JP4775256B2 - 液浸リソグラフィ装置用の減圧排出を含む環境システム - Google Patents
液浸リソグラフィ装置用の減圧排出を含む環境システム Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70816—Bearings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Description
Claims (18)
- デバイスステージによって保持されるデバイスと光学アセンブリとの間のギャップの環境を制御するための環境システムであって、
前記デバイスの近傍に位置付けられている流体バリアと、
前記ギャップを満たす液浸流体を送出し、前記デバイス及び前記デバイスステージの少なくとも一方と前記流体バリアとの間に直接に存在する液浸流体を回収する液浸流体システムと、
前記ギャップの圧力を前記流体バリア外部の圧力とほぼ同一にさせる圧力イコライザと、
前記デバイス及び前記デバイステーブルのうち少なくとも一方に対して前記流体バリアを支持するために、前記デバイス及び前記デバイステーブルのうち少なくとも一方と前記流体バリアとの間にベアリング流体を向かわせるベアリング流体源と、を備え、
前記流体バリアは、前記デバイスの近傍に位置付けられた一対の間隔をあけて並ぶ排出インレットと前記デバイスの近傍に位置付けられた一つのベアリングアウトレットとを含み、前記液浸流体システムは前記排出インレットと連通する低圧源を含み、前記ベアリング流体源は前記ベアリングアウトレットと連通する環境システム。 - 前記流体バリアは前記ギャップを取り囲み、且つ、前記流体バリアは流体蒸気を含む前記液浸流体が前記ギャップ近傍の領域から出てゆくことを抑制する請求項1に記載の環境システム。
- 前記流体バリアが前記デバイス近傍に位置付けられる排出インレットを含み、且つ、前記液浸流体システムが前記排出インレットと連通する低圧源を含む請求項1又は2に記載の環境システム。
- 前記ベアリングアウトレットが前記一対の排出インレットの間に位置付けられる請求項1〜3のいずれか一項に記載の環境システム。
- 前記一対の排出インレットが前記ベアリングアウトレットよりも前記ギャップの近くに位置付けられている請求項1〜3のいずれか一項に記載の環境システム。
- 前記圧力イコライザは前記流体バリアを通じて延在する通路である請求項1〜5のいずれか一項記載の環境システム。
- 像をデバイスに転写するための露光装置であって、前記露光装置は光学アセンブリと、前記デバイスを保持するデバイスステージと、前記光学アセンブリ及び前記デバイスの間のギャップの環境を制御する請求項1〜6のいずれか一項に記載の環境システムとを備える露光装置。
- 前記デバイスステージは、前記デバイスのデバイス露光面とほぼ面一であるステージ表面を含む請求項7に記載の露光装置。
- 基板を供給する工程と、請求項7又は8に記載の装置にて前記基板に像を転写する工程とを含むデバイスを製造するための方法。
- デバイス露光面を含むデバイスに像を転写するための露光装置であって、
前記デバイスの近傍に、光学アセンブリと前記デバイスとの間にギャップを有するように位置付けられる光学アセンブリと、
前記デバイスの近傍に位置付けられる流体バリア及び前記ギャップを満たす液浸流体を送出する液浸流体システムを含み、前記ギャップの環境を制御する環境システムと、
前記デバイス露光面とほぼ面一であるステージ表面を含み、前記デバイスを保持するデバイスステージと、
前記ギャップの圧力を前記流体バリア外部の圧力とほぼ同一にさせる圧力イコライザとを備え、
前記デバイスステージは、前記デバイスを保持するデバイスホルダと、前記ステージ表面を画成するガードと、前記デバイス露光面が前記ステージ表面とほぼ面一になるように、前記ステージホルダ及び前記ガードの一方を移動させる駆動アセンブリとを含む露光装置。 - 前記駆動アセンブリは前記ガードを前記デバイス及び前記デバイスホルダに対して移動させる請求項10に記載の露光装置。
- 前記駆動アセンブリは前記ガードに対して前記デバイスホルダ及び前記デバイスを移動させる請求項10に記載の露光装置。
- 前記ガードは移動されて、前記デバイスへのアクセスをもたらすことが可能である第1の部分を含む請求項11に記載の露光装置。
- デバイス露光面を含むデバイスに像を転写するための露光装置であって、
前記デバイスの近傍に、光学アセンブリと前記デバイスとの間にギャップを有するように位置付けられる光学アセンブリと、
前記デバイスの近傍に位置付けられる流体バリア及び前記ギャップを満たす液浸流体を送出する液浸流体システムを含み、前記ギャップの環境を制御する環境システムと、
デバイスを保持するデバイスステージであって、前記デバイス露光面とほぼ面一であるステージ表面を含むデバイスステージとを備え、
前記デバイスステージは、前記デバイスを保持するデバイスホルダと、前記ステージ表面を画成するガードと、前記デバイス露光面が前記ステージ表面とほぼ面一になるように、前記デバイスホルダに対して前記ガードを移動させる駆動アセンブリとを含み、
前記ガードは、移動されて、前記デバイスへのアクセスをもたらすことが可能である第1の部分を含む露光装置。 - 前記液浸流体システムは、前記デバイス及び前記デバイスステージの少なくとも一方と前記流体バリアとの間に直接存在する液浸流体を回収する請求項10〜14のいずれか一項に記載の露光装置。
- さらに、前記デバイス及び前記デバイステーブルのうち少なくとも一方に対して前記流体バリアを支持するために、前記デバイス及び前記デバイステーブルのうち少なくとも一方と前記流体バリアとの間にベアリング流体を向かわせるベアリング流体源を備える請求項10〜15に記載の露光装置。
- 基板を供給する工程と、請求項10〜16のいずれか一項に記載の装置にて前記基板に像を転写する工程とを含むデバイスを製造するための方法。
- デバイス露光面を含むデバイスに像を転写するための方法であって、
光学アセンブリを前記デバイスの近傍に、前記光学アセンブリと前記デバイスとの間にギャップを有するように位置付ける工程と、
前記デバイスの近傍に位置付けられる流体バリア及び前記ギャップを満たす液浸流体を送出する液浸流体システムを含む環境システムで、前記ギャップの環境を制御する工程と、
前記デバイス露光面とほぼ面一であるステージ表面を含むデバイスステージで、前記デバイスを保持する工程と、
前記デバイスステージは前記デバイスを保持するデバイスホルダと、前記ステージ表面を画成するガードと、前記ステージ表面が前記デバイス露光面とほぼ面一になるように前記デバイス及び前記デバイスホルダに対して前記ガードを移動する駆動アセンブリとを含み、前記ガードの第1の部分を移動してデバイスに対するアクセスが提供される方法。
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US46211203P | 2003-04-10 | 2003-04-10 | |
US60/462,112 | 2003-04-10 | ||
US48447603P | 2003-07-01 | 2003-07-01 | |
US60/484,476 | 2003-07-01 | ||
PCT/IB2004/002704 WO2004090634A2 (en) | 2003-04-10 | 2004-03-29 | Environmental system including vaccum scavange for an immersion lithography apparatus |
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JP2010026002A Division JP5152219B2 (ja) | 2003-04-10 | 2010-02-08 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2011097540A Division JP5550188B2 (ja) | 2003-04-10 | 2011-04-25 | 露光装置、及び露光方法 |
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JP2007528115A JP2007528115A (ja) | 2007-10-04 |
JP2007528115A5 JP2007528115A5 (ja) | 2010-04-08 |
JP4775256B2 true JP4775256B2 (ja) | 2011-09-21 |
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JP2010026002A Expired - Fee Related JP5152219B2 (ja) | 2003-04-10 | 2010-02-08 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2011097540A Expired - Fee Related JP5550188B2 (ja) | 2003-04-10 | 2011-04-25 | 露光装置、及び露光方法 |
JP2012083119A Expired - Fee Related JP5541309B2 (ja) | 2003-04-10 | 2012-03-30 | 露光装置及び露光方法 |
JP2013167890A Expired - Fee Related JP5692304B2 (ja) | 2003-04-10 | 2013-08-12 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2013272247A Expired - Lifetime JP5745611B2 (ja) | 2003-04-10 | 2013-12-27 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2014227827A Expired - Fee Related JP5949876B2 (ja) | 2003-04-10 | 2014-11-10 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2015218810A Expired - Fee Related JP6137276B2 (ja) | 2003-04-10 | 2015-11-06 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2016201561A Expired - Fee Related JP6332394B2 (ja) | 2003-04-10 | 2016-10-13 | 露光装置及び露光方法 |
JP2017229742A Pending JP2018028705A (ja) | 2003-04-10 | 2017-11-30 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
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JP2011097540A Expired - Fee Related JP5550188B2 (ja) | 2003-04-10 | 2011-04-25 | 露光装置、及び露光方法 |
JP2012083119A Expired - Fee Related JP5541309B2 (ja) | 2003-04-10 | 2012-03-30 | 露光装置及び露光方法 |
JP2013167890A Expired - Fee Related JP5692304B2 (ja) | 2003-04-10 | 2013-08-12 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2013272247A Expired - Lifetime JP5745611B2 (ja) | 2003-04-10 | 2013-12-27 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2014227827A Expired - Fee Related JP5949876B2 (ja) | 2003-04-10 | 2014-11-10 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2015218810A Expired - Fee Related JP6137276B2 (ja) | 2003-04-10 | 2015-11-06 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
JP2016201561A Expired - Fee Related JP6332394B2 (ja) | 2003-04-10 | 2016-10-13 | 露光装置及び露光方法 |
JP2017229742A Pending JP2018028705A (ja) | 2003-04-10 | 2017-11-30 | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
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EP (7) | EP2667252B1 (ja) |
JP (10) | JP4775256B2 (ja) |
KR (13) | KR101364889B1 (ja) |
CN (7) | CN101061429B (ja) |
HK (8) | HK1086637A1 (ja) |
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JP2017016158A (ja) * | 2003-09-03 | 2017-01-19 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
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CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100470367C (zh) | 2002-11-12 | 2009-03-18 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
KR20050085235A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
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