JP5587123B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5587123B2 JP5587123B2 JP2010222438A JP2010222438A JP5587123B2 JP 5587123 B2 JP5587123 B2 JP 5587123B2 JP 2010222438 A JP2010222438 A JP 2010222438A JP 2010222438 A JP2010222438 A JP 2010222438A JP 5587123 B2 JP5587123 B2 JP 5587123B2
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- electrode terminal
- surface side
- terminal group
- insulating film
- wiring board
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- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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Description
図1は本発明の実施の形態の半導体装置の構造の一例を示す断面図である。
におけるボンディングリード7aiの表面には、給電線を介して金(Au)等のめっき膜が形成されている。
2 下段パッケージ
3 コントローラチップ(半導体チップ)
3a 主面(表面)
3b 裏面
3c 側面
3d パッド(ボンディングパッド)
4 バンプ電極(導電性部材)
5 半田ボール(外部端子)
6 アンダーフィル材(封止材)
7 配線基板(下段基板)
7a 上面
7b 下面
7c,7ca,7cb,7cc プリスタックランド(第1電極)
7d 第1ランド群(第1電極端子群)
7e,7ea,7eb,7f,7h フリップチップランド(第2電極)
7g,7i 第2ランド群(第2電極端子群)
7j ランド(ボールランド)
7k チップ搭載領域
7m 配線層(上面側配線層)
7n 配線層(上面側配線層)
7p ビア
7q 配線層(下面側配線層)
7r 配線層(下面側配線層)
7s 絶縁膜
7t1 ソルダレジスト膜(上面側絶縁膜)
7t2 ソルダレジスト膜(上面側絶縁膜)
7u ソルダレジスト膜(下面側絶縁膜)
7v コア材(基材)
7w 表面
7x 裏面
7y スルーホール
7z 給電線
7za 給電線
7zb 給電線
7zc 給電線(共有部分)
7zd 給電線
7ze 給電線(共有部分)
7aa 端部(辺)
7ab 第1領域
7ac 開口部
7ad 第3ランド群(第3電極端子群)
7ae 開口部
7af 配線部
7ag 開口部
7ah オーバーラップ部
7ai ボンディングリード
8 半田ボール
9 上段パッケージ
10 メモリチップ(半導体チップ)
10a 主面
10b 裏面
10c パッド
11 めっき層(めっき膜)
12 封止体
13 配線基板(上段基板)
13a 上面
13b 下面
13c ボンディングリード
13d ランド
13e コア材
13f 配線層
13g ソルダレジスト膜
13h スルーホール
14 MAP基板(配線基板)
14a デバイス領域
14b ダイシング領域
14c 交差点部
15 ワイヤ(導電性部材)
16 ブレード
17 ダイボンド材
18 マザーボード(実装基板)
18a リード
19 ワイヤ(導電性部材)
20 封止体
Claims (8)
- 以下の工程を含むことを特徴とする半導体装置の製造方法:
(a)平面形状が四角形から成る上面と、
前記上面に設けられたチップ搭載領域と、
前記上面に形成され、かつ前記上面の端部に沿って形成された第1電極端子群と、
前記上面に形成され、かつ平面視において、前記第1電極端子群よりも内側に形成された第2電極端子群と、
前記第1電極端子群における複数の第1電極とそれぞれ繋がり、かつ前記複数の第1電極のそれぞれから前記上面の前記端部に向かって延在する複数の第1給電線と、
前記第2電極端子群における複数の第2電極とそれぞれ繋がり、かつ前記複数の第2電極のそれぞれから、平面視において、前記第1電極端子群と前記第2電極端子群との間に位置する第1領域に向かって延在する複数の第2給電線と、
前記第1領域を開口する開口部を有し、かつ前記第1電極端子群および前記第2電極端子群を露出するように、かつ前記複数の第1給電線および前記第2給電線を覆うように、前記上面に形成された第1上面側絶縁膜と、
前記開口部の内部を塞ぐように、かつ前記第1電極端子群および前記第2電極端子群を露出するように、前記第1上面側絶縁膜上に形成された第2上面側絶縁膜と、
前記上面とは反対側の下面と、
前記下面に形成され、かつ前記第1電極端子群および前記第2電極端子群とそれぞれ電気的に接続された第3電極端子群と、
前記第3電極端子群を露出するように、前記下面に形成された第1下面側絶縁膜と、
を備えた配線基板を準備する工程;
(b)平面形状が四角形から成る表面、前記表面に形成された複数のボンディングパッド、および前記表面とは反対側の裏面を有する半導体チップを、前記配線基板の前記チップ搭載領域に配置する工程;
(c)前記半導体チップの前記複数のボンディングパッドと前記配線基板の前記複数の第2電極とを、複数の導電性部材を介してそれぞれ電気的に接続する工程;
(d)前記配線基板の前記第3電極端子群に複数の外部端子をそれぞれ形成する工程;
ここで、
前記複数の第1電極端子群および前記複数の第2電極端子群の表面には、電解めっき法を用いてめっき層が形成されており、
前記第1領域は、平面視において、前記半導体チップの辺に沿って設けられており、
前記第1領域は、平面視において、前記半導体チップの周囲に配置されており、
前記第2上面側絶縁膜は、平面視において、前記半導体チップ周囲に、かつ環状に形成されている。 - 請求項1において、
前記配線基板は、以下の工程(a1)−(a4)により製造される;
(a1)前記上面と、前記チップ搭載領域と、前記第1電極端子群と、前記第2電極端子群と、前記複数の第1給電線と、前記複数の第2給電線と、前記上面に形成され、かつ前記複数の第2給電線のそれぞれと繋がる第3給電線と、前記開口部を有し、かつ前記第1電極端子群、前記第2電極端子群および前記第3給電線を露出するように、かつ前記複数の第1給電線および前記第2給電線を覆うように、前記上面に形成された前記第1上面側絶縁膜と、前記下面と、前記第3電極端子群と、前記第1下面側絶縁膜と、を備えた前記配線基板を準備する工程;
(a2)前記(a1)工程の後、前記第1上面側絶縁膜から露出した前記第1電極端子群および前記第2電極端子群の表面に、電解めっき法を用いて前記めっき層を形成する工程;
(a3)前記(a2)工程の後、前記開口部から露出した前記第3給電線を除去する工程;
(a4)前記(a3)工程の後、前記開口部の内部を塞ぐように、かつ前記第1電極端子群および前記第2電極端子群を露出するように、前記第1上面側絶縁膜上に前記第2上面側絶縁膜を形成する工程。 - 請求項1において、
前記配線基板は、表面および裏面を有する基材と、前記基材の前記表面に形成された第1上面側配線層と、前記第1上面側配線層上に形成された第3上面側絶縁膜と、前記第3上面側絶縁膜上に形成され、かつ前記第1上面側配線層と電気的に接続された、前記第1電極端子群および前記第2電極端子群を備えた第2上面側配線層と、前記第2上面側配線層上に形成された前記第1上面側絶縁膜と、
前記基材の前記裏面に形成され、かつ前記第1上面側配線層と電気的に接続された第1下面側配線層と、前記第1下面側配線層上に形成された第2下面側絶縁膜と、前記第2下面側絶縁膜上に形成され、かつ前記第1下面側配線層と電気的に接続された、前記第3電極端子群を備えた第2下面側配線層と、前記第2下面側配線層上に形成された前記第1下面側絶縁膜と、を有し、
前記基材は、ガラス繊維を含む第1樹脂材から成り、
前記第1上面側絶縁膜および前記第1下面側絶縁膜は、前記ガラス繊維を含まない第2樹脂材から成る。 - 請求項1において、
前記第2上面側絶縁膜の厚さは、前記第1上面側絶縁膜の厚さよりも厚くなるように、形成されていることを特徴とする半導体装置の製造方法。 - 請求項3において、
前記第2電極端子群は、前記第2給電線とは電気的に接続されずに、前記第2上面側配線層の配線を介して前記第1電極端子群の前記複数の第1電極の何れかに電気的に接続される前記第2電極を含んでいることを特徴とする半導体装置の製造方法。 - 請求項1において、
前記第2電極端子群の前記複数の第2電極は、内側列と外側列の2列で配置され、前記内側列の前記複数の第2電極は、前記内側列よりさらに内側に向かって延在する第4給電線と電気的に接続されていることを特徴とする半導体装置の製造方法。 - 請求項6において、
前記第2電極端子群の前記複数の第2電極は、前記半導体チップの外周部に沿って千鳥配列で設けられていることを特徴とする半導体装置の製造方法。 - 請求項1において、
前記第2上面側絶縁膜は、前記第1領域の前記開口部の周囲において、前記第1上面側絶縁膜と重なる箇所を有していることを特徴とする半導体装置の製造方法。
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TW100131821A TWI529851B (zh) | 2010-09-30 | 2011-09-02 | Manufacturing method of semiconductor device |
US13/235,247 US8389339B2 (en) | 2010-09-30 | 2011-09-16 | Method of manufacturing semiconductor device |
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CN102446779A (zh) | 2012-05-09 |
US20120083073A1 (en) | 2012-04-05 |
CN102446779B (zh) | 2016-01-20 |
TW201222721A (en) | 2012-06-01 |
JP2012079854A (ja) | 2012-04-19 |
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