WO2000059012A1 - Procede et dispositif d'exposition - Google Patents

Procede et dispositif d'exposition Download PDF

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Publication number
WO2000059012A1
WO2000059012A1 PCT/JP2000/001540 JP0001540W WO0059012A1 WO 2000059012 A1 WO2000059012 A1 WO 2000059012A1 JP 0001540 W JP0001540 W JP 0001540W WO 0059012 A1 WO0059012 A1 WO 0059012A1
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WO
WIPO (PCT)
Prior art keywords
pattern
exposure
mask
characteristic
substrate
Prior art date
Application number
PCT/JP2000/001540
Other languages
English (en)
Japanese (ja)
Inventor
Makoto Kondo
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020017010813A priority Critical patent/KR20010112286A/ko
Priority to AU29445/00A priority patent/AU2944500A/en
Publication of WO2000059012A1 publication Critical patent/WO2000059012A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus

Definitions

  • the present invention relates to an exposure method and an exposure apparatus used in a lithographic process for manufacturing a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head.
  • a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head.
  • This method is suitable for use when exposing a large pattern by transferring (connecting exposure) while performing the patterning.
  • Conventional semiconductor integrated circuits are generally manufactured by repeating a process of transferring a pattern of one reticle as a mask to each shot area on a wafer as a substrate.
  • the original pattern of one circuit pattern to be transferred is divided into a plurality of reticle patterns, and the reticle pattern
  • An exposure method is used in which a pattern is transferred to one shot area on a wafer while screen joining is performed, that is, continuous exposure is performed.
  • Bridge exposure is also called “angle of view synthesis”.
  • the pattern may be cut at the joint (boundary) of the image of the reticle pattern.
  • a method of performing exposure by overlapping a joint portion of an image of an adjacent pattern by a minute width has conventionally been developed. Has been issued.
  • the exposure light is applied to a region corresponding to the joint.
  • a projection exposure apparatus provided with a dimming unit that linearly reduces the amount of transmitted light outward.
  • the distribution of the exposure amount in the case of double exposure is a distribution symmetrically inclined with respect to each other.
  • the exposure amount coincides with the integrated exposure amount of the other parts.
  • the extinction characteristic of the superimposed part at that time is defined by a one-dimensional function.
  • the integrated exposure amount in a portion where the four patterns are adjacent is different from the integrated exposure amount in other portions ( Exposure method) Its primary purpose is to provide law.
  • Another object of the present invention is to provide a method of manufacturing a device or a mask using such an exposure method. Disclosure of the invention
  • the first exposure method according to the present invention is directed to an exposure method for exposing a pattern larger than each of the patterns onto the substrate by splicing and exposing a plurality of patterns on the substrate.
  • 0 A to 30 D) are exposed in the first direction (X direction) and the second direction (Y direction), which intersect each other, so that some areas are overlapped.
  • the corners of the four patterns are exposed while overlapping each other, and when exposing each of the four patterns, the exposure amount of the corners of the pattern is reduced. This is set based on a characteristic obtained by multiplying a first characteristic that gradually decreases outward along the first direction and a second characteristic that gradually decreases outward along the second direction.
  • the dimming characteristics of the exposure amount at the corners of the four patterns are set to two-dimensional characteristics, respectively. It becomes almost the same as the integrated exposure amount in the portion.
  • the two-dimensional characteristics are obtained by multiplying the one-dimensional characteristics that intersect each other, for example, a neutral density filter having such neutral density characteristics can be easily manufactured. .
  • a second exposure method is directed to an exposure method for exposing a pattern larger than each pattern onto the substrate by exposing a plurality of patterns onto the substrate.
  • a plurality of patterns (32A to 32D) are spliced and exposed in a first direction (X direction) and a second direction (Y direction) crossing each other so that a part of each region overlaps.
  • the first pair of patterns (32A, 32D) are obliquely opposed.
  • the corners of the rectangle are superimposed on each other and exposed, and for the second pair of patterns (32B, 32C), the corners (33, 34) of each triangle are replaced by the corners of the rectangle. Exposure is performed adjacent to the inside of the device.
  • the corners of the three adjacent patterns are formed in one triangular area (33) of the four adjacent patterns.
  • the corners of three adjacent patterns are overlapped and exposed. Since the exposure amount of each of the corners decreases outward with a predetermined characteristic, the integrated exposure amount becomes substantially equal to the other regions.
  • a first exposure apparatus of the present invention is an exposure apparatus for transferring a pattern of a mask (R) onto a substrate (W).
  • System (1-3, 6-8) and a field stop (4) arranged in the illumination optical system at a position substantially conjugate to the pattern surface of the mask to set an illumination area on the mask.
  • a substrate stage (25) for positioning the substrate, and a surface near the pattern surface of the mask, or a surface near a conjugate surface with respect to the pattern surface, intersecting the pattern surface.
  • the transmittance of at least one area corresponding to at least one corner of the pattern area having an outer shape substantially parallel to the first direction and the second direction to the illumination light for exposure to the outside along the first direction.
  • a dimming filter (55) set based on a characteristic obtained by multiplying a first characteristic that gradually decreases and a second characteristic that gradually decreases outward along the second direction.
  • the second exposure apparatus is provided with a dimming filter (56) having the following characteristics instead of the dimming filter of the first exposure apparatus.
  • the neutral density filter includes a pair of first and second diagonally opposed corners of a pattern area having an outer shape substantially parallel to the first and second directions intersecting with each other on the pattern surface.
