JPS55160394A - Rom writer - Google Patents

Rom writer

Info

Publication number
JPS55160394A
JPS55160394A JP6696579A JP6696579A JPS55160394A JP S55160394 A JPS55160394 A JP S55160394A JP 6696579 A JP6696579 A JP 6696579A JP 6696579 A JP6696579 A JP 6696579A JP S55160394 A JPS55160394 A JP S55160394A
Authority
JP
Japan
Prior art keywords
collative
data
rom1
check
electric power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6696579A
Other languages
Japanese (ja)
Inventor
Fusao Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6696579A priority Critical patent/JPS55160394A/en
Publication of JPS55160394A publication Critical patent/JPS55160394A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To improve the precision of a collative check by making the collative check on written data by varying the electric power voltage of ROM. CONSTITUTION:When data written in EPROM1 are collated with those entered in write data buffer 4, supply-voltage varying circuit 8 is controlled to vary the electric power voltage of ROM1 to an upper-limit value, for example. In this state, data written in ROM1 up are collated with those entered in buffer 4 by collative checking circuit 6. Additionally, voltage varying circuit 8 is controlled again to decrease the electric power voltage of ROM1 down to a lower-limit value and in this state, collation is performed similarly. Thus, insufficiently-written data can be checked and the precision of the collative check and be improved.
JP6696579A 1979-05-30 1979-05-30 Rom writer Pending JPS55160394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6696579A JPS55160394A (en) 1979-05-30 1979-05-30 Rom writer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6696579A JPS55160394A (en) 1979-05-30 1979-05-30 Rom writer

Publications (1)

Publication Number Publication Date
JPS55160394A true JPS55160394A (en) 1980-12-13

Family

ID=13331236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6696579A Pending JPS55160394A (en) 1979-05-30 1979-05-30 Rom writer

Country Status (1)

Country Link
JP (1) JPS55160394A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0524935U (en) * 1991-09-05 1993-04-02 川崎重工業株式会社 Carburetor heating device
US5815440A (en) * 1992-12-03 1998-09-29 Fujitsu Limited Semiconductor memory device with electrically controllable threshold voltage
KR100425217B1 (en) * 2002-01-02 2004-03-31 주식회사 하이닉스반도체 Circuit for testing of low VCC detection block

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0524935U (en) * 1991-09-05 1993-04-02 川崎重工業株式会社 Carburetor heating device
US5815440A (en) * 1992-12-03 1998-09-29 Fujitsu Limited Semiconductor memory device with electrically controllable threshold voltage
US6288945B1 (en) 1992-12-03 2001-09-11 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6414874B2 (en) 1992-12-03 2002-07-02 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6563738B2 (en) 1992-12-03 2003-05-13 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6611464B2 (en) * 1992-12-03 2003-08-26 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6618288B2 (en) 1992-12-03 2003-09-09 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6646920B2 (en) 1992-12-03 2003-11-11 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
KR100425217B1 (en) * 2002-01-02 2004-03-31 주식회사 하이닉스반도체 Circuit for testing of low VCC detection block

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