CN101425461B - 提高用于无孔间隙填充的介电膜质量的方法和系统 - Google Patents

提高用于无孔间隙填充的介电膜质量的方法和系统 Download PDF

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CN101425461B
CN101425461B CN2008101734168A CN200810173416A CN101425461B CN 101425461 B CN101425461 B CN 101425461B CN 2008101734168 A CN2008101734168 A CN 2008101734168A CN 200810173416 A CN200810173416 A CN 200810173416A CN 101425461 B CN101425461 B CN 101425461B
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oxide layer
silicon oxide
silicon
substrate
room temperature
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CN101425461A (zh
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阿布海杰特·巴苏·马利克
杰弗里·C·芒罗
王林林
斯里尼瓦斯·D·内曼尼
郑宜
袁正
迪米特里·卢伯米尔斯基
叶怡利
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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CN2008101734168A 2007-10-22 2008-10-22 提高用于无孔间隙填充的介电膜质量的方法和系统 Expired - Fee Related CN101425461B (zh)

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US11/876,541 US7541297B2 (en) 2007-10-22 2007-10-22 Method and system for improving dielectric film quality for void free gap fill
US11/876,541 2007-10-22

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CN101425461A CN101425461A (zh) 2009-05-06
CN101425461B true CN101425461B (zh) 2010-08-25

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US (1) US7541297B2 (enExample)
EP (1) EP2053640A3 (enExample)
JP (2) JP2009152551A (enExample)
KR (1) KR101019768B1 (enExample)
CN (1) CN101425461B (enExample)
SG (1) SG152169A1 (enExample)
TW (1) TWI351061B (enExample)

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US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
US7790634B2 (en) * 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) * 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
KR100748559B1 (ko) * 2006-08-09 2007-08-10 삼성전자주식회사 플래시 메모리 장치 및 그 제조 방법
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7745352B2 (en) * 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
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CN101425461A (zh) 2009-05-06
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SG152169A1 (en) 2009-05-29
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US20090104789A1 (en) 2009-04-23
EP2053640A3 (en) 2012-10-24
US7541297B2 (en) 2009-06-02
JP2009152551A (ja) 2009-07-09
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TW200933739A (en) 2009-08-01
EP2053640A2 (en) 2009-04-29

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