  • the above-described second exposure method can be used.
  • the peripheral portion partially overlaps on the substrate.
  • the amount of illumination light applied to the pattern on the substrate is gradually reduced at least where the two regions overlap.
  • at least one mark pattern provided in the dimming filter is detected.
  • the amount of illumination light, which is applied to the pattern by the dimming filter, on the substrate is gradually reduced at a portion where the at least two regions overlap, and thus the light is reduced at that portion. Is approximately equal to the other parts.
  • a mark pattern provided in the darkening filter is detected, and at least one of the position information and the rotation information of the darkening filter is obtained. Thereby, based on the obtained information, the relative positioning accuracy between the dimming filter and the pattern can be improved, and the line width accuracy of the device after the bridge exposure can be improved. .
  • the third exposure apparatus is an exposure apparatus that transfers a pattern to at least two regions where peripheral portions partially overlap each other on a substrate, wherein the substrate receives illumination light applied to the pattern.
  • a dimming filter that gradually reduces the amount of light above at least where the two regions overlap, and a dimming filter that obtains at least one of positional information and rotation information of the dimming filter.
  • a detection device for detecting at least one mark pattern provided in the evening.
  • the third exposure method of the present invention can be used.
  • the detection device detects at least one of relative position information and relative rotation information between the darkening filter and a mask on which the pattern is formed.
  • the dimming filter is arranged so as to be deviated from the pattern plane of the mask on which the pattern is formed or the conjugate plane thereof.
  • the device manufacturing method according to the present invention includes a step of transferring a device pattern onto a photosensitive substrate using the exposure method of the present invention or using the exposure apparatus of the present invention.
  • a method of manufacturing a mask according to the present invention is a method of manufacturing a mask using the exposure method of the present invention, wherein a step of transferring a plurality of mask patterns onto a mask substrate using the exposure method while performing screen splicing. Including. At this time, by transferring a plurality of mask patterns in a reduced scale, masks can be mass-produced with higher precision and higher throughput than a method in which a mask pattern is drawn directly on the mask substrate by using an electron beam drawing apparatus or the like. . Further, the mask according to the present invention uses a device pattern transferred while performing screen joining by the exposure method or exposure apparatus of the present invention as a mask pattern.
  • a first method for manufacturing an exposure apparatus is a method for manufacturing an exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system for illuminating the mask; A field stop arranged at a position substantially conjugate to the pattern surface of the mask to set an illumination area on the mask, a substrate stage for positioning the substrate, Plane, or its conjugate plane or its pattern plane Illumination light for exposure of an area corresponding to at least one corner of a pattern area having an outer shape substantially parallel to the first direction and the second direction intersecting the pattern surface and arranged on a surface near the pattern surface Is set based on a characteristic obtained by multiplying the first characteristic, which gradually decreases outward along the first direction, with the second characteristic, which gradually decreases outward along the second direction.
  • This is to assemble a file with a file in a predetermined positional relationship.
  • a second method for manufacturing an exposure apparatus is a method for manufacturing an exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system for illuminating the mask; and the mask within the illumination optical system.
  • a field stop which is arranged at a position substantially conjugate to the pattern surface of the mask to set an illumination area on the mask, a substrate stage for positioning the substrate, a surface near the pattern surface of the mask, Or, it is disposed on a conjugate plane with respect to the pattern plane or a plane in the vicinity of the conjugate plane, and opposes each other at a pattern area having an outer shape substantially parallel to the first direction and the second direction crossing each other on the pattern plane.
  • the transmittance of the region corresponding to the first pair of corners to the illumination light for exposure gradually decreases outward along the first direction.
  • the first characteristic gradually decreasing outward along the first direction and the outer characteristic along the second direction.
  • a dimming filter set based on the characteristic obtained by adding the gradually decreasing second characteristic to the second characteristic.
  • the third method of manufacturing an exposure apparatus is a method of manufacturing an exposure apparatus for transferring a pattern to at least two regions where peripheral portions partially overlap each other on a substrate. That base of light A dimming filter that gradually reduces the amount of light on the plate at the portion where the at least two areas overlap, and a dimming filter to obtain at least one of the position information and rotation information of the dimming filter. A detection device for detecting at least one mark pattern provided in the optical filter is assembled in a predetermined positional relationship.
  • FIG. 1 is a schematic configuration diagram showing a projection exposure apparatus used in an example of an embodiment of the present invention.
  • FIG. 2 is an enlarged view showing a configuration example of the reticle blind 4 in FIG.
  • FIG. 3 is an enlarged perspective view showing the configuration of the movable stage of the positioning device 5 in FIG.
  • FIG. 4 is a diagram showing a transmittance distribution of the density filter 55 in FIG.
  • FIG. 5 is a view showing a projected image obtained by performing transfer while performing image splicing using the density filter 55 of FIG.
  • FIG. 6 is an explanatory diagram of a method of removing an incomplete portion by using a reticle blind.
  • FIG. 7 is a diagram showing a transmittance distribution of a density filter 56 according to another example of the embodiment of the present invention.
  • FIG. 8 is a diagram showing a projection image obtained by performing transfer while performing screen splicing using the density filter 56 of FIG.
  • FIG. 9 is a partially cut-away view showing a main part of an embodiment in which a dust-proof thin film is provided on the concentration filter 55.
  • FIG. 1 shows a schematic configuration of the projection exposure apparatus of this example.
