EP2507174B1 - Verfahren zur herstellung von halogenierten polysilanen - Google Patents
Verfahren zur herstellung von halogenierten polysilanen Download PDFInfo
- Publication number
- EP2507174B1 EP2507174B1 EP10793199.0A EP10793199A EP2507174B1 EP 2507174 B1 EP2507174 B1 EP 2507174B1 EP 10793199 A EP10793199 A EP 10793199A EP 2507174 B1 EP2507174 B1 EP 2507174B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- process according
- halogenated
- siloxane
- compounds
- polysilanes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 229920000548 poly(silane) polymer Polymers 0.000 title claims description 71
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 49
- -1 siloxanes Chemical class 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 239000007800 oxidant agent Substances 0.000 claims description 18
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052794 bromium Inorganic materials 0.000 claims description 9
- 238000004821 distillation Methods 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910052740 iodine Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical group 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000000460 chlorine Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910003902 SiCl 4 Inorganic materials 0.000 description 7
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 235000008753 Papaver somniferum Nutrition 0.000 description 4
- 240000001090 Papaver somniferum Species 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000005660 chlorination reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000003642 reactive oxygen metabolite Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- IHJMWZWIJOZWNP-XCNLKJTESA-N (3s,10s,13r,14r,17s)-17-[(2r)-6-amino-6-methylheptan-2-yl]-4,4,10,13,14-pentamethyl-2,3,5,6,7,11,12,15,16,17-decahydro-1h-cyclopenta[a]phenanthren-3-ol Chemical class C([C@@]12C)C[C@H](O)C(C)(C)C1CCC1=C2CC[C@]2(C)[C@H]([C@@H](CCCC(C)(C)N)C)CC[C@]21C IHJMWZWIJOZWNP-XCNLKJTESA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000010338 boric acid Nutrition 0.000 description 1
- 125000005619 boric acid group Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000012847 fine chemical Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 description 1
- HBRQJAUWUBMFJF-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyloxy)silyl]silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)[Si](Cl)(Cl)Cl HBRQJAUWUBMFJF-UHFFFAOYSA-N 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Definitions
- the present invention relates to a process for producing halogenated polysilanes as a pure compound or mixture of compounds, which has a particular purity with respect to, inter alia, boron-containing compounds.
- Halogenated polysilanes are used, for example, to produce high-purity silicon in semiconductor technology, for example in the solar cell industry. For this reason, very high purities for halogenated polysilanes are often required.
- the PCT application WO 2009/047238 A1 describes a process for the preparation of high-purity hexachlorodisilane in which water is present during the distillation of a hexachlorodisilane-containing mixture in quantities of at most 10 ppbw ( p arts p er b illion per w eight). This document describes that, inter alia, the reaction of water with chlorosilanes can lead to the formation of disiloxanes which adversely affect the purity of the desired hexachlorodisilane.
- boron-containing impurities in the halogenated polysilanes with siloxanes forms compounds, for example boric acids whose volatility and / or solubility differs from the halogenated polysilanes the consequence that these formed boron-containing compounds in a subsequent process step b) of the halogenated polysilane can be separated so that a halogenated polysilane results in increased purity.
- a maximum of 1 ppmw of water is present during the process according to the invention. This can be achieved, for example, by drying the halogenated polysilane mixtures introduced or the starting materials for forming the halogenated polysilanes, it being possible for the drying to be carried out by any desired, previously known process for drying gases and liquids.
- the siloxane-forming oxidants for example, release reactive oxygen species, which can primarily attack bonds between two Si atoms to form siloxanes.
- siloxanes for example, compounds of the following general formula R 1 R 2 R 3 Si-O-SiR 9 R 5 R 6 , where R 1 to R 6 independently of one another can be Cl, F, Br, I, H, SiR 1 R 2 R 3 and -O-SiR 1 R 2 R 3 , be used.
- These siloxanes can also comprise disiloxanes, for example hexachlorodisiloxane, which can be formed, for example, by reaction of oxygen or reactive oxygen species with hexachlorodisilane.
- siloxane compound and the trichlorosilyl-pentachlorodisiloxane is possible, which can be formed for example by reaction of octachlorotrisilane with oxygen.
- the general formula also includes siloles which have an Si-OH group. Also possible are siloxanes with more than one Si-OS bond.
- siloxanes or siloxane-forming oxidants, on the other hand, are not prone to moisture, such as water, to undergo uncontrolled polymerizations with halogenated polysilanes that favor the formation of "poppy gels" or solid silica-like deposits in the equipment.
- Siloxanes can also be added in process step a), for example, by adding halogenated polysilanes which already contain relatively large amounts of siloxanes.
- oxidizing agent which promotes the formation of siloxane for example, dry oxygen, dry air, ozone, phosphine oxides and combinations thereof can be used.
- Phosphine oxides are particularly useful for removing boron-containing halogenated polysilane impurities which are later used to produce high purity Silicon to be doped with phosphorus.
- boron-containing impurities stoichiometric amounts of siloxanes or siloxane-forming oxidants.
- siloxanes or siloxane-forming oxidants preferably at least 10 ppbw, more preferably at least 100 ppbw of siloxane, or siloxane-forming oxidizing agent in process step a) are added.
- a significant oxygen content in the halogenated polysilanes for many applications for example, in the photovoltaic technology is not desirable, so still preferably a maximum of 10 ppmw ( p arts p er m illon per w eight) of a siloxane-forming oxidizing agent or siloxane can be added to prevent that after the reaction of the siloxane-forming oxidizing agent or the siloxane itself with the boron-containing impurities too large an excess of oxygen-containing compounds in the halogenated polysilanes remains.
- the halogenated polysilanes can be produced in a mixture in which the siloxanes or the siloxane-forming oxidizing agents are also added.
- the halogenated polysilanes can be subject to partial degradation by means of chlorination resulting in particularly kinetically stable halogenated polysilanes having a large number of branches in the main chain, the chlorine gas used for the chlorination simultaneously containing at least 1 ppbw siloxane or Siloxane-forming oxidizing agent, so that the halogenated polysilanes formed by the chlorination can be cleaned very easily at the same time by the reaction of the siloxanes with the boron-containing impurities.
- metal-containing impurities may additionally be present in the halogenated polysilane which, with the siloxane-forming oxidizing agent or siloxane itself, likewise form compounds which have a different volatility and / or solubility than the halogenated polysilanes.
- impurities may be present, for example, titanium, iron, tin, and / or aluminum-containing impurities or combinations thereof which can form with the siloxanes
- Polyoximetallate for example Heteropolymetallate easily separated, for example by distillation or other methods of the halogenated polysilanes can be.
- Phosphorus-containing impurities can also form compounds with the siloxanes.
- any contaminated mixtures of halogenated polysilanes or even individual compounds of halogenated polysilanes for example hexachlorodisilane, octachlorotrisilane or dodecachloroneopentasilane, or any other silanes provided only with the impurities.
- monosilanes can be converted to the halogenated polysilanes, for example with inert gases, such as nitrogen or together with reducing agents, such as hydrogen, for example by thermal or plasma-chemical processes.
- inert gases such as nitrogen
- reducing agents such as hydrogen
- process step a) it is possible to work in process step a) at temperatures from room temperature to 150 ° C. Some of the halogenated polysilanes dissolve only at elevated temperatures.
- halogenated polysilanes In comparison to the short-chain halogenated polysilanes with chain lengths n between 3 and 10, which can be separated particularly well by distillation from mixtures, the compounds formed by reaction of the siloxanes with the boron-containing impurities are often difficult to dissolve and / or hardly volatile, so that particularly easily by means of distillation, the halogenated polysilanes can be separated from the impurities, resulting in halogenated polysilanes with an increased purity.
- halogenated polysilanes from a chain length of 5 Si atoms and crystallization methods for separation can be used.
- separation of the impurities from the halogenated polysilanes can also be carried out in process step b) by means of sublimation, crystallization and / or zone melting.
- zone melting the boron-containing compounds preferably concentrate in the melt, so that they can be easily separated from the halogenated polysilanes.
- Separation of the compounds formed by the reaction of siloxanes with boron-containing impurities can also be carried out by crystallization in some short-chain polysilanes, for example dodecachlorneopentasilane and / or neo-Si 6 Cl 14 , since these halogenated polysilanes are particularly readily crystallized from mixtures of halogenated polysilanes.
- HCl is present in quantities of up to 10% by mass, preferably up to 1% by mass, during the separation of the polysilanes, since hydrogen chloride can favor the formation of compounds by reaction of the siloxanes with the boron- and / or metal-containing impurities , HCl can also originate from the production process of the halogenated polysilanes or be added separately.
- no water is present, so that the formation of friction-sensitive decomposition products, the "poppy gels" and the insoluble solids, such as the silica-like deposits can be largely avoided.
- alcohols and / or armines can be present in quantities of at most 1 ppmw.
- Amines as well as alcohols can lead to reactions and rearrangements and should therefore be avoided if possible.
- process step b) the formation of further siloxanes can be avoided.
- This can be particularly advantageous if, in process step a), it is already ensured that sufficient quantities of siloxanes are formed, so that after reaction of the siloxanes with the boron- and metal-containing impurities only minute amounts of the siloxanes remain in the halogenated polysilane mixtures.
- the hydrogen content of the halogenated polysilanes may be less than 2 atomic%, in particular less than 1 Be atomic%.
- the halogenated polysilanes may also contain halogen substituents of several different halogens.
- the substituents of the halogenated polysilane can consist exclusively of halogen.
- the halogenated polysilanes can be obtained as fine chemicals with a very high degree of purity of at least 99.5%.
- the impurities can be less than 10 ppm.
- the iron content goes from ⁇ 100 ⁇ g / kg in SiCl 4 to ⁇ 10 ⁇ g / kg in Si 2 Cl 6 and the content of aluminum goes from ⁇ 100 ⁇ g / kg in SiCl 4 to ⁇ 20 ⁇ g / kg in Si 2 Cl 6 back.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Polymers (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009056731A DE102009056731A1 (de) | 2009-12-04 | 2009-12-04 | Halogenierte Polysilane und Polygermane |
PCT/EP2010/068993 WO2011067416A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von halogenierten polysilanen |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2507174A1 EP2507174A1 (de) | 2012-10-10 |
EP2507174B1 true EP2507174B1 (de) | 2013-11-06 |
Family
ID=43499339
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10793199.0A Revoked EP2507174B1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von halogenierten polysilanen |
EP10787448A Withdrawn EP2507169A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zum entfernen von verunreinigungen aus silicium |
EP10787451A Withdrawn EP2507299A2 (de) | 2009-12-04 | 2010-12-06 | Chlorierte oligogermane und verfahren zu deren herstellung |
EP10788316A Withdrawn EP2507171A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von hydriertem polygermasilan und hydriertes polygermasilan |
EP10787123A Withdrawn EP2507317A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von hydriertem polygerman und hydriertes polygerman |
EP10792879.8A Not-in-force EP2507172B1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von oligosilanen |
EP10787124.6A Revoked EP2507296B1 (de) | 2009-12-04 | 2010-12-06 | Kinetisch stabile chlorierte polysilane und deren herstellung und verwendung |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10787448A Withdrawn EP2507169A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zum entfernen von verunreinigungen aus silicium |
EP10787451A Withdrawn EP2507299A2 (de) | 2009-12-04 | 2010-12-06 | Chlorierte oligogermane und verfahren zu deren herstellung |
EP10788316A Withdrawn EP2507171A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von hydriertem polygermasilan und hydriertes polygermasilan |
EP10787123A Withdrawn EP2507317A1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von hydriertem polygerman und hydriertes polygerman |
EP10792879.8A Not-in-force EP2507172B1 (de) | 2009-12-04 | 2010-12-06 | Verfahren zur herstellung von oligosilanen |
EP10787124.6A Revoked EP2507296B1 (de) | 2009-12-04 | 2010-12-06 | Kinetisch stabile chlorierte polysilane und deren herstellung und verwendung |
Country Status (9)
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
CN102918684B (zh) | 2010-05-28 | 2016-09-14 | 巴斯夫欧洲公司 | 膨胀石墨在锂/硫电池组中的用途 |
KR101250172B1 (ko) * | 2012-08-20 | 2013-04-05 | 오씨아이머티리얼즈 주식회사 | 고수율로 모노 게르만 가스를 제조하는 방법 |
DE102012224202A1 (de) * | 2012-12-21 | 2014-07-10 | Evonik Industries Ag | Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen |
DE102013207447A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan |
DE102013207444A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
US9174853B2 (en) | 2013-12-06 | 2015-11-03 | Gelest Technologies, Inc. | Method for producing high purity germane by a continuous or semi-continuous process |
DE102014007766A1 (de) * | 2014-05-21 | 2015-11-26 | Psc Polysilane Chemicals Gmbh | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
DE102014007768B4 (de) | 2014-05-21 | 2025-07-03 | Sven Holl | Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12 |
DE102014007685B4 (de) | 2014-05-21 | 2022-04-07 | Sven Holl | Verfahren zur Herstellung von Hexachlordisilan |
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