WO2016136690A1 - 計測装置、リソグラフィシステム及び露光装置、並びに管理方法、重ね合わせ計測方法及びデバイス製造方法 - Google Patents
計測装置、リソグラフィシステム及び露光装置、並びに管理方法、重ね合わせ計測方法及びデバイス製造方法 Download PDFInfo
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Definitions
- the present invention relates to a measurement apparatus, a lithography system, an exposure apparatus, a management method, an overlay measurement method, and a device manufacturing method, and more particularly to a measurement apparatus that measures positional information of a plurality of marks formed on a substrate, and the measurement.
- a lithography system including an exposure apparatus having a substrate stage on which a substrate on which measurement of positional information of a plurality of marks by the apparatus has been placed and the measurement apparatus is provided, an exposure apparatus including the measurement apparatus, and a plurality of on the substrate
- the present invention relates to a management method for managing variations in the arrangement of partitioned areas, an overlay measurement method for measuring a substrate, and a device manufacturing method using the lithography system or exposure apparatus.
- a multilayer circuit pattern is formed on a substrate such as a wafer or a glass plate (hereinafter collectively referred to as a wafer), but the overlay accuracy between the layers is poor.
- a semiconductor element or the like cannot exhibit predetermined circuit characteristics, and may be a defective product in some cases.
- a mark is formed in advance on each of a plurality of shot areas on the wafer, and the position (coordinate value) of the mark on the stage coordinate system of the exposure apparatus is detected. Thereafter, based on this mark position information and known position information of a newly formed pattern (for example, a reticle pattern), wafer alignment for aligning one shot area on the wafer with the pattern is performed. .
- the wafer grid means a lattice formed by connecting the centers of shot areas on a wafer arranged according to a shot map (data relating to the arrangement of shot areas formed on the wafer).
- the wafer grid is abbreviated as “grid” or is also described as “shot region (or shot) arrangement”.
- a measuring device for measuring positional information of a plurality of marks formed on a substrate, the stage being movable while holding the substrate, a drive system for driving the stage, and a grating
- a measurement surface having a portion and a head portion for irradiating the measurement surface with a beam is provided on the stage, irradiates the measurement surface with a beam from the head portion, and returns the beam from the measurement surface to the measurement surface.
- An absolute position measurement system that can receive position information of the stage by receiving light, a mark detection system that detects a mark formed on the substrate, a drive of the stage by the drive system, and the mark detection system
- the plurality of marks formed on the substrate are respectively detected using a detection result, and the detection result of each of the plurality of marks and the detection of each of the plurality of marks are detected.
- a control device for determining the absolute position coordinates of each of the plurality of marks, measurement device comprising a is provided.
- the measurement apparatus according to the first aspect, and the substrate stage on which the substrate on which the measurement of the positional information of the plurality of marks by the measurement apparatus is completed is placed, the substrate stage Exposure in which the substrate placed thereon is subjected to alignment measurement for measuring positional information of selected marks among a plurality of marks on the substrate and exposure for exposing the substrate with an energy beam.
- a lithography system comprising the apparatus.
- a device manufacturing method including exposing a substrate using the lithography system according to the second aspect and developing the exposed substrate.
- an exposure apparatus that includes the measurement apparatus according to the first aspect and exposes a substrate, on which position information of a plurality of marks is acquired using the measurement apparatus, with an energy beam.
- a device manufacturing method including exposing a substrate using the exposure apparatus according to the fourth aspect and developing the exposed substrate.
- a management method for managing a variation in the arrangement of a plurality of partitioned areas arranged in a matrix on a substrate wherein the pattern and the mark formed on the mask are placed on the substrate by the exposure apparatus.
- a plurality of partition regions are formed on the substrate together with the marks by sequentially transferring, and the substrate on which the plurality of partition regions are formed is mounted on a stage movable within a predetermined plane, and the position of the stage Information is irradiated to a measurement surface having a grating portion provided on the stage via a head portion, and a return beam of the beam is received from the measurement surface to receive an absolute position of the stage in the predetermined plane.
- the mark corresponding to each of the plurality of partitioned areas on the substrate is measured using a mark detection system.
- the plurality of marks corresponding to each of the plurality of partitioned regions on the substrate based on detection results of the plurality of marks and measurement information of the absolute position measurement system at the time of detection of the plurality of marks.
- a management method comprising: obtaining absolute position coordinates of the mark in the predetermined plane; and obtaining array information of the plurality of partition regions based on the obtained absolute position coordinates of the plurality of marks.
- the seventh aspect there are a plurality of pairs of the first mark image and the corresponding second mark image by the exposure of the first layer and the exposure of the second layer using the first layer as a base layer.
- a method of overlay measurement in which a substrate formed in a predetermined positional relationship is a measurement target, wherein the measurement target substrate is provided with one of a measurement surface having a lattice portion and a head portion for irradiating the measurement surface with a beam.
- the stage position information is irradiated to the measurement surface via the head unit, and a plurality of beams are irradiated to receive return beams from the measurement surface of the plurality of beams, respectively.
- the image and the second mark image And detecting the plurality of sets of the first mark image and the second mark image of the plurality of sets, and the measurement information of the position measurement system at the time of detection of the respective mark images. Determining absolute position coordinates in the predetermined plane of each of the first mark image and the second mark image of the set, and the absolute position coordinates of the first mark image and the second mark image forming a pair with each other To obtain an overlay error based on the above.
- FIG. 2A is a partially omitted front view of the measuring apparatus of FIG. 1 (viewed from the ⁇ Y direction), and FIG. 2B is a cross-sectional view taken along the XZ plane passing through the optical axis AX1 of the mark detection system. It is sectional drawing which a part of measurement apparatus was abbreviate
- FIG. 4A is a perspective view showing the head portion of the first position measurement system, and FIG.
- FIG. 4B is a plan view of the head portion of the first position measurement system (viewed from the + Z direction). It is a figure for demonstrating the structure of a 2nd position measurement system. It is a block diagram which shows the input-output relationship of the control apparatus which mainly comprises the control system of the measuring device which concerns on 1st Embodiment. It is a flowchart corresponding to the processing algorithm of the control apparatus at the time of processing the wafer of 1 lot. It is a figure which shows schematically the whole structure of the lithography system which concerns on 2nd Embodiment. It is a figure which shows schematically the structure of the exposure apparatus shown by FIG. It is a block diagram which shows the input / output relationship of the exposure control apparatus with which an exposure apparatus is provided.
- FIG. 3 is a diagram schematically showing a processing flow when a wafer grid management method caused by an exposure apparatus using the measurement apparatus 100 is applied to a lithography system 1000.
- FIG. 3 is a diagram schematically showing a flow of processing when an overlay measurement method using the measurement apparatus 100 is applied to a lithography system 1000. It is a figure which shows schematically the whole structure of the lithography system which concerns on a modification.
- FIG. 1 schematically shows a configuration of a measuring apparatus 100 according to the first embodiment in a perspective view.
- the measuring apparatus 100 shown in FIG. 1 is actually composed of a chamber and components housed in the chamber, but in this embodiment, the description of the chamber is omitted.
- a mark detection system MDS is provided as will be described later.
- the direction of the optical axis AX1 of the mark detection system MDS is defined as the Z-axis direction, and a movable stage described later within a plane perpendicular to the Z-axis direction.
- the direction of the long stroke is the Y-axis direction
- the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction
- the rotation (tilt) directions around the X-, Y-, and Z-axes are ⁇ x, ⁇ y, and ⁇ z, respectively.
- the direction will be described.
- the mark detection system MDS has an L-shaped outer shape when viewed from the side (for example, viewed from the + X direction), and a cylindrical barrel portion 41 is provided at a lower end (tip) thereof.
- An optical system (refractive optical system) composed of a plurality of lens elements having an optical axis AX1 in the Z-axis direction is housed inside the.
- the optical axis AX1 of the refractive optical system inside the lens barrel 41 is referred to as the optical axis AX1 of the mark detection system MDS.
- FIG. 2A is a partially omitted front view of the measuring apparatus 100 of FIG. 1 (viewed from the ⁇ Y direction), and FIG. 2B shows an XZ plane passing through the optical axis AX1.
- a cross-sectional view of the measuring device 100 taken along the line is partially omitted.
- FIG. 3 a cross-sectional view of the measuring device 100 taken along the YZ plane passing through the optical axis AX1 is partially omitted.
- the measuring apparatus 100 has a surface plate 12 having an upper surface substantially parallel to an XY plane orthogonal to the optical axis AX1, and a surface plate 12 that is disposed on the surface plate 12 and holds the wafer W.
- a wafer slider (hereinafter abbreviated as a slider) 10 that can move with a predetermined stroke in the X-axis and Y-axis directions and that can move in the Z-axis, ⁇ x, ⁇ y, and ⁇ z directions (minute displacement), and a slider Drive system 20 (not shown in FIG. 1; see FIG.
- a first position measurement system 30 (not shown in FIG. 1, refer to FIGS. 3 and 6) for measuring position information of a direction) and a mark on the wafer W mounted (held) on the slider 10 Measurement with mark detection system MDS to detect
- the second position measuring system 50 (not shown in FIG. 1, refer to FIG. 6) for measuring relative position information of the knit 40, the mark detection system MDS (measuring unit 40) and the surface plate 12, and the drive system 20.
- the measurement information by the first position measurement system 30 and the measurement information by the second position measurement system 50 are acquired, and a plurality of pieces on the wafer W held by the slider 10 using the mark detection system MDS.
- a control device 60 (not shown in FIG. 1, refer to FIG. 6) for obtaining the position information of the mark.
- the surface plate 12 is made of a rectangular (or square) rectangular parallelepiped member in plan view, and the upper surface thereof is finished to have a very high flatness to form a guide surface when the slider 10 is moved.
- a material of the surface plate 12 a material having a low thermal expansion coefficient called a zero expansion material, for example, an invar type alloy, an extremely low expansion cast steel, or an extremely low expansion glass ceramic is used.
- the surface plate 12 has a notch shape in which the bottom is opened at three places in total, one at the center in the X-axis direction of the surface on the -Y side and one at each end in the X-axis direction on the surface at the + Y side.
- the void 12a is formed. In FIG. 1, among the three cavities 12a, cavities 12a formed on the ⁇ Y side surface are shown.
- a vibration isolator 14 is disposed inside each of the voids 12a.
- the surface plate 12 is supported at three points by the three vibration isolation devices 14 on the upper surface parallel to the XY plane of the rectangular base frame 16 installed on the floor F so that the upper surface is substantially parallel to the XY plane. Has been.
- the number of vibration isolation devices 14 is not limited to three.
- the slider 10 has four aerostatic bearings (air bearings) 18 at the four corners of the bottom surface, a total of four, and the respective bearing surfaces are substantially flush with the lower surface of the slider 10.
- the static pressure pressure in the gap
- the slider 10 is levitated and supported on the upper surface of the surface plate 12 via a predetermined clearance (gap, gap), for example, a clearance of about several ⁇ m.
- the slider 10 is made of zero expansion glass (for example, Schott's Zerodur) which is a kind of zero expansion material.
- a concave portion 10a having a predetermined circular depth in plan view with an inner diameter slightly larger than the diameter of the wafer W is formed on the upper portion of the slider 10, and a wafer holder WH having a diameter substantially the same as the diameter of the wafer W is disposed inside the concave portion 10a.
- a vacuum chuck, an electrostatic chuck, a mechanical chuck, or the like can be used as the wafer holder WH.
- a pin chuck type vacuum chuck is used as an example.
- the wafer W is attracted and held by the wafer holder WH in a state where the upper surface thereof is substantially flush with the upper surface of the slider 10.
- a plurality of suction ports are formed in the wafer holder WH, and the plurality of suction ports are connected to the vacuum pump 11 (see FIG. 6) via a vacuum piping system (not shown). Then, on / off of the vacuum pump 11 and the like are controlled by the control device 60. Note that one or both of the slider 10 and the wafer holder WH may be referred to as a “first substrate holding member”.
- the slider 10 moves up and down through, for example, three circular openings formed in the wafer holder WH, and cooperates with a wafer transfer system 70 (not shown in FIG. 1, see FIG. 6) to place the wafer on the wafer holder WH. And a vertical movement member (not shown) for loading the wafer from the wafer holder WH.
- the drive device 13 that drives the vertical movement member is controlled by the control device 60 (see FIG. 6).
- the wafer holder WH for example, a wafer holder having a size capable of sucking and holding a 300 mm wafer having a diameter of 300 mm is used.
- a wafer transfer system 70 has a non-contact holding member, such as a Bernoulli chuck, for sucking and holding the wafer on the wafer holder WH from above, it is necessary to provide a vertical movement member on the slider 10. In addition, it is not necessary to form a circular opening for the vertically moving member in the wafer holder WH.
- the grating RG1 includes a reflective diffraction grating (X diffraction grating) whose periodic direction is the X-axis direction and a reflective diffraction grating (Y diffraction grating) whose periodic direction is the Y-axis direction.
- the pitch of the grating lines of the X diffraction grating and the Y diffraction grating is set to 1 ⁇ m, for example.
- the vibration isolator 14 is an active vibration isolation system (so-called AVIS (Active Vibration Isolation System)), an accelerometer, a displacement sensor (such as a capacitance sensor), an actuator (such as a voice coil motor), and an air damper.
- An air mount that functions as The vibration isolator 14 can dampen relatively high-frequency vibrations with an air mount (air damper), and can also perform vibration isolation (vibration suppression) with an actuator. Therefore, the vibration isolator 14 can avoid vibration from being transmitted between the surface plate 12 and the base frame 16.
- a hydraulic damper may be used.
- the actuator is provided in addition to the air mount because the internal pressure of the gas in the air chamber of the air mount is high, so the control response can only be secured about 20 Hz, so when high response control is required, This is because it is necessary to control the actuator in accordance with the output of an accelerometer (not shown). However, slight vibrations such as floor vibrations are isolated by the air mount.
- the upper end surface of the vibration isolator 14 is connected to the surface plate 12.
- a gas for example, compressed air
- the air mount is in accordance with the amount of gas (the change in pressure of the compressed air) filled therein. It expands and contracts with a predetermined stroke (for example, about 1 mm) in the Z-axis direction. For this reason, by moving the three portions of the surface plate 12 up and down individually from below using the air mounts of the three vibration isolation devices 14, the surface plate 12 and the slider 10 that is levitated and supported on the surface plate 12 are The positions in the axial direction, ⁇ x direction, and ⁇ y direction can be arbitrarily adjusted.
- the actuator of the vibration isolator 14 can drive the surface plate 12 not only in the Z-axis direction but also in the X-axis direction and the Y-axis direction. Note that the drive amount in the X-axis direction and the Y-axis direction is smaller than the drive amount in the Z-axis direction.
- the three vibration isolation devices 14 are connected to the control device 60 (see FIG. 6). Note that each of the three vibration isolation devices 14 may include an actuator that can move the surface plate 12 in a six-degree-of-freedom direction, not limited to the X-axis direction, the Y-axis direction, and the Z-axis direction.
- the control device 60 is a head unit of the first position measurement system 30 which will be described later.
- the actuators of the three vibration isolator 14 are always controlled in real time so that the position of the surface plate 12 on which the 32 is fixed maintains the desired positional relationship with respect to the mark detection system MDS.
- Each of the three vibration isolation devices 14 may be feed-forward controlled.
- the control device 60 may perform feed-forward control on each of the three vibration isolation devices 14 based on the measurement information of the first position measurement system 30. The control of the vibration isolation device 14 by the control device 60 will be further described later.
- the drive system 20 includes a first drive device 20A that drives the slider 10 in the X-axis direction, and a second drive device that drives the slider 10 in the Y-axis direction integrally with the first drive device 20A. 20B.
- a pair of movable elements 22a which are made up of magnet units (or coil units) and have an inverted L shape in side view, are provided in the X-axis direction on the side surface of the slider 10 on the -Y side. Fixed at intervals.
- a pair of movers 22b composed of a magnet unit (or coil unit) (however, the + X side mover 22b is not shown) is arranged in the X-axis direction.
- the pair of movers 22a and the pair of movers 22b are arranged symmetrically, but are configured in the same manner.
- the movable elements 22a and 22b are arranged at a predetermined distance in the Y-axis direction constituting a part of the movable stage 24 having a rectangular frame shape in plan view, and extend in the X-axis direction.
- the pair of plate members 24a and 24b are supported in a non-contact manner on upper surfaces substantially parallel to the XY plane. That is, air bearings (not shown) are provided on the lower surfaces of the movable elements 22a and 22b (surfaces facing the plate members 24a and 24b, respectively), and these air bearings are generated for the plate members 24a and 24b.
- the movers 22a and 22b are supported by the movable stage 24 from below without contact.
- the weight of the slider 10 to which each pair of movable elements 22a and 22b is fixed is supported by the floating force generated by the four air bearings 18 with respect to the surface plate 12, as described above.
- stators 26a and 26b made of coil units (or magnet units) are provided on the upper surfaces of the pair of plate members 24a and 24b in the region excluding both ends in the X-axis direction. Has been placed.
- a driving force (electromagnetic force) for driving the pair of movable elements 22b in the X-axis direction and a driving force for driving the Y-axis direction by the electromagnetic interaction between the pair of movable elements 22b and the stator 26b. (Electromagnetic force) is generated.
- the pair of movers 22a and the stator 26a constitutes an XY linear motor 28A that generates driving forces in the X-axis direction and the Y-axis direction
- the pair of movers 22b and the stator 26b constitutes the X-axis direction
- an XY linear motor 28B that generates a driving force in the Y-axis direction.
- the XY linear motor 28A and the XY linear motor 28B drive the slider 10 with a predetermined stroke in the X-axis direction and a minute amount in the Y-axis direction.
- a first driving device 20A for driving is configured (see FIG. 6).
- the first drive device 20A can drive the slider 10 in the ⁇ z direction by changing the magnitudes of the drive forces in the X-axis direction generated by the XY linear motor 28A and the XY linear motor 28B, respectively.
- the first drive device 20A is controlled by the control device 60 (see FIG. 6).
- the first driving device 20A has a driving force in the X-axis direction because the first driving device 20A and the second driving device to be described later constitute a coarse / fine movement driving system that drives the slider 10 in the Y-axis direction.
- the driving force in the Y-axis direction is also generated, the first driving device 20A does not necessarily need to generate the driving force in the Y-axis direction.
- the movable stage 24 includes a pair of plate members 24a and 24b and a pair of connecting members 24c and 24d that are arranged at a predetermined distance in the X-axis direction and extend in the Y-axis direction. Step portions are formed at both ends of the connecting members 24c and 24d in the Y-axis direction. Then, the connecting members 24c, 24d and the plate member 24a are placed in a state where one end and the other end in the longitudinal direction of the plate member 24a are placed on the ⁇ Y side step of each of the connecting members 24c, 24d. It is integrated.
- connecting members 24c and 24d and the plate member 24b are integrated with each other in a state where one end and the other end in the longitudinal direction of the plate member 24b are placed on the stepped portion on the + Y side of each of the connecting members 24c and 24d. (See FIG. 2B). That is, in this way, the pair of plate members 24a and 24b are coupled by the pair of coupling members 24c and 24d, and the movable stage 24 having a rectangular frame shape is configured.
- a pair of linear guides 27a and 27b extending in the Y-axis direction are fixed in the vicinity of both ends in the X-axis direction on the upper surface of the base frame 16.
- a stator of a Y-axis linear motor 29A comprising a coil unit (or magnet unit) over the almost entire length in the Y-axis direction in the vicinity of the upper surface and the ⁇ X side surface. 25a (see FIG. 2B) is stored.
- a magnet unit or a coil unit
- a movable element 23a constituting the Y-axis linear motor 29A is disposed together with the stator 25a.
- Air bearings for ejecting pressurized air to the opposed surfaces are fixed to the lower surface and the + X side surface of the mover 23a, which are opposed to the upper surface and the ⁇ X side surface of the linear guide 27a, respectively.
- a vacuum preload type air bearing is used as the air bearing fixed to the + X side surface of the movable element 23a.
- This vacuum preload type air bearing is provided between the mover 23a and the linear guide 27a by the balance between the static pressure of the pressurized air between the bearing surface and the -X side surface of the linear guide 27a and the vacuum preload.
- the clearance in the X-axis direction (gap, gap) is maintained at a constant value.
- a plurality of, for example, two X guides 19 made of, for example, two rectangular parallelepiped members are fixed at a predetermined interval in the Y-axis direction.
- Each of the two X guides 19 is engaged with a non-contact slide member 21 having an inverted U-shaped cross section that constitutes a uniaxial guide device together with the X guide 19.
- Air bearings are respectively provided on three surfaces of the slide member 21 facing the X guide 19.
- the two slide members 21 are respectively fixed to the lower surface (the surface on the ⁇ Z side) of the connecting member 24c as shown in FIG.
- the other linear guide 27b located on the ⁇ X side accommodates the stator 25b of the Y-axis linear motor 29B formed of a coil unit (or magnet unit) inside and is symmetrical, but has the same configuration as the linear guide 27a. (See FIG. 2B). Opposed to the upper surface of the linear guide 27b and the surface on the + X side, it is composed of a magnet unit (or a coil unit) that is symmetric but has the same L-shaped cross section as the mover 23a.
- a Y axis linear motor A mover 23b constituting 29B is arranged.
- Air bearings are fixed to the lower surface of the mover 23b and the ⁇ X side surface, respectively, facing the upper surface and the + X side surface of the linear guide 27b, and in particular, fixed to the ⁇ X side surface of the mover 23b.
- a vacuum preload type air bearing is used as the air bearing. By this vacuum preload type air bearing, the clearance (gap, gap) in the X-axis direction between the mover 23b and the linear guide 27b is maintained at a constant value.
- the movable stage 24 is supported from below by movable elements 23a and 23b via two uniaxial guide devices on each of the + X side and the ⁇ X side (four in total), and in the X-axis direction on the movable elements 23a and 23b. It is movable. For this reason, when the slider 10 is driven in the X-axis direction by the first driving device 20A, the reaction force of the driving force acts on the movable stage 24 provided with the stators 26a and 26b, and the movable stage 24 moves in the direction opposite to the slider 10 in accordance with the momentum conservation law.
- the occurrence of vibration due to the reaction force of the driving force in the X-axis direction with respect to the slider 10 is prevented (or effectively suppressed) by the movement of the movable stage 24. That is, the movable stage 24 functions as a counter mass when the slider 10 moves in the X-axis direction. However, the movable stage 24 is not necessarily required to function as a counter mass. The slider 10 is not particularly provided because it only moves minutely in the Y-axis direction with respect to the movable stage 24. However, vibration due to the driving force that drives the slider 10 in the Y-axis direction with respect to the movable stage 24 is generated. A counter mass for preventing (or effectively suppressing) the above may be provided.
- the Y-axis linear motor 29A generates a driving force (electromagnetic force) that drives the mover 23a in the Y-axis direction by electromagnetic interaction between the mover 23a and the stator 25a, and the Y-axis linear motor 29B is movable.
- a driving force (electromagnetic force) for driving the mover 23b in the Y-axis direction is generated by electromagnetic interaction between the child 23b and the stator 25b.
- the driving force in the Y-axis direction generated by the Y-axis linear motors 29A and 29B acts on the movable stage 24 via two uniaxial guide devices on the + X side and the ⁇ X side. Thereby, the slider 10 is driven in the Y-axis direction integrally with the movable stage 24. That is, in the present embodiment, the second drive device 20B that drives the slider 10 in the Y-axis direction by the movable stage 24, the four uniaxial guide devices, and the pair of Y-axis linear motors 29A and 29B (see FIG. 6). Is configured.
- the pair of Y-axis linear motors 29A and 29B are physically separated from the surface plate 12 and are also vibrationally separated by the three vibration isolation devices 14.
- the linear guides 27a and 27b provided with the stators 25a and 25b of the pair of Y-axis linear motors 29A and 29B can be moved in the Y-axis direction with respect to the base frame 16 so that the Y of the slider 10 You may make it function as a counter mass at the time of the drive of an axial direction.
- the measurement unit 40 has a unit main body 42 in which a notch-like cavity 42a having an open bottom is formed on the ⁇ Y side surface, and a base end portion is inserted into the cavity 42a.
- the above-described mark detection system MDS connected to the unit main body 42 in the state of being connected, and a connection mechanism 43 that connects the lens barrel 41 at the tip of the mark detection system MDS to the unit main body 42.
- the connection mechanism 43 includes a support plate 44 that supports the lens barrel portion 41 on the back side (+ Y side) via a mounting member (not shown), and supports the support plate 44 at one end portion and the other end portion of the unit main body 42. And a pair of support arms 45a and 45b fixed to the bottom surface of the.
- a detection beam having a wavelength that does not sensitize the resist is used as the mark detection system MDS in response to the application of a sensitive agent (resist) to the upper surface of the wafer held on the slider 10.
- the mark detection system MDS for example, the target mark is irradiated with a broadband detection light beam that does not expose the resist applied on the wafer, and the image of the target mark formed on the light receiving surface by the reflected light from the target mark is not detected.
- An image processing type FIA (Field Image Alignment) system that takes an image of an indicator (an indicator pattern on an indicator plate provided inside) using an imaging device (CCD or the like) and outputs the image pickup signal. Is used.
- An imaging signal from the mark detection system MDS is supplied to the control device 60 via a signal processing device 49 (not shown in FIG. 1, see FIG. 6) (see FIG. 6).
- the mark detection system MDS has an alignment autofocus function for adjusting the focal position of the optical system.
- a substantially isosceles triangular head mounting member 51 is disposed between the lens barrel portion 41 and the support plate 44.
- the head mounting member 51 is formed with an opening penetrating in the Y-axis direction of FIG. 1, and the lens barrel portion 41 is attached to the support plate 44 through an mounting member (not shown) inserted into the opening. (Fixed).
- the back surface of the head mounting member 51 is also fixed to the support plate 44. In this way, the lens barrel 41 (mark detection system MDS), the head mounting member 51, and the support plate 44 are integrated with the unit main body 42 via the pair of support arms 45a and 45b.
- the image processing signal output as a detection signal from the mark detection system MDS is processed to calculate the position information of the target mark with respect to the detection center, and the signal processing device 49 described above that is output to the control device 60, etc. Is arranged.
- the unit main body 42 is supported at three points from below through a plurality of, for example, three vibration isolation devices 48 on a gate-shaped support frame 46 as viewed from the ⁇ Y side installed on the base frame 16.
- Each vibration isolator 48 is an active vibration isolation system (so-called AVIS (Active Vibration Isolation System)), an accelerometer, a displacement sensor (such as a capacitance sensor), an actuator (such as a voice coil motor), and the like.
- AVIS Active Vibration Isolation System
- the vibration isolator 48 includes a mechanical damper such as an air damper or a hydraulic damper, and the vibration isolator 48 can dampen a relatively high frequency vibration by the mechanical damper and also removes vibration (damping) by the actuator. be able to. Therefore, each vibration isolation device 48 can avoid transmission of relatively high-frequency vibration between the support frame 46 and the unit main body 42.
- a mechanical damper such as an air damper or a hydraulic damper
- the mark detection system MDS is not limited to the FIA system.
- the target mark is irradiated with coherent detection light, and two diffracted lights (for example, diffracted light of the same order or diffracted in the same direction) generated from the target mark.
- a diffracted light interference type alignment detection system that detects and outputs a detection signal by interference may be used in place of the FIA system.
- a diffracted light interference type alignment system may be used together with the FIA system to detect two target marks simultaneously.
- a beam scan type alignment system that scans measurement light in a predetermined direction with respect to a target mark while the slider 10 is moved in a predetermined direction may be used.
- the mark detection system MDS has an alignment autofocus function, but instead of this, or in addition to this, the measurement unit 40 includes a focus position detection system such as the United States.
- a focus position detection system such as the United States.
- An oblique incidence type multi-point focal position detection system having the same configuration as that disclosed in Japanese Patent No. 5,448,332 may be provided.
- the first position measurement system 30 has a head portion 32 that is disposed in a recess formed on the upper surface of the surface plate 12 and fixed to the surface plate 12.
- the upper surface of the head portion 32 faces the lower surface of the slider 10 (the surface on which the grating RG1 is formed).
- a predetermined clearance for example, a clearance of about several mm is formed between the upper surface of the head portion 32 and the lower surface of the slider 10.
- the first position measurement system 30 includes an encoder system 33 and a laser interferometer system 35 as shown in FIG.
- the encoder system 33 emits a plurality of beams from the head unit 32 to the measurement unit (formation surface of the grating RG1) on the lower surface of the slider 10, and also returns a plurality of return beams (for example, the grating RG1) from the measurement unit on the lower surface of the slider 10. Position information of the slider 10 can be acquired.
- the encoder system 33 includes an X linear encoder 33x that measures the position of the slider 10 in the X-axis direction, and a pair of Y linear encoders 33ya and 33yb that measure the position of the slider 10 in the Y-axis direction.
- an encoder head disclosed in US Pat. No. 7,238,931 and US Patent Application Publication No. 2007 / 288,121 (hereinafter abbreviated as a head as appropriate).
- a diffraction interference type head having the same configuration is used.
- the head includes a light source, a light receiving system (including a photodetector), and an optical system.
- at least the optical system of the head faces the grating RG1, and the inside of the casing of the head unit 32.
- at least one of the light source and the light receiving system may be disposed outside the casing of the head portion 32.
- FIG. 4A shows the head portion 32 in a perspective view
- FIG. 4B shows a plan view of the top surface of the head portion 32 as viewed from the + Z direction.
- the encoder system 33 measures the position of the slider 10 in the X-axis direction with one X head 37x, and measures the position in the Y-axis direction with a pair of Y heads 37ya and 37yb (see FIG. 4B). That is, the X head 37x that measures the position of the slider 10 in the X-axis direction using the X diffraction grating of the grating RG1 constitutes the X linear encoder 33x, and the Y diffraction grating of the grating RG1 uses the Y diffraction grating of the slider 10.
- a pair of Y linear encoders 33ya and 33yb is configured by the pair of Y heads 37ya and 37yb that measure the position in the axial direction.
- the X head 37x is parallel to the Y axis passing through the center of the head portion 32 on a straight line LX parallel to the X axis passing through the center of the head portion 32.
- Measurement beams LBx 1 and LBx 2 (shown by solid lines in FIG. 4A) from two points equidistant from the straight line CL (see the white circles in FIG. 4B) on the grating RG1 Irradiate the same irradiation point.
- the irradiation points of the measurement beams LBx 1 and LBx 2 that is, the detection points of the X head 37 x (see reference numeral DP in FIG. 4B) are positioned at the detection center of the mark detection system MDS in the X axis direction and the Y axis direction. Match.
- the measurement beams LBx 1 and LBx 2 are obtained by polarization-separating the beam from the light source by a polarization beam splitter (not shown).
- a polarization beam splitter not shown
- these measurement beams are measured.
- a predetermined order for example, a first-order diffracted beam (first diffracted beam) diffracted by the X diffraction gratings of the beams LBx 1 and LBx 2 is folded by a reflecting mirror via a lens and a quarter-wave plate (not shown), respectively.
- the polarization direction After passing through the quarter-wave plate twice, the polarization direction is rotated by 90 degrees, re-enters the polarization beam splitter through the original optical path, and is coaxially synthesized, then the measurement beams LBx 1 , LBx
- the interference light between the two first-order diffracted beams is received by a photodetector (not shown), whereby the position of the slider 10 in the X-axis direction is measured.
- the pair of Y heads 37ya and 37yb are disposed on the + X side and the ⁇ X side of the straight line CL.
- the Y head 37ya is arranged on the grating RG1 from two points (see the white circles in FIG. 4B) having the same distance from the straight line LX on the straight line Lya.
- Measurement beams LBya 1 and LBya 2 indicated by broken lines in FIG. 4A, respectively.
- the irradiation points of the measurement beams LBya 1 and LBya 2 that is, the detection points of the Y head 37 ya are indicated by reference sign DPya in FIG.
- Y head 37yb is, about the line CL, measurement beams LBya 1, LBya two symmetrical points to the injection point of the two Y heads 37ya (see open circles in FIG. 4 (B)), the measuring beam LByb 1, LByb 2, grating Irradiate a common irradiation point DPyb on RG1.
- the detection points DPya and DPyb of the Y heads 37ya and 37yb are arranged on a straight line LX parallel to the X axis.
- the measurement beams LBya 1 and LBya 2 are also the same beam that has been polarized and separated by the polarization beam splitter.
- the measurement beams LBya 1 and LBya 2 have a predetermined order, for example, a first-order diffraction beam (second diffraction beam) by the Y diffraction grating.
- the interference light between the beams) is photoelectrically detected by a photodetector (not shown) in the same manner as described above, whereby the position of the slider 10 in the Y-axis direction is measured.
- the control device 60 determines the position of the slider 10 in the Y-axis direction based on the average of the measurement values of the two Y heads 37ya and 37yb. Therefore, in the present embodiment, the position of the slider 10 in the Y-axis direction is measured using the midpoint DP of the detection points DPya and DPyb as a substantial measurement point.
- the midpoint DP coincides with the irradiation point on the grating RG1 of the measurement beams LBx 1 and LBX 2 .
- this detection point is a position in the XY plane at the detection center of the mark detection system MDS.
- the control device 60 uses the encoder system 33 to measure position information of the slider 10 in the XY plane when measuring the alignment mark on the wafer W placed on the slider 10.
- control device 60 measures the amount of rotation of the slider 10 in the ⁇ z direction based on the difference between the measurement values of the pair of Y heads 37ya and 37yb.
- the laser interferometer 35 causes a length measurement beam to be incident on the measurement unit (the surface on which the grating RG1 is formed) on the lower surface of the slider 10, and the return beam (for example, reflected light from the surface on which the grating RG1 is formed).
- the position information of the slider 10 can be acquired by receiving light.
- the laser interferometer system 35 transmits four length measuring beams LBz 1 , LBz 2 , LBz 3 , LBz 4 to the lower surface of the slider 10 (surface on which the grating RG1 is formed).
- the laser interferometer system 35 includes laser interferometers 35a to 35d (see FIG. 6) that irradiate these four measurement beams LBz 1 , LBz 2 , LBz 3 , and LBz 4 .
- four Z heads are constituted by the laser interferometers 35a to 35d.
- the four length measuring beams LBz 1 , LBz 2 , LBz 3 , LBz 4 are centered on the detection point DP, Injected in parallel to the Z axis from four points corresponding to the vertices of a square having two sides parallel to the X axis and two sides parallel to the Y axis.
- the emission points (irradiation points) of the measurement beams LBz 1 and LBz 4 are equidistant from the straight line LX on the straight line LYa, and the emission points (irradiation points) of the remaining measurement beam LBz 2 and LBz 3 are It is equidistant from the straight line LX on the straight line LYb.
- the surface on which the grating RG ⁇ b> 1 is formed also serves as a reflection surface for each measurement beam from the laser interferometer system 35.
- the control device 60 uses the laser interferometer system 35 to measure information on the position of the slider 10 in the Z-axis direction, the rotation amount in the ⁇ x direction, and the ⁇ y direction.
- the slider 10 is not actively driven by the drive system 20 described above with respect to the surface plate 12 in each of the Z axis, ⁇ x, and ⁇ y directions. Since the four air bearings 18 arranged at the four corners of the bottom are instructed to float on the surface plate 12, in actuality, the slider 10 moves on the surface plate 12 in the Z axis, ⁇ x and ⁇ y directions. The position changes. That is, the slider 10 is actually movable with respect to the surface plate 12 with respect to the Z-axis, ⁇ x, and ⁇ y directions. In particular, the displacement of the slider 10 in each direction of ⁇ x and ⁇ y causes a measurement error (Abbe error) of the encoder system 33. Considering this point, the first position measurement system 30 (laser interferometer system 35) measures the position information of the slider 10 in the Z-axis, ⁇ x, and ⁇ y directions.
- the first position measurement system 30 laser interferometer system 35
- the beam can be incident on three different points on the surface on which the grating RG1 is formed.
- a protective glass for protecting the grating RG1 is provided on the lower surface of the slider 10, and each measuring beam from the encoder system 33 is transmitted through the surface of the protective glass, and each measuring beam from the laser interferometer system 35 is transmitted.
- a wavelength selective filter for blocking may be provided.
- the control device 60 can measure the position of the slider 10 in the direction of six degrees of freedom by using the encoder system 33 and the laser interferometer system 35 of the first position measurement system 30.
- the encoder system 33 since the optical path length of the measurement beam in the air is extremely short and almost equal, the influence of the air fluctuation can be almost ignored. Therefore, the encoder system 33 can measure the positional information of the slider 10 in the XY plane (including the ⁇ z direction) with high accuracy.
- the detection points on the grating RG1 in the X-axis direction and the Y-axis direction by the encoder system 33 and the detection points on the lower surface of the slider 10 in the Z-axis direction by the laser interferometer system 35 are the mark detection system MDS. Therefore, the occurrence of a so-called Abbe error due to a shift in the XY plane between the detection point and the detection center of the mark detection system MDS is suppressed to a level that can be substantially ignored. Therefore, by using the first position measurement system 30, the control device 60 uses the X-axis direction of the slider 10 in the X-axis direction without any Abbe error caused by a shift in the XY plane between the detection point and the detection center of the mark detection system MDS. The position in the axial direction and the Z-axis direction can be measured with high accuracy.
- the position information in the XY plane of the slider 10 is not measured by the encoder system 33 at the position of the surface of the wafer W.
- the Z positions of the arrangement surface of the grating RG1 and the surface of the wafer W do not coincide with each other. Therefore, when the grating RG1 (that is, the slider 10) is inclined with respect to the XY plane, positioning the slider 10 based on the measurement values of the encoders of the encoder system 33 results in the arrangement surface of the grating RG1.
- a positioning error (a kind of Abbe error) corresponding to the inclination with respect to the plane occurs.
- this positioning error position control error
- this positioning error can be obtained by a simple calculation using the difference ⁇ Z, the pitching amount ⁇ x, and the rolling amount ⁇ y, and this is used as an offset, and the encoder system 33 ( By positioning the slider 10 on the basis of the corrected position information obtained by correcting the measured values of the encoders, the influence of the above-mentioned kind of Abbe error is eliminated.
- one or more information for moving the slider such as a target position where the slider 10 should be positioned is corrected based on the offset. You may do it.
- the head unit 32 When the grating RG1 (that is, the slider 10) is tilted with respect to the XY plane, the head unit 32 may be moved so that a positioning error due to the tilt does not occur. That is, when it is measured by the first position measurement system 30 (for example, the interferometer system 35) that the grating RG1 (that is, the slider 10) is inclined with respect to the XY plane, the first position measurement system 30 is used.
- the surface plate 12 holding the head unit 32 may be moved based on the position information acquired by using.
- the surface plate 12 can be moved using the vibration isolator 14 as described above.
- the position information of the mark acquired using the mark detection system MDS is corrected based on the positioning error caused by the inclination. Also good.
- the second position measurement system 50 is provided on the lower surface of one end and the other end of the head mounting member 51 in the longitudinal direction.
- the upper surfaces of the scale members 54A and 54B are flush with the surface of the wafer W held by the wafer holder WH.
- Reflective two-dimensional gratings RG2a and RG2b are formed on the upper surfaces of the scale members 54A and 54B, respectively.
- Two-dimensional gratings (hereinafter abbreviated as gratings) RG2a and RG2b are both a reflection type diffraction grating (X diffraction grating) having a periodic direction in the X axis direction and a reflection type diffraction grating having a periodic direction in the Y axis direction (X Y diffraction grating).
- the pitch of the grating lines of the X diffraction grating and the Y diffraction grating is set to 1 ⁇ m, for example.
- the scale members 54A and 54B are made of a material having a low coefficient of thermal expansion, for example, the above-described zero-expansion material, and as shown in FIGS. 2 (A) and 2 (B), the surface plate 12 is interposed via the support member 56, respectively. It is fixed on the top.
- the dimensions of the scale members 54A and 54B and the support member 56 are determined so that the gratings RG2a and RG2b and the head portions 52A and 52B face each other with a gap of about several mm.
- one head portion 52A fixed to the lower surface of the + X side end portion of the head mounting member 51 measures the X-axis and Z-axis directions housed in the same housing. including the XZ head 58X 1 to a direction, and a YZ head 58Y 1 whose measurement direction in the Y-axis and Z-axis directions.
- XZ head 58X 1 (more precisely, the irradiation point on grating RG2a of the measurement beam emitted by XZ head 58X 1 ) and YZ head 58Y 1 (more precisely, the two-dimensional grating of the measurement beam emitted by YZ head 58Y 1) (Irradiation point on RG2a) is arranged on a straight line parallel to the same Y axis.
- the other head section 52B is arranged symmetrically with the head section 52A with respect to a straight line (hereinafter referred to as a reference axis) LV parallel to the Y axis passing through the optical axis AX1 of the mark detection system MDS, but is the same as the head section 52A. It is configured.
- the head portion 52B has an XZ head 58X 2, YZ heads 58Y 2 arranged in XZ head 58X 1, YZ head 58Y 1 and symmetrically with respect to reference axis LV, the XZ head 58X 2, YZ heads 58Y 2
- the irradiation point of the measurement beam irradiated on the grating RG2b from each is set on a straight line parallel to the same Y axis.
- the reference axis LV coincides with the straight line CL described above.
- each of the XZ heads 58X 1 and 58X 2 and the YZ heads 58Y 1 and 58Y 2 for example, an encoder head having the same configuration as the displacement measuring sensor head disclosed in US Pat. No. 7,561,280 is used. be able to.
- the head portions 52A and 52B use scale members 54A and 54B, respectively, to measure the X-axis direction position (X position) and Z-axis direction position (Z position) of the gratings RG2a and RG2b, and Y
- a YZ linear encoder that measures an axial position (Y position) and a Z position is configured.
- the gratings RG2a and RG2b are formed on the upper surfaces of the scale members 54A and 54B fixed on the surface plate 12 via the support members 56, respectively, and the head portions 52A and 52B are integrated with the mark detection system MDS.
- the head mounting member 51 is provided.
- the head units 52A and 52B measure the position of the surface plate 12 with respect to the mark detection system MDS (the positional relationship between the mark detection system MDS and the surface plate 12).
- the XZ linear encoder and the YZ linear encoder are denoted by the same reference numerals as the XZ heads 58X 1 and 58X 2 and the YZ heads 58Y 1 and 58Y 2 , respectively, and the XZ linear encoders 58X 1 , 58X 2 and YZ linear The encoders 58Y 1 and 58Y 2 are described (see FIG. 6).
- the XZ linear encoder 58X 1 and the YZ linear encoder 58Y 1 are used to measure position information regarding the X axis, Y axis, Z axis, and ⁇ x directions with respect to the mark detection system MDS of the surface plate 12.
- encoder 58 1 is constituted (see Fig. 6).
- X-axis with respect to the mark detection system MDS of the surface plate 12 Y-axis, Z-axis, and four-axis encoder 58 which measures the positional information about each direction of ⁇ x 2 is configured (see FIG. 6).
- the position information about the ⁇ y direction of the surface plate 12 with respect to the mark detection system MDS is obtained.
- the ⁇ z direction of the surface plate 12 with respect to the mark detection system MDS is obtained (measured) based on the positional information regarding the Y axis direction with respect to the mark detection system MDS of the surface plate 12 measured by the 4-axis encoders 58 1 and 58 2.
- the position information about is determined (measured).
- a second position measurement system 50 that measures position information is configured.
- Information on the relative position between the mark detection system MDS and the surface plate 12 measured by the second position measurement system 50 in the six degrees of freedom direction is constantly supplied to the control device 60, and the control device 60 determines the relative position.
- the detection point of the first position measurement system 30 is set so that the detection point of the first position measurement system 30 has a desired positional relationship with respect to the detection center of the mark detection system MDS based on the information.
- the three vibration isolations so that the detection center of the mark detection system MDS and the position in the XY plane coincide with each other at the nm level, for example, and the surface of the wafer W on the slider 10 coincides with the detection position of the mark detection system MDS.
- the actuator of the device 14 is controlled in real time. At this time, for example, the straight line CL described above coincides with the reference axis LV. If the detection point of the first position measurement system 30 can be controlled so as to have a desired positional relationship with respect to the detection center of the mark detection system MDS, the second position measurement system 50 has six degrees of freedom. It is not necessary to measure relative position information in all directions.
- FIG. 6 is a block diagram showing the input / output relationship of the control device 60 that mainly constitutes the control system of the measuring device 100 according to the present embodiment.
- the control device 60 includes a workstation (or a microcomputer) and the like, and comprehensively controls each component of the measurement device 100.
- the measuring apparatus 100 includes a wafer transfer system 70 disposed in the chamber together with the components shown in FIG.
- the wafer transfer system 70 is composed of, for example, a horizontal articulated robot.
- a region (hereinafter referred to as a shot) is formed in a matrix arrangement, and a plurality of types of marks, for example, are provided on a street line surrounding each shot or a street line within each shot (in the case of taking one shot with multiple chips).
- search mark search alignment
- wafer alignment mark wafer alignment mark
- the plurality of types of marks are formed together with the partition area.
- two-dimensional marks are used as search marks and wafer marks.
- the measuring apparatus 100 can set a plurality of measurement modes having different mark detection conditions by the mark detection system MDS.
- a plurality of measurement modes an A mode for detecting one wafer mark for all shots for all wafers, and a plurality of wafer marks for all shots for the first predetermined number of wafers in a lot.
- the detection result of the wafer mark for the remaining wafers in the lot, it is possible to determine a wafer mark to be detected for each shot and set the B mode for detecting the determined wafer mark. To do.
- information necessary for alignment measurement on the wafer W is input in advance through an input device (not shown) by the operator of the measurement device 100 and stored in the memory of the control device 60.
- information necessary for alignment measurement includes various information such as wafer W thickness information, wafer holder WH flatness information, shot area on the wafer W, and alignment mark arrangement design information.
- the measurement mode setting information is input in advance by an operator via an input device (not shown), for example.
- the processing algorithm corresponding to the flowchart of FIG. 7 starts when, for example, an operator instructs the start of measurement. At this time, it is assumed that one lot of wafers is stored in a wafer carrier at a predetermined position.
- a substrate processing apparatus for example, a coater / developer
- permission to start conveyance of one lot of wafers from the control system of the substrate processing apparatus for example. It may be started when there is a request and in response to the request, the first wafer is loaded into a predetermined delivery position.
- in-line connection means that different apparatuses are connected in a state where wafer (substrate) transport paths are connected. In this specification, in this sense, “in-line connection”
- connection or “inline connection” is used.
- step S102 the count value i of the counter indicating the number of the wafer in the lot is initialized to 1 (i ⁇ 1).
- the wafer W is loaded onto the slider 10.
- the loading of the wafer W is performed by the wafer transfer system 70 and the vertically moving member on the slider 10 under the control of the control device 60. Specifically, the wafer W is transferred from the wafer carrier (or delivery position) to the upper side of the slider 10 at the loading position by the wafer transfer system 70, and the vertical movement member is driven up by a predetermined amount by the driving device 13. Wafer W is transferred to the vertically moving member. After the wafer transfer system 70 is retracted from above the slider 10, the vertical movement member is driven downward by the driving device 13, so that the wafer W is placed on the wafer holder WH on the slider 10.
- the vacuum pump 11 is turned on, and the wafer W loaded on the slider 10 is vacuum-sucked by the wafer holder WH.
- the measuring apparatus 100 is connected to the substrate processing apparatus in-line, wafers are sequentially loaded from the wafer transfer system on the substrate processing apparatus side and placed at the delivery position.
- the position (Z position) of the wafer W in the Z-axis direction is adjusted.
- the control device 60 Prior to the adjustment of the Z position, the control device 60 obtains relative position information about the Z axis direction, the ⁇ y direction, and the ⁇ x direction between the mark detection system MDS and the surface plate 12 measured by the second position measurement system 50. Based on this, the internal pressures of the air mounts of the three vibration isolation devices 14 (the driving force in the Z-axis direction generated by the vibration isolation device 14) are controlled, and the upper surface of the surface plate 12 is parallel to the XY plane.
- the position is set to be a predetermined reference position.
- the wafer W is considered to have a uniform thickness.
- step S106 the control device 60 sets the surface of the wafer W within a range in which the focal position of the optical system can be adjusted by the autofocus function by the mark detection system MDS based on the thickness information of the wafer W in the memory.
- the driving force in the Z-axis direction generated by the three vibration isolation devices 14, for example, the internal pressure (amount of compressed air) of the air mount is adjusted, and the surface plate 12 is driven in the Z-axis direction. Adjust the Z position.
- the control device 60 may adjust the Z position of the wafer surface based on the detection result (output) of the focal position detection system.
- the mark detection system MDS may include a focal position detection system that detects the position of the surface of the wafer W in the Z-axis direction via an optical element (objective optical element) at the tip. Further, the adjustment of the Z position of the surface of the wafer W based on the detection result of the focal position detection system can be performed by moving the surface plate 12 using the vibration isolation device 14 and moving the slider 10 together with the surface plate 12. .
- the slider 10 adopts a drive system 20 that can be driven not only in the XY plane but also in the Z-axis direction, the ⁇ x direction, and the ⁇ y direction, and the slider 10 is moved by using the drive system 20. Also good.
- the Z position adjustment on the wafer surface may include the tilt adjustment on the wafer surface.
- search alignment of the wafer W is performed. Specifically, for example, at least two search marks positioned in the peripheral portion substantially symmetrically with respect to the center of the wafer W are detected using the mark detection system MDS.
- the control device 60 controls the driving of the slider 10 by the driving system 20 to position each search mark in the detection area (detection field of view) of the mark detection system MDS, while measuring information from the first position measurement system 30 and The measurement information obtained by the second position measurement system 50 is acquired, and the detection signal when the search mark formed on the wafer W is detected using the mark detection system MDS, and the measurement information (and the second information obtained by the first position measurement system 30). Position information of each search mark is obtained based on the measurement information by the position measurement system 50).
- control device 60 detects the detection result of the mark detection system MDS output from the signal processing device 49 (the detection center (index center) of the mark detection system MDS obtained from the detection signal) and the relative position of each search mark. Relationship) and the measurement values of the first position measurement system 30 and the measurement values of the second position measurement system 50 when each search mark is detected, the position coordinates of the two search marks on the reference coordinate system are obtained.
- the reference coordinate system is an orthogonal coordinate system defined by the length measurement axis of the first position measurement system 30.
- the residual rotation error of the wafer W is calculated from the position coordinates of the two search marks, and the slider 10 is slightly rotated so that the rotation error becomes substantially zero. Thereby, the search alignment of the wafer W is completed. Since the wafer W is actually loaded onto the slider 10 in a pre-aligned state, the center position deviation of the wafer W is negligibly small and the residual rotation error is very small.
- step S110 it is determined whether or not the set measurement mode is the A mode. If the determination in step S110 is affirmative, that is, if the A mode is set, the process proceeds to step S112.
- step S112 one wafer mark is measured for each of 98 shots, that is, alignment measurement for all wafers (all shot one-point measurement, in other words, all shot EGA measurement).
- the control device 60 determines the position coordinates of the wafer mark on the wafer W on the reference coordinate system, that is, the shot position coordinates, in the same manner as the measurement of the position coordinates of each search mark during the search alignment described above. Ask for.
- the measurement information of the second position measurement system 50 is always used when calculating the position coordinates of the shot.
- the detection point of the first position measurement system 30 is within the XY plane and the detection center of the mark detection system MDS based on the measurement information of the second position measurement system 50 by the control device 60.
- the actuators of the three vibration isolation devices 14 are controlled in real time so that the positions coincide at the nm level, for example, and the surface of the wafer W on the slider 10 coincides with the detection position of the mark detection system MDS.
- the detection point of the first position measurement system 30 matches the detection center of the mark detection system MDS and the position in the XY plane, for example, at the nm level.
- the position coordinates of the calculated wafer mark on the wafer W on the reference coordinate system are corrected by correcting the detection result of the mark detection system MDS or the measurement value of the first position measurement system 30 using the offset. can do.
- the control device 60 moves the slider 10 (wafer W) in at least one of the X-axis direction and the Y-axis direction via the drive system 20 to move the wafer mark, Position in the detection area of the mark detection system MDS. That is, the slider 10 is moved in the XY plane with respect to the mark detection system MDS by the step-and-repeat method, and one point measurement for all shots is performed.
- control device 60 determines the Z position on the wafer surface based on the detection result (output) of the focal position detection system, as described in step S106. May be adjusted.
- an offset load acts on the surface plate 12 along with the movement.
- the control device 60 feeds and forwards the three vibration isolators 14 individually so that the influence of the offset load is canceled according to the X and Y coordinate positions of the slider included in the measurement information of the first position measurement system 30. And the driving force in the Z-axis direction generated by each vibration isolator 14 is individually controlled. Note that the control device 60 predicts the offset load acting on the surface plate 12 based on the information of the known movement path of the slider 10 without using the measurement information of the first position measurement system 30, and the influence of the offset load.
- the three anti-vibration devices 14 may be individually feed-forward controlled so as to cancel out.
- information on the unevenness of the wafer holding surface of the wafer holder WH (the surface defined by the upper end surfaces of the many pins of the pin chuck) (hereinafter referred to as holder flatness information) is obtained in advance through experiments or the like. Therefore, when moving the slider 10 during alignment measurement (for example, one point measurement for all shots), the control device 60 includes the wafer mark to be measured on the surface of the wafer W based on the holder flatness information.
- the Z position of the surface plate 12 is finely adjusted by feed-forward control of the three vibration isolation devices 14 so that the region is quickly positioned within the focal depth range of the optical system of the mark detection system MDS. Note that either or both of the feed forward control and the feed forward control based on the holder flatness information for canceling the influence of the offset load acting on the surface plate 12 described above may not be executed.
- step S108 may be omitted.
- step S112 the actual measurement value of the position coordinate of the sample shot area (sample shot) in the reference coordinate system used in the EGA calculation described later is detected.
- the sample shot refers to a specific plurality of (at least three) shots that are predetermined for use in EGA calculation, which will be described later, among all shots on the wafer W.
- all shots on the wafer W are sample shots.
- step S110 determines whether or not the natural number is smaller than a predetermined number (for example, 4).
- a predetermined number for example, 4
- the count value i is incremented in step S128 described later. If the determination in step S114 is affirmed, the process moves to step S120, and all-shot multipoint measurement is performed.
- all shot multipoint measurement means that a plurality of wafer marks are measured for all shots on the wafer W. A plurality of wafer marks to be measured are determined in advance.
- step S120 a plurality of wafer marks arranged so that the shot shape (shape error from the ideal lattice) can be obtained by statistical calculation may be measured.
- the measurement procedure is the same as that in the case of measuring all the shots at one point in step S112 except that the number of marks to be measured is different, and detailed description thereof will be omitted.
- step S114 determines whether the count value i is smaller than K + 1.
- a difference absolute value
- step S118 it is determined whether to detect a plurality of wafer marks or to detect one wafer mark.
- the wafer mark to be detected is determined such that the wafer mark having the maximum difference (absolute value) between the actually measured position and the design position is included.
- step S122 the wafer mark to be measured determined for each shot in step S118 is measured.
- the measurement procedure is the same as that in the case of measuring all the shots at one point in step S112 except that the number of marks to be measured is different, and detailed description thereof will be omitted.
- step S124 the process proceeds to step S124.
- all shot multipoint measurement is performed on the first to (K-1) th wafers (for example, the third wafer) in the lot.
- K-1 for example, three
- EGA calculation is performed using the wafer mark position information measured in any one of steps S112, S120, and S122.
- EGA calculation is a shot that uses statistical calculation such as least squares based on the difference between the design value of the position coordinate of the sample shot and the actual measurement value after measurement of the wafer mark (EGA measurement) described above. Means a statistical calculation for obtaining a coefficient of a model expression expressing the relationship between the position coordinates of the shot and the correction amount of the position coordinates of the shot.
- the following model formula is used to calculate the correction amount from the design value of the shot position coordinates.
- dx and dy are correction amounts in the X-axis direction and Y-axis direction from the design values of the shot position coordinates
- X and Y are shot designs in the wafer coordinate system with the center of the wafer W as the origin.
- Upper position coordinates that is, the above equation (1) is a polynomial related to the design position coordinates X and Y of each shot in the wafer coordinate system with the wafer center as the origin, and the position coordinates X and Y and the position coordinates of the shot are
- This is a model expression that expresses the relationship between correction amounts (alignment correction components) dx and dy.
- the reference coordinate system and the wafer coordinate system are not particularly distinguished from each other in the following. It is assumed that
- the correction amount of the position coordinates of the shot can be obtained from the position coordinates X and Y of the shot of the wafer W.
- the coefficients a 0 , a 1 , ..., b 0 , b 1 , ... are obtained.
- the model formula (1) after the coefficient determination is used to design each shot (partition area) in the wafer coordinate system.
- the position coordinates X and Y and obtaining the correction amounts dx and dy of the position coordinates of each shot a true array of a plurality of shots (partition areas) on the wafer W (if only linear components are used as deformation components) (Including non-linear components).
- the waveform of the detection signal obtained as a measurement result is not necessarily good for all the wafer marks due to the influence of the process so far.
- the position error of the wafer mark with a bad measurement result is expressed by coefficients a 0 and a 1 ,..., B 0 , b 1 ,.
- the signal processing device 49 sends only the measurement result of the wafer mark having a good measurement result to the control device 60, and the control device 60 uses the positions of all the wafer marks that have received the measurement result.
- the above-described EGA calculation is executed.
- the control device 60 creates the alignment history data file by associating the result of the EGA calculation with the information related to the mark used for the calculation and the wafer identification information (for example, the wafer number and the lot number). Stored in the storage device.
- step S124 the process proceeds to step S126, where the wafer W is unloaded from the slider 10.
- This unloading is performed by the wafer transfer system 70 and the vertically moving member on the slider 10 in a procedure reverse to the loading procedure in step S104 under the control of the control device 60.
- step S1208 after the count value i of the counter is incremented by 1 (i ⁇ i + 1), the process proceeds to step S130 to determine whether the count value i is larger than the total number I of wafers in the lot. If the determination in step S130 is negative, it is determined that the processing for all the wafers in the lot has not been completed, the process returns to step S104, and thereafter, until the determination in step S130 is affirmed. The processing from S104 to S130 (including judgment) is repeated.
- step S130 If the determination in step S130 is affirmative, it is determined that processing has been completed for all wafers in the lot, and the series of processing of this routine is terminated.
- the position information in the six degrees of freedom direction of the slider 10 on which the wafer W is placed and held is obtained. Since the first position measurement system 30 to measure at least the wafer mark on the wafer W is detected by the mark detection system MDS, the measurement beam is continuously irradiated from the head unit 32 to the grating RG1 in the range in which the slider 10 moves. Can do. Therefore, the first position measurement system 30 can continuously measure the position information in the entire range in the XY plane in which the slider 10 moves for mark detection.
- the absolute coordinate position of the slider 10 can be acquired in the XY plane, and the position information of the slider 10 and the mark detection measured by the first position measurement system 30 are eventually obtained.
- a mark on the wafer W held on the slider 10 obtained from the detection result of the system MDS (including not only the search mark and the wafer mark but also other marks such as an overlay measurement mark (registration mark))
- the absolute position in the XY plane can be obtained.
- “absolute position coordinates” means position coordinates on the reference coordinate system.
- the position coordinates in the XY plane of the mark on the wafer can be measured.
- an exposure apparatus such as a scanner or a stepper
- a product reticle on which an alignment mark with a known positional relationship is formed the bare wafer is exposed by the step-and-scan method or the step-and-repeat method, and the alignment mark on the wafer after the exposure is performed.
- wafer grid variations for example, variations from the designed wafer grid
- the management of wafer grid fluctuations caused by the apparatus will be described in detail later.
- the control device 60 uses the first position measurement system 30 and the second position measurement system 50 while controlling the movement of the slider 10 by the drive system 20.
- the position information of the slider 10 with respect to the board 12 and the relative position information between the mark detection system MDS and the surface plate 12 are acquired, and the position information of a plurality of marks formed on the wafer W using the mark detection system MDS is obtained. Seeking. Therefore, according to the measuring apparatus 100, position information of a plurality of marks formed on the wafer W can be obtained with high accuracy.
- the control apparatus 60 always acquires measurement information (relative position information between the surface plate 12 and the mark detection system MDS) by the second position measurement system 50, and marks
- the positional relationship between the detection center of the detection system MDS and the measurement point of the first position measurement system that detects positional information of the slider 10 with respect to the surface plate 12 in the direction of 6 degrees of freedom is maintained at a desired relationship at the nm level.
- the position of the surface plate 12 in the direction of 6 degrees of freedom is controlled in real time via the three vibration isolation devices 14 (actuators thereof).
- control device 60 controls the driving of the slider 10 by the driving system 20, while measuring information by the first position measuring system 30 (position information of the slider 10 with respect to the surface plate 12) and measuring information by the second position measuring system 50. (Relative position information between the surface plate 12 and the mark detection system MDS) is acquired, and the detection signal when the mark formed on the wafer W is detected using the mark detection system MDS and the mark detection system MDS are used. Measurement information obtained by the first position measurement system 30 obtained when the mark formed on the wafer W is detected, and a second position measurement system obtained when the mark formed on the wafer W is detected using the mark detection system MDS. Based on the measurement information by 50, position information of a plurality of wafer marks is obtained. Therefore, according to the measuring apparatus 100, position information of a plurality of marks formed on the wafer W can be obtained with high accuracy.
- the position control of the wafer W (wafer stage WST), which will be described later, is performed based on the measured mark position information without performing the EGA calculation using the measured mark position information.
- measurement information obtained by the second position measurement system 50 may not be used for calculation of mark position information.
- the measurement information obtained by the second position measurement system 50 obtained when the mark formed on the wafer W is detected by using the mark detection system MDS is used by offsetting, for example, the wafer W (wafer stage).
- Information for moving the wafer W such as a positioning target value (WST) may be corrected.
- the movement of a reticle R (reticle stage RST) to be described later at the time of exposure may be controlled in consideration of the offset.
- the measurement apparatus 100 at the time of alignment measurement, position information of at least one wafer mark is measured for each of I (for example, 98) shots on the wafer W, and this position information is measured. , And the coefficients a 0 , a 1 ,..., B 0 , b 1 ,. Accordingly, the deformation component of the wafer grid can be accurately obtained not only for the linear component but also for the nonlinear component.
- the correction amount (coefficients a 0 , a 1 ,..., B 0 , b 1 ,. It is considered that it is used for alignment of the wafer with respect to the exposure position at the time of exposure.
- the wafer W needs to be unloaded from the slider 10 and then loaded onto the wafer stage of the exposure apparatus. There is. Even if wafer holders WH on the slider 10 and wafer holders on the wafer stage of the exposure apparatus use the same type of wafer holder, the holding state of the wafer W differs depending on individual differences of the wafer holders.
- the measurement apparatus 100 calculates the correction amount of the position coordinate of the shot of the wafer W (coefficients a 0 , a 1 ,..., B 0 , b 1 ,. All of the coefficients a 0 , a 1 ,..., B 0 , b 1 ,.
- the wafer W is held differently for each wafer holder, which is affected by the first-order or lower-order component (linear component) of the correction amount of the shot position coordinates, and the second-order or higher-order component is It is thought that it is hardly affected.
- the second-order or higher-order components are considered to be components mainly caused by deformation of the wafer W caused by the process, and are considered to be components unrelated to the wafer holding state by the wafer holder. This is because there is no problem.
- the higher-order component coefficients a 3 , a 4 ,..., A 9 ,..., And b 3 , b 4 ,. b 9 ,... can be used as they are as coefficients of higher-order components of the correction amount of the position coordinates of the wafer W in the exposure apparatus. Therefore, it is only necessary to perform simple EGA measurement (for example, measurement of about 3 to 16 wafer marks) for obtaining a linear component of the correction amount of the position coordinate of the wafer W on the wafer stage of the exposure apparatus. Since the measurement apparatus 100 is an apparatus different from the exposure apparatus, it is possible to obtain position information of more marks on the substrate without causing a reduction in throughput in the substrate exposure process.
- the measurement apparatus 100 performs alignment measurement on another wafer in parallel with the wafer processing by the exposure apparatus including the simple EGA measurement and exposure described above by the exposure apparatus, the throughput of the wafer processing is almost reduced. Efficient processing without reduction is possible.
- either the A mode or the B mode is set as the measurement mode.
- the present invention is not limited to this, and all shots on all wafers in the lot are used.
- C mode for detecting a first number of wafer marks of 2 or more, and for all wafers in a lot, for some shots, for example, predetermined shots located at the periphery of the wafer, 2 or more
- a mode of detecting two wafer marks and detecting each one wafer mark (referred to as D mode) may be provided for the remaining shots.
- an E mode for selecting one of the A mode, the C mode, and the D mode is provided for the remaining wafers in the lot in accordance with the detection result of the wafer mark for the first predetermined number of wafers in the lot. Also good.
- one or more wafer marks of some shots for all wafers in a lot, one or more wafer marks of some shots, for example, 90% or 80% of the number of shots, As for the shot located at, one or more wafer marks of shots spaced by one may be measured.
- the gratings RG1, RG2a, and RG2b have been described with respect to the case where the X-axis direction and the Y-axis direction are the periodic directions, but the present invention is not limited thereto, and the first position measurement system 30 and the second position measurement are performed.
- the grating portions (two-dimensional gratings) included in each of the systems 50 may have two directions intersecting each other in the XY plane as periodic directions.
- the configuration of the head portion 32 of the first position measurement system 30 described in the above embodiment, the arrangement of detection points, and the like are merely examples.
- the position of the detection point of the mark detection system MDS and the detection center of the head unit 32 may not coincide with each other in at least one of the X-axis direction and the Y-axis direction.
- the arrangement of the head portion of the first measurement system 30 and the grating RG1 (lattice portion) may be reversed. That is, the slider 10 may be provided with a head portion, and the surface plate 12 may be provided with a lattice portion.
- the first position measurement system 30 does not necessarily include the encoder system 33 and the laser interferometer system 35, and the first position measurement system 30 may be configured only by the encoder system.
- the encoder system irradiates the grating RG1 of the slider 10 from the head portion, receives the return beam (diffracted beam) from the grating, and measures the position information of the slider 10 with respect to the surface plate 12 in the six degrees of freedom direction.
- a position measurement system may be configured.
- the configuration of the head of the head portion is not particularly limited.
- a pair of XZ heads that irradiate a detection beam to two points that are the same distance in the X-axis direction with respect to a predetermined point on the grating RG1, and two points that are the same distance in the Y-axis direction with respect to the predetermined point A pair of YZ heads that irradiate a beam may be provided, or a pair of three-dimensional heads that respectively irradiate a detection beam to two points separated in the X-axis direction of the grating RG1, and the two points
- An XZ head or a YZ head that irradiates a detection beam at a point where the position in the Y-axis direction is different may be provided.
- the first position measurement system 30 does not necessarily need to measure the position information of the slider 10 with respect to the surface plate 12 in the direction of 6 degrees of freedom, and may only be able to measure position information in the X, Y, and ⁇ z directions, for example.
- a first position measurement system that measures position information of the slider 10 with respect to the surface plate 12 may be disposed between the surface plate 12 and the slider 10.
- the configuration of the second position measurement system 50 described in the above embodiment is merely an example.
- the head portions 52A and 52B may be fixed to the surface plate 12, and the scales 54A and 54B may be provided integrally with the mark detection system MDS.
- the second measurement system 50 may include only one head portion. Three or more may be provided. In any case, it is desirable that the second positional measurement system 50 can measure the positional relationship between the surface plate 12 and the mark detection system MDS in the direction of 6 degrees of freedom. However, the second measurement system 50 may not necessarily be able to measure the positional relationships in all six degrees of freedom directions.
- the slider 10 is supported by being floated on the surface plate 12 by the plurality of air bearings 18, and the slider 10 is driven in the X-axis direction, and the slider 10 is moved to the first drive device 20 A.
- the drive system 20 is configured to drive the slider 10 in a non-contact state with respect to the surface plate 12, including the second drive device 20 ⁇ / b> B that is integrally driven in the Y-axis direction.
- the present invention is not limited to this, and a drive system configured to drive the slider 10 in the direction of six degrees of freedom on the surface plate 12 may be adopted as the drive system 20.
- a drive system may be configured by a magnetically levitated planar motor. In such a case, the air bearing 18 becomes unnecessary.
- the measuring device 100 may include a drive system that drives the surface plate 12 separately from the vibration isolation device 14.
- the slider 10 can be driven in the X, Y, and ⁇ z directions with respect to the surface plate 12 by a magnetic levitation type or air levitation type planar motor may be employed.
- the two-position measurement system 50 is not necessarily provided.
- the lithography system 1000 includes an exposure apparatus 200, a measurement apparatus 100, and a substrate processing apparatus 300 that are in-line connected to each other.
- a coater / developer C / D
- the lithography system 1000 is installed in a clean room.
- the exposure apparatus 200, the C / D 300, and the measurement apparatus 100 included in the lithography system 1000 all have chambers, and the chambers are arranged adjacent to each other.
- An exposure control apparatus 220 included in the exposure apparatus 200, a coating / development control apparatus 320 included in the C / D 300, and a control apparatus 60 included in the measurement apparatus 100 are connected to each other via a local area network (LAN) 500. Communication between the three parties.
- a storage device 400 is also connected to the LAN 500.
- the exposure apparatus 200 is, for example, a step-and-scan projection exposure apparatus (scanner). In FIG. 9, some of the components in the chamber of the exposure apparatus 200 are omitted.
- the exposure apparatus 200 projects an illumination system IOP, a reticle stage RST that holds the reticle R, and a pattern image formed on the reticle R onto a wafer W coated with a sensitive agent (resist).
- the exposure apparatus 200 includes a projection optical system PL having an optical axis AX in the Z-axis direction parallel to the optical axis AX1 of the aforementioned mark detection system MDS.
- the illumination system IOP includes a light source and an illumination optical system connected to the light source via a light transmission optical system, and is in the X-axis direction (in FIG. 9) on the reticle R set (restricted) by the reticle blind (masking system).
- a slit-like illumination area IAR that is elongated in the direction perpendicular to the paper surface is illuminated with illumination light (exposure light) IL with substantially uniform illuminance.
- illumination light IL exposure light
- the configuration of the illumination system IOP is disclosed in, for example, US Patent Application Publication No. 2003/0025890.
- ArF excimer laser light (wavelength 193 nm) is used as the illumination light IL.
- Reticle stage RST is arranged below illumination system IOP in FIG.
- the reticle stage RST can be finely driven in a horizontal plane (XY plane) on a reticle stage surface plate (not shown) by a reticle stage drive system 211 (not shown in FIG. 9, see FIG. 10) including a linear motor, for example. At the same time, it can be driven within a predetermined stroke range in the scanning direction (the Y-axis direction which is the horizontal direction in FIG. 9).
- reticle stage RST On reticle stage RST, reticle R on which a pattern region and a plurality of marks whose positional relationship with the pattern region are known is formed on the surface (pattern surface) on the ⁇ Z side is placed.
- Position information (including rotation information in the ⁇ z direction) of reticle stage RST in the XY plane is formed on movable mirror 212 (or on the end face of reticle stage RST) by reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 214.
- reticle interferometer reticle laser interferometer
- Measurement information of reticle interferometer 214 is supplied to exposure control device 220 (see FIG. 10). Note that the position information of the reticle stage RST in the XY plane described above may be measured by an encoder instead of the reticle laser interferometer 214.
- Projection unit PU is arranged below reticle stage RST in FIG.
- Projection unit PU includes a lens barrel 240 and a projection optical system PL held in lens barrel 240.
- the projection optical system PL is, for example, both-side telecentric and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, or 1/8 times).
- the reticle R is arranged such that the first surface (object surface) of the projection optical system PL and the pattern surface substantially coincide with each other, and the wafer W having a resist (sensitive agent) coated on the surface thereof is the second surface of the projection optical system PL. It is arranged on the surface (image surface) side.
- a reduced image of the circuit pattern of the reticle R in the illumination area IAR (by the illumination light IL that has passed through the reticle R) ( A reduced image of a part of the circuit pattern) is formed in a region (hereinafter also referred to as an exposure region) IA on the wafer W conjugate to the illumination region IAR via the projection optical system PL.
- reticle R is moved relative to illumination area IAR (illumination light IL) in the scanning direction (Y-axis direction) and exposure area IA (illumination light IL).
- illumination area IAR illumination light IL
- Y-axis direction scanning direction
- exposure area IA (illumination light IL)
- a refraction system including only a plurality of, for example, about 10 to 20 refractive optical elements (lens elements) arranged along the optical axis AX parallel to the Z-axis direction is used.
- a plurality of lens elements constituting the projection optical system PL a plurality of lens elements on the object plane side (reticle R side) are arranged in the Z-axis direction (projection optics) by a drive element (not shown) such as a piezo element.
- the imaging characteristic correction controller 248 (not shown in FIG. 9, refer to FIG. 10) independently adjusts the voltage applied to each drive element based on an instruction from the exposure control device 220, thereby allowing each movable lens to move. It is individually driven to adjust various imaging characteristics (magnification, distortion, astigmatism, coma, curvature of field, etc.) of the projection optical system PL.
- an airtight chamber is provided between specific lens elements adjacent to each other inside the lens barrel 240, and the imaging characteristic correction controller 248 determines the pressure of the gas in the airtight chamber.
- a configuration in which the imaging characteristic correction controller 248 can shift the center wavelength of the illumination light IL may be employed. Also with these configurations, the imaging characteristics of the projection optical system PL can be adjusted.
- Wafer stage WST has a predetermined stroke in the X-axis direction and Y-axis direction on wafer stage surface plate 222 by stage drive system 224 (shown as a block in FIG. 9 for convenience) including a planar motor or a linear motor. And is slightly driven in the Z-axis direction, ⁇ x direction, ⁇ y direction, and ⁇ z direction.
- stage drive system 224 shown as a block in FIG. 9 for convenience
- wafer W is held by vacuum suction or the like via a wafer holder (not shown).
- the wafer holder can hold a 300 mm wafer by suction.
- wafer stage WST instead of wafer stage WST, a first stage that moves in the X-axis direction, the Y-axis direction, and the ⁇ z direction, and a second stage that finely moves in the Z-axis direction, ⁇ x direction, and ⁇ y direction on the first stage.
- a stage device can also be used.
- wafer stage WST and wafer holder of wafer stage WST may be referred to as a “second substrate holding member”.
- Position information of wafer stage WST in the XY plane (including rotation information (yaw amount (rotation amount ⁇ z in ⁇ z direction), pitching amount (rotation amount ⁇ x in ⁇ x direction), rolling amount (rotation amount ⁇ y in ⁇ y direction))) Is always detected by a laser interferometer system (hereinafter abbreviated as an interferometer system) 218 via a movable mirror 216 (or a reflecting surface formed on the end surface of wafer stage WST) with a resolution of, for example, about 0.25 nm. Is done.
- the position information of wafer stage WST in the XY plane may be measured by an encoder system instead of interferometer system 218.
- the measurement information of the interferometer system 218 is supplied to the exposure control device 220 (see FIG. 10). Based on the measurement information of interferometer system 218, exposure control device 220 controls the position (including rotation in the ⁇ z direction) of wafer stage WST in the XY plane via stage drive system 224.
- the position and the amount of inclination in the Z-axis direction on the surface of the wafer W are different from those in the oblique incidence method disclosed in, for example, US Pat. No. 5,448,332. It is measured by a focus sensor AFS (see FIG. 10) comprising a point focus position detection system. Measurement information of the focus sensor AFS is also supplied to the exposure control device 220 (see FIG. 10).
- a reference plate FP whose surface is the same height as the surface of the wafer W is fixed on the wafer stage WST.
- a first reference mark used for baseline measurement of the alignment detection system AS, a pair of second reference marks detected by a reticle alignment detection system described later, and the like are formed.
- An alignment detection system AS for detecting an alignment mark or a first reference mark formed on the wafer W is provided on the side surface of the lens barrel 240 of the projection unit PU.
- the alignment detection system AS it is a kind of an image processing type alignment sensor that measures a mark position by illuminating a mark with broadband light such as a halogen lamp and processing the image of the mark.
- a certain FIA (Field Image Alignment) system is used.
- a diffracted light interference type alignment system may be used instead of the alignment detection system AS of the image processing system or together with the alignment detection system AS.
- a pair of reticle alignment detection systems 213 (FIG. 9) that can simultaneously detect a pair of reticle marks at the same Y position on reticle R placed on reticle stage RST above reticle stage RST. (Not shown, see FIG. 10) are provided at a predetermined distance in the X-axis direction.
- the mark detection result by the reticle alignment detection system 213 is supplied to the exposure control device 220.
- FIG. 10 is a block diagram showing the input / output relationship of the exposure control device 220.
- the exposure apparatus 200 includes a wafer transfer system 270 connected to the exposure control apparatus 220 and the like, in addition to the above components.
- the exposure control device 220 includes a microcomputer, a workstation, or the like, and comprehensively controls the entire device including the above components.
- the wafer transfer system 270 is composed of, for example, a horizontal articulated robot.
- the C / D 300 is not shown, for example, a coating unit that applies a sensitive agent (resist) to the wafer, a developing unit that can develop the wafer, a pre-bake (PB), and development.
- a bake unit that performs pre-bake (post-exposure bake: PEB) and a wafer transfer system (hereinafter referred to as a C / D transfer system for convenience) are provided.
- the C / D 300 further includes a temperature adjustment unit 330 that can adjust the temperature of the wafer.
- the temperature control unit 330 is usually a cooling unit and includes a flat plate (temperature control device) called a cool plate, for example.
- the cool plate is cooled, for example, by circulating cooling water.
- electronic cooling by the Peltier effect is used.
- the storage device 400 includes a management device connected to the LAN 500, and a storage device connected to the management device via a communication path such as a SCSI (SCSI).
- SCSI SCSI
- each of the measurement apparatus 100, the exposure apparatus 200, and the C / D 300 includes a barcode reader (not shown), and a wafer transfer system 70 (see FIG. 6), During wafer transfer by each of the wafer transfer system 270 (see FIG. 10) and the transfer system in the C / D (not shown), the barcode reader reads the identification information of each wafer, such as the wafer number and lot number. As appropriate.
- description regarding reading of identification information of each wafer using a barcode reader is omitted.
- lithography system 1000 a large number of wafers are successively processed by each of exposure apparatus 200, C / D 300, and measurement apparatus 100 (hereinafter also referred to as three apparatuses 100, 200, and 300 as appropriate).
- the entire processing is performed so that the throughput of the entire system is maximized, that is, the processing time of the other apparatus completely overlaps the processing time of the apparatus that requires the most processing time, for example.
- a sequence is defined.
- the C / D within the transport system (e.g., a scalar robot), (a W 1) wafer from arranged wafer carrier into the chamber of the first sheet of C / D300 is taken out, it is carried into the coating unit .
- coating of a resist is started by the application part.
- the resist coating is completed, C / D in the transport system is carried into the baking unit takes out the wafer W 1 from the coating unit. Accordingly, heat treatment of the wafer W 1 (PB) is started by the baking unit.
- the PB of wafer is completed, by the transport system C / D, the wafer W 1 is carried into which the temperature adjusting unit 330 withdrawn from the baking section.
- the wafer W 1 cooling is started by the temperature control unit 330 inside the cool plate.
- This cooling is performed using a temperature at which there is no influence in the exposure apparatus 200, generally a target temperature of the air conditioning system of the exposure apparatus 200 determined within a range of 20 to 25 ° C., for example.
- the wafer temperature is within a range of ⁇ 0.3 [° C.] with respect to the target temperature when the wafer is loaded into the temperature control unit 330, but the target temperature is ⁇ 10 [mK] by the temperature control unit 330. The temperature is adjusted to the range.
- the wafer W 1 is the inside conveying system C / D, the first substrate transfer unit provided between the measuring device 100 C / D300 Placed on top.
- the measuring apparatus 100 previously jointly by the wafer W 1 before exposure sequentially placed on the first substrate transfer unit on the inside conveying system C / D, a vertically movable on the wafer transport system 70 and the slider 10 The data is loaded on the slider 10 by the procedure described in the first embodiment.
- the wafer alignment measurement in the set measurement mode is performed by the measurement apparatus 100, and the correction amount of the position coordinates of the shot of the wafer W (coefficients a 0 and a in the above equation (1)) is performed by the control apparatus 60. 1 ,..., B 0 , b 1 ,.
- the control device 60 uses the correction amount of the calculated position coordinates (coefficients a 0 , a 1 ,..., B 0 , b 1 ,. History information such as wafer mark information, measurement mode information, and history information such as information on all wafer marks for which the detection signal was good and wafer W 1 identification information (wafer number, lot number) in association with each other. (File) is created and stored in the storage device 400.
- the wafer W 1 for which the alignment measurement has been completed is placed on the load side substrate placement portion of the second substrate delivery portion provided near the measurement device 100 inside the chamber of the exposure apparatus 200 by the wafer transfer system 70.
- the second substrate delivery unit is provided with a load side substrate placement unit and an unload side substrate placement unit.
- the measuring apparatus 100 Thereafter, the measuring apparatus 100, the second and subsequent wafers, the same procedure as the wafer W 1, alignment measurement, creating alignment history data (file), so that the conveyance of the wafer is repeated.
- the wafer W 1 placed on the aforementioned load-side substrate platform is transported to a predetermined standby position inside the exposure apparatus 200 by the wafer transport system 270.
- the first wafer W 1 without waiting at the standby position, is loaded immediately by the exposure control unit 220, on the wafer stage WST.
- This wafer loading is performed by the exposure control device 220 using a vertical movement member (not shown) on the wafer stage WST and the wafer transfer system 270 in the same manner as that performed by the measurement apparatus 100 described above.
- the wafer on wafer stage WST is subjected to search alignment similar to that described above using alignment detection system AS, and EGA wafer alignment using, for example, about 3 to 16 shots as alignment shots.
- the exposure control device 220 of the exposure apparatus 200 uses the alignment history data file stored in the storage device 400 as identification information (for example, a wafer to be subjected to wafer alignment and exposure (target wafer)). (Wafer number, lot number) is searched as a key, and alignment history data of the target wafer is acquired. Then, the exposure control apparatus 220 performs the following wafer alignment in accordance with the measurement mode information included in the acquired alignment history data after a predetermined preparation work.
- mode A information is included.
- the number of positions corresponding to the number of alignment shots out of the wafer marks included in the alignment history data and whose position information is measured by the measuring apparatus 100 (mark position information is used for calculating the correction amount).
- a wafer mark is selected and set as a detection target, and the detection target wafer mark is detected using the alignment detection system AS.
- the detection result and the position of wafer stage WST at the time of detection (measurement information by interferometer system 218) and Based on the above, the position information of each wafer mark to be detected is obtained, EGA calculation is performed using the position information, and each coefficient of the following equation (2) is obtained.
- the exposure control apparatus 220 uses the coefficients (c 0 , c 1 , c 2 , d 0 , d 1 , d 2 ) obtained here as coefficients (a 0 , a 1 , a 2 ) included in the alignment history data. , B 0 , b 1 , b 2 ), and design position coordinates X, Y of each shot in the wafer coordinate system with the wafer center represented by the following equation (3) including the replaced coefficient as the origin.
- Correction amounts (alignment correction components) dx and dy of the position coordinates of each shot are obtained using the polynomial related to the above, and the exposure position (reticle) at the time of exposure of each shot for correcting the wafer grid based on the correction amounts
- a target position (hereinafter referred to as a positioning target position for convenience) for alignment with the pattern projection position) is determined.
- exposure is performed not by the static exposure method but by the scanning exposure method, but for convenience, it is referred to as a positioning target position.
- the exposure control apparatus 220 determines a positioning target position for each shot for correcting the wafer grid according to the same procedure as in the above-described A mode.
- the alignment history data includes a wafer mark having a good detection signal among a plurality of wafer marks for several shots and one wafer mark for each of the remaining shots. It is included as a wafer mark using mark position information for calculation.
- the exposure control device 220 selects the number of wafer marks necessary to obtain the shot shape from among the plurality of wafer marks for the several shots described above. Then, using these wafer mark position information (actually measured values), for example, statistical calculation applying the least squares method to the model equation of [Equation 7] disclosed in US Pat. No. 6,876,946. (Also called multi-point EGA calculation within a shot) is performed to obtain a shot shape. Specifically, among 10 parameters in the model equation of [Formula 7] disclosed in the above-mentioned US Pat. No.
- the exposure control unit 220 while the position control of the wafer stage WST in accordance with the target position, performs exposure by the step-and-scan method for each shot on the wafer W 1.
- the projected image by the projection optical system PL of the pattern of the reticle R is deformed in accordance with the obtained shot shape during the scanning exposure.
- At least one of the wavelengths of IL is adjusted.
- the adjustment of the imaging characteristic (aberration) of the projection optical system PL and the adjustment of the center wavelength of the illumination light IL are performed by the exposure control device 220 via the imaging characteristic correction controller 248.
- the measurement apparatus 100 applies a second wafer (referred to as wafer W 2 ).
- wafer alignment measurement in a set mode, creation of alignment history data, and the like are executed according to the above-described procedure.
- the measurement process of measurement apparatus 100 is completed, and the second wafer W 2 is loaded by wafer transfer system 70 on the load side.
- the wafer is placed on the substrate platform, and is transported to a predetermined standby position inside the exposure apparatus 200 by the wafer transport system 270, and waits at the standby position.
- the wafer W 1 and the wafer W 2 is exchanged on the wafer stage, the wafer W 2 after the replacement, is performed similar wafer alignment and exposure as described above.
- the transport to the standby position of the wafer W 2 is still in the case where exposure of wafer (in this case the wafer W 1) on the wafer stage does not end until the end of the wafer stage holding the exposed wafer waits You will wait in the vicinity of the position.
- the wafer transfer system 70 moves the exposed wafer from the unload-side substrate placement unit onto the first substrate transfer unit in parallel with the wafer alignment measurement performed by the measurement apparatus 100.
- the operation of transporting and placing, and the operation of taking out the wafer before exposure after completion of the measurement from the slider 10 and transporting it to the load side substrate placing portion are repeated in a predetermined order.
- the exposed wafer transferred and placed on the first substrate transfer unit by the wafer transfer system 70 is carried into the bake unit by the C / D transfer system, and the baking apparatus in the bake unit is loaded. PEB is performed by the above. A plurality of wafers can be simultaneously accommodated in the bake portion.
- the wafer on which PEB has been completed is taken out of the baking part by the C / D transport system, is carried into the developing part, and development is started by the developing device in the developing part.
- the wafer When the development of the wafer is completed, the wafer is taken out of the developing unit by the C / D transport system and is carried into a predetermined storage stage in the wafer carrier. Later, within the C / D300, with respect to the exposed second and subsequent wafers, the same procedure as the wafer W 1, PEB, development, and so that the conveyance of the wafer is repeated.
- the measurement apparatus 100 can perform wafer alignment measurement in parallel with the operation of the exposure apparatus 200, and sample all shots. All shots EGA as shots can be performed in parallel with the wafer alignment and exposure operations of the exposure apparatus 200. In addition, the higher-order component coefficients in the model formula obtained by the all-shot EGA can also be used as they are in the exposure apparatus 200. Therefore, the exposure apparatus 200 performs alignment measurement using several shots as alignment shots.
- the exposure apparatus 200 can reduce the low It is possible to calculate the positioning target position at the time of exposure of each shot with the same accuracy as when obtaining the coefficients of the second and higher order components. Therefore, it is possible to improve the overlay accuracy of the reticle pattern image and the pattern formed in each shot area on the wafer without reducing the throughput of the exposure apparatus 200.
- the exposure apparatus 200 obtains a coefficient of a first-order or lower-order component of the model equation, and the coefficient of the lower-order component and the measurement apparatus 100 obtain the coefficient.
- the case of using the coefficients of the second and higher order components of the model formula has been described.
- the present invention is not limited to this.
- the coefficients of the second-order and lower components of the above model formula are obtained from the alignment mark detection result in the exposure apparatus 200, and the coefficients of the second-order and lower components and the measurement apparatus 100 acquire them.
- the coefficient of the third or higher order component of the above model formula may be used.
- the coefficients of the third and lower order components of the above model formula are obtained from the detection result of the alignment mark in the exposure apparatus 200, and the coefficients of the third and lower order components and the model formula obtained by the measuring apparatus 100 are obtained.
- the coefficients of higher-order components of the Nth order or higher of the model formula acquired by the measuring apparatus 100 may be used.
- the measurement apparatus 100 when the measurement unit 40 of the measurement apparatus 100 includes the above-described multipoint focus position detection system, the measurement apparatus 100 performs flatness measurement (focus mapping) of the wafer W together with the wafer alignment measurement. May also be performed). In this case, by using the result of the flatness measurement, focus / leveling control of the wafer W at the time of exposure can be performed without performing the flatness measurement by the exposure apparatus 200.
- the object is a 300 mm wafer.
- the object is not limited to this, and a 450 mm wafer having a diameter of 450 mm may be used. Since wafer alignment can be performed by the measurement apparatus 100 separately from the exposure apparatus 200, even for a 450 mm wafer, for example, all-point EGA measurement can be performed without causing a reduction in the throughput of exposure processing.
- the exposure apparatus 200 and the C / D 300 may be connected in-line, and the measurement apparatus 100 may be disposed on the opposite side of the C / D 300 from the exposure apparatus 200.
- the measuring apparatus 100 can be used for alignment measurement similar to that described above (hereinafter referred to as advance measurement), for example, for a wafer before resist application.
- the measurement apparatus 100 can be used for position displacement measurement (overlay displacement measurement) of the overlay displacement measurement mark with respect to the wafer after the development is completed, or can be used for preliminary measurement and overlay displacement measurement.
- FIG. 11 schematically shows the flow of processing in the wafer grid management method in this case.
- step S202 the exposure apparatus 200, with respect to a bare wafer (for convenience, the wafer W 0), using the product reticle R, the exposure is performed by the step-and-scan method.
- the reticle R has a rectangular pattern area on the pattern surface, and a mark (wafer mark when transferred onto the wafer) in the surrounding area or inside the pattern area (in the case of taking one-shot multiple chips). ) Etc. are formed.
- the wafer W 0 is an unexposed wafer, and a resist is applied to the surface thereof by C / D 300.
- step S202 the resist layer of the wafer W 0 surface, the rectangular pattern area and each shot positional relationship design known as the shot number I arranged in a matrix (e.g., 98)
- a transfer image (latent image) with the corresponding mark is formed.
- step S204 the exposed wafer W 0 is unloaded from the wafer stage WST, is conveyed to the developing portion of the C / D300. Specifically, the wafer W 0 is transferred by the wafer transfer system 270 and the wafer transfer system 70 and placed on a first substrate transfer unit provided between the C / D 300 and the measurement apparatus 100. Then, the wafer W 0 is carried into the developing unit of the C / D 300 by the C / D transfer system.
- step S206 the wafer W 0 is developed by the developing device of the developing unit of C / D300. After this development, on the wafer W 0 , a resist image of a wafer mark corresponding to each shot whose positional relationship between I (for example, 98) rectangular shots arranged in a matrix and each shot is known in design. (Hereinafter abbreviated as a wafer mark as appropriate) is formed.
- step S208 the developed wafer W 0, taken from C / D300, is loaded on the slider 10 of the measuring apparatus 100. Specifically, the wafer W 0 is taken out from the developing unit by the C / D transport system and placed on the first substrate transfer unit. Then, the wafer W 0 is transferred from the first substrate transfer unit to the position above the slider 10 at the loading position by the wafer transfer system 70 of the measuring apparatus 100 and loaded onto the slider 10.
- step S210 the control device 60, is all shot 1-point measurement as described above with respect to the developed wafer W 0 is performed, the absolute position coordinates determined for each wafer mark is calculated. That is, the control device 60 measures the position information of the slider 10 using the first position measurement system 30 (and the second position measurement system 50), and uses I (for example, 98) marks using the mark detection system MDS. I wafer marks corresponding to the respective shots are detected, respectively, and based on the detection result of each of the I wafer marks and the absolute position coordinates (X, Y) of the slider 10 at the time of detection of each of the I wafer marks.
- I for example, 98
- the absolute position coordinates (X, Y) of the I wafer marks corresponding to each of the I shots on the wafer W 0 are obtained.
- the control device 60 determines the X-axis direction and Y-axis direction Abbe errors of the first position measurement system 30 based on the measured values in the ⁇ x direction and ⁇ y direction of the slider 10 measured by the first measurement system 30.
- the absolute position coordinates (X, Y) of the I wafer marks are obtained using the measurement values in the X-axis direction and the Y-axis direction of the second position measurement system 50 as offsets.
- step S212 the control unit 60, using the I-number of the absolute position coordinates of the marks found, change information of the I-number of shot array on the wafer W 0 (wafer grid) is determined. For example, based on the known positional relationship between the wafer mark and the shot center, the control device 60 calculates actual values of the absolute position coordinates (XY) of each of the I shots from the absolute position coordinates of the I wafer marks. Based on the data of the difference between the measured value of the absolute position coordinate (XY) of each of the I shots and the design value of the position coordinate (XY) of each shot, statistical calculation such as the least square method is performed.
- control device 60 calculates actual values of the absolute position coordinates (XY) of each of the I shots from the absolute position coordinates of the I wafer marks based on the known positional relationship between the wafer mark and the shot center. Then, a map is created which includes the difference data between the actual measurement value of the absolute position coordinate (XY) of each of the I shots and the design value of the position coordinate (XY) of each shot, and this map is created on the wafer You may memorize
- step S214 the control device 60 uses the variation information from the wafer grid design value obtained in step S210 as the reference wafer grid variation information stored in advance in the memory (or storage device 400). In comparison, the fluctuation amount of the wafer grid from the fluctuation of the reference wafer grid is obtained. Due to the processing in step S214, a shot arrangement error caused by a stage grid error between different exposure apparatuses, or a shot arrangement error caused by a stage grid error between different time points of the same exposure apparatus. Can be managed.
- step S214 prior to the processing of step S214, the relative upper another bare wafer from the wafer W 0 using the reticle R in different scanning stepper the exposure apparatus 200, exposure in the same manner as in step S202 described above
- step S202 By performing the same processing as in steps S204 to S212 on the exposed wafer, fluctuation information of the reference wafer grid is obtained and stored in the memory (or storage device 400). Yes.
- step S214 prior to the processing of step S214, the for another wafer from the wafer W 0, by steps S202 ⁇ S208 and similar processing is performed, variation information of wafer grid as a reference is obtained, It is stored in the memory (or storage device 400).
- the management method according to the present embodiment it is possible to manage the wafer grid fluctuation caused by the apparatus without using the reference wafer. For this reason, it is possible to avoid the following inconvenience when using the reference wafer.
- the operation using the reference wafer becomes a problem because the reference wafer is reused by a plurality of exposure apparatuses. Since not only one reference wafer but usually a plurality of reference wafers are produced, it is necessary to guarantee individual differences between the reference wafers. In addition, the reference wafer may be damaged or may deteriorate during use. Furthermore, in the method of managing the wafer grid using the reference wafer, a resist is applied to the surface of the reference wafer and exposed, and after the necessary processing is completed, the resist is removed and the reference wafer is cleaned. Repeating this process may damage the surface. Further, the back surface of the reference wafer also has a mark on a chuck member (pin chuck or the like) included in the wafer holder, which generates an adsorption strain of the reference wafer and distorts the wafer grid.
- a chuck member pin chuck or the like
- the use of a reference wafer has the following advantages. a. Measurement (correction) can be performed when it is desired to measure (correct) the fluctuation of the wafer grid without worrying about the vacancy or serial number of the reference wafer. b. Since a bare wafer can be used in place of the reference wafer, quality control can be easily performed. c.
- the wafer grid can be managed with the product shot map and product reticle. That is, the wafer grid can be managed using the overlay measurement mark and alignment mark on the product reticle. As a result, a dedicated reticle for quality control becomes unnecessary.
- the developed wafer is the same as the wafer before exposure after PB described above. It may be loaded again on the slider 10 of the measurement apparatus 100 in the procedure, and the measurement of the positional deviation of the overlay deviation measurement mark (for example, a box-in-box mark) formed on the wafer may be performed. That is, since the measuring apparatus 100 can measure the absolute value of the mark on the wafer (on the reference coordinate system by the first position measuring system 30), the overlay deviation which is a kind of relative position measurement as well as wafer alignment measurement. It is also suitable as a measuring device for measuring the displacement of the measurement mark.
- the overlay deviation measurement mark for example, a box-in-box mark
- FIG. 12 schematically shows the flow of processing in the overlay measurement method in this case.
- step S302 the application portion of the C / D300, exposure of the first layer (undercoat layer) (the wafer W 11) wafers made by the different exposure apparatus, for example, a scanner or a stepper the exposure apparatus 200 Then, a resist is applied.
- the wafer W 11 before application of the resist is exposed to the underlying layer, and a plurality of, for example, I (I is, for example, 98) shots, a wafer mark whose design positional relationship with the shot is known, and overlay deviation measurement.
- the first mark (to be precise, a resist image of the first mark (also referred to as a first mark image as appropriate)) is formed corresponding to each shot. In this case, the design positional relationship of each of the I first mark images is also known.
- step S304 the wafer W 11 on which the resist is applied is, through the same predetermined process as the wafer W 1 mentioned above is loaded onto the wafer stage WST of the exposure apparatus 200. Specifically, the wafer W 11 was subjected to heat treatment (PB) in the bake unit, temperature control in the temperature control unit 330, and alignment measurement (here, A mode measurement) by the measurement apparatus 100. Thereafter, it is loaded on wafer stage WST.
- PB heat treatment
- temperature control in the temperature control unit 330
- alignment measurement here, A mode measurement
- step S306 the exposure controller 220 of the exposure apparatus 200, the wafer W 11 on the wafer stage WST, similar to that described above using the alignment detection system AS search alignment, and for example, about 3 to 16 EGA wafer alignment is performed using the shot as an alignment shot.
- step S308 the exposure control device 220 obtains correction amounts (alignment correction components) dx and dy of the position coordinates of each shot represented by the above-described equation (3) based on the result of wafer alignment. Based on this correction amount, a positioning target position for exposure of each shot for correcting the wafer grid is determined.
- step S310 the by the exposure device 200, while the position control of the wafer stage WST in accordance with the target position, a second layer in a step-and-scan method for each shot on the wafer W 11 (first The upper layer) is exposed to the base layer.
- the exposure device 200 performs exposure using the reticle second mark corresponding to the first mark image on the wafer W 11 are formed (for convenience, the reticle R 11). Therefore, the exposure of the second layer causes the pattern area of the reticle R 11 to be superimposed and transferred onto the I shots on the wafer W 11 , and corresponds to the positional relationship of the I first marks. Transfer images of I second marks arranged in a positional relationship are formed.
- step S312 the wafer W 11 exposure of the second layer is completed, through the same process as the wafer W 1 exposed above, is carried into the developing portion of the C / D300.
- the wafer W 11 is transferred by the wafer transfer system 270 to the unload side substrate platform of the second substrate transfer unit, and is transferred from the unload side substrate platform by the wafer transfer system 70 to the first substrate transfer unit. It is carried on the part, carried into the baking part of C / D300 by the C / D internal conveyance system, and PEB is performed by the baking device in the baking part. Wafer W 11 which PEB is completed is removed from the baking section by the transport system C / D, it is transported to the developing portion.
- step S314 the by the developing device of the developing unit, the wafer W 11 to transfer images of a plurality of second mark is formed is developed.
- a set of I shots and corresponding second mark images, together with I shots, are formed on the wafer W 11 in a predetermined positional relationship.
- the target substrate That is, in this way, a substrate to be measured (superimposition measurement target substrate) at the time of overlay measurement is manufactured.
- a set of the first mark image and the corresponding second mark image for example, a resist image of a box-in-box mark composed of an outer box mark and an inner box mark arranged on the inside is used. it can.
- step S316 the developed wafer W 11 (substrate for overlay measurement) is taken out of the developing unit by the C / D transport system and placed on the first substrate transfer unit.
- step S318 the developed wafer W 11 (overlapping measurement target substrate) placed on the first substrate transfer unit is placed on the slider 10 by the above-described procedure by the control device 60 of the measurement device 100.
- the absolute position coordinates in the XY plane of the first mark image and the second mark image of the I set are obtained as follows. That is, the control device 60, the position information of the slider 10, while measuring with the first position measuring system 30 (and the second position measuring system 50), I set on the wafer W 11 using the mark detection system MDS The first mark image and the second mark image are detected, the detection result of each of the first set of the first mark image and the second mark image, and the absolute position coordinates (X, Y) of the slider 10 when each mark image is detected.
- the control device 60 based on the measured values in the ⁇ x direction and ⁇ y direction of the slider 10 measured by the first measurement system 30, the X-axis direction and Y-axis direction Abbe errors of the first position measurement system 30, and Using the measurement values in the X-axis direction and the Y-axis direction of the second position measurement system 50 as offsets, absolute position coordinates in the XY plane of each of the I sets of the first mark image and the second mark image are obtained.
- step S320 the control device 60 superimposes the first layer and the second layer on the basis of the absolute position coordinates of the first mark image and the absolute position coordinates of the second mark image that form a pair.
- An alignment error (overlay deviation) is obtained.
- step S322 the control device 60 causes the overlay error to be determined based on the absolute position coordinates of the I first mark images and the absolute position coordinates of the I second mark images.
- the control device 60 determines that the overlay error is mainly caused by the exposure of the first layer in both the X-axis direction and the Y-axis direction.
- the overlay error is mainly caused by the exposure of the second layer in both the X-axis direction and the Y-axis direction.
- the controller 60 mainly causes the overlay error in the X-axis direction and second in the Y-axis direction.
- the overlay error is mainly caused by the exposure of the second layer in the X-axis direction, and in the Y-axis direction. Is determined to be mainly due to the exposure of the first layer.
- the control device 60 determines the overlay error based on the absolute position coordinates of the I first mark images and the absolute position coordinates of the I second mark images.
- the specific determination method is not particularly limited as long as it is mainly determined whether the exposure of the first layer or the exposure of the second layer is caused.
- the control device 60 of the measurement apparatus 100 calculates the absolute position coordinates of the first mark image and the absolute position coordinates of the second mark image, respectively. Based on these absolute position coordinates, it is possible to determine whether the overlay error is mainly caused by the exposure of the underlying layer or the exposure of the upper layer. There can be no excellent effect.
- the case where the exposure apparatus used for the exposure of the underlayer is different from the exposure apparatus used for the exposure of the upper layer is not limited to this.
- the exposure apparatus 200 uses the underlayer and the upper layer. Even when the above exposure is performed, the overlay accuracy can be managed with high accuracy by the series of processes in steps S302 to S322 described above.
- step S320 since the overlay error (overlay deviation) between the first layer and the second layer is obtained, step S322 may be executed as necessary.
- only one measuring device 100 is provided.
- a plurality of measuring devices for example two, may be provided as in the following modification.
- FIG. 13 schematically shows a configuration of a lithography system 2000 according to the modification.
- the lithography system 2000 includes an exposure apparatus 200, a C / D 300, and two measurement apparatuses 100a and 100b configured in the same manner as the measurement apparatus 100 described above.
- the lithography system 2000 is installed in a clean room.
- two measurement apparatuses 100a and 100b are arranged in parallel between the exposure apparatus 200 and the C / D 300.
- the exposure apparatus 200, the C / D 300, and the measurement apparatuses 100a and 100b included in the lithography system 2000 are arranged such that the chambers are adjacent to each other.
- the exposure control device 220 of the exposure device 200, the coating / development control device 320 of the C / D 300, and the control device 60 included in each of the measuring devices 100a and 100b are connected to each other via the LAN 500 and communicate with each other.
- a storage device 400 is also connected to the LAN.
- the same operation sequence as that of the lithography system 1000 described above can be set, so that the same effect as the lithography system 1000 can be obtained.
- both the measurement apparatuses 100a and 100b use the alignment measurement (hereinafter referred to as post-measurement) for the wafer after PB described above, and the wafer for the wafer before resist coating. It is also possible to employ a sequence used for the same alignment measurement (preliminary measurement). In this case, since the pre-measurement for a certain wafer is performed in parallel with the above-described series of wafer processing for a wafer different from the wafer, the throughput of the entire system is hardly reduced. However, for the first wafer, the pre-measurement time cannot be overlapped with a series of wafer processing times.
- the position measurement error of the wafer mark caused by resist coating can be obtained by comparing the position actually measured by the pre-measurement with respect to the same wafer mark on the same wafer and the position actually measured by the post-measurement. Accordingly, by correcting the position of the same wafer mark actually measured during the wafer alignment for the same wafer by the exposure apparatus 200 by the amount of the wafer mark position measurement error caused by the resist coating obtained above, the resist coating is performed. This makes it possible to perform highly accurate EGA measurement that cancels the measurement error of the wafer mark position caused by.
- the same wafer is subjected to the same measurement apparatus 100a or the pre-measurement. It is desirable to adopt the sequence performed by 100b.
- one of the measuring devices 100a and 100b may be dedicated to pre-measurement and the other may be dedicated to post-measurement.
- the reference wafer is mounted on each slider 10, and the position of the slider 10 is measured by the first position measurement system 30, and the mark on the reference wafer is marked with a mark detection system. detected by MDS, on the basis of the detection result, as in the case of the wafer W 0 described above, the grid of the reference wafer is obtained at each measuring device 100a and 100b.
- a mark that can be measured with the resolution of the mark detection system MDS (any of a line and space mark, a two-dimensional cross mark, and a box mark) is used at a specific pitch, for example, 1 mm pitch
- a specific pitch for example, 1 mm pitch
- a wafer that is formed on the entire surface by etching or the like can be used.
- the coordinate systems of the respective first position measurement systems 30 are aligned so that the difference between the obtained grids of the reference wafer is eliminated. This is because the grid of the same reference wafer is essentially the same, and therefore, if there is an error between the obtained grids of the reference wafer, the reference coordinate system that defines the movement of the sliders 10 of the measuring apparatuses 100a and 100b This is because there is an error between them.
- the reference wafer is necessary for calibration between the coordinate systems that define the movement of the slider of the measuring device, so the necessary scene is only when each measuring device is started up, and the required number of wafers
- the frequency is overwhelmingly lower than that of the prior art, and it is only necessary to measure the mark on the reference wafer with each measuring apparatus, and there is no need to expose the reference wafer. That is, since the resist is not applied or peeled off, the reference wafer is not damaged.
- the reference wafer may be stored carefully as a prototype. In addition, after each measurement apparatus is started up, the reference wafer is not necessary in principle.
- the above-described overlay deviation measurement on the wafer after the development may be performed.
- one of the measurement devices 100a and 100b may be dedicated to the post-measurement described above, and the other may be dedicated to overlay displacement measurement.
- a sequence in which post measurement and overlay deviation measurement are performed by the same measurement apparatus 100a or 100b may be employed. In the latter case, prior measurement may be further performed on the same wafer by the same measurement apparatus.
- the measuring apparatus 100a may be arranged on the opposite side of the exposure apparatus 200 of the C / D 300.
- the measurement apparatus 100a is suitable for performing the above-described overlay deviation measurement on the wafer after completion of development, considering the flow of wafer conveyance.
- the measuring apparatus 100a may be used for preliminary measurement instead of the overlay deviation measurement, or the overlay deviation. You may use for measurement and prior measurement.
- three or more measuring apparatuses 100 are provided, all the apparatuses are connected in-line, and two of the three measuring apparatuses 100 are pre-measured and post-measured.
- the remaining one measuring device may be dedicated to overlay displacement measurement.
- the former two may be dedicated to pre-measurement and post-measurement, respectively.
- the signal processing device 49 that processes the detection signal of the mark detection system MDS included in the measurement devices 100, 100a, and 100b is obtained as the detection result of the mark detection system MDS.
- the control device 60 performs the EGA calculation using the measurement result of the wafer mark.
- EGA calculation is performed using position information of a part of wafer mark position information selected from a plurality of wafer marks having good detection signal waveforms obtained as detection results by the mark detection system MDS.
- the present invention is not limited to this, and the signal processing device 49 sends to the control device 60 the measurement results of the remaining wafer marks excluding the wafer mark whose waveform of the detection signal obtained as the detection result of the mark detection system MDS is defective. It is also good. Further, the control device 60 may determine whether or not the detection signal obtained as a detection result by the mark detection system MDS is good, instead of the signal processing device. In this case, the control device 60 also detects the detection signal. The above-described EGA calculation is performed using only the measurement results of the remaining wafer marks excluding the wafer mark determined to be good or the wafer mark whose detection signal is determined to be defective. It is desirable that the exposure control device 220 performs the above-described EGA calculation using the measurement results of some wafer marks selected from the measurement results of the wafer marks used for the EGA calculation by the control device 60.
- the measurement apparatus 100, 100a, 100b is illustrated as being disposed between the exposure apparatus 200 and the C / D 300 instead of the inline interface unit.
- the measurement apparatus (100, 100a, 100b) may be a part of the exposure apparatus.
- the measurement apparatus (100, 100a, 100b) is installed in the chamber of the exposure apparatus 200 as a part of the exposure apparatus 200, the measurement apparatus may or may not include the chamber. .
- the measurement apparatus may include a control apparatus or may be controlled by the control apparatus of the exposure apparatus without including the control apparatus. May be. In any case, the measurement apparatus is connected inline to the exposure apparatus.
- the substrate processing apparatus is C / D.
- the substrate processing apparatus is an apparatus connected inline to the exposure apparatus and the measurement apparatus, and the substrate processing apparatus is sensitive to the substrate (wafer). It may be a coating device (coater) for applying an agent (resist) or a developing device (developer) for developing a substrate (wafer) after exposure, or a coating device (inline connected to the exposure device and the measuring device). A coater) and a developing device (developer).
- the measuring apparatus can be used only for the post-measurement described above or for the pre-measurement and the post-measurement.
- the exposed wafer is carried into a developing device that is not connected inline to the exposure device.
- the measuring apparatus can be used only for the post-measurement described above or for the post-measurement and overlay deviation measurement. In this case, a wafer previously coated with a resist at another location is carried into the exposure apparatus.
- the exposure apparatus is a scanning stepper.
- the present invention is not limited to this, and the exposure apparatus may be a stepper or the like. Or a step-and-stitch reduction projection exposure apparatus that synthesizes a shot area and a shot area.
- the second embodiment and the like can also be applied to a multi-stage type exposure apparatus provided with a stage.
- the exposure apparatus is not limited to the dry type exposure apparatus that exposes the wafer W without using the liquid (water) described above.
- An immersion type exposure apparatus that exposes a substrate through a liquid may be used.
- the exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor, and may be, for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate.
- the semiconductor device is manufactured through a lithography step in which the photosensitive object is exposed using the reticle (mask) on which the pattern is formed, and the exposed photosensitive object is developed by the exposure apparatus constituting the lithography system according to the embodiment. Is done. In this case, a highly integrated device can be manufactured with a high yield.
- the semiconductor device manufacturing process includes a device function / performance design step, a reticle (mask) manufacturing step based on this design step, a device assembly step (dicing process, bonding process, Including a packaging process), an inspection step, and the like.
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Abstract
Description
a. グリッドの誤差とは座標依存であり、場所が同じなら同じ誤差を持つ。マークの位置を計測し、グリッド誤差の補正を行ったポイントの近くなら、誤差も小さいものと考えられる。
b. スキャン速度あるいはスキャン加速度などの誤差は、グリッド誤差を生じさせない。仮に、グリッド誤差を生じさせるとしても、その誤差は、スキャンの都度変化するものではないので、一度の調整で足り、定期的にメンテナンスする必要は無い。
以下、第1の実施形態について図1~図7に基づいて説明する。図1には、第1の実施形態に係る計測装置100の構成が斜視図にて概略的に示されている。なお、図1に示される計測装置100は、実際には、チャンバと、該チャンバの内部に収容された構成部分とで構成されるが、本実施形態では、チャンバに関する説明は省略する。本実施形態では、後述するようにマーク検出系MDSが設けられており、以下では、マーク検出系MDSの光軸AX1の方向をZ軸方向とし、これに直交する面内で、後述する可動ステージが長ストロークで移動する方向をY軸方向、Z軸及びY軸に直交する方向をX軸方向とし、X軸、Y軸、Z軸回りの回転(傾斜)方向を、それぞれθx、θy及びθz方向として、説明を行う。ここで、マーク検出系MDSは、側面視(例えば+X方向から見て)L字状の外形を有し、その下端(先端)には円筒状の鏡筒部41が設けられ、鏡筒部41の内部には、Z軸方向の光軸AX1を有する複数のレンズエレメントから成る光学系(屈折光学系)が収納されている。本明細書では、説明の便宜上から鏡筒部41の内部の屈折光学系の光軸AX1を、マーク検出系MDSの光軸AX1と称している。
次に、上述した計測装置100を含むリソグラフィシステムに関する第2の実施形態について、図8~図10に基づいて説明する。
次に、計測装置100を用いる露光装置起因のウエハグリッドの管理方法を、リソグラフィシステム1000に適用した場合を例として説明する。図11には、この場合のウエハグリッドの管理方法における処理の流れが概略的に示されている。
a. 基準ウエハの空きやシリアル番号を気にすることなく、ウエハグリッドの変動を計測したい(補正を行いたい)時に計測(補正)を実効可能となる。
b. 基準ウエハの代わりにベアウエハを使えるため、品質管理を手軽に実行可能となる。
c. 製品ショットマップ・製品レチクルでウエハグリッドの管理が可能となる。すなわち、製品レチクルについている重ね計測用マークやアライメントマークを使ってウエハグリッドの管理をすることが可能となる。この結果、品質管理用の専用レチクルが不要となる。また、製品ショットマップそのもので品質管理が可能となり、さらには、場所依存誤差のみならず、スキャン速度や加速度、その他製品露光動作で生じる全ての誤差要因によって生じるウエハグリッドの変動量を計測できるので、この計測結果に基づいて、補正を行うことで、先に説明したある種の妥協を一切排除することが可能になる。
次に、計測装置100を用いる重ね合わせ計測方法を、リソグラフィシステム1000に適用した場合を例として説明する。図12には、この場合の重ね計測方法における処理の流れが概略的に示されている。
図13には、変形例に係るリソグラフィシステム2000の構成が、概略的に示されている。リソグラフィシステム2000は、露光装置200と、C/D300と、前述の計測装置100と同様の構成された2台の計測装置100a、100bと、を備えている。リソグラフィシステム2000は、クリーンルーム内に設置されている。
Claims (39)
- 基板に形成された複数のマークの位置情報を計測する計測装置であって、
前記基板を保持して移動可動なステージと、
前記ステージを駆動する駆動システムと、
格子部を有する計測面と前記計測面にビームを照射するヘッド部の一方が前記ステージに設けられ、前記ヘッド部からのビームを前記計測面に照射するとともに、該ビームの前記計測面からの戻りビームを受光して前記ステージの位置情報を取得可能な絶対位置計測系と、
前記基板に形成されたマークを検出するマーク検出系と、
前記駆動システムによる前記ステージの移動を制御し、前記マーク検出系を用いて前記基板に形成された前記複数のマークをそれぞれ検出し、前記複数のマークそれぞれの検出結果と前記複数のマークそれぞれの検出時に前記絶対位置計測系を用いて得られる前記ステージの位置情報とに基づいて、前記複数のマークそれぞれの絶対位置座標を求める制御装置と、を備える計測装置。 - 前記絶対位置計測系は、前記ステージの前記絶対位置座標を含む少なくとも3自由度方向の位置情報を計測可能である請求項1に記載の計測装置。
- 前記ステージを所定平面内で互いに直交する第1、第2方向及び前記所定平面に垂直な第3方向を含む6自由度方向に移動可能に支持するとともに、前記ヘッド部が設けられたベース部材と、
前記マーク検出系と前記ベース部材との前記6自由度方向に関する相対的な位置情報を計測する相対位置計測系と、をさらに備え、
前記制御装置は、前記相対位置計測系による計測情報と前記絶対位置計測系による計測情報とに基づいて前記駆動システムによる前記ステージの駆動を制御する請求項1又は2に記載の計測装置。 - 前記制御装置は、前記複数のマークの前記絶対位置座標を求めるに際し、前記相対位置計測系による計測情報から得られる前記マーク検出系と前記ベース部材との前記所定面内における相対位置情報を補正量として用いる請求項3に記載の計測装置。
- 前記格子部は、前記所定平面内で互いに交差する第1周期方向及び第2周期方向を有する2次元格子を有し、
前記計測面からの戻りビームは、前記格子部からの回折ビームを含み、
前記ヘッド部は、前記計測面に第1ビームを照射し、前記格子部からの第1回折ビームを受光して前記ステージの前記第1周期方向の位置情報を計測する第1ヘッドと、前記計測面に第2ビームを照射し、前記格子部からの第2回折ビームを受光して前記ステージの前記第2周期方向の位置情報を計測する第2ヘッドと、前記計測面に第3ビームを照射し、前記格子部からの光を受光して前記ステージの前記第3方向の位置情報を計測する少なくとも3つの第3ヘッドとを有する請求項1~4のいずれか一項に記載の計測装置。 - 前記第1ヘッドからの前記第1ビームの前記計測面上の照射点と、前記第2ヘッドからの前記第2ビームの前記計測面上の照射点とは、前記マーク検出系の検出領域の下方に位置する同一の検出点に設定され、前記少なくとも3つの第3ヘッドそれぞれからの第3ビームの前記計測面上の照射点は、前記検出点の周囲に設定される請求項5に記載の計測装置。
- 前記検出点は、前記マーク検出系の検出中心の直下に位置し、前記検出点と前記検出中心とは、前記所定平面内の位置が一致する請求項6に記載の計測装置。
- 前記第1周期方向と前記第2周期方向とは、互いに直交する請求項5~7のいずれか一項に記載の計測装置。
- 前記第1周期方向と前記第2周期方向との一方は、前記第1方向に一致し、前記第1周期方向と前記第2周期方向との他方は、前記第2方向に一致する請求項8に記載の計測装置。
- 前記基板上には、前記複数のマークとの対応関係が既知の複数の区画領域がさらに形成され、
前記制御装置は、求めた複数の前記マークの前記絶対位置座標を用いて、統計演算を行い、前記基板上の前記複数の区画領域の配列の設計値からの補正量を求める請求項1~9のいずれか一項に記載の計測装置。 - 前記基板上には、露光装置によるマスクを用いた露光により、前記複数のマークと複数のマークとの対応関係が既知の複数の区画領域とが同時に形成されており、
前記制御装置は、前記複数のマークの前記絶対位置座標を求めるとともに、該複数のマークの絶対位置座標に基づいて、前記複数の区画領域の配列の前記露光装置起因の誤差を求める請求項1~9のいずれか一項に記載の計測装置。 - 前記基板上には、所定層及びその下地層それぞれの露光で形成された第1マーク及び第2マークの組から成る重ね合わせずれ計測マークが、前記マークとして複数形成され、
前記制御装置は、前記複数の重ね合わせずれ計測マークそれぞれの前記第1マークと前記第2マークとの絶対位置座標を求める請求項1~11のいずれか一項に記載の計測装置。 - 前記制御装置は、相互に組を成す前記第1マークと前記第2マークとの絶対位置座標に基づいて、前記所定層と前記下地層との間の重ね合わせずれを算出する請求項12に記載の計測装置。
- 前記制御装置は、相互に組を成す前記第1マークと前記第2マークとの絶対位置座標に基づいて、重ね合わせずれが、前記所定層と前記下地層とのいずれに主として起因するかを判別する請求項12又は13に記載の計測装置。
- 請求項1~11のいずれか一項に記載の計測装置と、
前記計測装置による前記複数のマークの位置情報の計測が終了した前記基板が載置される基板ステージを有し、該基板ステージ上に載置された前記基板に対して、該基板上の複数のマークのうち選択された一部のマークの位置情報を計測するアライメント計測及び前記基板をエネルギビームで露光する露光が行われる露光装置と、を備えるリソグラフィシステム。 - 前記計測装置で得られた前記複数のマークの位置情報と、前記露光装置において前記アライメント計測で得られたマークの位置情報とに基づいて、前記基板ステージの移動が制御される請求項15に記載のリソグラフィシステム。
- 前記計測装置は、前記露光装置のチャンバ内に設置されている請求項15又は16に記載のリソグラフィシステム。
- 前記計測装置は、前記露光装置にインライン接続されている請求項15又は16に記載のリソグラフィシステム。
- 前記計測装置及び前記露光装置にインライン接続され、基板上に感応剤を塗布する機能を有する基板処理装置をさらに備える請求項18に記載のリソグラフィシステム。
- 前記基板処理装置は、基板上に感応剤を塗布する塗布装置、又は基板上に感応剤を塗布するとともに、露光後の前記基板を現像する塗布現像装置である請求項19に記載のリソグラフィシステム。
- 前記計測装置は、前記露光装置と前記基板処理装置との間に配置される請求項19又は20に記載のリソグラフィシステム。
- 前記計測装置は、前記感応剤が塗布される前の基板上の複数のマークの位置情報の計測を行う事前計測と、前記感応剤が塗布された前記基板上の前記複数のマークの位置情報の計測を行う事後計測との両方で用いられる請求項19~21のいずれか一項に記載のリソグラフィシステム。
- 前記計測装置は、複数設けられ、該複数の計測装置のうちの第1計測装置と第2計測装置とは、前記露光装置と前記基板処理装置との間に配置され、
前記第1計測装置及び前記第2計測装置は、前記感応剤が塗布される前の基板上の複数のマークの位置情報の計測を行う事前計測と、前記感応剤が塗布された前記基板上の前記複数のマークの位置情報の計測を行う事後計測との両方で用いられ、
前記第1計測装置と前記第2計測装置は、複数枚の基板を連続処理するに際し、いずれも、同一基板に対する前記事前計測と前記事後計測とで用いられる請求項19又は20に記載のリソグラフィシステム。 - 前記計測装置は、複数設けられ、前記複数の計測装置のうちの第1計測装置は、前記露光装置と前記基板処理装置との間に配置され、前記複数の計測装置のうちの第2計測装置は、前記基板処理装置を挟んで前記露光装置の反対側に配置され、
前記第2計測装置は、前記感応剤が塗布される前の基板上の複数のマークの位置情報の計測を行う事前計測に用いられ、
前記第1計測装置は、前記感応剤が塗布された前記基板上の前記複数のマークの位置情報の計測を行う事後計測に用いられる請求項19又は20に記載のリソグラフィシステム。 - 前記第1計測装置が備える前記絶対位置計測系と、前記第2計測装置が備える前記絶対位置計測系とは、多数の基準マークが所定間隔で形成された基準基板を用いて予め較正されている請求項24に記載のリソグラフィシステム。
- 請求項12~14のいずれか一項に記載の計測装置と、
前記計測装置にインラインにて接続され、前記計測装置による前記複数のマークの位置情報の計測が終了した前記基板が載置される基板ステージを有し、該基板ステージ上に載置された前記基板に対して、該基板上の複数のマークのうち選択された一部のマークの位置情報を計測するアライメント計測及び前記基板をエネルギビームで露光する露光が行われる露光装置と、
前記計測装置及び前記露光装置にインライン接続され、露光後の基板を現像する機能を有する基板処理装置と、を備えるリソグラフィシステム。 - 前記基板処理装置は、露光後の前記基板を現像する現像装置、又は基板上に感応剤を塗布するとともに、露光後の前記基板を現像する塗布現像装置である請求項26に記載のリソグラフィシステム。
- 前記計測装置は、前記感応剤が塗布された前記基板上の前記複数のマークの位置情報の計測を行う事後計測と、現像終了後の前記基板上の重ね合わせずれ計測マークの位置ずれ量を計測する重ね合わせずれ計測の両方で用いられる請求項26又は27に記載のリソグラフィシステム。
- 前記計測装置は、複数設けられ、該複数の計測装置のうちの第1計測装置は、前記露光装置と前記基板処理装置との間に配置され、残りの計測装置のうちの第2計測装置は、前記基板処理装置を挟んで前記露光装置の反対側に配置され、
前記第1計測装置は、前記感応剤が塗布された前記基板上の前記複数のマークの位置情報の計測を行う事後計測で用いられ、
前記第2計測装置は、現像終了後の前記基板上の重ね合わせずれ計測マークの位置ずれ量を計測する重ね合わせずれ計測で用いられる請求項26又は27に記載のリソグラフィシステム。 - 請求項15~29のいずれか一項に記載のリソグラフィシステムを用いて基板を露光することと、
露光された前記基板を現像することと、を含むデバイス製造方法。 - 請求項1~11のいずれか一項に記載の計測装置を備え、
前記計測装置を用いて複数のマークの位置情報が取得された基板をエネルギビームで露光する露光装置。 - 基板ステージをさらに備え、
前記基板ステージは、前記計測装置による前記複数のマークの位置情報の取得が終了した前記基板を保持可能であり、
前記計測装置を用いて取得された位置情報に基づいて、前記基板ステージの移動が制御される請求項31に記載の露光装置。 - 請求項31~33のいずれか一項に記載の露光装置を用いて基板を露光することと、
露光された前記基板を現像することと、を含むデバイス製造方法。 - 基板上にマトリクス状に配置された複数の区画領域の配列の変動を管理する管理方法であって、
露光装置により、マスクに形成されたパターン及びマークを基板上に順次転写して、前記基板上に、前記マークと共に区画領域を複数形成することと、
前記複数の区画領域が形成された前記基板を、格子部を有する計測面と前記計測面にビームを照射するヘッド部の一方が設けられ、所定平面内で移動可動なステージに搭載し、前記ステージの位置情報を、前記ステージに設けられた格子部を有する計測面にヘッド部を介してビームを照射し、該ビームの前記計測面からの戻りビームを受光して前記ステージの前記所定平面内の絶対位置座標を含む位置情報を計測可能な絶対位置計測系を用いて計測しつつ、マーク検出系を用いて前記基板上の前記複数の区画領域それぞれに対応する前記複数のマークをそれぞれ検出し、前記複数のマークそれぞれの検出結果と前記複数のマークそれぞれの検出時の前記絶対位置計測系の計測情報とに基づいて、前記基板上の前記複数の区画領域それぞれに対応する前記複数のマークの前記所定平面内の絶対位置座標を求めることと、
求めた前記複数のマークの絶対位置座標に基づいて、前記複数の区画領域の配列情報を求めることと、を含む、管理方法。 - 前記求めた前記複数の区画領域の配列情報と、
基準となる前記複数の区画領域の配列情報とを比較することをさらに含む請求項34に記載の管理方法。 - 予め、前記露光装置又は別の露光装置により前記マスクを用いて別の基板の露光を行うことで、前記別の基板上に前記複数の区画領域とともに対応する複数のマークを形成し、
前記複数の区画領域が形成された前記別の基板を前記ステージに搭載し、前記ステージの位置情報を、前記絶対位置計測系を用いて計測しつつ、前記マーク検出系を用いて前記別の基板上の前記複数の区画領域それぞれに対応する前記複数のマークをそれぞれ検出し、前記複数のマークそれぞれの検出結果と前記複数のマークそれぞれの検出時の前記ステージの前記絶対位置座標とに基づいて、前記別の基板上の前記複数の区画領域それぞれに対応する前記複数のマークの絶対位置座標を求め、求めた前記複数のマークの絶対位置座標に基づいて、前記別の基板上の前記複数の区画領域の配列情報を求めることを、さらに含み、
求められた前記別の基板上の前記複数の区画領域の配列情報が、前記基準となる前記複数の区画領域の配列情報として用いられる請求項35に記載の管理方法。 - 第1の層の露光と該第1の層を下地層とする第2の層の露光とにより第1マーク像と対応する第2マーク像との組が、複数所定の位置関係で形成された基板を計測対象とする重ね合わせ計測方法であって、
計測対象の前記基板を、格子部を有する計測面と前記計測面にビームを照射するヘッド部との一方が設けられたステージに搭載し、前記ステージの位置情報を、前記計測面に前記ヘッド部を介して複数のビームを照射し該複数のビームそれぞれの前記計測面からの戻りビームを受光して前記ステージの前記所定平面内の絶対位置座標を含む少なくとも3自由度方向の位置情報を計測可能な位置計測系を用いて計測しつつ、マーク検出系を用いて前記基板上の前記複数組の前記第1マーク像と前記第2マーク像をそれぞれ検出し、前記複数組の前記第1マーク像と前記第2マーク像それぞれの検出結果とそれぞれのマーク像の検出時の前記位置計測系の計測情報とに基づいて、前記基板上の前記複数組の前記第1マーク像と前記第2マーク像それぞれの前記所定平面内の絶対位置座標を求めることと、
相互に組を成す前記第1マーク像と前記第2マーク像との前記絶対位置座標に基づいて、重ね合わせ誤差を求めることと、を含む重ね合わせ計測方法。 - 前記複数の第1マーク像の前記絶対位置座標と前記複数の第2マーク像の前記絶対位置座標とを比較し、比較結果に基づいて、重ね合わせ誤差が、前記第1の層の露光と、前記第2の層の露光とのいずれに主として起因するかを判断することを、さらに含む請求項37に記載の重ね合わせ計測方法。
- 前記絶対位置座標を求めることに先立って、
前記第1の層の露光により前記複数の第1マーク像が所定の位置関係で形成された前記基板上にレジストを塗布することと、
前記第1の層の露光に用いられた露光装置と同じ又は異なる露光装置により、前記基板上の前記第1マーク像に対応して第2マークが形成されたマスクを用いて第2の層の露光を行い、前記基板上に前記所定の位置関係で配置された複数の第2マークの転写像を形成することと、
前記複数の第2マークの転写像が形成された前記基板を現像し、前記第1マーク像と対応する第2マーク像との組が、複数前記所定の位置関係で配置された前記計測対象となる前記基板を作製することと、を含む請求項37又は38に記載の重ね合わせ計測方法。
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