KR101924321B1 - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR101924321B1
KR101924321B1 KR1020177031531A KR20177031531A KR101924321B1 KR 101924321 B1 KR101924321 B1 KR 101924321B1 KR 1020177031531 A KR1020177031531 A KR 1020177031531A KR 20177031531 A KR20177031531 A KR 20177031531A KR 101924321 B1 KR101924321 B1 KR 101924321B1
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South Korea
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layer
oxide
wiring
insulating layer
oxide semiconductor
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Expired - Fee Related
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Korean (ko)
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KR20170124636A (ko
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순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H01L27/124—
    • H01L27/1225—
    • H01L27/1248—
    • H01L29/78606—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
KR1020177031531A 2009-09-16 2010-08-20 반도체 장치 및 전자 기기 Expired - Fee Related KR101924321B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009214485 2009-09-16
JPJP-P-2009-214485 2009-09-16
PCT/JP2010/064543 WO2011033915A1 (en) 2009-09-16 2010-08-20 Semiconductor device and manufacturing method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177010461A Division KR20170046186A (ko) 2009-09-16 2010-08-20 반도체 장치 및 전자 기기

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187034167A Division KR20180128990A (ko) 2009-09-16 2010-08-20 반도체 장치

Publications (2)

Publication Number Publication Date
KR20170124636A KR20170124636A (ko) 2017-11-10
KR101924321B1 true KR101924321B1 (ko) 2018-12-03

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KR1020177031531A Expired - Fee Related KR101924321B1 (ko) 2009-09-16 2010-08-20 반도체 장치 및 전자 기기
KR1020257010694A Pending KR20250053962A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020187034167A Ceased KR20180128990A (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020197031424A Active KR102246529B1 (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020137019003A Expired - Fee Related KR101470811B1 (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020177010461A Ceased KR20170046186A (ko) 2009-09-16 2010-08-20 반도체 장치 및 전자 기기
KR1020227006353A Ceased KR20220031135A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020237039965A Ceased KR20230165355A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020127009411A Expired - Fee Related KR101730347B1 (ko) 2009-09-16 2010-08-20 반도체 장치 및 그 제작 방법
KR1020217012197A Ceased KR20210048590A (ko) 2009-09-16 2010-08-20 반도체 장치

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KR1020257010694A Pending KR20250053962A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020187034167A Ceased KR20180128990A (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020197031424A Active KR102246529B1 (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020137019003A Expired - Fee Related KR101470811B1 (ko) 2009-09-16 2010-08-20 반도체 장치
KR1020177010461A Ceased KR20170046186A (ko) 2009-09-16 2010-08-20 반도체 장치 및 전자 기기
KR1020227006353A Ceased KR20220031135A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020237039965A Ceased KR20230165355A (ko) 2009-09-16 2010-08-20 표시 장치
KR1020127009411A Expired - Fee Related KR101730347B1 (ko) 2009-09-16 2010-08-20 반도체 장치 및 그 제작 방법
KR1020217012197A Ceased KR20210048590A (ko) 2009-09-16 2010-08-20 반도체 장치

Country Status (5)

Country Link
US (5) US20110062433A1 (enExample)
JP (9) JP2011086921A (enExample)
KR (10) KR101924321B1 (enExample)
TW (8) TWI761829B (enExample)
WO (1) WO2011033915A1 (enExample)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
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CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
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KR101914026B1 (ko) 2009-09-24 2018-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
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