JP5731531B2 - 反応速度論的に安定した塩素化ポリシラン、この製造及び使用 - Google Patents
反応速度論的に安定した塩素化ポリシラン、この製造及び使用 Download PDFInfo
- Publication number
- JP5731531B2 JP5731531B2 JP2012541537A JP2012541537A JP5731531B2 JP 5731531 B2 JP5731531 B2 JP 5731531B2 JP 2012541537 A JP2012541537 A JP 2012541537A JP 2012541537 A JP2012541537 A JP 2012541537A JP 5731531 B2 JP5731531 B2 JP 5731531B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilane
- ppm
- mixture according
- mixture
- halogenated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920000548 poly(silane) polymer Polymers 0.000 title claims description 181
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000203 mixture Substances 0.000 claims description 89
- 239000000460 chlorine Substances 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000000126 substance Substances 0.000 claims description 32
- 229910052801 chlorine Inorganic materials 0.000 claims description 31
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 125000001424 substituent group Chemical group 0.000 claims description 23
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 claims description 22
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 21
- 238000000354 decomposition reaction Methods 0.000 claims description 21
- 238000001069 Raman spectroscopy Methods 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 150000002367 halogens Chemical class 0.000 claims description 15
- 238000005660 chlorination reaction Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000001237 Raman spectrum Methods 0.000 claims description 11
- 238000004821 distillation Methods 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007248 oxidative elimination reaction Methods 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910008045 Si-Si Inorganic materials 0.000 claims description 6
- 229910006411 Si—Si Inorganic materials 0.000 claims description 6
- 239000012442 inert solvent Substances 0.000 claims description 6
- 238000001845 vibrational spectrum Methods 0.000 claims description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 230000026030 halogenation Effects 0.000 claims 1
- 238000005658 halogenation reaction Methods 0.000 claims 1
- 239000000047 product Substances 0.000 description 32
- 229910003902 SiCl 4 Inorganic materials 0.000 description 19
- 239000000243 solution Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 10
- 239000007858 starting material Substances 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000004508 fractional distillation Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 4
- 239000005046 Chlorosilane Substances 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000005194 fractionation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000269 nucleophilic effect Effects 0.000 description 2
- 238000011002 quantification Methods 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 2
- 238000005133 29Si NMR spectroscopy Methods 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- FLZQPOPFIRDEAH-UHFFFAOYSA-N Cl[Si](Cl)(Cl)[Si](Cl)([Si](Cl)(Cl)Cl)[Si](Cl)([Si](Cl)(Cl)Cl)[Si](Cl)(Cl)Cl Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)([Si](Cl)(Cl)Cl)[Si](Cl)([Si](Cl)(Cl)Cl)[Si](Cl)(Cl)Cl FLZQPOPFIRDEAH-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical group 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- KSCFJBIXMNOVSH-UHFFFAOYSA-N dyphylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1N(CC(O)CO)C=N2 KSCFJBIXMNOVSH-UHFFFAOYSA-N 0.000 description 1
- 239000012847 fine chemical Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Polymers (AREA)
- Chemical Vapour Deposition (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Catalysts (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009056731.3 | 2009-12-04 | ||
| DE102009056731A DE102009056731A1 (de) | 2009-12-04 | 2009-12-04 | Halogenierte Polysilane und Polygermane |
| PCT/EP2010/068991 WO2011067415A1 (de) | 2009-12-04 | 2010-12-06 | Kinetisch stabile chlorierte polysilane und deren herstellung und verwendung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013512843A JP2013512843A (ja) | 2013-04-18 |
| JP5731531B2 true JP5731531B2 (ja) | 2015-06-10 |
Family
ID=43499339
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012541537A Expired - Fee Related JP5731531B2 (ja) | 2009-12-04 | 2010-12-06 | 反応速度論的に安定した塩素化ポリシラン、この製造及び使用 |
| JP2012541533A Expired - Fee Related JP6297778B2 (ja) | 2009-12-04 | 2010-12-06 | 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン |
| JP2012541535A Pending JP2013512842A (ja) | 2009-12-04 | 2010-12-06 | 塩素化オリゴゲルマンとその製造方法 |
| JP2012541539A Pending JP2013512845A (ja) | 2009-12-04 | 2010-12-06 | 水素化ポリゲルマシランを製造するための方法および水素化ポリゲルマシラン |
| JP2012541538A Ceased JP2013512844A (ja) | 2009-12-04 | 2010-12-06 | ハロゲン化ポリシランを生成する方法 |
| JP2016090381A Pending JP2016179935A (ja) | 2009-12-04 | 2016-04-28 | 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012541533A Expired - Fee Related JP6297778B2 (ja) | 2009-12-04 | 2010-12-06 | 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン |
| JP2012541535A Pending JP2013512842A (ja) | 2009-12-04 | 2010-12-06 | 塩素化オリゴゲルマンとその製造方法 |
| JP2012541539A Pending JP2013512845A (ja) | 2009-12-04 | 2010-12-06 | 水素化ポリゲルマシランを製造するための方法および水素化ポリゲルマシラン |
| JP2012541538A Ceased JP2013512844A (ja) | 2009-12-04 | 2010-12-06 | ハロゲン化ポリシランを生成する方法 |
| JP2016090381A Pending JP2016179935A (ja) | 2009-12-04 | 2016-04-28 | 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン |
Country Status (9)
| Country | Link |
|---|---|
| US (7) | US9139702B2 (https=) |
| EP (7) | EP2507169A1 (https=) |
| JP (6) | JP5731531B2 (https=) |
| CN (3) | CN102639644A (https=) |
| BR (2) | BR112012013500A2 (https=) |
| CA (2) | CA2782247A1 (https=) |
| DE (1) | DE102009056731A1 (https=) |
| TW (7) | TWI589527B (https=) |
| WO (7) | WO2011067416A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| US9577243B2 (en) | 2010-05-28 | 2017-02-21 | Sion Power Corporation | Use of expanded graphite in lithium/sulphur batteries |
| KR101250172B1 (ko) * | 2012-08-20 | 2013-04-05 | 오씨아이머티리얼즈 주식회사 | 고수율로 모노 게르만 가스를 제조하는 방법 |
| DE102012224202A1 (de) * | 2012-12-21 | 2014-07-10 | Evonik Industries Ag | Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen |
| DE102013207447A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan |
| DE102013207444A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
| US9174853B2 (en) | 2013-12-06 | 2015-11-03 | Gelest Technologies, Inc. | Method for producing high purity germane by a continuous or semi-continuous process |
| DE102014007685B4 (de) | 2014-05-21 | 2022-04-07 | Sven Holl | Verfahren zur Herstellung von Hexachlordisilan |
| DE102014007766B4 (de) | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| DE102014007768B4 (de) | 2014-05-21 | 2025-07-03 | Sven Holl | Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12 |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| CN106604924B (zh) * | 2014-07-22 | 2020-04-03 | 迈图高新材料有限责任公司 | 用于裂解单硅烷、聚硅烷和/或低聚硅烷中的硅-硅键和/或硅-氯键的方法 |
| DE102014013250B4 (de) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
| JP2018502817A (ja) * | 2014-12-15 | 2018-02-01 | ナガルジュナ ファーティライザーズ アンド ケミカルズ リミテッド | 塩素化オリゴシランの製造方法 |
| DE102016014900A1 (de) * | 2016-12-15 | 2018-06-21 | Psc Polysilane Chemicals Gmbh | Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen |
| DE102016225872A1 (de) * | 2016-12-21 | 2018-06-21 | Evonik Degussa Gmbh | Verfahren zur Trennung von Gemischen höherer Silane |
| EP3596117A4 (en) | 2017-03-17 | 2021-01-13 | The Johns Hopkins University | TARGETED EPIGENETIC THERAPY AGAINST THE DISTAL EXPRESSION REGULATORY ELEMENT OF TGFB2 |
| US12492122B2 (en) * | 2018-05-02 | 2025-12-09 | Hysilabs, Sas | Process for producing and regenerating hydrogen carrier compounds |
| JP7125062B2 (ja) * | 2019-01-25 | 2022-08-24 | 株式会社東芝 | 判定方法及び処理方法 |
| CN117247018B (zh) * | 2023-09-22 | 2025-10-31 | 新疆大全新能源股份有限公司 | 一种回收新鲜料系统重杂的方法和装置 |
Family Cites Families (109)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1049835B (de) | 1959-02-05 | Kali-Chemie Aktiengesellschaft, Hannover | Verfahren zur Herstellung von Siliciumhydriden | |
| DE108077C (https=) | ||||
| DE340912C (de) | 1916-04-15 | 1921-09-21 | Frank Robert Mc Berty | Einrichtung fuer Fernsprechanlagen |
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
| GB793718A (en) | 1955-08-16 | 1958-04-23 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
| GB832333A (en) | 1956-09-28 | 1960-04-06 | Standard Telephones Cables Ltd | Improvements in methods of producing silane of high purity |
| DE1034159B (de) | 1956-11-03 | 1958-07-17 | Kali Chemie Ag | Verfahren zur Herstellung von Siliciumhydriden |
| DE1061302B (de) | 1956-12-12 | 1959-07-16 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. und V. Gruppe des Periodischen Systems |
| DE1055511B (de) | 1956-12-15 | 1959-04-23 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. Hauptgruppe des Periodischen Systems mit den Ordnungszahlen 14 bis 50 |
| GB823496A (en) | 1957-12-27 | 1959-11-11 | Metal Hydrides Inc | Improvements in method of preparing high purity silicon |
| GB851962A (en) | 1958-06-09 | 1960-10-19 | Allied Chem | Production of pure silane |
| DE1098931B (de) | 1958-07-03 | 1961-02-09 | Wacker Chemie Gmbh | Verfahren zur Reinigung von geschmolzenem Silicium |
| US3050366A (en) | 1959-07-15 | 1962-08-21 | Du Pont | Production of silane by the use of a zinc catalyst |
| DE1096341B (de) | 1959-10-15 | 1961-01-05 | Kali Chemie Ag | Verfahren zur Herstellung von Monosilan |
| DE1187614B (de) | 1963-07-02 | 1965-02-25 | Bayer Ag | Verfahren zur Herstellung von vorzugsweise organisch substituierten Wasserstoffverbindungen der Elemente Bor und Silicium |
| FR1429930A (fr) | 1964-04-17 | 1966-02-25 | Thomson Houston Comp Francaise | Perfectionnements aux méthodes de préparation des hydrures |
| GB1110627A (en) | 1965-03-03 | 1968-04-24 | Ceskoslovenska Akademie Ved | A method of reduction of halosiliceous compounds |
| US3401183A (en) | 1965-12-23 | 1968-09-10 | Gen Electric | Method for preparing organo germanium, tin and silicon hydrides |
| US3704261A (en) | 1971-10-18 | 1972-11-28 | Gen Electric | Preparation of silicon hydrides |
| BE794871A (fr) | 1972-02-02 | 1973-08-01 | Rhone Poulenc Sa | Nouvelles sulfones isopreniques |
| US3926833A (en) | 1973-03-21 | 1975-12-16 | Lithium Corp | Preparation of mixed chlorohydrides of aluminum |
| FR2430917A1 (fr) | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
| US4200621A (en) | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| US4295986A (en) | 1979-05-14 | 1981-10-20 | Gordon Roy G | Low temperature catalytic reduction |
| US4309259A (en) | 1980-05-09 | 1982-01-05 | Motorola, Inc. | High pressure plasma hydrogenation of silicon tetrachloride |
| US4312849A (en) | 1980-09-09 | 1982-01-26 | Aluminum Company Of America | Phosphorous removal in silicon purification |
| DE3034957C2 (de) | 1980-09-17 | 1983-01-13 | Degussa Ag, 6000 Frankfurt | Verfahren und Vorrichtung zum Innenbeschichten von Kontaktrohren |
| US4374111A (en) | 1980-11-21 | 1983-02-15 | Allied Corporation | Production of silane |
| EP0054650B1 (de) * | 1980-12-24 | 1986-01-29 | Hüls Troisdorf Aktiengesellschaft | Verfahren zum Reinigen von Chlorsilanen |
| US4374110A (en) | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
| JPS58156522A (ja) | 1982-03-11 | 1983-09-17 | Mitsui Toatsu Chem Inc | ジシランの製造方法 |
| JPS59500416A (ja) * | 1982-03-18 | 1984-03-15 | ゼネラル・エレクトリック・カンパニイ | ハロゲン化けい素の精製法 |
| US4755370A (en) | 1982-03-18 | 1988-07-05 | General Electric Company | Purification of silicon halides |
| US4407783A (en) | 1982-08-16 | 1983-10-04 | Allied Corporation | Producing silane from silicon tetrafluoride |
| FR2532293A1 (fr) | 1982-08-31 | 1984-03-02 | Rhone Poulenc Spec Chim | Procede continu de preparation de silane |
| US4529707A (en) | 1982-09-21 | 1985-07-16 | General Electric Company | Detection of boron impurities in chlorosilanes |
| FR2533906A1 (fr) | 1982-09-30 | 1984-04-06 | Rhone Poulenc Spec Chim | Procede et dispositif pour la preparation de silane pur par reaction de chlorosilanes avec l'hydrure de lithium |
| US4632816A (en) * | 1982-12-13 | 1986-12-30 | Ethyl Corporation | Process for production of silane |
| CA1225230A (en) | 1982-12-13 | 1987-08-11 | Everett M. Marlett | Process for the production of silane |
| DE3247362A1 (de) | 1982-12-22 | 1984-06-28 | Studiengesellschaft Kohle mbH, 4330 Mülheim | Verfahren zur herstellung von silicium-wasserstoff-verbindungen, insbesondere des silans |
| DE3342496A1 (de) | 1983-11-24 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum reinigen von mg-silicium |
| JPS60176915A (ja) | 1984-02-21 | 1985-09-11 | Central Glass Co Ltd | ジシランの製造法 |
| JPS60221301A (ja) * | 1984-04-13 | 1985-11-06 | Mitsui Toatsu Chem Inc | 水素化ゲルマニウムの製造方法 |
| FR2576902B1 (fr) | 1985-02-04 | 1987-02-13 | Rhone Poulenc Spec Chim | Procede de fabrication d'hydrogeno-silanes |
| JPS61191512A (ja) | 1985-02-20 | 1986-08-26 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
| US4778692A (en) * | 1985-02-20 | 1988-10-18 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JPS61191022A (ja) * | 1985-02-20 | 1986-08-25 | Canon Inc | 堆積膜形成法 |
| JPH0688773B2 (ja) * | 1985-03-08 | 1994-11-09 | 三井東圧化学株式会社 | ヘキサクロロジシランの製造方法 |
| US4725419A (en) | 1985-05-17 | 1988-02-16 | Ethyl Corporation | Silane production from magnesium hydride |
| EP0316472A1 (en) | 1987-11-17 | 1989-05-24 | Ethyl Corporation | Silane production from magnesium hydride |
| JPS6217004A (ja) * | 1985-07-12 | 1987-01-26 | Mitsui Toatsu Chem Inc | ゲルマン類の製造方法 |
| US4824657A (en) | 1985-11-27 | 1989-04-25 | E. I. Du Pont De Nemours And Company | Process for reducing silicon, germanium and tin halides |
| US4777023A (en) | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
| US4792460A (en) * | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
| DE3635064A1 (de) | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| US4762808A (en) | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| US4847061A (en) | 1987-07-20 | 1989-07-11 | Ethyl Corporation | Process for preparation of silane |
| JP2536027B2 (ja) | 1988-03-16 | 1996-09-18 | 東亞合成株式会社 | ジシランの製造方法 |
| US4855120A (en) | 1988-10-24 | 1989-08-08 | Ethyl Corporation | Production of silane and useful coproducts |
| DE3926595A1 (de) | 1989-08-11 | 1991-02-14 | Degussa | Verfahren zur hydrierung halogensubstituierter verbindungen |
| JPH03205055A (ja) | 1990-01-04 | 1991-09-06 | Hara Herusu Kogyo Kk | 浴槽の気泡発生装置 |
| US5061470A (en) | 1990-08-03 | 1991-10-29 | Ethyl Corporation | Silane production from hydridomagnesium chloride |
| JPH04130010A (ja) | 1990-09-20 | 1992-05-01 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
| JP2965094B2 (ja) * | 1991-06-28 | 1999-10-18 | キヤノン株式会社 | 堆積膜形成方法 |
| DE4239246C1 (de) * | 1992-11-21 | 1993-12-16 | Goldschmidt Ag Th | Verfahren zur Herstellung von SiH-Gruppen aufweisenden Organopolysiloxanen |
| DE4306106A1 (de) | 1993-02-27 | 1994-09-01 | Thomas Dipl Chem Lobreyer | Verfahren zur Herstellung von Silylgermanen |
| DE4313130C1 (de) | 1993-04-22 | 1994-05-26 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
| JPH08231949A (ja) * | 1995-02-22 | 1996-09-10 | Osaka Gas Co Ltd | 有機電界発光素子 |
| JPH09237927A (ja) * | 1995-12-26 | 1997-09-09 | Toshiba Corp | 半導体薄膜形成方法および太陽電池の製造方法 |
| US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
| DE19812587C1 (de) | 1998-03-23 | 1999-09-23 | Wolfgang Sundermeyer | Verfahren zur Hydrierung halogensubstituierter Siliziumverbindungen |
| JP2002246384A (ja) | 2001-02-21 | 2002-08-30 | Jsr Corp | シリコン酸化膜の形成方法および形成用組成物 |
| FR2827592B1 (fr) | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| KR100434698B1 (ko) * | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
| TWI231750B (en) | 2002-07-17 | 2005-05-01 | Delta Tooling Co Ltd | Seat structure |
| WO2005015609A2 (en) | 2003-06-13 | 2005-02-17 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn |
| US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| DE10337309A1 (de) | 2003-08-14 | 2005-03-10 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
| US7498015B1 (en) * | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
| US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| US7485691B1 (en) * | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
| JP5157441B2 (ja) | 2005-04-07 | 2013-03-06 | 東亞合成株式会社 | 六塩化二ケイ素の精製方法 |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| JP5888831B2 (ja) * | 2005-10-05 | 2016-03-22 | シン フィルム エレクトロニクス エーエスエー | 架橋済みポリマー及びその製造方法 |
| KR101014066B1 (ko) | 2005-11-23 | 2011-02-14 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법 |
| KR101014143B1 (ko) | 2005-11-23 | 2011-02-14 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법 |
| NO326254B1 (no) * | 2005-12-22 | 2008-10-27 | Sinvent As | Fremgangsmate for fremstilling av silan |
| JP2007254593A (ja) * | 2006-03-23 | 2007-10-04 | Jsr Corp | ゲルマニウムポリマー、その製造法およびゲルマニウム膜の形成方法 |
| KR101269201B1 (ko) * | 2006-06-30 | 2013-05-28 | 삼성전자주식회사 | 폐 루프 방식의 다중 안테나 시스템에서 데이터송/수신장치 및 방법 |
| DE102006034061A1 (de) | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
| CA2667999A1 (en) | 2006-09-29 | 2008-03-27 | Shin-Etsu Chemical Co., Ltd. | Method for purification of silicon, silicon, and solar cell |
| EP2069368A4 (en) * | 2006-10-06 | 2011-06-22 | Kovio Inc | SILICONE POLYMERS, METHOD FOR POLYMERIZING SILICON COMPOUNDS AND METHOD FOR FORMING THIN FILMS FROM SUCH SILICON POLYMERS |
| KR101506136B1 (ko) | 2006-10-24 | 2015-03-26 | 다우 코닝 코포레이션 | 네오펜타실란을 포함하는 조성물 및 이의 제조 방법 |
| DE102007007874A1 (de) | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
| DE102007013219A1 (de) | 2007-03-15 | 2008-09-18 | Rev Renewable Energy Ventures, Inc. | Plasmagestützte Synthese |
| ES2366597T3 (es) * | 2007-03-30 | 2011-10-21 | Spawnt Private S.À.R.L. | Hiudrogenación catalítica. |
| US8530589B2 (en) * | 2007-05-04 | 2013-09-10 | Kovio, Inc. | Print processing for patterned conductor, semiconductor and dielectric materials |
| JP4714198B2 (ja) * | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
| DE102007000841A1 (de) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Verfahren zur Herstellung von hochreinem Hexachlordisilan |
| DE102008025263B4 (de) | 2008-05-27 | 2015-08-06 | Spawnt Private S.À.R.L. | Verfahren zum Aufreinigen von metallurgischem Silicium |
| EP2300368B1 (de) | 2008-05-27 | 2014-10-08 | Spawnt Private S.à.r.l. | Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben |
| DE102008025260B4 (de) * | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung |
| DE102008025261B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung |
| DE102008036143A1 (de) | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| JP6117471B2 (ja) | 2008-09-17 | 2017-04-19 | ナガルジュナ ファーティライザーズ アンド ケミカルズ リミテッド | 第iii族ないし第v族典型元素のハロゲン化オリゴマーおよび/またはハロゲン化ポリマーの製造方法 |
| JP5206334B2 (ja) * | 2008-11-07 | 2013-06-12 | 東亞合成株式会社 | クロロポリシランの製造方法 |
| DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
| DE102009056437B4 (de) * | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
-
2009
- 2009-12-04 DE DE102009056731A patent/DE102009056731A1/de not_active Withdrawn
-
2010
- 2010-12-06 CA CA2782247A patent/CA2782247A1/en not_active Abandoned
- 2010-12-06 TW TW099142322A patent/TWI589527B/zh not_active IP Right Cessation
- 2010-12-06 US US13/512,999 patent/US9139702B2/en not_active Expired - Fee Related
- 2010-12-06 BR BR112012013500A patent/BR112012013500A2/pt not_active IP Right Cessation
- 2010-12-06 US US13/513,217 patent/US20120315392A1/en not_active Abandoned
- 2010-12-06 EP EP10787448A patent/EP2507169A1/de not_active Withdrawn
- 2010-12-06 TW TW099142326A patent/TW201139283A/zh unknown
- 2010-12-06 WO PCT/EP2010/068993 patent/WO2011067416A1/de not_active Ceased
- 2010-12-06 US US13/513,018 patent/US9040009B2/en not_active Expired - Fee Related
- 2010-12-06 WO PCT/EP2010/068995 patent/WO2011067418A1/de not_active Ceased
- 2010-12-06 WO PCT/EP2010/068994 patent/WO2011067417A1/de not_active Ceased
- 2010-12-06 EP EP10787124.6A patent/EP2507296B1/de not_active Revoked
- 2010-12-06 US US13/513,036 patent/US20130004666A1/en not_active Abandoned
- 2010-12-06 CA CA2782226A patent/CA2782226A1/en not_active Abandoned
- 2010-12-06 JP JP2012541537A patent/JP5731531B2/ja not_active Expired - Fee Related
- 2010-12-06 US US13/513,611 patent/US9458294B2/en not_active Expired - Fee Related
- 2010-12-06 WO PCT/EP2010/068986 patent/WO2011067413A2/de not_active Ceased
- 2010-12-06 JP JP2012541533A patent/JP6297778B2/ja not_active Expired - Fee Related
- 2010-12-06 CN CN2010800551644A patent/CN102639644A/zh active Pending
- 2010-12-06 EP EP10787451A patent/EP2507299A2/de not_active Withdrawn
- 2010-12-06 EP EP10788316A patent/EP2507171A1/de not_active Withdrawn
- 2010-12-06 JP JP2012541535A patent/JP2013512842A/ja active Pending
- 2010-12-06 CN CN201080055163.XA patent/CN102639609B/zh not_active Expired - Fee Related
- 2010-12-06 JP JP2012541539A patent/JP2013512845A/ja active Pending
- 2010-12-06 TW TW099142328A patent/TWI580710B/zh not_active IP Right Cessation
- 2010-12-06 WO PCT/EP2010/068974 patent/WO2011067410A1/de not_active Ceased
- 2010-12-06 TW TW099142323A patent/TWI561559B/zh not_active IP Right Cessation
- 2010-12-06 EP EP10792879.8A patent/EP2507172B1/de not_active Not-in-force
- 2010-12-06 CN CN201080054817.7A patent/CN102666381B/zh not_active Expired - Fee Related
- 2010-12-06 TW TW099142324A patent/TW201134764A/zh unknown
- 2010-12-06 BR BR112012014106A patent/BR112012014106A2/pt not_active IP Right Cessation
- 2010-12-06 EP EP10787123A patent/EP2507317A1/de not_active Withdrawn
- 2010-12-06 EP EP10793199.0A patent/EP2507174B1/de not_active Revoked
- 2010-12-06 WO PCT/EP2010/068979 patent/WO2011067411A1/de not_active Ceased
- 2010-12-06 US US13/513,384 patent/US20120321540A1/en not_active Abandoned
- 2010-12-06 WO PCT/EP2010/068991 patent/WO2011067415A1/de not_active Ceased
- 2010-12-06 US US13/512,760 patent/US20130043429A1/en not_active Abandoned
- 2010-12-06 JP JP2012541538A patent/JP2013512844A/ja not_active Ceased
- 2010-12-06 TW TW099142320A patent/TW201132587A/zh unknown
- 2010-12-06 TW TW099142321A patent/TW201132708A/zh unknown
-
2016
- 2016-04-28 JP JP2016090381A patent/JP2016179935A/ja active Pending
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5731531B2 (ja) | 反応速度論的に安定した塩素化ポリシラン、この製造及び使用 | |
| RU2502555C2 (ru) | Галогенированный полисилан и плазмохимический способ его получения | |
| KR101659098B1 (ko) | 할로겐화 폴리실란 및 그 열적 제조방법 | |
| JP5739445B2 (ja) | ヘキサクロロジシランの生成方法 | |
| KR101569594B1 (ko) | 중간 사슬 길이의 폴리실란 및 그 제조방법 | |
| US20120313037A1 (en) | Chloride-containing silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131206 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7426 Effective date: 20131212 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20131212 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140616 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140709 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141008 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141016 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141211 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150121 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150220 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150318 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150409 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5731531 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |