JP5452914B2 - 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード - Google Patents
少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード Download PDFInfo
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- JP5452914B2 JP5452914B2 JP2008511363A JP2008511363A JP5452914B2 JP 5452914 B2 JP5452914 B2 JP 5452914B2 JP 2008511363 A JP2008511363 A JP 2008511363A JP 2008511363 A JP2008511363 A JP 2008511363A JP 5452914 B2 JP5452914 B2 JP 5452914B2
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 213
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 195
- 230000004888 barrier function Effects 0.000 title claims description 84
- 238000002347 injection Methods 0.000 title description 10
- 239000007924 injection Substances 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 description 33
- 230000000903 blocking effect Effects 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000007943 implant Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (9)
- 炭化シリコンショットキーダイオードであって、
炭化シリコンドリフト領域と、
前記炭化シリコンドリフト領域上のショットキーコンタクトと、
前記ダイオードの前記炭化シリコンドリフト領域内に配置された炭化シリコン接合障壁領域と
を含み、前記接合障壁領域は、
前記ダイオードの前記ドリフト領域内にあって第1のドーピング濃度を有する第1の炭化シリコン領域と、
前記ドリフト領域内にあって、前記第1の炭化シリコン領域と前記ショットキーダイオードの前記ショットキーコンタクトとの間に配置され、前記第1の炭化シリコン領域および前記ショットキーコンタクトと電気的に接触し、前記第1のドーピング濃度よりも低い第2のドーピング濃度を有し、前記ショットキーコンタクトとの抵抗性接合を形成する第2の炭化シリコン領域と
を含むことを特徴とする炭化シリコンショットキーダイオード。 - 前記ドリフト領域はn型炭化シリコンを含み、前記第1および第2の領域はp型炭化シリコンを含むことを特徴とする請求項1に記載の炭化シリコンショットキーダイオード。
- 前記第2の炭化シリコン領域は、前記ドリフト領域内に約0.01から0.5μm延び、前記第1の炭化シリコン領域は、前記ドリフト領域内に0.1から1μm延びることを特徴とする請求項2に記載の炭化シリコンショットキーダイオード。
- 前記第2の炭化シリコン領域は、1×1015cm−3から5×1018cm−3の表面ドーピング濃度を有することを特徴とする請求項2に記載の炭化シリコンショットキーダイオード。
- 前記ドリフト領域は、第1のn型炭化シリコンエピタキシャル層を含むことを特徴とする請求項2に記載の炭化シリコンショットキーダイオード。
- 前記第1のn型炭化シリコンエピタキシャル層のキャリア濃度よりも高いキャリア濃度を有するn型炭化シリコン基板をさらに含み、前記第1のn型炭化シリコンエピタキシャル層は前記n型炭化シリコン基板上に配置されていることを特徴とする請求項5に記載の炭化シリコンショットキーダイオード。
- 前記第1の炭化シリコンエピタキシャル層と前記n型炭化シリコン基板の間に配置された第2のn型炭化シリコンエピタキシャル層をさらに含み、前記第2のn型炭化シリコンエピタキシャル層は、前記第1のn型炭化シリコンエピタキシャル層よりも高いキャリア濃度を有することを特徴とする請求項6に記載の炭化シリコンショットキーダイオード。
- 前記第1のn型炭化シリコンエピタキシャル層とは反対側の前記炭化シリコン基板上にオーミックコンタクトをさらに含むことを特徴とする請求項6に記載の炭化シリコンショットキーダイオード。
- 前記炭化シリコン接合障壁領域を取り囲む複数のフローティングフィールドリングをさらに含むことを特徴とする請求項1に記載の炭化シリコンショットキーダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/126,816 US8901699B2 (en) | 2005-05-11 | 2005-05-11 | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US11/126,816 | 2005-05-11 | ||
PCT/US2006/018260 WO2006122252A2 (en) | 2005-05-11 | 2006-05-10 | Silicon carbide junction barrier schottky diodes with suppressed minority carrier injection |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012002273A Division JP5616911B2 (ja) | 2005-05-11 | 2012-01-10 | 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008541459A JP2008541459A (ja) | 2008-11-20 |
JP5452914B2 true JP5452914B2 (ja) | 2014-03-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008511363A Active JP5452914B2 (ja) | 2005-05-11 | 2006-05-10 | 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード |
JP2012002273A Active JP5616911B2 (ja) | 2005-05-11 | 2012-01-10 | 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012002273A Active JP5616911B2 (ja) | 2005-05-11 | 2012-01-10 | 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード |
Country Status (7)
Country | Link |
---|---|
US (1) | US8901699B2 (ja) |
EP (1) | EP1880423B1 (ja) |
JP (2) | JP5452914B2 (ja) |
KR (1) | KR101503527B1 (ja) |
CN (1) | CN101223647B (ja) |
TW (1) | TWI422029B (ja) |
WO (1) | WO2006122252A2 (ja) |
Families Citing this family (99)
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US20060255423A1 (en) | 2006-11-16 |
CN101223647B (zh) | 2010-11-03 |
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US8901699B2 (en) | 2014-12-02 |
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CN101223647A (zh) | 2008-07-16 |
JP2012070012A (ja) | 2012-04-05 |
TWI422029B (zh) | 2014-01-01 |
EP1880423A2 (en) | 2008-01-23 |
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