TW586201B - Semiconductor device and the manufacturing method thereof - Google Patents

Semiconductor device and the manufacturing method thereof Download PDF

Info

Publication number
TW586201B
TW586201B TW91110661A TW91110661A TW586201B TW 586201 B TW586201 B TW 586201B TW 91110661 A TW91110661 A TW 91110661A TW 91110661 A TW91110661 A TW 91110661A TW 586201 B TW586201 B TW 586201B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
main surface
semiconductor
wiring substrate
electrodes
Prior art date
Application number
TW91110661A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshiyuki Kado
Takahiro Naito
Toshihiko Sato
Hikaru Ikegami
Takafumi Kikuchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW586201B publication Critical patent/TW586201B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/271—Configurations of stacked chips the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW91110661A 2001-06-07 2002-05-21 Semiconductor device and the manufacturing method thereof TW586201B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001172503 2001-06-07

Publications (1)

Publication Number Publication Date
TW586201B true TW586201B (en) 2004-05-01

Family

ID=19014112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91110661A TW586201B (en) 2001-06-07 2002-05-21 Semiconductor device and the manufacturing method thereof

Country Status (7)

Country Link
US (9) US7042073B2 (enExample)
EP (1) EP1401020A4 (enExample)
JP (3) JP4149377B2 (enExample)
KR (1) KR100868419B1 (enExample)
CN (2) CN101303984B (enExample)
TW (1) TW586201B (enExample)
WO (1) WO2002103793A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728445B2 (en) 2005-03-16 2010-06-01 Yamaha Corporation Semiconductor device production method and semiconductor device

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002103793A1 (en) 2001-06-07 2002-12-27 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
EP2565924B1 (en) * 2001-07-24 2018-01-10 Samsung Electronics Co., Ltd. Transfer method
US6979904B2 (en) * 2002-04-19 2005-12-27 Micron Technology, Inc. Integrated circuit package having reduced interconnects
US7057269B2 (en) * 2002-10-08 2006-06-06 Chippac, Inc. Semiconductor multi-package module having inverted land grid array (LGA) package stacked over ball grid array (BGA) package
JP3844467B2 (ja) * 2003-01-08 2006-11-15 沖電気工業株式会社 半導体装置及びその製造方法
JP4068974B2 (ja) * 2003-01-22 2008-03-26 株式会社ルネサステクノロジ 半導体装置
JP4149289B2 (ja) 2003-03-12 2008-09-10 株式会社ルネサステクノロジ 半導体装置
JP4484444B2 (ja) * 2003-04-11 2010-06-16 三洋電機株式会社 回路装置の製造方法
US7371607B2 (en) * 2003-05-02 2008-05-13 Seiko Epson Corporation Method of manufacturing semiconductor device and method of manufacturing electronic device
US7920723B2 (en) * 2005-11-18 2011-04-05 Tessera Technologies Ireland Limited Two stage detection for photographic eye artifacts
JP4398225B2 (ja) * 2003-11-06 2010-01-13 株式会社ルネサステクノロジ 半導体装置
JP4580730B2 (ja) 2003-11-28 2010-11-17 ルネサスエレクトロニクス株式会社 オフセット接合型マルチチップ半導体装置
DE102004013681B3 (de) * 2004-03-18 2005-11-17 Infineon Technologies Ag Halbleitermodul mit einem Kopplungssubstrat und Verfahren zur Herstellung desselben
JP4538830B2 (ja) 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置
CN1998077B (zh) * 2004-05-20 2010-06-16 斯班逊有限公司 半导体装置的制造方法及半导体装置
JP4592333B2 (ja) * 2004-05-31 2010-12-01 三洋電機株式会社 回路装置およびその製造方法
JP4601365B2 (ja) 2004-09-21 2010-12-22 ルネサスエレクトロニクス株式会社 半導体装置
US7332801B2 (en) * 2004-09-30 2008-02-19 Intel Corporation Electronic device
KR100843137B1 (ko) * 2004-12-27 2008-07-02 삼성전자주식회사 반도체 소자 패키지
JP2006216911A (ja) * 2005-02-07 2006-08-17 Renesas Technology Corp 半導体装置およびカプセル型半導体パッケージ
US20060214284A1 (en) * 2005-03-24 2006-09-28 Stuart Haden Apparatus and method for data capture
JP4817892B2 (ja) * 2005-06-28 2011-11-16 富士通セミコンダクター株式会社 半導体装置
JP4750523B2 (ja) * 2005-09-27 2011-08-17 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP2007103423A (ja) * 2005-09-30 2007-04-19 Renesas Technology Corp 半導体装置及びその製造方法
US7806731B2 (en) * 2005-12-29 2010-10-05 Sandisk Corporation Rounded contact fingers on substrate/PCB for crack prevention
US7592699B2 (en) * 2005-12-29 2009-09-22 Sandisk Corporation Hidden plating traces
JP2007227558A (ja) * 2006-02-22 2007-09-06 Nec Electronics Corp 半導体装置の製造装置及び半導体装置の製造方法
US8623737B2 (en) * 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
JP2007335581A (ja) * 2006-06-14 2007-12-27 Renesas Technology Corp 半導体装置の製造方法
CN101449375B (zh) 2006-06-29 2012-01-18 英特尔公司 用于集成电路封装中的无导线连接的设备、系统和方法
JP2008091795A (ja) * 2006-10-04 2008-04-17 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
KR100887475B1 (ko) * 2007-02-26 2009-03-10 주식회사 네패스 반도체 패키지 및 그 제조방법
JP5205867B2 (ja) * 2007-08-27 2013-06-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5222509B2 (ja) * 2007-09-12 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置
EP2214204B1 (en) * 2007-10-17 2013-10-02 Panasonic Corporation Mounting structure
JP5353153B2 (ja) * 2007-11-09 2013-11-27 パナソニック株式会社 実装構造体
JP2008098679A (ja) * 2008-01-07 2008-04-24 Renesas Technology Corp 半導体装置
JP5287731B2 (ja) * 2008-02-22 2013-09-11 凸版印刷株式会社 トランスポンダ及び冊子体
JP5538682B2 (ja) * 2008-03-06 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2010034294A (ja) * 2008-07-29 2010-02-12 Nec Electronics Corp 半導体装置およびその設計方法
KR101003116B1 (ko) * 2008-08-08 2010-12-21 주식회사 하이닉스반도체 패드를 제어하는 반도체 메모리 장치 및 그 장치가 장착된 멀티칩 패키지
US7925949B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Embedded processor
US8022539B2 (en) * 2008-11-17 2011-09-20 Stats Chippac Ltd. Integrated circuit packaging system with increased connectivity and method of manufacture thereof
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
US8743561B2 (en) * 2009-08-26 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer-level molded structure for package assembly
JP5250524B2 (ja) * 2009-10-14 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US8749074B2 (en) 2009-11-30 2014-06-10 Micron Technology, Inc. Package including an interposer having at least one topological feature
US8399300B2 (en) * 2010-04-27 2013-03-19 Stats Chippac, Ltd. Semiconductor device and method of forming adjacent channel and DAM material around die attach area of substrate to control outward flow of underfill material
JP5587123B2 (ja) * 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101692955B1 (ko) 2010-10-06 2017-01-05 삼성전자 주식회사 반도체 패키지 및 그 제조 방법
CN102034721B (zh) 2010-11-05 2013-07-10 南通富士通微电子股份有限公司 芯片封装方法
CN102034720B (zh) * 2010-11-05 2013-05-15 南通富士通微电子股份有限公司 芯片封装方法
US8680932B2 (en) * 2011-02-07 2014-03-25 Nihon Dempa Kogyo Co., Ltd Oscillator
US8674483B2 (en) * 2011-06-27 2014-03-18 Marvell World Trade Ltd. Methods and arrangements relating to semiconductor packages including multi-memory dies
TWI455280B (zh) * 2011-07-19 2014-10-01 矽品精密工業股份有限公司 半導體封裝件
CN102254891A (zh) * 2011-08-01 2011-11-23 三星半导体(中国)研究开发有限公司 倒装芯片封装结构及其制造方法
US8597986B2 (en) * 2011-09-01 2013-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. System in package and method of fabricating same
US8779599B2 (en) * 2011-11-16 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Packages including active dies and dummy dies and methods for forming the same
US8871568B2 (en) * 2012-01-06 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Packages and method of forming the same
US9117790B2 (en) * 2012-06-25 2015-08-25 Marvell World Trade Ltd. Methods and arrangements relating to semiconductor packages including multi-memory dies
KR20140006587A (ko) 2012-07-06 2014-01-16 삼성전자주식회사 반도체 패키지
US9136213B2 (en) * 2012-08-02 2015-09-15 Infineon Technologies Ag Integrated system and method of making the integrated system
JP2014036179A (ja) * 2012-08-10 2014-02-24 Ps4 Luxco S A R L 半導体装置
CN104919586A (zh) * 2013-01-16 2015-09-16 株式会社村田制作所 模块及其制造方法
US9293404B2 (en) 2013-01-23 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pre-applying supporting materials between bonded package components
US20140264783A1 (en) * 2013-03-13 2014-09-18 Altera Corporation Apparatus for electronic assembly with improved interconnect and associated methods
US9627229B2 (en) * 2013-06-27 2017-04-18 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming trench and disposing semiconductor die over substrate to control outward flow of underfill material
JP6196092B2 (ja) * 2013-07-30 2017-09-13 ルネサスエレクトロニクス株式会社 半導体装置
TWI541954B (zh) * 2013-08-12 2016-07-11 矽品精密工業股份有限公司 半導體封裝件及其製法
JP6100648B2 (ja) * 2013-08-28 2017-03-22 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2015109408A (ja) * 2013-10-22 2015-06-11 マイクロン テクノロジー， インク． 複合チップ、半導体装置、及び半導体装置の製造方法
JP2015082547A (ja) 2013-10-22 2015-04-27 セイコーエプソン株式会社 回路モジュール及びその製造方法
US8912078B1 (en) * 2014-04-16 2014-12-16 Applied Materials, Inc. Dicing wafers having solder bumps on wafer backside
KR20160085171A (ko) * 2015-01-07 2016-07-15 삼성전자주식회사 반도체 장치와, 그를 포함하는 전자 장치 및 반도체 장치를 장착하는 방법
US9613931B2 (en) 2015-04-30 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out stacked system in package (SIP) having dummy dies and methods of making the same
JP6444269B2 (ja) * 2015-06-19 2018-12-26 新光電気工業株式会社 電子部品装置及びその製造方法
US10049953B2 (en) * 2015-09-21 2018-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing an integrated fan-out package having fan-out redistribution layer (RDL) to accommodate electrical connectors
US9917072B2 (en) 2015-09-21 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing an integrated stacked package with a fan-out redistribution layer (RDL) and a same encapsulating process
US9922964B1 (en) * 2016-09-19 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure with dummy die
KR102351428B1 (ko) 2017-09-29 2022-01-17 가부시키가이샤 아이신 회로 기판, 회로 기판의 설계 방법, 및 반도체 장치
JP7238481B2 (ja) 2019-03-05 2023-03-14 株式会社アイシン 半導体モジュール及び半導体装置
JP2020150145A (ja) * 2019-03-14 2020-09-17 キオクシア株式会社 半導体装置
US11164804B2 (en) 2019-07-23 2021-11-02 International Business Machines Corporation Integrated circuit (IC) device package lid attach utilizing nano particle metallic paste
JP7200899B2 (ja) * 2019-09-30 2023-01-10 三菱電機株式会社 半導体装置および半導体装置の製造方法
US11282716B2 (en) 2019-11-08 2022-03-22 International Business Machines Corporation Integration structure and planar joining
US11621245B2 (en) 2020-06-03 2023-04-04 Micron Technology, Inc. Microelectronic device packages with EMI shielding, methods of fabricating and related electronic systems
KR102877210B1 (ko) 2020-06-22 2025-10-28 삼성전자주식회사 반도체 패키지
US12165983B2 (en) * 2020-08-11 2024-12-10 Intel Corporation Stepped electronic substrate for integrated circuit packages
CN112188728B (zh) * 2020-09-17 2021-09-07 西安交通大学 一种基于倒装芯片的温度压力集成传感器及其封装方法
CN112490182B (zh) * 2020-11-25 2024-07-05 通富微电子股份有限公司 多芯片封装方法
WO2022168197A1 (ja) * 2021-02-03 2022-08-11 キオクシア株式会社 半導体記憶装置
CN115918270A (zh) * 2021-06-18 2023-04-04 庆鼎精密电子（淮安）有限公司 电路板组件及其制作方法
US11729915B1 (en) * 2022-03-22 2023-08-15 Tactotek Oy Method for manufacturing a number of electrical nodes, electrical node module, electrical node, and multilayer structure

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6423562A (en) * 1987-07-20 1989-01-26 Nippon Telegraph & Telephone Semiconductor device
JP2585799B2 (ja) * 1989-06-30 1997-02-26 株式会社東芝 半導体メモリ装置及びそのバーンイン方法
JPH04302164A (ja) 1991-03-29 1992-10-26 Fujitsu Ltd 半導体装置
US5310965A (en) * 1991-08-28 1994-05-10 Nec Corporation Multi-level wiring structure having an organic interlayer insulating film
JPH05226793A (ja) * 1992-02-18 1993-09-03 Ibiden Co Ltd プリント配線板
JPH06224561A (ja) * 1993-01-25 1994-08-12 Ibiden Co Ltd 放熱構造プリント配線板及びその製造方法
US5656945A (en) * 1993-05-12 1997-08-12 Tribotech Apparatus for testing a nonpackaged die
JP3242765B2 (ja) 1993-09-09 2001-12-25 富士通株式会社 半導体装置及びその製造方法
JPH07115151A (ja) * 1993-10-14 1995-05-02 Toshiba Corp 半導体装置及びその製造方法
JP3085622B2 (ja) * 1993-10-28 2000-09-11 京セラ株式会社 電子素子搭載用基板の製造方法
CN1117395C (zh) * 1994-03-18 2003-08-06 日立化成工业株式会社 半导体组件的制造方法及半导体组件
JP2571024B2 (ja) 1994-09-28 1997-01-16 日本電気株式会社 マルチチップモジュール
JPH08153819A (ja) * 1994-11-29 1996-06-11 Citizen Watch Co Ltd ボールグリッドアレイ型半導体パッケージの製造方法
KR100290993B1 (ko) * 1995-06-13 2001-08-07 이사오 우치가사키 반도체장치,반도체탑재용배선기판및반도체장치의제조방법
US7166495B2 (en) * 1996-02-20 2007-01-23 Micron Technology, Inc. Method of fabricating a multi-die semiconductor package assembly
JP4026188B2 (ja) * 1996-02-27 2007-12-26 イビデン株式会社 プリント配線板
JP2891665B2 (ja) * 1996-03-22 1999-05-17 株式会社日立製作所 半導体集積回路装置およびその製造方法
US5783866A (en) * 1996-05-17 1998-07-21 National Semiconductor Corporation Low cost ball grid array device and method of manufacture thereof
DE69830883T2 (de) * 1997-03-10 2006-04-20 Seiko Epson Corp. Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte
JP2976917B2 (ja) * 1997-03-31 1999-11-10 日本電気株式会社 半導体装置
JPH10303334A (ja) * 1997-04-28 1998-11-13 Sumitomo Kinzoku Electro Device:Kk プラスチック配線基板
JPH1154658A (ja) * 1997-07-30 1999-02-26 Hitachi Ltd 半導体装置及びその製造方法並びにフレーム構造体
JPH11121897A (ja) * 1997-10-14 1999-04-30 Fujitsu Ltd 複数の回路素子を基板上に搭載するプリント配線基板の製造方法及びプリント配線基板の構造
US6016256A (en) 1997-11-14 2000-01-18 The Panda Project Multi-chip module having interconnect dies
JPH11168185A (ja) * 1997-12-03 1999-06-22 Rohm Co Ltd 積層基板体および半導体装置
JP3481444B2 (ja) 1998-01-14 2003-12-22 シャープ株式会社 半導体装置及びその製造方法
JP3269025B2 (ja) * 1998-04-16 2002-03-25 三洋電機株式会社 半導体装置とその製造方法
US6479887B1 (en) * 1998-08-31 2002-11-12 Amkor Technology, Inc. Circuit pattern tape for wafer-scale production of chip size semiconductor packages
US6281568B1 (en) * 1998-10-21 2001-08-28 Amkor Technology, Inc. Plastic integrated circuit device package and leadframe having partially undercut leads and die pad
US6100564A (en) * 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution
JP3472492B2 (ja) * 1998-11-25 2003-12-02 京セラ株式会社 多数個取り配線基板
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Ｉｃパッケージの製造方法
JP3512657B2 (ja) * 1998-12-22 2004-03-31 シャープ株式会社 半導体装置
JP2000243900A (ja) * 1999-02-23 2000-09-08 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置、ならびに半導体チップの製造方法
JP4809957B2 (ja) * 1999-02-24 2011-11-09 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
JP3255895B2 (ja) * 1999-09-20 2002-02-12 ローム株式会社 半導体装置
JP2000294669A (ja) * 1999-04-05 2000-10-20 Hitachi Ltd 配線基板およびそれを用いた半導体装置の製造方法ならびに半導体装置
JP3565319B2 (ja) 1999-04-14 2004-09-15 シャープ株式会社 半導体装置及びその製造方法
US6329228B1 (en) * 1999-04-28 2001-12-11 Citizen Watch Co., Ltd. Semiconductor device and method of fabricating the same
JP3718370B2 (ja) 1999-05-19 2005-11-24 ローム株式会社 マルチチップ型半導体装置
JP2001102486A (ja) * 1999-07-28 2001-04-13 Seiko Epson Corp 半導体装置用基板、半導体チップ搭載基板、半導体装置及びその製造方法、回路基板並びに電子機器
JP3339473B2 (ja) * 1999-08-26 2002-10-28 日本電気株式会社 パッケージ基板、該パッケージ基板を備える半導体装置及びそれらの製造方法
JP2001056346A (ja) 1999-08-19 2001-02-27 Fujitsu Ltd プローブカード及び複数の半導体装置が形成されたウエハの試験方法
JP3827497B2 (ja) * 1999-11-29 2006-09-27 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2001160597A (ja) * 1999-11-30 2001-06-12 Nec Corp 半導体装置、配線基板及び半導体装置の製造方法
JP2001274316A (ja) * 2000-03-23 2001-10-05 Hitachi Ltd 半導体装置及びその製造方法
JP2002016181A (ja) * 2000-04-25 2002-01-18 Torex Semiconductor Ltd 半導体装置、その製造方法、及び電着フレーム
JP2001320014A (ja) * 2000-05-11 2001-11-16 Seiko Epson Corp 半導体装置及びその製造方法
JP3916854B2 (ja) * 2000-06-28 2007-05-23 シャープ株式会社 配線基板、半導体装置およびパッケージスタック半導体装置
JP2002026236A (ja) 2000-07-05 2002-01-25 Canon Inc 半導体素子の実装構造およびその実装方法
JP3581086B2 (ja) * 2000-09-07 2004-10-27 松下電器産業株式会社 半導体装置
US6885106B1 (en) * 2001-01-11 2005-04-26 Tessera, Inc. Stacked microelectronic assemblies and methods of making same
JP2002222914A (ja) * 2001-01-26 2002-08-09 Sony Corp 半導体装置及びその製造方法
US6763486B2 (en) * 2001-05-09 2004-07-13 Agilent Technologies, Inc. Method and apparatus of boundary scan testing for AC-coupled differential data paths
WO2002103793A1 (en) * 2001-06-07 2002-12-27 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
JP4790157B2 (ja) * 2001-06-07 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
JP3831287B2 (ja) * 2002-04-08 2006-10-11 株式会社日立製作所 半導体装置の製造方法
JP3702961B2 (ja) * 2002-10-04 2005-10-05 東洋通信機株式会社 表面実装型ｓａｗデバイスの製造方法
JP4302164B2 (ja) 2006-12-15 2009-07-22 三洋電機株式会社 照明装置及び投写型映像表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728445B2 (en) 2005-03-16 2010-06-01 Yamaha Corporation Semiconductor device production method and semiconductor device

Also Published As

Publication number Publication date
US9613922B2 (en) 2017-04-04
US8278147B2 (en) 2012-10-02
US20110171780A1 (en) 2011-07-14
US20060189031A1 (en) 2006-08-24
KR100868419B1 (ko) 2008-11-11
KR20040023608A (ko) 2004-03-18
JP5420505B2 (ja) 2014-02-19
US20120264240A1 (en) 2012-10-18
US7531441B2 (en) 2009-05-12
JP4149377B2 (ja) 2008-09-10
JP5259560B2 (ja) 2013-08-07
US20140117541A1 (en) 2014-05-01
JP2011018935A (ja) 2011-01-27
JP2010050489A (ja) 2010-03-04
US8653655B2 (en) 2014-02-18
CN100407422C (zh) 2008-07-30
JPWO2002103793A1 (ja) 2004-10-07
US7042073B2 (en) 2006-05-09
WO2002103793A1 (en) 2002-12-27
EP1401020A1 (en) 2004-03-24
US8524534B2 (en) 2013-09-03
US8952527B2 (en) 2015-02-10
US7859095B2 (en) 2010-12-28
US20040164385A1 (en) 2004-08-26
CN101303984B (zh) 2012-02-15
US20150108639A1 (en) 2015-04-23
US20130320571A1 (en) 2013-12-05
US20100015760A1 (en) 2010-01-21
EP1401020A4 (en) 2007-12-19
CN1516898A (zh) 2004-07-28
US20090189268A1 (en) 2009-07-30
CN101303984A (zh) 2008-11-12

Similar Documents

Publication Publication Date Title
TW586201B (en) Semiconductor device and the manufacturing method thereof
TW558818B (en) Semiconductor device and its manufacturing method
TWI277187B (en) Semiconductor device and manufacturing method for the same
JP4805901B2 (ja) 半導体パッケージ
US20080237856A1 (en) Semiconductor Package and Method for Fabricating the Same
CN112670278B (zh) 一种芯片封装结构及芯片封装方法
TW432558B (en) Dual-chip packaging process and method for forming the package
CN103915405B (zh) 半导体器件和制造半导体器件的方法
CN100378972C (zh) 散热器及使用该散热器的封装体
TW201409589A (zh) 半導體裝置之製造方法
TW579560B (en) Semiconductor device and its manufacturing method
TW200421587A (en) Multi-chip module
JPH0855875A (ja) 半導体装置
JP2010010269A (ja) 半導体装置、半導体装置製造用中間体およびそれらの製造方法
CN101339942A (zh) 避免基板翘曲引起的焊接缺陷的半导体封装接合构造
CN111883437B (zh) 半导体封装方法及半导体封装结构
TW201836114A (zh) 無基板封裝結構
JP5297445B2 (ja) 半導体装置
JP2956480B2 (ja) Ｂｇａ型半導体装置
CN119181675A (zh) 半导体封装结构
TW432561B (en) Multi-chip module packaging structure
TWI345293B (en) Semiconductor package-on-package (pop) device avoiding crack at solder joints of micro-contacts during semiconductor stacking
JP2008091954A (ja) 半導体装置の製造方法
JP2008021712A (ja) 半導体モジュールならびにその製造方法
JP2008021710A (ja) 半導体モジュールならびにその製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent