JP5663045B2 - ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 - Google Patents
ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims description 114
- 239000004065 semiconductor Substances 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 44
- 229920005591 polysilicon Polymers 0.000 claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 43
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 239000000969 carrier Substances 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 61
- 230000002441 reversible effect Effects 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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Description
110 活性領域
114 ドリフト領域
114A 露出部分
115 エッジ終端領域
116 電流サージパッド
130 ヘテロ接合障壁領域
Claims (19)
- 第1の導電型を有するドリフト領域と、
前記ドリフト領域上に存在して前記ドリフト領域との間に接合部を形成する接点と、
前記ドリフト領域上の接合障壁領域と、
を含み、前記接合障壁領域が、前記第1の導電型とは逆の第2の導電型を有するとともに、前記ドリフト領域上のヘテロ接合障壁領域を含み、該ヘテロ接合障壁領域が、前記ドリフト領域との間にPNヘテロ接合部を形成し、前記接点と電気的に接触し、
前記接点の下方の前記ドリフト領域に存在して前記接点に電気的に接続されたp型少数キャリア注入パッドを含み、
前記p型少数キャリア注入パッドは、前記PNヘテロ接合部が多数キャリアを伝導し始めるときよりも高い順電圧で少数キャリアを伝導し始めるように構成され、
前記接点と前記ドリフト領域の間の前記接合部は、前記接合障壁領域と前記ドリフト領域の間のPNヘテロ接合部よりも低い順電圧で電流を導通させるように構成されたショットキー接合部を含む、
ことを特徴とする電子デバイス。 - 前記p型少数キャリア注入パッドの幅が、前記接合障壁領域の幅よりも大きい、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記ドリフト領域がn型炭化ケイ素を含み、前記ヘテロ接合障壁領域がp型窒化ガリウムを含む、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記ドリフト領域の表面に存在して前記デバイスの活性領域を内部に定める終端領域をさらに含み、
前記活性領域の総表面積に対する、前記ヘテロ接合障壁領域が占める前記活性領域の表面積の割合が、2%〜40%である、
ことを特徴とする請求項1に記載の電子デバイス。 - 前記活性領域の総表面積に対する、前記ヘテロ接合障壁領域が占める前記活性領域の表面積の割合が、10%〜30%である、
ことを特徴とする請求項4に記載の電子デバイス。 - 前記活性領域の総表面積に対する、前記ヘテロ接合障壁領域が占める前記活性領域の表面積の割合が、20%〜30%である、
ことを特徴とする請求項4に記載の電子デバイス。 - 電子デバイスの形成方法であって、
第1の導電型を有するドリフト領域を設けるステップと、
前記ドリフト領域上に、前記ドリフト領域とは異なる材料を含み、前記ドリフト領域の前記導電型とは逆の導電型を有し、前記ドリフト領域との間にPNヘテロ接合部を形成するヘテロ接合障壁領域を設けるステップと、
前記ドリフト領域上及び前記ヘテロ接合障壁領域上に、前記ドリフト領域との間にショットキー接合部を形成し、前記ヘテロ接合障壁領域との間にオ−ム接合部を形成する接点を設けるステップと、
前記ドリフト領域上に、前記ショットキー接合部に横方向に隣接するガードリング終端領域を設けるステップと、
前記接点の下方の前記ドリフト領域に存在して前記接点に電気的に接続されたp型少数キャリア注入パッドを設けるステップと、
を含み、
前記p型少数キャリア注入パッドは、前記PNヘテロ接合部が多数キャリアを伝導し始めるときよりも高い順電圧で少数キャリアを伝導し始めるように構成され、
前記接点と前記ドリフト領域の間の前記接合部は、前記ヘテロ接合障壁領域と前記ドリフト領域の間のPNヘテロ接合部よりも低い順電圧で電流を導通させるように構成されたショットキー接合部を含む、
ことを特徴とする方法。 - 前記ドリフト領域がn型炭化ケイ素を含み、前記ヘテロ接合障壁領域がp型ポリシリコンを含む、
ことを特徴とする請求項7に記載の方法。 - 前記ヘテロ接合障壁領域を設けるステップが、前記ドリフト領域内に凹部をエッチングするステップと、前記凹部内にポリシリコン層を堆積させるステップと、前記ポリシリコン層を、前記ドリフト領域の導電型とは逆の導電型を有するようにドープするステップと、前記ポリシリコン層をパターニングするステップとを含む、
ことを特徴とする請求項7に記載の方法。 - 前記ドリフト領域上に存在して前記接合部に横方向に隣接するガードリング終端領域をさらに含み、該ガードリング終端領域が、第2のヘテロ接合障壁領域を含む、
ことを特徴とする請求項1に記載の電子デバイス。 - n型ドリフト領域を含む炭化ケイ素層と、
前記ドリフト領域との間にショットキー接合部を形成する接点と、
前記炭化ケイ素層上のp型接合障壁領域であって、前記ドリフト領域との間にPNヘテロ接合部を形成するp型ポリシリコン領域を含み、前記p型接合障壁領域は、前記接点と電気的に接続される、p型接合障壁領域と、
前記接点の下方の前記ドリフト領域に存在して前記接点に電気的に接続されたp型少数キャリア注入パッドと
を含み、
前記p型ポリシリコン領域及び前記p型少数キャリア注入パッドは、前記ドリフト領域の上面よりも上に前記接点内部に突出し、
前記p型少数キャリア注入パッドは、前記ドリフト領域の上面よりも上に、前記p型ポリシリコン領域よりも更に前記接点内部に突出した、
ことを特徴とする電子デバイス。 - 前記接点と前記ドリフト領域の間の前記ショットキー接合部が、前記接合障壁領域と前記ドリフト領域の間のPNヘテロ接合部よりも低い順電圧で電流を導通させるように構成される、
ことを特徴とする請求項11に記載の電子デバイス。 - 前記接点が、前記p型ポリシリコン領域へのオ−ム接点を形成し、前記接合障壁領域と前記ドリフト領域の間の前記PNヘテロ接合部が、前記ショットキー接合部のターンオン電圧よりも高い順電圧であって、前記接合障壁領域と前記ドリフト領域の間の前記PNヘテロ接合部が前記ドリフト領域内に少数キャリアを注入し始める低い電圧で多数キャリアを伝導し始めるように構成される、
ことを特徴とする請求項12に記載の電子デバイス。 - 前記接点に横方向に隣接する前記炭化ケイ素層の表面にガードリング終端領域をさらに含み、該ガードリング終端領域が、前記ドリフト領域上の第2のp型ポリシリコン領域を含み、該第2のp型ポリシリコン領域が、ゼロバイアス条件下で前記接点から電気的に絶縁される、
ことを特徴とする請求項11に記載の電子デバイス。 - 前記炭化ケイ素層の前記表面に、前記ドリフト領域の導電型とは逆の導電型を有する接合終端領域をさらに含み、該接合終端領域内に、前記第2のp型ポリシリコン領域が広がる、
ことを特徴とする請求項14に記載の電子デバイス。 - 前記接合障壁領域が、前記ドリフト領域内の複数のp型ポリシリコン領域を含む、
ことを特徴とする請求項11に記載の電子デバイス。 - 前記少数キャリア注入パッドの、前記炭化ケイ素層の主表面に平行な水平面における表
面積が、前記接合障壁領域内の前記複数のp型ポリシリコン領域のうちの1つの水平面に
おける表面積よりも大きい、
ことを特徴とする請求項16に記載の電子デバイス。 - 前記少数キャリア注入パッドの、前記炭化ケイ素層の主表面に平行な水平面における表
面積が、前記接点の下方にある前記ドリフト領域の水平面内における表面積の少なくとも
10%である、
ことを特徴とする請求項16に記載の電子デバイス。 - 前記接点が第1の接点を含み、前記デバイスが、前記接点とは反対側の前記ドリフト領域上のn+炭化ケイ素接触層と、該接触層上の第2の接点とをさらに含む、
ことを特徴とする請求項1に記載の電子デバイス。
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