  • the illumination light (exposure light) IL for exposure emitted from the light source 1 at the time of exposure passes through a shutter (not shown).
  • Input lens after being reflected by the mirror M1 Then, the light enters the illuminance uniforming optical system 2 including the optical integrator (fly-eye lens or rod lens) and the illuminance distribution is uniformed.
  • An aperture stop (not shown) that determines the numerical aperture of the illumination light and, consequently, the coherence factor ( ⁇ value) is provided on the Fourier transform surface with respect to the pattern surface of the reticle R to be transferred in the illumination uniforming optical system 2.
  • ⁇ value coherence factor
  • the illumination light IL that has passed through the illumination uniforming optical system 2 passes through a relay lens 3 and enters a reticle blind 4 as a variable field stop.
  • the reticle blind 4 has four movable L-shaped light-shielding plates 4 1, 4 2 at four edges 4 1 ⁇ , 4 1 ⁇ , 4 2 A, 4 2.
  • the illumination area (exposure angle of view) on the reticle R is determined by the variable aperture (hatched area) S surrounded by B.
  • the illuminating light IL that has passed through the reticle blind 4 passes through the density filter 55 and is provided with an illuminance distribution suitable for performing exposure (joint exposure) while connecting screens as described below.
  • the density filter 55 as the darkening filter has a transmittance distribution for making the integrated exposure amount of the joint portion at the time of the joint exposure equal to the integrated exposure amount of the other portions. (See below for details).
  • the illumination light passing through the density filter 55 passes through a relay lens 6, a mirror 7 for bending the optical path, and a condenser lens 8, and illuminates the pattern surface (lower surface) of the reticle R on which the original pattern for transfer is formed. I do.
  • the arrangement surface of the reticle blind 4 is close to the surface P1
  • the filter forming surface of the density filter 55 is the surface P1. It is set at a position slightly deviated from 1 to the reticle R side. Due to the action of the density filter 55, the illumination light IL has an illuminance distribution that gradually decreases around the pattern area of the reticle R, and the pattern in the illumination area of the reticle R passes through the projection optical system PL. With a projection magnification of 3 (3 is 1 Z 4, 1 Z 5 etc.) The photoresist is projected onto the wafer W to which the photoresist has been applied.
  • the illumination optical system consists of a light source 1, a mirror Ml, an illuminance uniforming optical system 2, a relay lens 3, a reticle blind 4, a density filter 55, a relay lens 6, a mirror 7, a condenser lens 8, etc. I have.
  • the i-line (wavelength 365 nm) of a mercury lamp is used as the illumination light IL.
  • KrF wavelength 248 ⁇ m is used as the illumination light IL.
  • the Z axis is taken parallel to the optical axis of the projection optical system PL
  • the X axis is taken parallel to the plane of Fig. 1 in a plane perpendicular to the Z axis
  • the Y axis is taken perpendicular to the plane of Fig. 1. .
  • the reticle R is held on the reticle stage 21, and the reticle stage 21 finely moves on the reticle base 22 in the X, Y, and rotation directions to position the reticle R.
  • the position of the reticle stage 22 is measured by a laser interferometer incorporated in the reticle stage drive system 23, and the measured values and the control from the main control system 24 that supervise and control the operation of the entire apparatus
  • the reticle stage drive system 23 controls the operation of the reticle stage 21 based on the information.
  • the wafer W is held on a wafer stage 25 via a wafer holder (not shown), and the wafer stage 25 steps on the wafer base 26 in the X and Y directions.
  • the position of the wafer stage 25 in the XY plane is measured by the laser interferometer 27, and based on the measured values and the control information from the main control system 24, the wafer stage drive system 28 Control the operation of 25.
  • the wafer stage 25 adjusts the surface of the wafer W to the image plane of the projection optical system PL by an auto-force force method.
  • the illuminance sensor 63 for photoelectrically converting the light is fixed, and the detection signal of the illuminance sensor 63, which also functions as a mark detection system, is supplied to the main control system 24.
  • a reticle loader (not shown) for exchanging reticles on reticle stage 21 and a reticle library containing a plurality of reticles used for screen splicing are installed near reticle stage 21.
  • the reticle R on the reticle stage 21 can be replaced with another reticle at high speed.
  • the next shot on the wafer W is performed by the step movement of the wafer stage 25.
  • the operation of moving the corresponding part of the area to the exposure area of the projection optical system PL and performing exposure is repeated in a step-and-repeat manner.
  • the reticle R is replaced with another reticle, and a reduced image of the pattern of the replaced reticle is exposed while screen shot is performed on each shot area on the wafer W, and thereafter, the reticle is replaced and connected. Exposure is repeated.
  • a large reticle is used as the reticle R, and a plurality of patterns sequentially selected by the reticle blind 4 from the pattern surface of this reticle are screen-connected while the screen is being screen-connected. May be transferred to each shot area.
  • the density filter 55 is arranged so as to be movable with six degrees of freedom on a base (not shown) (base 51 in FIG. 3) via the movable table 53 and the movable table 52.
  • the system 24 is configured to be able to control the position and the inclination angle of the density filter 55 via the drive system 29.
  • the movable table 52, 53, etc. constitutes a positioning device 5 for the density filter 55.
  • the shape of the opening of the reticle blind 4 can be set by the main control system 24 via a drive system (not shown).
  • the reduced images of the patterns of a plurality of reticles are exposed (joint exposure) while the screens are connected as described above.
  • a joint portion (connecting portion) of a predetermined width is overlapped and exposed, and in the area where the reduced images of the four patterns are adjacent, the four images are used.
  • the overlapping portions of the corners of each corner of the reduced image are overlapped and exposed. This prevents the circuit pattern finally formed at the joint from being cut.
  • a reduced image of each reticle pattern is exposed using the density filter 55.
  • the illuminance (and, consequently, the amount of exposure) at the periphery is reduced.
  • a joint portion thereof for example, the first portion in one shot area exposed by the illumination light IL at the time of transfer of the first pattern, and the second pattern
  • the circuit pattern for the device does not necessarily exist in the one shot area exposed to the illumination light IL during transfer, and the connection part exists even if the circuit pattern exists. It may not be.
  • the density fill 55 is effective for adjusting the integrated exposure amount to other areas.
  • the illuminance distribution on the reticle R pattern surface is set by the transmittance distribution on the filter surface of the density filter 55, so that the filter surface is theoretically conjugate with the reticle R pattern surface.
  • the filter surface of density filter Is located slightly away from the plane P1 toward the reticle side or the light source side (defocused position).
  • the fill surface of the concentration fill 55 may be placed on the surface P1.
  • a positioning device 5 including movable tables 52 and 53 is used.
  • FIG. 3 shows an example of the configuration of a positioning device 5 for the density filter 55.
  • a concentration filter 55 is provided so as to cover the opening 61 of the movable table 53
  • a movable table 53 is provided so as to cover the opening of the movable table 52.
  • the movable table 52 has three freedoms of translational movement in the X and Y directions with respect to the base 51 and rotation about the Z axis with respect to the base 51 by means of a three-axis drive motor 52A to 52C.
  • the movable table 53 is moved in the Z direction with respect to the movable table 52 by three drive motors 53D, and is moved around the X axis and the Y axis. Fine adjustment of three degrees of freedom with rotation around It is arranged to be able to.
  • the 6-axis drive motors 52A to 52C and 53D are provided with encoders for detecting the amount of movement or the rotation angle, respectively, and the detection results of these encoders are supplied to the drive system 29 in Fig. 1. ing.
  • the main control system 24 moves the illuminance sensor 63 to the exposure area of the projection optical system PL to start the irradiation of the illumination light IL for exposure, and then drives the wafer stage 25.
  • the illuminance sensor 63 crosses the exposure area, and the detection signal of the illuminance sensor 63 is taken in accordance with the coordinates of the wafer stage 25, so that the position and rotation angle of the density filter 55 can be monitored. I do.
  • alignment marks are provided so as to correspond to both the density filter 55 and the reticle R, and the positions of the images of the alignment marks are also detected, whereby the density filter 55 is formed.
  • the positional relationship (at least one of the positional relationship in the X direction, the positional relationship in the Y direction, and the relative rotation around the Z axis) between the projected image on the reticle R and the reticle R can be detected with high accuracy.
  • the main control system 24 controls the operation of the drive motors 52 A to 52 C and 53 D via the drive system 29 so that the detected positional relationship becomes a predetermined relationship. In this way, the position of the density filter 55 is determined.
  • the defocus amount at the corresponding position is obtained from the contrast of the images of the two alignment marks around the density filter 55, and the light of the density filter 55 is adjusted so that the defocus amount becomes equal.
  • the position in the direction along the axis may be controlled. This makes it possible to adjust the position (defocus amount) and the one-dimensional tilt amount (rotation angle) of the density filter 55 in the Z direction.
  • the illuminance sensor 63 may detect only the image of one alignment mark of the density fill 55 and adjust the defocus amount of the density fill 55, or the density fill 55 may be used.
  • the illuminance sensor 63 detects the images of the alignment marks provided in at least three locations of In addition to the defocus amount of the fill 5 55, a two-dimensional tilt amount (rotation angle) may be adjusted.
  • a two-dimensional tilt amount may be adjusted.
  • the density filter is used without using the alignment mark on the reticle R. Only the alignment mark 5 5 may be detected by the illuminance sensor 63 or the like. Further, a reference mark provided on reticle stage 21 may be used instead of the alignment mark on the reticle.
  • a manual drive micrometer head is used in place of the drive motors 52 A to 52 C and 53 D. The position may be adjusted.
  • the density filter 55 may be replaced with a density filter having another transmittance distribution.
  • the movable table 53 may be pulled out of the movable table 52 using the handle 62 provided on the movable table 53.
  • Fig. 4 (a) is a diagram showing the transmittance distribution of the fill area of the density fill area 55.
  • the directions corresponding to the X direction and Y direction in Fig. 1 are the X direction and the X direction, respectively.
  • the grid pattern formed in the fill area of the density fill 55 is a pattern drawn virtually to indicate the coordinates, and the transmittance in the fill area is actually 1 (100) %) And 0 (0%). That is, a large number of extremely fine dot patterns are formed in the filter portion so as to obtain a desired transmittance distribution by changing the size and density of each dot pattern depending on the position.
  • the transmittance of 1 means the transmittance of the transparent substrate for the density filter 55 itself. Also generated from the dot pattern In consideration of the diffracted light and the optical characteristics of the illumination optical system (distortion, etc.), the size and density of the dot pattern are adjusted so that the desired illumination light distribution can be obtained on the reticle or wafer, and the light is transmitted. It is desirable to set a rate distribution.
  • a concentration filter In such a concentration filter, a light-shielding film such as chromium is formed on a transparent substrate, an electron beam resist is applied thereon, and a corresponding pattern is drawn thereon by an electron beam drawing apparatus. , Development, etching, resist stripping, and the like. Even if defects or continuous edges are formed in some regions during this manufacturing process, the defects are transferred to the wafer because the filter surface is defocused from the conjugate surface with the reticle R. It will not be done. Therefore, the defocus amount of the density filter 55 is determined by the drawing accuracy of the electron beam lithography apparatus at the time of manufacturing the density filter 55 and the tolerance for the error of the exposure dose on the wafer. Is also taken into account.
  • the transmittance TA of the area (A 1) which is the lower left corner of the fill area, is one-dimensionally decreasing outward in the X direction (xZa) and linearly decreasing outward in the y direction. Multiplied by the original distribution (yZa) It is cloth. Also, the transmittances TA 3 , TA? And TA 9 in the lower right, upper left, and upper right corners of the fill area are one-dimensionally reduced outward in the X direction and the y direction, respectively. Is multiplied by the one-dimensionally decreasing distribution to the outside. In addition, the transmittance T in the region along the line BB in Fig.
  • the pattern of the reticle R of FIG. 1 is illuminated through the density filter 55 having the transmittance distribution of FIG. Expose a part of the area.
  • the reticle on the reticle stage 21 is sequentially replaced with another reticle, and the wafer W is moved by a predetermined amount through the wafer stage 25, and then the pattern of the replaced reticle is filtered by the density filter 55.
  • the reduced image of the pattern is exposed to another portion of the shot area on the wafer W, and the joint 55a of FIG.
  • a region corresponding to ⁇ 55d also referred to as a "joint" is overlaid and exposed.
  • the reduced images of a plurality of reticle patterns are transferred onto the relevant shot area on the wafer W while the screens are connected in the X and Y directions. An almost uniform product exposure amount is provided over the entire area.
  • FIG. 5 shows a large projected image that is exposed to one shot area on the wafer W in FIG. 1 by the exposure for performing the screen splicing of the present example.
  • the projected images 30 A, 30 B, 30 C, and 30 D of the rectangles become the joints 30 AB, 3 at the boundary in the X direction. 0 CD and the joint 30 AC, 30 BD at the boundary in the Y direction are exposed in a double overlapping manner.
  • the corners of the rectangles of the four projected images 30A to 30D are superimposed four-fold. Exposed.
  • reticle stage 21 may be rotated, and the coordinate system of wafer stage 25 may be corrected by the rotation error, and wafer W may be obliquely moved stepwise based on the corrected coordinate system. As a result, it is possible to reduce the exposure error (dose error) at the joint.
  • the transmittance of the density filter 55 is 10. Since it is 0%, the exposure amount is 100%.
  • the integrated exposure amount of the joints 30 AB, 30 BD, 30 CD, 30 AC, and 31 becomes 100%.
  • the projection magnification from the density filter 55 in Fig. 4 (a) to wafer W in Fig. 5 is 1, the width in the X direction of the joints 30 AB, 30 CD is a, The width of the part 30 BD, 30 AC in the Y direction is b. If the point P 3 in FIG.
  • AB (A) and AB (B) be the exposure amounts of the projected images 3OA and 30B at the joint 30AB, and let the integrated exposure amount obtained by adding these exposure amounts be AB. From Eqs. (6) and (4), they are as follows. However, the exposure amount in the areas denoted by the reference signs A to D is 100%.
  • the exposure amounts CD (C) and CD (D) of the projected images 30C and 30D in the joint 30CD and the integrated exposure amount CD thereof are as follows.
  • CD (C) TA 6 (C)
  • CD CD (C) + CD (D)
  • the exposure amounts A C (A) and AC (C) of the projected images 3 OA and 30 C at the joint 30 AC and the integrated exposure amount AC are as follows.
  • a C A C (A) + A C (C)
  • the exposure amounts of the four projected images 3OA, 30B, 30C and 30D at the joint 31 are ABCD (A), ABCD (B), ABCD (C) and ABCD (D). Assuming that the integrated exposure amount is ABCD, these are as follows from Eqs. (3), (1), (9), and (7).
  • AB CD AB CD (A) + AB CD (B) + AB CD (C) + A B CD (D)
  • the peripheral area 11 is not subjected to the overlay exposure, so that the exposure amount gradually decreases outward as it is. Therefore, a region in the joint portion where multiple exposure is not performed is a region outside the pattern region, and the region may be shielded from light by the reticle blind 4 in FIG.
  • Figure 6 shows such a case where light is blocked by the reticle blind 6.
  • the outermost area 11 lacks the other projected image to be superimposed.
  • the amount of exposure is insufficient and the result is incomplete.
  • the main control system 24 drives the reticle blind 4 via a drive unit (not shown) so that the shadow (image) of B, 42A, 42B (see Fig. 2) falls within the range of the light-shielding band. I do.
  • the illumination light of the above-mentioned incomplete portion is shielded, so that the exposure amount on the wafer does not become uneven.
  • the reticle blind 4 since the fill surface of the density filter 55 exists near the plane P 1 conjugate with the pattern surface of the reticle R, the reticle blind 4 does not mechanically interfere with the density filter 55. Then, it is retracted from the plane P1 to a position shifted in the optical axis direction of the illumination optical system. However, in order to prevent the reticle blind 4 from deviating from the plane P1, which is conjugate with the pattern plane, a relay optical system that relays the plane P1 to another conjugate plane is arranged, and the conjugate plane is placed on the relay optics. Reticle blind 4 may be arranged.
  • the width of the light-shielding band provided on the reticle R depends on the amount of blur of the edge of the light-shielding plate of the reticle blind 4 due to this defocus, the control error of the light-shielding plate, and However, it is necessary to comprehensively consider the mechanical accuracy of the light shielding plate, the aberration of the optical system from the reticle blind 4 to the reticle R, and the distortion amount of the optical system.
  • the reticle blind 4 may be replaced with the reticle R pattern surface, for example. (Lower surface).
  • the density filter 55 may be arranged on the bottom surface of the pattern surface of the reticle R, and the reticle blind 4 may be arranged on a plane P1 conjugate with the pattern plane.
  • the reticle blind 4 or the density filter 55 may be arranged on the opposite side of the reticle R from the pattern surface (illumination optical system side).
  • the projection optical system PL re-images the intermediate image of the reticle pattern on the wafer
  • the reticle blind 4 or the density filter 55 is formed from the predetermined surface where the intermediate image is formed in the projection optical system PL.
  • the light amount distribution may be shifted, in short, as long as the light amount distribution in which the illumination light amount on the top gradually decreases outward.
  • the filter surface of the density filter 55 is defocused by an appropriate amount with respect to the surface P1 as described above, if the cleanness of the surrounding environment is low, the filter surface Foreign matter, such as dust, having a size exceeding the allowable range may adhere to the wafer, and the foreign matter may be transferred onto the wafer W through the reticle R.
  • a thin film pellicle as a dust-proof film
  • cellulose which does not affect optically, so as to protect the filler surface.
  • FIG. 9 shows an embodiment in which a dust-proof thin film 58 is installed via a rectangular metal frame (pellicle frame) 57 on the fill surface P2 of the concentration fill 55 in this way.
  • the filter surface P 2 of the density filter 55 and the thin film 58 are arranged so as to sandwich the plane P 1 conjugate with the pattern surface of the reticle.
  • the reticle blind 4 is arranged close to the thin film 58.
  • no foreign matter adheres to the fill surface P2 and the image of the foreign matter adhered to the thin film 58 is defocused and projected on the reticle, and has no adverse effect.
  • prepare a foreign substance inspection machine separately and adjust the allowable range for the fill surface P2 or thin film 58 as necessary. It is desirable to replace the density filter 55 with a density filter that does not have any other foreign matter if such foreign matter is found.
  • a glass plate that is permeable to the illumination light IL having a thickness about the distance between the thin film 58 and the fill surface P2 may be arranged.
  • the glass plate may be fixed in close contact with the filling surface P2.
  • reticle blind 4 When reticle blind 4 is placed on a conjugate plane with a reticle different from that on plane P1, contrary to the arrangement in FIG. It may be arranged facing.
  • a hole communicating with the outside air is formed in a part of the frame 57 so that the thin film 58 is not deformed by a pressure change.
  • a chemical filter as well as a HEPA filter is provided in the hole to prevent ions and silicon-based organic substances from entering the fill surface P2.
  • FIGS. 7A a projection exposure apparatus having the same configuration as the projection exposure apparatus of FIG. 1 is used to expose a projection image of a pattern of a plurality of reticles onto a wafer while performing screen joining.
  • this example is different from the first embodiment in that the density filter 55 shown in FIG. 7A is used instead of the density filter 55 shown in FIG. 1 (FIG. 4A).
  • FIGS. 4 and 5 in FIGS. 7 and 8 are denoted by the same reference numerals, and are obtained by performing exposure while performing the transmittance distribution of the density filter 56 and screen jointing. The exposure distribution will be described.
  • Fig. 7 (a) shows the fill area of the density fill 56 of this example.
  • the joints 56 a , 5 6b the width of a
  • the joints at both ends in the y direction 5 6c, 5 Let b be the width of 6 d, and let a be the width in the x direction of the internal area surrounded by the joints 56 a to 56 d.
  • the range of the fill area in the X and y directions is as follows.
  • TB 2 100 (y / b) [%] (2 2) area (B 3): a + a. X ⁇ 2a + a. , 0 ⁇ y ⁇ b and bx + ay ⁇ b (2 a + ao)
  • T B 4 1 0 0 [1- ⁇ x-(a + a.) ⁇ A] [%] (24)
  • the transmittance TB of the area (B 1), which is the corner of the lower left triangle of the filter area, has a distribution (x / a) that decreases one-dimensionally outward in the X direction, And the distribution (yZa) that decreases one-dimensionally.
  • the transmittance T of this region (B1) along the DD line decreases linearly outward along the oblique position y ', as shown in Fig. 7 (d).
  • the transmittance TB ⁇ of the upper right corner of the filter region (B11) is set symmetrically with the transmittance TB !.
  • the corner of the upper left rectangle of the filter area is also divided into adjacent triangular areas (B 8) and (B 9), and the corresponding transmittance TB 8 and TB 9 are set symmetrically with the transmittances TB 4 and TB 3 .
  • the transmittance T in the region along the line BB in Fig. 7 (a) changes linearly from 0 to 1 (100%) with respect to the position X as shown in Fig. 7 (b).
  • the transmittance T in the region along the CC line in FIG. 7 (a) changes linearly from 0 to 1 (100%) with respect to the position y as shown in FIG. 7 (c).
  • the reticle on the reticle stage 21 shown in Fig. 1 is illuminated through the density filter 56 having the transmittance distribution shown in Fig. 7 (a), and a reduced image of the reticle pattern is formed while screen joining is performed. Is exposed to the shot area on the wafer W.
  • FIG. 8 shows a large projection image exposed to one shot area on the wafer W in FIG. 1 by the exposure for performing the screen splicing in this example.
  • 3 A, 3 2 B, 32 C, 32 D force Joints at the boundary in the X direction 3 2 AB, 32 CD, and joints at the boundary in the Y direction 3 2 AC, Exposure is performed so that 32 BDs are superimposed twice.
  • the rectangular joint where the four projected images 32A to 32D are adjacent to each other is divided into triangular joints 33 and 34 across the oblique boundary line 35, and the joint 33 projects at A part of the image 32A, 32B, 32D is exposed in a triple overlapped manner, and the projected image 32A, 3
  • a part of 2C and 32D is exposed in triple overlap.
  • the transmittance of the density filter 56 is 10. Since it is 0%, the exposure amount is 100%.
  • the joint 3 2 AB is
  • the integrated exposure amount of 32 BD, 32 CD, and 32 AC is 100% as in the embodiment of FIG.
  • the integrated exposure amount of the joints 33 and 34 is also 100%.
  • the point P 3 in FIG. 8 is set as the origin of the coordinates (X, Y), and the coordinates of the point P when the point P 3 is set as the origin is (X, Y).
  • Y the coordinates ( ⁇ , ⁇ ), ( ⁇ , ⁇ ) (X Yc), with the lower left point of the projected images 32A, 32B, 32C, 32D as the origin.
  • ( ⁇ , ⁇ ) are as follows.
  • the integrated exposure amount ABCDl at the joint portion 34 is as follows.
  • ABCDl ABCD1 (A) + ABCDl (0 + ABCDl (D)
  • ABCD2 ABCD2 (A) + ABCD2 (B) + ABCD2 (D)
  • the same amount of exposure light as that of the other areas can be obtained in the rectangular areas (joints 33, 34) where the four projected images 32A to 32D are adjacent. Therefore, the uniformity of the exposure amount is maintained over the entire projected image.
  • the present invention is applied to the case of manufacturing a semiconductor device, a liquid crystal display, a plasma display, and the like by the bridge exposure method, but the present invention uses a peak reticle as a mask in the bridge exposure method. It can be applied to the case of manufacturing.
  • the original pattern obtained by enlarging the reticle pattern is divided into a plurality of parts, and the divided original patterns are drawn on a plurality of master reticles.
  • the reduced images of the patterns of the master reticle are glass-connected by the density exposure method 55, 56 as in the above-described embodiment. Transfer onto a mask substrate such as a substrate.
  • a light-shielding film such as chromium is formed on the mask substrate in advance, and a photoresist is applied thereon. Therefore, by performing development, etching, resist stripping, and the like after the bridge exposure, a single reticle is manufactured with high accuracy and high line width uniformity.
  • a silicon wafer or the like is used as a mask substrate of a working reticle. Particularly in EUV exposure equipment, a reflective working reticle is used.
  • the optical path of the illumination optical system is Gases with high transmittance, such as nitrogen gas (N 2 ) and helium gas (H e), are purged.
  • N 2 nitrogen gas
  • H e helium gas
  • the space surrounded by the thin film 58, the frame 57, and the concentration filter 55 is filled with a gas having a high transmittance, or through an opening provided in the frame 57. It is desirable to flow the gas.
  • a reticle blind 4 is arranged close to the exit surface, and a density filter 5 ⁇ is close to the reticle blind 4.
  • a fill surface of the density fill 55 may be arranged on a surface conjugate with the exit surface between the rod / integre and the reticle, or on a surface slightly shifted from this surface.
  • the density filter 55 can be changed according to the size and shape of the pattern area on the reticle. At this time, in order to automatically perform the exchange, it is preferable that a plurality of density filters having different sizes be fixed to an evening lett plate on the positioning device 5 or the like.
  • the device for detecting the alignment mark of the density filter 55 (or 56) is not limited to the illuminance sensor 63.
  • An optical system having at least a light receiving unit may be provided and used on the wafer stage 25 separately from 3, or a dedicated optical system may be incorporated in the illumination optical system.
  • the above-mentioned illumination light IL may be used as the detection light of the alignment mark, or a light source different from the light source 1 may be prepared so that light having substantially the same wavelength as the illumination light IL is used. You may.
  • the present invention is applied to a batch exposure type projection exposure apparatus.
  • the present invention can be similarly applied to a case where a connection exposure is performed by a proximity type exposure apparatus. it can.
  • the present invention can be applied to a case where a connecting exposure is performed by a scanning exposure type projection exposure apparatus such as a step-and-scan method.
  • the present invention is also applicable to a case where a bridge exposure is performed by an EUV exposure apparatus that uses extreme ultraviolet light (EUV light) such as soft X-ray or X-ray having a wavelength of about 5 nm to 15 nm as an exposure beam. be able to.
  • EUV light extreme ultraviolet light
  • a concentration film (dimming filter) is used as a reflection film (for example, a multilayer of molybdenum and silicon) with a predetermined reflectance distribution on a reflective substrate.
  • a reflective filter formed with a film or a multilayer film of molybdenum and beryllium may be used.
  • a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser as illumination light for exposure may be used, for example, by using Erbium (Er) (or both Erbium and Ytterbium (Yb)).
  • Er Erbium
  • Yb Ytterbium
  • a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser as illumination light for exposure may be used, for example, by using Erbium (Er) (or both Erbium and Ytterbium (Yb)).
  • Er Er
  • Yb Ytterbium
  • the oscillation wavelength of a single-wavelength laser is in the range of 1.544 to 1.553 m
  • the 8th harmonic in the range of 193 to 194 nm, that is, almost the same as the ArF excimer laser Assuming that ultraviolet light having the same wavelength is obtained and the oscillation wavelength is in the range of 1.57 to 1.58 m, the 10th harmonic in the range of 157 to 158 nm, that is, F 2 Ultraviolet light having substantially the same wavelength as that of one laser is obtained.
  • an illumination optical system composed of an exposure light source and an illuminance uniforming optical system, and a projection optical system are incorporated in the main body of the exposure apparatus for optical adjustment, and a reticle stage and a wafer stage composed of many mechanical parts are mounted on the exposure apparatus.
  • the projection exposure apparatus of the above-described embodiment can be mounted by attaching it to the main body, connecting wiring and piping, attaching the density filter 55 of the above-described embodiment, and performing overall adjustment (electrical adjustment, operation confirmation, etc.). Can be manufactured. It is desirable to manufacture the exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.
  • the integrated exposure amount in a portion where the four patterns are adjacent is substantially equal to the integrated exposure amount in other portions.
  • a large-sized mask can be manufactured with high accuracy and high throughput without causing a defect even when a large-sized mask is formed by screen joining.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un procédé d'exposition selon lequel l'exposition totale de la partie où quatre motifs sont adjacents l'un de l'autre est sensiblement égale à celle des autres parties lorsque les motifs sont transférés bidimensionnellement par maillage d'image. Les images projetées (30A - 30D) des motifs ou un réticule sont maillés de façon à se chevaucher les uns les autres selon les axe X et Y sur une plaquette de façon à exposer la plaquette. La distribution de l'exposition des parties en coins rectangulaires, c'est-à-dire les zones (parties de maillage (31)) où les quatre images projetées (30A - 30D) sont adjacentes les unes des autres est déterminée en fonction de la caractéristique qui est le produit d'une première caractéristique décroissant graduellement selon l'axe X avec une seconde caractéristique décroissant selon l'axe Y.
PCT/JP2000/001540 1999-03-26 2000-03-14 Procede et dispositif d'exposition WO2000059012A1 (fr)

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KR1020017010813A KR20010112286A (ko) 1999-03-26 2000-03-14 노광방법 및 장치
AU29445/00A AU2944500A (en) 1999-03-26 2000-03-14 Exposure method and apparatus

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JP11/83178 1999-03-26
JP8317899 1999-03-26

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607863B2 (en) 2000-02-29 2003-08-19 Nikon Corporation Exposure method of production of density filter
WO2004066371A1 (fr) * 2003-01-23 2004-08-05 Nikon Corporation Dispositif d'exposition
JP2006203032A (ja) * 2005-01-21 2006-08-03 Victor Co Of Japan Ltd 素子の製造方法
WO2008120785A1 (fr) * 2007-04-03 2008-10-09 Nsk Ltd. Appareil d'exposition et procédé d'exposition
JP2008256810A (ja) * 2007-04-03 2008-10-23 Nsk Ltd 露光方法及び露光装置
US8480946B2 (en) 2008-03-06 2013-07-09 Kabushiki Kaisha Toshiba Imprint method and template for imprinting
US8797510B2 (en) 2007-01-22 2014-08-05 Tokyo Denki University Gradient refractive index lens array projection exposure
CN111258172A (zh) * 2020-01-21 2020-06-09 中国科学院微电子研究所 用于制造显示面板的新型掩模版及其参数确定方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135166A (ja) * 1993-11-11 1995-05-23 Nikon Corp 露光装置
JPH07235466A (ja) * 1994-02-22 1995-09-05 Nikon Corp 露光装置
US5486896A (en) * 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
JPH10256140A (ja) * 1997-03-07 1998-09-25 Canon Inc デバイス露光装置および方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486896A (en) * 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
JPH07135166A (ja) * 1993-11-11 1995-05-23 Nikon Corp 露光装置
JPH07235466A (ja) * 1994-02-22 1995-09-05 Nikon Corp 露光装置
JPH10256140A (ja) * 1997-03-07 1998-09-25 Canon Inc デバイス露光装置および方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607863B2 (en) 2000-02-29 2003-08-19 Nikon Corporation Exposure method of production of density filter
WO2004066371A1 (fr) * 2003-01-23 2004-08-05 Nikon Corporation Dispositif d'exposition
JP2006203032A (ja) * 2005-01-21 2006-08-03 Victor Co Of Japan Ltd 素子の製造方法
US8797510B2 (en) 2007-01-22 2014-08-05 Tokyo Denki University Gradient refractive index lens array projection exposure
WO2008120785A1 (fr) * 2007-04-03 2008-10-09 Nsk Ltd. Appareil d'exposition et procédé d'exposition
JP2008256810A (ja) * 2007-04-03 2008-10-23 Nsk Ltd 露光方法及び露光装置
US8480946B2 (en) 2008-03-06 2013-07-09 Kabushiki Kaisha Toshiba Imprint method and template for imprinting
CN111258172A (zh) * 2020-01-21 2020-06-09 中国科学院微电子研究所 用于制造显示面板的新型掩模版及其参数确定方法

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AU2944500A (en) 2000-10-16

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