JP6203703B2 - ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 - Google Patents
ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 Download PDFInfo
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- JP6203703B2 JP6203703B2 JP2014247217A JP2014247217A JP6203703B2 JP 6203703 B2 JP6203703 B2 JP 6203703B2 JP 2014247217 A JP2014247217 A JP 2014247217A JP 2014247217 A JP2014247217 A JP 2014247217A JP 6203703 B2 JP6203703 B2 JP 6203703B2
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- 230000004888 barrier function Effects 0.000 title claims description 108
- 239000004065 semiconductor Substances 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 229910010271 silicon carbide Inorganic materials 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 32
- 229920005591 polysilicon Polymers 0.000 description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 30
- 239000000969 carrier Substances 0.000 description 13
- 230000002441 reversible effect Effects 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Description
これらの用語は、要素を互いに区別するために使用するものにすぎない。例えば、本発明の範囲から逸脱することなく、第1の領域を第2の領域と呼ぶことができ、同様に第2の領域を第1の領域と呼ぶことができる。本明細書で使用する「及び/又は(and/or)」という用語は、関連する記載項目の1又はそれ以上のありとあらゆる組み合わせを含む。
ショットキー接点118は、複数のヘテロ接合障壁領域130にも接する。
電流サージパッド116及びヘテロ接合障壁領域130は、ドリフト領域114とは逆の導電型を有しているので、ヘテロ接合障壁領域130は、ドリフト領域114との間にPN接合部J3を形成し、電流サージパッド116は、ドリフト領域114との間にPN接合部J5を形成する。
110 活性領域
114 ドリフト領域
114A 露出部分
115 エッジ終端領域
116 電流サージパッド
130 ヘテロ接合障壁領域
Claims (8)
- 活性領域を伴う第1の表面を有するドリフト層であって、該ドリフト層はシリコンを含み、第1の導電型のドーピング物質がドープされた、ドリフト層と、
前記活性領域にほぼ横方向に隣接するエッジ終端領域であって、前記第1の表面から前記ドリフト層に及ぶエッジ終端凹部を有する、エッジ終端領域と、
前記第1の表面の前記活性領域の上方にあり、ショットキー接合部を形成するためのショットキー層と、
前記エッジ終端凹部の底面に形成された第1のガードリングと第2のガードリングを含むエッジ終端構造と、
前記ショットキー接合部の下方かつ前記ドリフト層に形成された接合障壁要素の配列と、
前記エッジ終端領域に位置した注入領域と
を含み、
前記第1のガードリング及び前記第2のガードリングのうちの一方は、部分的に前記注入領域にあり、前記第1のガードリング及び前記第2のガードリングのうちの他方は、完全に前記注入領域にある、
ことを特徴とするショットキーダイオード。 - 前記エッジ終端凹部は、実質的に前記活性領域付近に延びている、
ことを特徴とする請求項1に記載のショットキーダイオード。 - 前記ショットキー層は、チタン、クロム及びアルミニウムからなる一群から少なくとも1つを含む、前記障壁の高さが低い金属から形成された、
ことを特徴とする請求項1に記載のショットキーダイオード。 - 前記接合障壁要素の配列におけるそれぞれの接合障壁要素は、前記接合障壁要素の配列における他の要素と実質的に同じである、
ことを特徴とする請求項3に記載のショットキーダイオード。 - 前記接合障壁要素の配列における少なくとも第1の接合障壁要素は、前記接合障壁要素の配列における少なくとも第2の接合障壁要素と比べて、サイズ又は形状で実質的に異なる、
ことを特徴とする請求項3に記載のショットキーダイオード。 - 前記接合障壁要素の配列における少なくとも特定の接合障壁要素は、引き伸ばされたストライプを更に含む、
ことを特徴とする請求項3に記載のショットキーダイオード。 - 前記接合障壁要素の配列における少なくとも特定の接合障壁要素は、実質的に前記第1の表面を囲む、
ことを特徴とする請求項3に記載のショットキーダイオード。 - 前記ドリフト層の前記第1の表面は、前記活性領域における複数の接合障壁要素凹部であって、前記接合障壁要素の配列の少なくとも特定の接合障壁要素は、前記複数の接合障壁要素凹部の対応する接合障壁要素付近の前記ドリフト層に延びているドープ領域である、複数の接合障壁要素凹部を含み、
前記ドープ領域は、前記第1の導電型とは逆の第2の導電型のドーピング物質でドープされた、
ことを特徴とする請求項1に記載のショットキーダイオード。
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US12/719,412 | 2010-03-08 | ||
US12/719,412 US9117739B2 (en) | 2010-03-08 | 2010-03-08 | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
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JP2012557150A Division JP5663045B2 (ja) | 2010-03-08 | 2011-03-07 | ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 |
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JP2015065469A JP2015065469A (ja) | 2015-04-09 |
JP6203703B2 true JP6203703B2 (ja) | 2017-09-27 |
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JP2014247217A Active JP6203703B2 (ja) | 2010-03-08 | 2014-12-05 | ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 |
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US (2) | US9117739B2 (ja) |
EP (1) | EP2545587B1 (ja) |
JP (2) | JP5663045B2 (ja) |
WO (1) | WO2011112504A1 (ja) |
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JP5787655B2 (ja) * | 2010-11-26 | 2015-09-30 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5406171B2 (ja) * | 2010-12-08 | 2014-02-05 | ローム株式会社 | SiC半導体装置 |
US8963276B2 (en) * | 2010-12-28 | 2015-02-24 | Mitsubishi Electric Corporation | Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells |
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JP6072799B2 (ja) * | 2011-09-09 | 2017-02-01 | クリー インコーポレイテッドCree Inc. | 非注入障壁領域を含む半導体デバイス及びその製造方法 |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
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