JP5162226B2 - 配線基板及び半導体装置 - Google Patents
配線基板及び半導体装置 Download PDFInfo
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Description
図5は、本発明の第1の実施の形態に係る半導体装置の平面図であり、図6は、図5に示す半導体装置の断面図である。
図8は、本発明の第2の実施の形態に係る半導体装置の平面図である。図8において、第1の実施の形態の半導体装置10と同一構成部分には同一符号を付す。
図9は、本発明の第3の実施の形態に係る半導体装置の平面図である。図9において、第2の実施の形態の半導体装置70と同一構成部分には同一符号を付す。
図10は、本発明の第4の実施の形態に係る半導体装置の平面図である。図10において、Eは、半導体素子12と配線基板11との間に配設されるアンダーフィル樹脂13が供給される領域(以下、「アンダーフィル樹脂供給領域E」とする)を示している。また、図10において、第2の実施の形態の半導体装置70と同一構成部分には同一符号を付す。
図11は、本発明の第5の実施の形態に係る半導体装置の平面図である。図11において、第4の実施の形態の半導体装置95と同一構成部分には同一符号を付す。
図12は、本発明の第6の実施の形態に係る半導体装置の断面図である。図12において、第1の実施の形態の半導体装置10と同一構成部分には同一符号を付す。
図13は、本発明の第7の実施の形態に係る半導体装置の断面図である。図13において、第1の実施の形態の半導体装置10と同一構成部分には同一符号を付す。
11,21,122 配線基板
12,121 半導体素子
12−1,12−2,12−3,12−4 側面
12A〜12D 角
13 アンダーフィル樹脂
14 外部接続端子
16 バンプ
18 内部接続端子
22,23 パッド
25,34 内部接続用パッド
27,28 電子部品
31 配線基板本体
31A,35A 上面
31B 下面
33 配線パターン
34 内部接続用パッド
35 ソルダーレジスト
37,71,81,96,106 ダム
38 外部接続用パッド
41 接続部
43,44 開口部
45,46,47,51 溝部
48,52 第1の溝部
49,53 第2の溝部
56 電極パッド
61 切り欠き部
83,84,97,98 突出部
86,88 第1の突出部
86A,87A,88A,89A 側面
87,89 第2の突出部
97A,98A 内壁
A 半導体素子搭載領域
B,E アンダーフィル樹脂供給領域
C,F 方向
D1,D2,D3,D4,D5,D6,D7,D8,D9,D10,D11,D12,D13,D14 距離
Claims (6)
- 半導体素子が搭載される半導体素子搭載領域を有した配線基板本体と、
前記半導体素子搭載領域に対応する部分の前記配線基板本体の第1の面に設けられ、前記半導体素子がフリップチップ接続される接続部を有した配線パターンと、
前記配線基板本体の前記第1の面に設けられ、平面視した状態において、前記半導体素子搭載領域と略等しい大きさとされた開口部を有したソルダーレジストと、
前記半導体素子搭載領域を囲むように、前記ソルダーレジストの上面に設けられ、前記半導体素子と前記配線基板本体との隙間に配設されるアンダーフィル樹脂を堰き止めるダムと、を備えた配線基板であって、
前記配線基板と前記半導体素子との隙間に前記アンダーフィル樹脂を供給するためのアンダーフィル樹脂供給領域に対応しない部分の前記ソルダーレジストの側壁から前記ダムの内壁までの第2の距離の値を、前記アンダーフィル樹脂供給領域に対応する部分の前記ソルダーレジストの側壁から前記ダムの内壁までの第1の距離の値に対して連続的に小さくし、
前記ソルダーレジストの側壁には、前記アンダーフィル樹脂供給領域に対応する部分から前記アンダーフィル樹脂供給領域に対応しない部分にかけて平面視においてテーパー形状が形成されていることを特徴とする配線基板。 - 前記半導体素子は平面視四角形であり、
前記半導体素子の任意の一の角を構成する2つの側面と、前記2つの側面と対向する部分の前記ダムの内壁とで構成される溝部の一部が、前記アンダーフィル樹脂供給領域に対応し、
前記2つの側面に対応する部分の前記ソルダーレジストの側壁から前記ダムの内壁までの距離の値は、各々、前記第1の距離の値とされ、
前記半導体素子の他の2つの側面に対応する部分の前記ソルダーレジストの側壁から前記ダムの内壁までの距離の値は、各々、前記第1の距離の値に対して連続的に小さくなって前記第2の距離の値とされていることを特徴とする請求項1記載の配線基板。 - 前記半導体素子は平面視四角形であり、
前記半導体素子の任意の一の側面と、前記一の側面と対向する部分の前記ダムの内壁とで構成される溝部の一部が、前記アンダーフィル樹脂供給領域に対応し、
前記溝部の一部に対応する部分の前記ソルダーレジストの側壁から前記ダムの内壁までの距離の値は、前記第1の距離の値とされ、
前記溝部の一部の両側に対応する部分の前記ソルダーレジストの側壁から前記ダムの内壁までの距離の値は、前記第1の距離の値に対して連続的に小さくなって前記第2の距離の値とされていることを特徴とする請求項1記載の配線基板。 - 前記ダムよりも外側に位置する部分の前記配線基板本体に、他の配線基板を搭載するためのパッドを設けたことを特徴とする請求項1ないし3のうち、いずれか一項記載の配線基板。
- 前記第1の面とは反対側に位置する前記配線基板本体の第2の面に、前記配線パターン及び前記パッドと電気的に接続された外部接続用パッドを設けたことを特徴とする請求項4記載の配線基板。
- 請求項1ないし5のうち、いずれか一項記載の配線基板と、
前記接続部にフリップチップ接続された前記半導体素子と、
前記半導体素子と前記配線基板との隙間に配設されたアンダーフィル樹脂と、を備えたことを特徴とする半導体装置。
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JP2007321081A JP5162226B2 (ja) | 2007-12-12 | 2007-12-12 | 配線基板及び半導体装置 |
KR1020080125073A KR101578175B1 (ko) | 2007-12-12 | 2008-12-10 | 배선 기판 및 반도체 장치 |
US12/331,673 US20090154128A1 (en) | 2007-12-12 | 2008-12-10 | Wiring substrate and semiconductor device |
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JP5378707B2 (ja) * | 2008-05-29 | 2013-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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JP5814928B2 (ja) * | 2010-11-04 | 2015-11-17 | アルプス電気株式会社 | 電子部品モジュール |
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JP5902301B2 (ja) * | 2012-07-09 | 2016-04-13 | シャープ株式会社 | 発光装置、および照明装置 |
US8994155B2 (en) * | 2012-07-26 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices, methods of manufacture thereof, and packaging methods |
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JP2014044979A (ja) * | 2012-08-24 | 2014-03-13 | Ngk Spark Plug Co Ltd | 配線基板 |
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US8994176B2 (en) * | 2012-12-13 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for package with interposers |
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JP6464762B2 (ja) * | 2015-01-16 | 2019-02-06 | 凸版印刷株式会社 | 半導体パッケージ基板、および半導体パッケージと、半導体パッケージ基板の製造方法、および半導体パッケージの製造方法 |
TWI582916B (zh) * | 2015-04-27 | 2017-05-11 | 南茂科技股份有限公司 | 多晶片封裝結構、晶圓級晶片封裝結構及其製程 |
KR102412611B1 (ko) | 2015-08-03 | 2022-06-23 | 삼성전자주식회사 | 인쇄회로기판(pcb)과 그 제조방법, 및 그 pcb를 이용한 반도체 패키지 제조방법 |
TWI602275B (zh) * | 2016-10-14 | 2017-10-11 | 恆勁科技股份有限公司 | 封裝結構及其製作方法 |
US10460957B2 (en) * | 2017-01-31 | 2019-10-29 | Skyworks Solutions, Inc. | Control of under-fill using an encapsulant for a dual-sided ball grid array package |
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US11094658B2 (en) * | 2019-05-22 | 2021-08-17 | Lenovo (Singapore) Pte. Ltd. | Substrate, electronic substrate, and method for producing electronic substrate |
KR102430750B1 (ko) * | 2019-08-22 | 2022-08-08 | 스템코 주식회사 | 회로 기판 및 그 제조 방법 |
JP2021044362A (ja) | 2019-09-10 | 2021-03-18 | キオクシア株式会社 | 半導体装置 |
KR102562315B1 (ko) | 2019-10-14 | 2023-08-01 | 삼성전자주식회사 | 반도체 패키지 |
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CN1278402C (zh) * | 2000-06-16 | 2006-10-04 | 松下电器产业株式会社 | 电子器件的封装方法及电子器件封装体 |
JP3951966B2 (ja) * | 2003-05-30 | 2007-08-01 | セイコーエプソン株式会社 | 半導体装置 |
JP2006351559A (ja) | 2003-06-23 | 2006-12-28 | Shinko Electric Ind Co Ltd | 配線基板および配線基板への半導体チップ実装構造 |
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