CN101687708B - 复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法 - Google Patents
复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法 Download PDFInfo
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Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP183799/2007 | 2007-07-13 | ||
JP2007183799 | 2007-07-13 | ||
PCT/JP2008/062171 WO2009011232A1 (ja) | 2007-07-13 | 2008-07-04 | 複合酸化物焼結体、アモルファス複合酸化膜の製造方法、アモルファス複合酸化膜、結晶質複合酸化膜の製造方法及び結晶質複合酸化膜 |
Publications (2)
Publication Number | Publication Date |
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CN101687708A CN101687708A (zh) | 2010-03-31 |
CN101687708B true CN101687708B (zh) | 2013-01-02 |
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Application Number | Title | Priority Date | Filing Date |
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CN2008800226763A Active CN101687708B (zh) | 2007-07-13 | 2008-07-04 | 复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法 |
Country Status (7)
Country | Link |
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US (2) | US8277694B2 (zh) |
EP (1) | EP2172436A4 (zh) |
JP (1) | JP4489842B2 (zh) |
KR (1) | KR101155358B1 (zh) |
CN (1) | CN101687708B (zh) |
TW (2) | TWI573773B (zh) |
WO (1) | WO2009011232A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4885274B2 (ja) * | 2007-06-26 | 2012-02-29 | Jx日鉱日石金属株式会社 | アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法および結晶質複合酸化膜の製造方法 |
KR101224769B1 (ko) * | 2008-06-10 | 2013-01-21 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링용 산화물 소결체 타겟 및 그 제조 방법 |
JP5416991B2 (ja) * | 2009-03-03 | 2014-02-12 | Jx日鉱日石金属株式会社 | 酸化物焼結体ターゲット、該ターゲットの製造方法、透明導電膜および該透明導電膜の製造方法 |
KR101267164B1 (ko) | 2009-06-05 | 2013-05-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 산화물 소결체, 그 제조 방법 및 산화물 소결체 제조용 원료 분말 |
CN105439541B (zh) | 2009-10-06 | 2018-09-14 | 吉坤日矿日石金属株式会社 | 氧化铟烧结体、氧化铟透明导电膜以及该透明导电膜的制造方法 |
JP5411945B2 (ja) | 2009-10-26 | 2014-02-12 | Jx日鉱日石金属株式会社 | 酸化インジウム系焼結体及び酸化インジウム系透明導電膜 |
KR20180063386A (ko) * | 2009-11-19 | 2018-06-11 | 가부시키가이샤 아루박 | 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟 |
TWI494553B (zh) | 2010-02-05 | 2015-08-01 | Samsung Electronics Co Ltd | 評估led光學性質之設備及方法以及製造led裝置之方法 |
US9337478B2 (en) * | 2012-02-14 | 2016-05-10 | Shailesh Upreti | Composite silicon or composite tin particles |
CN105830173B (zh) | 2014-01-28 | 2018-06-15 | 株式会社钟化 | 带有透明电极的基板及其制造方法 |
US9988707B2 (en) | 2014-05-30 | 2018-06-05 | Ppg Industries Ohio, Inc. | Transparent conducting indium doped tin oxide |
KR102251775B1 (ko) | 2014-07-18 | 2021-05-12 | 삼성전자주식회사 | 전극 구조체 및 이를 사용하는 접촉 감지 센서 |
US10438715B2 (en) | 2014-11-12 | 2019-10-08 | Samsung Electronics Co., Ltd. | Nanostructure, method of preparing the same, and panel units comprising the nanostructure |
CN107039101B (zh) | 2015-09-25 | 2020-03-10 | 三星电子株式会社 | 电导体、一维-二维混杂结构体、和包括其的电子器件 |
CN107025951B (zh) | 2015-09-25 | 2020-02-18 | 三星电子株式会社 | 电导体、其制造方法、和包括其的电子器件 |
CN107709270A (zh) * | 2016-03-14 | 2018-02-16 | 捷客斯金属株式会社 | 氧化物烧结体 |
KR102534082B1 (ko) * | 2016-07-07 | 2023-05-19 | 삼성디스플레이 주식회사 | 표시 기판, 표시장치 및 터치패널 |
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CN1090946A (zh) * | 1992-12-09 | 1994-08-17 | 株式会社半导体能源研究所 | 电子电路 |
CN1423621A (zh) * | 2001-03-28 | 2003-06-11 | 株式会社日矿材料 | 氧化铟中固溶锡的ito粉末制造方法以及ito靶的制造方法 |
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JPWO2009011232A1 (ja) | 2010-09-16 |
US8728358B2 (en) | 2014-05-20 |
EP2172436A4 (en) | 2013-07-31 |
US20120319057A1 (en) | 2012-12-20 |
US20100140570A1 (en) | 2010-06-10 |
EP2172436A1 (en) | 2010-04-07 |
CN101687708A (zh) | 2010-03-31 |
TWI476159B (zh) | 2015-03-11 |
JP4489842B2 (ja) | 2010-06-23 |
TWI573773B (zh) | 2017-03-11 |
TW201504188A (zh) | 2015-02-01 |
WO2009011232A1 (ja) | 2009-01-22 |
KR20100010926A (ko) | 2010-02-02 |
US8277694B2 (en) | 2012-10-02 |
KR101155358B1 (ko) | 2012-06-19 |
TW200906729A (en) | 2009-02-16 |
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