JP2018026555A - 堆積期間にわたる基板温度を変化させることによる界面反応の抑制 - Google Patents
堆積期間にわたる基板温度を変化させることによる界面反応の抑制 Download PDFInfo
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- JP2018026555A JP2018026555A JP2017148915A JP2017148915A JP2018026555A JP 2018026555 A JP2018026555 A JP 2018026555A JP 2017148915 A JP2017148915 A JP 2017148915A JP 2017148915 A JP2017148915 A JP 2017148915A JP 2018026555 A JP2018026555 A JP 2018026555A
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- 239000000758 substrate Substances 0.000 title claims abstract description 605
- 230000008021 deposition Effects 0.000 title claims abstract description 136
- 238000006243 chemical reaction Methods 0.000 title description 29
- 230000001629 suppression Effects 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 201
- 239000000463 material Substances 0.000 claims abstract description 168
- 238000000034 method Methods 0.000 claims abstract description 133
- 230000008569 process Effects 0.000 claims abstract description 62
- 238000000151 deposition Methods 0.000 claims description 192
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 185
- 238000000926 separation method Methods 0.000 claims description 101
- 238000010438 heat treatment Methods 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000010408 film Substances 0.000 description 152
- 210000002381 plasma Anatomy 0.000 description 51
- 239000007789 gas Substances 0.000 description 40
- 238000005137 deposition process Methods 0.000 description 37
- 238000000231 atomic layer deposition Methods 0.000 description 32
- 239000000376 reactant Substances 0.000 description 24
- 239000007788 liquid Substances 0.000 description 23
- 239000010937 tungsten Substances 0.000 description 23
- 229910052721 tungsten Inorganic materials 0.000 description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 18
- 239000012528 membrane Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000008016 vaporization Effects 0.000 description 14
- 150000004770 chalcogenides Chemical class 0.000 description 12
- 238000009834 vaporization Methods 0.000 description 12
- 238000002156 mixing Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000011068 loading method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000678 plasma activation Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
【解決手段】装置の第1ステーションに基板を提供し430、基板の温度を第1温度に調整し432、基板が第1ステーション内で第1温度である間に、基板上に材料の第1部分を堆積し434、基板を第2ステーションに移動させ436、(e)基板の温度を第2温度に調整し438、基板が第2温度である間に、基板上に材料の第2部分を堆積させる440。第1部分および第2部分は、材料の属性について異なる値を示す。装置およびシステムは、マルチステーション堆積装置と、1以上の工程を実行するための制御ロジックを有するコントローラと、を備える。
【選択図】図4
Description
半導体基板上に膜を堆積させるための動作は、一般に、図1に示すような基板処理装置で実行されうる。以下で詳述する図1の装置100は、真空ポンプ118によって真空に維持されうる内部空間内に単一の基板ホルダ108を備えた単一の処理チャンバ102を有する。基板ホルダ(すなわち、ペデスタル108)は、ペデスタルおよび基板を加熱しうる加熱素子110を有する。また、(例えば)膜前駆体、搬送ガスおよび/またはパージガスおよび/または処理ガス、二次反応物質などの供給のために、ガス供給システム101およびシャワーヘッド106が、チャンバに流体接続されている。処理チャンバ内でプラズマを生成するための装置も、図1に示されており、これについては、後に詳述する。いずれにせよ、後に詳述するように、図1に概略的に示した装置は、半導体基板にALDなどの膜堆積動作を実行するための基本的な機器を提供する。
上述のように、かかる堆積処理の例は、特に、CVD、PECVD、および、ALDを含む。一部のCVD処理は、膜前駆体および副生成物を形成する1または複数のガス反応物質をリアクタへ流すことによって基板表面上に膜を蒸着しうる。前駆体は、基板表面上へ運ばれて、そこで、基板によって吸着され、基板内に拡散され、表面からリアクタから除去される副生成物も生成する化学反応によって基板上に蒸着される。
1.第1前駆体への基板表面の暴露。
2.基板が配置された反応チャンバのパージ。
3.通例はプラズマおよび/または第2前駆体を用いる、基板表面の反応の活性化。
4.基板が配置された反応チャンバのパージ。
一部の堆積処理では、処理条件が、堆積膜の様々な属性(例えば、その物理的および/または化学的属性)に影響しうる。例えば、処理条件(特に、温度)は、組成(例えば、化学量論または他の成分(水素など)の追加)、光学属性(例えば、RIおよび/または吸収係数)、および/または、堆積膜の密度、ならびに、膜の降伏電圧および電気的属性(例えば、抵抗率)に影響しうる。多くの典型的な堆積処理において、処理条件は、例えば、膜の均一性、膜の深さ全体にわたる均質な膜属性(例えば、ウェットエッチング速度またはドライエッチング速度)、反復性、および/または、高スループットを提供するために、膜堆積処理全体を通して実質的に一定に維持される。しかしながら、本開示の主題である一部の堆積処理では、処理条件は、様々な属性の膜が製造される(すなわち、膜が、多層膜(例えば、二層、三層、四層、連続的に変化する層など)になる)ように、堆積中に変更されうる。
図4は、マルチステーション堆積装置内で様々な温度で基板上に材料を堆積させるための技術例のフローチャートを示す。ブロック430に見られるように、基板が、マルチステーション堆積装置の第1処理ステーション(すなわち「ステーション」)に提供されてよい。マルチステーションリアクタの各ステーションは、ペデスタルを有してよく、各ペデスタルは、基板を支持するよう構成された基板支持面を有してよい。いくつかの実施形態において、基板は、基板支持面に接触するように、第1ステーションに、そして、基板支持面上へ提供されてよいが、いくつかの他の実施形態において、基板は、非ゼロの距離だけ基板支持面から(例えば、上方に)離れるように、ペデスタルの持ち上げ機構(例えば、リフトピンなど)の上へ配置されてもよい。
上述のように、異なる温度で基板上に材料を堆積させると、異なる温度の各々で生成される膜の異なる部分に異なる属性を有する膜が形成される。図10は、異なる温度で生成された膜のウェットエッチング速度の差を示すグラフである。図10のグラフのx軸は、ペデスタル温度を示し、y軸は、膜の属性であるウェットエッチング速度(WER)を示す。同じ回数の堆積サイクルが、各ステーションで実行され、図10からわかるように、堆積温度が高くなるほど、膜のWERが増大した。
本明細書に記載の方法および技術は、半導体処理ツール(例えば、任意の適切なマルチステーション堆積装置)内で膜堆積を実行するための任意の適切なシステムで実行されてよい。半導体処理ツール内で2以上の温度で膜堆積を実行するためのシステムは、処理動作を達成するためのハードウェアと、本明細書に開示された処理技術に従って処理動作を制御するためのマシン読み取り可能な命令を有する(または、命令にアクセスできる)システムコントローラとを備える。
図2は、さらに、処理ツール200およびその処理ステーションの処理条件およびハードウェア状態を制御するために用いられるシステムコントローラ250を備えたシステムの一実施形態を示す。システムコントローラ250は、1または複数のメモリデバイス256と、1または複数のマスストレージデバイス254と、1または複数のプロセッサ252と、を備えてよい。プロセッサ252は、1または複数のCPU、ASIC、汎用コンピュータ、および/または、専用コンピュータ、1または複数のアナログおよび/またはデジタル入力/出力接続、1または複数のステッパモータコントローラボードなどを備えてよい。
本明細書に記載のシステムおよび装置は、上述のように異なる温度で材料層を堆積させるための技術を実施するために用いされてよい。いくつかのかかる実施形態において、マルチステーション半導体処理ツール内で膜堆積を実行するためのシステムが、ペデスタル内の加熱素子、および、異なる温度の2以上のステーションを有するよう構成されたマルチステーションリアクタなど、本明細書に記載のシステムの1または複数の態様を備えてよい。
Claims (20)
- マルチステーション堆積装置内で基板上に材料を堆積させる方法であって、
a)前記マルチステーション堆積装置の第1ステーションに基板を提供し、
b)前記基板と前記第1ステーション内のペデスタルとの間の熱伝導によって前記基板の温度を第1温度に調整し、
c)前記基板が前記第1ステーション内で前記第1温度である間に、前記基板上に前記材料の第1部分を堆積させ、
d)前記マルチステーション堆積装置内の第2ステーションに前記基板を搬送し、
e)前記基板と前記第2ステーション内のペデスタルとの間の熱伝導によって前記基板の温度を第2温度に調整し、
f)前記基板が前記第2温度である間に、前記基板上に前記材料の第2部分を堆積させること、
を備え、
前記第1部分および前記第2部分は、前記材料の属性について異なる値を示す、方法。 - 請求項1に記載の方法であって、
前記基板が前記第1温度である間に、前記基板上に前記材料を堆積させることは、属性の第1値を有する第1層として前記材料の前記第1部分を堆積させ、
前記基板が前記第2温度である間に、前記基板上に前記材料を堆積させることは、前記属性の第2値を有する第2層として前記材料の前記第2部分を堆積させる、方法。 - 請求項1に記載の方法であって、前記属性は、第1ウェットエッチング速度、第1組成、および、第1密度からなる群より選択される、方法。
- 請求項1に記載の方法であって、
(b)は、前記第1ステーションのペデスタル内の加熱素子を用いて、前記基板の温度を前記第1温度に調整することを含み、
(e)は、前記第2ステーションのペデスタル内の加熱素子を用いて、前記基板の温度を前記第2温度に調整することを含む、方法。 - 請求項1に記載の方法であって、さらに、
g)(f)の後に、前記マルチステーション堆積装置の第3ステーションに前記基板を提供し、
h)前記基板と前記第3ステーション内のペデスタルとの間の熱伝導によって前記基板の温度を第3温度に調整し、
i)前記基板が前記第3温度である間に、前記基板上に前記材料の第3部分を堆積させること、
を備える、方法。 - 請求項5に記載の方法であって、前記第3温度は、前記第1温度、前記第2温度、および、前記第1温度でも前記第2温度でもない温度からなる群より選択された温度である、方法。
- 請求項6に記載の方法であって、さらに、
j)(i)の後に、前記マルチステーション堆積装置の第4ステーションに前記基板を提供し、
k)前記基板と前記第4ステーション内のペデスタルとの間の熱伝導によって前記基板の温度を第4温度に調整し、
l)前記基板が前記第4温度である間に、前記基板上に前記材料の第4部分を堆積させること、
を備える、方法。 - 請求項7に記載の方法であって、前記第4温度は、前記第1温度、前記第2温度、前記第3温度、および、前記第1温度でも前記第2温度でも前記第3温度でもない温度からなる群より選択された温度である、方法。
- 請求項1に記載の方法であって、
(b)前記基板の温度を前記第1温度に調整することは、前記第1ステーションの前記ペデスタルの基板支持面から第1分離距離だけ前記基板を分離させることを含み、
前記方法は、さらに、(c)の後であって(d)の前に、前記第1ステーションの前記ペデスタルの前記基板支持面から第2分離距離だけ前記基板を分離させることによって、前記基板の温度を第3温度に調整することを備え、
前記方法は、さらに、(c)の後であって(d)の前に、前記基板が、前記第1ステーション内で前記第2分離距離で前記第3温度である間に、前記基板上に前記材料の第3部分を堆積させることを備え、
前記第3部分は、前記材料の前記第1部分および前記第2部分の一方または両方と異なる値の前記材料の前記属性を示す、方法。 - 請求項9に記載の方法であって、
(e)は、前記第2ステーション内の前記ペデスタルの基板支持面から第3分離距離だけ前記基板を分離させることによって、前記基板の温度を前記第2温度に調整することを含み、
前記方法は、さらに、(f)の後に、前記第2ステーション内の前記ペデスタルの前記基板支持面から第4分離距離だけ前記基板を分離させることによって、前記基板の温度を第4温度に調整することを備え、
前記方法は、さらに、(f)の後に、前記基板が、前記第2ステーション内で前記第4温度にある間に、前記基板上に前記材料の第4部分を堆積させることを備え、
前記第4部分は、前記材料の前記第1部分、前記第2部分、および、前記第3部分の1または複数と異なる値の前記材料の前記属性を示す、方法。 - 請求項9に記載の方法であって、前記第1分離距離は、前記基板が前記基板支持面に接触するように、実質的にゼロである、方法。
- 請求項9に記載の方法であって、(e)は、前記基板が静止したままで、前記基板から離れるように垂直に前記ペデスタルを移動させることによって、前記ペデスタルの前記基板支持面から前記第2分離距離だけ前記基板を分離させることを含む、方法。
- 請求項9に記載の方法であって、(e)は、前記ペデスタルが静止したままで、持ち上げ機構を用いて前記ペデスタルから離れるように垂直に前記基板を移動させることによって、前記ペデスタルの前記基板支持面から前記第2分離距離だけ前記基板を分離させることを含む、方法。
- 請求項1から13のいずれか一項に記載の方法であって、
(c)は、N1回の堆積サイクルにわたって前記基板上に前記材料の前記第1部分を堆積させることを含み、1堆積サイクルは、1ステーションで堆積される材料層の全厚の一部を集合的に堆積させる一連の処理工程であり、
(f)は、N2回の堆積サイクルにわたって前記基板上に前記材料の前記第2部分を堆積させることを含み、1堆積サイクルは、1ステーションで堆積される材料層の全厚の一部を集合的に堆積させる一連の処理工程である、方法。 - 請求項1から13のいずれか一項に記載の方法であって、
(c)は、期間t1中に前記基板上に前記材料の前記第1部分を堆積させることを含み、
(f)は、期間t2中に前記基板上に前記材料の前記第2部分を堆積させることを含む、方法。 - 請求項1から8のいずれか一項に記載の方法であって、さらに、(c)で前記材料の前記第1部分を堆積させる際に、前記基板を前記第1ステーションの前記ペデスタルの基板支持面に向かってまたは基板支持面から離れるように移動させることで、前記基板と前記ペデスタルとの間の分離距離を調整して、さらに、前記第1ステーション内の前記基板の温度を調整することを備える、方法。
- マルチステーション堆積装置であって、
処理チャンバと、
前記処理チャンバ内の第1処理ステーションであって、前記第1処理ステーション内に配置されている基板を加熱するよう構成されている第1加熱素子を有する第1ペデスタルを備える、第1処理ステーションと、
前記処理チャンバ内の第2処理ステーションであって、前記第2処理ステーション内に配置されている基板を加熱するよう構成されている第2加熱素子を有する第2ペデスタルを備える、第2処理ステーションと、
前記第1処理ステーションと前記第2処理ステーションとの間で1または複数の基板を移動させるための基板搬送装置と、
異なる温度で基板上に材料を堆積させるように前記マルチステーション堆積装置を制御するためのコントローラと、
を備え、
前記コントローラは、
a)前記マルチステーション堆積装置の前記第1ステーションに基板を提供し、
b)前記基板と前記第1ペデスタルとの間の熱伝導によって前記基板の温度を第1温度に調整し、
c)前記基板が前記第1ステーション内で前記第1温度である間に、前記基板上に前記材料の第1部分を堆積させ、
d)前記基板を前記第2ステーションに移動させ、
e)前記基板と前記第2ペデスタルとの間の熱伝導によって前記基板の温度を第2温度に調整し、
f)前記基板が前記第2温度である間に、前記基板上に前記材料の第2部分を堆積させるための制御ロジックを備え、
前記第1部分および前記第2部分は、前記材料の属性について異なる値を示す、装置。 - 請求項17に記載の装置であって、
各ペデスタルは、基板支持面を備え、前記基板支持面に前記基板を接触させるよう構成され、第1分離距離および第2分離距離だけ前記基板支持面から前記基板を分離させるよう構成され、
前記コントローラは、さらに、
前記基板を前記第1分離距離および前記第2分離距離に配置し、
前記マルチステーション堆積装置の前記第1ステーションで、(a)〜(c)、(e)、および、(f)を実行するための制御ロジックを備え、
(b)は、前記第1ステーションの前記ペデスタルの前記基板支持面から第1分離距離だけ前記基板を分離させることによって、前記基板の温度を前記第1温度に調整することを含み、
(c)は、基板が前記基板支持面から前記第1分離距離だけ分離されている間に、前記材料の前記第1部分を堆積させることを含み、
(e)は、前記第1ステーションの前記ペデスタルの前記基板支持面から第2分離距離だけ前記基板を分離させることによって、前記基板の温度を前記第2温度に調整することを含み、
(f)は、前記基板が前記第1ステーションの前記ペデスタルの前記基板支持面から前記第2分離距離だけ分離されている間に、前記基板上に前記材料を堆積させることを含む、装置。 - 請求項17に記載の装置であって、
各ペデスタルは、基板支持面を備え、前記基板支持面に前記基板を接触させるよう構成され、第1分離距離および第2分離距離だけ前記基板支持面から前記基板を分離させるよう構成され、
(b)は、前記基板が前記第1ステーションの前記ペデスタルの基板支持面から第1分離距離だけ分離されている間に、前記基板と前記第1ステーション内の前記ペデスタルとの間の熱伝導によって前記基板の温度を前記第1温度に調整することを含み、
前記コントローラは、さらに、
(c)の後であって(d)の前に、前記第1ステーションの前記ペデスタルの前記基板支持面から第2分離距離だけ前記基板を分離させることによって、前記基板の温度を第3温度に調整し、
(c)の後であって(d)の前に、前記基板が、前記第1ステーション内で第2分離距離で前記第3温度にある間に、前記基板上に前記材料の第3部分を堆積させるための制御ロジックを備え、
前記第3部分は、前記材料の前記第1部分および前記第2部分の一方または両方と異なる値の前記材料の前記属性を示す、装置。 - 請求項17から19のいずれか一項に記載の装置であって、前記第1加熱素子は、アルミニウムに埋め込まれた抵抗加熱素子または窒化アルミニウムに埋め込まれた加熱ワイヤの内の一方である、装置。
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US11075127B2 (en) | 2021-07-27 |
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