TWI602275B - 封裝結構及其製作方法 - Google Patents

封裝結構及其製作方法 Download PDF

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Publication number
TWI602275B
TWI602275B TW105133328A TW105133328A TWI602275B TW I602275 B TWI602275 B TW I602275B TW 105133328 A TW105133328 A TW 105133328A TW 105133328 A TW105133328 A TW 105133328A TW I602275 B TWI602275 B TW I602275B
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Taiwan
Prior art keywords
conductive
dielectric material
circuit component
region
package structure
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TW105133328A
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English (en)
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TW201814864A (zh
Inventor
許詩濱
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恆勁科技股份有限公司
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Priority to TW105133328A priority Critical patent/TWI602275B/zh
Priority to CN201610969569.8A priority patent/CN107958844B/zh
Application granted granted Critical
Publication of TWI602275B publication Critical patent/TWI602275B/zh
Priority to US15/782,943 priority patent/US10361160B2/en
Publication of TW201814864A publication Critical patent/TW201814864A/zh

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Description

封裝結構及其製作方法
本發明係關於一種適用於大面積矩形面板形式製造的封裝結構以及其製作方法。
新一代電子產品不僅追求輕薄短小的高密度，更有朝向高功率發展的趨勢；因此，積體電路(Integrated Circuit，簡稱IC)技術及其後端的晶片封裝技術亦隨之進展，以符合此新一代電子產品的效能規格。
目前晶圓尺寸為基底的封裝方式可參考第1圖來說明，先在晶圓承載板(Wafer carrier)11上形成黏接層18，如第1A圖所示；接著將半導體晶片13或電子元件15的接腳16朝下並藉由該黏接層18而黏貼於該晶圓承載板11，再以鑄模技術使鑄模化合物12包覆及封裝該半導體晶片13或電子元件15，如第1B圖所示；在去除該晶圓承載板11及該黏接層18之後，將該半導體晶片13、該電子元件15、及該鑄模化合物12的組合結構20上下翻轉，使得重佈線層(ReDistribution Layer，簡稱RDL)17可製作於該組合結構20的上表面21之上，如第1C圖所示。
倘若欲以一般習知的微影蝕刻技術製作細線路間距(fine pitch)的重佈線層17於該組合結構20的上表面21上，則該上表面21必須能提供很高的平坦度。然而，為了達成上述對該上表面21平坦度的要求，該晶圓承載板11及該黏接層18必須採用較為昂貴者，且該半導體晶片13及該電子元件15必須以精準而慢速的方式黏貼於該黏接層18；這不利於大面積矩形面板(Panel)形式之製造，並將會提高封裝元件的製造成本。因此，有必要發展新的封裝基板元件技術，以對治及改善上述的問題。
為改善上述問題及達成超細線路間距和超細凸塊間距之目的，本發明提供一種封裝結構，其包含：一導電圖案層，包含一凸塊區及一線路區，其中該凸塊區包含複數個導電凸塊及一圍繞該等導電凸塊的第一介電材料，該線路區包含複數個導電線路及一圍繞並覆蓋該等導電線路的第二介電材料；一電路元件，具有複數個連接端並設置於該凸塊區上，其中該等連接端與該等導電凸塊彼此對應；一絕緣阻隔膠，其形成於該第二介電材料上並圍繞該電路元件的側邊下緣；以及一第三介電材料，包覆該電路元件及該線路區。
在一實施例中，該導電圖案層進一步包含一阻隔框，其設置於該凸塊區與該線路區之間，且該阻隔框具有一線寬，使得該電路元件的邊緣位於該阻隔框的線寬範圍內。
根據本發明另一實施例提供一種封裝結構之製作方法，其步驟包含：形成一導電圖案層於一承載板上，其中該導電圖案層包含一凸塊區及一線路區，該凸塊區包含複數個導電凸塊，且該線路區包含複數個導電線路；形成一第一第二介電材料，其包覆該等導電線路；設置一具有複數個連接端的電路元件於該凸塊區上，使得該等連接端與該等導電凸塊彼此對應；形成一絕緣阻隔膠於該第一第二介電材料上並圍繞該電路元件的側邊下緣；形成一第二第三介電材料於該承載板上，使其包覆該電路元件及該線路區；移除該承載板，並形成一第四介電材料於該導電圖案層及該電路元件上，使其圍繞該等導電凸塊及該電路元件的該等連接端；以及形成複數個金屬柱狀物於該第四介電材料中，使其連接該等導電凸塊及該等導電線路。
根據本發明另一實施例提供一種封裝結構之製作方法，其步驟包含：形成一導電圖案層於一承載板上，其中該導電圖案層包含一凸塊區、一圍繞該凸塊區的金屬阻隔框、及一圍繞該導電阻隔框的線路區，該凸塊區包含複數個導電凸塊，該線路區包含複 數個導電線路，且該金屬阻隔框具有一線寬；形成一第二介電材料，其包覆該金屬阻隔框及該等導電線路；設置一具有複數個連接端的電路元件於該凸塊區及該金屬阻隔框上，使得該等連接端與該等導電凸塊彼此對應，且該電路元件的邊緣位於該金屬阻隔框的線寬範圍內；形成一絕緣阻隔膠於該第二介電材料上並圍繞該電路元件的側邊下緣；形成一第三介電材料於該承載板上，使其包覆該電路元件及該線路區；移除該承載板，並形成一第四介電材料於該導電圖案層及該電路元件上，使其圍繞該等導電凸塊及該電路元件的該等連接端；以及形成複數個金屬柱狀物於該第四介電材料中，使其連接該等導電凸塊及該等導電線路。
100、200、300、400、500‧‧‧封裝結構
110‧‧‧承載板
120‧‧‧導電圖案層
121~126、520‧‧‧導電線路
130‧‧‧阻隔框
135~137‧‧‧導電凸塊
230‧‧‧凸塊區
330‧‧‧線路區
140‧‧‧絕緣阻隔膠
150、500‧‧‧電路元件
151~153、551~552‧‧‧連接端
127、138、160、178、188‧‧‧介電材料
170‧‧‧導柱層
171~177‧‧‧金屬柱狀物
180‧‧‧重佈線層
181~187‧‧‧導電線路
191~194‧‧‧金屬導柱
第1A~1C圖為習知晶圓級封裝結構的製程步驟之對應剖面圖。
第2A圖為根據本發明第一實施例的封裝結構之剖面示意圖。
第2B圖為根據本發明第三實施例的封裝結構之剖面示意圖。
第3A圖為第一實施例導電圖案層在X-Y平面的剖面圖。
第3B圖為第三實施例導電圖案層在X-Y平面的剖面圖。
第4A圖為根據本發明第二實施例的封裝結構之剖面示意圖。
第4B圖為根據本發明第四實施例的封裝結構之剖面示意圖。
第5A~5B圖為本發明封裝結構製程步驟之一的封裝基板剖面圖。
第6A~6D圖為本發明封裝結構製程步驟之一的封裝基板剖面圖。
第7A~7B圖為本發明封裝結構製程步驟之一的封裝基板剖面圖。
第8A~8B圖為本發明封裝結構製程步驟之一的封裝基板剖面圖。
第9圖為根據本發明第五實施例的封裝結構之剖面示意圖。
