US5623157A - Semiconductor device having a lead including aluminum - Google Patents
Semiconductor device having a lead including aluminum Download PDFInfo
- Publication number
- US5623157A US5623157A US08/483,049 US48304995A US5623157A US 5623157 A US5623157 A US 5623157A US 48304995 A US48304995 A US 48304995A US 5623157 A US5623157 A US 5623157A
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- United States
- Prior art keywords
- layer
- conductive layer
- titanium
- film
- conductive
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 90
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 52
- 239000010936 titanium Substances 0.000 claims abstract description 52
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 109
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 138
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 18
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 14
- 239000010407 anodic oxide Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910021341 titanium silicide Inorganic materials 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 2
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010420 art technique Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Definitions
- the present invention relates to an electronic circuit which is formed on an insulating substrate and has a thin semiconductor layer of silicon, for example, forming thin-film transistors, the thin semiconductor layer being required to be connected with conductive interconnects.
- the thickness of the active layer is decreased below 1500 ⁇ , for example, between about 100 to 750 ⁇ , then the characteristics of the TFTs are improved.
- electrodes should be formed on such a thin semiconductor layer, or an active layer, because the thickness of the silicide layer grows almost up to the thickness of the semiconductor layer, thus severely deteriorating the electrical characteristics of the contacts.
- a stress such as a voltage is kept applied to the contacts for a long time, the contacts deteriorate seriously.
- thermal treatment effected below 400° C., typically 200°-350° C., within hydrogen ambient is needed after formation of the electrodes on the semiconductor layer.
- the thermal processing greatly promotes growth of the silicide, leading to deterioration of the characteristics of the TFTs.
- the present invention resides in an electronic circuit which is formed on an insulating substrate and has a semiconductor layer consisting mainly of silicon, the thickness of the semiconductor layer being less than 1500 ⁇ , preferably between 100 ⁇ and 750 ⁇ .
- the invention is applicable to an electronic circuit having TFTs each provided with an active layer having a thickness less than 1500 ⁇ .
- the effects of the present invention become conspicuous as the thickness of the semiconductor layer decreases.
- the above-described semiconductor layer in the form of a thin film is either in intimate contact with the top surface of the insulating substrate as made of glass or formed over this substrate via some insulating film.
- a first layer consisting principally of titanium and nitrogen is partially or totally in intimate contact with the semiconductor layer.
- a second layer consisting principally of aluminum is formed on the top surface of the first layer.
- the first and second layers are photolithographically patterned into conductive interconnects.
- the bottom surface of the second layer is substantially totally in intimate contact with the first layer. It is possible to form a third layer consisting mainly of titanium and nitrogen on the second layer.
- the above-described semiconductor layer in the form of a thin film is either in intimate contact with the insulating substrate as made of glass or formed over this substrate via some insulating film.
- a first layer containing both titanium and silicon is partially or totally in intimate contact with the semiconductor layer.
- a second layer consisting chiefly of titanium and nitrogen is in intimate contact with the top surface of the first layer.
- a third layer consisting principally of aluminum is formed on the top surface of the second layer.
- the first through third layers are photolithographically patterned into conductive interconnects. Of course, other layer may be formed on the third layer.
- the above-described semiconductor layer in the form of a thin film is either in intimate contact with the insulating substrate as made of glass or formed over this substrate via some insulating film.
- a first layer containing both titanium and silicon as main constituents is partially or totally in intimate contact with the semiconductor layer.
- a second layer consisting chiefly of titanium and nitrogen is in intimate contact with the top surface of the first layer.
- a third layer consisting principally of aluminum is formed on the top surface of the second layer.
- the first through third layers are photolithographically patterned into conductive interconnects. This embodiment is characterized in that the ratio of the titanium to the nitrogen in the first layer is greater than the titanium/nitrogen ratio of the second layer.
- the portions of the thin semiconductor film with which the first layer is in intimate contact show an N- or P-type conductivity.
- the dose in these portions is 1 ⁇ 10 19 to 1 ⁇ 10 20 /cm 2 .
- the impurity may be introduced by a well-known ion implantation method or plasma doping method. Where such impurity ions are accelerated to a high energy and introduced, the dose is preferably between 0.8 ⁇ 10 15 and 1 ⁇ 10 17 /cm 2 .
- a laser doping method using laser irradiation within an ambient of an impurity gas may be utilized. This method is described in Japanese Patent application Ser. No. 283981/1991, filed Oct. 4, 1991, and No. 290719/1991, filed Oct. 8, 1991.
- the sheet resistance of these portions is less than 1 k ⁇ /cm 2 .
- Elements which can be added to the semiconductor layer are phosphorus, boron, arsenic, and others. Those portions of the semiconductor layer which are in contact with the conductive interconnects may be parts of doped regions such as the source and drain regions of the TFTs. Preferably, the sheet resistance of the semiconductor layer is less than 500 ⁇ /.
- a silicon oxide layer may be in intimate contact with the bottom surface of the thin semiconductor layer.
- the silicon oxide film may contain the same impurity as the impurity contained in the semiconductor layer.
- the ratio of the titanium to the nitrogen contained as main constituents may differ according to the thickness.
- other elements such as silicon and oxygen can be contained as main constituents.
- that portion of the first layer which is close to the semiconductor layer may consist principally of titanium and silicon.
- That portion of the first layer which is close to the second layer may consist mainly of titanium and nitrogen.
- the ratio of nitrogen to titanium may be set close to a stoichiometric ratio (exceeding 0.8).
- the constituents may be made to vary continuously.
- a stoichiometric material titanium nitride
- titanium nitride titanium nitride
- the material shows a high contact resistance with silicon. Therefore, it is not desired to use such a material directly for formation of contacts.
- a stoichiometric material titanium silicide
- titanium silicide titanium silicide
- aluminum tends to easily diffuse. For example, the aluminum of the second layer diffuses through the first layer, thus forming aluminum silicide in the semiconductor layer.
- That portion which is in contact with the second layer is made of substantially stoichiometric titanium nitride and hence the titanium nitride has excellent barrier characteristics. This prevents the aluminum of the second layer from diffusing into the first layer.
- the portion in contact with the semiconductor layer is made of substantially stoichiometric titanium silicide. Thus, good Ohmic contacts can be derived.
- titanium silicide When a film of titanium silicide is formed, it is not necessary to intentionally add silicon. Titanium reacts with the silicon contained in the semiconductor layer. As a result, titanium silicide is automatically formed. For example, therefore, similar effects can be produced by depositing titanium containing less nitrogen onto the portion close to the semiconductor layer and depositing titanium containing more nitrogen onto the portion close to the second layer.
- the whole first layer when the whole first layer is viewed, it consists mainly of titanium and nitrogen.
- the ratio of nitrogen to titanium in the first layer is 0.5 to 1.2.
- This material containing titanium and nitrogen as main constituents can make Ohmic contacts with a conductive oxide such as indium tin oxide, zinc oxide, and nickel oxide. Where aluminum and such a conductive oxide together form a junction, a thick layer of aluminum oxide is formed at this junction, and it is impossible to have good contacts.
- a chromium layer has been formed between aluminum and a conductive oxide. Since the chromium is poisonous, alternative materials have been sought for. Materials used in the present invention and consisting mainly of titanium and nitrogen are excellent also in this respect.
- FIGS. 1(A) to 1(D) are cross sections of a circuit using TFTs according to the invention, illustrating the sequence in which the circuit is fabricated;
- FIG. 2(A) is a vertical cross section of an electronic circuit according to the invention.
- FIG. 2(B) is a top view of another electronic circuit according to the invention.
- FIG. 3 is a graph illustrating the characteristic curve a of TFTs fabricated according to the invention, as well as the characteristic curve b of TFTs fabricated by the prior art method;
- FIGS. 4(A) and 4(B) are photographs of contact holes in TFTs
- FIG. 5(A) is a schematic view illustrating the contact hole shown in FIG. 4(A);
- FIG. 5(B) is a schematic view illustrating the contact hole shown in FIG. 4(B);
- FIG. 8 is a schematic cross section of a device comprising a plurality of TFTs according to the invention, the TFTs being formed on a substrate;
- FIGS. 7(A) to 7(H) are cross sections of a TFT according to the invention, illustrating the sequence in which the TFT is fabricated.
- FIGS. 8(A) to 8(C) are cross sections of TFTs according to the invention, illustrating the contacts of the source or drain.
- Example 1 is shown in FIGS. 1, (A)-(D), and 2, (A)-(B).
- FIGS. 1, (A)-(D) illustrate the sequence in which an electronic circuit having TFTs is fabricated. Description of conventional steps is omitted.
- silicon oxide was deposited as a silicon oxide film 2 forming a base film on a glass substrate 1 made of Corning 7059.
- An amorphous silicon film 3 having a thickness of 500 to 1500 ⁇ , preferably 500 to 750 ⁇ , was formed on the silicon oxide film 2.
- a protective layer 4 was formed on the amorphous silicon film 3.
- the laminate was annealed at 450° to 600° C. for 12 to 48 hours to crystallize the amorphous silicon film. Of course, laser annealing or other similar means can be used for the crystallization (FIG. 1(A)).
- the silicon film was photolithographically patterned into island-shaped semiconductor regions 5.
- a silicon oxide film 6 having a thickness of 500 to 1500 ⁇ , preferably 800 to 1000 ⁇ , was formed on the semiconductor regions 5 to form a gate oxide film.
- gate interconnects and electrodes 7 were fabricated from aluminum.
- the aluminum interconnects and electrodes 7 were anodized to form an aluminum oxide coating around the interconnects and electrodes 7.
- the gate electrodes can be made of silicon, titanium, tantalum, tungsten, molybdenum, or other material.
- an impurity such as phosphorus was implanted by plasma doping or other method to form doped silicon regions 8 aligned with the gate electrodes 7. Then, the doped regions 8 were recrystallized by thermal annealing, laser annealing, or other method to form source and drain regions of TFTs (FIG. 1(B)).
- silicon oxide was deposited as an interlayer insulator 9.
- a conductive transparent oxide such as ITO (indium tin oxide) was deposited.
- the ITO film was photolithographically patterned into pixel electrodes 10 of an active-matrix liquid crystal display. Contact holes were formed in the interlayer insulator 9 to expose parts of the doped regions, or the source and drain regions.
- a first layer consisting mainly of titanium and nitrogen was formed by sputtering.
- a second layer made of aluminum was formed by sputtering in the manner described below.
- a target made of titanium was placed in a sputter chamber. Films were formed within argon ambient. The sputtering pressure was 1 to 10 mtorr. First, a layer having titanium as its main constituent but containing little nitrogen was formed up to a thickness of 50 to 500 ⁇ . Besides argon, nitrogen was introduced into the sputter chamber. Within this ambient, a film was formed by sputtering. As a result, a layer of substantially stoichiometric titanium nitride and having a thickness of 200 to 1000 ⁇ was formed. At this time, the percentage of nitrogen in the sputtering ambient was in excess of 40%.
- the deposition rate by sputtering is affected greatly by the partial pressure of the nitrogen as well as by the sputtering pressure.
- the deposition rate within an ambient consisting only of argon is generally 3 to 5 times as high as the deposition rate within an ambient containing more than 20% nitrogen.
- ammonia, hydradine, or other substance can be used instead of nitrogen.
- the resistivity of the produced film varies, depending on the partial pressure of nitrogen during sputtering. Since the film is used to form conductive interconnects, a lower resistivity is desired.
- an optimum partial pressure of nitrogen is adopted.
- an ambient containing 100% nitrogen produces a lower resistivity than the resistivity obtained within an ambient containing 40% nitrogen. Typical resistivities were between 50 and 300 ⁇ cm.
- first layer 11 aluminum was sputtered to form a second layer 12 containing 1% silicon.
- the thickness of this second layer was 2000 to 5000 ⁇ . These layers were photolithographically patterned. More specifically, the second layer of aluminum was etched with an etchant such as a mixture acid of phosphoric acid, acetic acid, and nitric acid. Subsequently, the first layer was etched with buffered hydrofluoric acid or nitrous acid while leaving behind the photoresist on the aluminum film. At this time, the interlayer insulator was deteriorated by overetching.
- an etchant such as a mixture acid of phosphoric acid, acetic acid, and nitric acid.
- the etching process might also be carried out by etching the first layer with a mixture of aqueous solution of hydrogen peroxide (H 2 O 2 ) and aqueous ammonia (NH 3 OH), using the aluminum layer selectively left first as a mask.
- the interlayer insulator was not affected.
- organic materials such as the photoresist were oxidized.
- the above-described etching step can be a dry etching process. If carbon tetrachloride (CCl 4 ) is used as an etching gas, the second and first layers can be continuously etched without adversely affecting the silicon oxide. In this way, conductive interconnects extending from the doped regions were formed. Then, the laminate was annealed at 300° C. within an ambient of hydrogen, thus completing TFTs.
- CCl 4 carbon tetrachloride
- FIG. 2(A) shows the manner in which conductive interconnects 19 for connection with the outside extend from an integrated circuit 18 toward substrate peripheral portions, the circuit 18 being formed on a substrate 17.
- This electronic circuit may sometimes make electrical contact by mechanical means such as contact fixtures (e.g., sockets) in regions 20 surrounded by the broken line.
- circuits 22-24 activate an active-matrix region 25 on a substrate 21.
- electrical contacts are made in regions 27 surrounded by the broken lines. Connections made by wire bonding function permanently and are highly reliable. However, considerable labor is needed to fabricate the connections. Especially, this method is not suited for connection of numerous terminals. Therefore, use of mechanical contacts may sometimes be more advantageous.
- the surfaces of the conductive interconnects at the contacts be sufficiently strong and that the underlying layer adhere well to the conductive interconnects.
- Aluminum is not suitable for these purposes.
- a material consisting mainly of titanium adheres well to silicon, silicon oxide, aluminum, and other similar materials.
- the hardness of the coating of this material is high. Hence, this material is adequate.
- nitrogen be not contained at all.
- a maximum amount of nitrogen up to its stoichiometric ratio can be contained.
- the first layer 11 only the contacts were etched to expose the second layer.
- those portions of the first layer which were in contact with the second layer were made of stoichiometric titanium nitride.
- Contact fixtures 13 were pressed against the exposed portions of the titanium nitride to form contacts (FIG. 1(C)).
- a second layer 15 is formed on a first layer 14.
- a third layer 16 of titanium nitride is formed on the second layer 15.
- Contact fixtures may be brought into contact with this third layer. In this case, it is not necessary to partially etch the second layer as shown in FIG. 1(C). Hence, the patterning step can be omitted.
- a layer consisting mainly of nitrogen and titanium according to the present invention is first photolithographically patterned into conductive interconnects, and then an ITO film is formed.
- the ITO film is made of a material consisting principally of nitrogen and titanium. Consequently, good contacts can be obtained.
- the material of the film is not restricted to ITO. Rather, various other conductive oxides may also be used.
- V D -I D characteristic of the TFTs obtained in this way is shown as curve a in FIG. 3.
- V D -I D characteristic of TFTs having conventional Al/Si contacts is shown as curve b in FIG. 3.
- such abnormality is not observed on the curve a of the TFTs manufactured according to the present invention, and normal MOS FET characteristics are exhibited.
- FIGS. 4(A) and 4(B) are photographs demonstrating that alloying (i.e., formation of a silicide) of the materials of the conductive interconnects extending from the TFTs, i.e., aluminum, with the N-type silicon in the source and drain regions is suppressed under the same conditions as in Example 1.
- the regions shown in the photographs of FIGS. 4(A) and 4(B) are schematically shown in FIGS. 5(A) and 5(B), respectively.
- a rectangular region seen at the center of each photograph is a contact hole.
- the laminate was annealed at 300° C. for 30 minutes. Where no titanium nitride existed between the silicon and the aluminum as shown in FIG. 4(A), a large amount of silicide (specks) was produced at the contacts. Where a film of titanium nitride having a thickness of 1000 ⁇ existed as shown in FIG. 4(B), any deterioration was not observed at all.
- Conventional steps are not described herein.
- silicon oxide was deposited as a silicon oxide base film 2 on a glass substrate 1.
- An amorphous silicon film 3 having a thickness of 100 to 1500 ⁇ , preferably 100 to 750 ⁇ , was formed on the silicon oxide film 2.
- a protective layer 4 was formed on the amorphous silicon film 3.
- the laminate was annealed at 450° to 600° C. for 12 to 48 hours to crystallize the amorphous silicon film.
- laser annealing or other similar means can also be used for the crystallization (FIG. 1(A)).
- the silicon film was photolithographically patterned into island-shaped semiconductor regions 5.
- a silicon oxide film 6 having a thickness of 500 to 1500 ⁇ , preferably 800 to 1000 ⁇ , was formed on the semiconductor regions 5 to form a gate oxide film.
- gate interconnects and electrodes 7 were fabricated from aluminum.
- the aluminum interconnects and electrodes 7 were anodized to form an aluminum oxide coating around the interconnects and electrodes 7.
- an impurity such as phosphorus was introduced by ion implantation or other method to form doped silicon regions 8 aligned with the gate electrodes 7.
- the dose, the accelerating voltage, and the thickness of the gate oxide film were so set that the dose was 0.8 to 4 ⁇ 10 15 /cm 2 and that the dopant density was 1 ⁇ 10 19 to 1 ⁇ 10 21 /cm 3 .
- the doped regions 8 were recrystallized by thermal annealing, laser annealing, or other method to form source and drain regions of TFTs (FIG. 1(B)).
- silicon oxide was deposited as an interlayer insulator 9, followed by deposition of ITO.
- the ITO film was photolitho-graphically patterned into pixel electrodes 10 of an active-matrix liquid crystal display.
- Contact holes were formed in the interlayer insulator 9 to expose parts of the doped regions, or the source and drain regions.
- a first layer consisting mainly of titanium and nitrogen was formed by sputtering.
- a second layer made of aluminum was formed by sputtering in the manner described below.
- a target made of titanium was placed in a sputter chamber. Films were formed within an ambient consisting of argon and nitrogen. The ratio of the partial pressure of the argon to the partial pressure of the nitrogen was less than 0.3, for example 0.25. The sputtering pressure was 3 mtorr. A DC current of 4.5 A was passed. The flow rate of the argon was 24 SCCM. The flow rate of the nitrogen was 6 SCCM. The first layer had a lower layer containing less nitrogen, the lower layer having a thickness of 100 ⁇ . The film formed in this way showed sufficiently small contact resistance with the silicon and ITO.
- the percentage of the ambient within the sputter chamber was increased such that the ratio of the partial pressure of the argon to the partial pressure of the nitrogen was in excess of 0.3, for example 1.
- a film was formed by sputtering.
- the sputtering pressure and the DC current were maintained at 3 mtorr and 4.5 A, respectively.
- the flow rates of the argon and the nitrogen were set to 15 SCCM.
- an upper layer (having a thickness of 900 ⁇ ) of the first layer was formed.
- the film formed in this manner showed a large contact resistance with the silicon and so could not be used as contacts. However, this film could be patterned into conductive interconnections without difficulty in the present example.
- the deposition rate by sputtering is affected greatly by the partial pressure of the nitrogen as well as by the sputtering pressure.
- the deposition rate was 100 to 120 ⁇ /min.
- the deposition rate was 30 to 40 ⁇ /min.
- the first layer 11 After forming the first layer 11 in this way, aluminum was sputtered to form a second layer 12 containing 1% silicon. The thickness of this second layer was 2000 to 5000 ⁇ . These layers were photolithographically patterned. More specifically, the second layer of aluminum was etched with an etchant such as a mixture acid of phosphoric acid, acetic acid, and nitric acid. Subsequently, the first layer was etched with a mixture liquid of aqueous solution of hydrogen peroxide (H 2 O 2 ) and aqueous ammonia (NH 3 OH) while leaving behind the photoresist on the aluminum film. Since this etchant oxidizes organic substances, it follows that a final cleaning of organic substances is simultaneously done.
- an etchant such as a mixture acid of phosphoric acid, acetic acid, and nitric acid.
- H 2 O 2 hydrogen peroxide
- NH 3 OH aqueous ammonia
- the laminate was annealed at 300° C. within an ambient of hydrogen, thus completing TFTs.
- the laminate was annealed at 300° C. within an ambient of hydrogen, thus completing TFTs.
- the contacts were etched, thus exposing the second layer.
- Contact fixtures 13 were pressed against the exposed portions of the first layer to form contacts (FIG. 1(C)).
- the present example is .shown in FIGS. 7, (A)-(H).
- silicon oxide was deposited as a silicon oxide film 202 on a glass substrate 201 made of Corning 7059.
- the silicon oxide film formed a base film and had a thickness of 1000 to 3000 ⁇ .
- the substrate measured 300 mm ⁇ 400 mm or 100 mm ⁇ 100 mm.
- sputtering was effected within oxygen ambient.
- TEOS may be decomposed and deposited by plasma CVD.
- amorphous silicon was deposited as a film having a thickness of 300 to 5000 ⁇ , preferably 500 to 1000 ⁇ , by plasma CVD or LPCVD. This film was allowed to stand within an oxidizing ambient at 550° to 800° C. for 24 hours to crystallize the film. This step may also be carried out by laser irradiation.
- the crystallized silicon film was photolithographically patterned into island-shaped regions 203.
- a silicon oxide film 104 having a thickness of 700 to 1500 ⁇ was formed by sputtering techniques.
- An aluminum film having a thickness of 1000 ⁇ to 3 ⁇ m was then formed by electron-beam evaporation or sputtering.
- This aluminum film contained 1% by weight of silicon or 0.1 to 0.3% by weight of scandium.
- the gate electrodes 205 were anodized by passing an electric current through an electrolytic solution to form an anodic oxide film 206 having a thickness of 3000 to 8000 ⁇ , for example 5000 ⁇ .
- the anodization step was carried out, using an acidic solution of 3 to 20% of citric acid, nitric acid, phosphoric acid, chromic acid, sulfuric acid, or other acid, and by applying a constant voltage of 10 to 30 V to the gate electrodes.
- a voltage of 10 V was applied to the gate electrodes in oxalic acid at 30° C. for 20 to 40 minutes for anodic oxidation.
- the thickness of the anodic oxide film was controlled by the anodization time (FIG. 7(B)).
- the silicon oxide film 104 was etched by dry etching techniques. In this etching step, either plasma mode of isotropic etching or reactive ion etching mode of anisotropic etching can be used. However, it is important that the active layer be etched not deeply by setting large the selection ratio of the silicon to the silicon oxide. For example, if CF 4 is used as an etching gas, the anodic oxide film is not etched; only the silicon oxide film 104 is etched. The silicon oxide film 204 located under the porous anodic oxide film 206 was not etched but left behind (FIG. 7(C)).
- the porous anodic oxide film 206 was etched away. Then, using the gate electrode portions 205 and 207 and the gate-insulating film 204 as masks, an impurity was implanted by ion doping to form low-resistivity doped regions 208, 211 and high-resistivity doped regions 209, 210. The dose was 1 to 5 ⁇ 10 14 /cm 2 . The accelerating voltage was 39 to 90 kV. Phosphorus was used as the impurity (FIG. 7(E)).
- An appropriate metal such as titanium, nickel, molybdenum, tungsten, platinum, or palladium was sputtered over the whole surface.
- a titanium film 212 having a thickness of 50 to 500 ⁇ was formed over the whole surface.
- the metal film, the titanium film 212 in this example was in intimate contact with the low-resistivity doped regions 208 and 211 (FIG. 7(F)).
- Laser radiation emitted from a KrF excimer laser having a wavelength of 248 nm and a pulse width of 20 nsec was illuminated to activate the implanted impurity and to cause the metal film, or the titanium film, to react with the active layer, thus forming regions 213 and 214 of a metal silicide, or titanium silicide.
- the energy density of the laser radiation was 200 to 400 mJ/cm 2 , preferably 250 to 300 mJ/cm 2 .
- an excimer laser was employed as described above.
- the used laser is a pulsed laser. If a CW laser is used, the illumination time is long and so the illuminated object expands due to heat. As a result, the object may peel off.
- Usable pulsed lasers include infrared lasers such as an Nd:YAG laser (preferably Q-switched laser), visible light lasers such as those utilizing second-harmonic generation, and various UV lasers using excimers such as KrF, XeCl, and ArF.
- Nd:YAG laser preferably Q-switched laser
- visible light lasers such as those utilizing second-harmonic generation
- various UV lasers using excimers such as KrF, XeCl, and ArF.
- the laser light may also be illuminated from the side of the substrate. In this case, such laser light which is transmitted through the underlying silicon semiconductor layer is required to be selected.
- the anneal can be a lamp anneal using illumination of visible light or near infrared light. Where a lamp anneal is conducted, light is illuminated in such a way that the surface of the illuminated object reaches about 800° to 1000° C. Where the temperature is 800° C., the illumination is continued for several minutes. Where the temperature is 1000° C., the illumination is carried out for tens of seconds.
- An anneal using infrared light such as infrared light of 1.2 ⁇ m is quite advantageous for the following reasons.
- the near infrared light is absorbed selectively by the silicon semiconductor layer and, therefore, the glass substrate is not heated very much. By setting each illumination time short, the substrate is heated to a less extent.
- the titanium film was etched by an etchant consisting of hydrogen peroxide, ammonia, and water at a rate of 5:2:2.
- the exposed layer and those portions of the titanium layer which were not contacted e.g., the titanium film existing on the gate-insulating film 204 and on the anodic oxide film 207) were left in metal state. These portions could be removed by this etching. Since none of the titanium nitride films 213 and 214 were etched, they could be left behind (FIG. 7(G)).
- a silicon oxide film having a thickness of 2000 ⁇ to 1 ⁇ m (e.g., 3000 ⁇ ) was formed as an interlayer insulator 217 over the whole surface by CVD.
- Contact holes were formed in the source and drain electrodes of the TFTs.
- Aluminum interconnects and electrodes 218 and 219 having thicknesses of 200 ⁇ to 1 ⁇ m (e.g., 5000 ⁇ ) were formed.
- the portions with which the aluminum interconnects were in contact were made of titanium silicide. The stability at the interface with the aluminum is improved over the case of silicon. Hence, reliable contacts were obtained.
- the reliability could be improved further.
- the sheet resistance of the silicide regions was 10 to 50 ⁇ /cm 2 .
- the sheet resistance of the high-resistivity regions 209 and 210 was 10 to 100 k ⁇ /cm 2 .
- TFTs which had good frequency characteristics and suffered from less hot carrier deterioration at high drain voltages could be fabricated.
- the low-resistivity doped region 211 could be made substantially coincident with the metal siliclde regions.
- FIG. 6 illustrates an example of fabrication of plural TFTs on a substrate, by the method illustrated in FIGS. 7, (A)-(H).
- three thin-film transistors TFT1-TFTS were formed.
- the TFT1 and TFT2 were used as driver TFTs and took the form of CMOS devices.
- these TFTs were built as inverters.
- Oxide layers 505 and 508 corresponding to the anodic oxide film 207 shown in FIGS. 7, (A)-(H) had a small thickness of 200 to 1000 ⁇ , for example 500 ⁇ . These oxide layers slightly overlapped the underlying layer.
- the TFT3 was used as a pixel TFT.
- An anodic oxide film 507 had a large value of 2000 ⁇ and took an offset state, thus suppressing leakage current.
- One of the source/drain electrodes of the TFT3 was connected with the pixel electrode 508 of ITO. In order that the anodic oxide films had different thicknesses, they were separated to permit the voltages applied to the gate electrodes of the TFTs to be controlled independently.
- the TFT1 and TFT3 were n-channel thin-film transistors, while the TFT2 was a p-channel thin-film transistor.
- the step for forming the titanium film was carried out after the ion doping step. This sequence may be reversed. In this case, since the titanium film coats the whole underlying layer when ions are illuminated, abnormal charging, or charge-up, which would be produced on the substrate, is effectively prevented.
- a laser annealing step is carried out. Then, a titanium film is formed, and a titanium silicide film is formed by laser illumination or thermal annealing.
- the contacts of the source or drain electrodes of the novel TFTs may take the structure shown in FIGS. 8(A)-8(C). Shown in these figures are a glass substrate 1, an insulating film 6, a source or drain 8, an interlayer insulating film 9, a titanium silicide region 301, a titanium nitride layer 302, an aluminum layer 303, a titanium nitride layer 304, a titanium layer 305, and a titanium nitride layer 306.
- thin source, drain, or other doped regions, of TFTs can have good contacts, which are highly reliable and hence effective in enhancing the reliability of the whole electronic circuit. In this way, the invention is industrially advantageous.
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JP02328993A JP3587537B2 (ja) | 1992-12-09 | 1993-01-18 | 半導体装置 |
JP5-23289 | 1993-01-18 | ||
US16235793A | 1993-12-07 | 1993-12-07 | |
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Family
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Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/483,049 Expired - Lifetime US5623157A (en) | 1992-12-09 | 1995-06-07 | Semiconductor device having a lead including aluminum |
US08/636,917 Expired - Lifetime US5804878A (en) | 1992-12-09 | 1996-04-24 | Electronic circuit |
US09/041,702 Expired - Lifetime US6031290A (en) | 1992-12-09 | 1998-03-13 | Electronic circuit |
US09/382,674 Expired - Lifetime US6166414A (en) | 1992-12-09 | 1999-08-25 | Electronic circuit |
US09/703,594 Expired - Fee Related US6448612B1 (en) | 1992-12-09 | 2000-11-02 | Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor |
US10/193,162 Expired - Fee Related US6608353B2 (en) | 1992-12-09 | 2002-07-12 | Thin film transistor having pixel electrode connected to a laminate structure |
US10/620,420 Expired - Fee Related US7045399B2 (en) | 1992-12-09 | 2003-07-17 | Electronic circuit |
US10/641,008 Expired - Fee Related US7061016B2 (en) | 1992-12-09 | 2003-08-15 | Electronic circuit |
US11/022,882 Expired - Fee Related US7105898B2 (en) | 1992-12-09 | 2004-12-28 | Electronic circuit |
US11/447,955 Expired - Fee Related US7547916B2 (en) | 1992-12-09 | 2006-06-07 | Electronic circuit |
US12/476,445 Expired - Fee Related US7897972B2 (en) | 1992-12-09 | 2009-06-02 | Electronic circuit |
US13/027,502 Expired - Fee Related US8294152B2 (en) | 1992-12-09 | 2011-02-15 | Electronic circuit including pixel electrode comprising conductive film |
Family Applications After (11)
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US08/636,917 Expired - Lifetime US5804878A (en) | 1992-12-09 | 1996-04-24 | Electronic circuit |
US09/041,702 Expired - Lifetime US6031290A (en) | 1992-12-09 | 1998-03-13 | Electronic circuit |
US09/382,674 Expired - Lifetime US6166414A (en) | 1992-12-09 | 1999-08-25 | Electronic circuit |
US09/703,594 Expired - Fee Related US6448612B1 (en) | 1992-12-09 | 2000-11-02 | Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor |
US10/193,162 Expired - Fee Related US6608353B2 (en) | 1992-12-09 | 2002-07-12 | Thin film transistor having pixel electrode connected to a laminate structure |
US10/620,420 Expired - Fee Related US7045399B2 (en) | 1992-12-09 | 2003-07-17 | Electronic circuit |
US10/641,008 Expired - Fee Related US7061016B2 (en) | 1992-12-09 | 2003-08-15 | Electronic circuit |
US11/022,882 Expired - Fee Related US7105898B2 (en) | 1992-12-09 | 2004-12-28 | Electronic circuit |
US11/447,955 Expired - Fee Related US7547916B2 (en) | 1992-12-09 | 2006-06-07 | Electronic circuit |
US12/476,445 Expired - Fee Related US7897972B2 (en) | 1992-12-09 | 2009-06-02 | Electronic circuit |
US13/027,502 Expired - Fee Related US8294152B2 (en) | 1992-12-09 | 2011-02-15 | Electronic circuit including pixel electrode comprising conductive film |
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JP (1) | JP3587537B2 (zh) |
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CN (8) | CN1302560C (zh) |
TW (1) | TW359891B (zh) |
Cited By (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780908A (en) * | 1995-05-09 | 1998-07-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor apparatus with tungstein nitride |
US5990493A (en) * | 1998-05-14 | 1999-11-23 | Advanced Micro Devices, Inc. | Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium |
US6031290A (en) * | 1992-12-09 | 2000-02-29 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6204099B1 (en) * | 1995-02-21 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6392810B1 (en) | 1998-10-05 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device |
US20020123179A1 (en) * | 1993-01-18 | 2002-09-05 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
US6451644B1 (en) * | 1998-11-06 | 2002-09-17 | Advanced Micro Devices, Inc. | Method of providing a gate conductor with high dopant activation |
US20020190321A1 (en) * | 1998-12-18 | 2002-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6534826B2 (en) | 1999-04-30 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20030189210A1 (en) * | 2002-04-09 | 2003-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US20040046174A1 (en) * | 1996-06-04 | 2004-03-11 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Semiconductor integrated circuit and fabrication method thereof |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6777763B1 (en) | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US6853083B1 (en) | 1995-03-24 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transfer, organic electroluminescence display device and manufacturing method of the same |
US20050040476A1 (en) * | 1993-10-01 | 2005-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and a method for manufacturing the same |
US6867431B2 (en) | 1993-09-20 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20050067617A1 (en) * | 1999-07-06 | 2005-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6885366B1 (en) | 1999-09-30 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US20050104068A1 (en) * | 1998-11-17 | 2005-05-19 | Shunpei Yamazaki | Method of fabricating a semiconductor device |
US20050159940A1 (en) * | 1999-05-27 | 2005-07-21 | America Online, Inc., A Delaware Corporation | Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec |
US6936844B1 (en) * | 1999-03-26 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a gate wiring comprising laminated wirings |
US6972746B1 (en) | 1994-10-31 | 2005-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type flat-panel display device |
US20050282305A1 (en) * | 2002-04-09 | 2005-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US20060014337A1 (en) * | 1993-08-27 | 2006-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20060038176A1 (en) * | 2004-08-20 | 2006-02-23 | Kengo Akimoto | Semiconductor device and manufacturing method thereof |
US20060043510A1 (en) * | 2004-07-30 | 2006-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US20060081931A1 (en) * | 1998-11-09 | 2006-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US20060095001A1 (en) * | 2004-10-29 | 2006-05-04 | Transcutaneous Technologies Inc. | Electrode and iontophoresis device |
US20060091387A1 (en) * | 1998-11-25 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100590737B1 (ko) * | 1998-03-28 | 2006-06-19 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 박막 트랜지스터를 포함한 전자 장치 |
US20060249733A1 (en) * | 1999-04-12 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US20070015307A1 (en) * | 2004-12-27 | 2007-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20070060860A1 (en) * | 2005-08-18 | 2007-03-15 | Transcutaneous Technologies Inc. | Iontophoresis device |
US20070060859A1 (en) * | 2005-08-08 | 2007-03-15 | Transcutaneous Technologies Inc. | Iontophoresis device |
US20070066932A1 (en) * | 2005-09-15 | 2007-03-22 | Transcutaneous Technologies Inc. | Iontophoresis device |
US20070066930A1 (en) * | 2005-06-20 | 2007-03-22 | Transcutaneous Technologies, Inc. | Iontophoresis device and method of producing the same |
US20070078445A1 (en) * | 2005-09-30 | 2007-04-05 | Curt Malloy | Synchronization apparatus and method for iontophoresis device to deliver active agents to biological interfaces |
US20070093787A1 (en) * | 2005-09-30 | 2007-04-26 | Transcutaneous Technologies Inc. | Iontophoresis device to deliver multiple active agents to biological interfaces |
US20070197955A1 (en) * | 2005-10-12 | 2007-08-23 | Transcutaneous Technologies Inc. | Mucous membrane adhesion-type iontophoresis device |
US20070200139A1 (en) * | 2001-06-01 | 2007-08-30 | Hiroshi Shibata | Semiconductor device, manufacturing method thereof, and display device |
US20070210451A1 (en) * | 1996-10-31 | 2007-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US20070232983A1 (en) * | 2005-09-30 | 2007-10-04 | Smith Gregory A | Handheld apparatus to deliver active agents to biological interfaces |
US20070236640A1 (en) * | 2006-04-06 | 2007-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US20080033398A1 (en) * | 2005-12-29 | 2008-02-07 | Transcutaneous Technologies Inc. | Device and method for enhancing immune response by electrical stimulation |
US20080033338A1 (en) * | 2005-12-28 | 2008-02-07 | Smith Gregory A | Electroosmotic pump apparatus and method to deliver active agents to biological interfaces |
US20080114282A1 (en) * | 2006-09-05 | 2008-05-15 | Transcu Ltd. | Transdermal drug delivery systems, devices, and methods using inductive power supplies |
US20080136989A1 (en) * | 2004-09-15 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device |
US20080154178A1 (en) * | 2006-12-01 | 2008-06-26 | Transcutaneous Technologies Inc. | Systems, devices, and methods for powering and/or controlling devices, for instance transdermal delivery devices |
US20090005721A1 (en) * | 2005-12-09 | 2009-01-01 | Tti Ellebeau, Inc. | Packaged iontophoresis system |
US20090020762A1 (en) * | 2002-04-15 | 2009-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
US20090187134A1 (en) * | 2005-09-30 | 2009-07-23 | Hidero Akiyama | Iontophoresis Device Controlling Amounts of a Sleep-Inducing Agent and a Stimulant to be Administered and Time at Which the Drugs are Administered |
US20090216175A1 (en) * | 2005-08-05 | 2009-08-27 | Transcu Ltd. | Transdermal Administration Device and Method of Controlling the Same |
US20090216177A1 (en) * | 2005-09-16 | 2009-08-27 | Tti Ellebeau,Inc | Catheter-type iontophoresis device |
US20090299265A1 (en) * | 2005-09-30 | 2009-12-03 | Tti Ellebeau, Inc. | Electrode Assembly for Iontophoresis Having Shape-Memory Separator and Iontophoresis Device Using the Same |
US20100016781A1 (en) * | 2005-08-29 | 2010-01-21 | Mizuo Nakayama | Iontophoresis device selecting drug to be administered on the basis of information form sensor |
US20100030128A1 (en) * | 2005-09-06 | 2010-02-04 | Kazuma Mitsuguchi | Iontophoresis device |
US7687809B2 (en) | 1995-01-17 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
US20100102311A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US20100312168A1 (en) * | 2009-06-09 | 2010-12-09 | Yoshimasa Yoshida | Long life high capacity electrode, device, and method of manufacture |
US20110024758A1 (en) * | 2006-05-16 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US20110037917A1 (en) * | 2006-06-02 | 2011-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US7964874B2 (en) | 2002-04-15 | 2011-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a protective circuit |
US8120031B2 (en) | 2002-05-17 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film |
US8471256B2 (en) | 2009-11-27 | 2013-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2013131821A1 (en) * | 2012-03-05 | 2013-09-12 | Abb Technology Ag | Power semiconductor device and method for manufacturing thereof |
US8860899B2 (en) | 1997-01-17 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal display device |
US8946011B2 (en) | 2010-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643801A (en) | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US6410374B1 (en) | 1992-12-26 | 2002-06-25 | Semiconductor Energy Laborartory Co., Ltd. | Method of crystallizing a semiconductor layer in a MIS transistor |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6133620A (en) * | 1995-05-26 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
US6906383B1 (en) | 1994-07-14 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacture thereof |
US5712191A (en) * | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
JPH09191111A (ja) * | 1995-11-07 | 1997-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US5985740A (en) * | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US6266110B1 (en) * | 1996-07-30 | 2001-07-24 | Kawasaki Steel Corporation | Semiconductor device reeventing light from entering its substrate transistor and the same for driving reflection type liquid crystal |
JP3641342B2 (ja) | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
TW531684B (en) * | 1997-03-31 | 2003-05-11 | Seiko Epson Corporatoin | Display device and method for manufacturing the same |
US6617648B1 (en) * | 1998-02-25 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Projection TV |
US6271590B1 (en) * | 1998-08-21 | 2001-08-07 | Micron Technology, Inc. | Graded layer for use in semiconductor circuits and method for making same |
JP3403949B2 (ja) | 1998-09-03 | 2003-05-06 | シャープ株式会社 | 薄膜トランジスタ及び液晶表示装置、ならびに薄膜トランジスタの製造方法 |
US7141821B1 (en) * | 1998-11-10 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture |
US6512271B1 (en) * | 1998-11-16 | 2003-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6420758B1 (en) * | 1998-11-17 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity region overlapping a gate electrode |
US6277679B1 (en) | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
EP1006589B1 (en) | 1998-12-03 | 2012-04-11 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
US6576924B1 (en) * | 1999-02-12 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate |
JP3362008B2 (ja) * | 1999-02-23 | 2003-01-07 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
US6576926B1 (en) | 1999-02-23 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US7821065B2 (en) | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
US6677613B1 (en) * | 1999-03-03 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100654927B1 (ko) | 1999-03-04 | 2006-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작방법 |
US6531713B1 (en) * | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
US6858898B1 (en) | 1999-03-23 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6281552B1 (en) | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
US6346730B1 (en) | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
TW518650B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
US6362507B1 (en) * | 1999-04-20 | 2002-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate |
US6461899B1 (en) | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
CN100485943C (zh) * | 1999-06-02 | 2009-05-06 | 株式会社半导体能源研究所 | 半导体器件 |
TW480554B (en) | 1999-07-22 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW490713B (en) | 1999-07-22 | 2002-06-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
JP3538084B2 (ja) * | 1999-09-17 | 2004-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6876145B1 (en) | 1999-09-30 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent display device |
JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6646287B1 (en) | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
JP2001175198A (ja) * | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TW503439B (en) * | 2000-01-21 | 2002-09-21 | United Microelectronics Corp | Combination structure of passive element and logic circuit on silicon on insulator wafer |
US6639265B2 (en) | 2000-01-26 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
US6646692B2 (en) | 2000-01-26 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid-crystal display device and method of fabricating the same |
US6825488B2 (en) | 2000-01-26 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
TW521303B (en) * | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
TW507258B (en) | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
TW495854B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US6830993B1 (en) | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
TW513753B (en) * | 2000-03-27 | 2002-12-11 | Semiconductor Energy Lab | Semiconductor display device and manufacturing method thereof |
DE20006642U1 (de) | 2000-04-11 | 2000-08-17 | Agilent Technologies Inc | Optische Vorrichtung |
US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
US7525165B2 (en) * | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6706544B2 (en) * | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
US7579203B2 (en) | 2000-04-25 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6580475B2 (en) | 2000-04-27 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6747289B2 (en) | 2000-04-27 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
US7633471B2 (en) * | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
TW480576B (en) * | 2000-05-12 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing same |
TWI286338B (en) * | 2000-05-12 | 2007-09-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US7804552B2 (en) * | 2000-05-12 | 2010-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same |
TW501282B (en) | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
US6613620B2 (en) * | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2002057339A (ja) * | 2000-08-10 | 2002-02-22 | Sony Corp | 薄膜半導体装置 |
US6562671B2 (en) * | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
US6509616B2 (en) | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
CA2389607A1 (en) | 2000-10-10 | 2002-04-18 | The Trustees Of Columbia University | Method and apparatus for processing thin metal layers |
JP5046452B2 (ja) * | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2002151698A (ja) | 2000-11-14 | 2002-05-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW525216B (en) * | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
SG103846A1 (en) * | 2001-02-28 | 2004-05-26 | Semiconductor Energy Lab | A method of manufacturing a semiconductor device |
SG179310A1 (en) | 2001-02-28 | 2012-04-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
SG116443A1 (en) * | 2001-03-27 | 2005-11-28 | Semiconductor Energy Lab | Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same. |
JP4926329B2 (ja) * | 2001-03-27 | 2012-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、電気器具 |
KR100437475B1 (ko) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
KR100415617B1 (ko) * | 2001-12-06 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법 |
JP2003253482A (ja) * | 2002-03-01 | 2003-09-10 | Ngk Insulators Ltd | チタン系膜及びチタン酸化物の除去方法 |
US7242021B2 (en) * | 2002-04-23 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display element using semiconductor device |
US7579771B2 (en) * | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
TWI272556B (en) | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
TWI263339B (en) | 2002-05-15 | 2006-10-01 | Semiconductor Energy Lab | Light emitting device and method for manufacturing the same |
JP2003330388A (ja) * | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP4216008B2 (ja) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末 |
WO2004017380A2 (en) | 2002-08-19 | 2004-02-26 | The Trustees Of Columbia University In The City Of New York | A single-shot semiconductor processing system and method having various irradiation patterns |
JP4873858B2 (ja) | 2002-08-19 | 2012-02-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造 |
JP4615197B2 (ja) * | 2002-08-30 | 2011-01-19 | シャープ株式会社 | Tftアレイ基板の製造方法および液晶表示装置の製造方法 |
US7094684B2 (en) * | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
TWI338366B (en) * | 2002-09-20 | 2011-03-01 | Semiconductor Energy Lab | Display device and manufacturing method thereof |
JP4373086B2 (ja) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
WO2004075263A2 (en) | 2003-02-19 | 2004-09-02 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
KR100470155B1 (ko) * | 2003-03-07 | 2005-02-04 | 광주과학기술원 | 아연산화물 반도체 제조방법 |
JP4038485B2 (ja) * | 2003-03-12 | 2008-01-23 | 三星エスディアイ株式会社 | 薄膜トランジスタを備えた平板表示素子 |
KR100669688B1 (ko) * | 2003-03-12 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
KR100514181B1 (ko) * | 2003-09-03 | 2005-09-13 | 삼성에스디아이 주식회사 | 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법 |
US7364952B2 (en) | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
WO2005029549A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for facilitating bi-directional growth |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
WO2005029547A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
KR100543005B1 (ko) | 2003-09-18 | 2006-01-20 | 삼성에스디아이 주식회사 | 능동 매트릭스 유기전계발광표시장치 |
US7311778B2 (en) | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
KR100623247B1 (ko) * | 2003-12-22 | 2006-09-18 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR100626008B1 (ko) * | 2004-06-30 | 2006-09-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 및 이를 구비한 평판표시장치 |
JP4974500B2 (ja) * | 2004-09-15 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール及び電子機器 |
JP4485303B2 (ja) * | 2004-09-17 | 2010-06-23 | 株式会社半導体エネルギー研究所 | 透過型表示装置の作製方法 |
US20060091397A1 (en) * | 2004-11-04 | 2006-05-04 | Kengo Akimoto | Display device and method for manufacturing the same |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
KR20060064264A (ko) * | 2004-12-08 | 2006-06-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US7659580B2 (en) * | 2005-12-02 | 2010-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2007067541A2 (en) | 2005-12-05 | 2007-06-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing a film, and thin films |
KR101229413B1 (ko) | 2006-04-18 | 2013-02-04 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법 |
JP2006261705A (ja) * | 2006-06-23 | 2006-09-28 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
JP2008147516A (ja) * | 2006-12-12 | 2008-06-26 | Mitsubishi Electric Corp | 薄膜トランジスタ及びその製造方法 |
WO2008099697A1 (ja) * | 2007-02-13 | 2008-08-21 | Mitsubishi Electric Corporation | 表示装置およびその製造方法 |
US20080191211A1 (en) * | 2007-02-13 | 2008-08-14 | Mitsubishi Electric Corporation | Thin film transistor array substrate, method of manufacturing the same, and display device |
KR100858818B1 (ko) * | 2007-03-20 | 2008-09-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
CN101687708B (zh) * | 2007-07-13 | 2013-01-02 | Jx日矿日石金属株式会社 | 复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法 |
KR20090020847A (ko) * | 2007-08-24 | 2009-02-27 | 삼성전자주식회사 | 스트레인드 채널을 갖는 모스 트랜지스터의 제조 방법 및그에 의해 제조된 모스 트랜지스터 |
KR20100074193A (ko) | 2007-09-21 | 2010-07-01 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막 트랜지스터에서 사용되는 측면 결정화된 반도체 섬의 집합 |
JP5385289B2 (ja) | 2007-09-25 | 2014-01-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 |
JP5443377B2 (ja) | 2007-11-21 | 2014-03-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | エピタキシャルに配向された厚膜を調製するための調製システムおよび方法 |
US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009111340A2 (en) | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP2351067A4 (en) | 2008-11-14 | 2013-07-03 | Univ Columbia | SYSTEMS AND METHODS FOR CRYSTALLIZATION OF THIN FILMS |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
FR2977367A1 (fr) * | 2011-06-30 | 2013-01-04 | St Microelectronics Crolles 2 | Transistors dont la grille comprend une couche de nitrure de titane et procede de depot de cette couche |
CN104600123B (zh) * | 2015-01-05 | 2018-06-26 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板及显示装置 |
US10559520B2 (en) * | 2017-09-29 | 2020-02-11 | Qualcomm Incorporated | Bulk layer transfer processing with backside silicidation |
KR102560100B1 (ko) * | 2018-03-08 | 2023-07-26 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
US5198379A (en) * | 1990-04-27 | 1993-03-30 | Sharp Kabushiki Kaisha | Method of making a MOS thin film transistor with self-aligned asymmetrical structure |
US5202575A (en) * | 1990-05-18 | 1993-04-13 | Fuji Xerox Co., Ltd. | TFT-driven image sensor including a reduced-size capacitor structure |
US5306651A (en) * | 1990-05-11 | 1994-04-26 | Asahi Glass Company Ltd. | Process for preparing a polycrystalline semiconductor thin film transistor |
US5316960A (en) * | 1989-07-11 | 1994-05-31 | Ricoh Company, Ltd. | C-MOS thin film transistor device manufacturing method |
US5365112A (en) * | 1991-10-14 | 1994-11-15 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having an improved bonding pad structure |
US5365104A (en) * | 1993-03-25 | 1994-11-15 | Paradigm Technology, Inc. | Oxynitride fuse protective/passivation film for integrated circuit having resistors |
US5371042A (en) * | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
US5380678A (en) * | 1991-03-12 | 1995-01-10 | Yu; Chang | Bilayer barrier metal method for obtaining 100% step-coverage in contact vias without junction degradation |
US5397744A (en) * | 1991-02-19 | 1995-03-14 | Sony Corporation | Aluminum metallization method |
US5434044A (en) * | 1991-07-24 | 1995-07-18 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5459353A (en) * | 1991-02-12 | 1995-10-17 | Matsushita Electronics Corporation | Semiconductor device including interlayer dielectric film layers and conductive film layers |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
Family Cites Families (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4193080A (en) * | 1975-02-20 | 1980-03-11 | Matsushita Electronics Corporation | Non-volatile memory device |
JPS54137286A (en) * | 1978-04-17 | 1979-10-24 | Nec Corp | Semiconductor device |
JPS5846174B2 (ja) * | 1981-03-03 | 1983-10-14 | 株式会社東芝 | 半導体集積回路 |
JPS6016462A (ja) | 1983-07-08 | 1985-01-28 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH0824184B2 (ja) * | 1984-11-15 | 1996-03-06 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
JPS61183971A (ja) | 1985-02-08 | 1986-08-16 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
JPS62109364A (ja) * | 1985-11-07 | 1987-05-20 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS62124530A (ja) | 1985-11-25 | 1987-06-05 | Sharp Corp | 液晶表示素子 |
JPS62259469A (ja) | 1986-05-06 | 1987-11-11 | Hitachi Ltd | 半導体装置 |
JPH0830822B2 (ja) | 1986-05-26 | 1996-03-27 | カシオ計算機株式会社 | アクテイブマトリクス液晶表示装置の製造方法 |
JPS62286271A (ja) | 1986-06-05 | 1987-12-12 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ基板の製造方法 |
JP2718023B2 (ja) | 1986-09-17 | 1998-02-25 | 松下電器産業株式会社 | 透明導電膜の形成方法 |
US4907040A (en) * | 1986-09-17 | 1990-03-06 | Konishiroku Photo Industry Co., Ltd. | Thin film Schottky barrier device |
JPS6374033A (ja) | 1986-09-18 | 1988-04-04 | Canon Inc | パタ−ン形成方法 |
JPS63185066A (ja) | 1987-01-28 | 1988-07-30 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ− |
JP2644743B2 (ja) | 1987-01-28 | 1997-08-25 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
US4783248A (en) * | 1987-02-10 | 1988-11-08 | Siemens Aktiengesellschaft | Method for the production of a titanium/titanium nitride double layer |
NL8801164A (nl) * | 1987-06-10 | 1989-01-02 | Philips Nv | Weergeefinrichting voor gebruik in reflectie. |
US4842705A (en) | 1987-06-04 | 1989-06-27 | Siemens Aktiengesellschaft | Method for manufacturing transparent conductive indium-tin oxide layers |
US4928156A (en) * | 1987-07-13 | 1990-05-22 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
JPH01113731A (ja) | 1987-10-27 | 1989-05-02 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
JPH01122168A (ja) | 1987-11-05 | 1989-05-15 | Mitsubishi Electric Corp | 半導体装置 |
JP2596949B2 (ja) | 1987-11-06 | 1997-04-02 | シャープ株式会社 | 液晶表示装置の製造方法 |
JP2682997B2 (ja) | 1987-11-14 | 1997-11-26 | 株式会社日立製作所 | 補助容量付液晶表示装置及び補助容量付液晶表示装置の製造方法 |
JPH01187983A (ja) | 1988-01-22 | 1989-07-27 | Fujitsu Ltd | フォトダイオードの製造方法 |
US4928196A (en) * | 1988-04-04 | 1990-05-22 | Eastman Kodak Company | Magnetic recording device using circumferentially offset heads with double sided media |
JPH01259320A (ja) | 1988-04-11 | 1989-10-17 | Toppan Printing Co Ltd | 表示装置用電極板又は電極板ブランクの製造方法 |
US5493129A (en) * | 1988-06-29 | 1996-02-20 | Hitachi, Ltd. | Thin film transistor structure having increased on-current |
JPH0212873A (ja) | 1988-06-30 | 1990-01-17 | Nec Corp | 半導体装置 |
JPH0666287B2 (ja) * | 1988-07-25 | 1994-08-24 | 富士通株式会社 | 半導体装置の製造方法 |
DE68923756T2 (de) | 1988-10-28 | 1996-03-07 | Texas Instruments Inc., Dallas, Tex. | Abgedeckte Wärmebehandlung. |
JPH02132833A (ja) | 1988-11-11 | 1990-05-22 | Matsushita Electric Ind Co Ltd | 薄膜配線 |
US5187604A (en) * | 1989-01-18 | 1993-02-16 | Hitachi, Ltd. | Multi-layer external terminals of liquid crystal displays with thin-film transistors |
US5157470A (en) * | 1989-02-27 | 1992-10-20 | Hitachi, Ltd. | Thin film transistor, manufacturing method thereof and matrix circuit board and image display device each using the same |
NL8900521A (nl) * | 1989-03-03 | 1990-10-01 | Philips Nv | Schakeleenheid ten behoeve van een weergeefinrichting en weergeefinrichting voorzien van een dergelijke schakeleenheid. |
JPH02254729A (ja) * | 1989-03-28 | 1990-10-15 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH02260640A (ja) | 1989-03-31 | 1990-10-23 | Seiko Instr Inc | 半導体装置の製造方法 |
JPH02271632A (ja) | 1989-04-13 | 1990-11-06 | Seiko Epson Corp | 半導体装置 |
US5264077A (en) | 1989-06-15 | 1993-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a conductive oxide pattern |
JPH0834313B2 (ja) * | 1989-10-09 | 1996-03-29 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH03135018A (ja) * | 1989-10-20 | 1991-06-10 | Hitachi Ltd | 半導体装置の製造方法およびその装置 |
US5498573A (en) | 1989-11-29 | 1996-03-12 | General Electric Company | Method of making multi-layer address lines for amorphous silicon liquid crystal display devices |
JPH0693514B2 (ja) | 1990-01-18 | 1994-11-16 | 工業技術院長 | 透明導電酸化膜を含むcis構造の処理方法 |
US5288666A (en) * | 1990-03-21 | 1994-02-22 | Ncr Corporation | Process for forming self-aligned titanium silicide by heating in an oxygen rich environment |
JPH0411227A (ja) | 1990-04-27 | 1992-01-16 | Ricoh Co Ltd | 薄膜二端子素子 |
DE69125886T2 (de) | 1990-05-29 | 1997-11-20 | Semiconductor Energy Lab | Dünnfilmtransistoren |
JP2700277B2 (ja) | 1990-06-01 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JPH0448780A (ja) | 1990-06-15 | 1992-02-18 | Fuji Xerox Co Ltd | 配線構造及びイメージセンサ |
JPH0451517A (ja) | 1990-06-19 | 1992-02-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0465168A (ja) | 1990-07-05 | 1992-03-02 | Hitachi Ltd | 薄膜トランジスタ |
CN2073169U (zh) * | 1990-07-30 | 1991-03-13 | 北京市半导体器件研究所 | 功率mos器件的栅保护器 |
JPH0492430A (ja) | 1990-08-08 | 1992-03-25 | Seiko Epson Corp | 半導体装置 |
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
JPH03108767A (ja) | 1990-08-09 | 1991-05-08 | Sanyo Electric Co Ltd | 表示装置 |
JPH0499326A (ja) | 1990-08-18 | 1992-03-31 | Seiko Epson Corp | 半導体装置 |
JPH04100232A (ja) | 1990-08-20 | 1992-04-02 | Seiko Epson Corp | 半導体装置 |
JPH04111227A (ja) * | 1990-08-31 | 1992-04-13 | Hoya Corp | 光学的情報再生装置 |
JP3109091B2 (ja) | 1990-08-31 | 2000-11-13 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH04113324A (ja) | 1990-08-31 | 1992-04-14 | Ricoh Co Ltd | 液晶表示装置 |
US5153142A (en) * | 1990-09-04 | 1992-10-06 | Industrial Technology Research Institute | Method for fabricating an indium tin oxide electrode for a thin film transistor |
JPH04116821A (ja) | 1990-09-06 | 1992-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
DE69102851T2 (de) * | 1990-10-09 | 1995-02-16 | Nippon Electric Co | Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses. |
US5221632A (en) * | 1990-10-31 | 1993-06-22 | Matsushita Electric Industrial Co., Ltd. | Method of proudcing a MIS transistor |
KR950001360B1 (ko) | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
KR960010723B1 (ko) | 1990-12-20 | 1996-08-07 | 가부시끼가이샤 한도오따이 에네루기 겐큐쇼 | 전기광학장치 |
JPH04253342A (ja) | 1991-01-29 | 1992-09-09 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ基板 |
US5246872A (en) * | 1991-01-30 | 1993-09-21 | National Semiconductor Corporation | Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
US5521107A (en) | 1991-02-16 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a field-effect transistor including anodic oxidation of the gate |
JPH05267666A (ja) | 1991-08-23 | 1993-10-15 | Semiconductor Energy Lab Co Ltd | 半導体装置とその作製方法 |
JP3252397B2 (ja) | 1991-02-21 | 2002-02-04 | ソニー株式会社 | 配線形成方法 |
US5468987A (en) | 1991-03-06 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP3071851B2 (ja) * | 1991-03-25 | 2000-07-31 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
JPH04301623A (ja) | 1991-03-29 | 1992-10-26 | Sharp Corp | 薄膜トランジスタの製造方法 |
US5414278A (en) | 1991-07-04 | 1995-05-09 | Mitsushibi Denki Kabushiki Kaisha | Active matrix liquid crystal display device |
JPH0521796A (ja) | 1991-07-10 | 1993-01-29 | Seiko Epson Corp | 薄膜トランジスタ |
KR960008503B1 (en) | 1991-10-04 | 1996-06-26 | Semiconductor Energy Lab Kk | Manufacturing method of semiconductor device |
JPH06104196A (ja) | 1991-10-04 | 1994-04-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JPH05102055A (ja) | 1991-10-08 | 1993-04-23 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
JP2650543B2 (ja) * | 1991-11-25 | 1997-09-03 | カシオ計算機株式会社 | マトリクス回路駆動装置 |
EP0554060A3 (en) | 1992-01-31 | 1993-12-01 | Canon Kk | Liquid crystal display apparatus |
JP3101779B2 (ja) | 1992-01-31 | 2000-10-23 | キヤノン株式会社 | 液晶表示装置 |
JP3491904B2 (ja) | 1992-02-21 | 2004-02-03 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
US5198376A (en) * | 1992-07-07 | 1993-03-30 | International Business Machines Corporation | Method of forming high performance lateral PNP transistor with buried base contact |
US5808315A (en) | 1992-07-21 | 1998-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having transparent conductive film |
JP3202362B2 (ja) | 1992-07-21 | 2001-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN1244891C (zh) * | 1992-08-27 | 2006-03-08 | 株式会社半导体能源研究所 | 有源矩阵显示器 |
DE4228711A1 (de) * | 1992-08-28 | 1994-03-03 | Degussa | Silicium-Aluminium-Mischoxid |
EP0589478B1 (en) * | 1992-09-25 | 1999-11-17 | Sony Corporation | Liquid crystal display device |
JP3587537B2 (ja) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US5567966A (en) * | 1993-09-29 | 1996-10-22 | Texas Instruments Incorporated | Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain |
JP3030368B2 (ja) | 1993-10-01 | 2000-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6777763B1 (en) * | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
JP3135018B2 (ja) | 1993-12-24 | 2001-02-13 | 防衛庁技術研究本部長 | 銃の照準装置 |
US5727391A (en) * | 1995-10-16 | 1998-03-17 | Mcgill University | Deformable structural arrangement |
-
1993
- 1993-01-18 JP JP02328993A patent/JP3587537B2/ja not_active Expired - Fee Related
- 1993-12-06 TW TW082110288A patent/TW359891B/zh not_active IP Right Cessation
- 1993-12-09 CN CNB991071298A patent/CN1302560C/zh not_active Expired - Lifetime
- 1993-12-09 CN CN200410097474.9A patent/CN1607875B/zh not_active Expired - Lifetime
- 1993-12-09 CN CN93121131A patent/CN1111902C/zh not_active Expired - Lifetime
- 1993-12-09 CN CN03104196.5A patent/CN1282252C/zh not_active Expired - Lifetime
- 1993-12-09 CN CNB031041957A patent/CN1293641C/zh not_active Expired - Lifetime
- 1993-12-09 CN CN200510065164.3A patent/CN1664683B/zh not_active Expired - Lifetime
- 1993-12-09 KR KR1019930027128A patent/KR0131057B1/ko not_active IP Right Cessation
-
1995
- 1995-06-07 US US08/483,049 patent/US5623157A/en not_active Expired - Lifetime
-
1996
- 1996-04-24 US US08/636,917 patent/US5804878A/en not_active Expired - Lifetime
-
1998
- 1998-03-13 US US09/041,702 patent/US6031290A/en not_active Expired - Lifetime
-
1999
- 1999-08-25 US US09/382,674 patent/US6166414A/en not_active Expired - Lifetime
-
2000
- 2000-03-11 CN CN00104111.8A patent/CN1282980A/zh active Granted
- 2000-11-02 US US09/703,594 patent/US6448612B1/en not_active Expired - Fee Related
-
2002
- 2002-07-12 US US10/193,162 patent/US6608353B2/en not_active Expired - Fee Related
-
2003
- 2003-02-11 CN CN03104197.3A patent/CN1249506C/zh not_active Expired - Lifetime
- 2003-07-17 US US10/620,420 patent/US7045399B2/en not_active Expired - Fee Related
- 2003-08-15 US US10/641,008 patent/US7061016B2/en not_active Expired - Fee Related
-
2004
- 2004-12-28 US US11/022,882 patent/US7105898B2/en not_active Expired - Fee Related
-
2006
- 2006-06-07 US US11/447,955 patent/US7547916B2/en not_active Expired - Fee Related
-
2009
- 2009-06-02 US US12/476,445 patent/US7897972B2/en not_active Expired - Fee Related
-
2011
- 2011-02-15 US US13/027,502 patent/US8294152B2/en not_active Expired - Fee Related
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316960A (en) * | 1989-07-11 | 1994-05-31 | Ricoh Company, Ltd. | C-MOS thin film transistor device manufacturing method |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US5198379A (en) * | 1990-04-27 | 1993-03-30 | Sharp Kabushiki Kaisha | Method of making a MOS thin film transistor with self-aligned asymmetrical structure |
US5306651A (en) * | 1990-05-11 | 1994-04-26 | Asahi Glass Company Ltd. | Process for preparing a polycrystalline semiconductor thin film transistor |
US5202575A (en) * | 1990-05-18 | 1993-04-13 | Fuji Xerox Co., Ltd. | TFT-driven image sensor including a reduced-size capacitor structure |
US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
US5459353A (en) * | 1991-02-12 | 1995-10-17 | Matsushita Electronics Corporation | Semiconductor device including interlayer dielectric film layers and conductive film layers |
US5397744A (en) * | 1991-02-19 | 1995-03-14 | Sony Corporation | Aluminum metallization method |
US5380678A (en) * | 1991-03-12 | 1995-01-10 | Yu; Chang | Bilayer barrier metal method for obtaining 100% step-coverage in contact vias without junction degradation |
US5434044A (en) * | 1991-07-24 | 1995-07-18 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5365112A (en) * | 1991-10-14 | 1994-11-15 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having an improved bonding pad structure |
US5371042A (en) * | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
US5365104A (en) * | 1993-03-25 | 1994-11-15 | Paradigm Technology, Inc. | Oxynitride fuse protective/passivation film for integrated circuit having resistors |
Cited By (275)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20090236607A1 (en) * | 1992-12-09 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6031290A (en) * | 1992-12-09 | 2000-02-29 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6166414A (en) * | 1992-12-09 | 2000-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US20070012923A1 (en) * | 1992-12-09 | 2007-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US20040051102A1 (en) * | 1992-12-09 | 2004-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6608353B2 (en) | 1992-12-09 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having pixel electrode connected to a laminate structure |
US7061016B2 (en) | 1992-12-09 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US6448612B1 (en) | 1992-12-09 | 2002-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor |
US20040023445A1 (en) * | 1992-12-09 | 2004-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US7105898B2 (en) | 1992-12-09 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US7547916B2 (en) | 1992-12-09 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US8294152B2 (en) | 1992-12-09 | 2012-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit including pixel electrode comprising conductive film |
US7045399B2 (en) | 1992-12-09 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US20050145847A1 (en) * | 1992-12-09 | 2005-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit |
US7351624B2 (en) | 1993-01-18 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
US20020123179A1 (en) * | 1993-01-18 | 2002-09-05 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
US6984551B2 (en) | 1993-01-18 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
US20060128081A1 (en) * | 1993-01-18 | 2006-06-15 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
US20060014337A1 (en) * | 1993-08-27 | 2006-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7410849B2 (en) | 1993-08-27 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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US8133770B2 (en) | 1993-08-27 | 2012-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6867431B2 (en) | 1993-09-20 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8198683B2 (en) | 1993-09-20 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistors with silicided impurity regions |
US20110068339A1 (en) * | 1993-09-20 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7847355B2 (en) | 1993-09-20 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistors with silicided impurity regions |
US20090289254A1 (en) * | 1993-09-20 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7381599B2 (en) | 1993-09-20 | 2008-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20050142705A1 (en) * | 1993-09-20 | 2005-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7569856B2 (en) | 1993-09-20 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7525158B2 (en) | 1993-09-20 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having pixel electrode and peripheral circuit |
US20070096224A1 (en) * | 1993-10-01 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7166503B2 (en) | 1993-10-01 | 2007-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a TFT with laser irradiation |
US6777763B1 (en) | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US8053778B2 (en) | 1993-10-01 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US20050085020A1 (en) * | 1993-10-01 | 2005-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US8324693B2 (en) | 1993-10-01 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7170138B2 (en) | 1993-10-01 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20090200611A1 (en) * | 1993-10-01 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US20110101360A1 (en) * | 1993-10-01 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7615786B2 (en) | 1993-10-01 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor incorporating an integrated capacitor and pixel region |
US20050040476A1 (en) * | 1993-10-01 | 2005-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and a method for manufacturing the same |
US7863619B2 (en) | 1993-10-01 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7301209B2 (en) | 1993-10-01 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20060033690A1 (en) * | 1994-10-31 | 2006-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type flat-panel display device |
US7298357B2 (en) | 1994-10-31 | 2007-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type flat-panel display device |
US6972746B1 (en) | 1994-10-31 | 2005-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type flat-panel display device |
US7687809B2 (en) | 1995-01-17 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
US6265745B1 (en) | 1995-02-21 | 2001-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US7615423B2 (en) | 1995-02-21 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6921686B2 (en) | 1995-02-21 | 2005-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US7045403B2 (en) | 1995-02-21 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6709905B2 (en) | 1995-02-21 | 2004-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
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US20060141688A1 (en) * | 1995-02-21 | 2006-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
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US5780908A (en) * | 1995-05-09 | 1998-07-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor apparatus with tungstein nitride |
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US6979841B2 (en) | 1996-06-04 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and fabrication method thereof |
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US7414288B2 (en) | 1996-06-04 | 2008-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having display device |
US20040046174A1 (en) * | 1996-06-04 | 2004-03-11 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Semiconductor integrated circuit and fabrication method thereof |
US20060043376A1 (en) * | 1996-06-04 | 2006-03-02 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Semiconductor device having display device |
US20040232423A1 (en) * | 1996-06-04 | 2004-11-25 | Semiconductor Energy Laboratory Co., Ltd, A Japan Corporation | Semiconductor integrated circuit and fabrication method thereof |
US20080290345A1 (en) * | 1996-06-04 | 2008-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having display device |
US6972435B2 (en) | 1996-06-04 | 2005-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Camera having display device utilizing TFT |
US20070210451A1 (en) * | 1996-10-31 | 2007-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US7993992B2 (en) | 1996-10-31 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US7622740B2 (en) | 1996-10-31 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US20100055852A1 (en) * | 1996-10-31 | 2010-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
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KR100590737B1 (ko) * | 1998-03-28 | 2006-06-19 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 박막 트랜지스터를 포함한 전자 장치 |
US5990493A (en) * | 1998-05-14 | 1999-11-23 | Advanced Micro Devices, Inc. | Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium |
US6392810B1 (en) | 1998-10-05 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device |
US6451644B1 (en) * | 1998-11-06 | 2002-09-17 | Advanced Micro Devices, Inc. | Method of providing a gate conductor with high dopant activation |
US20060081931A1 (en) * | 1998-11-09 | 2006-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US8653595B2 (en) | 1998-11-09 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
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US7923779B2 (en) | 1998-11-09 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
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US20050104068A1 (en) * | 1998-11-17 | 2005-05-19 | Shunpei Yamazaki | Method of fabricating a semiconductor device |
US7439543B2 (en) | 1998-11-17 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising thin film transistor comprising conductive film having tapered edge |
US8680532B2 (en) | 1998-11-17 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
US8957422B2 (en) | 1998-11-17 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
US9627460B2 (en) | 1998-11-17 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
US20060051906A1 (en) * | 1998-11-17 | 2006-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
US8049275B2 (en) | 1998-11-17 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20030122132A1 (en) * | 1998-11-25 | 2003-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of fabricating the same |
US8373171B2 (en) | 1998-11-25 | 2013-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a triple-layer wiring structure |
US7564059B2 (en) | 1998-11-25 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gates |
US20060208258A1 (en) * | 1998-11-25 | 2006-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of fabricating the same |
US20110233554A1 (en) * | 1998-11-25 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device, and method of fabricating the same |
US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US9035316B2 (en) | 1998-11-25 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Device comprising EL element electrically connected to P-channel transistor |
US20060091387A1 (en) * | 1998-11-25 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7064020B2 (en) * | 1998-11-25 | 2006-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a gate electrode with a three layer structure |
US7956362B2 (en) | 1998-11-25 | 2011-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and wiring structure of triple-layer |
US9368642B2 (en) | 1998-12-18 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US20020190321A1 (en) * | 1998-12-18 | 2002-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US8492768B2 (en) | 1998-12-18 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US8252637B2 (en) | 1998-12-18 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US8816347B2 (en) | 1998-12-18 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6891195B2 (en) | 1998-12-18 | 2005-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US7952093B2 (en) | 1998-12-18 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6936844B1 (en) * | 1999-03-26 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a gate wiring comprising laminated wirings |
US20050269639A1 (en) * | 1999-03-26 | 2005-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electrooptical device |
US9035314B2 (en) | 1999-03-26 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electrooptical device |
US8866143B2 (en) | 1999-04-12 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US8071981B2 (en) | 1999-04-12 | 2011-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US20060249733A1 (en) * | 1999-04-12 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US7855380B2 (en) | 1999-04-12 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US8129721B2 (en) * | 1999-04-12 | 2012-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US20060261338A1 (en) * | 1999-04-12 | 2006-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US20040214439A1 (en) * | 1999-04-30 | 2004-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7858987B2 (en) | 1999-04-30 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20060121736A1 (en) * | 1999-04-30 | 2006-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7015141B2 (en) | 1999-04-30 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8097884B2 (en) | 1999-04-30 | 2012-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6753257B2 (en) | 1999-04-30 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20030129791A1 (en) * | 1999-04-30 | 2003-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6534826B2 (en) | 1999-04-30 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8748898B2 (en) | 1999-04-30 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7573069B2 (en) | 1999-04-30 | 2009-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20050159940A1 (en) * | 1999-05-27 | 2005-07-21 | America Online, Inc., A Delaware Corporation | Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec |
US20090290082A1 (en) * | 1999-07-06 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Fabrication Method Thereof |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US8227806B2 (en) | 1999-07-06 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration |
US20050067617A1 (en) * | 1999-07-06 | 2005-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7348599B2 (en) | 1999-07-06 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7569854B2 (en) | 1999-07-06 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US8859353B2 (en) | 1999-07-06 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US20040222467A1 (en) * | 1999-07-06 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US8664660B2 (en) | 1999-07-06 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6952020B1 (en) | 1999-07-06 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9786787B2 (en) | 1999-07-06 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US20070205413A1 (en) * | 1999-07-06 | 2007-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8530896B2 (en) | 1999-07-06 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a pixel unit including an auxiliary capacitor |
US9236400B2 (en) | 1999-07-06 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9343570B2 (en) | 1999-07-06 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6885366B1 (en) | 1999-09-30 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7106316B2 (en) | 1999-09-30 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US20050156920A1 (en) * | 1999-09-30 | 2005-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US20070200139A1 (en) * | 2001-06-01 | 2007-08-30 | Hiroshi Shibata | Semiconductor device, manufacturing method thereof, and display device |
US8575696B2 (en) * | 2001-06-01 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
US9219157B2 (en) | 2001-06-01 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
US9362410B2 (en) | 2001-06-01 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8946718B2 (en) | 2002-04-09 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US7994504B2 (en) | 2002-04-09 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US7999263B2 (en) | 2002-04-09 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8008666B2 (en) | 2002-04-09 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US7955975B2 (en) | 2002-04-09 | 2011-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US20030189210A1 (en) * | 2002-04-09 | 2003-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8946717B2 (en) | 2002-04-09 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US7671369B2 (en) | 2002-04-09 | 2010-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US8120033B2 (en) | 2002-04-09 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US8502215B2 (en) | 2002-04-09 | 2013-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US20110049522A1 (en) * | 2002-04-09 | 2011-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US20050282305A1 (en) * | 2002-04-09 | 2005-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8415669B2 (en) | 2002-04-09 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US8709847B2 (en) | 2002-04-15 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating display device |
US8643021B2 (en) | 2002-04-15 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including multiple insulating films |
US8115210B2 (en) | 2002-04-15 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US7964874B2 (en) | 2002-04-15 | 2011-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a protective circuit |
US8368072B2 (en) | 2002-04-15 | 2013-02-05 | Semiconductor Energy Labratory Co., Ltd. | Display device and method of fabricating the same |
US20090020762A1 (en) * | 2002-04-15 | 2009-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9366930B2 (en) | 2002-05-17 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device with capacitor elements |
US8120031B2 (en) | 2002-05-17 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film |
US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US20060043510A1 (en) * | 2004-07-30 | 2006-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US8217396B2 (en) | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
US9520410B2 (en) | 2004-07-30 | 2016-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US11310457B2 (en) | 2004-07-30 | 2022-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US8829527B2 (en) | 2004-07-30 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US8823009B2 (en) | 2004-07-30 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US20060038176A1 (en) * | 2004-08-20 | 2006-02-23 | Kengo Akimoto | Semiconductor device and manufacturing method thereof |
US7417249B2 (en) | 2004-08-20 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum |
US9252227B2 (en) | 2004-09-15 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10109744B2 (en) | 2004-09-15 | 2018-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11482624B2 (en) | 2004-09-15 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7859606B2 (en) | 2004-09-15 | 2010-12-28 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
US8514341B2 (en) | 2004-09-15 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8786794B2 (en) | 2004-09-15 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20110140120A1 (en) * | 2004-09-15 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device |
US10903367B2 (en) | 2004-09-15 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9716180B2 (en) | 2004-09-15 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10573757B2 (en) | 2004-09-15 | 2020-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20080136989A1 (en) * | 2004-09-15 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device |
US20060095001A1 (en) * | 2004-10-29 | 2006-05-04 | Transcutaneous Technologies Inc. | Electrode and iontophoresis device |
US20070015307A1 (en) * | 2004-12-27 | 2007-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7563658B2 (en) | 2004-12-27 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20070066930A1 (en) * | 2005-06-20 | 2007-03-22 | Transcutaneous Technologies, Inc. | Iontophoresis device and method of producing the same |
US20090216175A1 (en) * | 2005-08-05 | 2009-08-27 | Transcu Ltd. | Transdermal Administration Device and Method of Controlling the Same |
US8386030B2 (en) | 2005-08-08 | 2013-02-26 | Tti Ellebeau, Inc. | Iontophoresis device |
US20070060859A1 (en) * | 2005-08-08 | 2007-03-15 | Transcutaneous Technologies Inc. | Iontophoresis device |
US20070060860A1 (en) * | 2005-08-18 | 2007-03-15 | Transcutaneous Technologies Inc. | Iontophoresis device |
US20100016781A1 (en) * | 2005-08-29 | 2010-01-21 | Mizuo Nakayama | Iontophoresis device selecting drug to be administered on the basis of information form sensor |
US20100030128A1 (en) * | 2005-09-06 | 2010-02-04 | Kazuma Mitsuguchi | Iontophoresis device |
US20070066932A1 (en) * | 2005-09-15 | 2007-03-22 | Transcutaneous Technologies Inc. | Iontophoresis device |
US7890164B2 (en) | 2005-09-15 | 2011-02-15 | Tti Ellebeau, Inc. | Iontophoresis device |
US20090216177A1 (en) * | 2005-09-16 | 2009-08-27 | Tti Ellebeau,Inc | Catheter-type iontophoresis device |
US20090299265A1 (en) * | 2005-09-30 | 2009-12-03 | Tti Ellebeau, Inc. | Electrode Assembly for Iontophoresis Having Shape-Memory Separator and Iontophoresis Device Using the Same |
US20070093787A1 (en) * | 2005-09-30 | 2007-04-26 | Transcutaneous Technologies Inc. | Iontophoresis device to deliver multiple active agents to biological interfaces |
US20090187134A1 (en) * | 2005-09-30 | 2009-07-23 | Hidero Akiyama | Iontophoresis Device Controlling Amounts of a Sleep-Inducing Agent and a Stimulant to be Administered and Time at Which the Drugs are Administered |
US20070232983A1 (en) * | 2005-09-30 | 2007-10-04 | Smith Gregory A | Handheld apparatus to deliver active agents to biological interfaces |
US20070078445A1 (en) * | 2005-09-30 | 2007-04-05 | Curt Malloy | Synchronization apparatus and method for iontophoresis device to deliver active agents to biological interfaces |
US20070197955A1 (en) * | 2005-10-12 | 2007-08-23 | Transcutaneous Technologies Inc. | Mucous membrane adhesion-type iontophoresis device |
US20090005721A1 (en) * | 2005-12-09 | 2009-01-01 | Tti Ellebeau, Inc. | Packaged iontophoresis system |
US20080033338A1 (en) * | 2005-12-28 | 2008-02-07 | Smith Gregory A | Electroosmotic pump apparatus and method to deliver active agents to biological interfaces |
US20080033398A1 (en) * | 2005-12-29 | 2008-02-07 | Transcutaneous Technologies Inc. | Device and method for enhancing immune response by electrical stimulation |
US9213206B2 (en) | 2006-04-06 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US20070236640A1 (en) * | 2006-04-06 | 2007-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US11442317B2 (en) | 2006-04-06 | 2022-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US11921382B2 (en) | 2006-04-06 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US20110032435A1 (en) * | 2006-04-06 | 2011-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US9958736B2 (en) | 2006-04-06 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US9207504B2 (en) | 2006-04-06 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US11073729B2 (en) | 2006-04-06 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US11644720B2 (en) | 2006-04-06 | 2023-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US10684517B2 (en) | 2006-04-06 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
US11106096B2 (en) | 2006-05-16 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US8338865B2 (en) | 2006-05-16 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US9709861B2 (en) | 2006-05-16 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US11726371B2 (en) | 2006-05-16 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | FFS-mode liquid crystal display device comprising a top-gate transistor and an auxiliary wiring connected to a common electrode in a pixel portion |
US11061285B2 (en) | 2006-05-16 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a dogleg-like shaped pixel electrode in a plane view having a plurality of dogleg-like shaped openings and semiconductor device |
US10509271B2 (en) | 2006-05-16 | 2019-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a semiconductor film having a channel formation region overlapping with a conductive film in a floating state |
US20110024758A1 (en) * | 2006-05-16 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US10001678B2 (en) | 2006-05-16 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US8872182B2 (en) | 2006-05-16 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US11435626B2 (en) | 2006-05-16 | 2022-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US8841671B2 (en) | 2006-05-16 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US9268188B2 (en) | 2006-05-16 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
US8610862B2 (en) | 2006-06-02 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US11960174B2 (en) | 2006-06-02 | 2024-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US20110037917A1 (en) * | 2006-06-02 | 2011-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US10095070B2 (en) | 2006-06-02 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US8537318B2 (en) | 2006-06-02 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US20080114282A1 (en) * | 2006-09-05 | 2008-05-15 | Transcu Ltd. | Transdermal drug delivery systems, devices, and methods using inductive power supplies |
US8062783B2 (en) | 2006-12-01 | 2011-11-22 | Tti Ellebeau, Inc. | Systems, devices, and methods for powering and/or controlling devices, for instance transdermal delivery devices |
US20080154178A1 (en) * | 2006-12-01 | 2008-06-26 | Transcutaneous Technologies Inc. | Systems, devices, and methods for powering and/or controlling devices, for instance transdermal delivery devices |
US8878172B2 (en) | 2008-10-24 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US20100102311A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US10692894B2 (en) | 2008-10-24 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US9647137B2 (en) | 2008-10-24 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US10978490B2 (en) | 2008-10-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US10141343B2 (en) | 2008-10-24 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US9111806B2 (en) | 2008-10-24 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US11594555B2 (en) | 2008-10-24 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, thin film transistor, and display device |
US20100312168A1 (en) * | 2009-06-09 | 2010-12-09 | Yoshimasa Yoshida | Long life high capacity electrode, device, and method of manufacture |
US8471256B2 (en) | 2009-11-27 | 2013-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9748436B2 (en) | 2009-11-27 | 2017-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11894486B2 (en) | 2009-11-27 | 2024-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10396236B2 (en) | 2009-11-27 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US20190109259A1 (en) | 2009-11-27 | 2019-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9293595B2 (en) | 2010-09-03 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8946011B2 (en) | 2010-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013131821A1 (en) * | 2012-03-05 | 2013-09-12 | Abb Technology Ag | Power semiconductor device and method for manufacturing thereof |
GB2514711B (en) * | 2012-03-05 | 2016-04-27 | Abb Technology Ag | Power semiconductor device and method for manufacturing thereof |
US20140370665A1 (en) * | 2012-03-05 | 2014-12-18 | Abb Technology Ag | Power semiconductor device and method for manufacturing such a power semiconductor device |
GB2514711A (en) * | 2012-03-05 | 2014-12-03 | Abb Technology Ag | Power semiconductor device and method for manufacturing thereof |
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