TWI402370B - 濺鍍含高蒸氣壓材料之鍍膜的方法與裝置 - Google Patents
濺鍍含高蒸氣壓材料之鍍膜的方法與裝置 Download PDFInfo
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- TWI402370B TWI402370B TW099119097A TW99119097A TWI402370B TW I402370 B TWI402370 B TW I402370B TW 099119097 A TW099119097 A TW 099119097A TW 99119097 A TW99119097 A TW 99119097A TW I402370 B TWI402370 B TW I402370B
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- vapor pressure
- high vapor
- sputtering
- pressure material
- coating
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- 238000004544 sputter deposition Methods 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 25
- 239000000203 mixture Substances 0.000 title description 8
- 239000000463 material Substances 0.000 claims description 62
- 238000000576 coating method Methods 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 41
- 239000002131 composite material Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000011669 selenium Substances 0.000 claims description 13
- 239000011777 magnesium Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 7
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 3
- 238000005429 filling process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004073 vulcanization Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WGMIDHKXVYYZKG-UHFFFAOYSA-N aluminum copper indium(3+) selenium(2-) Chemical compound [Al+3].[Cu++].[Se--].[Se--].[Se--].[Se--].[In+3] WGMIDHKXVYYZKG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
本發明是有關於一種濺鍍裝置與方法，且特別是有關於一種濺鍍含高蒸氣壓材料(high vapor pressure material)之鍍膜的裝置與方法。
真空濺鍍法具產品高品質及大面積之特性，因此已成為目前大尺寸太陽電池板最常採用的鍍膜製程。但是，濺鍍過程中容易使得高蒸氣壓的成分逸散，且後續退火處理時也容易使高蒸氣壓的成分散失，造成薄膜成分各區域組成不均，進而影響產品品質。
因此在美國專利US 7,632,701 B2提到解決方法，是採用化學方式，額外增加硒化及硫化處理。該專利雖可針對高蒸氣成分藉由擴散以彌補製程中的散失。然而，多一道步驟就多一道風險。以HONDA公司推出的大面積銅銦鎵硒(Copper indium gallium diselenide，CIGS)太陽電池為例，其是以H2
Se氣體進行硒化，但是H2
Se本身具劇毒又易燃易爆，稍一不慎便釀成重大災害，因此不利量產。
此外，因為濺鍍靶材中含有高蒸氣壓成分時，容易在濺鍍過程中因為溫度因素逸散。致使膜的成份比例不準確，在膜結晶結構中形成空孔缺陷，從而造成材料性質不佳，進而影響產品品質。以半導體銅製程為例，美國專利公開號20090166181 A1有提到一種藉低蒸氣壓材料搭配穩定高蒸氣壓成分的化學方法，能避免高蒸氣壓成分的逸散。但是該專利所得到的銅鍍膜會有雜質成分，而影響鍍膜品質。
本發明提供一種濺鍍含高蒸氣壓材料之鍍膜的裝置，可製作出無雜相以及精確成分比例的含高蒸氣壓材料之鍍膜。
本發明另提供一種濺鍍含高蒸氣壓材料之鍍膜的方法，可省去外加的填補製程(如硒化或硫化之類的製程)。
本發明提出一種濺鍍含高蒸氣壓材料之鍍膜的裝置，包括一腔體、安裝在腔體內的一濺鍍槍、設置於濺鍍槍上的一複合靶材以及一基材承載台，其中上述複合靶材包括一主靶材以及數個小錠，這些小錠的材料是一高蒸氣壓材料，其是指在1000℃的蒸氣壓大於1×10-9
torr的材料。而基材承載台是相對上述複合靶材安裝在腔體內。
在本發明之一實施例中，上述裝置還包括一金屬網格，設置在基材承載台與複合靶材之間。
本發明另提出一種濺鍍含高蒸氣壓材料之鍍膜的方法，包括提供一濺鍍設備，其內部包括一複合靶材。然後，利用上述複合靶材進行濺鍍，以在一基材上形成一鍍膜，之後對鍍膜進行退火。上述複合靶材包括一主靶材以及數個小錠，這些小錠的材料是一高蒸氣壓材料，其是指在1000℃的蒸氣壓大於1×10-9
torr的材料。
在本發明之另一實施例中，在利用上述複合靶材進行濺鍍之前，更包括在上述複合靶材與一基材承載台之間設置一金屬網格。
在本發明之各實施例中，上述高蒸氣壓材料是選自包括鎂(Mg)、鋅(Zn)、鋰(Li)、錫(Sn)、硒(Se)、硫(S)及鋁(Al)等及其組合中的一種成分。
在本發明之各實施例中，上述複合靶材中的小錠是貼附在主靶材上。
在本發明之各實施例中，上述複合靶材中的小錠是鑲在主靶材中。
在本發明之各實施例中，上述金屬網格為平面結構或具多個凸部的結構，其中各凸部對應於各小錠的位置向基材承載台凸出。
基於上述，本發明之裝置與方法因為能準確控制高蒸氣壓材料在鍍膜中的比例，所以不需要另外增加一道填補製程，也能製作出無雜相的含高蒸氣壓材料之鍍膜。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
本發明所附圖式是用以詳細說明本發明之實施例，然而本發明可以許多不同形式來體現，不限於下列實施例。實際上提供這些實施例是為使本發明之揭露更詳盡且完整，以便將本發明之範疇完全傳達至所屬技術領域中具有通常知識者。在圖式中，為明確起見不按實際尺寸描繪各層以及區域的尺寸及相對尺寸。
在本文中，所謂的「高蒸氣壓材料」是指在約1000℃的蒸氣壓大於1×10-9
torr的材料。
圖1顯示依照本發明之第一實施例的一種濺鍍含高蒸氣壓材料之鍍膜的裝置之剖面示意圖。請參照圖1，第一實施例的裝置包括一腔體100、安裝在腔體100內的一濺鍍槍102、設置於濺鍍槍102上的一複合靶材104以及一基材承載台106。複合靶材104包括一主靶材108以及數個小錠(pellet)110，這些小錠110的材料是高蒸氣壓材料，譬如選自包括鎂(Mg)、鋅(Zn)、鋰(Li)、錫(Sn)、硒(Se)、硫(S)及鋁(Al)等及其組合中的一種成分。上述主靶材108的材料則根據所需鍍膜的成分而定；舉例來說，如果鍍膜的成分為銅銦鎵硒(Copper indium gallium diselenide，CIGS)，則主靶材108的材料可以是銅銦鎵硒或者銅銦鎵。而基材承載台106是相對上述複合靶材104安裝在腔體100內。
在第一實施例中，複合靶材104中的小錠110是貼附在主靶材108上，如圖2A所示之立體圖。另外，複合靶材104中的小錠110也可鑲在主靶材108中，如圖2B所示之立體圖。至於小錠110的數量可依照所需鍍膜的成分而定；小錠110或主靶材108的形狀則可依照基材承載台106上的基材112而定，例如基材112是矽晶圓的話，主靶材108的形狀可以是圓形的，然本發明並不侷限於此。
圖3A顯示依照本發明之第二實施例的一種濺鍍含高蒸氣壓材料之鍍膜的裝置之剖面示意圖，其中使用與第一實施例相同的元件符號來代表相同或類似的構件。
請參照圖3A，第二實施例與第一實施例之差異在於，還有一個設置在基材承載台106與複合靶材104之間的金屬網格(grid)300。由於金屬網格300能讓帶電粒子不直接撞擊基材112，所以能減少帶電粒子轟擊基材112造成鍍膜的缺陷，進而改善鍍膜的電性。在此情形下，感應電位會降低，連帶減緩複合靶材104之小錠110的耗損。
在第二實施例中，這層金屬網格300可直接架在濺鍍槍102上，或者用像圖3A另外用支架302放在腔體100內。金屬網格300可為平面結構，其上視圖如圖3B所示。
另外，第二實施例中的金屬網格也可有其他變形例，如圖4A所示，其中用支架402放在腔體100內的金屬網格400是具多個凸部404的結構，其立體圖如圖4B所示。其中，金屬網格400的各個凸部404譬如對應於各個小錠110的位置向基材承載台106凸出，如此可使濺鍍速率均一化。
根據上述第一與第二實施例的裝置，本發明還提出一一種濺鍍方法，是利用上述裝置進行濺鍍，以在基材(如圖1、3A或4A之112)上形成一鍍膜後，再對所述鍍膜進行退火。
經過以上製程將能得到含有準確比例的高蒸氣壓材料之鍍膜，以下列舉一實驗來驗證本發明的功效。
實驗
預定形成一層用於銅鎵硒(CGS)太陽電池的CGS鍍膜。首先，提供一個如圖1的裝置，然後用不同靶材進行濺鍍，再對濺鍍後的鍍膜進行450℃退火。在實驗中使用的靶材包括(1)一個直徑3吋的CuGaSe2
靶材、(2)一個直徑3吋的CuGaSe2
主靶材和一個直徑1cm的Se小錠所構成的複合靶材、(3)一個直徑3吋的CuGaSe2
主靶材和3個直徑1cm的Se小錠所構成的複合靶材。
退火後得到的鍍膜由EDS光譜分析組成份如圖5所示。由圖5可知，Se含量隨著小錠數量增加而增加。因此，可藉由控制小錠數量輕易達到準確控制高蒸氣壓材料在鍍膜中的比例。
以上實驗是以CGS太陽電池為例子，所以本發明基本上適於太陽電池之製作；舉例來說，上述含高蒸氣壓材料之鍍膜可以是銅銦鎵硒(CIGS)、銅銦硒(CIS)、銅鎵硒(CGS)、銅銦鋁硒(CIAS)、銅銦鎵硒硫(CIGASS)及銅鋅錫硫(CuZnSnS4
)...等。本發明的裝置與方法還能進一步應用在量子點太陽電池的製作，譬如將複合靶材中的小錠的材料以量子點材料取代。
另外，當本發明應用於半導體銅製程時，含高蒸氣壓材料成分以是鋁或錫等，用以輔助銅導線的附著性及降低電遷移率。
綜上所述，本發明之裝置與方法能在不增加填補製程(如硒化或硫化處理等)的情況下，準確控制高蒸氣壓材料在鍍膜中的比例，同時鍍膜中不會有雜相產生，所以本發明能以最直接最經濟的方法製作含高蒸氣壓材料之鍍膜。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．腔體
102．．．濺鍍槍
104．．．複合靶材
106．．．基材承載台
108．．．主靶材
110．．．小錠
112．．．基材
300、400．．．金屬網格
302、402．．．支架
404．．．凸部
圖1顯示依照本發明之第一實施例的一種濺鍍含高蒸氣壓材料之鍍膜的裝置之剖面示意圖。
圖2A與圖2B分別顯示第一實施例的不同類型之複合靶材的立體示意圖。
圖3A顯示依照本發明之第二實施例的一種濺鍍含高蒸氣壓材料之鍍膜的裝置之剖面示意圖。
圖3B是圖3A之金屬網格的上視圖。
圖4A是第二實施例的另一變形例的裝置之剖面示意圖。
圖4B是圖4A之金屬網格的立體圖。
圖5是實驗得到的組成份分析圖。
100．．．腔體
102．．．濺鍍槍
104．．．複合靶材
106．．．基材承載台
108．．．主靶材
110．．．小錠
112．．．基材
Claims (14)
- 一種濺鍍含高蒸氣壓材料之鍍膜的裝置，至少包括：一腔體；一濺鍍槍，安裝在該腔體內；一複合靶材，設置於該濺鍍槍上，其中該複合靶材包括一主靶材以及多數個小錠，該些小錠的材料是一高蒸氣壓材料，且該主靶材含有該高蒸氣壓材料，其中該高蒸氣壓材料是在1000℃的蒸氣壓大於1×10-9 torr的材料；以及一基材承載台，相對該複合靶材安裝在該腔體內。
- 如申請專利範圍第1項所述之濺鍍含高蒸氣壓材料之鍍膜的裝置，其中該高蒸氣壓材料是選自包括鎂(Mg)、鋅(Zn)、鋰(Li)、錫(Sn)、硒(Se)、硫(S)、鋁(Al)及其組合中的一種成分。
- 如申請專利範圍第1項所述之濺鍍含高蒸氣壓材料之鍍膜的裝置，其中該複合靶材中的該些小錠是貼附在該主靶材上。
- 如申請專利範圍第1項所述之濺鍍含高蒸氣壓材料之鍍膜的裝置，其中該複合靶材中的該些小錠是鑲在該主靶材中。
- 如申請專利範圍第1項所述之濺鍍含高蒸氣壓材料之鍍膜的裝置，更包括一金屬網格，設置在該基材承載台與該複合靶材之間。
- 如申請專利範圍第5項所述之濺鍍含高蒸氣壓材料 之鍍膜的裝置，其中該金屬網格為平面結構或具多個凸部的結構。
- 如申請專利範圍第6項所述之濺鍍含高蒸氣壓材料之鍍膜的裝置，其中各該凸部對應於各該小錠的位置向該基材承載台凸出。
- 一種濺鍍含高蒸氣壓材料之鍍膜的方法，包括：提供一濺鍍設備，其內部包括一複合靶材，該複合靶材包括一主靶材以及多數個小錠，該些小錠的材料是一高蒸氣壓材料，且該主靶材含有該高蒸氣壓材料，其中該高蒸氣壓材料是在1000℃的蒸氣壓大於1×10-9 torr的材料；利用該複合靶材進行濺鍍，以在一基材上形成一鍍膜；以及對該鍍膜進行退火。
- 如申請專利範圍第8項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中該高蒸氣壓材料是選自包括鎂(Mg)、鋅(Zn)、鋰(Li)、錫(Sn)、硒(Se)、硫(S)、鋁(Al)及其組合中的一種成分。
- 如申請專利範圍第8項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中該複合靶材中的該些小錠是貼附在該主靶材上。
- 如申請專利範圍第8項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中該複合靶材中的該些小錠是鑲在該主靶材中。
- 如申請專利範圍第8項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中在利用該複合靶材進行該濺鍍之前，更包括在該複合靶材與一基材承載台之間設置一金屬網格。
- 如申請專利範圍第12項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中該金屬網格為平面結構或具多個凸部的結構。
- 如申請專利範圍第13項所述之濺鍍含高蒸氣壓材料之鍍膜的方法，其中各該凸部對應於各該小錠的位置向該基材承載台凸出。
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| TWI480408B (zh) * | 2013-10-01 | 2015-04-11 | Nat Applied Res Laboratories | Magnetron sputtering gun device |
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| US4920094A (en) * | 1987-03-27 | 1990-04-24 | Nissin Electric Co., Ltd. | Process for producing superconducting thin films |
| US20020061452A1 (en) * | 2000-09-12 | 2002-05-23 | Hoya Corporation | Phase shift mask blank, phase shift mask, and method for manufacturing the same |
| US6451184B1 (en) * | 1997-02-19 | 2002-09-17 | Canon Kabushiki Kaisha | Thin film forming apparatus and process for forming thin film using same |
| US20060213762A1 (en) * | 2005-02-28 | 2006-09-28 | Nanoset Llc | Cylindrical sputtering apparatus |
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| US5397920A (en) * | 1994-03-24 | 1995-03-14 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
| US6210544B1 (en) * | 1999-03-08 | 2001-04-03 | Alps Electric Co., Ltd. | Magnetic film forming method |
| US20080105542A1 (en) * | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
| CN101903560B (zh) * | 2007-12-21 | 2014-08-06 | 无穷动力解决方案股份有限公司 | 用于电解质膜的溅射靶的方法 |
| JP5489859B2 (ja) * | 2009-05-21 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 導電膜及び導電膜の作製方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920094A (en) * | 1987-03-27 | 1990-04-24 | Nissin Electric Co., Ltd. | Process for producing superconducting thin films |
| US6451184B1 (en) * | 1997-02-19 | 2002-09-17 | Canon Kabushiki Kaisha | Thin film forming apparatus and process for forming thin film using same |
| US20020061452A1 (en) * | 2000-09-12 | 2002-05-23 | Hoya Corporation | Phase shift mask blank, phase shift mask, and method for manufacturing the same |
| US20060213762A1 (en) * | 2005-02-28 | 2006-09-28 | Nanoset Llc | Cylindrical sputtering apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI480408B (zh) * | 2013-10-01 | 2015-04-11 | Nat Applied Res Laboratories | Magnetron sputtering gun device |
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