JP2009188424A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009188424A JP2009188424A JP2009115506A JP2009115506A JP2009188424A JP 2009188424 A JP2009188424 A JP 2009188424A JP 2009115506 A JP2009115506 A JP 2009115506A JP 2009115506 A JP2009115506 A JP 2009115506A JP 2009188424 A JP2009188424 A JP 2009188424A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- laser
- insulating film
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 489
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 120
- 239000010408 film Substances 0.000 claims description 857
- 239000000758 substrate Substances 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 88
- 238000004519 manufacturing process Methods 0.000 claims description 45
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 155
- 239000002585 base Substances 0.000 description 117
- 239000010410 layer Substances 0.000 description 96
- 230000010355 oscillation Effects 0.000 description 80
- 238000002425 crystallisation Methods 0.000 description 56
- 238000005530 etching Methods 0.000 description 53
- 230000003287 optical effect Effects 0.000 description 50
- 230000008025 crystallization Effects 0.000 description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 229910052710 silicon Inorganic materials 0.000 description 43
- 239000010703 silicon Substances 0.000 description 43
- 238000009826 distribution Methods 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 239000012535 impurity Substances 0.000 description 36
- 238000005247 gettering Methods 0.000 description 34
- 239000011521 glass Substances 0.000 description 31
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 239000007789 gas Substances 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 19
- 239000003550 marker Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000015654 memory Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 230000035882 stress Effects 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- 150000002894 organic compounds Chemical class 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052779 Neodymium Inorganic materials 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 229910052688 Gadolinium Inorganic materials 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052689 Holmium Inorganic materials 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000002223 garnet Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 229910052775 Thulium Inorganic materials 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000010365 information processing Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 235000018734 Sambucus australis Nutrition 0.000 description 4
- 244000180577 Sambucus australis Species 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 4
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 235000019837 monoammonium phosphate Nutrition 0.000 description 4
- 235000019796 monopotassium phosphate Nutrition 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 238000002076 thermal analysis method Methods 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 241000862969 Stella Species 0.000 description 2
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】島状の半導体領域と、前記島状の半導体領域の側面及び上面を覆って設けられたゲート絶縁膜と、前記ゲート絶縁膜を介して前記島状の半導体領域の前記側面及び前記上面を覆って設けられたゲート電極とを有し、前記島状の半導体領域の前記側面及び前記上面はチャネル形成領域として機能する半導体装置である。
【選択図】図22
Description
また同じ特性が得られることを前提に作製された複数のTFTにおいて、活性層中の粒界の有無によって特性がばらついたりする。
図47(B)に示すとおり、凸部6001、6002の上部において粒界6003が形成されている。本発明者らは、これはレーザー光の照射により一次的に半導体膜が溶融することで、絶縁膜の上部に位置していた半導体膜が凹部の底部方向に向かって体積移動し、そのため凸部の上に位置する半導体膜が薄くなり、応力に耐えられなくて粒界が生じたのではないかと考えた。そして、このように結晶化された半導体膜は、凸部の上部において粒界が選択的に形成される一方、凹部(点線で示す領域)6001、6002に位置する部分には粒界が形成されにくい。なお凹部は、凸部が形成されていない窪んだ領域を指す。
これによりレーザー光の走査方向に沿って結晶が成長し、結晶粒界又は結晶亜粒界がチャネル長方向と交差することを防ぐことができる。また、このとき、レーザー光又は強光の照射は被処理体の形成された基板を加熱しながら行ってもよい。
に凝集して固化する。その結果、凸部にある半導体膜の厚さは薄くなり、そこに応力歪みを集中させることができる。また開口部の側面は結晶方位をある程度規定する効力を持つ。開口部の側面の角度は基板表面に対して5〜120度、好ましくは80〜100度で形成する。レーザー光をチャネル長方向と平行な方向に走査することにより、その方向に延在する開口部に沿って、特定の結晶方位を優先的に配向させることができる。
以下、図面を参照して本発明の実施の態様について説明する。図1は本発明の結晶性半導体膜を形成する工程を説明する縦断面図である。
酸化窒化珪素膜はSiH4、N2O又はSiH4、NH3、N2Oを原料として用いプラズマCVD法で形成することができる。
の非晶質半導体膜204の厚さ、t02:開口部(凹部)の非晶質半導体膜204の厚さ、t11:第2絶縁膜202上(凸部)の結晶性半導体膜205の厚さ、t12:開口部(凹部)の結晶性半導体膜205の厚さ、d:第2絶縁膜202の厚さ(開口部の深さ)、W1:第2絶縁膜202の幅、W2:開口部の幅である。
、Nd:GsGG(ガドリニウム・スカンジウム・ガリウム・ガーネット)等の結晶が使用される。その他にも、連続発振可能な気体レーザー発振装置、固体レーザー発振装置を適用することもできる。連続発振固体レーザー発振装置としてはYAG、YVO4、YLF、YAlO3などの結晶にCr、Nd、Er、Ho、Ce、Co、Ti又はTmをドープした結晶を使ったレーザー発振装置を適用する。発振波長の基本波はドープする材料によっても異なるが、1μmから2μmの波長で発振する。5W以上のより高い出力を得る為には、ダイオード励起の固体レーザー発振装置をカスケード接続しても良い。
図31において示す斜視図は、基板5101上に第1絶縁膜5102と帯状にパターン形成された第2絶縁膜5103〜5105が形成された形態を示している。ここでは、第2絶縁膜による帯状のパターンが3本示されているが、勿論その数に限定されることはない。基板は市販の無アルカリガラス基板、石英基板、サファイア基板、単結晶又は多結晶半導体基板の表面を絶縁膜で被覆した基板、金属基板の表面を絶縁膜で被覆した基板を適用することができる。
酸化珪素はオルトケイ酸テトラエチル(Tetraethyl Ortho Silicate:TEOS)とO2とを混合しプラズマCVD法で形成することができる。酸化窒化珪素膜はSiH4、NH3、N2O又は、SiH4、N2Oを原料として用いプラズマCVD法で形成することができる。
或いは、Nd、Tm、Hoをドープしたロッドを用いた固体レーザー発振装置であり、特にYAG、YVO4、YLF、YAlO3などの結晶にNd、Tm、Hoをドープした結晶を使った固体レーザー発振装置にスラブ構造増幅器を組み合わせたものでも良い。そして、図中に矢印で示すように、線状の長手方向に対し交差する方向に走査する。この時、下地絶縁膜に形成される帯状のパターンの長手方向と平行な方向に走査することが最も望ましい。尚、ここでいう線状とは、短手方向の長さに対し、長手方向の長さの比が1対10以上のものをもって言う。
に集まる。それにより固化した状態では、図33で示すように表面がほぼ平坦になる。さらに結晶の成長端や結晶粒界又は結晶亜粒界は第2絶縁膜5103〜5105上(凸部上)に形成される(図中ハッチングで示す領域5110)。こうして結晶性半導体膜5107が形成される。
次に、図48を用いて、本発明で用いられるレーザー光の照射方法について説明する。
6106をエッチングし、下地膜6104の凹部に半導体膜6107が残るようにする。
本発明の結晶性半導体膜の形成において、実施の形態1乃至3で示すように非晶質半導体膜にレーザー光を照射して結晶化させても良いが、触媒作用のある金属を用いて非晶質半導体膜を結晶化した後さらにレーザー光を照射して溶融させ、再結晶化しても良い。
スピン塗布法による場合には酢酸ニッケル塩が5〜10ppmの水溶液を塗布して金属元素含有層210を形成する。勿論、触媒元素はNiに限定されるものではなく、他の公知の材料を用いても良い。
次に、本実施の形態において開口部を有する下地絶縁膜上に結晶性半導体膜を形成し、その開口部に充填された充填領域にチャネル形成領域が配設されるTFTを作製する一形態を図4乃至図11を用いて説明する。尚、各図面において、(A)は上面図、(B)以降はそれに対応する各部位の縦断面図を示す。
図12は低濃度ドレイン(LDD)構造を持ったnチャネル型マルチチャネルTFTと、pチャネル型マルチチャネルTFTとでCMOS構造の基本回路であるインバータ回路を構成する一例を示している。図12において、第2絶縁膜320、開口部321、島状の半導体膜322、323は実施の形態5と同様にして形成される。
実施の形態5で示すマルチチャネルTFTにおいて、ゲート電極の構成が異なる一例を図13により示す。尚、ゲート電極及びLDD領域の構成以外は、実施の形態5と同じであり、共通の符号を用いて示し、詳細な説明は省略する。
本発明は様々な半導体装置に適用できるものであり、実施の形態1乃至7に基づいて作製される表示パネルの形態を説明する。
さらに図24(B)に示すように画素電極517を用いて有機発光素子を形成することができる。
で形成される電子注入層兼発光層を積層させて形成することができる。Alq3は一重項励起状態からの発光(蛍光)を可能としている。
例えば、有機化合物層27として陽極側から、高分子系有機化合物のポリチオフェン誘導体(PEDOT)により正孔注入輸送層、α−NPDによる正孔注入輸送層、CBP+Ir(ppy)3による発光層、BCPによる正孔ブロック層、Alq3による電子注入輸送層を積層させても良い。正孔注入層をPEDOTに変えることにより、正孔注入特性が改善され、発光効率を向上させることができる。
本発明を用いて様々な装置を完成させることができる。その一例は、携帯情報端末(電子手帳、モバイルコンピュータ、携帯電話等)、ビデオカメラ、デジタルカメラ、パーソナルコンピュータ、テレビ受像器、投影型表示装置等が挙げられる。それらの一例を図28、図29に示す。
本実施の形態では、図1に示した第2絶縁膜202を形成するにあたって、ガラス基板をエッチングストッパーとして用い、第2絶縁膜202上に第1絶縁膜201に相当する絶縁膜を形成する例を示す。
また、第1の半導体膜の膜厚と第2の半導体膜の膜厚との和は30〜200nm、例えば50nmとすればよい。
また、ゲッタリング用の第1半導体膜6358は、希ガス元素を添加する場合、結晶性半導体膜(LC後)6355にダメージを与えないように保護する効果も有している。
このゲッタリングにより、含まれる不純物元素がほとんど存在しない、即ち膜中の不純物元素濃度が1×1018atoms/cm3以下、望ましくは1×1017atoms/cm3以下になるような結晶性半導体膜(ゲッタリング後)6360が形成される。
に示すように、凸部6350の上面を露出させる程度に結晶性半導体膜(ゲッタリング後)6360をエッチングし、エッチング後の結晶性半導体膜6361が凹部に形成される。そして、凸部6350をエッチングすることでアイランド6362が形成される。
を設けて、レーザー光のエネルギー密度を調整するようにしても良い。
ダンパーは、反射光を吸収させる性質を有していることが望ましく、ダンパー内に冷却水を循環させておき、反射光の吸収により隔壁の温度が上昇するのを防ぐようにしても良い。また、ステージ6157に基板を加熱するための手段(基板加熱手段)を設けるようにしても良い。
合成前のレーザービームの短軸方向の長さを37μm、長軸方向の長さを410μmとし、中心間の距離を192μmとしたときの、B−B’、C−C’におけるエネルギー密度は、それぞれ図67(A)、図67(B)に示すような分布を有している。B−B’の方がC−C’よりも弱冠小さくなっているが、ほぼ同じ大きさとみなすことができ、合成前のレーザービームのピーク値の1/e2のエネルギー密度を満たしている領域における、合成されたレーザービームの形状は、線状と言い表すことができる。
例えば、被処理物6423に最も近いシリンドリカルレンズ6417、6418の焦点距離を20mmとし、シリンドリカルレンズ6419〜6422の焦点距離を150mmとする。そしてシリンドリカルレンズ6417、6418から被処理物400へのレーザー光の入射角は、本実施例では25°とし、シリンドリカルレンズ6419〜6422からシリンドリカルレンズ6417、6418へのレーザー光の入射角を10°とするように各レンズを設置する。なお、戻り光を防ぎ、また均一な照射を行なうために、レーザー光の基板への入射角度を0°より大きく、望ましくは5〜30°に保つのが望ましい。
Y=60−293X+340X2(Xは2つの解のうち大きい方とする)
なお、発光装置とは、基板上に形成された発光素子を該基板とカバー材の間に封入した表示用パネルおよび該表示用パネルにTFT等を実装した表示用モジュールを総称したものである。なお、発光素子は、電場を加えることで発生するルミネッセンス(Electro Luminescence)が得られる有機化合物を含む層(発光層)
と陽極と、陰極とを有する。
この容量用の半導体膜6813とゲート絶縁膜と容量用配線6809とが重なっている部分が駆動用TFT6802のゲート電圧を保持するための容量として機能する。また、容量用配線6809と電源線6811は、間に層間絶縁膜(図示せず)を間に挟んで重なっている。この容量用配線6809と、層間絶縁膜と、電源線6811とが重なり合っている部分も、駆動用TFT6802のゲート電圧を保持するための容量として機能させることは可能である。
そして、第2の絶縁膜7707上に第2のTFT7708が形成されている。なお、第2の絶縁膜7707のチャネル形成領域のチャネル幅は、1〜2ミクロン程度である。
第1層目はワード処理系の回路が形成された層であり、第2層目は3層目のRAMに対応したプロセッサが各種論理回路によって形成された層であり、第3層目はRAMセルが形成された層である。第2層目のプロセッサと3層目のRAMセルとによって連想メモリ(CAM)が形成される。さらに、第4層目はデータ用のRAM(データRAM)であり、2層目及び3層目で形成される連想メモリと共存している。
Claims (1)
- 薄膜トランジスタを有する半導体装置の作製方法であって、
絶縁表面を有する基板上に開口部が設けられた絶縁膜を形成し、
前記絶縁膜上及び該開口部に非晶質半導体膜を形成し、
前記非晶質半導体膜にレーザー光を照射し、前記非晶質半導体膜を結晶化させて結晶性半導体膜を形成し、
前記絶縁膜上に残存する結晶性半導体膜を除去し、
前記結晶性半導体膜のうち、前記薄膜トランジスタのチャネル形成領域となる部位の周辺に存在する前記絶縁膜を除去することによって、前記部位の側面を露出させ、
前記部位の側面及び上面に接するゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成することを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009115506A JP5530656B2 (ja) | 2002-01-28 | 2009-05-12 | 半導体装置、モジュール及び電子機器 |
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002019286 | 2002-01-28 | ||
JP2002019286 | 2002-01-28 | ||
JP2002027382 | 2002-02-04 | ||
JP2002027492 | 2002-02-04 | ||
JP2002027382 | 2002-02-04 | ||
JP2002027492 | 2002-02-04 | ||
JP2002118154 | 2002-04-19 | ||
JP2002118154 | 2002-04-19 | ||
JP2009115506A JP5530656B2 (ja) | 2002-01-28 | 2009-05-12 | 半導体装置、モジュール及び電子機器 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003018236A Division JP4397599B2 (ja) | 2002-01-28 | 2003-01-28 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012156153A Division JP5586665B2 (ja) | 2002-01-28 | 2012-07-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009188424A true JP2009188424A (ja) | 2009-08-20 |
JP5530656B2 JP5530656B2 (ja) | 2014-06-25 |
Family
ID=29554342
Family Applications (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009115506A Expired - Lifetime JP5530656B2 (ja) | 2002-01-28 | 2009-05-12 | 半導体装置、モジュール及び電子機器 |
JP2012156153A Expired - Fee Related JP5586665B2 (ja) | 2002-01-28 | 2012-07-12 | 半導体装置 |
JP2014004910A Expired - Fee Related JP5913390B2 (ja) | 2002-01-28 | 2014-01-15 | 半導体装置 |
JP2015102714A Expired - Fee Related JP5997802B2 (ja) | 2002-01-28 | 2015-05-20 | 半導体装置 |
JP2016148785A Withdrawn JP2016213496A (ja) | 2002-01-28 | 2016-07-28 | 半導体装置 |
JP2017240156A Expired - Lifetime JP6526778B2 (ja) | 2002-01-28 | 2017-12-15 | 表示パネル、電子機器 |
JP2018095960A Withdrawn JP2018148224A (ja) | 2002-01-28 | 2018-05-18 | 半導体装置 |
JP2019090636A Expired - Lifetime JP6709873B2 (ja) | 2002-01-28 | 2019-05-13 | 表示パネル、電子機器 |
JP2019126127A Withdrawn JP2019197908A (ja) | 2002-01-28 | 2019-07-05 | 半導体装置 |
JP2021010963A Expired - Lifetime JP7062799B2 (ja) | 2002-01-28 | 2021-01-27 | 表示パネル |
JP2021014492A Withdrawn JP2021101464A (ja) | 2002-01-28 | 2021-02-01 | 半導体装置 |
Family Applications After (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012156153A Expired - Fee Related JP5586665B2 (ja) | 2002-01-28 | 2012-07-12 | 半導体装置 |
JP2014004910A Expired - Fee Related JP5913390B2 (ja) | 2002-01-28 | 2014-01-15 | 半導体装置 |
JP2015102714A Expired - Fee Related JP5997802B2 (ja) | 2002-01-28 | 2015-05-20 | 半導体装置 |
JP2016148785A Withdrawn JP2016213496A (ja) | 2002-01-28 | 2016-07-28 | 半導体装置 |
JP2017240156A Expired - Lifetime JP6526778B2 (ja) | 2002-01-28 | 2017-12-15 | 表示パネル、電子機器 |
JP2018095960A Withdrawn JP2018148224A (ja) | 2002-01-28 | 2018-05-18 | 半導体装置 |
JP2019090636A Expired - Lifetime JP6709873B2 (ja) | 2002-01-28 | 2019-05-13 | 表示パネル、電子機器 |
JP2019126127A Withdrawn JP2019197908A (ja) | 2002-01-28 | 2019-07-05 | 半導体装置 |
JP2021010963A Expired - Lifetime JP7062799B2 (ja) | 2002-01-28 | 2021-01-27 | 表示パネル |
JP2021014492A Withdrawn JP2021101464A (ja) | 2002-01-28 | 2021-02-01 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7749818B2 (ja) |
JP (11) | JP5530656B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013504882A (ja) * | 2009-09-16 | 2013-02-07 | メルク パテント ゲーエムベーハー | 有機エレクトロルミネセンス素子 |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6521994B1 (en) * | 2001-03-22 | 2003-02-18 | Netlogic Microsystems, Inc. | Multi-chip module having content addressable memory |
JP3977038B2 (ja) * | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
EP1326273B1 (en) * | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6933527B2 (en) | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
JP4011344B2 (ja) * | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003204067A (ja) * | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
TWI272666B (en) | 2002-01-28 | 2007-02-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4137460B2 (ja) * | 2002-02-08 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6884668B2 (en) * | 2002-02-22 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
KR100979926B1 (ko) * | 2002-03-05 | 2010-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체소자 및 그것을 사용한 반도체장치 |
US6847050B2 (en) * | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
US6906343B2 (en) * | 2002-03-26 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US6875998B2 (en) * | 2002-03-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing the same, and method of designing the same |
US6930326B2 (en) * | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
TWI288443B (en) | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
JP2004071696A (ja) * | 2002-08-02 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US7012583B2 (en) * | 2003-02-07 | 2006-03-14 | Shimadzu Corporation | Apparatus and method for testing pixels of flat panel display |
JP4059104B2 (ja) * | 2003-02-28 | 2008-03-12 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ回路、cmosインバータ回路、電気光学装置、電子機器 |
US7220627B2 (en) * | 2003-04-21 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process |
US7318866B2 (en) * | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
US7311778B2 (en) | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
JP2005294630A (ja) * | 2004-04-01 | 2005-10-20 | Seiko Epson Corp | 半導体装置、電気光学装置、集積回路及び電子機器 |
US7416924B2 (en) * | 2004-11-11 | 2008-08-26 | Samsung Electronics Co., Ltd. | Organic light emitting display with single crystalline silicon TFT and method of fabricating the same |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US7710739B2 (en) | 2005-04-28 | 2010-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US7439108B2 (en) * | 2005-06-16 | 2008-10-21 | International Business Machines Corporation | Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same |
US7358164B2 (en) * | 2005-06-16 | 2008-04-15 | International Business Machines Corporation | Crystal imprinting methods for fabricating substrates with thin active silicon layers |
EP1922745A1 (en) * | 2005-08-16 | 2008-05-21 | The Trustees of Columbia University in the City of New York | Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers |
US7700463B2 (en) * | 2005-09-02 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7572741B2 (en) | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
KR101287314B1 (ko) | 2005-12-05 | 2013-07-17 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 막 처리 시스템과 방법, 및 박막 |
JP2007242816A (ja) * | 2006-03-07 | 2007-09-20 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンスデバイス及びその製造方法 |
US7863612B2 (en) | 2006-07-21 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and semiconductor device |
JP2008252068A (ja) * | 2007-03-08 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP5371144B2 (ja) | 2007-06-29 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法、並びに電子機器 |
US8048749B2 (en) * | 2007-07-26 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5205012B2 (ja) * | 2007-08-29 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 表示装置及び当該表示装置を具備する電子機器 |
TW200942935A (en) | 2007-09-21 | 2009-10-16 | Univ Columbia | Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same |
KR20100074179A (ko) | 2007-09-25 | 2010-07-01 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 측방향으로 결정화된 박막상에 제조된 박막 트랜지스터 장치에 높은 균일성을 생산하기 위한 방법 |
US8012861B2 (en) * | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
CN101919058B (zh) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
WO2009111340A2 (en) | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
US8802580B2 (en) | 2008-11-14 | 2014-08-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
WO2011056787A1 (en) * | 2009-11-03 | 2011-05-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
KR20230141883A (ko) | 2010-02-05 | 2023-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
US8897049B2 (en) | 2011-05-13 | 2014-11-25 | Semiconductor Energy Laboratories Co., Ltd. | Semiconductor device and memory device including semiconductor device |
KR102103913B1 (ko) | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
WO2016034988A1 (en) * | 2014-09-05 | 2016-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
US10241418B2 (en) * | 2014-12-01 | 2019-03-26 | Asml Netherlands B.V. | Method and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process, lithographic processing system including diagnostic apparatus |
US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10325779B2 (en) * | 2016-03-30 | 2019-06-18 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
JP7085422B2 (ja) * | 2018-06-28 | 2022-06-16 | Tianma Japan株式会社 | 表示装置 |
JP7262210B2 (ja) * | 2018-11-21 | 2023-04-21 | 東京エレクトロン株式会社 | 凹部の埋め込み方法 |
TWI706205B (zh) * | 2019-02-19 | 2020-10-01 | 陳冠宇 | 有機發光顯示裝置 |
KR20220022016A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법 |
FR3126169A1 (fr) * | 2021-08-12 | 2023-02-17 | Stmicroelectronics (Tours) Sas | Procédé de fabrication de composants radiofréquence |
JP7495967B2 (ja) | 2022-09-09 | 2024-06-05 | 本田技研工業株式会社 | スイングアーム構造 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132303A (ja) * | 1991-11-29 | 1994-05-13 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
JPH06244208A (ja) * | 1993-02-19 | 1994-09-02 | Nippondenso Co Ltd | 半導体装置の製造方法 |
JP2001298194A (ja) * | 2000-04-14 | 2001-10-26 | Nec Corp | 電界効果型トランジスタ及びその製造方法 |
JP2001305584A (ja) * | 2000-04-25 | 2001-10-31 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2001330860A (ja) * | 2000-02-28 | 2001-11-30 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US20020003256A1 (en) * | 2000-02-14 | 2002-01-10 | Mitsubishi Denki Kabushiki Kaisha | MOS semiconductor device and method of manufacturing the same |
Family Cites Families (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4385937A (en) | 1980-05-20 | 1983-05-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Regrowing selectively formed ion amorphosized regions by thermal gradient |
JPS5723217A (en) | 1980-07-18 | 1982-02-06 | Fujitsu Ltd | Manufacture of semiconductor device |
US4330363A (en) | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
JPS5815226A (ja) * | 1981-07-20 | 1983-01-28 | Nec Corp | レ−ザアニ−リング法 |
JPS5886717A (ja) | 1981-11-18 | 1983-05-24 | Nec Corp | 単結晶シリコン膜形成法 |
JPS58130517A (ja) | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 単結晶薄膜の製造方法 |
JPS58151042A (ja) | 1982-03-03 | 1983-09-08 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60142567A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPS60143666A (ja) * | 1983-12-29 | 1985-07-29 | Hitachi Ltd | マトリツクス型半導体装置 |
JPS60195976A (ja) * | 1984-03-16 | 1985-10-04 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜電界効果トランジスタ |
JPS6139958U (ja) * | 1984-08-13 | 1986-03-13 | ソニー株式会社 | 電界効果トランジスタ |
JPH0750786B2 (ja) * | 1984-12-19 | 1995-05-31 | セイコーエプソン株式会社 | 薄膜トランジスタ |
US4597060A (en) | 1985-05-01 | 1986-06-24 | Texas Instruments Incorporated | EPROM array and method for fabricating |
JPH0810668B2 (ja) | 1985-10-31 | 1996-01-31 | 旭硝子株式会社 | 多結晶シリコン膜の製造方法 |
JPS62268161A (ja) * | 1986-05-16 | 1987-11-20 | Hitachi Ltd | 薄膜トランジスタ素子 |
JPS63293881A (ja) * | 1987-05-26 | 1988-11-30 | Ricoh Co Ltd | 縦型mos型薄膜トランジスタ |
JP2582794B2 (ja) * | 1987-08-10 | 1997-02-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH01162376A (ja) | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0215675A (ja) * | 1988-07-01 | 1990-01-19 | Fujitsu Ltd | 電界効果トランジスタ及びその製造方法 |
JPH0214578A (ja) * | 1988-07-01 | 1990-01-18 | Fujitsu Ltd | 半導体装置 |
FR2634318B1 (fr) | 1988-07-13 | 1992-02-21 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire integree |
US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
JPH02143417A (ja) | 1988-11-24 | 1990-06-01 | Sharp Corp | 半導体装置の製造方法 |
JPH03288475A (ja) | 1990-04-04 | 1991-12-18 | Seiko Instr Inc | 半導体装置の製造方法 |
JP3150334B2 (ja) | 1990-11-15 | 2001-03-26 | セイコーエプソン株式会社 | 液晶パネル |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2851968B2 (ja) * | 1991-04-26 | 1999-01-27 | キヤノン株式会社 | 改良された絶縁ゲート型トランジスタを有する半導体装置及びその製造方法 |
KR100269350B1 (ko) | 1991-11-26 | 2000-10-16 | 구본준 | 박막트랜지스터의제조방법 |
JPH05198759A (ja) * | 1992-01-23 | 1993-08-06 | Canon Inc | 絶縁ゲート型電界効果トランジスタ、それを用いた半導体装置及び製造方法 |
JPH05218416A (ja) * | 1992-01-31 | 1993-08-27 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JPH05218415A (ja) * | 1992-01-31 | 1993-08-27 | Kawasaki Steel Corp | 半導体装置 |
TW222345B (en) * | 1992-02-25 | 1994-04-11 | Semicondustor Energy Res Co Ltd | Semiconductor and its manufacturing method |
JP2572003B2 (ja) | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
JPH06275640A (ja) * | 1993-03-22 | 1994-09-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
US5292683A (en) | 1993-06-09 | 1994-03-08 | Micron Semiconductor, Inc. | Method of isolating semiconductor devices and arrays of memory integrated circuitry |
JP3450376B2 (ja) | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5985704A (en) * | 1993-07-27 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
TW272319B (ja) | 1993-12-20 | 1996-03-11 | Sharp Kk | |
JP3398453B2 (ja) * | 1994-02-24 | 2003-04-21 | 株式会社東芝 | 薄膜トランジスタの製造方法 |
US6700133B1 (en) | 1994-03-11 | 2004-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
JP3150840B2 (ja) | 1994-03-11 | 2001-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6906383B1 (en) | 1994-07-14 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacture thereof |
JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3378414B2 (ja) * | 1994-09-14 | 2003-02-17 | 株式会社東芝 | 半導体装置 |
US5712191A (en) | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
JPH0897431A (ja) | 1994-09-28 | 1996-04-12 | Fuji Xerox Co Ltd | 半導体装置およびその製造方法 |
US5942768A (en) | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
US5854803A (en) | 1995-01-12 | 1998-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser illumination system |
JP3727034B2 (ja) | 1995-01-13 | 2005-12-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
JP3216861B2 (ja) | 1995-04-10 | 2001-10-09 | シャープ株式会社 | 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法 |
TW297138B (ja) * | 1995-05-31 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
US5770263A (en) * | 1995-11-08 | 1998-06-23 | Micron Technology, Inc. | Method for in situ removal of particulate residues resulting from hydrofluoric acid cleaning treatments |
JP3841910B2 (ja) * | 1996-02-15 | 2006-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6599790B1 (en) * | 1996-02-15 | 2003-07-29 | Semiconductor Energy Laboratory Co., Ltd | Laser-irradiation method and laser-irradiation device |
JP3522441B2 (ja) | 1996-03-12 | 2004-04-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4103968B2 (ja) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
JP3645377B2 (ja) | 1996-10-24 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 集積回路の作製方法 |
TW451284B (en) | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP3597331B2 (ja) | 1996-10-24 | 2004-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4086925B2 (ja) * | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
US5933735A (en) | 1997-01-16 | 1999-08-03 | United Microelectronics Corp. | Semiconductor read-only memory device and method of fabricating the same |
US20010043173A1 (en) * | 1997-09-04 | 2001-11-22 | Ronald Roy Troutman | Field sequential gray in active matrix led display using complementary transistor pixel circuits |
JPH11121753A (ja) | 1997-10-14 | 1999-04-30 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3129264B2 (ja) | 1997-12-04 | 2001-01-29 | 日本電気株式会社 | 化合物半導体電界効果トランジスタ |
JPH11177102A (ja) | 1997-12-08 | 1999-07-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US6528397B1 (en) | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
JP2000068520A (ja) | 1997-12-17 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法 |
JP4931267B2 (ja) | 1998-01-29 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP3629939B2 (ja) * | 1998-03-18 | 2005-03-16 | セイコーエプソン株式会社 | トランジスタ回路、表示パネル及び電子機器 |
KR100271813B1 (ko) * | 1998-09-28 | 2000-11-15 | 구본준 | 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터및 그 제조방법 |
JP2000150896A (ja) * | 1998-11-16 | 2000-05-30 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
JP2000183351A (ja) | 1998-12-11 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
JP3649927B2 (ja) * | 1999-01-29 | 2005-05-18 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
JP4877675B2 (ja) * | 1999-06-28 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 電気光学装置の作製方法 |
JP4053691B2 (ja) | 1999-06-29 | 2008-02-27 | 三井化学株式会社 | ホスフィンオキシド化合物およびその製造方法 |
US6617226B1 (en) | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP3897965B2 (ja) | 1999-08-13 | 2007-03-28 | 株式会社半導体エネルギー研究所 | レーザー装置及びレーザーアニール方法 |
TW544743B (en) | 1999-08-13 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP4646368B2 (ja) * | 1999-08-31 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP2001091941A (ja) | 1999-09-20 | 2001-04-06 | Seiko Epson Corp | 液晶表示装置およびこれを用いた電子機器 |
JP4906017B2 (ja) * | 1999-09-24 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2001111053A (ja) * | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び表示装置 |
US6410368B1 (en) | 1999-10-26 | 2002-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with TFT |
JP2001147446A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 液晶表示装置とその製造方法 |
GB9927287D0 (en) * | 1999-11-19 | 2000-01-12 | Koninkl Philips Electronics Nv | Top gate thin film transistor and method of producing the same |
JP4145495B2 (ja) * | 2000-01-11 | 2008-09-03 | 株式会社半導体エネルギー研究所 | 表示装置、コンピュータ、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、ナビゲーションシステム、音響再生装置、ゲーム機器、携帯情報端末、及び画像再生装置 |
JP4836333B2 (ja) | 2000-01-28 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6780687B2 (en) | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
JP2001274433A (ja) | 2000-03-24 | 2001-10-05 | Japan Steel Works Ltd:The | シリコン膜の結晶化方法及び多結晶シリコン膜の製造方法並びに多結晶シリコン膜を用いたディバイス |
JP5127099B2 (ja) * | 2000-04-26 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 電子装置、表示装置 |
US6747289B2 (en) | 2000-04-27 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
JP5057613B2 (ja) | 2000-04-27 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
US7662677B2 (en) * | 2000-04-28 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US6746901B2 (en) | 2000-05-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
JP4683761B2 (ja) | 2000-05-12 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001324723A (ja) | 2000-05-12 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその製造方法。 |
JP2001332741A (ja) | 2000-05-25 | 2001-11-30 | Sony Corp | 薄膜トランジスタの製造方法 |
JP2001338987A (ja) * | 2000-05-26 | 2001-12-07 | Nec Microsystems Ltd | Mosトランジスタのシャロートレンチ分離領域の形成方法 |
US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4058751B2 (ja) | 2000-06-20 | 2008-03-12 | 日本電気株式会社 | 電界効果型トランジスタの製造方法 |
JP4044276B2 (ja) | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6413802B1 (en) | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
KR100338783B1 (en) * | 2000-10-28 | 2002-06-01 | Samsung Electronics Co Ltd | Semiconductor device having expanded effective width of active region and fabricating method thereof |
JP2002208705A (ja) | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
TWI221645B (en) | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP2002324808A (ja) | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US7115453B2 (en) | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP4071005B2 (ja) | 2001-01-29 | 2008-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6602758B2 (en) * | 2001-06-15 | 2003-08-05 | Agere Systems, Inc. | Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing |
JP4141138B2 (ja) | 2001-12-21 | 2008-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6933527B2 (en) | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
EP1326273B1 (en) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
TWI272666B (en) | 2002-01-28 | 2007-02-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US6930326B2 (en) | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
US6780694B2 (en) * | 2003-01-08 | 2004-08-24 | International Business Machines Corporation | MOS transistor |
-
2003
- 2003-01-28 US US10/352,233 patent/US7749818B2/en not_active Expired - Fee Related
-
2009
- 2009-05-12 JP JP2009115506A patent/JP5530656B2/ja not_active Expired - Lifetime
-
2012
- 2012-07-12 JP JP2012156153A patent/JP5586665B2/ja not_active Expired - Fee Related
-
2014
- 2014-01-15 JP JP2014004910A patent/JP5913390B2/ja not_active Expired - Fee Related
-
2015
- 2015-05-20 JP JP2015102714A patent/JP5997802B2/ja not_active Expired - Fee Related
-
2016
- 2016-07-28 JP JP2016148785A patent/JP2016213496A/ja not_active Withdrawn
-
2017
- 2017-12-15 JP JP2017240156A patent/JP6526778B2/ja not_active Expired - Lifetime
-
2018
- 2018-05-18 JP JP2018095960A patent/JP2018148224A/ja not_active Withdrawn
-
2019
- 2019-05-13 JP JP2019090636A patent/JP6709873B2/ja not_active Expired - Lifetime
- 2019-07-05 JP JP2019126127A patent/JP2019197908A/ja not_active Withdrawn
-
2021
- 2021-01-27 JP JP2021010963A patent/JP7062799B2/ja not_active Expired - Lifetime
- 2021-02-01 JP JP2021014492A patent/JP2021101464A/ja not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132303A (ja) * | 1991-11-29 | 1994-05-13 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
JPH06244208A (ja) * | 1993-02-19 | 1994-09-02 | Nippondenso Co Ltd | 半導体装置の製造方法 |
US20020003256A1 (en) * | 2000-02-14 | 2002-01-10 | Mitsubishi Denki Kabushiki Kaisha | MOS semiconductor device and method of manufacturing the same |
JP2001330860A (ja) * | 2000-02-28 | 2001-11-30 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2001298194A (ja) * | 2000-04-14 | 2001-10-26 | Nec Corp | 電界効果型トランジスタ及びその製造方法 |
JP2001305584A (ja) * | 2000-04-25 | 2001-10-31 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013504882A (ja) * | 2009-09-16 | 2013-02-07 | メルク パテント ゲーエムベーハー | 有機エレクトロルミネセンス素子 |
Also Published As
Publication number | Publication date |
---|---|
JP6709873B2 (ja) | 2020-06-17 |
JP2014112698A (ja) | 2014-06-19 |
JP2019174819A (ja) | 2019-10-10 |
JP6526778B2 (ja) | 2019-06-05 |
JP2021090060A (ja) | 2021-06-10 |
JP5913390B2 (ja) | 2016-04-27 |
JP2018148224A (ja) | 2018-09-20 |
JP7062799B2 (ja) | 2022-05-06 |
JP5997802B2 (ja) | 2016-09-28 |
JP2019197908A (ja) | 2019-11-14 |
JP2016213496A (ja) | 2016-12-15 |
JP2012256896A (ja) | 2012-12-27 |
JP2021101464A (ja) | 2021-07-08 |
JP5586665B2 (ja) | 2014-09-10 |
US7749818B2 (en) | 2010-07-06 |
US20030218171A1 (en) | 2003-11-27 |
JP5530656B2 (ja) | 2014-06-25 |
JP2015179865A (ja) | 2015-10-08 |
JP2018064112A (ja) | 2018-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7062799B2 (ja) | 表示パネル | |
JP6726731B2 (ja) | 薄膜トランジスタの作製方法 | |
US7105392B2 (en) | Semiconductor device and method of manufacturing the same | |
JP4137460B2 (ja) | 半導体装置の作製方法 | |
JP4397599B2 (ja) | 半導体装置の作製方法 | |
JP4312466B2 (ja) | 半導体装置の作製方法 | |
JP4137461B2 (ja) | 半導体装置の作製方法 | |
JP4627135B2 (ja) | 半導体装置の生産方法 | |
JP2005340852A (ja) | 半導体装置及び電子機器 | |
JP2004006644A (ja) | 半導体装置及びその作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090610 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130305 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130710 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130902 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20131101 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140421 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5530656 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |