JP2006270107A - ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法 - Google Patents

ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法 Download PDF

Info

Publication number
JP2006270107A
JP2006270107A JP2006083846A JP2006083846A JP2006270107A JP 2006270107 A JP2006270107 A JP 2006270107A JP 2006083846 A JP2006083846 A JP 2006083846A JP 2006083846 A JP2006083846 A JP 2006083846A JP 2006270107 A JP2006270107 A JP 2006270107A
Authority
JP
Japan
Prior art keywords
fet
manufacturing
layer
channel
fet according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2006083846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006270107A5 (enExample
Inventor
Seiei Ri
成泳 李
Dong-Suk Shin
東石 申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006270107A publication Critical patent/JP2006270107A/ja
Publication of JP2006270107A5 publication Critical patent/JP2006270107A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
    • H10D30/6213—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections having rounded corners
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2006083846A 2005-03-24 2006-03-24 ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法 Ceased JP2006270107A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050024543A KR100594327B1 (ko) 2005-03-24 2005-03-24 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
US11/303,408 US7642578B2 (en) 2005-03-24 2005-12-16 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same

Publications (2)

Publication Number Publication Date
JP2006270107A true JP2006270107A (ja) 2006-10-05
JP2006270107A5 JP2006270107A5 (enExample) 2009-04-16

Family

ID=37035753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006083846A Ceased JP2006270107A (ja) 2005-03-24 2006-03-24 ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法

Country Status (6)

Country Link
US (2) US7642578B2 (enExample)
JP (1) JP2006270107A (enExample)
KR (1) KR100594327B1 (enExample)
CN (1) CN1855390B (enExample)
DE (1) DE102006012416B4 (enExample)
TW (1) TWI305385B (enExample)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008536323A (ja) * 2005-04-13 2008-09-04 コミツサリア タ レネルジー アトミーク １つ以上トランジスタチャネルを形成することができる１本以上の量子ワイヤが設けられたマイクロ電子デバイスを製造するための構造体および方法
JP2008277814A (ja) * 2007-05-03 2008-11-13 Samsung Electronics Co Ltd ゲルマニウム・ナノロッドを具備した電界効果トランジスタ及びその製造方法
JP2008283191A (ja) * 2007-05-10 2008-11-20 Samsung Electronics Co Ltd シリコンナノワイヤーを利用した発光ダイオード及びその製造方法
JP2010272859A (ja) * 2009-05-21 2010-12-02 Internatl Business Mach Corp <Ibm> 電界効果トランジスタ（ｆｅｔ）インバータとその製造方法（単一ゲート・インバータのナノワイヤ・メッシュ）
US7846786B2 (en) 2006-12-05 2010-12-07 Korea University Industrial & Academic Collaboration Foundation Method of fabricating nano-wire array
JP2011003797A (ja) * 2009-06-19 2011-01-06 Toshiba Corp 半導体装置及びその製造方法
JP2011066151A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置およびその製造方法
JP2011066152A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置およびその製造方法
JP2011519730A (ja) * 2008-03-25 2011-07-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 超格子／量子井戸ナノワイヤ
JP2012518269A (ja) * 2009-02-17 2012-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション ナノワイヤ・メッシュ・デバイス及びその製造方法
JP2012248698A (ja) * 2011-05-27 2012-12-13 Toshiba Corp 半導体装置およびその製造方法
KR101227144B1 (ko) 2006-12-13 2013-01-28 엘지디스플레이 주식회사 박막 트랜지스터 및 이의 제조 방법
JP2014505995A (ja) * 2010-12-01 2014-03-06 インテル コーポレイション シリコン及びシリコンゲルマニウムのナノワイヤ構造
US8901538B2 (en) 2012-07-18 2014-12-02 Samsung Electronics Co., Ltd. Nano resonator and manufacturing method thereof
JP2014535161A (ja) * 2011-10-04 2014-12-25 ウニバシダド デ グラナダ １つのトランジスタを有するｒａｍメモリセル
JP2017520123A (ja) * 2014-06-24 2017-07-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｉｉ−ｖチャネルを形成する方法
JP2017532762A (ja) * 2014-09-19 2017-11-02 インテル・コーポレーション マイクロ電子トランジスタ内の漏洩を低減するバッファを作成するための装置及び方法
JP2019029639A (ja) * 2017-08-02 2019-02-21 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． ダイナミックランダムアクセスメモリ及びその製造方法
US10290709B2 (en) 2014-09-19 2019-05-14 Intel Corporation Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces
JP2023533725A (ja) * 2020-07-06 2023-08-04 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドトランジスタのための選択的シリコンエッチング
JP2023536856A (ja) * 2020-08-02 2023-08-30 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドナノシート入出力デバイスのためのコンフォーマル酸化

Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618831B1 (ko) * 2004-06-08 2006-09-08 삼성전자주식회사 게이트 올 어라운드형 반도체소자 및 그 제조방법
DE102005026228B4 (de) * 2004-06-08 2010-04-15 Samsung Electronics Co., Ltd., Suwon Transistor vom GAA-Typ und Verfahren zu dessen Herstellung
KR100594327B1 (ko) * 2005-03-24 2006-06-30 삼성전자주식회사 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
US7341916B2 (en) * 2005-11-10 2008-03-11 Atmel Corporation Self-aligned nanometer-level transistor defined without lithography
KR100707208B1 (ko) * 2005-12-24 2007-04-13 삼성전자주식회사 Ｇａａ 구조의 핀-펫 및 그 제조 방법
FR2895835B1 (fr) * 2005-12-30 2008-05-09 Commissariat Energie Atomique Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain
KR100712543B1 (ko) * 2005-12-31 2007-04-30 삼성전자주식회사 다중채널을 갖는 반도체소자 및 그 제조방법
KR100801063B1 (ko) * 2006-10-02 2008-02-04 삼성전자주식회사 게이트 올 어라운드형 반도체 장치 및 그 제조 방법
US20080135949A1 (en) * 2006-12-08 2008-06-12 Agency For Science, Technology And Research Stacked silicon-germanium nanowire structure and method of forming the same
CN100536113C (zh) * 2007-04-27 2009-09-02 北京大学 一种体硅纳米线晶体管器件的制备方法
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
KR101406224B1 (ko) * 2007-10-26 2014-06-12 삼성전자주식회사 나노 와이어 트랜지스터 및 그 제조 방법
FR2923652B1 (fr) 2007-11-09 2010-06-11 Commissariat Energie Atomique Procede de fabrication de nanofils paralleles a leur substrat support
WO2009098548A1 (en) * 2008-02-08 2009-08-13 Freescale Semiconductor, Inc. Intermediate product for a multichannel fet and process for obtaining an intermediate product
CN101960570A (zh) * 2008-02-26 2011-01-26 Nxp股份有限公司 制造半导体器件的方法和半导体器件
US20110057163A1 (en) * 2008-06-09 2011-03-10 National Institute Of Advanced Industrial Science And Technology Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
KR101471858B1 (ko) 2008-09-05 2014-12-12 삼성전자주식회사 바 타입의 액티브 패턴을 구비하는 반도체 장치 및 그 제조방법
KR101539669B1 (ko) 2008-12-16 2015-07-27 삼성전자주식회사 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법
US7981772B2 (en) * 2008-12-29 2011-07-19 International Business Machines Corporation Methods of fabricating nanostructures
JP4724231B2 (ja) * 2009-01-29 2011-07-13 株式会社東芝 半導体装置およびその製造方法
CN101958328B (zh) * 2009-07-16 2012-05-23 中芯国际集成电路制造(上海)有限公司 Cmos器件及其制造方法
CN102034863B (zh) * 2009-09-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 半导体器件、含包围圆柱形沟道的栅的晶体管及制造方法
US9373694B2 (en) 2009-09-28 2016-06-21 Semiconductor Manufacturing International (Shanghai) Corporation System and method for integrated circuits with cylindrical gate structures
CN101719499B (zh) * 2009-12-01 2012-09-26 中国科学院上海微系统与信息技术研究所 混合材料积累型圆柱体全包围栅cmos场效应晶体管
US8455334B2 (en) 2009-12-04 2013-06-04 International Business Machines Corporation Planar and nanowire field effect transistors
US8173993B2 (en) * 2009-12-04 2012-05-08 International Business Machines Corporation Gate-all-around nanowire tunnel field effect transistors
US8143113B2 (en) 2009-12-04 2012-03-27 International Business Machines Corporation Omega shaped nanowire tunnel field effect transistors fabrication
US8129247B2 (en) 2009-12-04 2012-03-06 International Business Machines Corporation Omega shaped nanowire field effect transistors
US8384065B2 (en) * 2009-12-04 2013-02-26 International Business Machines Corporation Gate-all-around nanowire field effect transistors
US8207453B2 (en) * 2009-12-17 2012-06-26 Intel Corporation Glass core substrate for integrated circuit devices and methods of making the same
US9420707B2 (en) 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
US8344425B2 (en) * 2009-12-30 2013-01-01 Intel Corporation Multi-gate III-V quantum well structures
US8722492B2 (en) 2010-01-08 2014-05-13 International Business Machines Corporation Nanowire pin tunnel field effect devices
US8324940B2 (en) 2010-04-13 2012-12-04 International Business Machines Corporation Nanowire circuits in matched devices
US8377784B2 (en) * 2010-04-22 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a semiconductor device
US8361907B2 (en) 2010-05-10 2013-01-29 International Business Machines Corporation Directionally etched nanowire field effect transistors
US8324030B2 (en) 2010-05-12 2012-12-04 International Business Machines Corporation Nanowire tunnel field effect transistors
