KR930018660A - 반도체 디바이스, 라이너와 금속도선 및 비아 제조방법 - Google Patents

반도체 디바이스, 라이너와 금속도선 및 비아 제조방법 Download PDF

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KR930018660A
KR930018660A KR1019930000764A KR930000764A KR930018660A KR 930018660 A KR930018660 A KR 930018660A KR 1019930000764 A KR1019930000764 A KR 1019930000764A KR 930000764 A KR930000764 A KR 930000764A KR 930018660 A KR930018660 A KR 930018660A
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alloy
melting point
high melting
metal
point metal
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KR0128264B1 (ko
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브이. 조쉬 라지브
제이. 쿠오모 제로미
엠. 다랄 호마즈다이어
엘. 슈 루이스
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죤 디. 크레인
인터내셔널 비지네스 머신즈 코포레이션
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Abstract

강성의 내마모성을 갖는 고융점 금속은 화학적-기계적 연마동안 긁히거나, 침식되거나 잘 손상되지 않아, 고융점 금속으로 저저항성 금속 도선 또는 비아를 피복하면, 효과적으로 화학적-기계적 연마 기술을 사용할수 있다. 저저항성 금속 또는 합금의 물리적 기상 침적(예를들면, 증착 또는 시준 스피터링)후에 고융점 금속의 화학기상 침적을 행하고 평탄화하면 양질의 도선과 비아를 만들수 있다. 화학기상침적법에 의해 고융점 금속을 피복하는 동안 수화규소와 불화텅스텐의 비를 변경하면 텅스텐 피복층으로 유입되는 실리콘 양을 조절할 수가 있다. 시준 스퍼터링을 행하면 CVD텅스텐 뿐만 아니라 구리계 금속피막에 대해 적절한 확산 장벽으로 되는 고융점 금속라이너(liner)를 유전체내 개구부에 만들수 있다. 이상적으로는, 구리와 같이 빠르게 확산되는 금속에 대해 두 단계의 시준 스퍼터링 공정에 의해 라이너가 제공되는데, 이 공정에서는 지향성 침적이 현저하게 되는 비교적 낮은 진공압(예를들면 1m Torr이하)에서 첫번째 층을 형성하고, 산란성 침적이 현저하게 되는 비교적 높은 진공압(예를들면 1m Torr이상)에서 두번째 층을 형성한다. CVD텅스텐과 같은 고융점 금속에 대해서는 고진공압에서 기준 스퍼터링을 하는 1단계 공정에 의해 라이터가 형성된다.

Description

반도체 디바이스, 라이너와 금속도선 및 비아 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2e도는 본 발명의 변형 실시예를 보여주는 반도체 기판의 연속적인 단면도.

Claims (33)

  1. 기판과, 상기 기판상에 위치하는 유전체 층과, 상기 유전체 층의 표면과 동평면(coplanar)을 이루는 표면으로부터 상기 기판쪽으로 연장하는 상기 유전체층 내의 개구내에 위치하는 금속 피막을 포함하며, 상기 금속피막은 저저항성 금속 또는 합금과 이를 덮어싸는 고융점 금속 또는 합금으로 이루어지며, 상기 저저항 금속 또는 합금은 상기 개구의 바닥부분을 채우고 상기 개구의 대향측면과 이격된 관계로 상기 유전체 층의 상기 표면과 동평면상의 표면쪽을 향해 확장되어 캡 영역을 규정하며, 상기 고융점 금속 또는 합금은 상기 캡 영역내에서 상기 바닥부분 위와 상기 저저항성 금속 또는 합금의 상향 연장 측부들 사이에 위치하며, 상기 고융점 금속 또는 합금은 상기 유전체 층과 동평면을 이루는 표면을 갖는 것을 특징으로 하는 반도체 디바이스.
  2. 제1항에 있어서, 상기 고융점 금속 또는 합금은 티타늄, 텅스텐, 탄탈 및 크롬과 이들의 합금, 도전성 산화물, 질화물 및 규화물로 이루어진 그룹으로부터 선택되는 것인 반도체 디바이스.
  3. 제1항에 있어서, 상기 저저항성 금속 또는 합금은 알루미늄 또는 구리의 2원 또는 3원 합금으로 된 것인 반도체 디바이스.
  4. 제3항에 있어서, 상기 저저항성 금속은 AlxCuy식을 갖는 알루미늄과 구리의 합금이며, 상기식에서 x와 y의 합은 1이고 x 및 y모두는 0이상이거나 1보다 작은 반도체 디바이스.
  5. 제1항에 있어서, 상기 고융점 금속 또는 합금은 상기 기판에 가까운 위치에서 보다는 특정 조성물로서 존재하는 상기 금속피막의 상기 표면 근처의 위치에서 실리콘 유입량이 많은 반도체 디바이스.
  6. 제1항에 있어서, 상기 금속 피막은 상기 유전체층을 완전히 통과해서 상기 기판과 접촉하는 반도체 디바이스.
  7. 제1항에 있어서, 상기 개구부내부에서 상기 유전체층과 상기 저저항성 금속 또는 합금 사이에 위치하는 고융점 금속 또는 합금의 라이너를 더 포함하는 반도체 디바이스.
  8. 기판과, 상기 유전체 층의 표면과 동평면을 이루는 표면으로부터 상기 기판쪽으로 연장하는 상기 유전체층 내의 개구내에 위치하는 금속피막을 포함하며, 상기 금속피막은 상기 개구의 내면상에 위치하는 고융점 금속 또는 합금과 상기 라이너상에 위치하며 고융점 또는 합금 캡(cap)으로 덮힌 저저항성 금속 또는 합금으로 이루어지며, 상기 라이더내의 고융점 금속 또는 합금은 상기 캡의 고융점 금속과는 다른 것을 특징으로 하는 반도체 디바이스.
  9. 제8항에 있어서, 상기 상부 캡과 상기 라이너의 고융점 금속 또는 합금은 티타늄, 텅스텐, 탄탈 및 크롬과 이들의 합금, 전도성 산화물, 질화물 및 규화물로 이루어진 그룹으로부터 선택되는 것인 반도체 디바이스.
  10. 제8항에 있어서, 상기 저저항성 금속 또는 합금은 알루미늄 또는 구리의 2원 또는 3원 합금으로 된 것인 반도체 디바이스.
  11. 제8항에 있어서, 상기 저저항성 금속은 AlxCuy식을 갖는 알루미늄과 구리의 합금이며, 상기식에서 x와 y의 합은 1이고 x 및 y모두는 0이상이거나 1보다 작은 반도체 디바이스.
  12. 제8항에 있어서, 최소한 상기 저저항성 금속 또는 합금의 적어도 일부분과 상기 고융점 금속 또는 합금 사이에 위치하는 도전성의 접착층을 더 포함하는 반도체 디바이스.
  13. 제12항에 있어서, 상기 티타늄, 텅스텐, 크롬, 탄탈 및 이들의 합금들로 이루어진 그룹으로 선택된 것인 반도체 디바이스.
  14. 제13항에 있어서, 상기 접착층은 티타늄-니트로겐 합금 또는 화합물로 된 것인 디바이스.
  15. 제8항에 있어서, 상기 고융점 금속 또는 합금은 상기 기판에 가까운 위치에서 보다는 특정 조성물로서 존재하는 상기 금속피막의 상기 표면 근처의 위치에서 실리콘 유입량이 더 많은 반도체 디바이스.
  16. 제8항에 있어서, 상기 금속피막은 상기 유전체 층을 완전히 통과해서 상기 기판과 접촉하는 반도체 디바이스.
  17. 유전체내의 높은 종횡비의 서브마이크론 단위의 호올 또는 도선에 시준기를 통해서 고융점 금속 또는 합금을 스퍼터링하되, 라이너가 상기 라이너에 차후 침적될 화학기상 침적 금속의 부착을 촉진할수 있는 두께를 갖게할 정도로 산란 침적이 현저하게 되는 압력에서 스퍼터링 하는 단계를 포함하는 것을 특징으로 하는 높은 종횡비의 서크바이크론 단위의 호올 또는 도선에 라이너를 형성하는 방법.
  18. 제17항에 있어서, 상기 호올 또는 도선의 종횡비가 2 : 1보다 크기 상기 시준기의 종횡비가 1 : 1보다 크며 상기 압력은 1m torr이상인 방법.
  19. 지향성 침적이 현저하게 되는 압력에서 유전체내의 상기 높은 종횡비의 서브마이크론 급의 상기 호올 또는 도선에 시준기를 통해서 고융점 금속 또는 합금을 스퍼터링 하여 상기 높은 종횡비의 서브마이크론 단위의 호올 또는 도선에 제1층을 형성하는 단계와, 산란 침적이 현저하게 되는 압력에서 상기 유전체내의 상기 높은 종횡비의 서브마이크론 단위의 상기 호올 또는 도선내에 있는 상기 제1층상에 시준기를 통해서 고융점 금속 또는 합금을 스퍼터링 하는 단계를 포함하는 높은 종횡비의 서브마이크론 단위의 호올 또는 도선에 라이너를 형성하는 방법.
  20. 제19항에 있어서, 1m Torr이하의 압력에서 하는 상기 제1스퍼터링 단계와 1m Torr이상의 압력에서 하는 상기 제2스퍼터링 단계에 대해 동일한 시준기를 이용하는 방법.
  21. 제19항에 있어서, 상기 제2스퍼터링 단계에서 스퍼터링되는 상기 고융점 금속은 구리 및 이것의 합금들의 확산을 방지하도록 선택한 방법.
  22. 기판상에 위치하는 유전체내에 상부와 바닥부를 가지는 개구부를 형성하는 단계와, 상기 유전체의 상부 표면과 상기 개구의 바닥부에 제1고융점 금속 또는 합금 또는 화합물을 침적하는 단계와, 저저항성 금속 또는 합금을 상기 유전체의 상기 상부표면과 상기 객구부의 바닥부에 제공된 상기 고융점 금속상에 침적하되, 상기 개구부내에서의 침적은 상기 개구부의 상기 상부 아래에 있는 위치까지 행하는 단계와, 상기 유전체의 상기 상부 표면과 상기 개구부의 상기 바닥부에 제공된 상기 고융점 금속위에 있는 저저항성 금속상에 제2고융점 금속 또는 합금을 침적하는 단계와, 상기 유전체의 상기 상부위의 모든 지점으로부터 상기 제1고융점 금속 또는 합금 또는 화합물, 상기 저저항성 금속 또는 합금 및 상기 제2고융점 금속 또는 합금을 제거하는 단계를 포함함으로써, 상기 저저항성 금속 또는 합금과 이것에 의해 피복된 상기 저저항성 금속 또는 합금을 가지며 상기 유전체와 동일 높이로 평탄화된 금속피막을 포함하는 평탄화된 구조를 제조하는 단계를 포함하는 기판위에 금속피막 도선 및 비아를 만드는 방법.
  23. 제22항에 있어서, 상기 제1고융점 금속 또는 합금 또는 화합물을 침적하는 단계는 시준 스퍼터링을 이용하며, 상기 개구부의 내부 표면과 상기 유전체의 상기 상부표면 모두에는 이에 잘 부합하는 라이너가 침적되는 방법.
  24. 제23항에 있어서, 상기 시준 스퍼터링은, 지향성 침적이 현저하게 되는 제1압력에서 상기 개구부에 상기 고융점 금속 또는 합금 또는 화합물의 제1의 얇은 층을 시준기를 통해 스퍼터링하는 단계와, 산란 침적이 현저하게 되는 제2압력에서 상기 개구부내의 상기 제1얇은층 위에 시준기를 통해 상기 고융점 금속 또는 합금 또는 화합물의 제2의 얇은층을 스퍼터링 하는 단계를 포함하는 방법.
  25. 제24항에 있어서, 상기 첫번째 스퍼터링 단계에 있어서의 상기 제1압력은 1m Torr이하로 하고 상기 두번째 스퍼터링 단계에 있어서의 상기 제2압력은 1m Torr이상으로 하는 방법.
  26. 제22항에 있어서, 물리기상침적법에 의해 상기 저저항성 금속 또는 합금을 침적하고 화학기상침적법에 의해 상기 두번째 고융점 금속 또는 합금을 침적하는 상기 단계의 방법.
  27. 제22항에 있어서, 상기 제1고융점 금속 또는 합금을 침적하는 단계는 증착법을 이용함으로써, 상기 고융점 금속이 상기 개구부의 측벽을 제외한 상기 개구부의 . 제바닥부에만 도포되게 하는 방법.
  28. 제22항에 있어서, 상기 제2의 고융점 금속을 침적하는 단계는 불화텅스텐의 수화규소 환원을 이용한 텅스텐의 화학기상침적법에 의해 수행되는 방법.
  29. 제22항에 있어서, 상기 제1고융점 금속 또는 합금을 침적하는 상기 단계 후 그리고 상기 저저항성 금속 또는 합금을 침적하는 상기 단계 전에 부착 촉진층을 침적하는 단계를 더 포함하는 방법.
  30. 제22항에 있어서, 상기 제1고융점 금속 또는 합금 또는 화합물, 상기 저저항성 금속 또는 합금 및 상기 제2고융점 금속 또는 합금을 제거하는 단계는 상기 유전체의 상부 표면위의 물질을 반응성 이온 에칭하는 단계를 포함하는 방법.
  31. 제22항에 있어서, 상기 제1고융점 금속 또는 합금 또는 화합물, 상기 저저항성 금속 또는 합금 및 상기 제2고융점 금속 또는 합금을 제거하는 단계를 상기 유전체의 상부 표면위의 물질을 화학적-기계적으로 연마하는 단계를 포함하는 방법.
  32. 제22항에 있어서, 상기 제1고융점 금속 또는 합금 또는 화합물, 상기 저저항성 금속 또는 합금 및 상기 제2고융점 금속 또는 합금을 제거하는 단계는 상기 유전체의 상부 표면위의 물질을 반응성 이온에칭 및 화학적-기계적 연마 단계 모두를 포함하는 방법.
  33. 제22항에 있어서, 상기 제1고융점 금속 또는 합금 또는 화합물 상기 저저항성 금속 또는 합금 및 상기 제2고융점 금속 또는 합금을 제거하는 단계를 과산화수소 또는 4과산화 수소에 의한 습식 에칭의 단계를 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930000764A 1992-02-26 1993-01-21 반도체 디바이스, 라이너와 금속도선 및 비아의 형성방법 KR0128264B1 (ko)

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US6802985B1 (en) 1999-08-26 2004-10-12 Sharp Kabushiki Kaisha Method for fabricating metal wirings

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SG111047A1 (en) 2005-05-30
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US5426330A (en) 1995-06-20
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CN1192050A (zh) 1998-09-02
KR0134122B1 (ko) 1998-04-20
DE69332917D1 (de) 2003-05-28
DE69329663D1 (de) 2000-12-21
EP0561132B1 (en) 2000-11-15
SG115407A1 (en) 2005-10-28
CN1120241A (zh) 1996-04-10
JPH05343532A (ja) 1993-12-24
US5585673A (en) 1996-12-17
SG70044A1 (en) 2000-01-25
SG44450A1 (en) 1997-12-19
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US5300813A (en) 1994-04-05
US5976975A (en) 1999-11-02
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CN1192049A (zh) 1998-09-02
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US5403779A (en) 1995-04-04
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US6147402A (en) 2000-11-14
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CN1192040A (zh) 1998-09-02

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