HK1194486A1 - Environmental system including vacuum scavenge for an immersion lithography apparatus - Google Patents

Environmental system including vacuum scavenge for an immersion lithography apparatus

Info

Publication number
HK1194486A1
HK1194486A1 HK14107893.7A HK14107893A HK1194486A1 HK 1194486 A1 HK1194486 A1 HK 1194486A1 HK 14107893 A HK14107893 A HK 14107893A HK 1194486 A1 HK1194486 A1 HK 1194486A1
Authority
HK
Hong Kong
Prior art keywords
system including
lithography apparatus
immersion lithography
including vacuum
environmental system
Prior art date
Application number
HK14107893.7A
Other languages
English (en)
Chinese (zh)
Inventor
Andrew J Hazelton
Michael Sogard
Original Assignee
株式會社尼康
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社尼康 filed Critical 株式會社尼康
Publication of HK1194486A1 publication Critical patent/HK1194486A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70816—Bearings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK14107893.7A 2003-04-10 2014-08-01 Environmental system including vacuum scavenge for an immersion lithography apparatus HK1194486A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46211203P 2003-04-10 2003-04-10
US48447603P 2003-07-01 2003-07-01

Publications (1)

Publication Number Publication Date
HK1194486A1 true HK1194486A1 (en) 2014-10-17

Family

ID=33162259

Family Applications (8)

Application Number Title Priority Date Filing Date
HK06106368.5A HK1086637A1 (en) 2003-04-10 2006-06-02 Environmental system including vaccum scavange for an immersion lithography apparatus
HK14103956.0A HK1190797A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14103957.9A HK1190798A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14107893.7A HK1194486A1 (en) 2003-04-10 2014-08-01 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK15109292.9A HK1208736A1 (en) 2003-04-10 2015-09-22 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK16104744.3A HK1216781A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16104745.2A HK1216782A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16111263.9A HK1223161A1 (zh) 2003-04-10 2016-09-26 包括用於沉浸光刻裝置的真空清除的環境系統

Family Applications Before (3)

Application Number Title Priority Date Filing Date
HK06106368.5A HK1086637A1 (en) 2003-04-10 2006-06-02 Environmental system including vaccum scavange for an immersion lithography apparatus
HK14103956.0A HK1190797A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14103957.9A HK1190798A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus

Family Applications After (4)

Application Number Title Priority Date Filing Date
HK15109292.9A HK1208736A1 (en) 2003-04-10 2015-09-22 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK16104744.3A HK1216781A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16104745.2A HK1216782A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16111263.9A HK1223161A1 (zh) 2003-04-10 2016-09-26 包括用於沉浸光刻裝置的真空清除的環境系統

Country Status (8)

Country Link
US (13) US7321415B2 (xx)
EP (7) EP2950148B1 (xx)
JP (10) JP4775256B2 (xx)
KR (13) KR101469405B1 (xx)
CN (7) CN101061429B (xx)
HK (8) HK1086637A1 (xx)
SG (6) SG141425A1 (xx)
WO (1) WO2004090634A2 (xx)

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US20110037959A1 (en) 2011-02-17
CN105700301A (zh) 2016-06-22
US20160085159A1 (en) 2016-03-24
JP2011166166A (ja) 2011-08-25
US20140320831A1 (en) 2014-10-30
KR101364889B1 (ko) 2014-02-19
CN103383528A (zh) 2013-11-06
KR20120061976A (ko) 2012-06-13
US20070132974A1 (en) 2007-06-14
JP2014007412A (ja) 2014-01-16
US8456610B2 (en) 2013-06-04
KR101599182B1 (ko) 2016-03-03
HK1086637A1 (en) 2006-09-22
CN104597717A (zh) 2015-05-06
EP2667253A1 (en) 2013-11-27
US20170235237A1 (en) 2017-08-17
SG2012050829A (en) 2015-07-30
EP2667252B1 (en) 2015-05-20
KR20050113673A (ko) 2005-12-02
KR101319152B1 (ko) 2013-10-17
US9244362B2 (en) 2016-01-26
EP2717098A1 (en) 2014-04-09
JP5692304B2 (ja) 2015-04-01
KR101280628B1 (ko) 2013-07-01
KR101469405B1 (ko) 2014-12-10
JP2015029153A (ja) 2015-02-12
JP2017016159A (ja) 2017-01-19
KR20130012977A (ko) 2013-02-05
SG2014015184A (en) 2015-06-29
US9658537B2 (en) 2017-05-23
KR20130103811A (ko) 2013-09-24

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200331