CN103842339A - 用于有机电致发光器件的咔唑衍生物 - Google Patents
用于有机电致发光器件的咔唑衍生物 Download PDFInfo
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- CN103842339A CN103842339A CN201280046210.3A CN201280046210A CN103842339A CN 103842339 A CN103842339 A CN 103842339A CN 201280046210 A CN201280046210 A CN 201280046210A CN 103842339 A CN103842339 A CN 103842339A
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- IGHOZKDBCCFNNC-UHFFFAOYSA-N 1h-imidazole;quinoxaline Chemical class C1=CNC=N1.N1=CC=NC2=CC=CC=C21 IGHOZKDBCCFNNC-UHFFFAOYSA-N 0.000 description 1
- 125000004793 2,2,2-trifluoroethoxy group Chemical group FC(CO*)(F)F 0.000 description 1
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- 125000005034 trifluormethylthio group Chemical group FC(S*)(F)F 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- PWYVVBKROXXHEB-UHFFFAOYSA-M trimethyl-[3-(1-methyl-2,3,4,5-tetraphenylsilol-1-yl)propyl]azanium;iodide Chemical compound [I-].C[N+](C)(C)CCC[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PWYVVBKROXXHEB-UHFFFAOYSA-M 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000003809 water extraction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
本发明描述了式(1)的咔唑衍生物,特别是将其用作有机电致发光器件中的三重态基质材料,其中在式(1)中使用的符号代表如下的基团:在每次出现时Y是相同或不同的,且代表CR或N;X选自C(R1)2、O、S、PR1、P(=O)R1或BR1;特征在于存在至少一个如下的基团R,该基团R是相同或不同的,且在每次出现时代表如下式(2)的基团,和/或特征在于存在至少一个代表如下式(3)或(4)基团的基团R1。本发明还涉及制备根据本发明的化合物的方法,并且涉及包含根据本发明的化合物的电子器件。
Description
技术领域
本发明描述了咔唑衍生物,特别是将其用作有机电致发光器件中的三重态基质材料。本发明还涉及制备根据本发明的化合物的方法,并且涉及包含这些化合物的电子器件。
背景技术
例如在US4539507、US5151629、EP0676461和WO98/27136中描述了其中有机半导体用作功能材料的有机电致发光器件(OLED)的结构。使用的发光材料通常是显示磷光而不是荧光的有机金属络合物。出于量子力学原因,使用有机金属化合物作为磷光发光体可以实现最高达四倍的能量和功率效率的提高。通常仍需要改进OLED,特别是显示三重态发光(磷光)的OLED,例如在效率、工作电压和寿命方面还需要进行改进。
磷光OLED的性能不仅由使用的三重态发光体决定。特别是,此处使用的其它材料,例如基质材料也是特别重要的。因此,这些材料的改进也可以导致OLED性能的显著改进。
根据现有技术,特别是吲哚并咔唑衍生物(例如根据WO2007/063754或WO2008/056746)或者茚并咔唑衍生物(例如根据WO2010/136109或WO2011/000455),特别是被缺电子杂芳族化合物例如三嗪取代的那些衍生物,用作磷光发光体的基质材料。此外,双二苯并呋喃衍生物(例如根据EP2301926)例如用作磷光发光体的基质材料。然而,使用这些基质材料仍需要特别是在器件的效率、寿命和工作电压方面进行改进。
本发明的目的是提供适合用于荧光或特别是用于磷光OLED中的化合物,所述化合物特别是作为基质材料。特别是,本发明的目的是提供基质材料,其也适合用于绿色磷光OLED且如果希望也适合用于蓝色磷光OLED,且其导致良好的效率、长的寿命和低的工作电压。基质材料的性质特别是对有机电致发光器件的寿命和效率具有显著影响。
令人惊奇地,已经发现,包含如下式(1)化合物的电致发光器件相对于现有技术具有改进,特别是在用作磷光掺杂剂的基质材料时具有改进。
发明内容
因此,本发明涉及如下式(1)的化合物,
其中,以下适用于使用的符号:
Y在每次出现时相同或不同地是CR或N;
X选自C(R1)2、O、S、PR1、P(=O)R1或BR1;
R、R1在每次出现时相同或不同地是H,D,F,Cl,Br,I,N(R2)2,N(Ar)2,C(=O)Ar,P(=O)Ar2,S(=O)Ar,S(=O)2Ar,CR2=CR2Ar,CN,NO2,Si(R2)3,B(OR2)2,OSO2R2,具有1至40个C原子的直链烷基、烷氧基或硫代烷氧基基团或者具有3至40个C原子的支链或环状的烷基、烷氧基或硫代烷氧基基团,其中上述基团中的每个可以被一个或多个基团R2取代,其中一个或多个非相邻的CH2基团可以被R2C=CR2、C≡C、Si(R2)2、C=O、C=NR2、P(=O)(R2)、SO、SO2、NR2、O、S或CONR2代替,并且其中一个或多个H原子可以被D、F、Cl、Br、I、CN或NO2代替,或者具有5至60个芳族环原子的芳族或杂芳族环系,其在每种情况下可以被一个或多个基团R2取代,或者具有5至40个芳族环原子的芳氧基或杂芳氧基基团,其可以被一个或多个基团R2取代,或者具有5至40个芳族环原子的芳烷基或杂芳烷基基团,其可以被一个或多个基团R2取代,或这些体系的组合;此处两个或更多个取代基R与它们键合至的原子一起,或者两个取代基R1与它们键合至的原子一起,也可以彼此形成单环或多环的脂族或芳族环系;
Ar在每次出现时相同或不同地是芳族或杂芳族环系,优选具有5至40个芳族环原子的芳基或杂芳基基团,其可以被一个或多个基团R3取代;
R2在每次出现时相同或不同地是H,D,F,Cl,Br,I,N(R3)2,N(Ar)2,C(=O)Ar,P(=O)Ar2,S(=O)Ar,S(=O)2Ar,CR3=CR3Ar,CN,NO2,Si(R3)3,B(OR3)2,OSO2R3,具有1至40个C原子的直链烷基、烷氧基或硫代烷氧基基团或者具有3至40个C原子的支链或环状的烷基、烷氧基或硫代烷氧基基团,其中上述基团中的每个可以被一个或多个基团R3取代,其中一个或多个非相邻的CH2基团可以被R3C=CR3、C≡C、Si(R3)2、C=O、C=NR3、P(=O)(R3)、SO、SO2、NR3、O、S或CONR3代替,并且其中一个或多个H原子可以被D、F、Cl、Br、I、CN或NO2代替,或者具有5至60个芳族环原子的芳族或杂芳族环系,其在每种情况下可以被一个或多个基团R3取代,或者具有5至40个芳族环原子的芳氧基或杂芳氧基基团,其可以被一个或多个基团R3取代,或者具有5至40个芳族环原子的芳烷基或杂芳烷基基团,其可以被一个或多个基团R3取代,或这些体系的组合;
R3在每次出现时相同或不同地是H,D,或者具有1至20个C原子的脂族烃基团,或者具有5至40个环原子的芳基或杂芳基基团,或者这些基团的组合;
条件是,如果基团R、R1、R2、R3、Ar或Ar1中的一个或多个含有不符合式(2)、(3)或(4)的杂芳基基团,则它们不是缺电子的杂芳基基团;
特征在于存在至少一个如下的基团R,该基团R在每次出现时相同或不同地代表如下式(2)的基团,
其中虚线键表示式(2)基团的连接,R2具有如上提及的含义,且此外:
如果式(2)的基团通过Q连接至Ar1或连接至分子的剩余部分,则Q是C;或者在其它情况中,Q在每次出现时相同或不同地是CR2或N;
Z是NR2或S;
Ar1是具有5至40个芳族环原子的二价芳族或杂芳族环系,其可以被一个或多个基团R2取代;
p是0或1;
和/或特征在于存在至少一个代表如下式(3)或(4)基团的基团R1,
其中虚线键表示式(3)或(4)基团的连接,R2、Ar1、Q和p具有如上提及的含义,且此外:
W是NR2、O或S。
在本发明意义上的芳基基团含有6至60个C原子;在本发明意义上的杂芳基基团含有2至60个C原子和至少一个杂原子,条件是C原子和杂原子之和至少为5。所述杂原子优选地选自N、O和/或S。芳基基团或杂芳基基团在此处被认为是指简单的芳族环,即苯,或者简单的杂芳族环,例如噻吩等,或者稠合(缩合)的芳基或杂芳基基团,例如萘、蒽、菲、二苯并呋喃等。相反,通过单键彼此连接的芳族环,例如联苯,不被称为芳基或杂芳基基团,而被称为芳族环系。
在本发明意义上的芳族环系在环系中含有6至80个C原子。在本发明意义上的杂芳族环系在环系中含有2至60个C原子和至少一个杂原子,条件是C原子和杂原子之和至少为5。所述杂原子优选选自N、O和/或S。在本发明意义上的芳族或杂芳族环系旨在被认为是指不必仅包含芳基或杂芳基基团的体系,而是其中多个芳基或杂芳基基团还可以通过非芳族单元(优选小于非H原子的10%)连接,该非芳族单元例如为C、N或O原子。因此,例如,和其中两个或更多个芳基基团例如通过短的烷基基团连接的体系一样,诸如芴、9,9'-螺二芴、9,9-二芳基芴、三芳基胺、二芳基醚、茋等的体系同样旨在被认为是在本发明意义上的芳族环系。此外,通过单键彼此连接的芳族环,例如联苯,被称为在本申请意义上的芳族环系。
在本发明意义上的缺电子杂芳基基团被定义为具有至少两个杂原子的5元环杂芳基基团,例如咪唑、唑、二唑等,或者被定义为具有至少一个杂原子的6元环杂芳基基团,例如吡啶、嘧啶、吡嗪、三嗪等。另外的6元环芳基或6元环杂芳基基团也可以稠合在这些基团上,例如在苯并咪唑或喹啉中。
为了本发明的目的,其中个别H原子或CH2基团还可以被上述基团取代的通常可以含有1至40个或也可以含有1至20个C原子的脂族烃基团或烷基基团或烯基或炔基基团,优选被认为是指如下的基团:甲基、乙基、正丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基、2-甲基丁基、正戊基、仲戊基、环戊基、正己基、环己基、正庚基、环庚基、正辛基、环辛基、2-乙基己基、三氟甲基、五氟乙基、2,2,2-三氟乙基、乙烯基、丙烯基、丁烯基、戊烯基、环戊烯基、己烯基、环己烯基、庚烯基、环庚烯基、辛烯基、环辛烯基、乙炔基、丙炔基、丁炔基、戊炔基、己炔基、庚炔基或辛炔基。具有1至40个C原子的烷氧基基团优选被认为是指甲氧基、三氟甲氧基、乙氧基、正丙氧基、异丙氧基、正丁氧基、异丁氧基、仲丁氧基、叔丁氧基、正戊氧基、仲戊氧基、2-甲基丁氧基、正己氧基、环己氧基、正庚氧基、环庚氧基、正辛氧基、环辛氧基、2-乙基己氧基、五氟乙氧基和2,2,2-三氟乙氧基。具有1至40个C原子的硫代烷基基团被认为特别是指甲硫基、乙硫基、正丙硫基、异丙硫基、正丁硫基、异丁硫基、仲丁硫基、叔丁硫基、正戊硫基、仲戊硫基、正己硫基、环己硫基、正庚硫基、环庚硫基、正辛硫基、环辛硫基、2-乙基己硫基、三氟甲硫基、五氟乙硫基、2,2,2-三氟乙硫基、乙烯硫基、丙烯硫基、丁烯硫基、戊烯硫基、环戊烯硫基、己烯硫基、环己烯硫基、庚烯硫基、环庚烯硫基、辛烯硫基、环辛烯硫基、乙炔硫基、丙炔硫基、丁炔硫基、戊炔硫基、己炔硫基、庚炔硫基或辛炔硫基。通常,根据本发明的烷基、烯基、炔基、烷氧基或硫代烷基基团可以是直链、支链或环状的,其中一个或多个非相邻的CH2基团可以被上述基团代替;此外,一个或多个H原子也可以被如下基团代替:D、F、Cl、Br、I、CN或NO2,优选F、Cl或CN,进一步优选F或CN,特别优选CN。
在每种情况下还可以被上述基团取代并可以经由任何希望的位置与所述芳族或杂芳族基团连接的具有5-80个芳族环原子的芳族或杂芳族环系,特别被认为是指衍生于如下物质的基团:苯、萘、蒽、苯并蒽、菲、苯并菲、芘、苝、荧蒽、并四苯、并五苯、苯并芘、联苯、偶苯、三联苯、三聚苯、芴、螺二芴、二氢菲、二氢芘、四氢芘、顺式或反式茚并芴、顺式或反式茚并咔唑、顺式或反式吲哚并咔唑、三聚茚、异三聚茚、螺三聚茚、螺异三聚茚、呋喃、苯并呋喃、异苯并呋喃、二苯并呋喃、噻吩、苯并噻吩、异苯并噻吩、二苯并噻吩、吡咯、吲哚、异吲哚、咔唑、吡啶、喹啉、异喹啉、吖啶、菲啶、苯并-5,6-喹啉、苯并-6,7-喹啉、苯并-7,8-喹啉、吩噻嗪、吩嗪、吡唑、吲唑、咪唑、苯并咪唑、萘并咪唑、菲并咪唑、吡啶并咪唑、吡嗪并咪唑、喹喔啉并咪唑、唑、苯并唑、萘并唑、蒽并唑、菲并唑、异唑、1,2-噻唑、1,3-噻唑、苯并噻唑、哒嗪、六氮杂苯并菲、苯并哒嗪、嘧啶、苯并嘧啶、喹喔啉、1,5-二氮杂蒽、2,7-二氮杂芘、2,3-二氮杂芘、1,6-二氮杂芘、1,8-二氮杂芘、4,5-二氮杂芘、4,5,9,10-四氮杂苝、吡嗪、吩嗪、吩嗪、吩噻嗪、荧红环、萘啶、氮杂咔唑、苯并咔啉、菲咯啉、1,2,3-三唑、1,2,4-三唑、苯并三唑、1,2,3-二唑、1,2,4-二唑、1,2,5-二唑、1,3,4-二唑、1,2,3-噻二唑、1,2,4-噻二唑、1,2,5-噻二唑、1,3,4-噻二唑、1,3,5-三嗪、1,2,4-三嗪、1,2,3-三嗪、四唑、1,2,4,5-四嗪、1,2,3,4-四嗪、1,2,3,5-四嗪、嘌呤、蝶啶、吲嗪和苯并噻二唑,或衍生于这些体系的组合的基团。这些基团可以各自被如上提及的基团取代。
在本发明的优选实施方式中,键合至氮原子的基团R1代表具有5至60个芳族环原子、优选具有6至24个芳族环原子的芳族或杂芳族环系,其也可以被一个或多个基团R2取代,或者代表如上提及的式(3)或(4)的基团。
在本发明化合物的另外优选的实施方式中,X代表C(R1)2。在该情况中,键合至该碳原子的基团R1优选在每次出现时相同或不同地代表具有1至10个C原子的直链烷基基团或者具有3至10个C原子的支链或环状烷基基团,其中上述基团中的每个可以被一个或多个基团R2取代,其中一个或多个非相邻的CH2基团可以被R2C=CR2、C≡C、Si(R2)2、C=O、O、S或CONR2代替,并且其中一个或多个H原子可以被D、F或CN代替,或者代表具有5至60个芳族环原子、优选具有5至24个芳族环原子的芳族或杂芳族环系,其也可以被一个或多个基团R2取代。键合至同一碳原子的两个基团R1也可以彼此形成脂族或芳族环系。
在本发明的另外优选的实施方式中,每个环最多一个基团Y代表N,且剩余的基团Y在每次出现时相同或不同地代表CR。特别优选Y在每次出现时相同或不同地代表CR。
因此式(1)化合物的优选实施方式是如下式(5)的化合物,
其中使用的符号具有如上提及的含义,且,如以上所描述的,存在式(2)至(4)基团中的至少一个。
式(5)结构的特别优选的实施方式是如下式(5a)的结构,
其中使用的符号具有如上提及的含义。
特别优选如下式(6)、(7)和(8)的结构,
且非常特别优选如下式(6a)、(7a)和(8a)的化合物,
其中使用的符号具有如上提及的含义。
尤其优选如下式(6b)、(7b)和(8b)的化合物,
其中使用的符号具有如上提及的含义。
此处在式(6)或(6a)或(6b)中键合至同一C原子的两个基团R1也可以与它们键合至的碳原子一起形成脂族、芳族或杂芳族环系,例如芴,且因此总体上形成螺环体系。
特别优选茚并咔唑衍生物,即,式(6)或(6a)或(6b)的化合物。
如以上所描述的,本发明的化合物包含至少一个式(2)的基团R和/或至少一个式(3)或(4)的基团R1。
在本发明另外优选的实施方式中,式(1)化合物包含一个、两个或三个式(2)至(4)中的一个或多个的基团,特别优选一个或两个式(2)至(4)中的一个或多个的基团,非常特别优选确切地一个式(2)至(4)中的一个的基团。
如果本发明的化合物包含式(3)或(4)的基团,该式(3)或(4)的基团优选键合至所述化合物的氮原子,即,优选不键合至基团X。
式(2)至(4)基团的优选实施方式描述如下。
在本发明的优选实施方式中,在每个式(2)至(4)的基团中,每个环最多一个基团Q代表N,且剩余的基团Q在每次出现时相同或不同地代表CR2,或者,如果基团Ar1或分子的剩余部分连接至Q,则Q代表C。在本发明特别优选的实施方式中,如果式(2)或(3)的基团通过Q连接至Ar1或连接至分子的剩余部分,Q代表C,且剩余的基团Q相同或不同地代表CR2,或者在式(4)中,所有Q代表CR2。
因此式(2)至(4)的优选实施方式是如下式(2a)至(4a)的基团,
其中虚线键表示所述基团与分子剩余部分的连接,且使用的符号和标记具有如上提及的含义,且在式(2a)和(3a)中,在连接基团Ar1或分子剩余部分的位置处不键合基团R2。
式(2a)至(4a)的特别优选的实施方式是式(2b)、(2c)、(2d)、(3b)、(3c)、(3d)和(4b)的结构,
其中虚线键表示所述基团与分子剩余部分的连接,且使用的其它符号和标记具有如上提及的含义。
在上述结构中,Z和W优选代表NR2,其中R2代表根据如上提及定义的芳族或杂芳族环系,其也可以被如上提及的基团取代。
此外,在如上提及的结构中键合至碳原子的基团R2优选代表H。
在本发明另外优选的实施方式中,标记p=0。
特别优选式(2b)、(3b)和(4b)的结构。
如果存在基团Ar1,则其优选代表具有6至24个芳族环原子的二价的芳族或杂芳族环系,其优选不含具有多于两个直接稠合在彼此上的六元环的稠合的芳基或杂芳基基团。优选的基团Ar1选自邻-、间-或对苯基,邻-、间-或对联苯基,三联苯基,特别是邻-、间-或对三联苯基,四联苯基,特别是邻-、间-或对四联苯基,芴,呋喃,苯并呋喃,二苯并呋喃,二苯并噻吩,吡咯,吲哚或咔唑。这些基团可以被一个或多个基团R2取代,但是优选未被取代。如果Ar1代表芴,则其优选在9位处被两个各自具有1至10个C原子的烷基基团取代。
如上提及的本发明实施方式可以根据需要彼此组合。特别是,如上提及的通式(1)或优选实施方式可以根据需要与式(2)至(4)或相应的优选实施方式组合,且可以与如上提及的其它符号和标记的优选实施方式组合。在本发明的优选实施方式中,如上提及的优选同时发生。因此,特别是,可以将式(5)、(5a)、(6)、(6a)、(6b)、(7)、(7a)、(7b)、(8)、(8a)和(8b)中的每个与式(2a)、(2b)、(2c)、(2d)、(3a)、(3b)、(3c)、(3d)、(4a)和(4b)中的每个组合。
如果在通式(1)化合物中存在一个或多个如下的基团R,其不等于H或D且不代表式(2)或(3)的基团,则这些基团优选选自N(Ar)2,优选二苯基氨基,取代或未取代的芳基胺,具有1至20个C原子、优选1至10个C原子的直链烷基基团,具有3至20个C原子、优选1至10个C原子的支链烷基基团,或者具有5至40个芳族环原子的芳族或杂芳族环系,其可以被一个或多个基团R2取代。此处芳族或杂芳族环系优选选自取代或未取代的苯基、萘基、噻吩、二苯并噻吩、二苯并呋喃、三苯基胺或这些基团的组合,所述基团中的每个可以被一个或多个基团R2取代。
在本发明的另外优选的实施方式中,在式(1)中的X代表C(R1)2,其中基团R1彼此形成环系,从而形成如下式(9)或(10)的结构:
其中使用的符号具有如上提及的含义,且Y优选在每次出现时相同或不同地代表CR1。
在本发明又一另外优选的实施方式中,在式(1)基本结构上的两个相邻基团R形成芳族环系,从而形成如下式(11)或(12)的结构:
其中使用的符号具有如上提及的含义,且Y优选在每次出现时相同或不同地代表CR1。
如上提及的相同优选适用于式(9)至(12)的化合物。
本发明化合物的实例是如下所示的结构。
可以通过本领域普通技术人员已知的合成步骤例如溴化、Suzuki偶联、Ullmann偶联、Hartwig-Buchwald偶联等制备本发明的化合物。优选通过Suzuki偶联、Ullmann偶联或Hartwig-Buchwald偶联将式(2)至(4)之一的单元引入茚并咔唑基本结构上或在桥连基中具有O或S的相应衍生物上。
因此本发明还涉及制备本发明化合物的方法,其特征在于通过Suzuki偶联、Ullmann偶联或通过Hartwig-Buchwald偶联引入式(2)、(3)或(4)的基团。
本发明还涉及包含至少一种本发明化合物和至少一种另外的化合物的混合物。如果本发明的化合物用作基质材料,则所述另外的化合物可以例如是荧光或磷光掺杂剂,特别是磷光掺杂剂。关于有机电致发光器件如下提及了适当的掺杂剂,且所述适当的掺杂剂对于本发明的混合物也是优选的。
为了从溶液或从液相处理,例如通过旋涂或通过印刷工艺进行处理,本发明化合物或混合物的溶液或制剂是必须的。可以优选使用两种或更多种溶剂的混合物。适当且优选的溶剂例如是甲苯,苯甲醚,邻-、间-或对-二甲苯,苯甲酸甲酯,二甲基苯甲醚,均三甲苯,萘满,邻二甲氧基苯,THF,甲基-THF,THP,氯苯,二烷或这些溶剂的混合物。
因此,本发明还涉及一种制剂,特别是溶液、悬浮液或微乳液,其包含至少一种本发明的化合物或混合物,以及一种或多种溶剂,特别是有机溶剂。其中可制备这种溶液的方法是本领域普通技术人员已知的,且描述在例如WO2002/072714、WO2003/019694以及其中引用的文献中。
本发明的化合物或混合物适合用于电子器件中。此处电子器件被认为是指包括至少一个包含至少一种有机化合物的层的器件。然而,此处的组件也可以包括无机材料或完全从无机材料构造的层。
因此,本发明还涉及本发明化合物或混合物在电子器件中、特别是在有机电致发光器件中的用途。
本发明又还涉及包含至少一种上述本发明化合物或混合物的电子器件。如上对于所述化合物所述的优选也适用于所述电子器件。
所述电子器件优选选自有机电致发光器件(OLED、PLED)、有机集成电路(O-IC)、有机场效应晶体管(O-FET)、有机薄膜晶体管(O-TFT)、有机发光晶体管(O-LET)、有机太阳能电池(O-SC)、有机染料敏化太阳能电池、有机光学检测器、有机光感受器、有机场猝熄器件(O-FQD)、发光电化学电池(LEC)、有机激光二极管(O-laser)和“有机等离子体发射器件”(D.M.Koller等人,Nature Photonics(自然光子学)2008,1-4),优选有机电致发光器件(OLED、PLED),特别是磷光OLED。
所述有机电致发光器件包括阴极、阳极和至少一个发光层。除了这些层之外,其还可以包括其它的层,这些层例如在每种情况下是一个或多个空穴注入层、空穴传输层、空穴阻挡层、电子传输层、电子注入层、激子阻挡层、电子阻挡层和/或电荷产生层。同样可以在两个发光层之间引入具有例如激子阻挡功能的中间层。然而,应当指出,这些层中的每个并非必须存在。此处所述有机电致发光器件可以包括一个发光层或多个发光层。如果存在多个发光层,则优选这些发光层总共具有多个在380nm和750nm之间的发光峰值,导致总体上白色发光,即,将能够发荧光或发磷光的多种发光化合物用于所述发光层中。特别优选具有三个发光层的体系,其中所述三个层显示蓝色、绿色和橙色或红色发光(对于基本结构,例如见WO2005/011013)。这些可以是荧光或磷光发光层或混合体系,其中在混合体系中,将荧光和磷光发光层彼此组合。
取决于确切的结构,根据如上所示实施方式的本发明化合物可以用于多个层中。优选如下的有机电致发光器件,其包含式(1)的化合物或根据优选实施方式的化合物作为荧光或磷光发光体、特别是磷光发光体的基质材料,和/或用于电子传输层中和/或用于电子阻挡或激子阻挡层中和/或用于空穴传输层中,其取决于确切的取代。如上所示的优选实施方式也适用于所述材料在有机电子器件中的应用。
在本发明的优选实施方式中,式(1)的化合物或根据优选实施方式的化合物在发光层中用作荧光或磷光化合物、特别是磷光化合物的基质材料。此处所述有机电致发光器件可以包括一个发光层或多个发光层,其中至少一个发光层包含至少一种本发明的化合物作为基质材料。
如果式(1)的化合物或根据优选实施方式的化合物在发光层中用作发光化合物的基质材料,则其优选与一种或多种磷光材料(三重态发光体)组合使用。在本发明意义上的磷光被认为是指从自旋多重度>1的激发态的发光,特别是从激发三重态的发光。为了本发明的目的,所有发光的过渡金属络合物和发光的镧系元素络合物,特别是所有的铱、铂和铜络合物,被认为是磷光化合物。
基于包含发光体和基质材料的整体混合物,包含式(1)的化合物或根据优选实施方式的化合物和发光化合物的混合物包含99至1体积%、优选98至10体积%、特别优选97至60体积%、特别是95至80体积%的式(1)的化合物或根据优选实施方式的化合物。相应地,基于包含发光体和基质材料的整体混合物,所述混合物包含1至99体积%、优选2至90体积%、特别优选3至40体积%、特别是5至20体积%的发光体。
本发明的另外优选的实施方式是将式(1)的化合物或根据优选实施方式的化合物与另外的基质材料组合用作磷光发光体的基质材料。可以与式(1)的化合物或根据优选实施方式的化合物组合使用的特别适当的基质材料是如下物质:芳族酮,芳族氧化膦或芳族亚砜或砜,例如根据WO2004/013080、WO2004/093207、WO2006/005627或WO2010/006680的,三芳基胺,咔唑衍生物,例如CBP(N,N-二咔唑基联苯)或公开在WO2005/039246、US2005/0069729、JP2004/288381、EP1205527或WO2008/086851中的咔唑衍生物,吲哚并咔唑衍生物,例如根据WO2007/063754或WO2008/056746的,茚并咔唑衍生物,例如根据WO2010/136109和WO2011/000455的,氮杂咔唑衍生物,例如根据EP1617710、EP1617711、EP1731584、JP2005/347160的,双极性基质材料,例如根据WO2007/137725的,硅烷,例如根据WO2005/111172的,氮杂硼杂环戊二烯或硼酸酯,例如根据WO2006/117052的,三嗪衍生物,例如根据WO2010/015306、WO2007/063754或WO2008/056746的,锌络合物,例如根据EP652273或WO2009/062578的,二氮杂硅杂环戊二烯或四氮杂硅杂环戊二烯衍生物,例如根据WO2010/054729的,二氮杂磷杂环戊二烯衍生物,例如根据WO2010/054730的,桥连的咔唑衍生物,例如根据US2009/0136779、WO2010/050778、WO2011/042107、WO2011/088877的或根据未公开的申请EP11003232.3的,苯并菲衍生物,例如根据WO2012/048781的,或内酰胺,例如根据WO2011/116865或WO2011/137951的。比实际发光体在更短波长处发光的另外的磷光发光体同样可以存在于所述混合物中作为共主体。
适当的磷光化合物(=三重态发光体)特别是如下的化合物,该化合物经适当激发时发光、优选在可见区发光,并且另外包含至少一种原子序数大于20,优选大于38但小于84,特别优选大于56但小于80的原子,特别是具有该原子序数的金属。使用的磷光发光体优选是包含铜、钼、钨、铼、钌、锇、铑、铱、钯、铂、银、金或铕的化合物,特别是包含铱或铂的化合物。为了本发明的目的,所有包含上述金属的发光化合物都被认为是磷光化合物。
申请WO00/70655、WO2001/41512、WO2002/02714、WO2002/15645、EP1191613、EP1191612、EP1191614、WO05/033244、WO05/019373、US2005/0258742、WO2009/146770、WO2010/015307、WO2010/031485、WO2010/054731、WO2010/054728、WO2010/086089、WO2010/099852、WO2010/102709、WO2011/032626、WO2011/066898、WO2011/157339或WO2012/007086公开了上述发光体的实例。一般地,根据现有技术用于磷光OLED的和在有机电致发光领域普通技术人员所已知的所有磷光络合物都是适当的,且本领域普通技术人员将能够在不需要付出创造性劳动的情况下使用其它磷光络合物。
在本发明的另外的实施方式中,本发明的有机电致发光器件不包括分离的空穴注入层和/或空穴传输层和/或空穴阻挡层和/或电子传输层,即,发光层与空穴注入层或阳极直接相邻,和/或发光层与电子传输层或电子注入层或阴极直接相邻,如在例如WO2005/053051中所描述的。还可以使用与发光层中的金属络合物相同或类似的金属络合物,作为与所述发光层直接相邻的空穴传输或空穴注入材料,如在例如WO2009/030981中所描述的。
还可以将本发明的化合物用于空穴传输层中或用于空穴注入层中或用于激子阻挡层或电子阻挡层中。
在本发明的有机电致发光器件的另外的层中,可使用根据现有技术通常使用的所有材料。因此,本领域普通技术人员将能够在不付出创造性劳动的情况下与本发明式(1)的化合物或根据优选实施方式的化合物组合使用已知用于有机电致发光器件的所有材料。
还优选如下的有机电致发光器件,其特征在于,借助于升华方法施加一个或多个层,其中在真空升华设备中,在小于10-5毫巴、优选小于10-6毫巴的初压下气相沉积所述材料。然而,所述初压也可以甚至更低或更高,例如小于10-7毫巴。
同样优选如下的有机电致发光器件,其特征在于通过OVPD(有机气相沉积)方法或借助于载气升华来施加一个或多个层,其中,在10-5毫巴至1巴的压力下施加所述材料。该方法中的特别的例子是OVJP(有机蒸气喷印)方法,其中所述材料通过喷管直接施加,并且因此是结构化的(例如M.S.Arnold等人,Appl.Phys.Lett.(应用物理快报)2008,92,053301)。
此外优选如下的有机电致发光器件,其特征在于从溶液中例如通过旋涂,或借助于任何希望的印刷方法例如喷墨印刷、LITI(光引发热成像,热转印)、丝网印刷、柔性版印刷、平版印刷或喷嘴印刷,来产生一个或多个层。对于这种目的,例如通过适当取代获得的可溶的化合物是必要的。这些方法也特别适合于低聚物、树枝状大分子和聚合物。
混合方法同样是可行的,其中例如从溶液施加一个或多个层且通过气相沉积施加一个或多个另外的层。因此,可以例如从溶液施加发光层且通过气相沉积施加电子传输层。
这些方法通常为本领域普通技术人员所已知,且他们能够在不付出创造性劳动的情况下将其应用于包含本发明化合物的有机电致发光器件中。
在用于有机电致发光器件中时,本发明的化合物相对于现有技术具有一个或多个以下令人惊讶的优点:
1.与根据现有技术的体系相比,相应的器件的功率效率变得更高。
2.与根据现有技术的体系相比,相应器件的稳定性变得更高,这特别是从长得多的寿命可以明显看出。
3.根据本发明的有机电致发光器件具有降低的工作电压。
4.如果本发明的化合物用作磷光发光体的基质材料,在仅使用小于10体积%的低发光体浓度的范围中可以获得非常好的结果。
5.本发明的化合物具有非常好的热稳定性。
具体实施方式
现在将通过以下实施例更详细地示例本发明,但不希望因此限制本发明。
实施例:
除非另外指明,以下合成在保护气体气氛中在干燥溶剂中进行。溶剂和试剂可以购买自例如Sigma-ALDRICH或ABCR。在每种情况中,对于从文献中已知的化合物,也示出了相应的CAS号。
部分A:合成前体
方案1:
S1:3-溴-9-[1,1';3',1'']三联苯-5'-基-9H-咔唑
将10g(41mmol)3-溴-9H-咔唑(CAS86-74-8)和16g(45mmol,1.1当量)5’-碘-[1,1’;3’,1’’]三联苯溶于与51g(270mmol,6.6当量)元素铜、115g(540mmol,13当量)碳酸钾和0.52g(4.5mmol,0.11当量)18-冠-6一起的500ml对二甲苯中,并加热回流。当反应完全时,将混合物用水提取三次,将有机相用硫酸钠干燥,在真空中除去溶剂,并通过柱色谱法(乙酸乙酯/庚烷)纯化获得的固体,给出17g(36mmol,53%)产物。
类似地制备如下的合成子:
方案2:
S5:9-[1,1';3',1'']-三联苯-5'-基-3-(4,4,5,5-四甲基-1,3,2-二氧杂环戊硼烷-2-基)-9H-咔唑
首先将20g(42mmol)3-溴-9-[1,1';3',1'']三联苯-5'-基-9H-咔唑S1、13g(50mmol,1.2当量)联硼酸频那醇酯(CAS73183-34-4)和12g(130mmol,3当量)乙酸钾引入300ml1,4-二烷中,并用氮脱气30分钟。然后加入470mg(0.84mmol,0.02当量)1,1‘-双(二苯基膦)二茂铁和190mg(0.84mmol,0.02当量)乙酸钯(II),并加热至100℃的内部温度。当反应完全时,将乙酸乙酯加入批料中,并用水将混合物提取三次。蒸发有机相,从庚烷中沉淀出硼酸酯。从乙腈中重结晶给出20g(38mmol,91%)产物。
类似地制备如下的合成子:
部分B:合成本发明的化合物
方案3:
B1:12,12-二甲基-10-(9-[1,1';3',1'']三联苯-5'-基-9H-咔唑-3-基)-10,12-二氢-10-氮杂茚并[2,1-b]芴
将7.6g(33mmol)12,12-二甲基-10,12-二氢-10-氮杂茚并[2,1-b]芴(WO2010/136109)、17g(36mmol,1.1当量)3-溴-9-[1,1';3',1'']三联苯-5'-基-9H-咔唑S1和12.1g(12mmol,0.36当量)碘化铜(I)悬浮在具有150g(706mmol,4当量)磷酸钾的1L1,4-二烷中。然后将反应混合物脱气30分钟,在保护气体下加入17.6ml(147mmol,0.83当量)反式环己胺。将批料加热回流12小时,当反应完全时,加入二氯甲烷。将沉淀的固体用抽吸过滤,溶于甲苯中,并通过硅胶过滤。在真空中除去溶剂后,将残余物从甲苯/庚烷重结晶数次,最终进行升华,给出17.6g(33.5mmol,57%)无色固体,其HPLC纯度>99.9%。
类似于B1制备如下的化合物:
方案4:
B28:12,12-二甲基-10-苯基-7-(9-[1,1';3',1'']三联苯-5'-基-9H-咔唑-3-基)-10,12-二氢-10-氮杂茚并[2,1-b]芴
首先将20g(38mmol)9-[1,1';3',1'']-三联苯-5'-基-3-(4,4,5,5-四甲基-1,3,2-二氧杂环戊硼烷-2-基)-9H-咔唑S5和17g(38mmol,1当量)7-溴-12,12-二甲基-10-苯基-10,12-二氢-10-氮杂茚并[2,1-b]芴(WO2010/136109)引入250ml丙酮中,然后加入62ml(84mmol,2.2当量)四乙基氢氧化铵(在水中20%的溶液)。将反应混合物用氮脱气30分钟,然后加入0.88g(0.76mmol,0.02当量)四(三苯基膦)钯(0),将混合物在50℃下搅拌过夜。将沉淀的固体用抽吸过滤,借助于热提取、从庚烷/甲苯反复重结晶和最终的升华进行纯化,给出14g(19mmol,51%)的产物,其HPLC纯度>99.9%。
类似地制备如下化合物:
方案5:
3,7-二溴-5-苯基二苯并磷杂环戊二烯5-氧化物:
在-78℃下,在30g(53mmol)4,4'-二溴-2,2'-二碘联苯在500ml干燥THF的溶液中加入66ml(106mmol,2.0当量)正丁基锂(在己烷中1.6M),将混合物在该温度下搅拌30分钟。然后逐滴加入11g(56mmol,1.06当量)二氯苯基氧化膦,当反应完全时,使反应混合物暖至室温。在使用水进行水解之后,将有机相用醚提取,将合并的有机相用硫酸钠干燥。在旋转蒸发仪上除去溶剂,通过柱色谱法(庚烷/乙酸乙酯6:1)纯化获得的粗产物,给出20g(45mmol,85%)的产物。
3-溴-5-苯基二苯并磷杂环戊二烯5-氧化物:
将在400ml干燥THF中的20g(45mmol)3,7-二溴-5-苯基二苯并磷杂环戊二烯5-氧化物冷却至-78℃,在该温度下缓慢加入28ml(45mmol,1.0当量)正丁基锂(在己烷中1.6M)。在1小时之后,将混合物缓慢暖至室温,加入50ml1M的HCl,然后将混合物搅拌另外的2小时。然后将混合物用乙酸乙酯提取,用水洗涤,将合并的有机相用硫酸钠干燥。在旋转蒸发仪中除去溶剂,使用所获得的产物而无需另外的纯化步骤,给出16g(43mmol,96%)单溴化物。
(2-氯苯基)-(5-氧-5-苯基-5H-5λ*5*-二苯并磷杂环戊二烯-3-基)胺:
首先将16g(43mmol)3-溴-5-苯基二苯并磷杂环戊二烯5-氧化物引入与6.6ml(52mmol,1.2当量)2-氯苯胺和11g(112mmol,2.6当量)叔丁醇钠一起的400ml甲苯中,加入480mg(0.86mmol,0.2当量)DPPF和97mg(0.43mmol,0.01当量)乙酸钯。将反应混合物加热回流过夜,当反应完全时,加入200ml水。进行相分离,将水相用甲苯提取。将合并的有机相用硫酸钠干燥并通过氧化铝过滤。在真空中除去溶剂,通过柱色谱法(庚烷/乙酸乙酯5:1)纯化所获得的残余物,给出16g(39mmol,91%)的产物。
12-苯基-10H-10-氮杂-12-磷杂茚并[2,1-b]芴12-氧化物:
首先将16g(39mmol)(2-氯苯基)-(5-氧-5-苯基-5H-5λ*5*-二苯并磷杂环戊二烯-3-基)胺和14g(100mmol,2.6当量)碳酸钾引入250mlNMP中,加入1.4g(13mmol,0.34当量)特戊酸。然后加入3.1ml三叔丁基膦在甲苯中1M的溶液(3.1mmol,0.08当量)和440mg(2.0mmol,0.05当量)乙酸钯,将反应混合物在130℃的内部温度下加热过夜。将批料冷却至室温,加入300ml甲苯和100ml水。将水相用甲苯提取三次,将合并的有机相同样用水洗涤三次并最终用硫酸钠干燥。除去溶剂之后,通过柱色谱法纯化所获得的粗产物,给出13g(35mmol,89%)的产物。
B31:12-苯基-10-(9-苯基-9H-咔唑-3-基)-10H-10-氮杂-12-磷杂茚并[2,1-b]芴12-氧化物:
类似于B1进行该试验,给出14g(23mmol,67%)目标产物B31。
部分C:比较热稳定性
如果将100mg化合物ICvCbz1在真空中(压力约10-2毫巴)在玻璃安瓿中熔融,并在烤箱中在310℃下储存14天,根据HPLC的纯度从99.7%改变为89.2%。使用化合物B29时,在相同步骤中根据HPLC的纯度从99.8%改变为99.6%,即,在相同的热负荷下形成少得多的分解产物。这是显著的工业优势,因为在工业制造有机电致发光器件中材料要长时间经受高温。
部分D:有机电致发光器件
通过根据WO2004/058911的一般方法制造本发明的OLED和现有技术的OLED,此处将该方法调整以适应所述环境(层厚度的改变,材料)。
在以下实施例V1至E17中给出了多种OLED的数据(见表1和2)。为改进处理,将已经涂有厚度为50nm结构化ITO(氧化铟锡)的玻璃板涂覆20nm的PEDOT:PSS(聚(3,4-亚乙基二氧噻吩)聚磺化苯乙烯,作为CLEVIOSTMP VP AI4083购买自德国Heraeus Precious MetalsGmbH,从水溶液中旋涂施加)。这些涂覆的玻璃板形成基底,将OLED施加到所述基底上。所述OLED具有如下的层结构:基底/空穴传输层(HTL)/中间层(IL)/电子阻挡层(EBL)/发光层(EML)/空穴阻挡层(HBL)/电子传输层(ETL)和最后的厚度100nm的铝阴极。所述OLED的确切结构显示于表1中。用于制造OLED所需的材料显示于表3中。
在真空室中通过热气相沉积施加所有材料。此处的发光层总是由至少一种基质材料(主体材料)和发光掺杂剂(发光体)组成,通过共蒸发使所述一种或多种基质材料以一定的体积比例与所述发光掺杂剂混合。此处例如IC1:IC2:TEG1(30%:60%:10%)的表达是指,材料IC1以30%的体积比例存在于该层中,IC2以60%的体积比例存在于该层中,而TEG1以10%的体积比例存在于该层中。类似的情况适用于电子传输层。
通过标准方法表征所述OLED。为此目的,确定电致发光光谱、电流效率(以cd/A测量)、从呈现朗伯发射特性的电流/电压/发光密度特性线(IUL特性线)计算的作为发光密度函数的功率效率(以lm/W测量)和外量子效率(EQE,以百分比测量),以及寿命。确定在1000cd/m2发光密度下的电致发光光谱,并从其计算CIE1931x和y色度坐标。在表2中的表达U1000表示1000cd/m2发光密度所需要的电压。CE1000和PE1000表示在1000cd/m2达到的电流和功率效率。最后,EQE1000表示在1000cd/m2工作发光密度下的外量子效率。寿命LT限定了在恒定电流下操作时发光密度从初始发光密度L0降低至特定比例L1时经历的时间。在表2中的表述L0=10000cd/m2和L1=70%是指,在LT栏所示的寿命对应于初始发光密度从10000cd/m2降低至7000cd/m2时经历的时间。
表2中总结了多种OLED的数据。实施例V1-V8是根据现有技术的对比例,实施例E1-E17显示了包含本发明材料的OLED的数据。
以下更详细地解释了一些实施例,以示例本发明混合物的优势。然而,应当指出这仅代表了在表2中显示的数据的选择。如从表中可看出的,在使用未更详细描述的本发明的化合物时,相对于现有技术也获得显著改进。
将本发明化合物用作混合基质体系的组分
在如下的实施例中,显示了其中选择混合比率以获得最大寿命的OLED的数据。
如果比较实施例V2和E1,可以看出,与根据现有技术具有三联苯基取代基的化合物IC2相比,根据本发明的在氮上带有咔唑取代基的化合物B2给出好得多的值。使用B2时,功率效率改进了几乎15%,寿命改进了约20%。
在用咔唑取代基代替茚并咔唑取代基时也获得显著改进(实施例V1和E2)。在这种情况中,寿命增加至几乎两倍,且功率效率20%的改进同样是非常高的。与双咔唑BCbz1相比,使用B29也获得显著改进的寿命和功率效率(实施例V3和E2)。
在用非桥连的咔唑代替桥连的咔唑时(实施例V5和E2),寿命增加了60%。虽然使用根据现有技术的化合物ICvCbz1比使用根据本发明的化合物B29获得略好的量子效率,然而,由于更好的电压而产生了相同的功率效率。
如果包含现有技术材料的OLED中的发光体浓度降低至显著低于10%,则效率和寿命显著降低。例如,当使用化合物IC2时,当发光体浓度从10%降低至4%时,外量子效率降低了几乎10%。更显著得多的是寿命降低至原来的1.5分之一(实施例V7和V8)。相反,使用本发明的材料时,没有观察到性能的降低(实施例E1与E12相比)或甚至观察到性能略微改进(实施例E2与E13-E15相比)。
在用作磷光OLED中的基质材料时,与现有技术相比,本发明的材料因此给出在一些或所有参数上的显著改进。此外,使用本发明的材料时可以获得具有低发光体浓度的OLED而不降低性能。
表2:OLED的数据
表3:用于OLED的材料的结构式
Claims (18)
1.式(1)的化合物,
其中,以下适用于使用的符号:
Y在每次出现时相同或不同地是CR或N;
X选自C(R1)2、O、S、PR1、P(=O)R1或BR1;
R、R1在每次出现时相同或不同地是H,D,F,Cl,Br,I,N(R2)2,N(Ar)2,C(=O)Ar,P(=O)Ar2,S(=O)Ar,S(=O)2Ar,CR2=CR2Ar,CN,NO2,Si(R2)3,B(OR2)2,OSO2R2,具有1至40个C原子的直链烷基、烷氧基或硫代烷氧基基团或者具有3至40个C原子的支链或环状的烷基、烷氧基或硫代烷氧基基团,其中上述基团中的每个可以被一个或多个基团R2取代,其中一个或多个非相邻的CH2基团可以被R2C=CR2、C≡C、Si(R2)2、C=O、C=NR2、P(=O)(R2)、SO、SO2、NR2、O、S或CONR2代替,并且其中一个或多个H原子可以被D、F、Cl、Br、I、CN或NO2代替,或者具有5至60个芳族环原子的芳族或杂芳族环系,其在每种情况下可以被一个或多个基团R2取代,或者具有5至40个芳族环原子的芳氧基或杂芳氧基基团,其可以被一个或多个基团R2取代,或者具有5至40个芳族环原子的芳烷基或杂芳烷基基团,其可以被一个或多个基团R2取代,或这些体系的组合;此处两个或更多个取代基R与它们键合至的原子一起,或者两个取代基R1与它们键合至的原子一起,也可以彼此形成单环或多环的脂族或芳族环系;
Ar在每次出现时相同或不同地是具有5至40个芳族环原子的芳族或杂芳族环系,其可以被一个或多个基团R3取代;
R2在每次出现时相同或不同地是H,D,F,Cl,Br,I,N(R3)2,N(Ar)2,C(=O)Ar,P(=O)Ar2,S(=O)Ar,S(=O)2Ar,CR3=CR3Ar,CN,NO2,Si(R3)3,B(OR3)2,OSO2R3,具有1至40个C原子的直链烷基、烷氧基或硫代烷氧基基团或者具有3至40个C原子的支链或环状的烷基、烷氧基或硫代烷氧基基团,其中上述基团中的每个可以被一个或多个基团R3取代,其中一个或多个非相邻的CH2基团可以被R3C=CR3、C≡C、Si(R3)2、C=O、C=NR3、P(=O)(R3)、SO、SO2、NR3、O、S或CONR3代替,并且其中一个或多个H原子可以被D、F、Cl、Br、I、CN或NO2代替,或者具有5至60个芳族环原子的芳族或杂芳族环系,其在每种情况下可以被一个或多个基团R3取代,或者具有5至40个芳族环原子的芳氧基或杂芳氧基基团,其可以被一个或多个基团R3取代,或者具有5至40个芳族环原子的芳烷基或杂芳烷基基团,其可以被一个或多个基团R3取代,或这些体系的组合;
R3在每次出现时相同或不同地是H,D,或者具有1至20个C原子的脂族烃基团,或者具有5至40个环原子的芳基或杂芳基基团,或者这些基团的组合;
条件是,如果基团R、R1、R2、R3、Ar或Ar1中的一个或多个含有不符合式(2)、(3)或(4)的杂芳基基团,则它们不是缺电子的杂芳基基团;
特征在于存在至少一个如下的基团R,该基团R在每次出现时相同或不同地代表如下式(2)的基团,
其中虚线键表示式(2)基团的连接,R2具有如上提及的含义,且此外:
如果式(2)的基团通过Q连接至Ar1或连接至分子的剩余部分,则Q是C;或者在其它情况中,Q在每次出现时相同或不同地是CR2或N;
Z是NR2或S;
Ar1是具有5至40个芳族环原子的二价芳族或杂芳族环系,其可以被一个或多个基团R2取代;
p是0或1;
和/或特征在于存在至少一个代表如下式(3)或(4)基团的基团R1,
其中虚线键表示式(3)或(4)基团的连接,R2、Ar1、Q和p具有如上提及的含义,且此外:
W是NR2、O或S。
2.根据权利要求1所述的化合物,其特征在于,键合至氮原子的基团R1代表具有5至60个芳族环原子的芳族或杂芳族环系,其也可以被一个或多个基团R2取代,或者代表式(3)或(4)的基团。
3.根据权利要求1或2所述的化合物,其特征在于,X代表C(R1)2,其中R1在每次出现时相同或不同地代表具有1至10个C原子的直链烷基基团或者具有3至10个C原子的支链或环状烷基基团,其中上述基团中的每个可以被一个或多个基团R2取代,其中一个或多个非相邻的CH2基团可以被R2C=CR2、C≡C、Si(R2)2、C=O、O、S或CONR2代替,并且其中一个或多个H原子可以被D、F或CN代替,或者代表具有5至60个芳族环原子的芳族或杂芳族环系,其也可以被一个或多个基团R2取代;此处基团R1也可以彼此形成芳族或脂族环系。
4.根据权利要求1至3中的一项或多项所述的化合物,其特征在于,每个环最多一个基团Y代表N,且剩余的基团Y在每次出现时相同或不同地代表CR。
8.根据权利要求1至7中的一项或多项所述的化合物,其特征在于式(2)至(4)的基团选自式(2a)至(4a)的基团,
其中使用的符号和标记具有在权利要求1中给出的含义,且在式(2a)和(3a)中,在所述基团连接至Ar1或者分子剩余部分的位置处没有键合基团R2。
10.根据权利要求8或9所述的化合物,其特征在于在式(2a)至(4b)中键合至碳原子的基团R2代表H。
11.根据权利要求1至10中的一项或多项所述的化合物,其特征在于Z或W代表NR2,其中R2代表芳族或杂芳族环系。
12.根据权利要求1至11中的一项或多项所述的化合物,其选自式(9)、(10)、(11)或(12)的结构,
其中使用的符号具有在权利要求1中给出的含义。
13.制备根据权利要求1至12中的一项或多项所述的化合物的方法,其特征在于通过Suzuki偶联、Ullmann偶联或通过Hartwig-Buchwald偶联引入式(2)、(3)或(4)的基团。
14.一种混合物,其包含至少一种根据权利要求1至12中的一项或多项所述的化合物和至少一种荧光或磷光掺杂剂。
15.一种制剂,特别是溶液、悬浮液或微乳液,其包含至少一种根据权利要求1至12中的一项或多项所述的化合物或根据权利要求14所述的混合物和一种或多种溶剂。
16.根据权利要求1至12中的一项或多项所述的化合物或根据权利要求14所述的混合物在电子器件中的用途。
17.一种电子器件,其包含至少一种根据权利要求1至12中的一项或多项所述的化合物或根据权利要求14所述的混合物,其中所述电子器件特别是选自有机电致发光器件、有机集成电路、有机场效应晶体管、有机薄膜晶体管、有机发光晶体管、有机太阳能电池、有机染料敏化太阳能电池、有机光学检测器、有机光感受器、有机场猝熄器件、发光电化学电池、有机激光二极管和“有机等离子体发射器件”。
18.根据权利要求17所述的电子器件,特征在于其为有机电致发光器件,且根据权利要求1至12中的一项或多项所述的化合物用作发光层中磷光化合物的基质材料。
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Also Published As
Publication number | Publication date |
---|---|
IN2014KN00846A (zh) | 2015-10-02 |
CN103842339B (zh) | 2017-08-08 |
KR20140069199A (ko) | 2014-06-09 |
JP2014528942A (ja) | 2014-10-30 |
JP6174030B2 (ja) | 2017-08-02 |
AU2012313001B2 (en) | 2017-03-09 |
TW201326360A (zh) | 2013-07-01 |
BR112014006697A2 (pt) | 2017-03-28 |
SG11201400709VA (en) | 2014-06-27 |
KR102077994B1 (ko) | 2020-02-17 |
RU2626977C2 (ru) | 2017-08-02 |
EP2758372A1 (de) | 2014-07-30 |
TWI570217B (zh) | 2017-02-11 |
US9818948B2 (en) | 2017-11-14 |
WO2013041176A1 (de) | 2013-03-28 |
CA2849087A1 (en) | 2013-03-28 |
AU2012313001A1 (en) | 2014-05-01 |
EP2758372B1 (de) | 2017-05-17 |
RU2014115454A (ru) | 2015-10-27 |
US20140225046A1 (en) | 2014-08-14 |
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