JP5415679B2 - 半導体デバイス及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 239000002019 doping agent Substances 0.000 claims description 49
- 230000002441 reversible effect Effects 0.000 claims description 45
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 35
- 230000015556 catabolic process Effects 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
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- 229910052796 boron Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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Description
12 n型基板
14 nドリフト層
16 p+領域
18 金属アノード接点
20 カソード接点
100 ダイオード
110 活性領域
114 ドリフト層
114A 露出部分
115 縁部終端領域
116 高濃度ドープ領域
118 アノード接点
120 カソード接点
130 低濃度ドープ領域
200 ダイオード
228 第1の部分
238 第2の部分
218 アノード接点
300 ダイオード
330 アイランド(低濃度ドープ領域)
Claims (32)
- 第1の導電型で、活性領域がその中に構成された表面を有する半導体層と、
前記活性領域内に配置され、前記第1の導電型とは反対の第2の導電型で、第1のドーパント濃度を有し、前記活性領域内に前記半導体層の複数の露出部分を構成する複数の離隔された第1の低濃度ドープ領域と、
前記半導体層の活性領域内であって前記複数の第1の低濃度ドープ領域の間に配置され、前記第2の導電型で、前記第1のドーパント濃度よりも高い第2のドーパント濃度を有する第2の高濃度ドープ領域と、
前記半導体層の前記表面上に配置され、該半導体層の前記構成された露出部分とともにショットキー接合部を構成し、かつ前記第2のドープ領域とともにオーム接点を構成する金属層と
を備え、
前記複数の第1のドープ領域は、該複数の第1のドープ領域と前記半導体層との間のp−n接合部のパンチスルーが、前記金属層と前記半導体層の前記露出部分との間の前記ショットキー接合部の降伏よりも低い電圧で起こるような厚さ及びドーパント濃度を有することにより制御された逆降伏特性を提供するように構成され、
前記第2の高ドープ領域と前記半導体層との間のp−n接合部のターンオン電圧が、前記金属層と前記半導体層の前記露出部分との間の前記ショットキー接合部のターンオン電圧よりも高いことにより電流サージを扱う能力を提供するように構成されていることを特徴とする半導体デバイス。 - 前記金属層は、前記半導体層の前記露出部分及び前記複数の第1のドープ領域に接触する第1の金属領域と、前記第2のドープ領域に接触し、前記第1の金属領域に直接接触する第2の金属領域とを備え、前記第1の金属領域は、前記第2の金属領域とは異なる金属を含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記第1の金属領域は、アルミニウム、チタン及び/又はニッケルを含み、前記第2の金属領域は、アルミニウム、チタン及び/又はニッケルを含むことを特徴とする請求項2に記載の半導体デバイス。
- 前記半導体層は、シリコンカーバイド半導体層を備えていることを特徴とする請求項2に記載の半導体デバイス。
- 前記複数の第1のドープ領域は、1×1017から1×1018cm−3のドーパント濃度を有するp型シリコンカーバイドを含み、前記第2のドープ領域は、5×1018cm−3よりも高いドーパント濃度を有するp型シリコンカーバイドを含むことを特徴とする請求項4に記載の半導体デバイス。
- 前記第2のドープ領域は、前記半導体層内に複数構成され、前記複数の第1のドープ領域は、前記半導体層内にストライプとして構成されていることを特徴とする請求項1に記載の半導体デバイス。
- 前記第2のドープ領域は、前記半導体層内に複数構成され、前記複数の第1のドープ領域は、前記半導体層内にアイランドとして構成されていることを特徴とする請求項1に記載の半導体デバイス。
- 前記半導体層は、シリコンカーバイドからなるエピタキシャル層を備えていることを特徴とする請求項1に記載の半導体デバイス。
- 前記第1の導電型を有するシリコンカーバイド基板をさらに備え、前記半導体層は、前記基板上にあることを特徴とする請求項8に記載の半導体デバイス。
- 前記オーム接点は、第1のオーム接点を備え、前記半導体デバイスは、前記基板上に第2のオーム接点をさらに備えていることを特徴とする請求項9に記載の半導体デバイス。
- 前記第1の導電型はn型であり、前記第2の導電型はp型であることを特徴とする請求項1に記載の半導体デバイス。
- 前記第1の導電型はp型であり、前記第2の導電型はn型であることを特徴とする請求項1に記載の半導体デバイス。
- 前記複数の第1のドープ領域及び前記第2のドープ領域は、前記半導体層の前記表面に配置され、前記複数の第1のドープ領域と前記第2のドープ領域とによって占有される表面積の、前記活性領域の全表面積に対する比は0.3であることを特徴とする請求項1に記載の半導体デバイス。
- 縁部終端領域をさらに備え、前記複数の第1のドープ領域は、該複数の第1のドープ領域と前記半導体層との間のp−n接合部のパンチスルーが、前記縁部終端領域の降伏電圧よりも低い電圧で起こるような厚さ及びドーパント濃度を有することを特徴とする請求項1に記載の半導体デバイス。
- 第1の導電型を有する半導体層と、
該半導体層上に配置され、該半導体層とともにショットキー接合部を形成する金属接点と、
第1のドーパント濃度を有する、前記半導体層内の第1の半導体領域であって、前記第1の半導体領域及び前記半導体層は、前記ショットキー接合部と並列に第1のp−n接合部を形成し、前記ショットキー接合部を通る逆漏れ電流を制限するために該ショットキー接合部に逆バイアスがかけられたとき、該ショットキー接合部に隣接する前記半導体層内に空乏領域を発生させるように構成され、前記第1のp−n接合部がさらに、該第1のp−n接合部のパンチスルーが前記ショットキー接合部の降伏電圧よりも低い電圧で起こるように構成される第1の半導体領域と、
前記第1の半導体領域の前記第1のドーパント濃度よりも高い第2のドーパント濃度を有する第2の半導体領域であって、前記ショットキー接合部及び前記第1のp−n接合部と並列に第2のp−n接合部を形成し、前記第2のp−n接合部は、前記ショットキー接合部よりも高い順電圧でオンになるように構成されている第2の半導体領域と、
を備えていることを特徴とする半導体デバイス。 - 前記半導体層は、シリコンカーバイド半導体層を備えていることを特徴とする請求項15に記載の半導体デバイス。
- 前記第1の半導体領域は、1×1017から1×1018cm−3のドーパント濃度を有するp型シリコンカーバイドを含み、前記第2の半導体領域は、5×1018cm−3よりも高いドーパント濃度を有するp型シリコンカーバイドを含むことを特徴とする請求項16に記載の半導体デバイス。
- 前記第1の半導体領域は、前記半導体層内に複数の第1のドープ領域を備え、前記第2の半導体領域は、前記半導体層内に複数の第2のドープ領域を備えていることを特徴とする請求項15に記載の半導体デバイス。
- 前記複数の第1のドープ領域は、前記半導体層内にストライプとして構成されていることを特徴とする請求項18に記載の半導体デバイス。
- 前記複数の第1のドープ領域は、前記半導体層内にアイランドとして構成されていることを特徴とする請求項18に記載の半導体デバイス。
- 半導体層内に複数の第1のドープ領域を形成するステップであって、前記半導体層と前記複数の第1のドープ領域とがp−n接合部を形成するように、前記半導体層が第1の導電型を有し、前記複数の第1のドープ領域が前記第1の導電型とは反対の第2の導電型を有するステップと、
前記半導体層内に第2のドープ領域を形成するステップであって、前記第2のドープ領域が、前記第2の導電型を有し、前記複数の第1のドープ領域の前記ドーパント濃度よりも高いドーパント濃度とを有するステップと、
前記半導体層上に金属層を形成するステップであって、前記金属層が、前記半導体層と共にショットキー接合部を形成し、前記複数の第1のドープ領域と接触するステップとを有し、
前記複数の第1のドープ領域が、前記ショットキー接合部に逆バイアスがかけられたとき、前記p−n接合部のパンチスルーが、前記金属層と前記半導体層との間の前記ショットキー接合部の降伏電圧よりも低い電圧で起こるような厚さ及びドーパント濃度を有し、
前記第2のドープ領域と前記半導体層との間の第2のp−n接合部が、前記金属層と前記半導体層との間の前記ショットキー接合部のターンオン電圧よりも高い電圧でオンするように構成されることを特徴とする半導体デバイスの製造方法。 - 前記金属層を形成する前記ステップは、
前記第2のドープ領域上に第1の金属層を形成するステップであって、前記第1の金属層は、前記第2のドープ領域とともにオーム接点を形成するステップと、
前記半導体層及び前記複数の第1のドープ領域上に第2の金属層を形成するステップであって、前記第2の金属層は、前記半導体層とともに前記ショットキー接合部を形成するステップとを含むことを特徴とする請求項21に記載の半導体デバイスの製造方法。 - 前記半導体層は、n型シリコンカーバイドを含み、前記複数の第1のドープ領域は、1×1017から1×1018cm−3のドーパント濃度を有するp型シリコンカーバイドを含み、前記第2のドープ領域は、5×1018cm−3よりも高いドーパント濃度を有するp型シリコンカーバイドを含むことを特徴とする請求項22に記載の半導体デバイスの製造方法。
- 前記第2のドープ領域を形成するステップは、前記半導体層内に複数の第2のドープ領域を形成するステップを含むことを特徴とする請求項21に記載の半導体デバイスの製造方法。
- 前記複数の第1のドープ領域は、前記半導体層内にストライプとして構成されることを特徴とする請求項24に記載の半導体デバイスの製造方法。
- 前記複数の第1のドープ領域は、前記半導体層内にアイランドとして構成されることを特徴とする請求項24に記載の半導体デバイスの製造方法。
- 前記複数の第1のドープ領域及び前記第2のドープ領域は、前記半導体層の表面に形成され、前記複数の第1のドープ領域と前記第2のドープ領域とによって占有される表面積の、前記半導体デバイスの活性領域の全表面積に対する比は、0.3であることを特徴とする請求項21に記載の半導体デバイスの製造方法。
- 前記半導体層中に少なくとも2つの第2のドープ領域をさらに備え、前記複数の離隔された第1のドープ領域は、前記少なくとも2つの第2のドープ領域の間にあることを特徴とする請求項1に記載の半導体デバイス。
- その内側に第2の活性領域を構成する縁部終端領域をさらに備え、前記複数の離隔された第1のドープ領域が、前記第2の活性領域内にあることを特徴とする請求項28に記載の半導体デバイス。
- 前記複数の第1のドープ領域は、前記半導体層内にアイランドとして構成されることを特徴とする請求項1に記載の半導体デバイス。
- 前記半導体層内の複数の半導体領域であって、前記ショットキー接合部と並列に第3のp−n接合部を形成し、前記ショットキー接合部を通る逆漏れ電流を制限するために該ショットキー接合部に逆バイアスがかけられたとき、該ショットキー接合部に隣接する前記半導体層内に空乏領域を発生させるように構成される複数の半導体領域をさらに備え、前記第3のp−n接合部がさらに、該第3のp−n接合部のパンチスルーが前記ショットキー接合部の降伏電圧よりも低い電圧で起こるように構成されていることを特徴とする請求項15に記載の半導体デバイス。
- その内側にその活性領域を構成する縁部終端領域をさらに備え、前記複数の半導体領域が、前記縁部終端領域により構成される前記活性領域内にあることを特徴とする請求項31に記載の半導体デバイス。
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-
2006
- 2006-08-01 US US11/496,842 patent/US7728402B2/en active Active
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2007
- 2007-07-11 EP EP11187310.5A patent/EP2418685B1/en active Active
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EP2418685B1 (en) | 2020-05-06 |
EP2418685A2 (en) | 2012-02-15 |
JP2013030814A (ja) | 2013-02-07 |
EP1885000A2 (en) | 2008-02-06 |
US20080029838A1 (en) | 2008-02-07 |
US8330244B2 (en) | 2012-12-11 |
US7728402B2 (en) | 2010-06-01 |
EP1885000B1 (en) | 2018-08-22 |
EP2418685A3 (en) | 2012-05-23 |
EP1885000A3 (en) | 2009-03-18 |
US20090315036A1 (en) | 2009-12-24 |
JP2008042198A (ja) | 2008-02-21 |
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