JP5007465B2 - コンデンサ装置の形成方法 - Google Patents
コンデンサ装置の形成方法 Download PDFInfo
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- JP5007465B2 JP5007465B2 JP2006542721A JP2006542721A JP5007465B2 JP 5007465 B2 JP5007465 B2 JP 5007465B2 JP 2006542721 A JP2006542721 A JP 2006542721A JP 2006542721 A JP2006542721 A JP 2006542721A JP 5007465 B2 JP5007465 B2 JP 5007465B2
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- 239000003990 capacitor Substances 0.000 title claims description 75
- 238000000034 method Methods 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 103
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 47
- 238000005530 etching Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 21
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 166
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 230000002093 peripheral effect Effects 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 25
- 239000004020 conductor Substances 0.000 description 15
- 230000000873 masking effect Effects 0.000 description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 230000014759 maintenance of location Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000012777 electrically insulating material Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007847 structural defect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 description 1
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013075 data extraction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
群と、その片隣りの行に沿って配置されたコンデンサ群)を接続する行82を形成する。開口部32、34、36、38、40、42、44、46、48、50、52及び54中の導電層60の一部が図8中破線で示されているが、これら破線は前記導電層の一部がマスキング材80で覆われていることを示している。マスク80の例示的材料としてはフォトレジストがあり、かかる材料はフォトリトグラフィー加工を用いて図示されたパターンに作製される。パターン化されたマスク80の図示された形状は、本発明方法において利用可能な多数のパターンのうちの一つである。図示されたパターン化されたマスク80の形状は図8の図に対して水平方向へ延びるストライプ状になっている。別の例示的形状(図示せず)において、マスク材80のパターン化されたストライプを特定の容器を全体的に覆うように拡げて図8の図に対して斜めに延ばし、及び/または図8の図に対して縦方向へ延ばすことも可能である。
Claims (4)
- 複数のコンデンサ装置を形成する方法であって、
基板上へ第一材料を含む構造体を設ける工程と、
前記第一材料の少なくとも一部上へ保持構造体を形成する工程と、
前記第一材料中に延びる開口部を形成する工程と、
第一導電層を用いて前記開口部内に導電性構造体を形成する工程であって、前記導電性構造体は前記第一材料に沿った外側側壁を有する、工程と、
前記保持構造体の下方から前記第一材料の少なくとも一部を除去して前記導電性構造体の前記外側側壁の少なくとも一部を露出させる工程であって、前記第一材料の除去中に前記保持構造体が前記導電性構造体を保持する、工程と、
前記外側側壁の露出部分に沿ってコンデンサ誘電材料を形成する工程と、
前記コンデンサ誘電材料上へ第二導電層を形成する工程とを含み、
前記第一材料は硼燐珪酸ガラスを含み、
前記第一材料の少なくとも一部が等方性エッチングによって除去され、
前記保持構造体は窒化珪素と第二材料とを含み、前記等方性エッチング処理中における前記第二材料に対する硼燐珪酸ガラスの選択性が窒化珪素に対する硼燐珪酸ガラスの選択性よりも高く、
前記第二材料の第一部分が前記窒化珪素の上にあり、
前記第二材料の第二部分が前記窒化珪素の下にあり、
前記第二材料の第三部分が前記第一部分、前記第二部分、及び前記窒化珪素と物理的に接触していることを特徴とする方法。 - 前記第二材料は多結晶質珪素を含むことを特徴とする請求項1記載の方法。
- 前記多結晶質珪素が前記窒化珪素の上部及び下部にあることを特徴とする請求項2記載の方法。
- 前記第一材料の少なくとも一部を除去する工程の後、前記保持構造体の少なくとも一部を除去する工程をさらに含むことを特徴とする請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/733,181 | 2003-12-10 | ||
US10/733,181 US7125781B2 (en) | 2003-09-04 | 2003-12-10 | Methods of forming capacitor devices |
PCT/US2004/040252 WO2005062349A1 (en) | 2003-12-10 | 2004-12-01 | Containing capacitors and method of forming |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012044522A Division JP2012146993A (ja) | 2003-12-10 | 2012-02-29 | コンデンサ装置の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007512716A JP2007512716A (ja) | 2007-05-17 |
JP5007465B2 true JP5007465B2 (ja) | 2012-08-22 |
Family
ID=34710430
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542721A Expired - Fee Related JP5007465B2 (ja) | 2003-12-10 | 2004-12-01 | コンデンサ装置の形成方法 |
JP2012044522A Ceased JP2012146993A (ja) | 2003-12-10 | 2012-02-29 | コンデンサ装置の形成方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012044522A Ceased JP2012146993A (ja) | 2003-12-10 | 2012-02-29 | コンデンサ装置の形成方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7125781B2 (ja) |
EP (1) | EP1700332B1 (ja) |
JP (2) | JP5007465B2 (ja) |
KR (1) | KR100868812B1 (ja) |
CN (1) | CN100405541C (ja) |
TW (1) | TWI252511B (ja) |
WO (1) | WO2005062349A1 (ja) |
Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506944B1 (ko) * | 2003-11-03 | 2005-08-05 | 삼성전자주식회사 | 지지층 패턴들을 채택하는 복수개의 커패시터들 및 그제조방법 |
US7067385B2 (en) | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
US7125781B2 (en) * | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
EP1732134B1 (en) * | 2004-02-27 | 2012-10-24 | National University Corporation Tohoku Unversity | Solid-state imagine device, line sensor, optical sensor, and method for operating solid-state imaging device |
DE102004021401B4 (de) * | 2004-04-30 | 2011-02-03 | Qimonda Ag | Herstellungsverfahren für ein Stapelkondensatorfeld |
US20070037349A1 (en) * | 2004-04-30 | 2007-02-15 | Martin Gutsche | Method of forming electrodes |
KR100533959B1 (ko) * | 2004-06-30 | 2005-12-06 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US20060046055A1 (en) * | 2004-08-30 | 2006-03-02 | Nan Ya Plastics Corporation | Superfine fiber containing grey dope dyed component and the fabric made of the same |
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
KR100655751B1 (ko) * | 2004-10-01 | 2006-12-11 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US7320911B2 (en) | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7557015B2 (en) * | 2005-03-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
EP1722466A1 (en) * | 2005-05-13 | 2006-11-15 | STMicroelectronics S.r.l. | Method and relative circuit for generating a control voltage of a synchronous rectifier |
US7544563B2 (en) * | 2005-05-18 | 2009-06-09 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7517753B2 (en) * | 2005-05-18 | 2009-04-14 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7999299B2 (en) * | 2005-06-23 | 2011-08-16 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor for peripheral circuit |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7226845B2 (en) | 2005-08-30 | 2007-06-05 | Micron Technology, Inc. | Semiconductor constructions, and methods of forming capacitor devices |
US7713813B2 (en) * | 2005-08-31 | 2010-05-11 | Micron Technology, Inc. | Methods of forming capacitors |
DE102005042524A1 (de) * | 2005-09-07 | 2007-03-08 | Infineon Technologies Ag | Verfahren zur Herstellung von Stapelkondensatoren für dynamische Speicherzellen |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US20070207622A1 (en) * | 2006-02-23 | 2007-09-06 | Micron Technology, Inc. | Highly selective doped oxide etchant |
US7557013B2 (en) * | 2006-04-10 | 2009-07-07 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7666797B2 (en) * | 2006-08-17 | 2010-02-23 | Micron Technology, Inc. | Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7902081B2 (en) | 2006-10-11 | 2011-03-08 | Micron Technology, Inc. | Methods of etching polysilicon and methods of forming pluralities of capacitors |
KR100891647B1 (ko) * | 2007-02-01 | 2009-04-02 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
US7785962B2 (en) | 2007-02-26 | 2010-08-31 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
KR20080088276A (ko) * | 2007-03-29 | 2008-10-02 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
DE102007022748B4 (de) * | 2007-05-15 | 2009-03-05 | Qimonda Ag | Verfahren zur Strukturierung eines Materials und strukturiertes Material |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
KR100885922B1 (ko) * | 2007-06-13 | 2009-02-26 | 삼성전자주식회사 | 반도체 소자 및 그 반도체 소자 형성방법 |
KR100949897B1 (ko) * | 2007-06-29 | 2010-03-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR101357303B1 (ko) * | 2007-07-10 | 2014-01-28 | 삼성전자주식회사 | 반도체 소자 및 그 반도체 소자 제조방법 |
US7682924B2 (en) | 2007-08-13 | 2010-03-23 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7829410B2 (en) * | 2007-11-26 | 2010-11-09 | Micron Technology, Inc. | Methods of forming capacitors, and methods of forming DRAM arrays |
JP2009141073A (ja) * | 2007-12-05 | 2009-06-25 | Elpida Memory Inc | 半導体装置の製造方法及び半導体装置 |
US8388851B2 (en) | 2008-01-08 | 2013-03-05 | Micron Technology, Inc. | Capacitor forming methods |
JP2009164535A (ja) * | 2008-01-10 | 2009-07-23 | Elpida Memory Inc | 半導体装置、及びその製造方法 |
KR100929642B1 (ko) * | 2008-02-20 | 2009-12-03 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
US7700469B2 (en) * | 2008-02-26 | 2010-04-20 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
KR20090098550A (ko) * | 2008-03-14 | 2009-09-17 | 삼성전자주식회사 | 커패시터를 구비하는 반도체 소자의 제조 방법 및 이에의해 제조된 반도체 소자 |
US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
US7759193B2 (en) | 2008-07-09 | 2010-07-20 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7892937B2 (en) | 2008-10-16 | 2011-02-22 | Micron Technology, Inc. | Methods of forming capacitors |
US8273634B2 (en) | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
US8796155B2 (en) | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
US8247302B2 (en) | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
JP5679628B2 (ja) * | 2008-12-16 | 2015-03-04 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
US7951668B2 (en) * | 2009-01-14 | 2011-05-31 | Powerchip Semiconductor Corp. | Process for fabricating crown capacitors of dram and capacitor structure |
KR20100086795A (ko) * | 2009-01-23 | 2010-08-02 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8058126B2 (en) | 2009-02-04 | 2011-11-15 | Micron Technology, Inc. | Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same |
KR101589912B1 (ko) * | 2009-03-20 | 2016-02-01 | 삼성전자주식회사 | 커패시터 및 이의 제조 방법 |
US8268543B2 (en) | 2009-03-23 | 2012-09-18 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US7939877B2 (en) * | 2009-03-23 | 2011-05-10 | Micron Technology, Inc. | DRAM unit cells, capacitors, methods of forming DRAM unit cells, and methods of forming capacitors |
JP2010245374A (ja) * | 2009-04-08 | 2010-10-28 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
JP2010287716A (ja) * | 2009-06-11 | 2010-12-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
TWI440190B (zh) * | 2009-09-11 | 2014-06-01 | Inotera Memories Inc | 堆疊式隨機動態存取記憶體之雙面電容之製造方法 |
KR101616045B1 (ko) * | 2009-11-19 | 2016-04-28 | 삼성전자주식회사 | 반도체 소자 제조방법 |
US8298908B2 (en) * | 2010-02-11 | 2012-10-30 | International Business Machines Corporation | Structure and method for forming isolation and buried plate for trench capacitor |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
KR20120045461A (ko) * | 2010-10-29 | 2012-05-09 | 삼성전자주식회사 | 아일랜드형 지지 패턴들을 갖는 반도체 소자 |
US8283236B2 (en) | 2011-01-20 | 2012-10-09 | Micron Technology, Inc. | Methods of forming capacitors |
KR101780050B1 (ko) * | 2011-02-28 | 2017-09-20 | 삼성전자주식회사 | 반도체 기억 소자 및 반도체 기억 소자의 형성 방법 |
US20120235274A1 (en) * | 2011-03-14 | 2012-09-20 | Doyle Brian S | Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same |
KR101800419B1 (ko) | 2011-03-14 | 2017-11-23 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
JP2013030557A (ja) * | 2011-07-27 | 2013-02-07 | Elpida Memory Inc | 半導体装置の製造方法 |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
KR20130049393A (ko) * | 2011-11-04 | 2013-05-14 | 에스케이하이닉스 주식회사 | 반도체 장치 제조방법 |
US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8932933B2 (en) | 2012-05-04 | 2015-01-13 | Micron Technology, Inc. | Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures |
US9245799B2 (en) * | 2012-05-31 | 2016-01-26 | Intel Deutschland Gmbh | Semiconductor device and method of manufacturing thereof |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US8865544B2 (en) | 2012-07-11 | 2014-10-21 | Micron Technology, Inc. | Methods of forming capacitors |
FR2993397A1 (fr) * | 2012-07-16 | 2014-01-17 | St Microelectronics Sa | Dispositif semi-conducteur comprenant un condensateur integre et procede de fabrication |
US8652926B1 (en) | 2012-07-26 | 2014-02-18 | Micron Technology, Inc. | Methods of forming capacitors |
WO2014092084A1 (ja) * | 2012-12-12 | 2014-06-19 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置およびその製造方法 |
US10090376B2 (en) | 2013-10-29 | 2018-10-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and methods of forming capacitor structures |
US9018733B1 (en) * | 2014-03-10 | 2015-04-28 | Inotera Memories, Inc. | Capacitor, storage node of the capacitor, and method of forming the same |
JP2015195262A (ja) * | 2014-03-31 | 2015-11-05 | マイクロン テクノロジー, インク. | 半導体装置及びその製造方法 |
US20150348963A1 (en) * | 2014-05-30 | 2015-12-03 | Inotera Memories, Inc. | Cylinder-shaped storage node with single-layer supporting structure |
US9346669B2 (en) * | 2014-06-24 | 2016-05-24 | Newport Fab, Llc | Robust MEMS structure with via cap and related method |
US9458011B2 (en) * | 2014-06-24 | 2016-10-04 | Newport Fab, Llc | Scalable self-supported MEMS structure and related method |
JP2015035619A (ja) * | 2014-10-17 | 2015-02-19 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
KR102367394B1 (ko) | 2015-06-15 | 2022-02-25 | 삼성전자주식회사 | 캐패시터 구조체 및 이를 포함하는 반도체 소자 |
KR102279720B1 (ko) | 2015-06-24 | 2021-07-22 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9673331B2 (en) * | 2015-11-02 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device structure |
US9653307B1 (en) | 2016-07-14 | 2017-05-16 | Micron Technology, Inc. | Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures |
US10014309B2 (en) | 2016-08-09 | 2018-07-03 | Micron Technology, Inc. | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor |
US11345946B2 (en) * | 2017-03-24 | 2022-05-31 | Gen-Probe Incorporated | Systems and methods for capacitive fluid level detection, and handling containers |
CN109509836B (zh) * | 2017-09-14 | 2022-11-01 | 联华电子股份有限公司 | 形成存储器电容的方法 |
US11037940B2 (en) | 2018-03-22 | 2021-06-15 | Micron Technology, Inc. | Integrated circuit constructions comprising memory and methods used in the formation of integrated circuitry comprising memory |
US10840249B2 (en) * | 2018-08-23 | 2020-11-17 | Micron Technology, Inc. | Integrated circuitry constructions |
US10964475B2 (en) * | 2019-01-28 | 2021-03-30 | Micron Technology, Inc. | Formation of a capacitor using a sacrificial layer |
US11361972B2 (en) | 2019-04-18 | 2022-06-14 | Micron Technology, Inc. | Methods for selectively removing more-doped-silicon-dioxide relative to less-doped-silicon-dioxide |
CN113314669B (zh) * | 2020-02-27 | 2022-06-10 | 长鑫存储技术有限公司 | 双面电容结构及其形成方法 |
CN114156267A (zh) | 2020-09-07 | 2022-03-08 | 长鑫存储技术有限公司 | 半导体器件及其制备方法、存储装置 |
US11901405B2 (en) | 2020-09-11 | 2024-02-13 | Changxin Memory Technologies, Inc. | Semiconductor structure and method for manufacturing semiconductor structure |
CN114171464A (zh) * | 2020-09-11 | 2022-03-11 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
CN114446957A (zh) * | 2020-11-05 | 2022-05-06 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制造方法 |
Family Cites Families (112)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3110774A (en) * | 1960-06-08 | 1963-11-12 | Indak Mfg Corp | Multiple position rotary switch |
US4517729A (en) * | 1981-07-27 | 1985-05-21 | American Microsystems, Incorporated | Method for fabricating MOS device with self-aligned contacts |
US5340783A (en) * | 1989-01-30 | 1994-08-23 | Lanxide Technology Company, Lp | Method of producing self-supporting aluminum titanate composites and products relating thereto |
US5236860A (en) | 1991-01-04 | 1993-08-17 | Micron Technology, Inc. | Lateral extension stacked capacitor |
US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
US5340442A (en) * | 1991-09-24 | 1994-08-23 | Weyerhaeuser Company | Evaluating furnish behavior |
US5467305A (en) * | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
US5605857A (en) | 1993-02-12 | 1997-02-25 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
DE4447804C2 (de) | 1993-02-12 | 2002-01-24 | Micron Technology Inc | Verfahren zum Herstellen einer leitfähigen Mehrfachbehälter-Struktur auf der bestehenden Topographie eines Ausgangssubstrats |
US5340763A (en) * | 1993-02-12 | 1994-08-23 | Micron Semiconductor, Inc. | Multi-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate same |
US5563089A (en) | 1994-07-20 | 1996-10-08 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
US5401681A (en) | 1993-02-12 | 1995-03-28 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells |
US5498562A (en) | 1993-04-07 | 1996-03-12 | Micron Technology, Inc. | Semiconductor processing methods of forming stacked capacitors |
JP3382028B2 (ja) | 1993-09-10 | 2003-03-04 | 株式会社東芝 | 薄膜形成方法 |
US5532089A (en) * | 1993-12-23 | 1996-07-02 | International Business Machines Corporation | Simplified fabrication methods for rim phase-shift masks |
US6133620A (en) * | 1995-05-26 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
JP2956482B2 (ja) | 1994-07-29 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
JPH08181559A (ja) * | 1994-12-22 | 1996-07-12 | Maspro Denkoh Corp | 高周波信号分岐器 |
JP3623834B2 (ja) * | 1995-01-31 | 2005-02-23 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
US6744091B1 (en) | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
US5654222A (en) | 1995-05-17 | 1997-08-05 | Micron Technology, Inc. | Method for forming a capacitor with electrically interconnected construction |
JPH0982918A (ja) * | 1995-09-19 | 1997-03-28 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US5990021A (en) | 1997-12-19 | 1999-11-23 | Micron Technology, Inc. | Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture |
US6090700A (en) * | 1996-03-15 | 2000-07-18 | Vanguard International Semiconductor Corporation | Metallization method for forming interconnects in an integrated circuit |
KR20000015822A (ko) | 1996-05-21 | 2000-03-15 | 칼 하인쯔 호르닝어 | 박막 다층 콘덴서_ |
JPH1022476A (ja) | 1996-07-02 | 1998-01-23 | Sony Corp | 容量素子 |
TW308727B (en) | 1996-08-16 | 1997-06-21 | United Microelectronics Corp | Semiconductor memory device with capacitor (4) |
US5998256A (en) * | 1996-11-01 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry |
JP4056588B2 (ja) * | 1996-11-06 | 2008-03-05 | 富士通株式会社 | 半導体装置及びその製造方法 |
EP0849796A3 (en) * | 1996-12-17 | 1999-09-01 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
US5767561A (en) * | 1997-05-09 | 1998-06-16 | Lucent Technologies Inc. | Integrated circuit device with isolated circuit elements |
JPH1126718A (ja) * | 1997-06-30 | 1999-01-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
TW365065B (en) * | 1997-07-19 | 1999-07-21 | United Microelectronics Corp | Embedded memory structure and manufacturing method thereof |
US6432472B1 (en) * | 1997-08-15 | 2002-08-13 | Energenius, Inc. | Method of making semiconductor supercapacitor system and articles produced therefrom |
US5880959A (en) * | 1997-11-25 | 1999-03-09 | Voyan Technology | Method for computer-aided design of a product or process |
US6195594B1 (en) * | 1997-11-25 | 2001-02-27 | Voyan Technology | Real-time planner for design |
US6198168B1 (en) * | 1998-01-20 | 2001-03-06 | Micron Technologies, Inc. | Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same |
US6025225A (en) * | 1998-01-22 | 2000-02-15 | Micron Technology, Inc. | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
US5981350A (en) * | 1998-05-29 | 1999-11-09 | Micron Technology, Inc. | Method for forming high capacitance memory cells |
US6767789B1 (en) * | 1998-06-26 | 2004-07-27 | International Business Machines Corporation | Method for interconnection between transfer devices and storage capacitors in memory cells and device formed thereby |
US6458925B1 (en) * | 1998-08-03 | 2002-10-01 | University Of Maryland, Baltimore | Peptide antagonists of zonulin and methods for use of the same |
JP4322330B2 (ja) * | 1998-09-04 | 2009-08-26 | エルピーダメモリ株式会社 | 半導体集積回路装置の製造方法 |
JP4180716B2 (ja) * | 1998-12-28 | 2008-11-12 | 富士通株式会社 | 半導体装置の製造方法 |
US6204178B1 (en) | 1998-12-29 | 2001-03-20 | Micron Technology, Inc. | Nucleation and deposition of PT films using ultraviolet irradiation |
US6230062B1 (en) * | 1999-01-08 | 2001-05-08 | Voyan Technology | Adaptation to unmeasured variables |
US6383861B1 (en) * | 1999-02-18 | 2002-05-07 | Micron Technology, Inc. | Method of fabricating a dual gate dielectric |
US6303956B1 (en) | 1999-02-26 | 2001-10-16 | Micron Technology, Inc. | Conductive container structures having a dielectric cap |
US6204143B1 (en) | 1999-04-15 | 2001-03-20 | Micron Technology Inc. | Method of forming high aspect ratio structures for semiconductor devices |
JP2001010552A (ja) * | 1999-06-28 | 2001-01-16 | Komatsu Ltd | 履帯のリンク及びピンの固定構造 |
US6667502B1 (en) | 1999-08-31 | 2003-12-23 | Micron Technology, Inc. | Structurally-stabilized capacitors and method of making of same |
US6395600B1 (en) | 1999-09-02 | 2002-05-28 | Micron Technology, Inc. | Method of forming a contact structure and a container capacitor structure |
US6403442B1 (en) | 1999-09-02 | 2002-06-11 | Micron Technology, Inc. | Methods of forming capacitors and resultant capacitor structures |
US6303518B1 (en) * | 1999-09-30 | 2001-10-16 | Novellus Systems, Inc. | Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers |
TW432546B (en) * | 1999-11-25 | 2001-05-01 | Taiwan Semiconductor Mfg | Manufacturing method of copper damascene |
KR20010061020A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 반도체소자의 제조방법 |
JP3595231B2 (ja) | 1999-12-28 | 2004-12-02 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR100338775B1 (ko) * | 2000-06-20 | 2002-05-31 | 윤종용 | Dram을 포함하는 반도체 소자의 콘택 구조체 및 그형성방법 |
US6399490B1 (en) * | 2000-06-29 | 2002-06-04 | International Business Machines Corporation | Highly conformal titanium nitride deposition process for high aspect ratio structures |
DE10036725C2 (de) * | 2000-07-27 | 2002-11-28 | Infineon Technologies Ag | Verfahren zur Herstellung einer porösen Isolierschicht mit niedriger Dielektrizitätskonstante auf einem Halbleitersubstrat |
DE10036724A1 (de) * | 2000-07-27 | 2002-02-14 | Infineon Technologies Ag | Verfahren zur Bildung eines Grabens in einem Halbleitersubstrat |
KR100338826B1 (ko) * | 2000-08-28 | 2002-05-31 | 박종섭 | 커패시터의 전하저장전극 형성방법 |
JP2002094027A (ja) * | 2000-09-11 | 2002-03-29 | Toshiba Corp | 半導体記憶装置とその製造方法 |
US20020098554A1 (en) | 2000-09-19 | 2002-07-25 | Mike Farwick | Nucleotide sequences coding for the pepC gene |
US6621112B2 (en) | 2000-12-06 | 2003-09-16 | Infineon Technologies Ag | DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication |
KR100360414B1 (ko) | 2001-01-05 | 2002-11-13 | 삼성전자 주식회사 | 트윈 비트 결함을 방지하는 실린더형 커패시터의 하부전극형성방법 |
KR100388682B1 (ko) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | 반도체 메모리 장치의 스토리지 전극층 및 그 형성방법 |
JP3671854B2 (ja) * | 2001-04-05 | 2005-07-13 | 松下電器産業株式会社 | シリコン系基板の表面処理方法 |
KR100422063B1 (ko) | 2001-05-02 | 2004-03-10 | 삼성전자주식회사 | 반도체 장치의 캐패시터 및 그 제조방법 |
KR100431656B1 (ko) * | 2001-09-11 | 2004-05-17 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
EP1306894A1 (en) * | 2001-10-19 | 2003-05-02 | Infineon Technologies AG | A method of forming a silicon dioxide layer on a curved Si surface |
JP2003140361A (ja) | 2001-10-31 | 2003-05-14 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP4060572B2 (ja) * | 2001-11-06 | 2008-03-12 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US6668642B2 (en) * | 2001-12-21 | 2003-12-30 | Mks Instruments, Inc. | Apparatus and method for thermal isolation of thermal mass flow sensor |
US6656748B2 (en) * | 2002-01-31 | 2003-12-02 | Texas Instruments Incorporated | FeRAM capacitor post stack etch clean/repair |
KR100487519B1 (ko) * | 2002-02-05 | 2005-05-03 | 삼성전자주식회사 | 반도체 장치의 커패시터 및 그 제조 방법 |
KR100423900B1 (ko) * | 2002-02-08 | 2004-03-22 | 삼성전자주식회사 | 반도체 장치의 커패시터 형성 방법 |
US6617222B1 (en) | 2002-02-27 | 2003-09-09 | Micron Technology, Inc. | Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor device |
US6515325B1 (en) * | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
JP4064695B2 (ja) * | 2002-03-19 | 2008-03-19 | 富士通株式会社 | 半導体装置の製造方法 |
KR100459707B1 (ko) * | 2002-03-21 | 2004-12-04 | 삼성전자주식회사 | 실린더형 커패시터를 포함하는 반도체 소자 및 그 제조 방법 |
KR100473113B1 (ko) * | 2002-04-04 | 2005-03-08 | 삼성전자주식회사 | 반도체 장치의 커패시터 제조 방법 |
JP4047631B2 (ja) * | 2002-05-28 | 2008-02-13 | エルピーダメモリ株式会社 | 王冠構造のキャパシタを有する半導体集積回路装置およびその製造方法 |
US6784479B2 (en) * | 2002-06-05 | 2004-08-31 | Samsung Electronics Co., Ltd. | Multi-layer integrated circuit capacitor electrodes |
KR100475272B1 (ko) * | 2002-06-29 | 2005-03-10 | 주식회사 하이닉스반도체 | 반도체소자 제조방법 |
US20040029047A1 (en) | 2002-08-07 | 2004-02-12 | Renesas Technology Corp. | Micropattern forming material, micropattern forming method and method for manufacturing semiconductor device |
JP2004093832A (ja) | 2002-08-30 | 2004-03-25 | Renesas Technology Corp | 微細パターン形成材料、微細パターン形成方法および半導体装置の製造方法 |
JP2004103926A (ja) | 2002-09-11 | 2004-04-02 | Renesas Technology Corp | レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤 |
JP4353685B2 (ja) * | 2002-09-18 | 2009-10-28 | 株式会社ルネサステクノロジ | 半導体装置 |
US7341804B2 (en) | 2002-09-20 | 2008-03-11 | 3M Innovative Properties Company | Anode compositions having an elastomeric binder and an adhesion promoter |
US6645869B1 (en) * | 2002-09-26 | 2003-11-11 | Vanguard International Semiconductor Corporation | Etching back process to improve topographic planarization of a polysilicon layer |
EP1578999B1 (en) | 2002-10-30 | 2013-01-16 | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. | Method for measuring non-transferrin bound iron |
KR100481867B1 (ko) | 2002-11-11 | 2005-04-11 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조 방법 |
DE10259331B4 (de) * | 2002-12-18 | 2005-02-10 | Infineon Technologies Ag | Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske |
JP4502173B2 (ja) * | 2003-02-03 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
TW578328B (en) * | 2003-03-28 | 2004-03-01 | Gemtek Technology Co Ltd | Dual-frequency inverted-F antenna |
US6720232B1 (en) * | 2003-04-10 | 2004-04-13 | Taiwan Semiconductor Manufacturing Company | Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure |
US6784069B1 (en) * | 2003-08-29 | 2004-08-31 | Micron Technology, Inc. | Permeable capacitor electrode |
US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
US7125781B2 (en) * | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
DE10344814B3 (de) * | 2003-09-26 | 2005-07-14 | Infineon Technologies Ag | Speichervorrichtung zur Speicherung elektrischer Ladung und Verfahren zu deren Herstellung |
US7019346B2 (en) | 2003-12-23 | 2006-03-28 | Intel Corporation | Capacitor having an anodic metal oxide substrate |
EP1767042B1 (en) | 2004-07-08 | 2012-11-21 | LG Electronics Inc. | Method for allocating electronic serial number for mobile station |
US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US20060024958A1 (en) * | 2004-07-29 | 2006-02-02 | Abbas Ali | HSQ/SOG dry strip process |
US7160788B2 (en) * | 2004-08-23 | 2007-01-09 | Micron Technology, Inc. | Methods of forming integrated circuits |
US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7557015B2 (en) * | 2005-03-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7517753B2 (en) * | 2005-05-18 | 2009-04-14 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7544563B2 (en) * | 2005-05-18 | 2009-06-09 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US20070099328A1 (en) * | 2005-10-31 | 2007-05-03 | Yuan-Sheng Chiang | Semiconductor device and interconnect structure and their respective fabricating methods |
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- 2004-12-01 JP JP2006542721A patent/JP5007465B2/ja not_active Expired - Fee Related
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- 2004-12-01 WO PCT/US2004/040252 patent/WO2005062349A1/en active Search and Examination
- 2004-12-01 KR KR1020067011542A patent/KR100868812B1/ko not_active IP Right Cessation
- 2004-12-01 CN CNB2004800369167A patent/CN100405541C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN1890778A (zh) | 2007-01-03 |
JP2012146993A (ja) | 2012-08-02 |
TWI252511B (en) | 2006-04-01 |
US20060063344A1 (en) | 2006-03-23 |
US20050287780A1 (en) | 2005-12-29 |
KR20060110321A (ko) | 2006-10-24 |
US7271051B2 (en) | 2007-09-18 |
US20050054159A1 (en) | 2005-03-10 |
KR100868812B1 (ko) | 2008-11-14 |
CN100405541C (zh) | 2008-07-23 |
JP2007512716A (ja) | 2007-05-17 |
US7420238B2 (en) | 2008-09-02 |
WO2005062349A1 (en) | 2005-07-07 |
WO2005062349B1 (en) | 2005-09-15 |
US7125781B2 (en) | 2006-10-24 |
US20060063345A1 (en) | 2006-03-23 |
TW200531146A (en) | 2005-09-16 |
EP1700332A1 (en) | 2006-09-13 |
US7449391B2 (en) | 2008-11-11 |
EP1700332B1 (en) | 2014-11-26 |
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