TWI732924B - 研磨元件、研磨輪及使用所述研磨輪製造半導體封裝的方法 - Google Patents

研磨元件、研磨輪及使用所述研磨輪製造半導體封裝的方法 Download PDF

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TWI732924B
TWI732924B TW106128215A TW106128215A TWI732924B TW I732924 B TWI732924 B TW I732924B TW 106128215 A TW106128215 A TW 106128215A TW 106128215 A TW106128215 A TW 106128215A TW I732924 B TWI732924 B TW I732924B
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grinding
abrasive
microns
abrasive particles
pores
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TW106128215A
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TW201908059A (zh
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茅一超
張進傳
林俊成
張文華
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台灣積體電路製造股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • B24D7/066—Grinding blocks; their mountings or supports
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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Abstract

提供一種安裝在研磨輪上的研磨元件以及一種含有所述研磨元件的研磨輪用於進行研磨。所述研磨元件包括研磨齒，且所述研磨齒包含研磨材料，所述研磨材料具有框架結構以及分佈在所述框架結構中的孔隙。所述框架結構包含黏合材料及由所述黏合材料黏合的磨料微粒。所述孔隙的孔徑大於40微米但小於70微米。還提供一種使用所述研磨輪製造半導體封裝的方法。

Description

研磨元件、研磨輪及使用所述研磨輪製造半導體封裝的方法
本發明是有關於一種研磨元件、研磨輪及使用所述研磨輪製造半導體封裝的方法。
研磨是用於薄化半導體晶圓的晶粒並減小半導體封裝的厚度的一種最常用的技術。由於許多積體電路及電子裝置是自半導體晶圓製造而成，因此受控良好的晶圓薄化或封裝薄化對裝置性能及可靠性是有利的且有價值的。
一種研磨輪的研磨元件包括研磨齒。所述研磨齒包含研磨材料。所述研磨材料具有：框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中。所述孔隙的孔徑大於40微米且小於70微米。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
以下公開內容提供用於實作所提供主題的不同特徵的許多不同的實施例或實例。以下闡述元件及排列的具體實例以簡化本公開內容。當然，這些僅為實例且不旨在進行限制。例如，以下說明中將第一特徵形成在第二特徵“之上”或第二特徵“上”可包括其中第一特徵及第二特徵被形成為直接接觸的實施例，且也可包括其中第一特徵與第二特徵之間可形成有附加特徵、進而使得所述第一特徵與所述第二特徵可能不直接接觸的實施例。另外，本公開內容可能在各種實例中重複使用參考編號及/或字母。這種重複使用是出於簡潔及清晰的目的，而不是自身表示所論述的各種實施例及/或配置之間的關係。
此外，為易於說明，本文中可能使用例如“之下（beneath）”、“下面（below）”、“下部的（lower）”、“上方（above）”、“上部的（upper）”等空間相對性用語來闡述圖中所示的一個元件或特徵與另一（其他）元件或特徵的關係。所述空間相對性用語旨在除圖中所繪示的取向外還囊括裝置在使用或操作中的不同取向。設備可具有其他取向（旋轉90度或處於其他取向）且本文中所用的空間相對性描述語可同樣相應地進行解釋。
圖1A是說明根據本發明一些示例性實施例的研磨輪的示意性仰視圖。圖1B是說明根據本發明一些示例性實施例的研磨輪的一部分的示意性三維圖。圖1C是說明根據本發明一些示例性實施例的研磨輪的一部分的示意性剖視圖。圖1D是說明根據本發明一些示例性實施例的研磨輪的研磨齒的一部分的示意性放大剖視圖。
參照圖1A至圖1C，在一些實施例中，研磨輪100包括環形金屬基底102及安裝在金屬基底102的底表面102a上的多個研磨齒110。在一些實施例中，研磨輪100可進一步包括結構性增強元件或應力或衝擊吸收層。在一些實施例中，金屬基底102的材料包括鋁、鋼、鉬、鉬合金、鈦、或鈦合金。在一些實施例中，研磨齒充當安裝在研磨輪的基底（主體）上的研磨元件，以朝待研磨的結構/層施加研磨能力。在一些實施例中，研磨齒110可排列在環形金屬基底102的底表面102a上並排列在環形金屬基底102的外緣部分103上。在一些實施例中，環形金屬基底102可具有排列在環形金屬基底102的內緣部分104處的孔105。在一些實施例中，多個研磨齒110彼此分隔開且如圖1C所示彼此之間以均勻節距P並排排列。在一些實施例中，僅使用一種類型的研磨齒，且研磨齒110可以均勻節距P排列。根據一些實施例，可基於產品設計或對研磨能力的要求來修改節距P。在替代實施例中，可以不同節距來排列各種類型的研磨齒。在一些實施例中，研磨齒110被成形為磚狀矩形塊，且多個研磨齒110沿環形金屬基底102的外緣部分103短邊與短邊並排排列。在圖1C中，在某些實施例中，研磨齒110的下表面110a是在研磨製程期間的接觸表面，且接觸表面110a將與待研磨的晶圓的晶圓表面直接接觸。也就是說，研磨齒110在研磨製程期間充當研磨器。圖2是示出在根據本發明一些示例性實施例的半導體封裝的製造製程中，待研磨的晶圓之上的研磨輪的相對研磨軌跡的示意性俯視圖。如圖2所示，當研磨輪100沿特定方向（標記為箭頭）朝晶圓W移動時，由於排列在金屬基底102的底表面上的一些研磨齒110直接接觸晶圓表面，因此在研磨齒110的接觸表面110a（圖1C）與晶圓表面之間界定接觸區域CA，且此接觸區域是研磨輪的研磨區域。應理解，研磨輪的接觸區域或研磨區域沿研磨輪的不同移動軌跡變化，但晶圓或中間封裝結構應作為整體被研磨，從而在整體上均勻地減小高度（或厚度）。
參照圖1C及圖1D，在一些實施例中，研磨齒110包含研磨材料。在一些實施例中，研磨齒110是由研磨材料1100製成的塊結構，或研磨齒110的塊的至少最外部分包含研磨材料1100。在一些實施例中，研磨材料1100至少包含混合在黏合材料1104中且由黏合材料1104黏合的磨料微粒1102。在一些實施例中，如在圖1D中所見，研磨材料1100的框架結構包括分佈在由黏合磨料微粒1102（由黏合材料1104黏合）構成的支架內的大尺寸孔隙PV。在一些實施例中，研磨材料1100包括占研磨材料1100的總體積的至少55%體積比（%v/v）的孔隙（氣孔）PV。在一些實施例中，孔隙PV的孔徑大於約40微米但小於70微米，且可介於約40微米至約60微米的範圍內。對於具有約20微米（小於40微米）的小孔隙的研磨材料來說，通過阻塞或保留在研磨齒上的銅觀察到較差的研磨能力。對於具有大於70微米的孔隙的研磨材料來說，研磨齒可常常經受劣化。由於在研磨材料內的孔隙的孔徑相對大，因此在本文中的示例性實施例中闡述的研磨材料可被稱為“大孔隙（large-pore）”研磨材料。在某些實施例中，黏合材料包括樹脂黏合劑，且樹脂黏合劑含有熱固性樹脂。在一些實施例中，熱固性樹脂包含選自酚醛樹脂、合成橡膠樹脂、或氨基甲酸酯樹脂中的一種或多種材料。在一些實施例中，磨料微粒或顆粒包括金剛石微粒、氧化鋁微粒、碳化矽微粒、立方氮化硼微粒等。在一些實施例中，磨料微粒的粒徑介於約1.5微米至約20微米範圍內。在一個實施例中，磨料微粒是平均粒徑介於約3微米至約20微米範圍內的金剛石微粒（金剛石磨粒）。在一些實施例中，孔隙（總共）占研磨材料的總體積的至少55%v/v或約55%v/v至70%v/v，而由黏合材料及磨料顆粒組成的其他比例占黏合材料的總體積的約45%v/v至30%v/v。在一個實施例中，孔隙（總共）占研磨材料的總體積的至少60%v/v，而由黏合材料及磨料顆粒組成的其他比例占黏合材料的總體積的約40%v/v。在一些實施例中，對於由黏合材料及磨料微粒組成的比例來說，磨料微粒對黏合材料的重量比介於3:1至5:1範圍內。在一個實施例中，對於由黏合材料及磨料微粒組成的比例來說，磨料微粒對黏合材料的重量比為4.5:1。在一些實施例中，對於研磨材料來說，至少一些磨料微粒在研磨齒110的最外表面（接觸表面）處從黏合材料暴露出。應理解，磨料微粒的粒徑可根據研磨製程的所需研磨速率及待研磨的晶圓或封裝的表面粗糙度要求來進行調整或選擇。在一些實施例中，研磨材料可通過燃燒黏合材料與磨料微粒或顆粒的混合物來形成。
圖4A至圖4B是在研磨含金屬結構之後根據本發明一些示例性實施例的大孔隙研磨材料的局部微觀圖。在示例性實施例中，與圖1D所示研磨材料1100類似的大孔隙研磨材料包括占研磨材料的總體積的約60%v/v的孔隙（氣孔）PV，而由黏合材料及磨料顆粒組成的其他比例占黏合材料的總體積的約40%v/v。此外，在一些實施例中，對於大孔隙研磨材料來說，孔隙的孔徑介於約40微米至約60微米的範圍內，且磨料微粒為平均粒徑介於約3微米至約5微米範圍內的金剛石微粒（金剛石磨粒）。在一些實施例中，對於大孔隙研磨材料來說，在由黏合材料及磨料微粒組成的比例內，磨料微粒對黏合材料的重量比是4.5:1。如在圖4A至圖4B中所見，在由研磨材料中的黏合材料黏合的磨料微粒之間看到大尺寸的孔隙，且在圖4A中的圈出區及圖4B所示的放大圖中觀察到作為白點的金屬殘餘物（例如，銅殘餘物），如由標記 “Cu”的箭頭所指出。對於由包括具有圖4A或圖4B所示大孔隙研磨材料的研磨齒的研磨輪研磨的含金屬結構，觀察到令人滿意且受控良好的研磨結果。
在示例性實施例中，對包括模製化合物材料、銅/銅合金及聚合物材料的各種材料進行了測試，並由具有由不同研磨材料製成的研磨齒的研磨輪進行研磨。在一些實施例中，對於封裝結構的可應用於研磨的材料（包括模製化合物材料、銅/銅合金及聚合物材料）來說，可通過如上所述使用包括具有大孔隙研磨材料的研磨齒的研磨輪來實現等於或小於約2微米（小至0.3微米）的高品質總厚度變化（total thickness variation，TTV）。
圖5A至圖5B是在研磨含金屬結構之後對比研磨材料的局部微觀圖。為了進行對比，將對比研磨材料製備成包括占研磨材料的總體積的小於35%v/v的孔隙，而由黏合材料及磨料顆粒組成的其他比例占黏合材料的總體積的約65%v/v。對於此對比研磨材料來說，孔隙的孔徑是約20微米，且磨料微粒對黏合材料的比是約1:7。如在圖5A至圖5B中所見，在圖5A中觀察到作為大的白點（由標記“Cu”的箭頭指出）的大量金屬殘餘物（例如，銅殘餘物），且在圖5B中觀察到相當多的聚合物殘餘物（由標記“PM”的箭頭指出）。對於由包括具有圖5A所示對比研磨材料的研磨齒的研磨輪研磨的含金屬結構，從使用圖5A所示對比研磨材料的研磨結果觀察到金屬的過度研磨或凹陷。從此對比研磨材料的研磨結果觀察到較差的均勻性。
通過大孔隙研磨材料與對比研磨材料的對比應理解，如在本公開內容中所述的大孔隙研磨材料為在半導體晶圓之上的或封裝結構的各種材料的研磨提供更好的研磨均勻性及提高的研磨產率。此外，由於本公開內容的研磨材料或研磨齒上存留較少殘餘物，因此研磨齒更耐用以提供更好的研磨能力及延長的研磨使用壽命。
在一些實施例中，研磨輪可應用於包括半導體晶圓、晶粒及封裝結構的任意適當的結構。為薄化晶圓或中間晶圓級封裝結構，在研磨製程期間，可由包括具有大孔隙研磨材料的研磨齒的研磨輪來移除或研磨矽、半導體化合物材料、金屬或金屬性材料、或包封或模製材料。所述研磨製程可包括粗研磨製程及/或細研磨製程。
圖3A至圖3H是根據一些示例性實施例的半導體封裝的製造方法中的各階段的示意性剖視圖。在示例性實施例中，半導體製造方法是封裝製程的一部分。在一些實施例中，示出一個或多個晶圓或晶粒來表示晶圓的多個晶圓或晶粒，且示出一個或多個封裝來表示通過所述半導體製造方法所獲得的多個半導體封裝。
參照圖3A，在一些實施例中，提供其上塗布有緩衝層304的載體302，載體302可為玻璃載體或任何適合於承載用於所述半導體封裝的製造方法的半導體晶圓或再造晶圓（reconstituted wafer）的載體。在一些實施例中，緩衝層304包括剝離層，且所述剝離層可包括例如光熱轉換（light-to-heat conversion，LTHC）層。參照圖3A，在一些實施例中，緩衝層304包括黏合層或晶粒貼合膜。在某些實施例中，緩衝層304包括介電材料層，所述介電材料層包括苯並環丁烯（benzocyclobutene，BCB）、聚苯並惡唑（polybenzoxazole，PBO）、或任何其他適當的聚合物系介電材料。
參照圖3B，在一些實施例中，在載體302之上的緩衝層304上形成層間穿孔（through interlayer via，TIV）320。在一些實施例中，層間穿孔320為集成扇出型（Integrated fan-out，InFO）穿孔。在一些實施例中，形成層間穿孔320包括：在緩衝層304上形成具有開口的罩幕圖案（圖中未示出），接著通過電鍍或沉積形成填滿所述開口的金屬性材料（圖中未示出），以及移除所述罩幕圖案以在緩衝層304上形成層間穿孔320。在一些實施例中，形成層間穿孔320包括：首先通過在載體302上的緩衝層304之上濺鍍鈦層與銅晶種層（圖中未示出）的複合層（composite layer）來形成晶種層306（圖中未示出），後續再通過電鍍金屬性材料（例如，銅或銅合金）以填充罩幕圖案的開口來形成層間穿孔320。然而應理解，本發明的範圍並不僅限於以上所公開的材料及說明。
參照圖3B，在與載體302相對的被暴露出的緩衝層304上提供及設置多於一個晶片310。在示例性實施例中，晶片310可包括相同類型的晶片或不同類型的晶片或/且可為數位晶片（digital chip）、類比晶片（analog chip）或混合信號晶片（mixed signal chip）（例如，應用專用積體電路（application-specific integrated circuit，ASIC）晶片）、感測器晶片（sensor chip）、無線及射頻（radio frequency）晶片、存儲晶片、邏輯晶片、或電壓調節晶片（voltage regulator chip）。在一些實施例中，晶片310包括位於主動表面310a上的接墊312及位於接墊312上的金屬柱（metal post）314。在示例性實施例中，接墊312為鋁接觸墊。在一個實施例中，金屬柱314是銅柱或銅合金柱。在某些實施例中，晶片310經預模製且位於晶片310的接墊312上的金屬柱314被介電材料316覆蓋。在一些實施例中，緩衝層304包括晶粒貼合膜，且晶片310的背面黏合到載體302上的緩衝層304，而晶片的主動表面310a面朝上。在替代實施例中，在將晶片310放置在載體302上之前，晶片310上的金屬柱314未被覆蓋（即，未被模製或包封的裸晶粒），且晶粒貼合膜可貼合到晶片310的背面。在一些實施例中，將晶片310放置於載體302之上且排列在層間穿孔320旁邊（在被層間穿孔環繞的區域內）。在一些實施例中，在放置晶片310之前形成層間穿孔320。在一些實施例中，在放置晶片310之後形成層間穿孔320。在一些實施例中，如圖3B所示，虛線表示在後續切割製程中整個封裝300的切割線，且一些層間穿孔320被排列成靠近切割線但不位於所述切割線上，並且排列在晶片310的周圍。
參照圖3C，在一些實施例中，在載體302及位於緩衝層304上的晶片310上形成模製化合物350，且位於載體302之上及晶片310旁邊的層間穿孔320被模製在模製化合物350中。在一些實施例中，模製化合物350覆蓋緩衝層304並填充在晶片310與層間穿孔320之間。在某些實施例中，模製化合物350完全覆蓋層間穿孔320及晶片310。在一些實施例中，模製化合物350以超出晶片310及層間穿孔320的高度/厚度的高度對晶片310及層間穿孔320進行過度模製。在一個實施例中，模製化合物350的材料包括選自環氧樹脂、酚醛樹脂、及含矽樹脂中的至少一種類型的樹脂。
參照圖3D，在一些實施例中，對模製化合物350執行研磨製程以減小模製化合物350的高度，因此暴露出晶片310的金屬柱314及層間穿孔320。在某些實施例中，通過研磨，金屬柱314、層間穿孔320、及模製化合物350變得平坦且實質上齊平。在替代性實施例中，在研磨之後，模製化合物350的頂表面350a可與層間穿孔320的頂表面320a及晶片310的金屬柱314的頂表面314a實質上齊平。在一些實施例中，使用包括具有大孔隙研磨材料的研磨齒的研磨輪來執行研磨製程。在某些實施例中，研磨齒是由具有框架結構的大孔隙研磨材料製成，所述框架結構包括分佈在由黏合磨料微粒構成的框架之間的大尺寸孔隙，所述黏合磨料微粒由黏合材料黏合（圖1D）。在一些實施例中，大孔隙研磨材料包括占研磨材料的總體積的至少55%體積比（%v/v）的孔隙（氣孔），孔隙的孔徑大於約40微米但小於約70微米，磨料微粒的粒徑介於約1.5微米至約20微米範圍內，且磨料微粒對黏合材料的重量比介於3:1至5:1範圍內。在某些實施例中，黏合材料包括樹脂黏合劑，且所述樹脂黏合劑含有熱固性樹脂。在一些實施例中，磨料微粒或顆粒包括金剛石微粒、氧化鋁微粒、碳化矽微粒、立方氮化硼微粒等。在一個實施例中，磨料微粒是平均粒徑介於約3微米至約20微米範圍內的金剛石微粒（金剛石磨粒）。在一個實施例中，孔隙（總共）占研磨材料的總體積的至少60%v/v，而由黏合材料及磨料顆粒組成的其他比例占黏合材料的總體積的約40%v/v。在一個實施例中，對於由黏合材料及磨料微粒組成的比例來說，磨料微粒對黏合材料的重量比為4.5:1。
如圖3D所示，由於金屬柱314的頂表面314a、及層間穿孔320的頂表面320a從模製化合物350暴露出，因此模製化合物350不完全覆蓋層間穿孔320及金屬柱314。在一些實施例中，在如上所述通過研磨製程使用包括具有大孔隙研磨材料的研磨齒的研磨輪來研磨模製化合物350之後，可實現受控良好且表面光滑度及平整度更好的模製化合物350。在一些實施例中，經研磨模製化合物350的表面粗糙度（Ra）小於2微米或甚至小至0.3微米至0.5微米。在某些實施例中，特別是對於朝模製化合物350及嵌置在模製化合物350內的層間穿孔（及/或金屬柱314）執行的研磨製程，獲得小的總厚度變化值及小的表面粗糙度。通過如上所述使用包括具有大孔隙研磨材料的研磨齒的研磨輪應用所公開的研磨製程，可實現封裝結構的提高的表面光滑度及平整度。在某些實施例中，在經研磨結構（例如，層間穿孔及模製化合物）的表面上產生很少凹坑或不產生凹坑，從而產生小的表面粗糙度及更好的表面均勻度。
參照圖3E，在一些實施例中，在模製化合物350上、晶片310的金屬柱314之上、及層間穿孔320上形成重佈線層（redistribution layer）360。在一些實施例中，重佈線層360電連接到層間穿孔320及晶片310的金屬柱314。在某些實施例中，形成重佈線層360包括交替地依序形成一個或多個介電材料層及一個或多個金屬化層，且所述金屬化層可夾置在所述介電材料層之間。在一些實施例中，一個或多個金屬化層的材料包括鋁、鈦、銅、鎳、鎢、銀、及/或其合金。在一些實施例中，一個或多個介電材料層的材料包括聚醯亞胺、苯並環丁烯、或聚苯並惡唑。在一些實施例中，重佈線層360是電連接到晶片310且電連接到層間穿孔320的前側（front-side）重佈線層。在某些實施例中，由於位於下方的模製化合物350提供更好的平面化及均勻度，因此隨後形成的重佈線層360（特別是具有細小的線寬度或緊密的間隔的金屬化層）可以均勻的線寬度及/或提高的線/配線（line/wiring）可靠性形成。
參照圖3F，在一些實施例中，在重佈線層360上設置導電元件370且導電元件370電連接到重佈線層360。在一些實施例中，在設置導電元件370之前，可應用溶劑（flux）用於進行更好的貼合。在一些實施例中，導電元件370是例如放置在重佈線層360上的焊料球（solder ball）或球柵陣列（ball grid array，BGA）球。在一些實施例中，一些導電元件370經由重佈線層360電連接到晶片310，且一些導電元件370電連接到層間穿孔320。
參照圖3G，在一些實施例中，將整個封裝上下翻轉並設置在載體膜（carrier film）380上。在一些實施例中，將整個封裝300從載體302剝離，以將晶片310從載體302分離。在一些實施例中，在從載體302剝離之後，緩衝層304被暴露出並保留在模製化合物350及晶片310上。在一些實施例中，在從載體302剝離之後，通過蝕刻製程或清洗製程移除緩衝層304。
參照圖3H，在某些實施例中，執行分割製程以沿著切割線（虛線）將整個封裝結構（至少切穿模製化合物350及重佈線層360）切割成各個分離的半導體封裝30。在一個實施例中，分割製程為包括機械刀片鋸切（mechanical blade sawing）或鐳射切割（laser cutting）的晶圓分割製程（wafer dicing process）。
根據一些實施例，一種研磨輪的研磨元件包括研磨齒。所述研磨齒包含研磨材料。所述研磨材料具有：框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中。所述孔隙的孔徑大於40微米且小於70微米。
在上述的研磨元件中，所述孔隙占所述研磨材料的總體積的約55%體積比（%v/v）至約70%v/v。
在上述的研磨元件中，所述孔隙占所述研磨材料的所述總體積的約60%v/v。
在上述的研磨元件中，所述磨料微粒的粒徑介於約1.5微米至約20微米範圍內，且所述磨料微粒對所述黏合材料的重量比介於3:1至5:1範圍內。
在上述的研磨元件中，所述磨料微粒的所述粒徑介於約3微米至約20微米範圍內，且所述磨料微粒對所述黏合材料的所述重量比為4.5:1。
在上述的研磨元件中，所述黏合材料包括熱固性樹脂黏合劑。
在上述的研磨元件中，所述磨料微粒包括金剛石微粒、氧化鋁微粒、碳化矽微粒或立方氮化硼微粒。
在上述的研磨元件中，所述孔隙的所述孔徑介於約40微米至約60微米範圍內，所述磨料微粒是平均粒徑介於約3微米至約20微米範圍內的金剛石微粒，且所述磨料微粒對所述黏合材料的重量比為4.5:1。
根據一些實施例，一種研磨輪包括：環形金屬基底；以及多個研磨齒，安裝在所述金屬基底的表面上。所述多個研磨齒彼此隔開一距離且沿所述金屬基底的外緣部分排列。所述多個研磨齒中的每一個均包含研磨材料，所述研磨材料具有：框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中。所述孔隙占所述研磨材料的總體積的約55%體積比（%v/v）至約70%v/v。
在上述的研磨輪中，所述多個研磨齒中的每一個均是由所述研磨材料製成的塊結構。
在上述的研磨輪中，所述多個研磨齒中的每一個均是矩形塊，且所述塊的至少最外部分包含所述研磨材料。
在上述的研磨輪中，所述孔隙的孔徑大於40微米且小於70微米。
在上述的研磨輪中，所述孔隙占所述研磨材料的所述總體積的約60%v/v。
在上述的研磨輪中，所述磨料微粒的粒徑介於約1.5微米至約20微米範圍內，且所述磨料微粒對所述黏合材料的重量比介於3:1至5:1範圍內。
在上述的研磨輪中，所述磨料微粒的所述粒徑介於約3微米至約20微米範圍內，且所述磨料微粒對所述黏合材料的所述重量比為約4.5:1。
在上述的研磨輪中，所述黏合材料包括熱固性樹脂黏合劑，且所述磨料微粒包括金剛石微粒、氧化鋁微粒、碳化矽微粒或立方氮化硼微粒。
在上述的研磨輪中，所述孔隙的孔徑介於約40微米至約60微米範圍內，所述磨料微粒是平均粒徑介於約3微米至約20微米範圍內的金剛石微粒，且所述磨料微粒對所述黏合材料的重量比為約4.5:1。
根據一些實施例，闡述一種製造半導體封裝的方法。提供載體。形成穿孔且將晶片設置在所述載體上。形成模製化合物以包封所述晶片及所述穿孔。使用研磨輪研磨所述模製化合物以暴露出所述穿孔，所述研磨輪具有研磨齒，所述研磨齒包含研磨材料。所述研磨材料包括：框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中，且所述孔隙的孔徑大於40微米且小於70微米。在所述模製化合物及所述晶片上形成重佈線層。所述重佈線層電連接到所述穿孔及所述晶片。將導電元件安裝在所述重佈線層上。所述導電元件電連接到所述晶片及所述穿孔。
在上述的製造半導體封裝的方法中，所述研磨所述模製化合物包括將所述模製化合物研磨至暴露出所述晶片的金屬柱。
在上述的製造半導體封裝的方法中，所述孔隙占所述研磨材料的總體積的約55%體積比（%v/v）至約70%v/v，所述孔隙的孔徑介於約40微米至約60微米範圍內，所述磨料微粒是平均粒徑介於約3微米至約20微米範圍內的金剛石微粒，且所述磨料微粒對所述黏合材料的重量比介於3:1至5:1範圍內。
以上概述了若干實施例的特徵，以使所屬領域中的技術人員可更好地理解本發明的各個方面。所屬領域中的技術人員應知，其可容易地使用本發明作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的及/或實現與本文中所介紹的實施例相同的優點。所屬領域中的技術人員還應認識到，這些等效構造並不背離本發明的精神及範圍，而且他們可在不背離本發明的精神及範圍的條件下對其作出各種改變、代替、及變更。
30‧‧‧半導體封裝100‧‧‧研磨輪102‧‧‧環形金屬基底102a‧‧‧環形金屬基底的底表面103‧‧‧外緣部分104‧‧‧內緣部分105‧‧‧孔110‧‧‧研磨齒110a‧‧‧研磨齒的下表面/接觸表面302‧‧‧載體304‧‧‧緩衝層310‧‧‧晶片310a‧‧‧主動表面312‧‧‧接墊314‧‧‧金屬柱316‧‧‧介電材料320‧‧‧層間穿孔320a‧‧‧層間穿孔的頂表面350‧‧‧模製化合物350a‧‧‧模製化合物的頂表面360‧‧‧重佈線層370‧‧‧導電元件380‧‧‧載體膜1100‧‧‧研磨材料1102‧‧‧磨料微粒1104‧‧‧黏合材料CA‧‧‧接觸區域P‧‧‧節距PV‧‧‧孔隙W‧‧‧晶圓
結合附圖閱讀以下詳細說明，會最好地理解本發明的各個方面。應注意，根據本行業中的標準慣例，各種特徵並非按比例繪製。事實上，為論述清晰起見，可任意增大或減小各種特徵的尺寸。 圖1A是說明根據本發明一些示例性實施例的研磨輪的示意性仰視圖。 圖1B是說明根據本發明一些示例性實施例的研磨輪的一部分的示意性三維圖。 圖1C是說明根據本發明一些示例性實施例的研磨輪的一部分的示意性剖視圖。 圖1D是說明根據本發明一些示例性實施例的研磨輪的研磨齒的一部分的示意性放大剖視圖。 圖2是示出在根據本發明一些示例性實施例的半導體封裝的製造製程中，待研磨的晶圓之上的研磨輪的相對研磨軌跡的示意性俯視圖。 圖3A至圖3H是在根據本發明一些示例性實施例的半導體封裝的製造製程中的各階段的示意性剖視圖。 圖4A至圖4B是根據本發明一些示例性實施例的研磨輪的研磨齒的大孔隙研磨材料的局部微觀圖。 圖5A至圖5B是研磨輪的研磨齒的對比研磨材料的局部微觀圖。
110‧‧‧研磨齒
1100‧‧‧研磨材料
1102‧‧‧磨料微粒
1104‧‧‧黏合材料
PV‧‧‧孔隙

Claims (10)

  1. 一種研磨輪的研磨元件，包括：研磨齒，包含研磨材料，所述研磨材料具有框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料，以及孔隙，分佈在所述框架結構中，其中所述孔隙的孔徑大於40微米且小於70微米，所述孔隙占所述研磨材料的總體積的約55%體積比(%v/v)至約70%v/v，其中所述磨料微粒對所述黏合材料的重量比介於3：1至5：1範圍內。
  2. 如申請專利範圍第1項所述之研磨輪的研磨元件，其中所述孔隙占所述研磨材料的所述總體積的約60%v/v。
  3. 如申請專利範圍第1項所述之研磨輪的研磨元件，其中所述磨料微粒的粒徑介於約1.5微米至約20微米範圍內。
  4. 如申請專利範圍第3項所述之研磨輪的研磨元件，其中所述磨料微粒的所述粒徑介於約3微米至約20微米範圍內，且所述磨料微粒對所述黏合材料的所述重量比為4.5：1。
  5. 一種研磨輪，包括：環形金屬基底；以及多個研磨齒，安裝在所述金屬基底的表面上，其中所述多個研磨齒彼此隔開一距離且沿所述金屬基底的外緣部分排列，所述多個研磨齒中的每一個均包含研磨材料，所述 研磨材料具有：框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中，其中所述黏合材料是樹脂黏合材料，其中所述孔隙占所述研磨材料的總體積的約55%體積比(%v/v)至約70%v/v，所述孔隙的孔徑大於40微米且小於70微米，且所述磨料微粒對所述黏合材料的重量比介於3：1至5：1範圍內。
  6. 如申請專利範圍第5項所述之研磨輪，其中所述多個研磨齒中的每一個均是由所述研磨材料製成的塊結構。
  7. 如申請專利範圍第5項所述之研磨輪，其中所述多個研磨齒中的每一個均是矩形塊，且所述塊的至少最外部分包含所述研磨材料。
  8. 如申請專利範圍第5項所述之研磨輪，其中所述黏合材料包含選自酚醛樹脂、合成橡膠樹脂、或氨基甲酸酯樹脂中的一種或多種材料。
  9. 一種製造半導體封裝的方法，包括：提供載體；形成穿孔且將晶片設置在所述載體上；形成模製化合物以包封所述晶片及所述穿孔；使用研磨輪研磨所述模製化合物以暴露出所述穿孔，所述研磨輪具有研磨齒，所述研磨齒包含研磨材料，所述研磨材料包括： 框架結構，包含磨料微粒及黏合所述磨料微粒的黏合材料；以及孔隙，分佈在所述框架結構中且占所述研磨材料的總體積的約55%體積比(%v/v)至約70%v/v，且所述孔隙的孔徑大於40微米且小於70微米；在所述模製化合物及所述晶片上形成重佈線層，所述重佈線層電連接到所述穿孔及所述晶片；以及將導電元件安裝在所述重佈線層上，所述導電元件電連接到所述晶片及所述穿孔。
  10. 如申請專利範圍第9項所述之製造半導體封裝的方法，其中所述研磨所述模製化合物包括將所述模製化合物研磨至暴露出所述晶片的金屬柱。
TW106128215A 2017-07-18 2017-08-21 研磨元件、研磨輪及使用所述研磨輪製造半導體封裝的方法 TWI732924B (zh)

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