為使對本發明之特徵、目的及功能有更進一步的認知與瞭解，茲配合圖式詳細說明本發明的實施例如後。在所有的說明書及圖示中，將採用相同的元件編號以指定相同或類似的元件。
在各個實施例的說明中，當一元素被描述是在另一元素之「上方/上」或「下方/下」，係指直接地或間接地在該另一元素之上或之下的情況，其可能包含設置於其間的其他元素；所謂的「直接地」係指其間並未設置其他中介元素。「上方/上」或「下方/下」等的描述係以圖式為基準進行說明，但亦包含其他可能的方向轉變。所謂的「第一」、「第二」、及「第三」係用以描述不同的元素，這些元素並不因為此類謂辭而受到限制。為了說明上的便利和明確，圖式中各元素的厚度或尺寸，係以誇張或省略或概略的方式表示，且各元素的尺寸並未完全為其實際的尺寸。
第2A圖為根據本發明第一實施例的封裝結構100之剖面示意圖。該封裝結構100包含：一重佈線層180、一導柱層170、一導電圖案層120、一電路元件150、一絕緣阻隔膠140以及一介電材料160；其中，該導電圖案層120的平面圖可參考第3A圖，而區分成凸塊區230及線路區330等二個部分，其中該線路區330為圍繞該凸塊區230的外環區域。也就是說，第2A圖代表本實施例封裝結構100在X-Z平面的剖面圖，Z方向朝上，因此該重佈線層180位於該封裝結構100的最下層，而該導柱層170、該導電圖案層120、該電路元件150及該介電材料160則依序向上堆疊成層狀結構。此外，第3A圖代表本實施例的該導電圖案層120在X-Y平面的剖面圖，該凸塊區230基本上是方框或矩形框，其框外為線路區330。該絕緣阻隔膠140形成於該線路區330上並圍繞該電路元件150的側邊下緣。本發明對該凸塊區230的外框形狀不加以限制，端視後續將要置放的電路元件150的外形而定，使得該電路元件150的邊緣能落在該線路區330的範圍內，則該電路元件150與該線路區330能將該凸塊區230包覆起來。在此，該絕緣阻隔膠140的組成材質可以是樹脂材料，而以點膠(Dispensing) 或薄膜型材料真空貼合技術形成於該電路元件150的側邊下緣周邊。
以第2A圖為例，該凸塊區230包含導電凸塊135~137及圍繞該等導電凸塊135~137的介電材料138，該線路區330則包含導電線路121~126及圍繞並覆蓋該等導電線路121~126的介電材料127。該等導電凸塊135~137的位置安排會與將要置放其上的電路元件150的連接端151~153彼此對應，例如，排列成行列型式的矩陣。該等導電凸塊135~137的相鄰者之間的間隔距離可小到10μm。該等導電線路121~126組成該封裝結構100的上層電路布局。該重佈線層180又稱為增線層，係為該封裝結構100的上層電路布局，而形成於該導電圖案層120下方。此外，該導柱層170包含金屬柱狀物171~177以及圍繞該等金屬柱狀物171~177的介電材料178，該重佈線層180包含導電線路181~187以及圍繞該等導電線路181~187的介電材料188。如第2A圖所示，透過該等金屬柱狀物171~177，該等導電凸塊135~137及該等導電線路121~126可連接到作為該封裝結構100下層電路布局的該重佈線層180，使得該等導電凸塊135~137可重新連接到其他合適的位置，且該等導電線路121~126可與該等導電線路181、182、186、187組合成更高密度的電路。
該電路元件150可以是主動元件或半導體晶片，其係以積體電路製程技術施加於半導體晶圓(wafer)，並加以切割成晶粒(die)及接上作為連接端151~153的外接腳墊(或稱為接腳(pin)或墊片(pad))，例如，特殊應用積體電路(Application-Specific Integrated Circuit，簡稱ASIC)或應用處理器(Application Processor，簡稱AP)。該介電材料160用以包覆該電路元件150及該線路區330，可藉由封裝膠體的鑄模技術來製作，例如，壓縮鑄模法(Compression molding)，其組成材質可以是酚醛基樹脂(Novolac-based resin)、環氧基樹脂(Epoxy-based resin)、或矽基樹脂(Silicone-based resin)等絕緣材料；但本發明對此不加以限制，亦可以使用液態樹脂充填技術或膜狀介電材料真空壓膜技術。在 本實施例中，該等介電材料127、138、160、178、188可以是相同或不同的組成材質，該介電材料127可以局部或完全覆蓋，該等導電線路121~126，或平齊於該等導電線路121~126的端面，本發明對此亦不加以限制。
當該電路元件150設置於該導電圖案層120上的時候，其連接端151~153會分別對準該凸塊區230的導電凸塊135~137。此時，該電路元件150的側邊下緣與該介電材料127之間仍可能存有空隙，為了使得該凸塊區230在該介電材料138尚未填入前能形成一個只包含該等導電凸塊135~137的密閉空間，本實施例在該電路元件150的側邊下緣施加該絕緣阻隔膠140於該線路區330的該介電材料127上，如第2A圖所示。藉此，在進行該介電材料160的鑄模成形時，該介電材料160受到該電路元件150、該介電材料127及該絕緣阻隔膠140的阻隔而不致進入上述的凸塊區密閉空間；如此之目的係為防止倘若該介電材料160填入該凸塊區230所將造成的充填不良，而形成氣泡或空洞(void)，這將非常不利於細間距線路或細間距凸塊的製作。該介電材料138的填入是施作於一相對空曠的空間，因此可克服氣泡或空洞的問題，且不需要求施作表面嚴格的平整度。該絕緣阻隔膠140的組成材質可以是流體狀或薄膜狀的樹脂材料。
第4A圖為根據本發明第二實施例的封裝結構200之剖面示意圖。該封裝結構200基本上相同於第2A圖的封裝結構100，其差異處在於：該封裝結構200在該介電材料160內進一步形成複數個金屬導柱191~194，使得該封裝結構100的電路布局及設計具有更大的彈性空間，可進一步製作堆疊封裝結構(例如，本說明書後面將會描述的第五實施例)。
第2B圖為根據本發明第三實施例的封裝結構300之剖面示意圖。該封裝結構300基本上相同於第2A圖的封裝結構100，其差異處在於：該封裝結構300在該導電圖案層120內進一步包含一阻隔框130，其設置於該凸塊區230與該線路區330之間，且該阻隔框130具有一線寬W，使得該電路元件150的邊緣位於其線寬 範圍內，如第3B圖所示。換言之，該導電圖案層120的平面圖可區分成三個部分：凸塊區230、阻隔框130及線路區330，其中該金屬阻隔框130圍繞該凸塊區230，該線路區330圍繞該阻隔框130。此外，第3B圖代表本實施例的該導電圖案層120在X-Y平面的剖面圖，該阻隔框130基本上是方框或矩形框，具有四個寬度為W的框邊，其框內為凸塊區230，框外則為線路區330。本發明對該阻隔框130的形狀不加以限制，端視後續將要置放的電路元件150的外型而定，使得該電路元件150的邊緣位於其框邊的寬度W範圍內，則該電路元件150與該阻隔框130能將該凸塊區230包覆起來。
該介電材料127形成於該導電圖案層120及該阻隔框130上。當該電路元件150設置於該導電圖案層120上的時候，其連接端151~153會分別對準該凸塊區230的導電凸塊135~137。此時，該電路元件150的底部會略高於該阻隔框130且略低於該介電材料127，使該電路元件150的側邊下緣與該介電材料127之間有些許的間距，再施加以絕緣阻隔膠140，如第2B圖所示，使得該凸塊區230在該介電材料138尚未填入前能形成一個只包含該等導電凸塊135~137的空間，從而在進行該介電材料160的鑄模成形時，該介電材料160受到該電路元件150、該介電材料127及該阻隔框130的阻隔而不致進入上述的凸塊區密閉空間。該阻隔框130在製程上與該等導電線路121~126及該等導電凸塊135~137一起形成於該導電圖案層120內的同一層。此外，由於金屬材質的該阻隔框130包圍該等導電凸塊135~137以及該電路元件150的連接端151~153，因此該阻隔框130亦對該凸塊區230具有電磁屏蔽(electromagnetic shield)的功效。
第4B圖為根據本發明第四實施例的封裝結構400之剖面示意圖。該封裝結構400基本上相同於第2B圖的封裝結構300，其差異處在於：該封裝結構400在該介電材料160內進一步形成複數個金屬導柱191~194，使得該封裝結構400的電路布局及設計具有更大的彈性空間，可進一步製作堆疊封裝結構。
以下說明本發明第一及第二實施例之封裝結構的製程。請參照第5A圖、第6A圖、第7圖、第8圖及第2A圖(以第一實施例的封裝結構100為例)，其分別對應上述第一實施例封裝結構100各個製程步驟的封裝結構之剖面圖。
首先，提供一承載板110，其為一導電材質的基板，例如，金屬基板或是表面鍍有金屬層的介電材質基板，用以承載或支持該封裝結構100的後續製程，例如，製作該封裝結構100的導電線路。上述基板的金屬成分包含鐵(Fe)、銅(Cu)、鎳(Ni)、錫(Sn)、鋁(Al)、鎳/金(Ni/Au)及其組合或合金，但本發明不以此為限。
接著，可藉由光微影(Photolithography)及電鍍(Electrolytic Plating)技術，形成一圖案化的細線路間距之金屬層於該承載板110上，以形成包含凸塊區230及線路區330的導電圖案層120，如第3A圖所示；也就是說，該線路區330為圍繞該凸塊區230的外環區域，該凸塊區230的框邊可以是方框或矩形框，其框外為線路區330。該凸塊區230包含導電凸塊135~137，該線路區330則包含導電線路121~126。接著，形成一層介電材料127於該承載板110上，使其包覆該導電圖案層120，再以光微影技術之顯影方式，或電漿蝕刻法，或噴砂技術選擇性移除該凸塊區230內的介電材料127，使得該介電材料127只包覆該等導電線路121~126，而不包覆該等導電凸塊135~137，如第5A圖所示。
接著，將該電路元件150設置於該導電圖案層120上。該電路元件150具有複數個連接端151~153，且當該電路元件150設置於該導電圖案層120上的時候，其外緣會坐落於其框邊的寬度W範圍內，且該等連接端151~153會分別對準該等導電凸塊135~137。此時，該電路元件150的側邊下緣會與該介電材料127些微接觸，二者之間仍可能存有空隙。由於本製程後續將會以類似鑄模方式形成介電材料160於該承載板110上，使其包覆該電路元件150及該線路區330，為了使得該凸塊區230在介電材料138尚未填入前能形成一個只包含該等導電凸塊135~137的密閉空間，以確保該介電材料160在此鑄模步驟進行過程中不會滲入上 述的密閉空間，本實施例藉由類似點膠或薄膜型材料真空貼合技術，施加樹脂材料於該線路區330上並圍繞該電路元件150的側邊下緣周邊，而形成如第6A圖所示的絕緣阻隔膠140。藉此，該電路元件150、該介電材料127及該絕緣阻隔膠140可形成一凸塊區密閉空間。
接著，如第7A圖所示，藉由封裝膠體的鑄模技術，例如，壓縮鑄模法、液態樹脂充填技術或介電材料真空壓膜技術，於該承載板110上形成包覆該電路元件150及該線路區330的介電材料160，其組成材質可以是酚醛基樹脂、環氧基樹脂、或矽基樹脂等絕緣材料。該介電材料160硬化後將與該電路元件150形成穩固的封裝結構。接著，移除該承載板110。如上所述，由於該電路元件150、該該線路區330的該介電材料127、以及該絕緣阻隔膠140的阻隔作用，該介電材料160在其鑄模過程中不會滲入該電路元件150的下方。此時該電路元件150下方只有排列成矩陣型式且彼此隔離的金屬孤島(例如，導電凸塊135與連接端151的組合結構為第一孤島，導電凸塊136與連接端152的組合結構為第二孤島，導電凸塊137與連接端153的組合結構為第三孤島)。在另一實施例中，該等導電凸塊135~137之間可以彼此連接，或是另以導電線路連接至該線路區330的導電線路121~126，本發明對此不加以限制。
在該承載板110移除之後，可將由該導電圖案層120、該電路元件150及該介電材料160所組成的剩餘部分形成如第7A圖所示的主體結構。將第7A圖的主體結構上下翻轉，並形成一層介電材料178於該主體結構上，使其包覆該電路元件150、該導電圖案層120及該凸塊區230。由於該電路元件150上方的金屬孤島彼此隔離，介電材料178可輕易地以類似點膠方式(或是使用液態樹脂充填方式、鑄模化合物模壓方式、或介電材料真空壓膜方式)而有效地充填於該電路元件150上方及圍繞該等金屬孤島而覆蓋該凸塊區230，而有效減小空穴(void)形成其中的可能性。接著，可再以光微影及金屬電鍍技術、雷射開口技術、或電漿蝕刻技術形成開 口，再施以金屬電鍍於上述開口，來製作以形成金屬柱狀物171~177，如第8A圖所示。藉此方法，該介電材料178不需選用成本較高的底部填充劑(Underfill)，只需一般性介電材料即可達到在電路元件150的各連接端151~153之間的充填效果，可降低封裝基板元件的製作成本。
接著，可利用增層技術來製作重佈線層180，如第2A圖所示。該重佈線層180包含導電線路181~187以及圍繞該等導電線路181~187的介電材料188。如第2A圖所示，透過該等金屬柱狀物171~177，該等導電凸塊135~137及該等導電線路121~126可連接到作為該封裝結構100下層電路布局的該重佈線層180，使得該等導電凸塊135~137可重新連接到其他合適的位置，且該等導電線路121~126可與該等導電線路181、182、186、187組合成更高密度的電路。
在第二實施例中，為使該封裝結構100的電路布局具有更大的彈性空間，複數個金屬導柱191、192、193、194可形成於該等導電線路121、123、124、126上，如第6B、7B、8B圖所示，此步驟可藉由例如光微影及電鍍技術來實現。該等金屬導柱191~194可形成於該電路元件150的設置之前，或是先設置該電路元件150再製作該等金屬導柱191~194，本發明對此不加以限制。在本實施例中，該介電材料160及該等金屬導柱191~194必須以研磨或電漿蝕刻技術移除其上半部，如第7B圖所示。
以下說明本發明第三及第四實施例之封裝結構的製程，其基本上相同於第一實施例的封裝結構100之製程，主要差異處請參照第5B圖，當形成於該承載板110上的金屬層被施以圖案化時，該導電圖案層120會包含如第3B圖所示的凸塊區230、阻隔框130及線路區330，其中，該金屬阻隔框130圍繞該凸塊區230，該線路區330圍繞該阻隔框130。該阻隔框130基本上是方框或矩形框，具有四個寬度為W的框邊，其框內為凸塊區230，框外則為線路區330；但本發明對此不加以限制，該阻隔框130亦可以是不規則形狀框，端視該電路元件150的形狀而定。此外，當該電路 元件150設置於該導電圖案層120上的時候，其外緣會坐落於該阻隔框130框邊的寬度W範圍內，使得該電路元件150的底面、位於該阻隔框130上的該介電材料127、以及該承載板110的頂面可形成一個含有該等導電凸塊135~137的空間，如第6C圖所示。如此，亦能在該絕緣阻隔膠140施加於該電路元件150的側邊下緣之後，該電路元件150、該阻隔框130上的該介電材料127、以及該絕緣阻隔膠140將可提供良好的阻隔作用，使得後續該介電材料160的鑄模過程不會滲入該電路元件150下方空間的效果。其餘與第一實施例封裝結構100相同的製程，請參閱前文所述，在此不再贅述。此外，該介電材料127只包覆該等導電線路121~126及部份或全部的該阻隔框130，而不包覆該等導電凸塊135~137，如第5B圖所示。
在第四實施例中，為使該封裝結構400的電路布局具有更大的彈性空間，複數個金屬導柱191、192、193、194可形成於該等導電線路121、123、124、126上，如第6D圖所示，此步驟可藉由例如光微影及電鍍技術來實現。該等金屬導柱191~194可形成於該電路元件150的設置之前，或是先設置該電路元件150再製作該等金屬導柱191~194，本發明對此不加以限制。在本實施例中，該介電材料160及該等金屬導柱191~194必須以研磨或電漿蝕刻技術移除其上半部，如第7B圖所示。
第9圖為根據本發明第五實施例的封裝結構500之剖面示意圖。該封裝結構500基本上係建構於第4A圖封裝結構200的基礎上，進一步於該介電材料160內設置另一電路元件550，其連接端551、552朝上連接該介電材料160上的另一層導電線路520。如此，本實施例的封裝結構可實現電路元件的多層堆疊結構，使封裝結構的電路布局及設計具有更大的彈性空間。
唯以上所述者，僅為本發明之較佳實施例，當不能以之限制本發明的範圍。即大凡依本發明申請專利範圍所做之均等變化及修飾，仍將不失本發明之要義所在，亦不脫離本發明之精神和範圍，故都應視為本發明的進一步實施狀況。
100‧‧‧封裝結構
120‧‧‧導電圖案層
121~126‧‧‧導電線路
135~137‧‧‧導電凸塊
140‧‧‧絕緣阻隔膠
150‧‧‧電路元件
151~153‧‧‧連接端
127、138、160、178、188‧‧‧介電材料
170‧‧‧導柱層
171~177‧‧‧金屬柱狀物
180‧‧‧重佈線層
181~187‧‧‧導電線路

Claims (12)

  1. 一種封裝結構，其包含：一導電圖案層，包含一凸塊區及一線路區，其中該凸塊區包含複數個導電凸塊及一圍繞該等導電凸塊的第一介電材料，該線路區包含複數個第一導電線路及一圍繞並覆蓋該等第一導電線路的第二介電材料；一電路元件，具有複數個連接端並設置於該凸塊區上，其中該等連接端與該等導電凸塊彼此對應；一絕緣阻隔膠，其形成於該第二介電材料上並圍繞該電路元件的側面下半部，且該絕緣阻隔膠包含一高於該電路元件底面的凸出部；以及一第三介電材料，包覆該電路元件及該線路區。
  2. 如申請專利範圍第1項所述之封裝結構，該導電圖案層進一步包含一阻隔框，其設置於該凸塊區與該線路區之間，且該阻隔框具有一線寬，使得該電路元件的邊緣位於該阻隔框的線寬範圍內。
  3. 如申請專利範圍第2項所述之封裝結構，其中，該阻隔框的組成材質為金屬或有機絕緣材料。
  4. 如申請專利範圍第1項所述之封裝結構，進一步包含複數個第一導電柱狀物，其形成於該等第一導電線路上並被該第三介電材料所包覆。
  5. 如申請專利範圍第1項所述之封裝結構，其中，該電路元件為半導體晶片或電子元件。
  6. 如申請專利範圍第1項所述之封裝結構，進一步包含：一導柱層，包含複數個第二金屬柱狀物及一圍繞該等第二金屬柱狀物的第四介電材料，其形成於該導電圖案層下方；以及一重佈線層，包含複數個第二導電線路以及一圍繞該等第二導電線路的第五介電材料，其形成於該導柱層下方。
  7. 一種封裝結構之製作方法，其步驟包含：(A)形成一導電圖案層於一承載板上，其中該導電圖案層包含一 凸塊區及一線路區，該凸塊區包含複數個導電凸塊，且該線路區包含複數個導電線路；(B)形成一第二介電材料，其包覆該等導電線路；(C)設置一具有複數個連接端的電路元件於該凸塊區上，使得該等連接端與該等導電凸塊彼此對應；(D)形成一絕緣阻隔膠於該第二介電材料上並圍繞該電路元件的側邊下緣；(E)形成一第三介電材料於該承載板上，使其包覆該電路元件及該線路區；(F)移除該承載板，並形成一第四介電材料於該導電圖案層及該電路元件上，使其圍繞該等導電凸塊及該電路元件的該等連接端；以及(G)形成複數個金屬柱狀物於該第四介電材料中，使其連接該等導電凸塊及該等導電線路。
  8. 如申請專利範圍第7項所述之製作方法，在步驟(D)之前進一步包含：(C1)形成複數個導電柱狀物於該等導電線路上。
  9. 如申請專利範圍第7項所述之製作方法，其中，該電路元件為半導體晶片或電子元件。
  10. 一種封裝結構之製作方法，其步驟包含：(A)形成一導電圖案層於一承載板上，其中該導電圖案層包含一凸塊區、一圍繞該凸塊區的金屬阻隔框、及一圍繞該金屬阻隔框的線路區，該凸塊區包含複數個導電凸塊，該線路區包含複數個導電線路，且該金屬阻隔框具有一線寬；(B)形成一第二介電材料，其包覆該金屬阻隔框及該等導電線路；(C)設置一具有複數個連接端的電路元件於該凸塊區及該金屬阻隔框上，使得該等連接端與該等導電凸塊彼此對應，且該電路元件的邊緣位於該金屬阻隔框的線寬範圍內；(D)形成一絕緣阻隔膠於該第二介電材料上並圍繞該電路元件的側邊下緣； (E)形成一第三介電材料於該承載板上，使其包覆該電路元件及該線路區；(F)移除該承載板，並形成一第四介電材料於該導電圖案層及該電路元件上，使其圍繞該等導電凸塊及該電路元件的該等連接端；以及(G)形成複數個金屬柱狀物於該第四介電材料中，使其連接該等導電凸塊及該等導電線路。
  11. 如申請專利範圍第10項所述之製作方法，在步驟(D)之前進一步包含：(C1)形成複數個導電柱狀物於該等導電線路上。
  12. 如申請專利範圍第11項所述之製作方法，其中，該電路元件為半導體晶片或電子元件。
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