US8835231B2 (en) 2010-08-16 2014-09-16 International Business Machines Corporation Methods of forming contacts for nanowire field effect transistors
US8536563B2 (en) 2010-09-17 2013-09-17 International Business Machines Corporation Nanowire field effect transistors
CN102446952B (zh) * 2010-09-30 2014-01-29 中国科学院微电子研究所 一种半导体结构及其形成方法
CN102129981B (zh) * 2010-12-30 2013-06-05 北京大学深圳研究生院 一种纳米线及纳米线晶体管的制作方法
CN102157556B (zh) * 2011-01-27 2012-12-19 北京大学 基于氧化分凝的埋沟结构硅基围栅晶体管及其制备方法
CN102157557B (zh) * 2011-01-27 2012-07-25 北京大学 一种基于纳米线器件的耐高压横向双向扩散晶体管
JP5271372B2 (ja) 2011-03-18 2013-08-21 株式会社東芝 半導体装置の製造方法
KR101813173B1 (ko) * 2011-03-30 2017-12-29 삼성전자주식회사 반도체소자와 그 제조방법 및 반도체소자를 포함하는 전자장치
CN102315170B (zh) * 2011-05-26 2013-07-31 北京大学 一种基于湿法腐蚀制备硅纳米线场效应晶体管的方法
CN102969222B (zh) * 2011-09-01 2015-03-18 上海华力微电子有限公司 与cmos工艺兼容的硅纳米线器件的制作方法
CN102509694B (zh) * 2011-10-25 2015-04-01 上海华力微电子有限公司 保留部分无定形碳层的方法
CN102544073A (zh) * 2011-12-16 2012-07-04 北京大学深圳研究生院 无结纳米线场效应晶体管
WO2013095341A1 (en) 2011-12-19 2013-06-27 Intel Corporation Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture
DE112011105945B4 (de) 2011-12-19 2021-10-28 Google Llc Gruppe III-N Nanodraht-Transistoren und Verfahren zu ihrer Herstellung
KR101857582B1 (ko) * 2011-12-20 2018-05-14 인텔 코포레이션 반도체 구조물 및 제조 방법
DE112011106023B4 (de) 2011-12-23 2025-04-03 Google Llc Nanodrahtstrukturen mit nicht diskreten Source- und Drain-Gebieten und zugehöriges Herstellungsverfahren
CN104137228A (zh) * 2011-12-23 2014-11-05 英特尔公司 具有环绕式接触部的纳米线结构
US9012284B2 (en) 2011-12-23 2015-04-21 Intel Corporation Nanowire transistor devices and forming techniques
CN112563315A (zh) * 2011-12-23 2021-03-26 索尼公司 半导体器件和集成电路结构
CN103258741B (zh) * 2012-02-20 2016-02-17 中芯国际集成电路制造(上海)有限公司 纳米线场效应晶体管及其形成方法
US9445496B2 (en) 2012-03-07 2016-09-13 Intel Corporation Glass clad microelectronic substrate
CN102623322B (zh) * 2012-03-31 2014-07-16 上海华力微电子有限公司 基于体硅的纵向堆叠式SiNWFET制备方法
CN102623338B (zh) * 2012-03-31 2014-11-26 上海华力微电子有限公司 基于soi的纵向堆叠式硅纳米线场效应晶体管制备方法
CN102623383A (zh) * 2012-03-31 2012-08-01 上海华力微电子有限公司 基于体硅的纵向堆叠式后栅型SiNWFET制备方法
CN102623347B (zh) * 2012-03-31 2014-10-22 上海华力微电子有限公司 基于体硅的三维阵列式SiNWFET制备方法
CN102646624B (zh) * 2012-03-31 2014-04-16 上海华力微电子有限公司 基于SOI的三维阵列式后栅型Si-NWFET制造方法
CN102623321B (zh) * 2012-03-31 2015-01-28 上海华力微电子有限公司 基于体硅的纵向堆叠式后栅型SiNWFET制备方法
FR2989515B1 (fr) * 2012-04-16 2015-01-16 Commissariat Energie Atomique Procede ameliore de realisation d'une structure de transistor a nano-fils superposes et a grille enrobante
US20130285019A1 (en) * 2012-04-26 2013-10-31 Postech Academy-Industry Foundation Field effect transistor and method of fabricating the same
CN102646643B (zh) * 2012-05-03 2014-03-12 上海华力微电子有限公司 基于SOI的积累型Si-NWFET制备方法
CN102709245B (zh) * 2012-05-04 2014-06-04 上海华力微电子有限公司 制备双层SOI混合晶向后栅型反型模式SiNWFET的方法
US9484447B2 (en) * 2012-06-29 2016-11-01 Intel Corporation Integration methods to fabricate internal spacers for nanowire devices
US9001520B2 (en) 2012-09-24 2015-04-07 Intel Corporation Microelectronic structures having laminated or embedded glass routing structures for high density packaging
US9041106B2 (en) 2012-09-27 2015-05-26 Intel Corporation Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates
US8785909B2 (en) * 2012-09-27 2014-07-22 Intel Corporation Non-planar semiconductor device having channel region with low band-gap cladding layer
US8823059B2 (en) 2012-09-27 2014-09-02 Intel Corporation Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
US8735869B2 (en) * 2012-09-27 2014-05-27 Intel Corporation Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
CN103854971B (zh) * 2012-12-04 2016-10-05 中芯国际集成电路制造(上海)有限公司 纳米线的制造方法、纳米线场效应晶体管的制造方法
US8927405B2 (en) * 2012-12-18 2015-01-06 International Business Machines Corporation Accurate control of distance between suspended semiconductor nanowires and substrate surface
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
US9831345B2 (en) * 2013-03-11 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with rounded source/drain profile
JP6312789B2 (ja) * 2013-03-14 2018-04-18 インテル・コーポレーション ナノワイヤトランジスタのリーク低減構造
CN104143513B (zh) * 2013-05-09 2016-12-28 中芯国际集成电路制造(上海)有限公司 纳米真空场效应电子管及其形成方法
US11404325B2 (en) 2013-08-20 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon and silicon germanium nanowire formation
US9184269B2 (en) * 2013-08-20 2015-11-10 Taiwan Semiconductor Manufacturing Company Limited Silicon and silicon germanium nanowire formation
US9252016B2 (en) 2013-09-04 2016-02-02 Globalfoundries Inc. Stacked nanowire
US9362397B2 (en) 2013-09-24 2016-06-07 Samsung Electronics Co., Ltd. Semiconductor devices
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
KR102083494B1 (ko) 2013-10-02 2020-03-02 삼성전자 주식회사 나노와이어 트랜지스터를 포함하는 반도체 소자
US9299784B2 (en) * 2013-10-06 2016-03-29 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with non-linear surface
US9048301B2 (en) * 2013-10-16 2015-06-02 Taiwan Semiconductor Manufacturing Company Limited Nanowire MOSFET with support structures for source and drain
US9136332B2 (en) 2013-12-10 2015-09-15 Taiwan Semiconductor Manufacturing Company Limited Method for forming a nanowire field effect transistor device having a replacement gate
US10553718B2 (en) * 2014-03-14 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with core-shell structures
WO2015147784A1 (en) * 2014-03-24 2015-10-01 Intel Corporation Fin sculpting and cladding during replacement gate process for transistor channel applications
US9893167B2 (en) * 2014-03-24 2018-02-13 Intel Corporation Integration methods to fabricate internal spacers for nanowire devices
US9528194B2 (en) * 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation
US9953989B2 (en) 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
CN104979388B (zh) * 2014-04-01 2018-04-13 中芯国际集成电路制造(上海)有限公司 一种半导体装置及其制造方法
KR102083632B1 (ko) 2014-04-25 2020-03-03 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102223971B1 (ko) * 2014-06-11 2021-03-10 삼성전자주식회사 결정성의 다중-나노시트 스트레인 채널 전계 효과 트랜지스터 및 그 제조 방법
US9502518B2 (en) * 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
US9966471B2 (en) * 2014-06-27 2018-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked Gate-All-Around FinFET and method forming the same
US9647098B2 (en) * 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same
US10396152B2 (en) 2014-07-25 2019-08-27 International Business Machines Corporation Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction
US9853166B2 (en) 2014-07-25 2017-12-26 International Business Machines Corporation Perfectly symmetric gate-all-around FET on suspended nanowire
US9306019B2 (en) * 2014-08-12 2016-04-05 GlobalFoundries, Inc. Integrated circuits with nanowires and methods of manufacturing the same
CN105374679B (zh) * 2014-08-26 2019-03-26 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US9871101B2 (en) 2014-09-16 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN104282575B (zh) * 2014-09-26 2017-06-06 北京大学 一种制备纳米尺度场效应晶体管的方法
US9312186B1 (en) * 2014-11-04 2016-04-12 Taiwan Semiconductor Manufacturing Company Limited Method of forming horizontal gate all around structure
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
US9449820B2 (en) 2014-12-22 2016-09-20 International Business Machines Corporation Epitaxial growth techniques for reducing nanowire dimension and pitch
CN105810734B (zh) * 2014-12-29 2018-09-11 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
TWI598994B (zh) * 2015-01-13 2017-09-11 東京威力科創股份有限公司 奈米線結構之形成方法
CN105870183B (zh) * 2015-01-19 2019-07-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9397179B1 (en) 2015-02-17 2016-07-19 Samsung Electronics Co., Ltd. Semiconductor device
US9502673B2 (en) * 2015-03-31 2016-11-22 International Business Machines Corporation Transistor devices with tapered suspended vertical arrays of carbon nanotubes
US20160372600A1 (en) * 2015-06-19 2016-12-22 International Business Machines Corporation Contact-first field-effect transistors
EP3314641A4 (en) * 2015-06-26 2019-01-23 Intel Corporation PSEUDOMORPHES INGAAS ON GAAS FOR GATE ALL-AROUND TRANSISTORS
US9425259B1 (en) 2015-07-17 2016-08-23 Samsung Electronics Co., Ltd. Semiconductor device having a fin
US9614068B2 (en) * 2015-09-02 2017-04-04 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2017044107A1 (en) 2015-09-10 2017-03-16 Intel Corporation Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
KR102373620B1 (ko) * 2015-09-30 2022-03-11 삼성전자주식회사 반도체 장치
WO2017079470A1 (en) * 2015-11-03 2017-05-11 Tokyo Electron Limited Method of corner rounding and trimming of nanowires by microwave plasma
US9899387B2 (en) * 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
US10204985B2 (en) * 2015-11-16 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US10217817B2 (en) 2016-01-27 2019-02-26 International Business Machines Corporation Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs
US9614040B1 (en) 2016-02-02 2017-04-04 International Business Machines Corporation Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance
KR101802055B1 (ko) 2016-02-16 2017-11-27 한국과학기술원 수직 집적 전면-게이트 다층 나노선 채널 기반의 무접합 트랜지스터 및 그 제작 방법
CN107132942A (zh) * 2016-02-26 2017-09-05 鸿富锦精密工业（深圳）有限公司 触控显示装置
US9755017B1 (en) * 2016-03-01 2017-09-05 International Business Machines Corporation Co-integration of silicon and silicon-germanium channels for nanosheet devices
KR102413610B1 (ko) 2016-03-02 2022-06-24 삼성전자주식회사 레이아웃 디자인 시스템, 이를 이용한 반도체 장치 및 그 제조 방법
KR102340313B1 (ko) 2016-03-02 2021-12-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20170124284A (ko) * 2016-05-02 2017-11-10 삼성전자주식회사 반도체 장치
KR20170135115A (ko) * 2016-05-30 2017-12-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11004985B2 (en) 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
KR102429611B1 (ko) * 2016-06-10 2022-08-04 삼성전자주식회사 반도체 장치 제조 방법
US9905643B1 (en) * 2016-08-26 2018-02-27 International Business Machines Corporation Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors
US9620590B1 (en) * 2016-09-20 2017-04-11 International Business Machines Corporation Nanosheet channel-to-source and drain isolation
US10177226B2 (en) * 2016-11-03 2019-01-08 International Business Machines Corporation Preventing threshold voltage variability in stacked nanosheets
US10199485B2 (en) * 2017-01-18 2019-02-05 United Microelectronics Corp. Semiconductor device including quantum wires
US10068794B2 (en) * 2017-01-31 2018-09-04 Advanced Micro Devices, Inc. Gate all around device architecture with hybrid wafer bond technique
US10106737B2 (en) 2017-03-22 2018-10-23 Lam Research Ag Liquid mixture and method for selectively wet etching silicon germanium
KR102318560B1 (ko) 2017-04-12 2021-11-01 삼성전자주식회사 반도체 소자
US10304728B2 (en) 2017-05-01 2019-05-28 Advanced Micro Devices, Inc. Double spacer immersion lithography triple patterning flow and method
US10186510B2 (en) 2017-05-01 2019-01-22 Advanced Micro Devices, Inc. Vertical gate all around library architecture
US20190081155A1 (en) * 2017-09-13 2019-03-14 Globalfoundries Inc. Nanosheet transistor with improved inner spacer
US10685887B2 (en) * 2017-12-04 2020-06-16 Tokyo Electron Limited Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) device
CN109904074B (zh) * 2017-12-11 2022-04-08 中芯国际集成电路制造(北京)有限公司 全包围栅场效应晶体管及其制造方法
KR20240132108A (ko) * 2017-12-12 2024-09-02 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치 및 그 제조 방법
CN108470771A (zh) * 2018-04-11 2018-08-31 北京邮电大学 一种纳米线晶体管
CN110571192A (zh) * 2018-06-05 2019-12-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11031239B2 (en) * 2018-06-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nanosheets and methods of forming the same
US11417775B2 (en) * 2018-07-24 2022-08-16 Intel Corporation Nanowire thin film transistors with textured semiconductors
US10861722B2 (en) * 2018-11-13 2020-12-08 Applied Materials, Inc. Integrated semiconductor processing
KR102803400B1 (ko) * 2019-06-11 2025-05-02 삼성전자주식회사 반도체 장치
TWI791871B (zh) * 2019-07-19 2023-02-11 力晶積成電子製造股份有限公司 通道全環繞半導體裝置及其製造方法
US11456368B2 (en) * 2019-08-22 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with hard mask layer over fin structure and method for forming the same
US11282967B2 (en) * 2019-12-30 2022-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructure field-effect transistor device and method of forming
US12308370B2 (en) 2021-09-29 2025-05-20 Advanced Micro Devices, Inc. Cross field effect transistors (XFETs) in integrated circuits
US11862640B2 (en) 2021-09-29 2024-01-02 Advanced Micro Devices, Inc. Cross field effect transistor (XFET) library architecture power routing
US20240055524A1 (en) * 2022-08-09 2024-02-15 Micron Technology, Inc. Finfets with reduced parasitics

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128508A (ja) * 2002-10-01 2004-04-22 Samsung Electronics Co Ltd 多重チャンネルを有するモストランジスター及びその製造方法
US20040166642A1 (en) * 2003-02-20 2004-08-26 Hao-Yu Chen Semiconductor nano-rod devices
JP2005268782A (ja) * 2004-03-15 2005-09-29 Internatl Business Mach Corp <Ibm> 局所的に薄くしたフィンを有するフィン型ｆｅｔ及びその形成方法
JP2006128233A (ja) * 2004-10-27 2006-05-18 Hitachi Ltd 半導体材料および電界効果トランジスタとそれらの製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613594B2 (ja) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
JPH118390A (ja) 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7041170B2 (en) * 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
US6635923B2 (en) * 2001-05-24 2003-10-21 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
JP3600591B2 (ja) * 2002-03-28 2004-12-15 沖電気工業株式会社 半導体装置の製造方法
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
KR100958055B1 (ko) * 2003-05-02 2010-05-13 삼성전자주식회사 게이트에 의해 둘러싸인 카본나노튜브 전계효과트랜지스터및 그 제조방법
US6919250B2 (en) * 2003-05-21 2005-07-19 Advanced Micro Devices, Inc. Multiple-gate MOS device and method for making the same
JP2005086024A (ja) * 2003-09-09 2005-03-31 Toshiba Corp 半導体装置及びその製造方法
SE527205C2 (sv) * 2004-04-14 2006-01-17 Denso Corp Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid
KR100532564B1 (ko) * 2004-05-25 2005-12-01 한국전자통신연구원 다중 게이트 모스 트랜지스터 및 그 제조 방법
KR100625177B1 (ko) * 2004-05-25 2006-09-20 삼성전자주식회사 멀티-브리지 채널형 모오스 트랜지스터의 제조 방법
KR100585157B1 (ko) * 2004-09-07 2006-05-30 삼성전자주식회사 다수의 와이어 브릿지 채널을 구비한 모스 트랜지스터 및그 제조방법
US7435665B2 (en) * 2004-10-06 2008-10-14 Okmetic Oyj CVD doped structures
KR100594327B1 (ko) 2005-03-24 2006-06-30 삼성전자주식회사 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
WO2006113859A2 (en) * 2005-04-20 2006-10-26 Yazaki Corporation Photomask assembly incorporating a metal/scavenger pellicle frame
KR100755367B1 (ko) * 2005-06-08 2007-09-04 삼성전자주식회사 실린더형 게이트를 갖는 나노-라인 반도체 소자 및 그제조방법
KR100707208B1 (ko) * 2005-12-24 2007-04-13 삼성전자주식회사 Ｇａａ 구조의 핀-펫 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128508A (ja) * 2002-10-01 2004-04-22 Samsung Electronics Co Ltd 多重チャンネルを有するモストランジスター及びその製造方法
US20040166642A1 (en) * 2003-02-20 2004-08-26 Hao-Yu Chen Semiconductor nano-rod devices
JP2005268782A (ja) * 2004-03-15 2005-09-29 Internatl Business Mach Corp <Ibm> 局所的に薄くしたフィンを有するフィン型ｆｅｔ及びその形成方法
JP2006128233A (ja) * 2004-10-27 2006-05-18 Hitachi Ltd 半導体材料および電界効果トランジスタとそれらの製造方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008536323A (ja) * 2005-04-13 2008-09-04 コミツサリア タ レネルジー アトミーク １つ以上トランジスタチャネルを形成することができる１本以上の量子ワイヤが設けられたマイクロ電子デバイスを製造するための構造体および方法
US7846786B2 (en) 2006-12-05 2010-12-07 Korea University Industrial & Academic Collaboration Foundation Method of fabricating nano-wire array
KR101227144B1 (ko) 2006-12-13 2013-01-28 엘지디스플레이 주식회사 박막 트랜지스터 및 이의 제조 방법
JP2008277814A (ja) * 2007-05-03 2008-11-13 Samsung Electronics Co Ltd ゲルマニウム・ナノロッドを具備した電界効果トランジスタ及びその製造方法
JP2008283191A (ja) * 2007-05-10 2008-11-20 Samsung Electronics Co Ltd シリコンナノワイヤーを利用した発光ダイオード及びその製造方法
US8558256B2 (en) 2007-05-10 2013-10-15 Samsung Electronics Co., Ltd. Light emitting diode using semiconductor nanowire and method of fabricating the same
US8878259B2 (en) 2008-03-25 2014-11-04 International Business Machines Corporation Super lattice/quantum well nanowires
JP2011519730A (ja) * 2008-03-25 2011-07-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 超格子／量子井戸ナノワイヤ
JP2012518269A (ja) * 2009-02-17 2012-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション ナノワイヤ・メッシュ・デバイス及びその製造方法
KR101369134B1 (ko) 2009-02-17 2014-03-04 인터내셔널 비지네스 머신즈 코포레이션 나노와이어 메시 디바이스와 그 제조 방법
JP2010272859A (ja) * 2009-05-21 2010-12-02 Internatl Business Mach Corp <Ibm> 電界効果トランジスタ（ｆｅｔ）インバータとその製造方法（単一ゲート・インバータのナノワイヤ・メッシュ）
JP2011003797A (ja) * 2009-06-19 2011-01-06 Toshiba Corp 半導体装置及びその製造方法
JP2011066152A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置およびその製造方法
US8314464B2 (en) 2009-09-16 2012-11-20 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
JP2011066151A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置およびその製造方法
JP2014505995A (ja) * 2010-12-01 2014-03-06 インテル コーポレイション シリコン及びシリコンゲルマニウムのナノワイヤ構造
JP2012248698A (ja) * 2011-05-27 2012-12-13 Toshiba Corp 半導体装置およびその製造方法
JP2014535161A (ja) * 2011-10-04 2014-12-25 ウニバシダド デ グラナダ １つのトランジスタを有するｒａｍメモリセル
US8901538B2 (en) 2012-07-18 2014-12-02 Samsung Electronics Co., Ltd. Nano resonator and manufacturing method thereof
JP2017520123A (ja) * 2014-06-24 2017-07-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｉｉ−ｖチャネルを形成する方法
US10559683B2 (en) 2014-09-19 2020-02-11 Intel Corporation Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors
JP2017532762A (ja) * 2014-09-19 2017-11-02 インテル・コーポレーション マイクロ電子トランジスタ内の漏洩を低減するバッファを作成するための装置及び方法
US10290709B2 (en) 2014-09-19 2019-05-14 Intel Corporation Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces
JP2019029639A (ja) * 2017-08-02 2019-02-21 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． ダイナミックランダムアクセスメモリ及びその製造方法
US10636796B2 (en) 2017-08-02 2020-04-28 Winbond Electronics Corp. Dynamic random access memory and method of fabricating the same
JP2023533725A (ja) * 2020-07-06 2023-08-04 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドトランジスタのための選択的シリコンエッチング
US12062708B2 (en) 2020-07-06 2024-08-13 Applied Materials, Inc. Selective silicon etch for gate all around transistors
JP7559202B2 (ja) 2020-07-06 2024-10-01 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドトランジスタのための選択的シリコンエッチング
JP2023536856A (ja) * 2020-08-02 2023-08-30 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドナノシート入出力デバイスのためのコンフォーマル酸化
JP7678082B2 (ja) 2020-08-02 2025-05-15 アプライド マテリアルズ インコーポレイテッド ゲートオールアラウンドナノシート入出力デバイスのためのコンフォーマル酸化

Also Published As

Publication number Publication date
US20100068862A1 (en) 2010-03-18
CN1855390B (zh) 2010-07-21
DE102006012416A1 (de) 2006-10-05
TW200711001A (en) 2007-03-16
US7642578B2 (en) 2010-01-05
US20060216897A1 (en) 2006-09-28
TWI305385B (en) 2009-01-11
CN1855390A (zh) 2006-11-01
US8110471B2 (en) 2012-02-07
DE102006012416B4 (de) 2010-04-15
KR100594327B1 (ko) 2006-06-30

Similar Documents

Publication Publication Date Title
JP2006270107A (ja) ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法
KR100772114B1 (ko) 반도체 소자의 제조방법
JP5230737B2 (ja) 異なる高さの隣接シリコンフィンを製造する方法
JP5128110B2 (ja) 方法、半導体構造（準自己整合ソース／ドレインフィンｆｅｔプロセス）
JP2011181931A (ja) フィン型ｆｅｔを有する半導体装置およびその製造方法
JP2001160589A (ja) トレンチ素子分離構造とこれを有する半導体素子及びトレンチ素子分離方法
TW201729348A (zh) 半導體元件及其製造方法
JP2003298051A (ja) ダブルゲートｆｅｔ素子及びその製造方法
TW201806156A (zh) 半導體結構及其製作方法
JP2000012676A (ja) 半導体装置のトレンチ素子分離方法
CN111106010B (zh) 具有堆叠半导体层作为沟道的晶体管
US7863137B2 (en) Methods of fabricating field effect transistors having protruded active regions
CN112530942A (zh) 半导体器件及其形成方法
US9882031B2 (en) Method of manufacturing a horizontal gate-all-around transistor having a fin
CN107564859A (zh) 半导体装置及其制造方法
US9418845B2 (en) Method for forming semiconductor device with SEG film active region
CN104078363A (zh) 半导体器件制造方法
CN100370594C (zh) 单元晶体管的制造方法
CN110729248B (zh) 一种堆叠纳米线或片cmos器件制备方法
CN109904234B (zh) 一种纳米线围栅器件制造方法
JP2005328033A (ja) 半導体装置及びその製造方法
CN110752155B (zh) 一种鳍状结构及半导体器件的制备方法
KR100629694B1 (ko) 반도체 소자 제조 방법
TW202510105A (zh) 半導體裝置及其形成方法
US7927965B2 (en) Method for fabricating partial SOI substrate

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090304

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090304

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120529

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120531

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20120925