RU2325008C2 - Структурированный кремниевый анод - Google Patents
Структурированный кремниевый анод Download PDFInfo
- Publication number
- RU2325008C2 RU2325008C2 RU2005116224/09A RU2005116224A RU2325008C2 RU 2325008 C2 RU2325008 C2 RU 2325008C2 RU 2005116224/09 A RU2005116224/09 A RU 2005116224/09A RU 2005116224 A RU2005116224 A RU 2005116224A RU 2325008 C2 RU2325008 C2 RU 2325008C2
- Authority
- RU
- Russia
- Prior art keywords
- silicon
- electrode according
- rods
- substrate
- lithium
- Prior art date
Links
- 229920001296 polysiloxane Polymers 0.000 title abstract 3
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 28
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000005660 hydrophilic surface Effects 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 7
- 230000001351 cycling effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000005755 formation reaction Methods 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910000855 zintl phase Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910018116 Li 21 Si 5 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000006138 lithiation reaction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910000681 Silicon-tin Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 210000003477 cochlea Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000000840 electrochemical analysis Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Secondary Cells (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0225779A GB2395059B (en) | 2002-11-05 | 2002-11-05 | Structured silicon anode |
| GB0225779.8 | 2002-11-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2005116224A RU2005116224A (ru) | 2006-01-20 |
| RU2325008C2 true RU2325008C2 (ru) | 2008-05-20 |
Family
ID=9947238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2005116224/09A RU2325008C2 (ru) | 2002-11-05 | 2003-11-05 | Структурированный кремниевый анод |
Country Status (11)
| Country | Link |
|---|---|
| US (5) | US7402829B2 (enExample) |
| EP (2) | EP2363908A1 (enExample) |
| JP (3) | JP4607594B2 (enExample) |
| KR (1) | KR100785695B1 (enExample) |
| CN (1) | CN100399606C (enExample) |
| AU (1) | AU2003276468A1 (enExample) |
| CA (1) | CA2504634C (enExample) |
| GB (1) | GB2395059B (enExample) |
| IL (1) | IL168377A (enExample) |
| RU (1) | RU2325008C2 (enExample) |
| WO (1) | WO2004042851A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2718707C1 (ru) * | 2019-01-11 | 2020-04-14 | Сергей Николаевич Максимовский | Способ создания наноструктурированного кремниевого анода |
Families Citing this family (142)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2395059B (en) | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
| JP2006516819A (ja) * | 2003-01-30 | 2006-07-06 | ユニバーシティ・オブ・ケープ・タウン | 薄膜半導体デバイスおよび薄膜半導体デバイスの製法 |
| US7501315B2 (en) * | 2004-06-08 | 2009-03-10 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| US7968273B2 (en) * | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| US8563133B2 (en) * | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
| GB0601318D0 (en) * | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
| GB0601319D0 (en) | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | A method of fabricating pillars composed of silicon-based material |
| US9166230B1 (en) | 2007-01-12 | 2015-10-20 | Enovix Corporation | Three-dimensional battery having current-reducing devices corresponding to electrodes |
| US8691450B1 (en) * | 2007-01-12 | 2014-04-08 | Enovix Corporation | Three-dimensional batteries and methods of manufacturing the same |
| CN101584065B (zh) | 2007-01-12 | 2013-07-10 | 易诺维公司 | 三维电池及其制造方法 |
| FR2913011B1 (fr) * | 2007-02-22 | 2010-03-12 | Centre Nat Rech Scient | Nouveaux materiaux comprenant des elements du groupe 14 |
| GB0709165D0 (en) * | 2007-05-11 | 2007-06-20 | Nexeon Ltd | A silicon anode for a rechargeable battery |
| AU2008301988B2 (en) * | 2007-07-12 | 2011-04-07 | Deese, Edward | Solar photovoltaic structure comprising quantized interaction sensitive nanocells |
| GB0713896D0 (en) * | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Method |
| GB0713895D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Production |
| GB0713898D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries |
| US7816031B2 (en) * | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
| US9705136B2 (en) | 2008-02-25 | 2017-07-11 | Traverse Technologies Corp. | High capacity energy storage |
| US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
| US10205166B2 (en) | 2008-02-25 | 2019-02-12 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
| US8481214B2 (en) * | 2008-02-25 | 2013-07-09 | Catalyst Power Technologies | Electrodes including support filament with collar stop |
| KR101503659B1 (ko) * | 2008-02-25 | 2015-03-17 | 로날드 앤쏘니 로제스키 | 고용량 전극 |
| US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
| US9349544B2 (en) | 2009-02-25 | 2016-05-24 | Ronald A Rojeski | Hybrid energy storage devices including support filaments |
| US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
| US9966197B2 (en) | 2009-02-25 | 2018-05-08 | Cf Traverse Llc | Energy storage devices including support filaments |
| US9917300B2 (en) | 2009-02-25 | 2018-03-13 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
| US9431181B2 (en) | 2009-02-25 | 2016-08-30 | Catalyst Power Technologies | Energy storage devices including silicon and graphite |
| US10727481B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
| US9979017B2 (en) | 2009-02-25 | 2018-05-22 | Cf Traverse Llc | Energy storage devices |
| US9941709B2 (en) | 2009-02-25 | 2018-04-10 | Cf Traverse Llc | Hybrid energy storage device charging |
| US10193142B2 (en) | 2008-02-25 | 2019-01-29 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| US9362549B2 (en) | 2011-12-21 | 2016-06-07 | Cpt Ip Holdings, Llc | Lithium-ion battery anode including core-shell heterostructure of silicon coated vertically aligned carbon nanofibers |
| US20100062338A1 (en) * | 2008-09-11 | 2010-03-11 | Lockheed Martin Corporation | Nanostructured anode for high capacity rechargeable batteries |
| GB2464157B (en) | 2008-10-10 | 2010-09-01 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material |
| GB2464158B (en) | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| US8940438B2 (en) | 2009-02-16 | 2015-01-27 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| US11996550B2 (en) | 2009-05-07 | 2024-05-28 | Amprius Technologies, Inc. | Template electrode structures for depositing active materials |
| US20100285358A1 (en) | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
| GB2470056B (en) | 2009-05-07 | 2013-09-11 | Nexeon Ltd | A method of making silicon anode material for rechargeable cells |
| US20140370380A9 (en) * | 2009-05-07 | 2014-12-18 | Yi Cui | Core-shell high capacity nanowires for battery electrodes |
| GB2470190B (en) | 2009-05-11 | 2011-07-13 | Nexeon Ltd | A binder for lithium ion rechargeable battery cells |
| US9853292B2 (en) | 2009-05-11 | 2017-12-26 | Nexeon Limited | Electrode composition for a secondary battery cell |
| HUE059099T2 (hu) | 2009-05-19 | 2022-10-28 | Oned Mat Inc | Nanoszerkezetû anyagok akkumulátoros alkalmazásokhoz |
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| RU2718707C1 (ru) * | 2019-01-11 | 2020-04-14 | Сергей Николаевич Максимовский | Способ создания наноструктурированного кремниевого анода |
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