DE69333373D1 - Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften - Google Patents

Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften

Info

Publication number
DE69333373D1
DE69333373D1 DE69333373T DE69333373T DE69333373D1 DE 69333373 D1 DE69333373 D1 DE 69333373D1 DE 69333373 T DE69333373 T DE 69333373T DE 69333373 T DE69333373 T DE 69333373T DE 69333373 D1 DE69333373 D1 DE 69333373D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
jointly
electrically
volatile semiconductor
operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69333373T
Other languages
English (en)
Other versions
DE69333373T2 (de
Inventor
Takao Akaogi
Nobuaki Takashina
Yasushi Kasa
Kiyoshi Itano
Hiromi Kawashima
Minoru Yamashita
Shouichi Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32428492A external-priority patent/JP3347374B2/ja
Priority claimed from JP34948192A external-priority patent/JP3159816B2/ja
Priority claimed from JP00030493A external-priority patent/JP3392165B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69333373D1 publication Critical patent/DE69333373D1/de
Publication of DE69333373T2 publication Critical patent/DE69333373T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/107—Programming all cells in an array, sector or block to the same state prior to flash erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3472—Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/802—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by encoding redundancy signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE69333373T 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften Expired - Fee Related DE69333373T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP32428492 1992-12-03
JP32428492A JP3347374B2 (ja) 1992-12-03 1992-12-03 デコーダ回路及び半導体記憶装置
JP34948192A JP3159816B2 (ja) 1992-12-28 1992-12-28 不揮発性半導体記憶装置
JP34948192 1992-12-28
JP30493 1993-01-05
JP00030493A JP3392165B2 (ja) 1993-01-05 1993-01-05 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69333373D1 true DE69333373D1 (de) 2004-01-29
DE69333373T2 DE69333373T2 (de) 2004-06-24

Family

ID=27274405

Family Applications (8)

Application Number Title Priority Date Filing Date
DE69333631T Expired - Fee Related DE69333631T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333548T Expired - Fee Related DE69333548T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69331090T Expired - Fee Related DE69331090T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften
DE69333263T Expired - Fee Related DE69333263T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften
DE69333549T Expired - Fee Related DE69333549T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333557T Expired - Fee Related DE69333557T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333606T Expired - Fee Related DE69333606T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften
DE69333373T Expired - Fee Related DE69333373T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften

Family Applications Before (7)

Application Number Title Priority Date Filing Date
DE69333631T Expired - Fee Related DE69333631T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333548T Expired - Fee Related DE69333548T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69331090T Expired - Fee Related DE69331090T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften
DE69333263T Expired - Fee Related DE69333263T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften
DE69333549T Expired - Fee Related DE69333549T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333557T Expired - Fee Related DE69333557T2 (de) 1992-12-03 1993-06-25 Halbleiterspeicheranordnung
DE69333606T Expired - Fee Related DE69333606T2 (de) 1992-12-03 1993-06-25 Nichtflüchtiger Halbleiterspeicher mit elektrisch und gemeinsam löschbaren Eigenschaften

Country Status (4)

Country Link
US (10) US5452251A (de)
EP (9) EP1158532B1 (de)
KR (1) KR960007638B1 (de)
DE (8) DE69333631T2 (de)

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EP1176602B1 (de) * 1994-09-13 2004-03-03 Macronix International Co., Ltd. Flash EPROM integrierte Schaltungsarchitektur
JPH08102198A (ja) * 1994-09-30 1996-04-16 Nec Corp 電気的書換え可能な不揮発性半導体記憶装置の初期化方 法
JP3263259B2 (ja) * 1994-10-04 2002-03-04 株式会社東芝 半導体記憶装置
US5765002A (en) * 1995-03-13 1998-06-09 Intel Corporation Method and apparatus for minimizing power consumption in a microprocessor controlled storage device
US5751629A (en) 1995-04-25 1998-05-12 Irori Remotely programmable matrices with memories
US6416714B1 (en) 1995-04-25 2002-07-09 Discovery Partners International, Inc. Remotely programmable matrices with memories
US6329139B1 (en) 1995-04-25 2001-12-11 Discovery Partners International Automated sorting system for matrices with memory
US5874214A (en) 1995-04-25 1999-02-23 Irori Remotely programmable matrices with memories
US6331273B1 (en) 1995-04-25 2001-12-18 Discovery Partners International Remotely programmable matrices with memories
US6017496A (en) 1995-06-07 2000-01-25 Irori Matrices with memories and uses thereof
EP0741387B1 (de) * 1995-05-05 2000-01-12 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit Sektoren, deren Grösse und Anzahl bestimmbar sind
JP3710002B2 (ja) * 1995-08-23 2005-10-26 株式会社日立製作所 半導体記憶装置
FR2760544A1 (fr) * 1997-03-04 1998-09-11 Vernet Sa Thermostat a montage rapide
DE19708962C2 (de) * 1997-03-05 1999-06-24 Siemens Ag Halbleiterdatenspeicher mit einer Redundanzschaltung
JP3214395B2 (ja) * 1997-05-20 2001-10-02 日本電気株式会社 不揮発性半導体記憶装置
US6046945A (en) * 1997-07-11 2000-04-04 Integrated Silicon Solution, Inc. DRAM repair apparatus and method
JP3237699B2 (ja) * 1997-08-11 2001-12-10 日本電気株式会社 半導体記憶装置
US6114903A (en) * 1998-01-14 2000-09-05 Lsi Logic Corporation Layout architecture for core I/O buffer
JPH11339493A (ja) 1998-05-27 1999-12-10 Mitsubishi Electric Corp 同期型半導体記憶装置
US6910152B2 (en) * 1998-08-28 2005-06-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
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JP4446505B2 (ja) * 1999-01-19 2010-04-07 株式会社ルネサステクノロジ 半導体集積回路装置
US6552947B2 (en) * 1999-04-05 2003-04-22 Madrone Solutions, Inc. Memory tile for use in a tiled memory
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