FR2895835B1 - Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain - Google Patents

Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain

Info

Publication number
FR2895835B1
FR2895835B1 FR0554151A FR0554151A FR2895835B1 FR 2895835 B1 FR2895835 B1 FR 2895835B1 FR 0554151 A FR0554151 A FR 0554151A FR 0554151 A FR0554151 A FR 0554151A FR 2895835 B1 FR2895835 B1 FR 2895835B1
Authority
FR
France
Prior art keywords
grid
isolating
achieving
source
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0554151A
Other languages
English (en)
Other versions
FR2895835A1 (fr
Inventor
Thomas Ernst
Christian Isheden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0554151A priority Critical patent/FR2895835B1/fr
Priority to PCT/EP2006/070255 priority patent/WO2007077194A1/fr
Priority to EP06830845A priority patent/EP1966819A1/fr
Priority to US12/097,411 priority patent/US20080277691A1/en
Priority to JP2008547972A priority patent/JP2009522760A/ja
Publication of FR2895835A1 publication Critical patent/FR2895835A1/fr
Application granted granted Critical
Publication of FR2895835B1 publication Critical patent/FR2895835B1/fr
Priority to US13/190,125 priority patent/US8492232B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR0554151A 2005-12-30 2005-12-30 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain Expired - Fee Related FR2895835B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0554151A FR2895835B1 (fr) 2005-12-30 2005-12-30 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain
PCT/EP2006/070255 WO2007077194A1 (fr) 2005-12-30 2006-12-28 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain
EP06830845A EP1966819A1 (fr) 2005-12-30 2006-12-28 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain
US12/097,411 US20080277691A1 (en) 2005-12-30 2006-12-28 Production of a Transistor Gate on a Multibranch Channel Structure and Means for Isolating This Gate From the Source and Drain Regions
JP2008547972A JP2009522760A (ja) 2005-12-30 2006-12-28 マルチブランチチャネル構造におけるトランジスタゲートの形成およびソースおよびドレイン領域からのゲートの分離方法
US13/190,125 US8492232B2 (en) 2005-12-30 2011-07-25 Production of a transistor gate on a multibranch channel structure and means for isolating this gate from the source and drain regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0554151A FR2895835B1 (fr) 2005-12-30 2005-12-30 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain

Publications (2)

Publication Number Publication Date
FR2895835A1 FR2895835A1 (fr) 2007-07-06
FR2895835B1 true FR2895835B1 (fr) 2008-05-09

Family

ID=37011917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0554151A Expired - Fee Related FR2895835B1 (fr) 2005-12-30 2005-12-30 Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain

Country Status (5)

Country Link
US (2) US20080277691A1 (fr)
EP (1) EP1966819A1 (fr)
JP (1) JP2009522760A (fr)
FR (1) FR2895835B1 (fr)
WO (1) WO2007077194A1 (fr)

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FR2933802B1 (fr) * 2008-07-10 2010-10-15 Commissariat Energie Atomique Structure et procede de realisation d'un dispositif microelectronique de memoire 3d de type flash nand.
US9029834B2 (en) * 2010-07-06 2015-05-12 International Business Machines Corporation Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
US8753942B2 (en) 2010-12-01 2014-06-17 Intel Corporation Silicon and silicon germanium nanowire structures
JP5592281B2 (ja) * 2011-01-05 2014-09-17 猛英 白土 半導体装置及びその製造方法
EP2477211B1 (fr) * 2011-01-17 2019-03-06 IMEC vzw Procédé de dépôt sélectif d'un matériau semi-conducteur
US8987794B2 (en) 2011-12-23 2015-03-24 Intel Coporation Non-planar gate all-around device and method of fabrication thereof
FR2989515B1 (fr) 2012-04-16 2015-01-16 Commissariat Energie Atomique Procede ameliore de realisation d'une structure de transistor a nano-fils superposes et a grille enrobante
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
FR3005309B1 (fr) * 2013-05-02 2016-03-11 Commissariat Energie Atomique Transistors a nanofils et planaires cointegres sur substrat soi utbox
EP3123515B1 (fr) * 2014-03-24 2021-04-28 Intel Corporation Procédés d'intégration pour fabriquer des entretoises intérieures destinées à des dispositifs à nanofils et dispositif à nanofils avec des entretoises intérieures
US9093478B1 (en) * 2014-04-11 2015-07-28 International Business Machines Corporation Integrated circuit structure with bulk silicon FinFET and methods of forming
US9293523B2 (en) * 2014-06-24 2016-03-22 Applied Materials, Inc. Method of forming III-V channel
US9306019B2 (en) * 2014-08-12 2016-04-05 GlobalFoundries, Inc. Integrated circuits with nanowires and methods of manufacturing the same
EP3136446A1 (fr) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Dispositif tft et procédé de fabrication
US9614068B2 (en) * 2015-09-02 2017-04-04 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
KR102343470B1 (ko) 2016-01-28 2021-12-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR102340313B1 (ko) 2016-03-02 2021-12-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN108987274B (zh) * 2017-06-05 2021-07-30 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10553495B2 (en) * 2017-10-19 2020-02-04 International Business Machines Corporation Nanosheet transistors with different gate dielectrics and workfunction metals
US10608083B2 (en) 2018-08-31 2020-03-31 International Business Machines Corporation Non-planar field effect transistor devices with low-resistance metallic gate structures
US11368016B2 (en) 2020-03-18 2022-06-21 Mavagail Technology, LLC ESD protection for integrated circuit devices

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Also Published As

Publication number Publication date
US20080277691A1 (en) 2008-11-13
WO2007077194A1 (fr) 2007-07-12
FR2895835A1 (fr) 2007-07-06
JP2009522760A (ja) 2009-06-11
US8492232B2 (en) 2013-07-23
EP1966819A1 (fr) 2008-09-10
US20110281412A1 (en) 2011-11-17

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