TWI589527B - 氫化鍺烷之生產方法以及氫化鍺烷 - Google Patents
氫化鍺烷之生產方法以及氫化鍺烷 Download PDFInfo
- Publication number
- TWI589527B TWI589527B TW099142322A TW99142322A TWI589527B TW I589527 B TWI589527 B TW I589527B TW 099142322 A TW099142322 A TW 099142322A TW 99142322 A TW99142322 A TW 99142322A TW I589527 B TWI589527 B TW I589527B
- Authority
- TW
- Taiwan
- Prior art keywords
- decane
- hydrogenated
- hydrogenated decane
- halogenated
- compound
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 claims description 118
- 150000001875 compounds Chemical class 0.000 claims description 43
- 238000005984 hydrogenation reaction Methods 0.000 claims description 29
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 229910052707 ruthenium Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- 229910052736 halogen Inorganic materials 0.000 claims description 13
- 150000002367 halogens Chemical class 0.000 claims description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- -1 hydrogenated decane compound Chemical class 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 125000004429 atom Chemical group 0.000 claims description 6
- 239000012442 inert solvent Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- MGWAVDBGNNKXQV-UHFFFAOYSA-N diisobutyl phthalate Chemical compound CC(C)COC(=O)C1=CC=CC=C1C(=O)OCC(C)C MGWAVDBGNNKXQV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 230000004069 differentiation Effects 0.000 claims description 3
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 238000001237 Raman spectrum Methods 0.000 claims description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 229910010082 LiAlH Inorganic materials 0.000 claims 1
- 238000004821 distillation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910010084 LiAlH4 Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- OYKIERKRPUDEIV-UHFFFAOYSA-N decane;hydrochloride Chemical compound Cl.CCCCCCCCCC OYKIERKRPUDEIV-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Polymers (AREA)
- Chemical Vapour Deposition (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Catalysts (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009056731A DE102009056731A1 (de) | 2009-12-04 | 2009-12-04 | Halogenierte Polysilane und Polygermane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201134767A TW201134767A (en) | 2011-10-16 |
| TWI589527B true TWI589527B (zh) | 2017-07-01 |
Family
ID=43499339
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099142322A TWI589527B (zh) | 2009-12-04 | 2010-12-06 | 氫化鍺烷之生產方法以及氫化鍺烷 |
| TW099142326A TW201139283A (en) | 2009-12-04 | 2010-12-06 | Chlorinated oligogermane and method of manufacturing the same |
| TW099142328A TWI580710B (zh) | 2009-12-04 | 2010-12-06 | 鹵化聚矽烷的製備方法 |
| TW099142323A TWI561559B (en) | 2009-12-04 | 2010-12-06 | Process for producing hydrogenated polygermasilane and polygermasilane |
| TW099142324A TW201134764A (en) | 2009-12-04 | 2010-12-06 | Method of producing oligosilane |
| TW099142320A TW201132587A (en) | 2009-12-04 | 2010-12-06 | Method of removing impurities from silicon |
| TW099142321A TW201132708A (en) | 2009-12-04 | 2010-12-06 | Kinetically stable chlorinated polysilane, method of manufacturing the same, and use of the same |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099142326A TW201139283A (en) | 2009-12-04 | 2010-12-06 | Chlorinated oligogermane and method of manufacturing the same |
| TW099142328A TWI580710B (zh) | 2009-12-04 | 2010-12-06 | 鹵化聚矽烷的製備方法 |
| TW099142323A TWI561559B (en) | 2009-12-04 | 2010-12-06 | Process for producing hydrogenated polygermasilane and polygermasilane |
| TW099142324A TW201134764A (en) | 2009-12-04 | 2010-12-06 | Method of producing oligosilane |
| TW099142320A TW201132587A (en) | 2009-12-04 | 2010-12-06 | Method of removing impurities from silicon |
| TW099142321A TW201132708A (en) | 2009-12-04 | 2010-12-06 | Kinetically stable chlorinated polysilane, method of manufacturing the same, and use of the same |
Country Status (9)
| Country | Link |
|---|---|
| US (7) | US9139702B2 (https=) |
| EP (7) | EP2507169A1 (https=) |
| JP (6) | JP5731531B2 (https=) |
| CN (3) | CN102639644A (https=) |
| BR (2) | BR112012013500A2 (https=) |
| CA (2) | CA2782247A1 (https=) |
| DE (1) | DE102009056731A1 (https=) |
| TW (7) | TWI589527B (https=) |
| WO (7) | WO2011067416A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| US9577243B2 (en) | 2010-05-28 | 2017-02-21 | Sion Power Corporation | Use of expanded graphite in lithium/sulphur batteries |
| KR101250172B1 (ko) * | 2012-08-20 | 2013-04-05 | 오씨아이머티리얼즈 주식회사 | 고수율로 모노 게르만 가스를 제조하는 방법 |
| DE102012224202A1 (de) * | 2012-12-21 | 2014-07-10 | Evonik Industries Ag | Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen |
| DE102013207447A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan |
| DE102013207444A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
| US9174853B2 (en) | 2013-12-06 | 2015-11-03 | Gelest Technologies, Inc. | Method for producing high purity germane by a continuous or semi-continuous process |
| DE102014007685B4 (de) | 2014-05-21 | 2022-04-07 | Sven Holl | Verfahren zur Herstellung von Hexachlordisilan |
| DE102014007766B4 (de) | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| DE102014007768B4 (de) | 2014-05-21 | 2025-07-03 | Sven Holl | Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12 |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| CN106604924B (zh) * | 2014-07-22 | 2020-04-03 | 迈图高新材料有限责任公司 | 用于裂解单硅烷、聚硅烷和/或低聚硅烷中的硅-硅键和/或硅-氯键的方法 |
| DE102014013250B4 (de) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
| JP2018502817A (ja) * | 2014-12-15 | 2018-02-01 | ナガルジュナ ファーティライザーズ アンド ケミカルズ リミテッド | 塩素化オリゴシランの製造方法 |
| DE102016014900A1 (de) * | 2016-12-15 | 2018-06-21 | Psc Polysilane Chemicals Gmbh | Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen |
| DE102016225872A1 (de) * | 2016-12-21 | 2018-06-21 | Evonik Degussa Gmbh | Verfahren zur Trennung von Gemischen höherer Silane |
| EP3596117A4 (en) | 2017-03-17 | 2021-01-13 | The Johns Hopkins University | TARGETED EPIGENETIC THERAPY AGAINST THE DISTAL EXPRESSION REGULATORY ELEMENT OF TGFB2 |
| US12492122B2 (en) * | 2018-05-02 | 2025-12-09 | Hysilabs, Sas | Process for producing and regenerating hydrogen carrier compounds |
| JP7125062B2 (ja) * | 2019-01-25 | 2022-08-24 | 株式会社東芝 | 判定方法及び処理方法 |
| CN117247018B (zh) * | 2023-09-22 | 2025-10-31 | 新疆大全新能源股份有限公司 | 一种回收新鲜料系统重杂的方法和装置 |
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| DE1049835B (de) | 1959-02-05 | Kali-Chemie Aktiengesellschaft, Hannover | Verfahren zur Herstellung von Siliciumhydriden | |
| DE108077C (https=) | ||||
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| DE1061302B (de) | 1956-12-12 | 1959-07-16 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. und V. Gruppe des Periodischen Systems |
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