JP2010015997A - 構造化シリコンアノード - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
Abstract
【解決手段】シリコン基板上に支持されたサブミクロンのシリコンピラーのアレー1を含むアノードであり、放電工程においてシリコンピラー上にジントル相化合物からなるフィルムが形成される。該電極は、電池を形成するように設けられたリチウムを含むカソード4、非水電解質5、とを含む電池とする。シリコンピラーは直径0.1〜1.0ミクロン、高さ1〜10ミクロンである。
【選択図】図6
Description
(Li(ads)は、ZPC上に吸着されたLi、Vは、ZPC中のLi0空孔)。
1. (a): R.A. Sharma and R.N. Seefurth, J. Electrochem. Soc., 123, 1763 (1976); (b): B.A. Boukamp, G.C. Lash and R.A. Huggins, J. Electrochem. Soc., 128, 725 (1981); (c):R.A. Huggins, Lithium Alloy Anodes in "Handbook of Battery Materials", J.O. Besenhard Ed, Wiley-VCH, Weinheim, 359(1999); (d): S. Bourderau, T. Brousse and D.M. Schleich, J. Power Sources, 233, 81 (1999); (e):O.Z. Zhuo, Bo Bao and S. Sinha, US Patent No. 6334939 B1 Jan 1, 2002:Liアノード用に種々のホスト材料を使用することに関する多くの他の特許がある。
3. J.O. Besenhard, J. Yang and M. Winter, J. Power Sources, 68, 87 (1997)
4. L.Y. Beaulieu, D. Larcher, R.A. Dunlap and J.R. Dahn, 0. Electrochem. Soc., 147, 3206 (2000)
5. J.K. Niparko (Editor), "Cochlea Implants", Pub., Lippincott Williams and Wilkins, Philadelphia, (2000)
6. C.J. Men and R.A. Huggins, J. Solid State Chem., 37, 271 (1981)
7. W.J. Weydanz, M. Wohlfahrt-Mehrens and R.A. Huggins, J. Power Sources 81-82, 237 (1999).
8. J-P. Colinge, "Silicon-on-Insulator Technology: Materials to VLSI" Kluwer Acad. Pub, Boston, Chapter 2, (1991).
9. Mino Green, M. Garcia-Parajo, F. Khaleque and: R Murray, Appl. Phys. Lett., 63, 264 (1993.)
10. Wino Green and Shin Tsuchiya, J. Vac. Sci. & Tech. B, 17, 2074 (1999)
11. Shin Tsuchiya, Wino Green and RRA Syms, Electrochem. Solid-State Lett, 3, 44 (2000)
12. L-C. Chen, M. Chen, T-H Tsaur, C Lien and C-C. Wan, Sensors and Actuators, A49, 115 (1995)
13. H. Li, X. Huang, L. Chen, G. Zhou, Z. Zhang, D. Yu, Y.J. Mo and N. Pei, Solid State Ionics, 135, 181 (2000)
14. "Properties of Silicon", Pub. INSPEC, The Institution of Electrical Engineers, London, (1988): p.461 for solubility; p.455 for diffusion data.
15. B.E. Deal and A.S. Grove, J. Appl. Phys., 36, 3770 (1965)
16. L.Y. Beaulieu, K.W. Eberman, R.L. Turner, L.J Krause and J.R. Dahn, Electrochem. Solid-State Lett., 4, A137 (2001).
Claims (14)
- シリコン基板上に支持されたサブミクロンのシリコン構造のアレーを含むアノードと、
電池を形成するように設けられた、リチウムを含むカソードと
を含む電池。 - アノードが、電池の充電/放電によって起こる体積変化によって生じる状態に耐えるように設けられている請求項1の電池。
- アノードが、電池のサイクル中に構造的一体性を維持するように設けられている請求項1の電池。
- アノードが、電池の使用中の合金化に関連する繰り返しの体積膨張に耐えるように設けられている請求項1の電池。
- サブミクロンのシリコン構造のアレーが、サブミクロンのシリコンピラーのアレーを含む請求項1の電池。
- ピラーが、基板面積の約4FH/d倍の表面積を有し、ここでFは表面フラクショナル被覆率、Hはピラーの高さ、dはピラーの直径である請求項5の電池。
- サブミクロンのピラーが、基板のフラクショナル被覆率0.5を超えない請求項5の電池。
- ピラーが、直径が0.1〜1.0ミクロンで、高さが1〜10ミクロンである請求項5の電池。
- ピラーが、直径が約0.3ミクロンで、高さが6ミクロンである請求項5の電池。
- 前記基板がn型シリコンを含む請求項1の電池。
- ウエハ貼り合せシリコンオンインシュレータ基板上に作られた請求項1の電池。
- シリコン基板上に作製されたサブミクロンのシリコンピラーのアレーを含むシリコンアノードと、リチウムカソードとを含む電池であって、放電工程においてシリコンピラー上に化合物フィルムが形成される電池。
- フィルムが、ジントル相化合物である請求項12の電池。
- 化合物フィルムが変形可能であり、充電または放電工程における体積変化の間に有意の応力誘起クラッキングを生じさせない請求項12の電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0225779A GB2395059B (en) | 2002-11-05 | 2002-11-05 | Structured silicon anode |
GB0225779.8 | 2002-11-05 |
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JP2004549349A Division JP4607594B2 (ja) | 2002-11-05 | 2003-11-05 | 構造化シリコンアノード |
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JP2010015997A true JP2010015997A (ja) | 2010-01-21 |
JP4723665B2 JP4723665B2 (ja) | 2011-07-13 |
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JP2004549349A Expired - Fee Related JP4607594B2 (ja) | 2002-11-05 | 2003-11-05 | 構造化シリコンアノード |
JP2009200060A Expired - Lifetime JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
JP2010000264A Expired - Fee Related JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
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Country Status (12)
Country | Link |
---|---|
US (5) | US7402829B2 (ja) |
EP (2) | EP2363908A1 (ja) |
JP (3) | JP4607594B2 (ja) |
KR (1) | KR100785695B1 (ja) |
CN (1) | CN100399606C (ja) |
AU (1) | AU2003276468A1 (ja) |
CA (1) | CA2504634C (ja) |
GB (1) | GB2395059B (ja) |
HK (1) | HK1086669A1 (ja) |
IL (1) | IL168377A (ja) |
RU (1) | RU2325008C2 (ja) |
WO (1) | WO2004042851A2 (ja) |
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JP2021012840A (ja) * | 2019-07-09 | 2021-02-04 | ローム株式会社 | 薄膜型全固体電池、電子機器、および薄膜型全固体電池の製造方法 |
JP2021529414A (ja) * | 2018-07-03 | 2021-10-28 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 多孔性領域を含むアノード構造を有する充電式リチウムイオン電池 |
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JP7299924B2 (ja) | 2018-07-03 | 2023-06-28 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 多孔性領域を含むアノード構造を有する充電式リチウムイオン電池 |
JP2021012840A (ja) * | 2019-07-09 | 2021-02-04 | ローム株式会社 | 薄膜型全固体電池、電子機器、および薄膜型全固体電池の製造方法 |
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