JP5551612B2 - 電解質膜のための標的をスパッタリングする方法 - Google Patents
電解質膜のための標的をスパッタリングする方法 Download PDFInfo
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- JP5551612B2 JP5551612B2 JP2010539844A JP2010539844A JP5551612B2 JP 5551612 B2 JP5551612 B2 JP 5551612B2 JP 2010539844 A JP2010539844 A JP 2010539844A JP 2010539844 A JP2010539844 A JP 2010539844A JP 5551612 B2 JP5551612 B2 JP 5551612B2
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- 238000000034 method Methods 0.000 title claims description 90
- 239000003792 electrolyte Substances 0.000 title claims description 63
- 238000004544 sputter deposition Methods 0.000 title claims description 31
- 239000012528 membrane Substances 0.000 title description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 37
- 229910001416 lithium ion Inorganic materials 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 229910052744 lithium Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 238000001771 vacuum deposition Methods 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 238000005546 reactive sputtering Methods 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- -1 phosphorus nitrides Chemical class 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- 239000011593 sulfur Substances 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052729 chemical element Inorganic materials 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical class [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 3
- 229910001386 lithium phosphate Inorganic materials 0.000 claims description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 3
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 claims description 3
- 239000002001 electrolyte material Substances 0.000 claims description 2
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 24
- 239000000203 mixture Substances 0.000 description 21
- 239000000919 ceramic Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000005284 excitation Effects 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 11
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910018068 Li 2 O Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 description 5
- 229910010500 Li2.9PO3.3N0.46 Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000012983 electrochemical energy storage Methods 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008450 motivation Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/14—Cells with non-aqueous electrolyte
- H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
- H01M6/188—Processes of manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
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- H01M10/058—Construction or manufacture
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Physical Vapour Deposition (AREA)
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- Battery Electrode And Active Subsutance (AREA)
Description
本出願は、2007年12月21日に出願された、名称「METHOD FOR SPUTTER TARGETS FOR ELECTROLYTE FILMS」の米国仮出願第61/016,038号に関連し、35U.S.C.§119の下において、該仮出願の利益を主張し、該仮出願は、その全体が本明細書に参考として援用される。
本発明は、薄膜電気化学エネルギの貯蔵および変換デバイスに使用するリチウムイオン薄膜電解質の作製に関する。
現在、リチウムイオン電解質層は、RFチューナおよびRF適合のネットワークと共に、スパッタ標的上の無線周波数(RF)励起(1MHz〜1GHz)を用いて、セラミックで絶縁体のスパッタ標的から堆積される。このアプローチの主な理由は、セラミック標的の組成または化学量論が、堆積されるリチウムイオン電解質層の化学量論と同一に、または少なくとも最も類似して作製され得るという事実にある。しかしながら、セラミックで絶縁体のスパッタ標的およびRFスパッタ方法の両方を用いることは、それらに関連する高コストと、堆積面積および堆積速度の制限と、ハードウェアの精巧さおよび困難さとにより、望ましくない場合がある。
(項目1)
リチウムイオン薄膜電解質を作製する方法であって、
伝導性スパッタ標的を提供することと、
真空蒸着チャンバを提供することと、
該伝導性スパッタ標的をスパッタリングすることと、
反応性スパッタ気体雰囲気においてリチウムイオン薄膜電解質を堆積させることと
を包含する、方法。
(項目2)
前記薄膜電解質は、リン酸リチウムオキシナイトライドを含む、項目1に記載の方法。
(項目3)
前記リチウムイオン薄膜電解質は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、項目1に記載の方法。
(項目4)
前記真空蒸着チャンバは、RF適合性ではない、項目1に記載の方法。
(項目5)
前記反応性スパッタ気体雰囲気は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、リチウム、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、項目1に記載の方法。
(項目6)
スパッタ堆積プロセス条件の下で、前記反応性スパッタ気体雰囲気に気体化学元素の形態で提供される前記少なくとも1つの元素を提供することをさらに包含する、項目5に記載の方法。
(項目7)
スパッタ堆積プロセス条件の下で、前記反応性スパッタ気体雰囲気に気体化合物の形態で提供される前記少なくとも1つの元素を提供することをさらに包含する、項目5に記載の方法。
(項目8)
前記伝導性スパッタ標的は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、リチウム、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、項目1に記載の方法。
(項目9)
前記伝導性スパッタ標的は、リチウムリン化物および亜リン化物(Li x P、ここで1≦x≦100)、リチウム窒化物および亜窒化物(Li x N、ここで3≦x≦100)、リン酸化物および亜酸化物(PO x 、ここでx≦2.5)、リン窒化物および亜窒化物(PN x 、ここでx≦1.7)、リチウム酸化物および亜酸化物(Li x O、ここで1≦x≦100)、ならびに元素のリンの群から選択される少なくとも1つの材料を含む、項目1に記載の方法。
(項目10)
1MHzと1GHzとの間の周波数範囲内の無線周波数(RF)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、項目1に記載の方法。
(項目11)
1Hzと1MHzとの間の周波数範囲内の交流(AC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、項目1に記載の方法。
(項目12)
直流(DC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、項目1に記載の方法。
(項目13)
パルス直流(pulsed DC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、項目1に記載の方法。
(項目14)
RF、AC、パルスDC、およびDCの組み合わせから成る混合電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、項目1に記載の方法。
(項目15)
前記伝導性スパッタ標的は、室温で10 −8 S/cm以上の電子伝導性を示す、項目1に記載の方法。
(項目16)
前記伝導性スパッタ標的は、室温で10 −4 S/cmを超える電子伝導性を示す、項目1に記載の方法。
(項目17)
前記伝導性スパッタ標的は、室温で1S/cmを超える電子伝導性を示す、項目1に記載の方法。
(項目18)
基板表面において前記伝導性スパッタ標的材料を薄膜電解質材料に変換することをさらに包含する、項目1に記載の方法。
(項目19)
前記薄膜電解質を堆積させるために2つ以上の伝導性スパッタ標的を用いることをさらに包含する、項目1に記載の方法。
(項目20)
成長膜領域に1以上の非スパッタ堆積層を提供することをさらに包含する、項目1に記載の方法。
(項目21)
交流周期方法で成長膜領域に1以上の非スパッタ堆積層を提供することをさらに包含する、項目1に記載の方法。
(項目22)
電気伝導性であるか絶縁性であるかのいずれかである材料供給源から前記非スパッタ堆積を提供することをさらに包含する、項目20に記載の方法。
(項目23)
前記伝導性スパッタ標的は、0.6cm〜5cmの厚さを備えている、項目1に記載の方法。
(項目24)
前記伝導性スパッタ標的は、標的タイルセグメントを備えている、項目1に記載の方法。
(項目25)
前記標的タイルセグメントは、単相材料、多相材料、材料複合物の群から選択される少なくとも1つの元素を含む、項目24に記載の方法。
(項目26)
前記標的タイルセグメントのうちの少なくとも1つは、300cm 2 より大きい項目24に記載の方法。
(発明の概要)
下記に、より詳細にそして例によって説明されるように、本発明の様々な局面および実施形態は、背景技術の欠損の中のいくつかおよび関連する産業において現れるニーズに対処する。従って、本発明は、例えば、スパッタ標的、ならびに関連技術の制限および不利な点による1以上の欠点または問題を実質的に除去する、スパッタ標的を形成する方法に関する。
本発明のこれらおよび他の局面は、添付の図面において例証される例示的実施形態に関連してより詳細にここで説明される。
Claims (25)
- リチウムイオン薄膜電解質を作製する方法であって、
室温で10−8S/cm以上の電子伝導性を有する、電子伝導性スパッタ標的を提供することと、
真空蒸着チャンバを提供することと、
該電子伝導性スパッタ標的をスパッタリングすることと、
反応性スパッタ気体雰囲気においてリチウムイオン薄膜電解質を堆積させることと
を包含する、方法。 - リチウムイオン薄膜電解質を作製する方法であって、
室温で10−8S/cm以上の電子伝導性を有する、電子伝導性スパッタ標的を提供することと、
真空蒸着チャンバを提供することと、
該電子伝導性スパッタ標的をスパッタリングすることと、
反応性スパッタ気体雰囲気においてリチウムイオン薄膜電解質を堆積させることと
を包含し、該薄膜電解質は、リン酸リチウムオキシナイトライドを含む、方法。 - 前記リチウムイオン薄膜電解質は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、請求項1または2に記載の方法。
- 前記真空蒸着チャンバは、RF適合性ではない、請求項1または2に記載の方法。
- 前記反応性スパッタ気体雰囲気は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、リチウム、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、請求項1または2に記載の方法。
- スパッタ堆積プロセス条件の下で、前記反応性スパッタ気体雰囲気に気体化学元素の形態で提供される前記少なくとも1つの元素を提供することをさらに包含する、請求項5に記載の方法。
- スパッタ堆積プロセス条件の下で、前記反応性スパッタ気体雰囲気に気体化合物の形態で提供される前記少なくとも1つの元素を提供することをさらに包含する、請求項5に記載の方法。
- 前記伝導性スパッタ標的は、酸素、窒素、フッ素、塩素、臭素、ヨウ素、硫黄、セレン、テルル、リン、ヒ素、アンチモン、ビスマス、鉛、炭素、水素、ケイ素、リチウム、ナトリウム、マグネシウム、およびジルコニウムの群から選択される少なくとも1つの元素を含む、請求項1または2に記載の方法。
- 前記伝導性スパッタ標的は、リチウムリン化物および亜リン化物(LixP、ここで1≦x≦100)、リチウム窒化物および亜窒化物(LixN、ここで3≦x≦100)、リン酸化物および亜酸化物(POx、ここでx≦2.5)、リン窒化物および亜窒化物(PNx、ここでx≦1.7)、リチウム酸化物および亜酸化物(LixO、ここで1≦x≦100)、ならびに元素のリンの群から選択される少なくとも1つの材料を含む、請求項1または2に記載の方法。
- 1MHzと1GHzとの間の周波数範囲内の無線周波数(RF)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、請求項1または2に記載の方法。
- 1Hzと1MHzとの間の周波数範囲内の交流(AC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、請求項1または2に記載の方法。
- 直流(DC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、請求項1または2に記載の方法。
- パルス直流(pulsed DC)電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、請求項1または2に記載の方法。
- RF、AC、パルスDC、およびDCの組み合わせから成る混合電力を用いて前記伝導性スパッタ標的に電圧を付加することをさらに包含する、請求項1または2に記載の方法。
- 前記伝導性スパッタ標的は、室温で10−4S/cmを超える電子伝導性を示す、請求項1または2に記載の方法。
- 前記伝導性スパッタ標的は、室温で1S/cmを超える電子伝導性を示す、請求項1または2に記載の方法。
- 基板表面において前記伝導性スパッタ標的材料を薄膜電解質材料に変換することをさらに包含する、請求項1または2に記載の方法。
- 前記薄膜電解質を堆積させるために2つ以上の伝導性スパッタ標的を用いることをさらに包含する、請求項1または2に記載の方法。
- 前記リチウムイオン薄膜電解質上に1以上の非スパッタ堆積物を堆積することをさらに包含する、請求項1または2に記載の方法。
- 1以上の非スパッタ堆積物を堆積することをさらに包含し、
前記リチウムイオン薄膜電解質と前記非スパッタ堆積物とは順に形成される、請求項1または2に記載の方法。 - 電気伝導性であるか絶縁性であるかのいずれかである材料供給源から前記非スパッタ堆積を提供することをさらに包含する、請求項19に記載の方法。
- 前記伝導性スパッタ標的は、0.6cm〜5cmの厚さを備えている、請求項1または2に記載の方法。
- 前記伝導性スパッタ標的は、標的タイルセグメントを備えている、請求項1または2に記載の方法。
- 前記標的タイルセグメントは、単相材料、多相材料、材料複合物の群から選択される少なくとも1つの元素を含む、請求項23に記載の方法。
- 前記標的タイルセグメントのうちの少なくとも1つは、300cm2より大きい請求項23に記載の方法。
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WO2009086038A1 (en) | 2009-07-09 |
TWI441937B (zh) | 2014-06-21 |
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TW200944608A (en) | 2009-11-01 |
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