JP2009237578A - 液晶表示装置及び電子機器 - Google Patents
液晶表示装置及び電子機器 Download PDFInfo
- Publication number
- JP2009237578A JP2009237578A JP2009123672A JP2009123672A JP2009237578A JP 2009237578 A JP2009237578 A JP 2009237578A JP 2009123672 A JP2009123672 A JP 2009123672A JP 2009123672 A JP2009123672 A JP 2009123672A JP 2009237578 A JP2009237578 A JP 2009237578A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- region
- liquid crystal
- columnar spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 90
- 125000006850 spacer group Chemical group 0.000 claims abstract description 178
- 239000000758 substrate Substances 0.000 claims abstract description 160
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000011896 sensitive detection Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 83
- 239000010408 film Substances 0.000 description 328
- 239000012535 impurity Substances 0.000 description 79
- 239000010410 layer Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 39
- 239000000463 material Substances 0.000 description 35
- 239000011159 matrix material Substances 0.000 description 29
- 125000004429 atom Chemical group 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 23
- 229910052698 phosphorus Inorganic materials 0.000 description 23
- 239000011574 phosphorus Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 238000001994 activation Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 238000005070 sampling Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000010407 anodic oxide Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000003550 marker Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Abstract
【解決手段】第1の基板と、第2の基板と、第1の基板と第2の基板との間に配置された柱状スペーサを複数備えた表示装置と、光学式の検出素子を備えたタッチパネルとを有する。柱状スペーサによって、機械的強度が補強され、頑丈なパネルとすることができる。
【選択図】図22
Description
次に、もう一方の基板とを組み合わせ、周縁部をシール用接着剤でシールして液晶セルを形成する。次いで、この液晶セル内に液晶材料を真空注入法により充填した後、注入口を封止する。
また、前記柱状のスペーサは基板全域に形成してもよい。
(図3(c))
)を公知の成膜法で形成する。なお、非晶質構造を含む半導体膜としては、非晶質半導体膜、微結晶半導体膜があり、さらに非晶質シリコンゲルマニウム膜などの非晶質構造を含む化合物半導体膜も含まれる。また、上記膜厚で形成しておけば、最終的にTFTが完成した時点の活性層の膜厚は10〜100nm(好ましくは30〜50nm)となる。
の厚さの窒化酸化シリコン膜または酸化シリコン膜を用いる。この保護膜509は不純物添加時に結晶質シリコン膜が直接プラズマに曝されないようにするためと、微妙な濃度制御を可能にするための意味がある。(図5(C))
)
膜を用いる。
なお、ゲート配線524a、524bは断面では二つに見えるが、実際は連続的に繋がった一つのパターンから形成されている。(図6(C))
また、本実施例では弾力性に富んだ樹脂材料でなる柱状スペーサ568を用いているため、貼り合わせ工程でかかる圧力を吸収(緩和)することができる。また、本実施例のスペーサは素子に対する接触面積がビーズ状スペーサのそれより大きいため、特定部分に過剰な圧力がかかるようなことがない。
なお、本明細書中において、駆動回路とはソース側駆動回路およびゲート側駆動回路を含めた総称である。
のnチャネル型TFT702を含むCMOS回路が適している。なお、ゲート配線をダブルゲート構造、トリプルゲート構造といったマルチゲート構造とすることは、各回路の信頼性を向上させる上で有効である。
次いで、第1の基板上に実施例1と同じスペーサ材料を用い、同じ条件(成膜条件、露光条件、現像条件、ベーク条件等)で柱状スペーサ1201を形成した。
その後、ラビング処理を行った。以後、これらの工程以外は実施例1と全く同様にして図16(B)に示す液晶表示装置を作製した。
また、1319は液晶材料、1320は対向電極である。
本実施例では、プラズマCVD法で非晶質シリコン膜を55nmの厚さに形成した。そして、公知の結晶化技術を使用して非晶質シリコン膜から結晶質シリコン膜を形成する。例えば、レーザー結晶化法や熱結晶化法(固相成長法)を適用すれば良いが、ここでは、特開平7−130652号公報で開示された技術に従って、触媒元素を用いる結晶化法で結晶質シリコン膜を形成した。
とを積層させた。導電層(B)はタンタル(Ta)、チタン(Ti)、モリブデン(Mo)、タングステン(W)から選ばれた元素、または前記元素を主成分とする合金か、前記元素を組み合わせた合金膜(代表的にはMo−W合金膜、Mo−Ta合金膜)で形成すれば良く、導電層(A)は窒化タンタル(TaN)、窒化タングステン(WN)、窒化チタン(TiN)膜、窒化モリブデン(MoN)
で形成する。本実施例では、導電層(A)に30nmの厚さの窒化タンタル膜を、導電層(B)には350nmのTa膜を用い、いずれもスパッタ法で形成した。
そして、画素マトリクス回路と、CMOS回路が形成されたアクティブマトリクス基板と対向基板とを、公知のセル組み工程によって貼りあわせる。その後、両基板の間に液晶材料1606を注入し、封止剤(図示せず)によって完全に封止した。液晶材料には公知の液晶材料を用いれば良い。このようにして図20に示すアクティブマトリクス型液晶表示装置が完成した。
なお、このような感圧式や静電容量式の検出素子が設けられたタッチパネル3102はLCDパネル3103に直接接しているため、LCDパネル3103が外部からの圧力を受けやすく効果的である。
即ち、ドライバー回路と画素マトリクス回路を同じ電源電圧で動作させることが可能となり、液晶表示装置全体の低消費電力化を図ることができる。
Claims (3)
- 第1の基板と、第2の基板と、前記第1の基板と前記第2の基板との間に配置された柱状スペーサを複数備えた表示装置と、
光学式の検出素子を備えたタッチパネルとを有することを特徴とする半導体装置。 - 第1の基板と、第2の基板と、前記第1の基板と前記第2の基板との間に配置された柱状スペーサを複数備えた表示装置と、
感圧式の検出素子を備えたタッチパネルとを有することを特徴とする半導体装置。 - 第1の基板と、第2の基板と、前記第1の基板と前記第2の基板との間に配置された柱状スペーサを複数備えた表示装置と、
静電容量式の検出素子を備えたタッチパネルとを有することを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009123672A JP5184439B2 (ja) | 1999-07-06 | 2009-05-22 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19110299 | 1999-07-06 | ||
JP1999191102 | 1999-07-06 | ||
JP2009123672A JP5184439B2 (ja) | 1999-07-06 | 2009-05-22 | 表示装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000196438A Division JP2001075500A (ja) | 1999-07-06 | 2000-06-29 | 半導体装置およびその作製方法 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011066977A Division JP5478542B2 (ja) | 1999-07-06 | 2011-03-25 | 表示装置 |
JP2011087326A Division JP4785998B2 (ja) | 1999-07-06 | 2011-04-11 | 液晶表示装置 |
JP2011090708A Division JP5194142B2 (ja) | 1999-07-06 | 2011-04-15 | 表示装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009237578A true JP2009237578A (ja) | 2009-10-15 |
JP5184439B2 JP5184439B2 (ja) | 2013-04-17 |
Family
ID=16268899
Family Applications (22)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000196438A Withdrawn JP2001075500A (ja) | 1999-07-06 | 2000-06-29 | 半導体装置およびその作製方法 |
JP2006045789A Expired - Lifetime JP4713365B2 (ja) | 1999-07-06 | 2006-02-22 | 液晶表示装置、及び電子機器 |
JP2009123672A Expired - Fee Related JP5184439B2 (ja) | 1999-07-06 | 2009-05-22 | 表示装置 |
JP2011066977A Expired - Lifetime JP5478542B2 (ja) | 1999-07-06 | 2011-03-25 | 表示装置 |
JP2011087326A Expired - Lifetime JP4785998B2 (ja) | 1999-07-06 | 2011-04-11 | 液晶表示装置 |
JP2011090708A Expired - Lifetime JP5194142B2 (ja) | 1999-07-06 | 2011-04-15 | 表示装置及び電子機器 |
JP2011250739A Expired - Lifetime JP5073093B2 (ja) | 1999-07-06 | 2011-11-16 | 液晶表示装置 |
JP2012251401A Withdrawn JP2013050737A (ja) | 1999-07-06 | 2012-11-15 | 表示装置及び電子機器 |
JP2013102093A Expired - Lifetime JP5760036B2 (ja) | 1999-07-06 | 2013-05-14 | 液晶表示装置、液晶モジュール及び電子機器 |
JP2013116033A Expired - Lifetime JP5581420B2 (ja) | 1999-07-06 | 2013-05-31 | 液晶表示装置、液晶モジュール及び電子機器 |
JP2013119741A Expired - Lifetime JP5514935B2 (ja) | 1999-07-06 | 2013-06-06 | 半導体装置 |
JP2013119740A Expired - Lifetime JP5707447B2 (ja) | 1999-07-06 | 2013-06-06 | 液晶表示装置、モジュール、及び電子機器 |
JP2013119743A Expired - Lifetime JP5396561B2 (ja) | 1999-07-06 | 2013-06-06 | 液晶表示装置 |
JP2013243040A Expired - Lifetime JP5453570B1 (ja) | 1999-07-06 | 2013-11-25 | 半導体装置 |
JP2013243035A Expired - Lifetime JP5453569B2 (ja) | 1999-07-06 | 2013-11-25 | 液晶表示装置 |
JP2014076855A Withdrawn JP2014132363A (ja) | 1999-07-06 | 2014-04-03 | 液晶表示装置及び透過型液晶表示装置 |
JP2014181899A Expired - Lifetime JP5853078B2 (ja) | 1999-07-06 | 2014-09-08 | 表示装置、表示モジュール及び電子機器 |
JP2015216391A Withdrawn JP2016014909A (ja) | 1999-07-06 | 2015-11-04 | 表示装置及び電子機器 |
JP2017123829A Withdrawn JP2017215589A (ja) | 1999-07-06 | 2017-06-26 | 半導体装置 |
JP2018100218A Expired - Lifetime JP6423980B2 (ja) | 1999-07-06 | 2018-05-25 | 液晶表示装置 |
JP2019000673A Withdrawn JP2019066881A (ja) | 1999-07-06 | 2019-01-07 | 表示装置 |
JP2019065661A Withdrawn JP2019133180A (ja) | 1999-07-06 | 2019-03-29 | 液晶表示装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000196438A Withdrawn JP2001075500A (ja) | 1999-07-06 | 2000-06-29 | 半導体装置およびその作製方法 |
JP2006045789A Expired - Lifetime JP4713365B2 (ja) | 1999-07-06 | 2006-02-22 | 液晶表示装置、及び電子機器 |
Family Applications After (19)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011066977A Expired - Lifetime JP5478542B2 (ja) | 1999-07-06 | 2011-03-25 | 表示装置 |
JP2011087326A Expired - Lifetime JP4785998B2 (ja) | 1999-07-06 | 2011-04-11 | 液晶表示装置 |
JP2011090708A Expired - Lifetime JP5194142B2 (ja) | 1999-07-06 | 2011-04-15 | 表示装置及び電子機器 |
JP2011250739A Expired - Lifetime JP5073093B2 (ja) | 1999-07-06 | 2011-11-16 | 液晶表示装置 |
JP2012251401A Withdrawn JP2013050737A (ja) | 1999-07-06 | 2012-11-15 | 表示装置及び電子機器 |
JP2013102093A Expired - Lifetime JP5760036B2 (ja) | 1999-07-06 | 2013-05-14 | 液晶表示装置、液晶モジュール及び電子機器 |
JP2013116033A Expired - Lifetime JP5581420B2 (ja) | 1999-07-06 | 2013-05-31 | 液晶表示装置、液晶モジュール及び電子機器 |
JP2013119741A Expired - Lifetime JP5514935B2 (ja) | 1999-07-06 | 2013-06-06 | 半導体装置 |
JP2013119740A Expired - Lifetime JP5707447B2 (ja) | 1999-07-06 | 2013-06-06 | 液晶表示装置、モジュール、及び電子機器 |
JP2013119743A Expired - Lifetime JP5396561B2 (ja) | 1999-07-06 | 2013-06-06 | 液晶表示装置 |
JP2013243040A Expired - Lifetime JP5453570B1 (ja) | 1999-07-06 | 2013-11-25 | 半導体装置 |
JP2013243035A Expired - Lifetime JP5453569B2 (ja) | 1999-07-06 | 2013-11-25 | 液晶表示装置 |
JP2014076855A Withdrawn JP2014132363A (ja) | 1999-07-06 | 2014-04-03 | 液晶表示装置及び透過型液晶表示装置 |
JP2014181899A Expired - Lifetime JP5853078B2 (ja) | 1999-07-06 | 2014-09-08 | 表示装置、表示モジュール及び電子機器 |
JP2015216391A Withdrawn JP2016014909A (ja) | 1999-07-06 | 2015-11-04 | 表示装置及び電子機器 |
JP2017123829A Withdrawn JP2017215589A (ja) | 1999-07-06 | 2017-06-26 | 半導体装置 |
JP2018100218A Expired - Lifetime JP6423980B2 (ja) | 1999-07-06 | 2018-05-25 | 液晶表示装置 |
JP2019000673A Withdrawn JP2019066881A (ja) | 1999-07-06 | 2019-01-07 | 表示装置 |
JP2019065661A Withdrawn JP2019133180A (ja) | 1999-07-06 | 2019-03-29 | 液晶表示装置 |
Country Status (4)
Country | Link |
---|---|
US (8) | US6638781B1 (ja) |
JP (22) | JP2001075500A (ja) |
KR (1) | KR100653758B1 (ja) |
TW (1) | TW459275B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011155351A1 (ja) * | 2010-06-11 | 2011-12-15 | シャープ株式会社 | 表示装置一体型タッチパネルおよびその製造方法 |
KR20140055097A (ko) * | 2012-10-30 | 2014-05-09 | 삼성디스플레이 주식회사 | 터치 스크린 패널의 제조방법 |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4298131B2 (ja) | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US6680487B1 (en) * | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
TW459275B (en) * | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
JP4627843B2 (ja) | 1999-07-22 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7071041B2 (en) * | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6639265B2 (en) * | 2000-01-26 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
TW525305B (en) | 2000-02-22 | 2003-03-21 | Semiconductor Energy Lab | Self-light-emitting device and method of manufacturing the same |
US6891194B2 (en) * | 2001-02-07 | 2005-05-10 | Sharp Kabushiki Kaisha | Active matrix substrate, electromagnetic detector, and liquid crystal display apparatus |
US6887753B2 (en) * | 2001-02-28 | 2005-05-03 | Micron Technology, Inc. | Methods of forming semiconductor circuitry, and semiconductor circuit constructions |
JP2002333628A (ja) * | 2001-05-07 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 液晶表示装置、カラーフィルタ基板およびアレイ基板 |
JP2002357834A (ja) * | 2001-05-31 | 2002-12-13 | Matsushita Electric Ind Co Ltd | 液晶表示装置及び液晶表示装置の製造方法 |
JP2002357837A (ja) * | 2001-05-31 | 2002-12-13 | Matsushita Electric Ind Co Ltd | 液晶表示装置及びその製造方法 |
JP4185678B2 (ja) * | 2001-06-08 | 2008-11-26 | 株式会社日立製作所 | 液晶表示装置 |
JP4945036B2 (ja) * | 2001-08-31 | 2012-06-06 | オプトレックス株式会社 | 液晶表示セルの製造方法 |
US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
JP2004061904A (ja) * | 2002-07-30 | 2004-02-26 | Sharp Corp | カラーフィルタ基板および表示装置 |
AU2003268640A1 (en) * | 2002-10-09 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Production method for light emitting device |
KR100460210B1 (ko) * | 2002-10-29 | 2004-12-04 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
JP4244289B2 (ja) | 2002-10-31 | 2009-03-25 | シャープ株式会社 | 液晶表示装置用基板及びそれを備えた液晶表示装置 |
US8125601B2 (en) * | 2003-01-08 | 2012-02-28 | Samsung Electronics Co., Ltd. | Upper substrate and liquid crystal display device having the same |
TWI362644B (en) | 2003-01-16 | 2012-04-21 | Semiconductor Energy Lab | Liquid crystal display device and manufacturing method therof |
TWI380080B (en) | 2003-03-07 | 2012-12-21 | Semiconductor Energy Lab | Liquid crystal display device and method for manufacturing the same |
US7583250B2 (en) | 2003-03-12 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2004281538A (ja) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | 電子装置及びその製造方法、回路基板並びに電子機器 |
JP4413191B2 (ja) * | 2003-10-16 | 2010-02-10 | シャープ株式会社 | スペーサ付き基板、パネル、液晶表示パネル、パネルの製造方法および液晶表示パネルの製造方法 |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) * | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) * | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR100705319B1 (ko) * | 2004-12-01 | 2007-04-10 | 엘지전자 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
US7916263B2 (en) * | 2004-12-02 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7563490B2 (en) | 2004-12-06 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR100685929B1 (ko) | 2004-12-14 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
KR20060077536A (ko) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조방법 |
US20060278331A1 (en) | 2005-06-14 | 2006-12-14 | Roger Dugas | Membrane-based chip tooling |
US8456015B2 (en) | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
US7687400B2 (en) | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7838997B2 (en) | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
US7215032B2 (en) * | 2005-06-14 | 2007-05-08 | Cubic Wafer, Inc. | Triaxial through-chip connection |
US7851348B2 (en) | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US7786592B2 (en) * | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
KR101315198B1 (ko) * | 2005-09-15 | 2013-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시장치의 제조방법 |
TWI517378B (zh) * | 2005-10-17 | 2016-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR100768191B1 (ko) * | 2005-11-12 | 2007-10-17 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치의 제조방법 및 유기 발광 표시장치 |
JP2007147814A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 発光装置およびその製造方法並びに電子機器 |
US7731377B2 (en) | 2006-03-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Backlight device and display device |
IL176673A0 (en) * | 2006-07-03 | 2007-07-04 | Fermon Israel | A variably displayable mobile device keyboard |
CN103257491B (zh) * | 2006-09-29 | 2017-04-19 | 株式会社半导体能源研究所 | 半导体设备 |
JP2008164787A (ja) | 2006-12-27 | 2008-07-17 | Epson Imaging Devices Corp | 液晶表示装置 |
KR100970925B1 (ko) * | 2006-12-29 | 2010-07-20 | 엘지디스플레이 주식회사 | 액정표시장치 및 이의 제조방법 |
KR101350479B1 (ko) * | 2007-02-12 | 2014-01-16 | 삼성전자주식회사 | Drm 디바이스를 이용하여 drm 기능과 부가 기능을수행하기 위한 방법 및 그 시스템 |
JP4577318B2 (ja) * | 2007-03-02 | 2010-11-10 | セイコーエプソン株式会社 | 液晶装置の製造方法 |
US8049851B2 (en) * | 2007-06-26 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a liquid crystal display device having a second orientation film surrounding a first orientation film |
US8184256B2 (en) | 2007-12-28 | 2012-05-22 | Samsung Electronics Co., Ltd. | Display panel and method for manufacturing the same |
JP5154261B2 (ja) * | 2008-02-26 | 2013-02-27 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
JP5246782B2 (ja) | 2008-03-06 | 2013-07-24 | 株式会社ジャパンディスプレイウェスト | 液晶装置および電子機器 |
WO2009128123A1 (ja) * | 2008-04-14 | 2009-10-22 | シャープ株式会社 | 液晶表示パネル |
US8736587B2 (en) * | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20100024751A (ko) * | 2008-08-26 | 2010-03-08 | 삼성전자주식회사 | 액정표시장치 및 그 제조방법 |
KR101500425B1 (ko) * | 2008-08-27 | 2015-03-09 | 삼성디스플레이 주식회사 | 터치 스크린 표시 장치 |
TWI607670B (zh) | 2009-01-08 | 2017-12-01 | 半導體能源研究所股份有限公司 | 發光裝置及電子裝置 |
JP5100670B2 (ja) | 2009-01-21 | 2012-12-19 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
JP5202395B2 (ja) * | 2009-03-09 | 2013-06-05 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
JP5572979B2 (ja) * | 2009-03-30 | 2014-08-20 | ソニー株式会社 | 半導体装置の製造方法 |
US8624875B2 (en) * | 2009-08-24 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving touch panel |
TWI418903B (zh) * | 2009-09-30 | 2013-12-11 | Au Optronics Corp | 陣列基板及其製造方法 |
JP5740132B2 (ja) | 2009-10-26 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 表示装置及び半導体装置 |
JP2011138804A (ja) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
JP5782676B2 (ja) * | 2010-03-10 | 2015-09-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
JP2011242506A (ja) * | 2010-05-17 | 2011-12-01 | Sony Corp | 表示装置の製造方法、および表示装置 |
JP5877992B2 (ja) | 2010-10-25 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2012108494A (ja) | 2010-10-25 | 2012-06-07 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US8953120B2 (en) | 2011-01-07 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR20130000938A (ko) * | 2011-06-24 | 2013-01-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 액정 표시 장치의 제조 방법 |
KR20130010168A (ko) * | 2011-07-18 | 2013-01-28 | 삼성전자주식회사 | 사용자 단말기 및 그의 표시 패널 |
JP2013026345A (ja) * | 2011-07-19 | 2013-02-04 | Toshiba Corp | 半導体装置の製造方法 |
JP5683432B2 (ja) * | 2011-11-07 | 2015-03-11 | Jx日鉱日石金属株式会社 | 圧延銅箔 |
JP5631847B2 (ja) * | 2011-11-07 | 2014-11-26 | Jx日鉱日石金属株式会社 | 圧延銅箔 |
JP2013104992A (ja) * | 2011-11-14 | 2013-05-30 | Seiko Epson Corp | 偏光素子、偏光素子の製造方法、プロジェクター、液晶装置、および電子機器 |
CN104169746B (zh) * | 2012-03-15 | 2016-06-08 | 综研化学株式会社 | 防反射膜 |
JP6302186B2 (ja) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP6076683B2 (ja) | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6204012B2 (ja) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6155020B2 (ja) | 2012-12-21 | 2017-06-28 | 株式会社半導体エネルギー研究所 | 発光装置及びその製造方法 |
JP6216125B2 (ja) | 2013-02-12 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6104649B2 (ja) | 2013-03-08 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2014206596A (ja) * | 2013-04-11 | 2014-10-30 | 株式会社ジャパンディスプレイ | 液晶表示装置及びその製造方法 |
JP6534506B2 (ja) * | 2013-07-05 | 2019-06-26 | Hoya株式会社 | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置 |
TWI683169B (zh) | 2014-07-25 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 堆疊結構體、輸入/輸出裝置、資訊處理裝置及堆疊結構體的製造方法 |
JP2016200698A (ja) * | 2015-04-09 | 2016-12-01 | Jsr株式会社 | 液晶表示素子、感放射線性樹脂組成物、層間絶縁膜、層間絶縁膜の製造方法および液晶表示素子の製造方法 |
WO2016167221A1 (ja) * | 2015-04-13 | 2016-10-20 | 富士フイルム株式会社 | 透明基材フィルム積層体、タッチパネル用センサーフィルム、タッチパネル、画像表示装置および画像表示装置の視認性改善方法 |
JP7174630B2 (ja) * | 2016-04-13 | 2022-11-17 | タクトテク オーユー | 埋め込まれた多層電子機器を有する多層構造体 |
CN108630829B (zh) * | 2017-03-17 | 2019-11-08 | 京东方科技集团股份有限公司 | 显示面板的制作方法、显示面板及显示装置 |
KR102166474B1 (ko) * | 2017-06-30 | 2020-10-16 | 주식회사 엘지화학 | 기판 |
EP4009309A4 (en) | 2019-08-01 | 2022-08-10 | BOE Technology Group Co., Ltd. | DISPLAY SUBSTRATE AND DISPLAY APPARATUS |
CN111290155B (zh) * | 2020-03-26 | 2021-04-27 | 武汉华星光电技术有限公司 | 一种彩膜基板、显示面板及电子装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618903A (ja) * | 1991-12-12 | 1994-01-28 | Hosiden Corp | カラー液晶表示素子とその製造方法 |
JPH0651319A (ja) * | 1992-06-01 | 1994-02-25 | Toshiba Corp | 液晶表示素子 |
JPH06230349A (ja) * | 1993-02-08 | 1994-08-19 | Hitachi Ltd | カラー液晶表示素子 |
JPH07287219A (ja) * | 1994-04-15 | 1995-10-31 | Suzuki Sogyo Co Ltd | 液晶表示装置における光錯乱防止構造並びにその製造方法 |
JPH10153785A (ja) * | 1996-09-26 | 1998-06-09 | Toshiba Corp | 液晶表示装置 |
JPH10325959A (ja) * | 1997-05-26 | 1998-12-08 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH10339889A (ja) * | 1997-06-09 | 1998-12-22 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその製造方法 |
JPH11109372A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Electronic Engineering Corp | 液晶表示素子用基板の製造方法、液晶表示素子の製造方法、液晶表示素子用基板及び液晶表示素子 |
JP2000321580A (ja) * | 1999-04-28 | 2000-11-24 | Internatl Business Mach Corp <Ibm> | 液晶表示装置 |
Family Cites Families (205)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US322698A (en) * | 1885-07-21 | Feank dibber | ||
US4080038A (en) | 1977-04-28 | 1978-03-21 | Bunker Ramo Corporation | Non-bulging quick snap-on strain relief adapter |
JPS58140609U (ja) | 1982-03-18 | 1983-09-21 | 株式会社白金製作所 | 磁力駆動装置 |
US4555746A (en) | 1983-01-12 | 1985-11-26 | Matsushita Electric Industrial Co., Ltd. | Organic chip capacitor |
JPS61184518A (ja) | 1985-02-12 | 1986-08-18 | Semiconductor Energy Lab Co Ltd | 液晶表示装置作成方法 |
JPS61184518U (ja) | 1985-05-09 | 1986-11-18 | ||
US4775225A (en) | 1985-05-16 | 1988-10-04 | Canon Kabushiki Kaisha | Liquid crystal device having pillar spacers with small base periphery width in direction perpendicular to orientation treatment |
DE3524086A1 (de) * | 1985-07-05 | 1987-01-08 | Vdo Schindling | Fluessigkristallzelle |
JPH07120730B2 (ja) | 1986-01-13 | 1995-12-20 | イビデン 株式会社 | 電子部品を搭載した樹脂基板 |
US4653864A (en) | 1986-02-26 | 1987-03-31 | Ovonic Imaging Systems, Inc. | Liquid crystal matrix display having improved spacers and method of making same |
JPH0659228B2 (ja) | 1986-06-10 | 1994-08-10 | 協和醗酵工業株式会社 | アミノ酸の連続発酵生産方法 |
JPS6350817A (ja) | 1986-08-20 | 1988-03-03 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置作製方法 |
US5963288A (en) | 1987-08-20 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal device having sealant and spacers made from the same material |
US5379139A (en) | 1986-08-20 | 1995-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal device and method for manufacturing same with spacers formed by photolithography |
JPH0618903B2 (ja) | 1986-12-25 | 1994-03-16 | 東洋紡績株式会社 | 熱収縮性ポリエステル系フイルム |
JPH086053B2 (ja) | 1987-04-08 | 1996-01-24 | エスケ−化研株式会社 | 防藻防カビ塗料組成物 |
JPH0784267B2 (ja) | 1987-04-28 | 1995-09-13 | キヤノン株式会社 | 給紙装置 |
JPH0618903Y2 (ja) | 1987-04-30 | 1994-05-18 | 昌芳 松本 | 盤状物用手提げ袋 |
US5032883A (en) | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
DE3732519A1 (de) * | 1987-09-26 | 1989-04-06 | Olympia Aeg | Anordnung zum eingeben und verarbeiten von zeichen und/oder grafischen mustern |
JPH0291616A (ja) * | 1988-09-28 | 1990-03-30 | Seiko Epson Corp | 液晶表示装置 |
JPH061213Y2 (ja) | 1988-12-28 | 1994-01-12 | 株式会社土屋製作所 | 空気清浄器 |
JPH088181Y2 (ja) | 1989-09-25 | 1996-03-06 | 松下電工株式会社 | 竪樋取付け装置 |
JPH0651319B2 (ja) | 1989-10-20 | 1994-07-06 | 凸版印刷株式会社 | 射出成形ノズル及び射出成形方法 |
JPH088181B2 (ja) | 1990-02-06 | 1996-01-29 | 日新電機株式会社 | 補償リアクトル装置 |
US5062198A (en) * | 1990-05-08 | 1991-11-05 | Keytec, Inc. | Method of making a transparent touch screen switch assembly |
JPH086053Y2 (ja) | 1990-06-29 | 1996-02-21 | カヤバ工業株式会社 | ジャカード織機 |
JPH0493924A (ja) | 1990-08-07 | 1992-03-26 | Sony Corp | 液晶表示装置 |
JPH04127128A (ja) | 1990-09-18 | 1992-04-28 | Sharp Corp | アクティブマトリクス表示装置 |
TW228633B (ja) | 1991-01-17 | 1994-08-21 | Semiconductor Energy Res Co Ltd | |
JP2794678B2 (ja) | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
US5199128A (en) * | 1991-04-03 | 1993-04-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for cleaning rubber deposits from airport runways and roadways |
CA2082136C (en) * | 1991-11-08 | 1998-01-06 | Hiroshi Tsujioka | Coordinates input device |
US5739882A (en) * | 1991-11-18 | 1998-04-14 | Semiconductor Energy Laboratory Co., Ltd. | LCD polymerized column spacer formed on a modified substrate, from an acrylic resin, on a surface having hydrophilic and hydrophobic portions, or at regular spacings |
JPH05158067A (ja) | 1991-12-03 | 1993-06-25 | Stanley Electric Co Ltd | 液晶表示装置とその製造方法 |
JPH05158053A (ja) | 1991-12-05 | 1993-06-25 | Sharp Corp | 液晶表示装置の製造方法 |
JPH05158052A (ja) * | 1991-12-09 | 1993-06-25 | Sharp Corp | 液晶表示素子 |
JPH05259109A (ja) | 1992-03-12 | 1993-10-08 | Sony Corp | メタル配線層の形成方法 |
JPH05281558A (ja) | 1992-04-03 | 1993-10-29 | Toshiba Corp | 液晶表示素子 |
JPH05289109A (ja) | 1992-04-08 | 1993-11-05 | Sony Corp | 液晶表示装置 |
US5473450A (en) | 1992-04-28 | 1995-12-05 | Sharp Kabushiki Kaisha | Liquid crystal display device with a polymer between liquid crystal regions |
FR2693005B1 (fr) | 1992-06-26 | 1995-03-31 | Thomson Lcd | Disposition d'encapsulation et de passivation de circuit pour écrans plats. |
EP0603420B1 (en) | 1992-07-15 | 2001-06-13 | Kabushiki Kaisha Toshiba | Liquid crystal display |
JPH0659228A (ja) | 1992-08-12 | 1994-03-04 | Toshiba Corp | 液晶表示素子の製造方法 |
JP2924506B2 (ja) | 1992-10-27 | 1999-07-26 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の画素構造 |
JPH0651319U (ja) | 1992-12-24 | 1994-07-12 | エヌティエヌ株式会社 | カーテンウォール用発音防止金具 |
JPH07507405A (ja) | 1993-01-26 | 1995-08-10 | ヒューズ・エアクラフト・カンパニー | 内部の固定されたスペーサーを用いる改良された液晶ライトバルブ及びそれを組立てる方法 |
US5843225A (en) | 1993-02-03 | 1998-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor and process for fabricating semiconductor device |
JP3497198B2 (ja) | 1993-02-03 | 2004-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置および薄膜トランジスタの作製方法 |
EP0612102B1 (en) | 1993-02-15 | 2001-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Process for the fabrication of a crystallised semiconductor layer |
JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
JP3210126B2 (ja) | 1993-03-15 | 2001-09-17 | 株式会社東芝 | 液晶表示装置の製造方法 |
JPH06273735A (ja) | 1993-03-18 | 1994-09-30 | Nippon Telegr & Teleph Corp <Ntt> | 液晶セル |
JP2933816B2 (ja) * | 1993-07-15 | 1999-08-16 | シャープ株式会社 | 液晶表示素子及びその製造方法 |
JPH07152024A (ja) | 1993-05-17 | 1995-06-16 | Sharp Corp | 液晶表示素子 |
JP3108571B2 (ja) * | 1993-10-27 | 2000-11-13 | シャープ株式会社 | 液晶表示入出力装置 |
US5539545A (en) * | 1993-05-18 | 1996-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making LCD in which resin columns are cured and the liquid crystal is reoriented |
US5481121A (en) | 1993-05-26 | 1996-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
KR100186886B1 (ko) | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
JP2791858B2 (ja) | 1993-06-25 | 1998-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
US5594569A (en) | 1993-07-22 | 1997-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid-crystal electro-optical apparatus and method of manufacturing the same |
JP2762215B2 (ja) | 1993-08-12 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび半導体装置の作製方法 |
JPH0784267A (ja) * | 1993-09-20 | 1995-03-31 | Matsushita Electric Ind Co Ltd | 液晶表示素子及び空間光変調素子 |
EP0649046B1 (en) | 1993-10-19 | 2001-07-11 | Sharp Kabushiki Kaisha | A liquid crystal display device and a production method for the same |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
US5673127A (en) * | 1993-12-01 | 1997-09-30 | Matsushita Electric Industrial Co., Ltd. | Display panel and display device using a display panel |
JP3269734B2 (ja) | 1994-06-21 | 2002-04-02 | シャープ株式会社 | 半導体装置及びその製造方法 |
TW272319B (ja) | 1993-12-20 | 1996-03-11 | Sharp Kk | |
JPH07181488A (ja) | 1993-12-24 | 1995-07-21 | Suzuki Sogyo Co Ltd | 液晶表示装置における面状照明装置 |
JP3109967B2 (ja) | 1993-12-28 | 2000-11-20 | キヤノン株式会社 | アクティブマトリクス基板の製造方法 |
JP3378078B2 (ja) | 1994-02-23 | 2003-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6162667A (en) | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
JP3192546B2 (ja) | 1994-04-15 | 2001-07-30 | シャープ株式会社 | 半導体装置およびその製造方法 |
JPH07333655A (ja) | 1994-06-10 | 1995-12-22 | Sony Corp | アクティブマトリクス型表示装置 |
JP3067949B2 (ja) | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
DE69529493T2 (de) | 1994-06-20 | 2003-10-30 | Canon Kk | Anzeigevorrichtung und Verfahren zu ihrer Herstellung |
JP3155886B2 (ja) | 1994-06-20 | 2001-04-16 | キヤノン株式会社 | 表示装置及びその製造法 |
JPH0876129A (ja) * | 1994-09-01 | 1996-03-22 | Hitachi Ltd | 液晶表示素子およびその製造方法 |
JP2888177B2 (ja) | 1994-09-28 | 1999-05-10 | 日本電気株式会社 | 液晶表示装置 |
JP3894969B2 (ja) | 1994-09-30 | 2007-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5915174A (en) | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
JP3277082B2 (ja) | 1994-11-22 | 2002-04-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP3491415B2 (ja) * | 1995-01-13 | 2004-01-26 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
TW378276B (en) * | 1995-01-13 | 2000-01-01 | Seiko Epson Corp | Liquid crystal display device and its fabrication method |
JP3769317B2 (ja) | 1995-01-13 | 2006-04-26 | セイコーエプソン株式会社 | 液晶表示装置及びその製造方法 |
JP2694126B2 (ja) | 1995-02-06 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置及びその製造方法 |
JPH08234225A (ja) | 1995-02-28 | 1996-09-13 | Sony Corp | 液晶表示装置 |
JPH08248427A (ja) | 1995-03-13 | 1996-09-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP3678788B2 (ja) | 1995-03-16 | 2005-08-03 | 富士通株式会社 | 液晶表示装置 |
JPH08297286A (ja) * | 1995-04-26 | 1996-11-12 | Internatl Business Mach Corp <Ibm> | 液晶表示装置 |
JPH0926603A (ja) | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
CN1123067C (zh) * | 1995-05-22 | 2003-10-01 | 日立化成工业株式会社 | 具有与布线基板电连接的半导体芯片的半导体器件 |
US6286359B1 (en) | 1995-08-18 | 2001-09-11 | Director-General Of The Agency Of Industrial Science And Technology | Method for testing frequency response characteristics of laser displacement/vibration meters |
JPH09120062A (ja) | 1995-08-18 | 1997-05-06 | Toshiba Electron Eng Corp | カラーフィルタ基板及びその製造方法、それを用いた液晶表示素子及びその製造方法 |
JP2647815B2 (ja) | 1995-08-18 | 1997-08-27 | 工業技術院長 | レーザー変位計・レーザー振動計の周波数特性測定法 |
JPH09120075A (ja) | 1995-08-21 | 1997-05-06 | Toshiba Electron Eng Corp | 液晶表示素子 |
JP3999824B2 (ja) | 1995-08-21 | 2007-10-31 | 東芝電子エンジニアリング株式会社 | 液晶表示素子 |
JP3708593B2 (ja) | 1995-09-06 | 2005-10-19 | 東芝電子エンジニアリング株式会社 | 液晶表示装置、及びその製造方法 |
TW373098B (en) | 1995-09-06 | 1999-11-01 | Toshiba Corp | Liquid crystal exposure component and its fabricating method |
JPH0973093A (ja) | 1995-09-06 | 1997-03-18 | Toshiba Electron Eng Corp | 液晶表示装置、及びその製造方法 |
US6888608B2 (en) | 1995-09-06 | 2005-05-03 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
JP3638346B2 (ja) | 1995-09-06 | 2005-04-13 | 東芝電子エンジニアリング株式会社 | 液晶表示素子 |
JPH0980447A (ja) | 1995-09-08 | 1997-03-28 | Toshiba Electron Eng Corp | 液晶表示素子 |
JP3347925B2 (ja) * | 1995-09-14 | 2002-11-20 | シャープ株式会社 | 液晶表示素子 |
JP3199215B2 (ja) | 1995-09-14 | 2001-08-13 | シャープ株式会社 | 液晶表示素子およびその製造方法 |
JP3299869B2 (ja) * | 1995-09-27 | 2002-07-08 | シャープ株式会社 | 液晶表示装置とその製造方法 |
US5917563A (en) | 1995-10-16 | 1999-06-29 | Sharp Kabushiki Kaisha | Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line |
JPH09171196A (ja) | 1995-10-16 | 1997-06-30 | Sharp Corp | 液晶表示装置 |
JPH09127525A (ja) | 1995-11-06 | 1997-05-16 | Sharp Corp | 液晶表示素子およびその製造方法 |
JPH09153619A (ja) | 1995-11-30 | 1997-06-10 | Sanyo Electric Co Ltd | 薄膜トランジスタ |
JP3124480B2 (ja) | 1995-12-12 | 2001-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3310152B2 (ja) | 1996-01-18 | 2002-07-29 | 株式会社東芝 | 液晶表示装置およびその製造方法 |
JPH09203890A (ja) | 1996-01-25 | 1997-08-05 | Sharp Corp | 入力機能付き液晶表示素子および反射型入力機能付き液晶表示素子、並びにそれらの製造方法 |
US6236445B1 (en) * | 1996-02-22 | 2001-05-22 | Hughes Electronics Corporation | Method for making topographic projections |
US5852485A (en) | 1996-02-27 | 1998-12-22 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for producing the same |
KR100386203B1 (ko) | 1996-02-29 | 2003-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전기광학장치및그제조방법 |
JP3634061B2 (ja) | 1996-04-01 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
GB2312773A (en) | 1996-05-01 | 1997-11-05 | Sharp Kk | Active matrix display |
JP3663741B2 (ja) * | 1996-05-22 | 2005-06-22 | セイコーエプソン株式会社 | アクティブマトリックス型液晶表示装置及びその製造方法 |
JP3841892B2 (ja) | 1996-08-13 | 2006-11-08 | 株式会社半導体エネルギー研究所 | 表示装置及び表示機能を有する装置 |
US6288764B1 (en) * | 1996-06-25 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device or electronic device having liquid crystal display panel |
JP3871736B2 (ja) | 1996-06-25 | 2007-01-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び撮影装置及び情報処理装置 |
JPH1020298A (ja) * | 1996-07-03 | 1998-01-23 | Sharp Corp | 液晶表示装置 |
US5986729A (en) * | 1996-07-10 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
JPH1062789A (ja) | 1996-08-23 | 1998-03-06 | Sharp Corp | 液晶表示装置及びその製造方法 |
JPH1068956A (ja) | 1996-08-29 | 1998-03-10 | Toshiba Corp | 液晶表示素子及びその製造方法 |
JPH1068955A (ja) | 1996-08-29 | 1998-03-10 | Toshiba Corp | 液晶表示素子 |
JPH1090689A (ja) * | 1996-09-10 | 1998-04-10 | Citizen Watch Co Ltd | 液晶表示パネル |
JPH1096955A (ja) | 1996-09-24 | 1998-04-14 | Toshiba Corp | 液晶表示装置 |
JPH10153797A (ja) | 1996-09-26 | 1998-06-09 | Toshiba Corp | 液晶表示装置 |
JPH10104418A (ja) | 1996-10-03 | 1998-04-24 | Toray Ind Inc | 液晶表示装置用基板および液晶表示装置 |
JP3069949B2 (ja) * | 1996-10-09 | 2000-07-24 | 日精樹脂工業株式会社 | 射出成形機の入力装置 |
US5973763A (en) * | 1996-10-16 | 1999-10-26 | Seiko Epson Corporation | Liquid crystal device including supporting columns |
US6163257A (en) * | 1996-10-31 | 2000-12-19 | Detection Systems, Inc. | Security system having event detectors and keypads with integral monitor |
US6020947A (en) | 1996-11-06 | 2000-02-01 | Sharp Kabushiki Kaisha | Liquid crystal devices |
JP3472422B2 (ja) * | 1996-11-07 | 2003-12-02 | シャープ株式会社 | 液晶装置の製造方法 |
TW542933B (en) | 1996-12-19 | 2003-07-21 | Sharp Kk | Liquid crystal display device and process for producing the same |
JP3808155B2 (ja) | 1997-01-17 | 2006-08-09 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶表示装置 |
US6088070A (en) | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
JPH11133463A (ja) | 1997-10-31 | 1999-05-21 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型液晶表示装置及び電子機器 |
JP3833327B2 (ja) | 1997-02-03 | 2006-10-11 | 三洋電機株式会社 | 薄膜トランジスタの製造方法、表示装置、密着型イメージセンサ、三次元ic |
US5831710A (en) | 1997-02-06 | 1998-11-03 | International Business Machines Corporation | Liquid crystal display |
JPH10228022A (ja) | 1997-02-17 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
JP3782194B2 (ja) * | 1997-02-28 | 2006-06-07 | 株式会社東芝 | アクティブマトリクス型液晶表示装置 |
TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP3032801B2 (ja) | 1997-03-03 | 2000-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3828976B2 (ja) * | 1997-03-03 | 2006-10-04 | 東芝電子エンジニアリング株式会社 | 液晶表示素子及びその製造方法 |
JP3361029B2 (ja) * | 1997-03-19 | 2003-01-07 | 株式会社東芝 | 表示装置 |
JPH10268316A (ja) | 1997-03-24 | 1998-10-09 | Toshiba Corp | 液晶表示素子の製造方法 |
JPH10268361A (ja) | 1997-03-27 | 1998-10-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその製造方法 |
US5978063A (en) | 1997-04-15 | 1999-11-02 | Xerox Corporation | Smart spacers for active matrix liquid crystal projection light valves |
WO1998048322A1 (fr) * | 1997-04-22 | 1998-10-29 | Matsushita Electric Industrial Co., Ltd. | Afficheur a cristaux liquides a fonction de lecture d'image, procede de lecture d'image et procede de fabrication associe |
US6465268B2 (en) | 1997-05-22 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
JP3998755B2 (ja) | 1997-05-22 | 2007-10-31 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
JP4038272B2 (ja) * | 1997-06-04 | 2008-01-23 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置の組立て方法および組立て装置 |
US6016357A (en) * | 1997-06-16 | 2000-01-18 | International Business Machines Corporation | Feedback method to repair phase shift masks |
GB9713544D0 (en) | 1997-06-26 | 1997-09-03 | Sharp Kk | Ferroelectric liquid crystal device manufacture |
JP4831850B2 (ja) | 1997-07-08 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US6330047B1 (en) | 1997-07-28 | 2001-12-11 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for fabricating the same |
JPH1184386A (ja) | 1997-09-01 | 1999-03-26 | Toshiba Corp | アクティブマトリクス型液晶表示装置 |
JP4159633B2 (ja) | 1997-09-19 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法並びに電子機器 |
JP3919900B2 (ja) | 1997-09-19 | 2007-05-30 | 株式会社半導体エネルギー研究所 | 液晶表示装置およびその作製方法 |
JPH1195687A (ja) | 1997-09-20 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH1195194A (ja) | 1997-09-24 | 1999-04-09 | Toshiba Electronic Engineering Corp | 液晶表示素子およびその製造方法 |
JPH11101986A (ja) | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 表示装置及び表示装置用大基板 |
JP3699828B2 (ja) * | 1997-10-06 | 2005-09-28 | シャープ株式会社 | 液晶表示素子およびその製造方法 |
JPH11119230A (ja) | 1997-10-14 | 1999-04-30 | Toshiba Corp | 液晶表示装置及び液晶表示装置の製造方法 |
JPH11133600A (ja) * | 1997-10-30 | 1999-05-21 | Jsr Corp | 表示パネルスペーサー用感放射線性樹脂組成物 |
US6108064A (en) * | 1997-11-06 | 2000-08-22 | Sharp Kabushiki Kaisha | Reflective-type liquid crystal display device including a single polarizer plate |
JP3299925B2 (ja) | 1997-11-20 | 2002-07-08 | シャープ株式会社 | アクティブマトリクス型液晶表示装置の製造方法 |
JP3522095B2 (ja) * | 1997-12-08 | 2004-04-26 | 松下電器産業株式会社 | 液晶表示素子 |
US6281952B1 (en) * | 1997-12-26 | 2001-08-28 | Sharp Kabushiki Kaisha | Liquid crystal display |
JPH11295746A (ja) * | 1998-02-16 | 1999-10-29 | Sharp Corp | 液晶素子の製造方法、液晶注入装置および液晶注入システム |
US6369867B1 (en) * | 1998-03-12 | 2002-04-09 | Gl Displays, Inc. | Riveted liquid crystal display comprising at least one plastic rivet formed by laser drilling through a pair of plastic plates |
JP4011725B2 (ja) | 1998-04-24 | 2007-11-21 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
US6313481B1 (en) | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
US20010040560A1 (en) * | 1998-08-20 | 2001-11-15 | Alan Amron | Video display document |
EP0984492A3 (en) | 1998-08-31 | 2000-05-17 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising organic resin and process for producing semiconductor device |
KR100324914B1 (ko) * | 1998-09-25 | 2002-02-28 | 니시무로 타이죠 | 기판의 검사방법 |
JP2000122071A (ja) | 1998-10-13 | 2000-04-28 | Toshiba Corp | 液晶表示素子及び液晶表示素子の製造方法 |
JP3661443B2 (ja) * | 1998-10-27 | 2005-06-15 | 株式会社日立製作所 | アクティブマトリクス液晶表示装置 |
KR100327696B1 (ko) * | 1998-11-16 | 2002-03-09 | 니시무로 타이죠 | 액정표시장치 및 착색층 부재 |
JP4434359B2 (ja) * | 1999-05-19 | 2010-03-17 | 東芝モバイルディスプレイ株式会社 | 平面表示装置及びその製造方法 |
JP4376989B2 (ja) * | 1998-12-22 | 2009-12-02 | 東レ・ダウコーニング株式会社 | 固体材料用撥水処理剤 |
JP2000171805A (ja) * | 1998-12-01 | 2000-06-23 | Hitachi Ltd | 液晶表示装置 |
US6420988B1 (en) | 1998-12-03 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Digital analog converter and electronic device using the same |
US6285247B1 (en) | 1999-01-21 | 2001-09-04 | Agere Systems Guardian Corporation | Optimized low voltage CMOS operation |
US6777716B1 (en) | 1999-02-12 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and method of manufacturing therefor |
JP4215905B2 (ja) | 1999-02-15 | 2009-01-28 | シャープ株式会社 | 液晶表示装置 |
EP2284605A3 (en) | 1999-02-23 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and fabrication method thereof |
US7821065B2 (en) | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
US6861670B1 (en) | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
JP4298131B2 (ja) * | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US6680487B1 (en) | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
JP3838818B2 (ja) * | 1999-06-17 | 2006-10-25 | Nec液晶テクノロジー株式会社 | 液晶表示パネル及びその製造方法 |
JP2001005007A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Ltd | 液晶表示装置 |
TW459275B (en) * | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
JP2001133791A (ja) * | 1999-11-09 | 2001-05-18 | Toshiba Corp | 液晶表示装置 |
US6477767B1 (en) | 1999-12-06 | 2002-11-12 | Hon Hai Precision Ind. Co., Ltd. | Method for removing a braiding layer of a coaxial cable |
JP2001311963A (ja) | 2000-04-27 | 2001-11-09 | Toshiba Corp | 液晶表示装置および液晶表示装置の製造方法 |
US6876355B1 (en) * | 2000-05-18 | 2005-04-05 | Lg. Philips Lcd Co., Ltd. | Touch screen structure to prevent image distortion |
KR20020004277A (ko) * | 2000-07-04 | 2002-01-16 | 구본준, 론 위라하디락사 | 액정표시장치 |
US6690441B2 (en) * | 2000-09-22 | 2004-02-10 | Dai Nippon Printing Co., Ltd. | Multi-domain vertical alignment mode liquid crystal display having spacers formed over zigzag like alignment-controlling projection |
-
2000
- 2000-06-27 TW TW089112657A patent/TW459275B/zh not_active IP Right Cessation
- 2000-06-29 US US09/606,414 patent/US6638781B1/en not_active Expired - Lifetime
- 2000-06-29 JP JP2000196438A patent/JP2001075500A/ja not_active Withdrawn
- 2000-07-06 KR KR1020000038536A patent/KR100653758B1/ko active IP Right Grant
-
2003
- 2003-10-27 US US10/692,759 patent/US7173281B2/en not_active Expired - Lifetime
-
2006
- 2006-02-22 JP JP2006045789A patent/JP4713365B2/ja not_active Expired - Lifetime
- 2006-03-10 US US11/371,917 patent/US7605902B2/en not_active Expired - Fee Related
-
2008
- 2008-04-10 US US12/100,873 patent/US7808009B2/en not_active Expired - Fee Related
-
2009
- 2009-05-22 JP JP2009123672A patent/JP5184439B2/ja not_active Expired - Fee Related
- 2009-09-09 US US12/556,135 patent/US9069215B2/en not_active Expired - Fee Related
-
2011
- 2011-03-25 JP JP2011066977A patent/JP5478542B2/ja not_active Expired - Lifetime
- 2011-04-11 JP JP2011087326A patent/JP4785998B2/ja not_active Expired - Lifetime
- 2011-04-15 JP JP2011090708A patent/JP5194142B2/ja not_active Expired - Lifetime
- 2011-11-16 JP JP2011250739A patent/JP5073093B2/ja not_active Expired - Lifetime
-
2012
- 2012-01-27 US US13/359,515 patent/US9052551B2/en not_active Expired - Fee Related
- 2012-11-15 JP JP2012251401A patent/JP2013050737A/ja not_active Withdrawn
-
2013
- 2013-05-14 JP JP2013102093A patent/JP5760036B2/ja not_active Expired - Lifetime
- 2013-05-31 JP JP2013116033A patent/JP5581420B2/ja not_active Expired - Lifetime
- 2013-06-06 JP JP2013119741A patent/JP5514935B2/ja not_active Expired - Lifetime
- 2013-06-06 JP JP2013119740A patent/JP5707447B2/ja not_active Expired - Lifetime
- 2013-06-06 JP JP2013119743A patent/JP5396561B2/ja not_active Expired - Lifetime
- 2013-11-25 JP JP2013243040A patent/JP5453570B1/ja not_active Expired - Lifetime
- 2013-11-25 JP JP2013243035A patent/JP5453569B2/ja not_active Expired - Lifetime
-
2014
- 2014-01-24 US US14/163,207 patent/US9395584B2/en not_active Expired - Fee Related
- 2014-04-03 JP JP2014076855A patent/JP2014132363A/ja not_active Withdrawn
- 2014-09-08 JP JP2014181899A patent/JP5853078B2/ja not_active Expired - Lifetime
-
2015
- 2015-11-04 JP JP2015216391A patent/JP2016014909A/ja not_active Withdrawn
-
2016
- 2016-06-14 US US15/181,590 patent/US20160282658A1/en not_active Abandoned
-
2017
- 2017-06-26 JP JP2017123829A patent/JP2017215589A/ja not_active Withdrawn
-
2018
- 2018-05-25 JP JP2018100218A patent/JP6423980B2/ja not_active Expired - Lifetime
-
2019
- 2019-01-07 JP JP2019000673A patent/JP2019066881A/ja not_active Withdrawn
- 2019-03-29 JP JP2019065661A patent/JP2019133180A/ja not_active Withdrawn
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618903A (ja) * | 1991-12-12 | 1994-01-28 | Hosiden Corp | カラー液晶表示素子とその製造方法 |
JPH0651319A (ja) * | 1992-06-01 | 1994-02-25 | Toshiba Corp | 液晶表示素子 |
JPH06230349A (ja) * | 1993-02-08 | 1994-08-19 | Hitachi Ltd | カラー液晶表示素子 |
JPH07287219A (ja) * | 1994-04-15 | 1995-10-31 | Suzuki Sogyo Co Ltd | 液晶表示装置における光錯乱防止構造並びにその製造方法 |
JPH10153785A (ja) * | 1996-09-26 | 1998-06-09 | Toshiba Corp | 液晶表示装置 |
JPH10325959A (ja) * | 1997-05-26 | 1998-12-08 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH10339889A (ja) * | 1997-06-09 | 1998-12-22 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその製造方法 |
JPH11109372A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Electronic Engineering Corp | 液晶表示素子用基板の製造方法、液晶表示素子の製造方法、液晶表示素子用基板及び液晶表示素子 |
JP2000321580A (ja) * | 1999-04-28 | 2000-11-24 | Internatl Business Mach Corp <Ibm> | 液晶表示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011155351A1 (ja) * | 2010-06-11 | 2011-12-15 | シャープ株式会社 | 表示装置一体型タッチパネルおよびその製造方法 |
KR20140055097A (ko) * | 2012-10-30 | 2014-05-09 | 삼성디스플레이 주식회사 | 터치 스크린 패널의 제조방법 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6423980B2 (ja) | 液晶表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110329 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120321 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130116 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5184439 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160125 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160125 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |