CN102034720B - 芯片封装方法 - Google Patents

芯片封装方法 Download PDF

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CN102034720B
CN102034720B CN2010105343885A CN201010534388A CN102034720B CN 102034720 B CN102034720 B CN 102034720B CN 2010105343885 A CN2010105343885 A CN 2010105343885A CN 201010534388 A CN201010534388 A CN 201010534388A CN 102034720 B CN102034720 B CN 102034720B
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wafer
packaging method
protective layer
chip packaging
ball
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CN102034720A (zh
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石磊
高国华
陶玉娟
舜田直实
目黑弘一
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Tongfu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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Priority to US13/883,231 priority patent/US8883627B2/en
Priority to PCT/CN2011/080874 priority patent/WO2012059003A1/zh
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Abstract

本发明提供了一种芯片封装方法，包括步骤：提供半封装晶圆，所述半封装晶圆上具有切割道以及芯片的金属焊垫；在切割道上形成第一保护层；在金属焊垫上形成球下金属电极；在所述球下金属电极上形成焊球；沿所述切割道对晶圆进行划片。本发明所述的第一保护层能够使得切割道内的金属不被电镀析出，且在切割后能够保护分立芯片的侧面，工艺流程简单，提高了封装效率以及成品率。

Description

芯片封装方法
技术领域
本发明涉及半导体技术领域，尤其涉及一种晶圆级的芯片封装方法。
背景技术
晶圆级芯片尺寸封装(Wafer Level Chip Size Packaging，WLCSP)技术是对整片晶圆进行封装测试后再切割得到单个成品芯片的技术，封装后的芯片尺寸与裸片完全一致。晶圆级芯片尺寸封装技术彻底颠覆了传统封装如陶瓷无引线芯片载具(Ceramic Leadless Chip Carrier)、有机无引线芯片载具(Organic Leadless Chip Carrier)的模式，顺应了市场对微电子产品日益轻、小、短、薄化和低价化要求。经晶圆级芯片尺寸封装技术封装后的芯片尺寸达到了高度微型化，芯片成本随着芯片尺寸的减小和晶圆尺寸的增大而显著降低。晶圆级芯片尺寸封装技术是可以将IC设计、晶圆制造、封装测试、整合为一体的技术，是当前封装领域的热点和未来发展的趋势。
中国发明专利申请第200610096807.5号公开了一种基于晶圆级芯片尺寸的封装方法，主要包括如下工艺步骤：
首先如图1所示，将半导体晶圆1与同样尺寸的第一玻璃基板2粘接，这样在封装的初始阶段，所述晶圆表面的器件部分将被基板盖住保护，减少了外界的污染和损害。
如图2所示，对半导体晶圆1相对于第一玻璃基板2的背面进行减薄，并利用光刻技术以及等离子刻蚀对所述晶圆背面进行选择性刻蚀，形成多个V形沟槽作为切割道，并暴露出部分芯片焊垫11(即芯片电极)。
如图3所示，用绝缘介质填充所述V形沟槽，并在所述晶圆背面压合第二玻璃基板3以及焊料掩模4。所述第二玻璃基板3用于支撑半导体晶圆1，而电热绝缘焊料4则用于在后续的机械切割工艺中起机械缓冲保护半导体晶圆1的作用。
如图4所示，采用机械切割工艺半切割原V形沟槽所在位置(不穿透分离芯片)，形成新的V形沟槽作为晶圆的切割道，且使得芯片焊垫11从V形沟槽的侧面暴露。
如图5所示，然后采用电镀工艺制作外引线12，所述外引线12一端在V形沟槽内与芯片焊垫11连接，另一端延伸至晶圆背面，所述芯片焊垫11的电性功能通过外引线12而延伸至晶圆背面。
如图6所示，在晶圆背面选择性形成绝缘保护层14，露出部分外引线12，在露出的外引线12上制作焊接凸点15，将上述晶圆沿其背面的V形沟槽切割划片，形成分立芯片，然后再对分立芯片进行外壳的封装，最终完成芯片的封装工艺。
现有的晶圆级芯片封装方法存在如下问题：在采用电镀工艺制作外引线12时，切割道内(例如上述专利所述的V形沟槽内)的金属也容易电镀析出而导致各连线之间发生短路。此外在切割后，分立芯片的侧面也即原V形沟槽的侧壁，暴露于外界环境中，在进行外壳封装时容易受到损伤，导致外引线断路，进而影响芯片的成品率。
发明内容
本发明解决的技术问题是提供一种芯片封装方法，可以提高封装效率以及成品率。
本发明提供的芯片封装方法，包括步骤：
提供半封装晶圆，所述半封装晶圆上具有切割道以及芯片的金属焊垫；
在所述金属焊垫上形成球下金属电极；
在所述球下金属电极上形成焊球；
沿切割道对晶圆进行划片；
还包括在切割道上方形成第一保护层的步骤。
优选的，所述第一保护层的宽度大于切割道的宽度。所述切割道的宽度为30～80um，所述第一保护层的宽度为50～120um。
可选的，所述第一保护层为热固性环氧树脂，采用丝网印刷技术形成。
可选的，所述形成球下金属电极的方法为无电解电镀。所述无电解电镀包括：对晶圆表面先进行锌酸盐清洗处理，再无电解电镀镍，然后无电解电镀金，电镀厚度分别为3um以及0.05um。
可选的，所述形成球下金属电极的方法为选择性气相沉积。
所述选择性气相沉积包括：在晶圆表面设置掩模板，所述掩模板露出晶圆上需形成球下金属电极的位置；采用物理气相沉积工艺，依次沉积镍金属以及铜金属。
优选的，在形成球下金属电极后，还包括采用丝网印刷技术在晶圆上、球下金属电极以外区域形成第二保护层的步骤。所述第二保护层的厚度为5um～50um。
可选的，所述第二保护层的材质为热固性树脂，采用丝网印刷技术形成。
所述丝网印刷时，保持晶圆的温度低于所述热固性环氧树脂的固化温度。所述形成第二保护层后，还包括采用等离子刻蚀去除覆于球下金属电极顶部表面的热固性环氧树脂的步骤。
可选的，所述形成第二保护层后，还包括研磨晶圆表面的步骤。
所述研磨采用机械研磨，具体包括：将晶圆放置于固定工作台；将柔软度小于晶圆的非织造布缠绕于研磨盘上，并紧贴晶圆表面；然后使用研磨液浸润所述非织造布，进行机械研磨。
优选的，所述热固性树脂的固化温度小于200℃。
所述热固性树脂中包含固化填充剂，所述固化填充剂的颗粒直径小于环氧树脂印刷厚度的1/3。
优选的，所述热固性树脂的印刷厚度为15um，固化填充剂的颗粒直径小于5um，固化后形成的第二保护层平均厚度为11um～12um。
优选的，在进行丝网印刷技术时，先对晶圆进行烘烤处理或者进行表面活性化的等离子处理。
本发明所述封装方法利用丝网印刷技术在切割道上形成第一保护层，具体的可以选择热固性环氧树脂作为保护层材料，一方面在采用电镀工艺形成球下金属电极时，能够防止切割道内的金属被电镀析出；另一方面在划片后，能够保护分立芯片的侧面，尤其是金属引线，不受到损伤。本发明工艺流程简单，成本低廉，且提高了封装效率以及封装成品率。
附图说明
通过附图中所示的本发明的优选实施例的更具体说明，本发明的上述及其他目的、特征和优势将更加清晰。附图中与现有技术相同的部件使用了相同的附图标记。附图并未按比例绘制，重点在于示出本发明的主旨。在附图中为清楚起见，放大了层和区域的尺寸。
图1至图6为现有的一种晶圆级的芯片封装方法各步骤剖面示意图；
图7为本发明所述封装方法的基本流程图；
图8为本发明第一实施例的流程示意图；
图9、图11、图13、图14、图15、图16为图8所示部分步骤的示意图；
图10为图9的俯视示意图；
图12为图11的俯视示意图；
图17为本发明第二实施例的流程示意图；
图18至图20为图17所示部分步骤的示意图；
图21为本发明第三实施例的流程示意图；
图22以及图23为图21所示部分步骤的示意图。
具体实施方式
现有的晶圆级芯片封装方法，切割道内的金属容易在球下金属电极制作时电镀析出而导致短路，且晶圆在划片后，分立芯片的侧面暴露于外界环境中容易受到损伤。本发明则采用丝网印刷技术在切割道上形成第一保护层以解决上述问题。下面结合附图对本发明进行具体说明。
本实施例提供的封装方法的基本流程示意图如图7所示，包括：
S101、提供半封装晶圆。具体的，所述半封装晶圆包括：形成有芯片的半导体衬底、将晶圆划分成若干个独立芯片单元的切割道、位于半导体衬底上起到绝缘保护作用且具有若干开口的保护掩模、开口内曝露出芯片的金属焊垫。所述保护掩模可以是聚酰亚胺等有机膜，所述金属焊垫可以是铜、铝等常规的互连金属。
S102、在切割道上形成第一保护层，具体的，可以采用丝网印刷技术在切割道上印刷所述第一保护层。
优选的，所述第一保护层的宽度要大于切割道宽度，使得划片后，分立芯片的侧面顶部边缘处也受到保护。为降低工艺难度，所述第一保护层可以采用热固性树脂，例如环氧树脂、酚醛树脂、脲醛树脂、三聚氰胺-甲醛树脂、不饱和树脂、聚氨酯、聚酰亚胺等。
S103、在所述金属焊垫上形成球下金属电极；
可以采用电镀或选择性气相沉积的方式在所述保护掩模开口内、金属焊垫上形成所述球下金属电极。其中，可以采用无电解电镀以提高电镀的均匀性；而采用选择性气相沉积，则可以反复利用同一块金属掩模板以降低成本。常见的球下金属电极材料包括镍、金、铜、铝、钛、钨、铬或其合金、组合等，可以根据球下金属电极的实际厚度尺寸限制选择相应材料，以满足工艺以及成本需求。
为了进一步改善对晶圆的保护效果，提高封装的成品率，在形成球下金属电极后，还可以在晶圆上采用丝网印刷技术形成第二保护层，所述第二保护层可以选用与第一层保护层相同的热固性树脂材料。通过调整丝网印刷所采用的丝网版的开口区域，可以选择所述第二保护层的具体形成位置。在形成第二层保护层后，通常还应当利用等离子刻蚀去除丝网印刷时，因热固性树脂的流动性而覆于球下金属电极顶部表面的部分第二保护层，并采用研磨工艺处理晶圆的表面。以暴露出球下金属电极顶部，便于后续工艺进行焊球的制作。
S104、在所述球下金属电极上形成焊球。可以在球下金属电极的顶部先涂覆焊料，然后进行高温的回流，形成所述焊球。常见的焊料包括锡、铅、银、铜、锌等金属或其合金、组合等。
S105、沿所述切割道对晶圆进行划片，形成分立的芯片。
通常采用宽度小于切割道的刀片进行机械切割，还可以采用激光切割。切割后的分立芯片侧面以及顶部边缘均覆有第一保护层，能够在后续封装过程中，保护该处的金属布线避免受到损伤。最后进行芯片外壳的封装完成本发明所述芯片封装工艺。
为进一步阐述本发明之优点，以下结合说明书附图提供了本发明的三个具体实施例。
第一实施例
图8为本发明第一实施例的流程示意图，而图9至图16为上述流程中各步骤的示意图，以下结合图8对各步骤进行详细说明。
如图9所示，提供半封装晶圆10，所述半封装晶圆包括：形成有芯片的半导体衬底100、将晶圆划分成若干个独立芯片单元的切割道200、位于所述半导体衬底100上具有开口的保护掩模101、所述开口内曝露出芯片的金属焊垫102。所述保护掩模101可以是聚酰亚胺等有机膜，所述金属焊垫102可以是铜、铝等常规的互连金属。
需要指出的是，上述半导体衬底100并非局限于单质硅或绝缘体上硅衬底，还应当包括制作于其上的半导体器件、金属互连以及其他半导体结构。所述保护掩模101即覆于上述半导体结构的表面，从而起到保护芯片的作用。所述芯片的金属焊垫102作为芯片的输入/输出端的电极，用于引出芯片的电性功能。
图10为上述半封装晶圆的俯视示意图，可见所述晶圆上形成有格子状的切割道200，上述切割道200将晶圆划分成若干方片区域，每个方片区域代表一块独立的芯片。所述切割道200的截面形状可以为等腰梯形，深度不宜过深以免影响晶圆的钢型硬度。本实施例中，所述切割道200的开口宽度为30～80um。
图11为半封装晶圆的剖面示意图，图12为图11的俯视示意图，结合图11以及图12所示，将上述半封装晶圆表面进行丝网印刷工艺，在切割道200的上方形成第一保护层301。其中，所述第一保护层301如前例举的热固性树脂，本实施例中，出于降低成本的考量，第一保护层301优选热固性环氧树脂。通过调整丝网印刷所使用的丝网版的开口，可以选择第一保护层301的形成位置。
具体的，丝网印刷的工艺示意图如图13所示，包括：将晶圆10固定于印刷装置中，丝网版20的底部，在丝网版20上涂抹液态的环氧树脂；用刮刀30按压丝网版20以及晶圆10，使得液态的环氧树脂通过丝网版20的开孔处涂布至晶圆10表面；将丝网版20从晶圆10上揭下，这样液态的环氧树脂便转录至晶圆10上，形成所需图案。
本步骤中，上述丝网版20的开孔对准晶圆10上的切割道200，液态环氧树脂渗入晶圆10后，将填充于切割道200内，加热所述晶圆10至固化温度，使得所述液态的环氧树脂固化以形成第一保护层301。此外为了使得第一保护层301的宽度大于切割道200的宽度，仅需使得丝网版20的开孔宽度大于切割道200的宽度即可，本实施例中所述第一保护层301的宽度设置为50～120um。
如图14所示，采用无电解电镀，以第一保护层301以及保护掩模101作为电镀掩模，在所述保护掩模101的开口内，金属焊垫102表面形成球下金属电极103。
具体的，在本实施例中，电镀前先对金属焊垫102进行锌酸盐处理，去除其表面的氧化膜，以降低接触电阻；然后在金属焊垫102上依次进行无电解镍电镀以及无电解金电镀，电镀厚度分别为3um以及0.05um，最终形成凸出于保护掩模101表面的球下金属电极103。
如图15所示，在球下金属电极103的顶部，采用焊料回流工艺制作焊球104。本实施例中，出于降低成本的考量，采用锡作为焊料材质。具体包括：将焊料锡膏涂覆于球下金属电极103上，然后进行高温回流，使得所述焊料锡膏转变成焊球104。通常为了保持晶圆其他部分表面的平整性以及加强绝缘保护，还会在焊球104以外的晶圆表面进行底部填充工艺。
如图16所示，在完成焊球制作工艺后，沿切割道200对晶圆10进行划片，形成分立的芯片。具体的，采用宽度小于第一保护层301的划片刀对晶圆10机械切割，这样在切割后，分立芯片的侧面以及边缘顶部覆有连续的第一保护层301，位于上述位置的金属引线或其他半导体结构均能够得到有效的保护。
第二实施例
图17为本发明第二实施例的流程示意图，而图18至图20为上述流程中部分步骤的示意图，以下结合图17对各步骤进行详细说明。
参照图17，本实施例的基本步骤包括：提供半封装晶圆；采用丝网印刷技术在切割道上印刷第一保护层；采用无电解电镀在金属焊垫上形成球下金属电极；在晶圆表面、球下金属电极以外区域形成第二保护层；对晶圆表面进行研磨以及等离子刻蚀工艺处理；在球下金属电极上形成焊球；沿切割道对晶圆划片。
与图8相比，本实施例与第一实施例相比，区别仅在于：在无电解电镀形成球下金属电极后，还包括在晶圆表面球下金属电极以外区域形成第二保护层以及进行相关工艺的步骤。所述第二保护层能够进一步保护晶圆10，并在后续焊球制作工艺中，不用进行底部填充，简化了工艺流程，同时如果采用深色树脂(环氧树脂即典型的深色树脂)，还可以防止因外界光照引发光电效应产生的芯片电路故障。
如图18所示，以第一实施例中图14所示的半封装晶圆结构为基础，采用丝网印刷技术在晶圆10上形成第二保护层302。
具体的，为降低工艺成本，所述第二保护层302可以选用与第一保护层301相同的材料，例如热固性环氧树脂。但与填充于切割沟道200内的第一保护层301不同的是，所述第二保护层302为薄膜结构，所需厚度仅为5um～50um。为了保证第二保护层302的薄膜均匀性，需要在丝网印刷的过程中保持热固性环氧树脂的流动性，即保证晶圆10的温度低于热固性环氧树脂的固化温度。
所述丝网印刷的具体工艺可以参考图13形成第一保护层301的图示，可选的，变更丝网版20的图案，使得液态的热固性环氧树脂涂布至晶圆10上、球下金属电极103以外的区域，然后加热固化形成所需的第二保护层302。
本实施例中，为降低工艺难度，所述环氧树脂的固化温度小于200℃。为了改善环氧树脂的固化性能，通常环氧树脂中还包含固化填充剂，例如含有二氧化硅或其他固体颗粒的填充剂。所述填充剂颗粒直径应当小于印刷厚度的1/3，以实现薄膜印刷的均匀性以及平整度需求，从而减少晶圆10表面的翘曲。所述印刷厚度通过调节丝网版20的乳剂厚度进行控制。本实施例中，进行丝网印刷时，液态的环氧树脂的印刷厚度为15um，而填充剂颗粒直径最大不得超过5um，环氧树脂固化后形成的第二保护层302的平均厚度可以控制在11um～12um。
在丝网印刷过程中，由于液态环氧树脂具有流动性，依然难免会渗入球下金属电极103区域。这样会存在如下问题：当在球下金属电极103顶部制作焊球时，所述位于球下金属电极103顶部表面的环氧树脂将使得焊球与球下金属电极103的接触面积减小，从而阻碍焊球与球下金属电极103的结合，甚至可能在封装后的可靠性实验以及衬底跌落实验中导致焊球的脱落，产生不良影响。因此在形成第二保护层302后，通常需要利用研磨对晶圆10作表面处理，去除上述残渣。
所述研磨可以是机械或化学研磨等，如图19所示，本实施例中，所采用的具体的研磨工艺包括：将晶圆10放置于固定工作台；将柔软度小于晶圆的非织造布40缠绕于研磨盘50上，并紧贴晶圆10表面；然后使用研磨液浸润所述非织造布40，进行机械研磨，去除附着于晶圆10表面的残渣物质。
作为另一个可选方案，在研磨结束后，如图20所示，还可以进行等离子刻蚀工艺，进一步去除上述覆于球下金属电极103顶部表面的环氧树脂。上述等离子刻蚀工艺的刻蚀气体包含氧气，能够与固化的环氧树脂发生反应生成气体而除去。
在进行完上述工艺后，便进入焊球制作以及划片等后续工艺，与第一实施例相同，此处不再赘述。
第三实施例
图21为本发明第二实施例的流程示意图，而图22以及图23为上述流程中部分步骤的示意图，以下结合图21进行详细说明。
参照图21，本实施例基本步骤包括：提供半封装晶圆、采用丝网印刷技术在切割道上印刷第一保护层；采用选择性气相沉积在金属焊垫上形成球下金属电极；在晶圆表面、球下金属电极以外区域形成第二保护层；对晶圆表面进行研磨以及等离子刻蚀工艺处理；在球下金属电极上形成焊球；沿切割道对晶圆划片。
与图8以及图17相比较，本实施例与前述两实施例的区别在于：形成球下金属层的方法不同。具体的，采用选择性气相沉积在晶圆10上的预定位置处形成球下金属电极，代替无电解电镀。
如图22所示，以第一实施例中图11所示的半封装晶圆结构为基础，首先在晶圆10的表面设置掩模板60，所述掩模板60可以是金属掩模板，紧贴于晶圆10上，且上述掩模板60上形成有开口，所述掩模板60上的开口对准晶圆10表面保护掩模101的开口。
本实施例中，选用镍以及铜作为球下金属电极材料，如图23所示，将上述晶圆10以及掩模板60放置于沉积腔内，采用物理气相沉积工艺，依次进行镍金属以及铜金属的沉积，形成所需的球下金属电极103。由于掩模板60的存在，上述金属仅可能沉积于保护掩模101的开口内，也即预定的球下金属电极103形成位置，从而实现选择性气相沉积。上述掩模板60可以重复使用，与无电解电镀相比较，具有更为优异的经济性，且具有气相沉积所固有的沉积速度快，工艺流程短的优点。
后续工艺与前序实施例完全相同，此处不再赘述。
此外，在上述各实施例中，为了提高丝网印刷工艺中热固性树脂的附着力，通常在丝网印刷之前，还可以先对上述晶圆10的半成品进行烘烤处理，或者进行表面活性化的等离子处理。
本发明虽然已以较佳实施例公开如上，但其并不是用来限定本发明，任何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改，并对上述三实施例中具有差异的技术特征互相进行替换，因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰，均属于本发明技术方案的保护范围。

Claims (20)

1.一种芯片封装方法，其特征在于，包括步骤：
提供半封装晶圆，所述半封装晶圆包括：形成有芯片的半导体衬底切割道以及用于保护所述芯片的保护掩模，所述保护掩模覆于半导体衬底的表面且露出位于切割道处的半导体衬底，所述保护掩模具有开口，所述开口露出所述芯片的金属焊垫；
采用丝网印刷工艺在切割道上形成第一保护层，所述丝网印刷工艺所用的丝网版的开孔对准所述切割道，且所述开孔的宽度大于所述切割道的宽度；
在形成所述第一保护层之后，在所述金属焊垫上形成球下金属电极；
在所述球下金属电极上形成焊球；
沿切割道对晶圆进行划片。
2.如权利要求1所述的芯片封装方法，其特征在于，所述第一保护层的宽度大于切割道的宽度。
3.如权利要求2所述的芯片封装方法，其特征在于，所述切割道的宽度为30~80um，所述第一保护层的宽度为50~120um。
4.如权利要求1所述的芯片封装方法，其特征在于，所述第一保护层为热固性环氧树脂。
5.如权利要求1所述的芯片封装方法，其特征在于，所述形成球下金属电极的方法为无电解电镀。
6.如权利要求5所述的芯片封装方法，其特征在于，所述无电解电镀包括：对晶圆表面先进行锌酸盐清洗处理；在晶圆上无电解电镀镍，然后无电解电镀金。
7.如权利要求6所述的芯片封装方法，其特征在于，所述镍的电镀厚度为3um，金的电镀厚度为0.05um。
8.如权利要求1所述的芯片封装方法，其特征在于，所述形成球下金属电极的方法为选择性气相沉积。
9.如权利要求8所述的芯片封装方法，其特征在于，所述选择性气相沉积包括：
在晶圆表面设置掩模板，所述掩模板露出晶圆上需形成球下金属电极的位置；以所述掩模板为掩模，采用物理气相沉积工艺，在晶圆上依次沉积镍金属以及铜金属。
10.如权利要求1所述的芯片封装方法，其特征在于，在形成球下金属电极后，还包括采用在晶圆上、球下金属电极以外区域形成第二保护层的步骤。
11.如权利要求10所述的芯片封装方法，其特征在于，所述第二保护层的厚度为5um~50um。
12.如权利要求10所述的芯片封装方法，其特征在于，所述第二保护层的材质为热固性环氧树脂，采用丝网印刷技术形成。
13.如权利要求10所述的芯片封装方法，其特征在于，所述形成第二保护层后，还包括研磨晶圆表面的步骤。
14.如权利要求13所述的芯片封装方法，其特征在于，所述研磨采用机械研磨，具体包括：
将晶圆放置于固定工作台；
将柔软度小于晶圆的非织造布缠绕于研磨盘上，并紧贴晶圆表面；
使用研磨液浸润所述非织造布，进行机械研磨。
15.如权利要求12所述的芯片封装方法，其特征在于，所述形成第二保护层后，还包括采用等离子刻蚀去除覆于球下金属电极顶部表面的热固性环氧树脂的步骤。
16.如权利要求12所述的芯片封装方法，其特征在于，所述丝网印刷时，保持晶圆的温度低于所述热固性环氧树脂的固化温度。
17.如权利要求12所述的芯片封装方法，其特征在于，所述热固性环氧树脂的固化温度小于200℃。
18.如权利要求17所述的芯片封装方法，其特征在于，所述热固性环氧树脂中包含固化填充剂，所述固化填充剂的颗粒直径小于环氧树脂印刷厚度的1/3。
19.如权利要求18所述的芯片封装方法，其特征在于，所述热固性环氧树脂的印刷厚度为15um，固化填充剂的颗粒直径小于5um，固化后形成的第二保护层平均厚度为11um~12um。
20.如权利要求4或12任意所述的芯片封装方法，其特征在于，在进行丝网印刷技术时，先对晶圆进行烘烤处理或者进行表面活性化的等离子处理。
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Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288

Patentee after: Tongfu Microelectronics Co., Ltd.

Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288

Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong