CN101730921B - 基板清洁腔室与其部件 - Google Patents
基板清洁腔室与其部件 Download PDFInfo
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- CN101730921B CN101730921B CN2008800179480A CN200880017948A CN101730921B CN 101730921 B CN101730921 B CN 101730921B CN 2008800179480 A CN2008800179480 A CN 2008800179480A CN 200880017948 A CN200880017948 A CN 200880017948A CN 101730921 B CN101730921 B CN 101730921B
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Images
Classifications
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32871—Means for trapping or directing unwanted particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0268—Liner tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning In General (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94095907P | 2007-05-30 | 2007-05-30 | |
US60/940,959 | 2007-05-30 | ||
US11/857,975 US7942969B2 (en) | 2007-05-30 | 2007-09-19 | Substrate cleaning chamber and components |
US11/857,975 | 2007-09-19 | ||
PCT/US2008/006702 WO2008153785A2 (en) | 2007-05-30 | 2008-05-27 | Substrate cleaning chamber and components |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101730921A CN101730921A (zh) | 2010-06-09 |
CN101730921B true CN101730921B (zh) | 2011-12-21 |
Family
ID=40086776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800179480A Active CN101730921B (zh) | 2007-05-30 | 2008-05-27 | 基板清洁腔室与其部件 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7942969B2 (ko) |
JP (4) | JP5726521B2 (ko) |
KR (2) | KR101550579B1 (ko) |
CN (1) | CN101730921B (ko) |
TW (2) | TWI474387B (ko) |
WO (1) | WO2008153785A2 (ko) |
Families Citing this family (490)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7221553B2 (en) * | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
US20060105182A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Erosion resistant textured chamber surface |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
JP4527670B2 (ja) | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20080311294A1 (en) * | 2007-06-15 | 2008-12-18 | Hideki Ito | Vapor-phase growth apparatus and vapor-phase growth method |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8216640B2 (en) * | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
CN103003926B (zh) * | 2010-06-25 | 2016-05-25 | 应用材料公司 | 具有减少的离子流的预清洁腔室 |
US20110315319A1 (en) * | 2010-06-25 | 2011-12-29 | Applied Materials, Inc. | Pre-clean chamber with reduced ion current |
US10595365B2 (en) | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
US9719169B2 (en) * | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
WO2012137408A1 (ja) * | 2011-04-04 | 2012-10-11 | キヤノンアネルバ株式会社 | 処理装置 |
DE102011007632B3 (de) * | 2011-04-18 | 2012-02-16 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) * | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10163668B2 (en) | 2011-08-30 | 2018-12-25 | Watlow Electric Manufacturing Company | Thermal dynamic response sensing systems for heaters |
US10883950B2 (en) | 2011-08-30 | 2021-01-05 | Watlow Electric Manufacturing Company | Multi-parallel sensor array system |
KR101885105B1 (ko) | 2011-09-01 | 2018-08-06 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
TWI674625B (zh) * | 2011-10-05 | 2019-10-11 | 應用材料股份有限公司 | 原位羥化裝置 |
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2011
- 2011-05-17 US US13/109,917 patent/US8980045B2/en active Active
-
2012
- 2012-11-29 JP JP2012261367A patent/JP5844722B2/ja active Active
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2015
- 2015-02-03 US US14/613,219 patent/US20150144263A1/en not_active Abandoned
- 2015-11-19 JP JP2015226713A patent/JP2016076716A/ja active Pending
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2017
- 2017-10-25 JP JP2017206061A patent/JP2018050059A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5052331A (en) * | 1989-10-18 | 1991-10-01 | The United States Of America As Represented By The United Sates Department Of Energy | Apparatus for gas-metal arc deposition |
EP1148533A2 (en) * | 2000-04-21 | 2001-10-24 | Applied Materials, Inc. | Method and apparatus for cleaning parts of a deposition system or etching wafers |
Also Published As
Publication number | Publication date |
---|---|
TWI474387B (zh) | 2015-02-21 |
US20110232845A1 (en) | 2011-09-29 |
KR20150027848A (ko) | 2015-03-12 |
JP2018050059A (ja) | 2018-03-29 |
KR20100037060A (ko) | 2010-04-08 |
US7942969B2 (en) | 2011-05-17 |
JP2016076716A (ja) | 2016-05-12 |
US8980045B2 (en) | 2015-03-17 |
TW200908109A (en) | 2009-02-16 |
JP2010528488A (ja) | 2010-08-19 |
TW201203332A (en) | 2012-01-16 |
WO2008153785A3 (en) | 2009-03-19 |
US20080295872A1 (en) | 2008-12-04 |
WO2008153785A2 (en) | 2008-12-18 |
JP5844722B2 (ja) | 2016-01-20 |
CN101730921A (zh) | 2010-06-09 |
TWI359450B (en) | 2012-03-01 |
KR101593461B1 (ko) | 2016-02-12 |
JP5726521B2 (ja) | 2015-06-03 |
US20150144263A1 (en) | 2015-05-28 |
JP2013080940A (ja) | 2013-05-02 |
KR101550579B1 (ko) | 2015-09-07 |
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Address after: American California Patentee after: Applied Materials Inc. Address before: American California Patentee before: Applied Materials Inc. |