DE69635239T2 - Verfahren zur Herstellung einer Flüssigkristall-Anzeige - Google Patents

Verfahren zur Herstellung einer Flüssigkristall-Anzeige Download PDF

Info

Publication number
DE69635239T2
DE69635239T2 DE69635239T DE69635239T DE69635239T2 DE 69635239 T2 DE69635239 T2 DE 69635239T2 DE 69635239 T DE69635239 T DE 69635239T DE 69635239 T DE69635239 T DE 69635239T DE 69635239 T2 DE69635239 T2 DE 69635239T2
Authority
DE
Germany
Prior art keywords
metal film
film
forming
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635239T
Other languages
German (de)
English (en)
Other versions
DE69635239D1 (de
Inventor
Jueng-gil Bundang-gu Lee
Jung-ho Suwon-city Lee
Hyo-rak Icheon-eub Nam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36627376&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69635239(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1019950042618A external-priority patent/KR0183757B1/ko
Priority claimed from KR1019960013912A external-priority patent/KR100219480B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69635239D1 publication Critical patent/DE69635239D1/de
Application granted granted Critical
Publication of DE69635239T2 publication Critical patent/DE69635239T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE69635239T 1995-11-21 1996-11-19 Verfahren zur Herstellung einer Flüssigkristall-Anzeige Expired - Lifetime DE69635239T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR9542618 1995-11-21
KR1019950042618A KR0183757B1 (ko) 1995-11-21 1995-11-21 박막 트랜지스터-액정 표시장치의 제조방법
KR1019960013912A KR100219480B1 (ko) 1995-11-29 1996-04-30 박막트랜지스터 액정표시장치 및 그 제조방법
KR9613912 1996-04-30

Publications (2)

Publication Number Publication Date
DE69635239D1 DE69635239D1 (de) 2005-11-10
DE69635239T2 true DE69635239T2 (de) 2006-07-06

Family

ID=36627376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635239T Expired - Lifetime DE69635239T2 (de) 1995-11-21 1996-11-19 Verfahren zur Herstellung einer Flüssigkristall-Anzeige

Country Status (5)

Country Link
US (5) US6008065A (enExample)
EP (2) EP1338914A3 (enExample)
JP (5) JP3891617B2 (enExample)
DE (1) DE69635239T2 (enExample)
TW (1) TW426809B (enExample)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866783B2 (ja) * 1995-07-25 2007-01-10 株式会社 日立ディスプレイズ 液晶表示装置
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
KR100190023B1 (ko) * 1996-02-29 1999-06-01 윤종용 박막트랜지스터-액정표시장치 및 그 제조방법
US6940566B1 (en) 1996-11-26 2005-09-06 Samsung Electronics Co., Ltd. Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
JP3760008B2 (ja) * 1996-11-29 2006-03-29 セイコーエプソン株式会社 液晶パネル用基板およびそれを用いた液晶パネル並びに投写型表示装置
KR100229613B1 (ko) * 1996-12-30 1999-11-15 구자홍 액정 표시 장치 및 제조 방법
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100248123B1 (ko) 1997-03-04 2000-03-15 구본준 박막트랜지스터및그의제조방법
KR100392909B1 (ko) * 1997-08-26 2004-03-22 엘지.필립스 엘시디 주식회사 박막트랜지스터및그의제조방법
KR100252306B1 (ko) * 1997-07-04 2000-04-15 구본준, 론 위라하디락사 액티브 매트릭스 기판 및 그 제조방법
KR100338008B1 (ko) * 1997-11-20 2002-10-25 삼성전자 주식회사 질화 몰리브덴-금속 합금막과 그의 제조 방법, 액정표시장치용 배선과 그의 제조 방법 및 액정 표시 장치와 그의 제조방법
KR100276442B1 (ko) * 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
JPH11258632A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板
JPH11258633A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板の製造方法
JP4458563B2 (ja) * 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
KR100482167B1 (ko) * 1998-07-30 2005-07-18 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
US6297519B1 (en) * 1998-08-28 2001-10-02 Fujitsu Limited TFT substrate with low contact resistance and damage resistant terminals
USRE39452E1 (en) * 1998-08-28 2007-01-02 Fujitsu Limited TFT substrate with low contact resistance and damage resistant terminals
KR100303446B1 (ko) * 1998-10-29 2002-10-04 삼성전자 주식회사 액정표시장치용박막트랜지스터기판의제조방법
US6368978B1 (en) * 1999-03-04 2002-04-09 Applied Materials, Inc. Hydrogen-free method of plasma etching indium tin oxide
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
JP4627843B2 (ja) 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
TW428328B (en) * 1999-07-30 2001-04-01 Hannstar Display Corp Fabricating method of thin film transistor
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
GB9919913D0 (en) * 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
KR100632216B1 (ko) * 1999-12-16 2006-10-09 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100601177B1 (ko) * 2000-02-10 2006-07-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP2001281698A (ja) * 2000-03-30 2001-10-10 Advanced Display Inc 電気光学素子の製法
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
TW447138B (en) * 2000-04-28 2001-07-21 Unipac Optoelectronics Corp Manufacturing method of thin-film transistor
JP2001343659A (ja) * 2000-06-02 2001-12-14 Casio Comput Co Ltd アクティブマトリクス型液晶表示パネルおよびその製造方法
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6798064B1 (en) * 2000-07-12 2004-09-28 Motorola, Inc. Electronic component and method of manufacture
TWI253538B (en) * 2000-09-30 2006-04-21 Au Optronics Corp Thin film transistor flat display and its manufacturing method
KR100400765B1 (ko) * 2000-11-13 2003-10-08 엘지.필립스 엘시디 주식회사 박막 형성방법 및 이를 적용한 액정표시소자의 제조방법
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
KR100715943B1 (ko) * 2001-01-29 2007-05-08 삼성전자주식회사 액정표시장치 및 그 제조방법
JP4410951B2 (ja) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 パターン形成方法および液晶表示装置の製造方法
SG179310A1 (en) 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
JP4920140B2 (ja) 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
JP2003172946A (ja) * 2001-09-28 2003-06-20 Fujitsu Display Technologies Corp 液晶表示装置用基板及びそれを用いた液晶表示装置
JP4723787B2 (ja) * 2002-07-09 2011-07-13 シャープ株式会社 電界効果型トランジスタ、その製造方法及び画像表示装置
KR100484092B1 (ko) * 2002-12-26 2005-04-18 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
KR100497095B1 (ko) 2002-12-26 2005-06-28 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자용 어레이 기판 및 그 제조방법
KR100503129B1 (ko) * 2002-12-28 2005-07-22 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
KR100500147B1 (ko) 2002-12-31 2005-07-07 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
TW589663B (en) * 2003-05-12 2004-06-01 Au Optronics Corp Flat panel display and manufacturing method thereof
JP4517063B2 (ja) * 2003-05-27 2010-08-04 日本電気株式会社 液晶表示装置
KR100566612B1 (ko) * 2003-09-23 2006-03-31 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
JP3769564B2 (ja) * 2003-10-06 2006-04-26 セイコーエプソン株式会社 液晶パネル用基板およびそれを用いた液晶パネル並びに投写型表示装置
KR101023978B1 (ko) * 2004-03-18 2011-03-28 삼성전자주식회사 반투과 액정표시장치의 제조방법과 이에 의한 액정표시장치
KR101087398B1 (ko) 2004-06-30 2011-11-25 엘지디스플레이 주식회사 액정표시장치의 패드 구조 및 그 제조방법
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
JP2006178426A (ja) * 2004-11-24 2006-07-06 Sanyo Electric Co Ltd 表示装置および表示装置の製造方法
US7049163B1 (en) * 2005-03-16 2006-05-23 Chunghwa Picture Tubes, Ltd. Manufacture method of pixel structure
KR20060125066A (ko) * 2005-06-01 2006-12-06 삼성전자주식회사 개구율이 향상된 어레이 기판 및 이의 제조방법
KR20070009013A (ko) * 2005-07-14 2007-01-18 삼성전자주식회사 평판표시장치 및 평판표시장치의 제조방법
US7601566B2 (en) * 2005-10-18 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007114360A (ja) 2005-10-19 2007-05-10 Nec Lcd Technologies Ltd 薄膜トランジスタを備えた液晶表示装置及びその製造方法
JP4544532B2 (ja) * 2006-03-03 2010-09-15 東京エレクトロン株式会社 基板処理方法
JP4842709B2 (ja) * 2006-05-31 2011-12-21 株式会社 日立ディスプレイズ 表示装置の製造方法
US7749907B2 (en) * 2006-08-25 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7932183B2 (en) * 2006-11-14 2011-04-26 Mitsubishi Electric Corporation Method of manufacturing multilayer thin film pattern and display device
KR20080078164A (ko) * 2007-02-22 2008-08-27 삼성전자주식회사 액정 표시 장치의 제조 방법
US8110829B2 (en) * 2007-05-31 2012-02-07 Lg Display Co., Ltd. Array substrate of liquid crystal display and method for fabricating the same
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP5250832B2 (ja) * 2007-07-09 2013-07-31 ゴールドチャームリミテッド アクティブマトリクス駆動表示装置
KR101308534B1 (ko) * 2007-07-18 2013-09-23 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
TWI348765B (en) * 2007-08-29 2011-09-11 Au Optronics Corp Pixel structure and fabricating method for thereof
JP5357493B2 (ja) * 2007-10-23 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5427390B2 (ja) 2007-10-23 2014-02-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101448903B1 (ko) * 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP5380037B2 (ja) 2007-10-23 2014-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
WO2009072451A1 (en) 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN101217153B (zh) * 2008-01-18 2012-02-29 友达光电股份有限公司 主动元件阵列结构及其制造方法
US8035107B2 (en) * 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
CN101939694B (zh) 2008-02-27 2014-01-29 株式会社半导体能源研究所 液晶显示器件及其制造方法以及电子装置
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) * 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7989275B2 (en) * 2008-03-10 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US7985605B2 (en) * 2008-04-17 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7790483B2 (en) * 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US20100138765A1 (en) * 2008-11-30 2010-06-03 Nokia Corporation Indicator Pop-Up
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7989234B2 (en) * 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) * 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5539765B2 (ja) * 2009-03-26 2014-07-02 株式会社半導体エネルギー研究所 トランジスタの作製方法
US20120242624A1 (en) * 2009-11-27 2012-09-27 Sharp Kabushiki Kaisha Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display
KR20130023021A (ko) 2010-06-21 2013-03-07 파나소닉 주식회사 실리콘 박막의 결정화 방법 및 실리콘 ｔｆｔ 장치의 제조 방법
TWM423257U (en) * 2011-06-01 2012-02-21 Chunghwa Picture Tubes Ltd Pixel array substrate and display panel
CN102637632B (zh) * 2011-06-10 2014-12-10 京东方科技集团股份有限公司 一种薄膜晶体管阵列的制作方法和薄膜晶体管阵列
JP5411236B2 (ja) * 2011-11-15 2014-02-12 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
KR101932495B1 (ko) * 2012-05-11 2018-12-27 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
CN102956551B (zh) * 2012-11-02 2015-01-07 京东方科技集团股份有限公司 阵列基板的制作方法、阵列基板及显示装置
CN103928453B (zh) 2013-01-11 2016-09-28 北京京东方光电科技有限公司 一种阵列基板及其制造方法
TWI582967B (zh) * 2014-04-01 2017-05-11 鴻海精密工業股份有限公司 顯示陣列基板及顯示陣列基板的製造方法
CN103972243B (zh) * 2014-04-24 2017-03-29 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN104375344B (zh) * 2014-11-21 2017-09-15 深圳市华星光电技术有限公司 液晶显示面板及其彩膜阵列基板
CN106057667B (zh) * 2016-07-06 2019-02-05 京东方科技集团股份有限公司 膜层图案的制作方法、基板的制作方法及基板、显示装置
CN107706196B (zh) * 2017-09-28 2021-05-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
KR102708891B1 (ko) * 2019-11-01 2024-09-25 삼성디스플레이 주식회사 광 센서의 제조 방법
KR20210101353A (ko) 2020-02-07 2021-08-19 삼성디스플레이 주식회사 도전 패턴의 제조 방법, 표시 장치 및 이의 제조 방법
CN111584520B (zh) * 2020-05-25 2023-09-12 成都京东方显示科技有限公司 阵列基板、显示面板以及阵列基板的制作方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863150A (ja) 1981-10-12 1983-04-14 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6144468A (ja) 1984-08-09 1986-03-04 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS61193128A (ja) * 1985-02-21 1986-08-27 Mitsubishi Electric Corp マトリクス型表示装置
JPS62285464A (ja) * 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板及びその製造方法
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JPS6484668A (en) 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
GB2211362A (en) * 1987-10-15 1989-06-28 Johnson Electric Ind Mfg Fuel pump motor
JPH01151236A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp アルミニウム膜のテーパーエツチング方法
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JPH0816756B2 (ja) 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
US5153754A (en) 1989-06-30 1992-10-06 General Electric Company Multi-layer address lines for amorphous silicon liquid crystal display devices
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
JP2940689B2 (ja) 1990-03-23 1999-08-25 三洋電機株式会社 アクティブマトリクス型表示装置の薄膜トランジスタアレイ及びその製造方法
JP2813234B2 (ja) 1990-05-16 1998-10-22 日本電信電話株式会社 配線構造
US5162933A (en) 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
US5156986A (en) 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
JPH04155315A (ja) 1990-10-19 1992-05-28 Hitachi Ltd 多層膜配線体の製造方法
JPH04213427A (ja) 1990-12-11 1992-08-04 Fujitsu Ltd 多層金属膜電極配線の製造方法
JPH04234930A (ja) * 1991-01-10 1992-08-24 Shimano Inc 釣り用リール
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH04326330A (ja) 1991-04-26 1992-11-16 Sharp Corp 液晶表示装置およびその製造方法
JP2667304B2 (ja) 1991-05-13 1997-10-27 シャープ株式会社 アクティブマトリクス基板
JP3094610B2 (ja) 1991-12-13 2000-10-03 カシオ計算機株式会社 薄膜トランジスタの製造方法
US5334859A (en) * 1991-09-05 1994-08-02 Casio Computer Co., Ltd. Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film
JPH05142570A (ja) 1991-11-20 1993-06-11 Sharp Corp アクテイブマトリクス基板
JPH05142554A (ja) * 1991-11-25 1993-06-11 Matsushita Electric Ind Co Ltd アクテイブマトリクス基板
JPH05165056A (ja) 1991-12-17 1993-06-29 Oki Electric Ind Co Ltd アクティブマトリックス液晶ディスプレイの下基板の製造方法
JP2674406B2 (ja) * 1992-02-05 1997-11-12 富士通株式会社 半導体装置の製造方法
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
JPH05299655A (ja) * 1992-04-08 1993-11-12 Nec Corp 薄膜トランジスタ
JPH05323373A (ja) 1992-05-22 1993-12-07 Fujitsu Ltd 薄膜トランジスタパネルの製造方法
JPH063698A (ja) * 1992-06-19 1994-01-14 Nec Corp 薄膜トランジスタ装置
KR950008931B1 (ko) * 1992-07-22 1995-08-09 삼성전자주식회사 표시패널의 제조방법
JPH06232398A (ja) * 1992-12-15 1994-08-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法と半導体装置の製造方法
JPH06140296A (ja) 1992-10-26 1994-05-20 Fujitsu Ltd パターン形成方法
JPH06138487A (ja) 1992-10-29 1994-05-20 Hitachi Ltd 半導体装置と液晶表示装置
JPH06160905A (ja) * 1992-11-26 1994-06-07 Sanyo Electric Co Ltd 液晶表示装置およびその製造方法
JPH06168970A (ja) * 1992-11-27 1994-06-14 Fuji Xerox Co Ltd 半導体素子の製造方法
JPH06188419A (ja) * 1992-12-16 1994-07-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
JP3116149B2 (ja) * 1993-01-18 2000-12-11 株式会社日立製作所 配線材料および液晶表示装置
JP2948436B2 (ja) * 1993-03-12 1999-09-13 ローム株式会社 薄膜トランジスタおよびそれを用いる液晶表示装置
JP3573778B2 (ja) * 1993-03-12 2004-10-06 株式会社東芝 液晶表示装置
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
JP2501411B2 (ja) 1993-08-12 1996-05-29 株式会社東芝 アクティブマトリクス型表示装置
JP3281167B2 (ja) 1994-03-17 2002-05-13 富士通株式会社 薄膜トランジスタの製造方法
US5621556A (en) * 1994-04-28 1997-04-15 Xerox Corporation Method of manufacturing active matrix LCD using five masks
JP2755376B2 (ja) * 1994-06-03 1998-05-20 株式会社フロンテック 電気光学素子の製造方法
KR100213402B1 (ko) 1994-09-29 1999-08-02 니시무로 타이죠 전극배선재료 및 이를 이용한 전극배선기판
JPH0964366A (ja) * 1995-08-23 1997-03-07 Toshiba Corp 薄膜トランジスタ
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP4366732B2 (ja) * 1998-09-30 2009-11-18 ソニー株式会社 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US6368227B1 (en) * 2000-11-17 2002-04-09 Steven Olson Method of swinging on a swing

Also Published As

Publication number Publication date
EP0775931A2 (en) 1997-05-28
TW426809B (en) 2001-03-21
US6331443B1 (en) 2001-12-18
USRE41363E1 (en) 2010-06-01
US6008065A (en) 1999-12-28
DE69635239D1 (de) 2005-11-10
EP1338914A2 (en) 2003-08-27
JP2004157554A (ja) 2004-06-03
EP0775931B1 (en) 2005-10-05
JP2006106788A (ja) 2006-04-20
US20020106825A1 (en) 2002-08-08
EP0775931A3 (en) 1998-03-25
JPH09171197A (ja) 1997-06-30
EP1338914A3 (en) 2003-11-19
JP2006148150A (ja) 2006-06-08
JP3891617B2 (ja) 2007-03-14
US6339230B1 (en) 2002-01-15
US6661026B2 (en) 2003-12-09
JP2004006936A (ja) 2004-01-08

Similar Documents

Publication Publication Date Title
DE69635239T2 (de) Verfahren zur Herstellung einer Flüssigkristall-Anzeige
DE69633378T2 (de) Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung
DE68923727T2 (de) Verfahren zur Herstellung eines aktiven Matrixsubstrats.
DE102009044337B4 (de) Arraysubstrat für ein Display sowie Verfahren zum Herstellen desselben
DE3752301T2 (de) Verfahren zur Herstellung eines Dünnschichttransistors
DE69131987T2 (de) Flüssigkristall-Anzeigevorrichtung
DE19839063B4 (de) Flüssigkristallanzeigevorrichtung und Herstellungsverfahren dafür
DE19811624B4 (de) Aktives Paneel für eine LCD und Herstellungsverfahren für ein aktives Paneel einer LCD
DE19808989B4 (de) Dünnschichttransistor und Herstellungsverfahren dafür
DE69120329T2 (de) Anzeigevorrichtung mit aktiver Matrix
DE3884891T2 (de) Aktive Matrixzelle und deren Herstellungsverfahren.
DE69534667T2 (de) Farbanzeigevorrichtung
DE19727212C2 (de) Herstellungsverfahren für einen Dünnschichttransistor, Dünnschichttransistor und daraus aufgebautes Flüssigkristallanzeigepaneel
DE102004051839B4 (de) Verfahren zum Herstellen eines Dünnschichttransistorarray-Substrats
DE19808990C2 (de) Dünnschichttransistor und Herstellungsverfahren dafür
DE69622607T2 (de) Flüssigkristall-Anzeige und Verfahren zu ihrer Herstellung
DE69210886T2 (de) Substrat mit Dünnfilmelementen
DE3486325T2 (de) Verfahren zur Herstellung von Rückwänden für Flachbildschirme.
DE60037707T2 (de) Herstellungsverfahren für dünnfilmtransistoren
DE19623292C2 (de) Flüssigkristallanzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69433948T2 (de) Lift-off Verfahren für selbstausrichtende Dünnschichttransistoren
DE4337849C2 (de) Signalleitungsstruktur für eine Dünnfilmtransistor-Flüssigkristallanzeige und Verfahren zur Herstellung derselben
DE3431155A1 (de) Duennfilm-transistor und verfahren zu dessen herstellung
DE69219073T2 (de) Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung
DE69325849T2 (de) Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8310 Action for declaration of annulment
8313 Request for invalidation rejected/withdrawn