TW201237976A - Bump-on-lead flip chip interconnection - Google Patents

Bump-on-lead flip chip interconnection Download PDF

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Publication number
TW201237976A
TW201237976A TW101111925A TW101111925A TW201237976A TW 201237976 A TW201237976 A TW 201237976A TW 101111925 A TW101111925 A TW 101111925A TW 101111925 A TW101111925 A TW 101111925A TW 201237976 A TW201237976 A TW 201237976A
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TW
Taiwan
Prior art keywords
bump
substrate
solder
bumps
die
Prior art date
Application number
TW101111925A
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English (en)
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TWI478254B (zh
Inventor
Rajendra D Pendse
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Chippac Inc
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Publication of TW201237976A publication Critical patent/TW201237976A/zh
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Publication of TWI478254B publication Critical patent/TWI478254B/zh

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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Description

201237976 六、發明說明： 【發明所屬之技術領域】 本發明有關半導體封裝，尤共有關倒裝晶片互連。 【先前技術】 倒裝晶片封裝包括黏在封裝基板上的半導體晶粒’其中 晶粒的作用側面對基板。照慣例，藉由黏在晶粒之互連焊 墊之陣列上及焊接至基板之互連焊墊（通常稱為「捕獲焊 墊」）之對應（互補）陣列的凸塊，即可形成晶粒中電路和基 板中電路的互連。 積體電路上電子特徵的面密度已大幅增加，具有較大之 電路特徵密度的晶片也具有較大之用於和封裝基板互連之 位置的密度。 此封裝係藉由封裝及底部電路之間的第二階互連（如接 針）而連接至採用此封裝之裝置中的底部電路，如印刷電 路板（如「主機板」）。第二階互連具有的間距比倒裝晶片 互連大，因此基板上的配線照慣例會「成扇形散開」◊重 大的技術發展已經可以建構精細的線路及間隔·，但在習用 的配置中，相鄰焊墊之間的間隔卻會限制接線數而非避免 陣列中更多向内的捕獲焊墊，且照慣例會在封裝基板内的 多個金屬層上，在晶粒下的捕獲焊墊及封裝的外部接針之 間形成成扇形散開的配線。對於複雜的互連陣列，可能需 要使用具有多層的基板，才能達成封裝上晶粒焊墊及第二 階互連之間的配線。 多層基板报昂貴，且在習用的倒裝晶片構想中，通常光
S 161607.doc 201237976 是基板就佔去封裝成本的—半以上（在—些典型的例子 中約佔60%)。多層基板的高成本一直是限制主流產品 倒裝晶片技術發展的因素。 在習用的倒裝晶片構想t，散逸配線圖案通常會引 外的電寄生現象，因為配線在信號傳輸路經的線路層之門 ^括短程的未屏蔽線路及通道。電寄生現象將明顯限制二 裝的效能。 【發明内容】 根據本發明’將互連凸塊直接連接至引線，而非連接至 焊墊’即可完成倒裝晶片互連。本發明可在基板上提供更 有效的接線配線。尤其，可在基板的單一金屬層中整個形 成信號配線。這可減少基板中的層數，且在單層中形成信 號接線也可以擺脫—些基板必須符合的通道、線路及間隔 設計規則。此基板簡化可大幅減少倒裝晶片封裝的總成 本。引線上凸塊架構亦有助於消除基板設計如通道及導 孔⑽…等特徵，及啟用信號傳輸微帶控制的阻抗電環 境’藉此大幅提高效能。 在一個一般方面中，本發明具有倒裝晶片互連，該互連 在晶粒上具有黏在互連烊墊上的焊料凸塊並在基板上嗔合 至對應接線上。 口 在另-個-般方面，本發明具有—倒裝晶片封裝 括：-晶粒’其在一作用表面中具有黏在互連焊墊上的焊 料凸城；及-基板’其在一晶粒黏著表面中具有導電接 線，其中該等凸塊係直接嚙合在該等接線上。 I61607.doc 201237976 -般而言，根據本發明的方法形成引線上凸塊互連，且 使^在程序中再熔化階段期間會限制熔化焊料的谭料 狀。。轉料遮罩的需求可以產生更精細的互連幾何形 在部分具體實施例中，進-步提供該基板-焊料遮罩， ^遮罩在引線的互連位置上具有開σ。在部分具體實施例 中’進-步提供該基板在互連位置之引線上的輝料膏。 在另_ -般方面，本發明具有__種用於形成倒裝晶片 互連的方法，其係藉由：提供—基板，該基板具有：在一 晶粒黏著表面令形成的接線、及在一作用表面中具有黏在 互連焊墊上之凸塊的—晶粒；固定該基板及該晶粒；塗上 大量可固化點著劑於該基板上（覆蓋至少該等接線上的連 接位置）或該晶粒之作用側上（覆蓋至少該等凸塊）；放置該 晶粒’將該晶粒的作用側朝向該基板的晶粒黏著表面，及 對準該晶粒及基板然後將其中一個移向另一個，致使該等 凸塊接觸該基板上該等對應的接線（引線）；施力以將該等 凸塊壓在該等嚙合接線上，足夠在該凸塊及該嚙合接線之 間取代該黏著劑；至少部分固化該黏著劑；熔化然後再重 新凝固該焊料，以在該凸塊及該接線之間形成一冶金互 連。 在另一個一般方面，本發明具有一種用於形成倒裝晶片 互連的方法，其係藉由：提供一基板，該基板具有：在晶 粒黏著表面中形成的接線、在該引線之互連位置上具有開 口的一焊料遮罩、及在一作用表面中具有黏在互連焊墊上 161607.doc 201237976 之凸塊的一晶粒；固定該基板及該晶粒；放置該晶粒，將 該晶粒的作用側朝向該基板的晶粒黏著表面，及對準該晶 粒及基板然後將其中一個移向另一個，致使該等凸塊接觸 該基板上該等對應的接線（引線）；熔化然後再重新凝固以 在該凸塊及該接線之間形成一冶金互連。 在部分具體實施例中，該焊料凸塊包括一可壓扁的焊料 部分，然後熔化及凝固步驟可熔化該凸塊以在該引線上形 成互連。在部分具體實施例中，進一步提供該基板在該引 線上的一焊料膏，及將該晶粒及該基板移向彼此的步驟可 在該引線上的該等凸塊及該焊料之間形成一接觸，然後熔 化及凝固步驟可熔化在該引線上的焊料以形成互連。 在另一個一般方面，本發明具有一種用於形成倒裝晶片 互連的方法，其係藉由：提供一基板，該基板具有：在一 晶粒黏著表面中形成的接線、在該引線之互連位置上具有 開口的一焊料遮罩、在該互連位置之引線上的焊料膏、及 在一作用表面中具有黏在互連焊墊上之凸塊的一晶粒；固 定該基板及該晶粒；放置該晶粒，將該晶粒的作用側朝向 該基板的晶粒黏著表面，及對準該晶粒及基板然後將其中 一個移向另一個，致使該等凸塊接觸該基板上該等對應接 線（引線）上的焊鍚膏；熔化然後再重新凝固該焊料膏以 在該凸塊及該接線之間形成一冶金互連。 【實施方式】 本發明現在將參考說明本發明替代具體實施例之圖式進 步詳細說明。圖式為概略圖，顯示本發明之特徵及與其 161607.doc 201237976 :特::結構之關係’其均未按比例繪製。為清楚說明起 ^ =說明本發明具體實施例.的圖式中，對應其 =的元❹未全部特別重新標記，不過其在 均可迅速識別。 r 習用的倒裝晶片互連係利用熔化程序形成，以將凸塊 (照慣例，焊料凸塊）結合至對應之捕獲焊墊㈣合表面 上，因此，這可稱為「捕獲焊墊上凸塊」（「B〇c」）互 連。在BOC設計中明顯有兩個特徵：第一，需要使用比較 大的捕獲焊墊以配合晶粒上的凸塊；第二，需要使用通常 '為焊料遮罩」的絕緣材料以在互連程序期間限制焊料 的流動。焊才斗遮罩開口可定義在捕獲焊塾之溶化焊料的輪 廊（「焊料遮罩定義的」），或是無法藉 由遮罩開口定義焊 料輪廓（非焊料遮罩定義的」）；後一個情況如圖！的範 例，下文將會詳述；焊料遮罩開口可明顯大於捕獲焊墊。 用於定義焊料遮罩開口的技術具有寬廣的公差範圍。因 此’對於焊料遮罩定義的凸塊組態’捕獲焊墊必須很大 (通常大於遮罩開口的設計尺寸甚多），以確保遮罩開口可 位在焊塾的嚙合表面上；及對於非焊料遮罩定義的凸塊組 態’焊料遮罩開口必須大於捕獲焊墊。捕獲焊墊的寬度 (圓形焊墊則為直徑）通常約和球（或凸塊）直徑相同，且可 以比接線寬度寬二到四倍。這會使頂部基板層損失許多配 線間隔》尤其，例如，「散逸配線間距」會大於基板技術 能夠提供的最細接線間距甚多。這表示，通常在晶粒的覆 蓋區之下’必須藉由短導孔及通道在下方基板層上配線極 161607.doc 201237976 大量的焊墊’以從所論焊墊放射。 圖1及2以截面圖顯示習用倒裝晶片封裝的部分1〇、 圖1局部的截面圖係沿著圖2直線M，絲和封裝基板表面 平行的平面；及圖2局部的截面圖係沿著^直線Μ，截取 和封裝基板表面垂直的平面。特定特徵顯示猶如透明，但 圖1中之許多特徵至少部分以覆蓋的特徵顯示成陰影。現 在參考圖1及圖2 ’封裝基板的晶粒黏著表面包括在介電層 12上形成的金屬或薄層。將金屬層圖案化可形成引線η及 捕獲焊墊14。絕緣層泣，通常又稱為「焊料遮罩」，可覆 蓋基板的晶粒黏著表面；焊料遮罩通常以光可定義的材料 構成及藉由習用的光阻圖案化技術進行圖案化，可曝露捕 獲焊墊14的喃合表面。黏在晶粒獻作用側上之焊塾的互 連凸塊15可結合至基板上對應捕獲焊墊14的嚙合表面以 在晶粒上的電路及基板上的引線之間形成適當的電互連。 在回熔的焊料冷卻以建立電連接後，會將側填滿材料辽引 入晶粒11及基板U之間的間隔，以在機械上穩定互連並保 護晶粒及基板之間的特徵。 如圖1舉例顯示，基板（引線13)上方金屬層中的信號散 逸接線，從其個別捕獲焊墊14引導橫跨晶粒邊緣位置，如 虛線11所示，並離開晶粒覆蓋區。在典型的範例中，信號 接線可具有散逸間距匕約112 um。30 um/30 um的設計規 則通常用於如圖1所示組態中的接線本身；亦即，接線標 稱為30 um寬，及其間隔相近30 un^捕獲焊墊通常大於接 線寬度二倍，因此，在此範例中，捕獲焊墊具有標稱9〇 161607.doc 201237976 um的寬度（或在此範例中，若約略主 1略為圓形，則是直徑）。還
有’在此範例中，焊料遮罩中的M 皁〒的開口大於焊墊，且具有 135 um的標稱寬度（直徑）。 圖1及2顯示非焊料遮罩定義的煜 我的焊枓輪廓。隨著晶粒上凸 塊的易熔材料熔化’熔化的焊料傾 竹1貝向於「弄濕」引線及捕 獲焊墊的金屬’及焊料傾向於「跑出权"土Α %出」任何未遮罩的連續 金屬表面上。焊料傾向於沿著連續引線13流動，及在此焊 料流動會受到焊料遮罩（如圖_19)的㈣卜㈣上非焊料 遮罩定義的焊料輪廓在圖2中清楚可見，纟“凸塊⑽ 材料顯示為在捕獲焊墊14的側面上流動的29並向下到達基 板12之介電層的表面。這稱為「非焊料遮罩定義的輪 廓」，因為焊料遮罩並不會限制焊料在表面上的流動及向 下到達捕獲焊塾的側面，除非焊塾有大量過多的焊料，否 則焊料的流動會受到以下事實的限制：基板的介電表面通 常不會被熔化的焊料弄濕。在如圖1的習用配置中，除了 其他因素之外，捕獲焊墊之密度的下限係由以下因素決 定：對遮罩形成技術之能力的限制，以製造可靠的窄遮罩 結構；及在相鄰遮罩開口之間提供遮罩結構的需求。除了 其他因素之外，散逸密度的下限另外由以下因素決定：將 位置更為集中之捕獲焊墊的散逸線路配線在位置更為週邊 之捕獲焊墊之間的需求。 圖3以和圖2相同的截面圖顯示習用之焊料遮罩定義的焊 料輪廓。所示的晶粒係藉由凸塊35附加到捕獲焊墊34的 嚙合表面上；藉由圖案化在基板22_之介電層之晶粒黏著侧 161607.doc • 10 201237976 上的金屬層，即可和接線（引線33) 一起形成捕獲焊墊Μ。 在回溶的焊料冷卻以建立電連接後，會將側填滿材料^引 入晶粒&及基板之間的間隔，以在機械上穩定互連並保 護晶粒及基板之間的特徵。此處的捕獲焊墊34比圖中 的範例寬’且焊料遮罩開口小於捕獲焊塾，因此焊料遮罩 材料可覆蓋各捕獲焊墊之嚙合表面的側面及部分（如刊所 不）及引線33 ^在使凸塊35和個別捕獲焊墊“之嚙合表面 接觸’然'後再加以熔化後’焊料鮮材料39可限制溶化之 焊料的流動，因此焊料輪廓的形狀可以藉由捕獲焊墊W上 之遮罩開口的形狀及尺寸來定義。 圖4及6各根據本發明的一項具體實施例，分別以沿著圖 5及7中直線4_4·及6-6·截|自和基板表面平行之平面的局部 截面圖’顯示倒裝晶片互連之引線上凸塊（「b〇l」的部 分）。特定特徵顯⑽如透^根據本發明，將凸塊直接 嗤合至基板上個別的窄引線或接線上，即可達到互連，因 此’這在此又稱為「引線上凸塊」（「概」）互連。焊料 遮罩材料通常在這麼精細的幾何形狀無法解決，而根據本 發明的這些具时_，並W焊㈣罩。裝絲序的過 程中不用谭料遮罩即可完成限制熔化之輝料流動的功能 s月如下）圖5顯不圖4之封裝的局部截面圖，其係沿著 4直線5_5’截取自和封裝基板表面之平面垂直的平面；及 ::顯示圖6之封裝的局部截面圖，其係沿著_直線”,截 和封裝基板表面之平面垂直的平面。 圖4及6根據本發明，舉例顯示用於引線上凸塊 J61607.doc 201237976 (BOL」）基板的散逸配線圖案··在圖4中，配置用於其上 互連球之晶粒黏著焊墊在接近晶粒周圍排成—列的晶粒， 會在接近Ba粒覆蓋區邊緣排成—列的散逸接線43上，將凸 塊45鳴合至對應的互連位置，如虛線“所示；在圖6令， 配置用於其上晶粒黏著輝塾在接近晶粒周圍為平行列之陣 列的晶粒，會在接近晶粒覆蓋區邊緣之互補陣列的散逸接 線63上，將凸塊65嚙合至對應的互連位置，如虛線61所 示0 如圖4及6顯不，利用根據本發明之引線上凸塊互連可達 到的配線密度能夠等於基板技術所提供之最精細的接線間 距。在所示的特定情況中，這可構成比習用之捕獲焊墊上 凸塊配置所達到的配線密度高約9〇%。在B〇L之周圍列具 體實施例（如圖4)中，係按照精細的間距放置凸塊，該間距 等於基板之最精細的接線間距。此配置對裝配程序將形成 挑戰’因為凸塊形成及焊接的間距必須非常精細。在B〇l 的周圍陣列形式（如圖6)中，會將凸塊配置在區域陣列上， 以對更大的凸塊形成及焊接間距提供更大的間隔，因而能 夠因應裝配程序的技術挑戰《即使在陣列具體實施例中， 基板上的配線接線和周圍列配置一樣係按照相同的有效間 距，因此圖6的配置不用犧牲精細散逸配線間距的好處， 即可因應精細間距凸塊形成及焊接的重責。 現在尤其請參考圖4及5 ’會在基板介電層£2_的晶粒黏著 表面上’藉由圖案化金層層以形成引線43。根據本發明， 將晶粒上的凸塊45直接結合至引線43上，即可形成晶粒48 I61607.doc 12 201237976 的電互連。根據本發明，並不需要使用捕獲焊墊，及在如 圖4及5的具體實施例中，也不需要使用焊料遮罩；此程序 詳細說明如下。 習用的捕獲焊墊的寬度（直徑）通常和凸塊的相同，且通 常疋接線或引線寬度的·一至四倍寬。正如所瞭解的，預期 引線的寬度會有一些變化。如本文所用，多達標稱1 20〇/〇 的接線寬度或接線設計規則寬度的接線寬度變化無法構成 捕獲焊墊，及根據本發明的引線上凸塊互連包括在引線如 此較寬部分上形成的凸塊。 同樣地’參考圖6及7，藉由在基板介電層^的晶粒黏著 表面上圖案化金屬層’即可形成引線63。信號散逸接線會 引導橫跨晶粒邊緣位置’如虛線61所示，並離開晶粒覆蓋 區。根據本發明，將晶粒上的凸塊65直接結合至引線63 上，即可形成晶粒处的電互連。從成列的互連位置引導橫 跨晶粒邊緣位置到達晶粒覆蓋區之内部的特定散逸接線， 如66，會在互連位置之較外圍列的凸塊65之間通過。根據 本發明’並不需要使用捕獲焊墊，及在如圖6及7的具體實 施例中’也不需要使用焊料遮罩；此程序詳細說明如下。 如圖4及6所示，根據本發明的引線上凸塊互連能夠提供 明顯較高的信號接線散逸配線密度。還有，如圖4及6所 示，根據本發明此方面的BOL互連並不需要使用焊料遮罩 以定義互連位置的焊料輪廓。 如圖4、5、6及7舉例所示之具體實施例的]3〇1^互連結構 可以根據本發明數個方法中任何一項來產生，並不需要使 161607.doc β η 201237976 用焊料遮罩。一般而言，互連凸塊（通常為焊料凸塊）係附 加在晶粒之作用側的互連焊墊上。基板的晶粒黏著表面 (稱為「上方」表面）具有圖案化的上方金屬層，以在特定 晶粒上視需要提供和凸塊配置互連的接線。由於不需要使 用捕獲焊墊，圖案化的接線（引線）只需要透過晶粒上和互 補於凸塊配置之圖案對應的位置來配線。在本發明的較佳 方法中，會採用封裝樹脂黏著劑以限制焊料在互連程序之 熔化階段期間的流動。 圖8及9根據本發明的另一項具體實施例，顯示引線上凸 塊之倒裝晶片互連之部分的兩個範例，其係為截取自和基 板表面平行之平面的截面圖。特定特徵顯示猶如透明。根 據本發明的此方面，會提供一焊料遮罩，其具有介於約肋 um至90 um的標稱遮罩開口直徑。在此間距可解決焊料遮 罩材料，尤其，可以比較便宜的方式製造具有含9〇 開 口及對準公差加減25 um之焊料遮罩的基板。在部分具體 實施例中，可以使用根據標準設計規則所製造的層板基板 (如4個金屬層層板）β例如，在圖8及9的具體實施例中，接 線的間距可以是〜9〇 um及互連位置的區域陣列可以是 um，以提供橫跨晶粒覆蓋區的邊緣（如虛線“所示）之有效 的散逸間距〜9 0 u m。 在如圖8及9的具體實施例中，不需要使用非流動的側填 滿，可以採用習用的毛細管側填滿。 在如圖8的具體實施例中’在基板82之晶粒黏著表面的 介電層上圖案化的窄引線或接線83上，將凸塊直接喷合在 161607.doc •14· 201237976 互連位置84上，即可達到互連；#中並沒有焊塾，及焊料 遮罩Μ可用來限制焊料在遮罩開α 88之界限内的流動以 防止焊料沿著焊料可濕性引線流動離開互連位置。此焊料 遮罩另外可限制溶化的焊料在引線之間流動，或是這可在 裝配程序的過程中完成。 在圖9的具體實施例中，如圖8，根據本發明，其中並沒 有互連焊整。在基板92的晶粒黏著表面上，會圖案化介電 層上的窄引線或接線93。焊料膏係提供於引線93上的互連 位置94,以提供用於互連的易熔媒介。焊料遮罩丛中的開 口 98可用來定義焊❹。焊料f可藉由如標準印刷程序二 上’然後回熔，然後視需要再加以禱造，以提供配合球的 均勻表面。如上述參考圖8，可在利用基板的裝配過程中 塗上谭料膏，或可在裝配之前提供具有適當圖案化之焊料 膏的基板。其他將焊料選擇性塗上互連位置的方法可用於 本發明之具體實施例的引線上焊料，包括無電電鍍及電鍵 技術。引線上焊料組態可提供額外用於互連的焊料量，因 此能提供較高的產品良率，及也能提供較高的晶粒凸出 物。 因此，在部分具體實施例中，根據本發明的引線上焊料 組I、可用於具有尚熔化溫度焊料凸塊（如高鉛焊料，照慣 例用於和陶瓷基板的互連）之晶粒和有機基板的互連。可 以選擇具有熔化溫度夠低致使有機基板在回熔期間不會損 壞的焊料膏。為了在此種具體實施例中形成互連，會將高 熔化互連凸塊和5丨線上焊料位置接觸，且再熔化可將引線 I6l607.doc 15 201237976 上焊料轉至凸塊。和引線上輝料程序—起使用不可壓扁 的凸塊時，不需要事先塗上黏著劑，因為各互連只有少量 焊料的事實可限制焊料的取代或流動，因而不可壓扁的凸 塊可防止裝配件跨掉。 在其他具體實施財，根據本發明的引線上焊料組態可 用於具有共熔焊料凸塊之晶粒的互連。 形成引線上凸塊互連之k 迓之較佳方法的一項具體實施例如圖 10A至10C所示。 參考圖式’會提供具有至少—介電層及在晶粒黏著表面 U3上具有金屬層的基板112 ’可將金屬層圖案化以提供電 路，尤其接線或引線114在晶粒黏著表面上具有用於互連 的位置。基板112係固定於載體或平台116上，其甲基板表 面對置㈣固定體的晶粒黏著纟面113。m量封裝樹 脂122塗在基板的晶粒黏著表面i丨3上，以覆蓋至少引線 114上的互連位置。會在作用側1〇3上，提供具有黏在晶粒 焊墊上（圖中未顯示）之凸塊104的晶粒1〇2。此凸塊包括可 接觸引線之嚙合表面的易熔材料。取放工具1〇8包括夾頭 106，其可將夾頭1〇6和晶粒的背面101接觸而拾取晶粒。 利用拾取工具，可將晶粒放置面對基板，其中晶粒的作用 側對著基板的晶粒黏著表面’如圖1 0A所示；及會將晶粒 與基板彼此對準移動（箭頭M)，致使凸塊104接觸基板之接 線（引線）114上的對應互連位置。然後會施力（箭頭F)，將 凸塊105壓在引線115上互連位置的嚙合表面134上，如圖 10B所示。該力必須足夠，至少可取代引線114上互連位置 16I607.doc -16 - 201237976 之凸塊及嚙合表面間的黏著劑122。凸塊會因此力而變 形，使得凸塊之接觸表面及/或引線的嚙合表面上的氧化 膜破裂。凸塊的變形會使凸塊的易熔材料壓在引線的頂部 及其邊緣上。如藉由加熱至選定的溫度，可使黏著劑固化 至少部分，如132所示。在此階段，黏著劑只需要部分固 化，亦即，只要到逹以下程度即可：實質上足以防止熔化 的焊料沿著黏著劑及導電接線之間的介面流動。然後會熔 化凸塊105的易熔材料，然後再重新凝固，以在凸塊1〇5及 引線11 5之間形成冶金互連’因而完成黏著劑固化，以完 成晶粒黏著及穩固唾合表面（現為互連介面）144的電互連， 如圖10C的140概括所示《在圖i〇c所示截面圖的平面中’ 在特定引線155上，在特定凸塊145及對應的互連位置之間 會形成互連，如圖6的組態所示《其他引線156係在其他位 置互連，該等位置可見於其他截面圖中。所示為比較高的 接線密度。黏著劑的固化可在熔化焊料之前、同時或之後 完成。通常’黏著劑為可熱固化黏著劑，及藉由調整溫 度，即可在程序中控制任何階段的固化程度。例如，藉由 升高取放工具上之夾頭的溫度或基板固定體的溫度，即可 加熱及固化成分。 此程序將在圖11A至11D中進一步詳細顯示。在圖11A 中’會在晶粒黏著表面上提供具有導電（金屬）接線214的基 板212，及會以黏著劑222覆蓋接線上的互連位置。晶粒 202的位置和基板212的關係致使晶粒的作用側面對基板的 晶粒黏著側’及其對準（箭頭A)致使晶粒上的凸塊204和接 16l607.doc 201237976 線2 14上對應的嚙合表面對準。晶粒及基板會移向彼此， 致使凸塊接觸接線上的個別嚙合表面。然後，如圖〗1β所 示’會施力以使凸塊205及接線215移向彼此，以取代圖 11Β之232所示的黏著劑，然後使凸塊在嚙合表面234及接 線的邊緣上變形。接線上凸塊的變形會使凸塊之接觸表面 及接線之嚙合表面上的氧化膜斷裂，以建立良好的電連 接，及接線邊緣上凸塊的變形有助於建立良好的暫時機械 連接。如圖10Α至10C中的範例，特定接線216的互連位置 會脫離圖11Β的平面。會加熱以部分固化黏著劑，如圖ηc 的236所示。然後會加熱以升高凸塊的溫度，以足夠使凸 塊的易熔材料熔化’如圖丨1Ε)所示。這實質上（但不一定完 全）可完成黏著劑246的固化，及在引線215的互連位置， 完成凸塊245冶金互連至嚙合表面244上。已固化的黏著劑 可穩定晶粒黏著。 在較佳方法的替代具體實施例中，彳預先將黏㈣塗在 晶粒表面上，或至少塗在晶粒表面的凸塊上，而非塗在基 板上。例如’可將黏著劑裝在貯存器+，然後將晶粒的作 用側浸入黏著劑再取出，致使凸塊上載有大量的黏著劑； 然後’利用拾取工具將晶粒放置面對固定的基板，其中晶 粒的作用側對著基板的晶粒黏著表面，錢對準晶粒及Ζ 板並使其移向彼此，致使凸塊接觸基板上對應的接線⑶ 線）。此種方法說明於2004年8月24日的美國專利第 6，·，682號’其内容在此以引用的方式併入本文中。然後 如上述執行施力、固化、及溶化。 161607.doc 201237976 根據本發明之程序的力及、、w译μ 的刀及'皿度排程如圖12舉例所示。在 此圖中，時間在水平軸上從左 々硬展’力的輪廓310係 顯不為粗線，及溫度輪廓32〇係顯 你顯不為虛線。溫度輪廓始 於介於約80。(：至約90〇C的溫度。力的鈐廒 刀的輪廓實質上始於零 力。從初始時間ti開始，力迅速（幾乎馬上）從匕升高312為 取代/變形力Fd並保持314在該力—段時間，如下文°所述‘。 Fd是大到足以取代凸塊及引線喃合表面間之黏著劑的力； 及較佳，足以使凸塊的易熔（引線接觸）部分在嚙合表面上 變形，使氧化膜斷裂及形成良好的金屬對金屬（冶金）接 觸，以及’在部分具體實施例中，足以在引線的邊緣上建 立凸塊及引線的機械連鎖（「扭曲」變形）。所需要的總力 罝取決於凸塊材料及尺寸，及取決於凸塊的數量，且不用 過度實驗即可決定。隨著力的升高，溫度也會從初始的溫 度Ti迅速升高322至凝膠溫度Tg。凝膠溫度Tg是足以部分固 化黏著劑（成為「凝膠」）的溫度。力及溫度斜面的設定較 佳致使達到Fd之後及達到\之前的滞後時間tdef很短，至少 長到足以在黏著劑的局部固化開始之前，允許升高的力取 代黏著劑及使凸塊變形。此裝配件會保持3 14、324在取代 /變形壓々Fd及凝膠溫度Tg—段時間、61，以足夠實現黏著 劑的局部固化《黏著劑應該變得夠穩固，使其在焊料重新 熔化階段期間實質上維持良好的凸塊輪廓，亦即，夠穩固 以免不必要地取代凸塊之炫化的易熔材料，或防止熔化的 易炫材料沿著引線流動。在黏著劑部分固化至足夠的程度 後，壓力會迅速下降318至實質上沒有任何力（成分的重
161607.doc 19 201237976 量）然後m度會進一步升高323至溫度l，以足夠重新溶 凸兔的易炫部分（焊料），將裳配件保持325於重新溶化的 伽'度Tm奴時間tmelt/cure，至少足以在接線上完全形成焊料 重新熔化，及較佳足以實質上(但不一定完全)固化黏著 劑然後，溫度會下降328至初始溫度Ti ,最後降至室 溫° ® 12所示㈣執行其過程的時間週期為5_ι〇秒。 如圖12之具體實施例的黏著劑可稱為「非流動側填 滿」。在-些倒裝晶片互連的方法中，會先形成冶金互 連’然後再讓側填滿材料流入晶粒及基板間的間隔。根據 本發月的非流動側填滿」可在將晶粒及基板接合一起前 塗上，及藉由引線上凸塊的方法，及藉由晶粒及基板的對 置表面，即可取代非流動側填滿。根據本發明之非流動側 填=黏著劑的黏著劑較佳為快速膠化黏著劑，㈣，在凝 夥溫度持續秒等級的時間週期膠化足夠的材料。非流 動側填滿黏著劑的較佳材料包括如所謂的「非導電焊料 膏」，如 Toshiba Chemicals* L〇ktite_Henkel所銷售的黏著 劑0 在根據本發明的引線±凸塊互連中也可以採用替代的凸 塊結構。尤其，例如，可以使用所謂#「合成焊料凸 塊」。合成蟬料凸塊具有至少兩個凸塊部分（以不同的凸塊 材料製成）’其包括在回熔條件下可壓扁的部分，及在回 T條件下實質上不可麼爲的部分。不可麼扁的部分係黏在 晶粒的互連位置上；用於不可壓扁部分的典型習用材料包 括各種具有高鉛(Pb)内容的焊料。可將可壓扁的部分和不 I61607.doc 201237976 可壓扁的部分相結合，及可壓扁的部分可形成和根據本發 明之引線的連接。合成凸塊之可壓扁部分的典型習用材料 包括如共溶焊料。 引線上凸塊互連的範例係採用如圖13之截面圖所示的合 成凸塊。現在參考圖1 3，在晶粒之作用側中晶粒焊堅上所 提供的晶粒1_0_2_具有包括不可壓扁的部分345及可壓扁的部 分347的合成凸塊。可壓扁的部分如共熔焊料或相對的低 溫熔化的焊料《可壓扁的部分可接觸引線的嚙合表面，在 此’需要引線上凸塊之易熔部分的變形，凸塊的可壓扁的 部分在施力的條件下會變形。不可壓扁的部分如具有高鉛 (Pb)内容的焊料。不可壓扁的部分在晶粒於處理期間受壓 移向基板時不會變形，且在程序的回熔階段期間不會熔 化。因此，不可壓扁的部分具有的尺寸可在晶粒之作用表 面及基板之晶粒黏著表面之間提供凸出物距離。 應明白，如圖4、5、6及7所示具體實施例的凸塊不一定 要疋完全可壓扁的凸塊。在這些圖式中顯示的結構可另外 利用合成凸塊來製造，或利用如所說明的引線上焊料方法 來製造。 其他具體實施例屬於以下申請專利範圍内。 【圖式簡單說明】 圖1為習用之捕獲焊墊上凸塊之倒裝晶片互連之部分的 不意圖，其係為和封裝基板表面平面平行的截面圖，如圖 2中的箭頭1-1，所示。 圖2為顯示習用之捕獲焊墊上凸塊之倒裝晶片互連之部 161607.doc •21 · 201237976 分的不意圖’其係為和封裝基板表面平面垂直的截面圖， 如圖1中的箭頭2-2·所示。 圖3為顯示另一個習用之捕獲焊墊上凸塊之倒裝晶片互 連之部分的示意圖’其係為和封裝基板表面平面垂直的截 面圖。 圖4為根據本發明之引線上凸塊之倒裝晶片互連之一項 具體實施例之部分的示意圖，其係為和封裝基板表面平面 平行的截面圖。 圖5為根據如圖4的本發明顯示引線上凸塊之倒裝晶片互 連之一項具體實施例之部分的示意圖，其係為和封裝基板 表面平面垂直的截面圖’如圖4中的箭頭5_5，所示。 圖6為根據本發明之引線上凸塊之倒裝晶片互連之另一 項具體實施例之部分的示意圖，其係為和封裝基板表面平 面平行的截面圖。 圖7為根據如圖6的本發明顯示引線上凸塊之倒裝晶片互 連之一項具體實施例之部分的示意圖，其係為和封裝基板 表面平面垂直的截面圖’如圖6中的箭頭7_7，所示。 圖8及9為根據本發明之引線上凸塊之倒裝晶片互連之另 一項具體實施例之各部分的示意圖，其係為和封裝基板表 面平面平行的截面圖。 圖10A至10C以截面圖顯示用於形成根據本發明之倒裝 晶片互連之程序步驟的示意圓。 圖UA至11D以截面圖顯示用於形成根據本發明之倒裝 晶片互連之程序步驟的示意圖。 16I607.doc *22- 201237976 互連之程序 明之引線上 圖12為顯示用於形成根據本發明之倒事曰 之力及溫度排程的示意圖。 圖13以截面圖顯示具有合成凸塊之根據本發 凸塊之倒裝晶片互連的示意圖。 【主要元件符號說明】 10, 20, 30 習用倒裝晶片封裝的部分 11 晶粒邊絕位置 12 介電層/基板 12. 基板 13 引線 14 捕獲焊墊 15 互連凸塊 16 絕緣層 ]_7 側填滿材料 18. 晶粒 19 焊料遮罩 29 流動的凸塊材料 32 基板 33 引線 34 捕獲焊墊 35 凸塊 31 側填滿材料 38. 晶粒 39 焊料遮罩材料 161607.doc -23- 本發明之倒裝晶片封裝的部分 互連位置 基板介電層 引線/散逸接線 凸塊 晶粒 互連位置/信號散逸接線 基板介電層 引線/散逸接線 凸塊 散逸接線 晶粒 晶粒覆蓋區邊緣 基板 引線/接線 互連位置 焊料遮罩 遮罩開口 基板 引線/接線 互連位置 焊料遮罩 開口 晶粒背面 -24 201237976 102 晶粒 103 作用側 104 凸塊 105 凸塊 106 夾頭 108 取放工具 112 基板 113 晶粒黏著表面 114 引線/接線 115 引線 116 載體或平台 122 黏著劑 132 黏著劑固化部分 134 喃合表面 140 完成的倒裝晶片互連 144 喃合表面 145 凸塊 155 引線 156 引線 202 晶粒 204 凸塊 205 凸塊 212 基板 214 導電（金屬）接線 161607.doc -25- 引線/接線 接線 黏著劑 黏著劑 嚙合表面 黏著劑固化部分 嚙合表面 凸塊 黏著劑 晶粒 力的輪廓 力的輪廓之升高 力的輪廓之保持 力的輪廓之下降 溫度輪廊 溫度輪廓之升高 溫度輪廓之升高 溫度輪廟之保持 溫度輪廊之保持 溫度輪廓之下降 不可壓扁的部分 可壓扁的部分
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Claims (1)

  1. 201237976 七 1. 、申請專利範圍： _種製造一半導體裝置的方法，其包含： 提供一半導體晶粒； 提供一具有接線之基板’該接線包含—互連位置；及 於該互連位置以及該半導體晶粒上之—凸塊焊塾之 間形成-合成互連，該合成互連具有—可熔部分以及一 不可炼部分’該可㈣分相鄰於該接線，該不可炼部分 :目鄰於該半導體晶粒上之該凸塊焊塾，其中該互連位置 ^亥合成互連下之寬度小於該接線離開該 度的1.2倍。 丈·^見 2.:請求項i之方法，其中該合成互連之該不可熔部分包 含一含鉛焊料材料。 低熔點焊料材料 3·:請求項:之方法’其中該合成互連之該可熔部分包含 4.如凊求们之方法’其中該基板包含一有機基板，里中 这合成互連之該可”分包含—焊料材料，該焊料材料 係於回焊過程中避免該有機基板受損之—溫度下溶化。 5’如清求項1之方法’其中該合成互連包含—焊料塾。 6.如項1之方法，其中該互連位置之邊緣係與該接 平行。 7. 如請求項1之方法，其中嫦石渣你 丹宁該互連位置在該合成互連下之 寬度不大於該接線離開該合成互連之寬度。 8. -種製造一半導體裝置的方法，其包含： 提供一半導體晶粒； 161607.doc 201237976 提供一具有接線之基板； 於該接線上一互連位署Ώ +. 連位置U及該+導體晶粒上之一凸 1 鬼焊：：間形成-合成凸塊材料，該接線在該互連位置 不大於4接線之—接線設計規則之12G%，該合 成凸塊材料具有-可溶部分以及-不可溶部分；及 回焊該合成凸塊材料以在該互連位置以及該 半導體晶粒上之一凸地·度執+日日/ 之間形成一合成互連，該互 連位置定義成該接線之一邱八 —A 、 條啄之 op刀，该部分直接物理接觸該 合成互連。 9. 10. 11. 12. 13. 月求項8之方法’其中該合成凸塊材料之該不可溶部 分包含一含鉛焊料材料。 如凊求項8之方法’其中該合成凸塊材料之該可熔部分 包含一低熔點焊料材料。 如。月求項8之方法’其中該基板包含—有機基板其中 該合成凸塊材料之該可熔部分包含-焊料材料，該焊料 材料係於回焊過程中避免該有機基板受損之-溫度下熔 化。 如請求項8之方法，其另包含： 形成該合成凸塊材料之該可熔部分相鄰於該接線上 該互連位置處；及 形成該合成凸塊材料之該不可熔部分相鄰於該半導 體晶粒上之一凸塊焊墊處。 一種形成具有改良之散逸繞線密度的引線上凸塊之倒裝 晶片互連的方法，其包含： 161607.doc 201237976 提供一晶粒； 提供—具有接線之封裝基板，該等接線係形成於該 封裝基板之晶粒黏合端； 將複數個合成凸塊黏著在該晶粒之一主動端的焊墊 上’每一合成凸塊包含一不可壓扁凸塊部分以及一可溶 凸塊部分’該合成凸塊貼合至該等接線上對應的互連位 置使彳于該不可壓扁凸塊部分在該焊墊與該接線之間延 伸且該可熔凸塊部分熔化以將該不可壓扁凸塊部分固接 至該互連位置’該等互連位置之平行邊緣定義一互連位 置寬度’該互連位置寬度係小於貼合至該互連位置之該 合成凸塊一寬度。 14. 如請求項13之方法，其另包含： 將該等焊塾置成一列’該列靠近該晶粒之一邊緣； 及 將相對應之該等互連位置置成一列，該列靠近晶粒 接腳之一邊緣。 15. 如請求項13之方法，其另包含： 將該等焊墊置成一陣列，該陣列靠近該晶粒之一邊 緣；及 將相對應之該等互連位置置成一陣列，該陣列靠近 晶粒接腳之一邊緣。 16_如請求項丨3之方法，其另包含於該封裝基板之該晶粒黏 合端形成一遮罩，該遮罩於該等互連位置處具有數個開 σ 〇 161607.doc 201237976 17. 如請求項13之方法，其中該不可壓扁凸塊部分包含 18. 如凊求項13之方法，其中該可熔凸塊部分包含一焊料， 該焊料係於回焊過程中避免該封裝基板受損之一溫 熔化。 m 其中該可熔凸塊部分包含一低熔點 19.如請求項13之方法 焊料。 20. —種形成一半導體裝置的方法，其包含： 提供一半導體晶粒； 於6亥半導體晶粒上提供複數個凸塊； 提供一基板；及 於該基板上形成複數個導電接線，每一接線具有· 互連位置以與該等凸塊貼合’該等互連位置之平行邊纟 的寬度係小於該凸塊之直徑之一半’彡中該等凸塊之: 者具有-不可㈣部分及—可㈣分，該不可壓扁^ 用於黏至該半導體晶粒上一接觸墊’該可熔部分 至該互連位置。 21. 22. 如請求項20之方法，其中兮艾ώ 兵〒該不可壓扁部分包含一鉛 料，該可熔部分包含低熔點焊料。 ° 如請求項20之方法，其中該可 τ唸J浴崢为係於回焊過程中 免該基板受損之一溫度下熔化。 23_如請求項20之方法，其 位置之一者的側牆接觸 24.如請求項20之方法，其 中該等凸塊之-者係與該等互連 〇 另包含在該半導體晶粒與基板之 16l607.doc 201237976 間置入一未填滿材料。 25.如請求項20之方法，其中該互連位置之寬度小於該導電 接線寬度的1.2倍。 26_ —種製造一半導體裝置的方法，其包含： 提供一半導體晶粒； 於该半導體晶粒上形成一凸塊；及 提供一具有導電接線之基板，該導電接線係形成於 該基板之一晶粒黏合表面上以與該凸塊貼合，該導電接 線具有一互連位置’該互連位置之寬度係小於該凸塊之 直徑的一半，其中該凸塊具有一不可壓扁部分及一可熔 部分’該不可壓扁部分包含用於黏至該半導體晶粒上一 接觸塾的船焊料，該可熔部分包含用於黏至該互連位置 的低熔點焊料。 27. 如凊求項26之方法’其中該可熔部分係於回焊過程中避 免該基板受損之一溫度下熔化。 28. 如請求項28之方法，其另包含在該半導體晶粒與基板之 間置入一未填滿材料。 29. —種製造一半導體裝置的方法，其包含： 提供一半導體晶粒； 於該半導體晶粒上形成一凸塊；及 提供一具有導電接線之基板，該導電接線係形成於 該基板之一晶粒黏合表面上，該導電接線具有一互連位 置以與該凸塊貼合，該互連位置之寬度係小於該凸塊之 寬度的一半，其中該凸塊具有一不可壓扁部分及一可熔 I61607.doc 201237976 刀’邊不可壓扁部分係用於黏至該半導體晶粒上一接 觸墊，該可炼部分係用於黏至該互連位置。 如睛求項29之方法’其中該可炫部分係於回焊過程中避 免該基板受損之一溫度下熔化。 3 1 ·如4求項29之方法’其中該不可壓扁部分包含紐焊料’ 且该可熔部分包含低熔點焊料。 32. 如°月求項29之方法，其中該凸塊係與該互連位置之一側 牆接觸。 33. —種製造一半導體裝置的方法，其包含： 提供一半導體晶粒； 於該半導體晶粒之一表面上形成複數個凸塊，該凸 塊包含一不可壓扁部分及一可熔部分； 提供一基板； 形成複數條$電接'線，其包含該基板之一表面上之 多個互連位置’其中該等互連位置之寬度係小於該等凸 塊之寬度的一半；及 藉由使該可熔部分在該等互連位置上形變，以將該 等凸塊之該可溶部分固接至該等互連位置之一表面，而 該等凸塊之該不可壓.扁部分在該半導體晶粒與該基板間 維持垂直支座（standoff)。 3 4.如清求項33之方法，其中該等凸塊之該不可壓扁部分包 含船焊料，以用於黏至該半導體晶粒之-接觸焊墊，且該 等凸塊之該可炼部分包含低炫點弹料，以用於黏至該等互 連位置之一表面。 161607.doc 201237976 35. 如清求項33之方法，其 在該丰導體晶粒與基板之 間置入一未填滿材料。 36. 如請求項33之方法，其 ^ 具中0亥4凸塊之一者的該可熔部分 糸、°亥等互連位置之一者的側牆接觸。 37. 一種製造-半導體裝置的方法，其包含： 提供一半導體晶粒； 於該半導體晶粒之一表面 人— 衣囬上形成一凸塊，該凸塊包 S 不可壓扁部分及一可炼部分； 提供一基板； 於該基板之-表面上形成一互連位置，丨中該互連 之寬度係小於該凸塊之寬度的一半；及 面將該凸塊之該可熔部分固接至該互連位置之一表 二:而該凸塊之該不可壓爲部分在該半導體晶粒與該基 板間維持垂直支座。 38. 如請求項 鉛焊料該凸塊之該不可壓扁部分包含 '以用於黏至該半導體晶粒之一接觸焊墊。 39. 如請求項 點焊粗 之方法，其中該凸塊之該可熔部分包含低熔 "'，以用於黏至該互連位置之該表面。 40. 如請求 、 农衣田 間置 37之方法，其另包含在該半導體晶粒與基板之 S 入〜未填滿材料。 41 ·如請求 遠付巷 之方法，其中該凸塊之該可熔部分係與該互 連位置之側牆接觸。 42. 一種制、^ 製&一半導體裝置的方法，其包含： 拷1供一半導體晶粒； 161607.doc 201237976 提供具有-互連位置之一基板，該互連位置係形成 於該基板之一表面上； 提供-凸塊’該凸塊具有一不可壓扁部分及一可熔 部分，其中該互連位置之寬度係小於該凸塊之寬度的_ 半；及 將該凸塊固接至该基板之該表面與該互連位置之一 表面之間’該凸塊之該不可壓扁部分在該半導體晶粒與 該基板間維持垂直支座。 43. 如請求項42之方法，其中該凸塊之該不可壓扁部分包含 鉛焊料，以用於黏至該半導體晶粒之一接觸焊墊。 44. 如請求項42之方法，其中該凸塊之該可熔部分包含低熔 點焊料，以用於黏至該互連位置之該表面。 45. 如請求項42之方法，其另包含在該半導體晶粒與基板之 間置入一未填滿材料。 46. 如凊求項42之方法，#中該凸塊之該可溶部分係與該互 連位置之側牆接觸。 47. —種半導體裝置，其包含： 一半導體晶粒； 複數個凸塊，其係形成於該半導體晶粒上； 一基板；及 形成於該基板上之複數條導電接線，每—接線具有 一互連位置以與該等凸塊貼合，該等互連位置之平行邊 緣之寬度係小於該等凸塊寬度之-半，其中該等凸塊之 一者具有一不可壓扁部分及一可熔部分，該不可壓扁部 161607.doc 201237976 分係用於黏至該半導體晶粒之—接觸焊墊，該可溶部份 係用於黏至該互連位置。 48.如請求項47之半導體裝置，其中該不可壓扁部分包含錯 焊料。 49.如請求項47之半導體裝置，其中該可熔部分包含低炼點 焊料。 5〇·如請求項47之半導體裝置，其中該等互連位置之寬度係 小於該導電接線之寬度的1 2倍。 51. 如請求項47之半導體裝置，其中該等凸塊之-間距係由 該基板上可達到之相鄰導電接線之最小距離來決定。 52. —種半導體裝置，其包含： 一半導體晶粒； 一具有一互連位置之基板，該互連位置係形成於該 基板之一表面上；及 一凸塊，其具有一不可壓扁部分及一可熔部分，其 中該凸塊係固接於該互連位置與該半導體晶粒之間，該 該凸塊之料可壓扁部分在料導體晶粒與該基板間維 持垂直支座，其中該互連位置之一接線的寬度係小於該 凸塊寬度之一半。 53. 如請求項52之半導體裝置，其中該凸塊之該不可壓扁部 分包含用於黏至該半導體晶粒之一接觸焊塾的錯焊料，該 凸塊之該可熔部f分包含用於黏至該互連位置之一表面之低 熔點焊料。 54. 如凊求項52之半導體裝置，其另包含在該半導體晶粒與 161607.doc 201237976 基板之間的一未填滿材料。 55.如請求項52之半導體裝置，其中該凸塊之該可熔部分係 與該互連位置之側牆接觸。 161607.doc •10-
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