JP2003317971A - 発光装置およびその作製方法 - Google Patents

発光装置およびその作製方法

Info

Publication number
JP2003317971A
JP2003317971A JP2002125970A JP2002125970A JP2003317971A JP 2003317971 A JP2003317971 A JP 2003317971A JP 2002125970 A JP2002125970 A JP 2002125970A JP 2002125970 A JP2002125970 A JP 2002125970A JP 2003317971 A JP2003317971 A JP 2003317971A
Authority
JP
Japan
Prior art keywords
electrode
light
emitting device
light emitting
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002125970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003317971A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Tetsushi Seo
哲史 瀬尾
Hideaki Kuwabara
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002125970A priority Critical patent/JP2003317971A/ja
Priority to US10/422,380 priority patent/US7402948B2/en
Publication of JP2003317971A publication Critical patent/JP2003317971A/ja
Publication of JP2003317971A5 publication Critical patent/JP2003317971A5/ja
Priority to US12/157,594 priority patent/US8044580B2/en
Priority to US13/279,478 priority patent/US8497628B2/en
Priority to US13/952,863 priority patent/US8803418B2/en
Priority to US14/456,261 priority patent/US9412804B2/en
Priority to US15/226,251 priority patent/US9853098B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002125970A 2002-04-26 2002-04-26 発光装置およびその作製方法 Withdrawn JP2003317971A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002125970A JP2003317971A (ja) 2002-04-26 2002-04-26 発光装置およびその作製方法
US10/422,380 US7402948B2 (en) 2002-04-26 2003-04-24 Light emitting device
US12/157,594 US8044580B2 (en) 2002-04-26 2008-06-11 Light emitting device and manufacturing method of the same
US13/279,478 US8497628B2 (en) 2002-04-26 2011-10-24 Light emitting device and manufacturing method of the same
US13/952,863 US8803418B2 (en) 2002-04-26 2013-07-29 Light emitting device and manufacturing method of the same
US14/456,261 US9412804B2 (en) 2002-04-26 2014-08-11 Light emitting device and manufacturing method of the same
US15/226,251 US9853098B2 (en) 2002-04-26 2016-08-02 Light emitting device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002125970A JP2003317971A (ja) 2002-04-26 2002-04-26 発光装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2003317971A true JP2003317971A (ja) 2003-11-07
JP2003317971A5 JP2003317971A5 (https=) 2005-09-22

Family

ID=29243781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002125970A Withdrawn JP2003317971A (ja) 2002-04-26 2002-04-26 発光装置およびその作製方法

Country Status (2)

Country Link
US (6) US7402948B2 (https=)
JP (1) JP2003317971A (https=)

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209633A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の作製方法
JP2005331665A (ja) * 2004-05-19 2005-12-02 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2006012585A (ja) * 2004-06-25 2006-01-12 Kyocera Corp 有機ｅｌ表示パネルとその製法
JP2006049393A (ja) * 2004-07-30 2006-02-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006049395A (ja) * 2004-07-30 2006-02-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006049396A (ja) * 2004-07-30 2006-02-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006049394A (ja) * 2004-07-30 2006-02-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006066380A (ja) * 2004-07-30 2006-03-09 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006066379A (ja) * 2004-07-30 2006-03-09 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006098663A (ja) * 2004-09-29 2006-04-13 Casio Comput Co Ltd ディスプレイパネル
JP2006114499A (ja) * 2004-10-11 2006-04-27 Samsung Sdi Co Ltd 有機エレクトロルミネッセンス表示装置及びその製造方法
JP2006156828A (ja) * 2004-11-30 2006-06-15 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2006210845A (ja) * 2005-01-31 2006-08-10 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2007141821A (ja) * 2005-10-17 2007-06-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007149605A (ja) * 2005-11-30 2007-06-14 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
JP2007273409A (ja) * 2006-03-31 2007-10-18 Tdk Corp 画像表示装置及びその製造方法
WO2008047716A1 (fr) * 2006-10-18 2008-04-24 Toshiba Matsushita Display Technology Co., Ltd. Dispositif d'affichage
US7446338B2 (en) 2004-09-29 2008-11-04 Casio Computer Co., Ltd. Display panel
US7449833B2 (en) 2003-11-07 2008-11-11 Seiko Epson Corporation Light-emitting device having openings in electrode
JP2009151955A (ja) * 2007-12-18 2009-07-09 Sony Corp 面発光光源およびその製造方法
US7579767B2 (en) 2004-05-28 2009-08-25 Samsung Mobile Display Co., Ltd. Organic light emitting device having triple layered pixel electrode
JP2009206041A (ja) * 2008-02-29 2009-09-10 Sony Corp 有機発光装置およびその製造方法
US7663142B2 (en) 2002-06-28 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2011134706A (ja) * 2009-11-24 2011-07-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives エレクトロルミネッセンス画面を有する電子表示装置と電子表示装置の製造方法
JP2011171053A (ja) * 2010-02-17 2011-09-01 Hitachi Displays Ltd 表示装置
JP2012230928A (ja) * 2006-06-19 2012-11-22 Sony Corp 発光表示装置およびその製造方法
JP2013020986A (ja) * 2005-03-25 2013-01-31 Semiconductor Energy Lab Co Ltd 発光装置
US8441185B2 (en) 2005-10-17 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with improved pixel arrangement
KR101296657B1 (ko) * 2007-09-13 2013-08-14 엘지디스플레이 주식회사 유기전계발광소자 및 그 제조방법
KR101308466B1 (ko) 2007-10-08 2013-09-16 엘지디스플레이 주식회사 유기전계발광소자 및 그 제조방법
JP2013186448A (ja) * 2012-03-12 2013-09-19 Sony Corp 表示パネル、表示装置および電子機器
KR101319343B1 (ko) 2007-10-23 2013-10-16 엘지디스플레이 주식회사 유기전계발광소자 및 그 제조방법
US8659021B2 (en) 2010-12-14 2014-02-25 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
US8716758B2 (en) 2010-10-01 2014-05-06 Samsung Display Co., Ltd. Thin film transistor and organic light-emitting display
JP2014107266A (ja) * 2012-11-29 2014-06-09 Samsung Display Co Ltd 有機電界発光装置
KR20140116024A (ko) * 2013-03-21 2014-10-01 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 인캡슐레이션 방법 및 관련 장치
US8927970B2 (en) 2007-09-13 2015-01-06 Lg Display Co., Ltd. Organic electroluminescence device and method for manufacturing the same
JP2015046239A (ja) * 2013-08-27 2015-03-12 セイコーエプソン株式会社 発光装置、発光装置の製造方法、電子機器
WO2024052950A1 (ja) * 2022-09-05 2024-03-14 シャープディスプレイテクノロジー株式会社 表示装置
JP2024526457A (ja) * 2022-06-16 2024-07-19 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 表示パネル及びその製造方法、表示装置

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US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) * 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7164155B2 (en) * 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7897979B2 (en) * 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4216008B2 (ja) 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
US7109650B2 (en) * 2002-07-08 2006-09-19 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device and method of fabricating the same
CN100370491C (zh) * 2002-12-10 2008-02-20 株式会社半导体能源研究所 发光装置及其制作方法
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
JP3915734B2 (ja) 2003-05-12 2007-05-16 ソニー株式会社 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置
KR100527193B1 (ko) * 2003-06-03 2005-11-08 삼성에스디아이 주식회사 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법
JP2005019211A (ja) * 2003-06-26 2005-01-20 Casio Comput Co Ltd Ｅｌ表示パネル及びｅｌ表示パネルの製造方法
EP1505666B1 (en) * 2003-08-05 2018-04-04 LG Display Co., Ltd. Top-emission active matrix organic electroluminescent display device and method for fabricating the same
KR100552972B1 (ko) 2003-10-09 2006-02-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR100611152B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 평판표시장치
KR100581901B1 (ko) * 2004-02-06 2006-05-22 삼성에스디아이 주식회사 액티브 매트릭스형 유기전계발광소자
JP2005317476A (ja) * 2004-04-30 2005-11-10 Toshiba Matsushita Display Technology Co Ltd 表示装置
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
KR100635065B1 (ko) * 2004-05-17 2006-10-16 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조방법
JP2006012786A (ja) * 2004-06-22 2006-01-12 Samsung Sdi Co Ltd 有機電界発光素子、並びに該製造方法
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
KR100607520B1 (ko) * 2004-11-11 2006-08-02 엘지전자 주식회사 유기 전계발광표시소자 및 그 제조방법
KR100700643B1 (ko) * 2004-11-29 2007-03-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
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US20140027803A1 (en) 2014-01-30
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US20080252207A1 (en) 2008-10-16
US20160343793A1 (en) 2016-11-24
US9853098B2 (en) 2017-12-26
US8803418B2 (en) 2014-08-12
US20120098013A1 (en) 2012-04-26
US9412804B2 (en) 2016-08-09
US7402948B2 (en) 2008-07-22
US8497628B2 (en) 2013-07-30
US20140346492A1 (en) 2014-11-27

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