reticle R i and the substrate 4 are stepped in the X direction during the scanning exposure of each partial shot area.
- the field of view of the projection optical system 3 image Field
- the manufacturing cost of the projection optical system 3 can be greatly reduced.
- the present invention can be applied to both the batch exposure type projection exposure apparatus and the traveling exposure type projection exposure apparatus, but when high overlay accuracy is required, the batch exposure type
- a projection exposure apparatus of a mold type is used and priority is given to an improvement in throughput, that is, a processing amount of a substrate per unit time, over an overlay accuracy, it is preferable to employ a projection exposure apparatus of a scanning exposure type.
- the density filter F is used in order to make the exposure amount in the periphery of the shot region or the partial shot region set on the substrate 4 into an inclined exposure amount distribution.
- the present invention can be applied to a case where a density filter is used to make the illuminance distribution of the exposure light IL applied to the reticle R into a desired distribution (for example, a uniform illuminance distribution). It is possible. After all, the present invention can be applied to all configurations in which the density filter is arranged on the optical path on the incident side of the exposure light IL of the reticle.
- the reticle when the reticle R i is arranged on the reticle stage 2, the reticle may have a radius. If the reticle R i bends, the pattern formation surface of the reticle R i does not match the image plane of the projection optical system 3, and the amount of pattern deviation from this image plane is the focus error on the image plane side of the projection optical system 3. Will appear as In the above exposure apparatus, in order to correct the focus error on the image plane side of the projection optical system 3 caused by the deflection of the reticle Ri, the Z direction of the substrate 4 according to the radius of the reticle R i And the posture (tilt of the substrate 4 surface with respect to the optical axis AX) may be corrected.
- the reticle Ri bends along the Y direction.
- the radius of the partial pattern 16 2 formed in the center of the reticle R i is small.
- the partial pattern 16 1, 16 3 formed near the periphery of the reticle R i Is arranged in a state inclined with respect to the image plane of the projection optical system 3. Therefore, when transferring the partial pattern 162, adjust the position of the substrate 4 in the Z direction, and when transferring the partial patterns 161, 163, adjust the position of the substrate 4 in the Z direction.
- the posture of the substrate 4 it is preferable to control the posture of the substrate 4 to correct a defocus error caused by the deflection of the reticle Ri.
- the reticle Ri may be corrected by controlling the position and orientation of the reticle Ri in the Z direction.
- the correction amount is 16 times that in the case where the correction is performed by controlling the position and orientation of the substrate 4 in the Z direction.
- the optical characteristics of the projection optical system 3 (imaging) By adjusting the characteristic, at least a part of the image plane may be moved within the exposure area of the projection optical system 3 to correct the focus error. Therefore, in the above embodiment, at least one of the movement of the substrate 4, the movement of the reticle Ri, and the adjustment of the optical characteristics of the projection optical system 3 may be performed in order to correct the focus error.
- the radius amounts of the reticles R 1 to RN on the reticle stage 2 measured in advance are stored in an exposure data file in the storage device 11.
- the amount of radius corresponding to the reticle R i placed on the reticle stage 2 may be read and the amount of deflection may be corrected, or the amount of deflection of the reticle Ri held on the reticle stage 2 may be adjusted.
- a measuring device for example, an optical sensor having the same configuration as the above-mentioned focus sensor AF) for actually measuring the amount may be provided, and the focus error caused by the deflection of the reticle Ri may be corrected according to the measurement result. Good.
- the error of the focus control may be further reduced.
- the accuracy of the autofocus mechanism including the focus sensor AF, the actuator that drives the sample stage 5, etc.
- the exposure By lowering the illuminance of the light IL and extending the exposure time, it is possible to transfer a partial pattern while realizing high-precision autofocus.
- the main control system 9 stores the projection optical system stored in the storage device 11. Information about the optical characteristics of the system 3 or the flatness of the substrate 4 may be read, and a correction value for correcting the information may be added to the above-described focus error correction value and corrected.
- the parent pattern of the reticle Ri is often composed of a plurality of patterns, the parent pattern is divided in units of the pattern to form partial patterns, so that each of the shot areas on the substrate 4 can be formed. The seam of the partial shot area may be eliminated. Therefore, each partial pattern on the reticle Ri or the formation area thereof may not be rectangular, and for example, a part thereof may have unevenness.
- a plurality of circuit patterns having the same configuration may be formed.
- a plurality of circuit patterns may be divided into circuit patterns to form the above-described partial patterns.
- the number of circuit patterns included in each partial pattern may not be one or the same, but may be plural or different.
- the width of each partial pattern or the formation area thereof in the arrangement direction of a plurality of partial patterns is assumed to be equal.
- a plurality of partial patterns may be formed with different widths depending on the pattern configuration.
- the reticle R i when the reticle R i is mounted on the reticle stage 2, the reticle R in the direction in which the radius of the reticle R i is large (the Y direction in this example) among the X and Y directions.
- the pattern to be formed on R i may be divided into a plurality of partial patterns, and the shape and size (width) of each partial pattern or its formation region may be arbitrary.
- FIG. 3 of the two pairs of opposing sides of the reticle R i, along the pair of sides 150, 151, extending in the Y direction, A support surface (support position) 200, 202, 202 having a shape extending in the Y direction is set, and the example in which the amount of deflection of the reticle Ri in the Y direction is large. Therefore, as shown in FIG. 3, the pattern (parent pattern) is divided into partial patterns 16 0, 16 1, 16 2 extending in the X direction, and those arranged in the Y direction are referred to as reticle R 1. ⁇ RN had formed.
- each partial pattern of the reticle R i is a divided pattern obtained by dividing one pattern into a plurality of patterns, but a plurality of different patterns are formed on the same reticle R i. May be.
- the reduced images of the partial patterns 16 1, 16 2, 16 3 formed on the reticle Ri are transferred to the corresponding partial shot areas PHI, PH 2, PH 3 respectively.
- the reticle R i is moved in the Y direction to switch the partial pattern arranged in the illumination area of the reticle R i, but by moving the illumination area without moving the reticle R i, the illumination is performed.
- the partial pattern arranged in the area may be switched.
- each of the four blinds 1 1 1 of the reticle blind mechanism 1 10 is controlled, and the density filter F is moved according to the position of the partial pattern 16 1, 16 2, 16 3 I'll do it.
- the intensity distribution of the exposure light IL is detected by using the illuminance distribution detection sensor 126 having the minute aperture 54.
- a line sensor, a one-dimensional or two-dimensional CCD, or the like is used.
- the exposure light IL may be used to detect the exposure light IL to shorten the measurement time of the intensity distribution.
- a rod integrator internal reflection type integrator
- the density filter is located close to the exit surface of the rod integrator which is arranged almost conjugate with the reticle pattern formation surface. May be arranged.
- the reticle blind mechanism 110 may be provided other than the illumination optical system.
- reticle blind mechanism 110 has four blinds 111, for example, two L-shaped light-shielding plates may be used, and the configuration may be arbitrary.
- the shapes of the shot area and the partial shot area are rectangular.
- the shapes are not necessarily rectangular, and may be, for example, a pentagon, a hexagon, or another polygon. it can.
- each shot area and partial shot area do not need to have the same shape, and can have different shapes and sizes.
- the shape of the portion where the screen joining is performed need not be rectangular, but may be a zigzag band, a meandering band, or another shape.
- screen splicing is meant to include not only connecting patterns but also arranging the patterns in a desired positional relationship. Further, the transfer of the pattern or the partial pattern may not be performed on the overlapping portion (the peripheral portion subjected to multiple exposure) between the plurality of shot regions or the partial shot regions.
- the pattern may be divided into a dense pattern and an isolated pattern and formed on a reticle to eliminate or reduce the connection between the patterns on the substrate 4.
- the pattern is formed on the substrate 4 (wafer or the like).
- the pattern of one reticle may be transferred to each of a plurality of regions on the substrate 4, so that the number of reticles used for device manufacturing can be reduced.
- the enlarged pattern (the parent pattern 36 described above) is divided in functional block units. For example, at least one unit is used for each of the CPU, DRAM, SRAM, A, D converter, and D / A converter.
- One functional block may be formed on each of a plurality of reticles.
- the stitching type exposure (overlapping exposure) is performed using a plurality of reticles, but a single reticle on which a plurality of partial patterns are formed may be used.
- the patterns or partial patterns to be transferred to a plurality of shot areas or partial shot areas whose peripheral portions partially overlap on the substrate need not all be different, for example, at least two shot areas or partial areas.
- the pattern or partial pattern transferred to the shot area may be the same.
- a fine pattern having a uniform line width can be formed over the entire surface of a plurality of shot regions or partial shot regions whose peripheral portions partially overlap on the substrate, and the line widths are different.
- the reticle stage 2 mounts one reticle.
- a reticle stage on which a plurality of reticle can be mounted may be used. It can be shortened. At this time, by mounting each reticle on the reticle stage via the fine movement mechanism, it is possible to perform highly accurate alignment for each reticle.
- the filter stage FS for driving the density filter F and the interferometer for measuring the position are provided, but these are not necessarily provided. You may.
- the focus level adjustment is performed in consideration of the radius of the reticle Ri due to its own weight.
- a plurality of patterns may be formed along a direction in which the amount of deflection is large (Y direction).
- the amount of radius for each pattern is small, so focus and leveling adjustments taking into account the amount of radius need not be performed, and some patterns (for example, both end patterns) Only the focus and leveling adjustments taking into account the amount of deflection may be performed.
- the ArF excimer laser light (wavelength: 193 nm) is used as the illumination light for exposure, but the g-line (wavelength: 436 nm), the i-line (wavelength: 365 nm), and the FrF excimer laser light (wavelength 248 nm), F 2 laser beam (wavelength 157 nm), or a r 2 laser beam (wavelength 126 ⁇ ⁇ ) or the like can be used.
- the F 2 laser exposure apparatus whose light source is, for example, with the catadioptric optical system is employed as a projection optical system
- the refractive optical element (lens elementary g) which is used in the illumination optical system or the projection optical system is all fluorite
- the air in the laser light source, the illumination optical system, and the projection optical system is replaced with, for example, helium gas, and the air between the illumination optical system and the projection optical system, and between the projection optical system and the substrate, etc. Filled with helium gas.
- the reticle and the concentration filter, fluorite, fluorine-doped synthetic silica, magnesium fluoride, L i F, L a F 3, lithium force Honoré Shiumu aluminum Furorai de ( Leicauff crystals) or those manufactured from quartz, etc. are used.
- a harmonic of a solid-state laser such as a YAG laser having an oscillation spectrum at any of 248 nm, 193 nm, and 157 nm may be used.
- a single-wavelength laser in the infrared or visible region oscillated from a DFB semiconductor laser or a fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and yttrium) to form a nonlinear optical crystal. It is also possible to use harmonics whose wavelength has been converted to ultraviolet light.
- the oscillation wavelength of a single-wavelength laser is in the range of 1.51 to 1.59 in
- the 8th harmonic whose generated wavelength is in the range of 189 to 199 nm, or the generated wavelength is 151 to 159 nm
- the 10th harmonic within the range is output.
- the 8th harmonic that is, ultraviolet light having almost the same wavelength as that of the ArF excimer laser is obtained. If the oscillation wavelength is within the range of 1.57 to 1.58 ⁇ m, 157-158 nm The 10th harmonic within this range, that is, ultraviolet light having substantially the same wavelength as the F 2 laser can be obtained. If the oscillation wavelength is in the range of 1.03 to 1.12 ⁇ , the generated wavelength is 14 7 to 1
- a 7th harmonic within the range of 60 nm is output.
- a single-wavelength oscillation laser is an yttrium-doped fiber laser.
- a laser plasma light source or a soft X-ray region generated from SOR, for example, EUV (Etreme Ultra Violet) light having a wavelength of 13.4 nm or 11.5 nm may be used.
- EUV Etreme Ultra Violet
- a charged particle beam such as an electron beam or an ion beam may be used.
- the projection optical system may use not only a reduction system but also an equal magnification system or an enlargement system (for example, an exposure apparatus for manufacturing a liquid crystal display or a plasma display). Further, the projection optical system may use any one of a catoptric optical system, a refractive optical system, and a catadioptric optical system.
- the present invention may also be applied to other applications.
- the immersion type exposure apparatus may be a scanning exposure type using a catadioptric projection optical system, or a static exposure type using a projection optical system with a projection magnification of 1/8.
- a scanning exposure type using a catadioptric projection optical system or a static exposure type using a projection optical system with a projection magnification of 1/8.
- the present invention may be applied to an exposure apparatus having two independently movable wafer stages.
- This twin wafer stage type exposure apparatus is disclosed in, for example,
- the exposure apparatus used in the manufacture of semiconductor elements, but also the manufacture of displays including liquid crystal display elements and the like, the exposure apparatus that transfers device patterns onto a glass plate, and the manufacture of thin-film magnetic heads
- the present invention can also be applied to an exposure apparatus that is used for manufacturing an exposure apparatus that transfers a device pattern onto a ceramic wafer, an imaging device (such as a CCD), a micromachine, and a DNA chip.
- the substrate to be exposed (deposited substrate) to which the device pattern is transferred is held on the substrate stage 6 by vacuum suction or electrostatic suction.
- a reflection type mask is used in an exposure apparatus using EUV light
- a transmission type mask (a stencil mask, a membrane mask) is used in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus.
- a silicon wafer is used.
- the illumination optical system and projection optical system composed of multiple lenses are incorporated into the exposure apparatus main body to perform optical adjustment, and a reticle stage and substrate stage consisting of many mechanical parts are attached to the exposure apparatus main body to perform wiring and piping.
- the exposure apparatus according to the present embodiment can be manufactured by connecting them and performing overall adjustment (electrical adjustment, operation check, etc.). It is desirable that the exposure apparatus be manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
- the semiconductor integrated circuit includes a step of designing device functions and performance, a step of manufacturing a reticle based on this design step, a step of manufacturing a wafer from a silicon material, It is manufactured through the steps of exposing and transferring a pattern to a wafer, device assembly steps (including dicing, bonding, and packaging processes), and inspection steps.
- a step of designing device functions and performance a step of manufacturing a reticle based on this design step
- a step of manufacturing a wafer from a silicon material It is manufactured through the steps of exposing and transferring a pattern to a wafer, device assembly steps (including dicing, bonding, and packaging processes), and inspection steps.
- the influence of the foreign matter can be reduced, and as a result, the energy on the sensitive object can be reduced. Since the distribution can be made uniform, there is an effect that a fine pattern having a uniform line width can be faithfully formed.
- the present invention it is easy to design a projection optical system with a high NA in which the residual aberration is reduced as much as possible, and it is also easy to make adjustments at the time of manufacturing, thereby increasing costs in manufacturing the projection optical system. This also has the effect of suppressing the cost of the exposure apparatus.
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Abstract
Description
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KR1020107021093A KR101096478B1 (ko) | 2003-01-23 | 2004-01-23 | 노광 장치 |
JP2005508121A JPWO2004066371A1 (ja) | 2003-01-23 | 2004-01-23 | 露光装置 |
KR1020117024284A KR101205262B1 (ko) | 2003-01-23 | 2004-01-23 | 노광 장치 |
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Cited By (6)
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JP2008058476A (ja) * | 2006-08-30 | 2008-03-13 | Nikon Corp | 露光装置、デバイスの製造方法及び露光方法 |
JP2012129556A (ja) * | 2003-08-21 | 2012-07-05 | Nikon Corp | 露光方法、及びデバイス製造方法 |
JP2016075955A (ja) * | 2004-11-18 | 2016-05-12 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
CN110476121A (zh) * | 2017-03-31 | 2019-11-19 | 株式会社尼康 | 图案计算装置、图案计算方法、掩模、曝光装置、元件制造方法、计算机程序和记录媒体 |
TWI736613B (zh) * | 2016-04-28 | 2021-08-21 | 美商應用材料股份有限公司 | 標線片處理系統及標線片載具 |
WO2023282210A1 (ja) * | 2021-07-05 | 2023-01-12 | 株式会社ニコン | 露光装置、露光方法およびフラットパネルディスプレイの製造方法、ならびに露光データ作成方法 |
Families Citing this family (1)
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US7738692B2 (en) * | 2006-07-20 | 2010-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of determining quality of a light source |
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- 2004-01-23 KR KR1020057013382A patent/KR101019389B1/ko active IP Right Grant
- 2004-01-23 KR KR1020117024284A patent/KR101205262B1/ko active IP Right Grant
- 2004-01-23 KR KR1020107021093A patent/KR101096478B1/ko active IP Right Grant
- 2004-01-23 JP JP2005508121A patent/JPWO2004066371A1/ja active Pending
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TWI736613B (zh) * | 2016-04-28 | 2021-08-21 | 美商應用材料股份有限公司 | 標線片處理系統及標線片載具 |
CN110476121A (zh) * | 2017-03-31 | 2019-11-19 | 株式会社尼康 | 图案计算装置、图案计算方法、掩模、曝光装置、元件制造方法、计算机程序和记录媒体 |
WO2023282210A1 (ja) * | 2021-07-05 | 2023-01-12 | 株式会社ニコン | 露光装置、露光方法およびフラットパネルディスプレイの製造方法、ならびに露光データ作成方法 |
Also Published As
Publication number | Publication date |
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KR101096478B1 (ko) | 2011-12-20 |
KR20110131288A (ko) | 2011-12-06 |
KR20050092434A (ko) | 2005-09-21 |
KR101205262B1 (ko) | 2012-11-27 |
KR101019389B1 (ko) | 2011-03-07 |
KR20100120219A (ko) | 2010-11-12 |
JPWO2004066371A1 (ja) | 2006-05-18 |
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